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Moiré-modulated band gap and van Hove singularities in twisted bilayer germanene
Authors:
Pantelis Bampoulis,
Carolien Castenmiller,
Dennis J. Klaassen,
Jelle v. Mil,
Paul L. de Boeij,
Motohiko Ezawa,
Harold J. W. Zandvliet
Abstract:
Twisting bilayers of two-dimensional topological insulators has the potential to create unique quantum states of matter. Here, we successfully synthesized a twisted bilayer of germanene on Ge2Pt(101) with a 21.8$^o$ degrees twist angle, corresponding to a commensurate ($\sqrt{7} \times \sqrt{7}$) structure. Using scanning tunneling microscopy and spectroscopy, we unraveled the structural and elect…
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Twisting bilayers of two-dimensional topological insulators has the potential to create unique quantum states of matter. Here, we successfully synthesized a twisted bilayer of germanene on Ge2Pt(101) with a 21.8$^o$ degrees twist angle, corresponding to a commensurate ($\sqrt{7} \times \sqrt{7}$) structure. Using scanning tunneling microscopy and spectroscopy, we unraveled the structural and electronic properties of this configuration, revealing a moiré-modulated band gap and a well-defined edge state. This band gap opens at AB/BA stacked sites and closes at AA stacked sites, a phenomenon attributed to the electric field induced by the scanning tunneling microscopy tip. Our study further revealed two van Hove singularities at -0.8 eV and +1.04 eV, resulting in a Fermi velocity of $(8 \pm 1) \times 10^5$ m/s. Our tight-binding results uncover a unique quantum state, where the topological properties could be regulated through an electric field, potentially triggering two topological phase transitions.
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Submitted 21 March, 2024;
originally announced March 2024.
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On the mystery of the absence of a spin-orbit gap in scanning tunneling microscopy spectra of germanene
Authors:
Carolien Castenmiller,
Harold J. W. Zandvliet
Abstract:
Germanene, the germanium analogue of graphene, shares many properties with its carbon counterpart. Both materials are two-dimensional materials that host Dirac fermions. There are, however, also a few important differences between these two materials: (1) graphene has a planar honeycomb lattice, whereas germanene's honeycomb lattice is buckled and (2) the spin-orbit gap in germanene is predicted t…
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Germanene, the germanium analogue of graphene, shares many properties with its carbon counterpart. Both materials are two-dimensional materials that host Dirac fermions. There are, however, also a few important differences between these two materials: (1) graphene has a planar honeycomb lattice, whereas germanene's honeycomb lattice is buckled and (2) the spin-orbit gap in germanene is predicted to be about three orders of magnitude larger than the spin-orbit gap in graphene (24 meV for germanene versus 20 $μ$eV for graphene). Surprisingly, scanning tunneling spectra recorded on germanene layers synthesized on different substrates do not show any sign of the presence of a spin-orbit gap in germanene. To date the exact origin of the absence of this spin-orbit gap in the scanning tunneling spectra of germanene has remained a mystery. In this work we show that the absence of the spin-orbit can be explained by germanene's exceptionally low work function of only 3.8 eV. The difference in work function between germanene and the scanning tunneling microscopy tip (the work functions of most commonly used STM tips are in the range of 4.5 to 5.5 eV) gives rise to an electric field in the tunnel junction. This electric field results in a strong suppression of the size of the spin-orbit gap.
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Submitted 14 February, 2022;
originally announced February 2022.
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Spectroscopic signature of surface states and bunching of bulk subbands in topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ thin films
Authors:
L. Mulder,
C. Castenmiller,
F. J. Witmans,
S. Smit,
M. S. Golden,
H. J. W. Zandvliet,
P. L. de Boeij,
A. Brinkman
Abstract:
High quality thin films of the topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ have been deposited on SrTiO$_3$ (111) by molecular beam epitaxy. Their electronic structure was investigated by in situ angle-resolved photoemission spectroscopy and in situ scanning tunneling spectroscopy. The experimental results reveal striking similarities with relativistic ab-initio tight binding calculatio…
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High quality thin films of the topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ have been deposited on SrTiO$_3$ (111) by molecular beam epitaxy. Their electronic structure was investigated by in situ angle-resolved photoemission spectroscopy and in situ scanning tunneling spectroscopy. The experimental results reveal striking similarities with relativistic ab-initio tight binding calculations. We find that ultrathin slabs of the three-dimensional topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ display topological surface states, surface states with large weight on the outermost Te atomic layer, and dispersive bulk energy levels that are quantized. We observe that the bandwidth of the bulk levels is strongly reduced. These bunched bulk states as well as the surface states give rise to strong peaks in the local density of states.
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Submitted 23 December, 2021; v1 submitted 21 December, 2021;
originally announced December 2021.
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Dual modulation STM: Simultaneous high-resolution map** of the differential conductivity and local tunnel barrier height demonstrated on Au(111)
Authors:
V. J. S. Oldenkotte,
F. J. Witmans,
M. H. Siekman,
P. L. de Boeij,
K. Sotthewes,
C. Castenmiller,
M. D. Ackermann,
J. M. Sturm,
H. J. W. Zandvliet
Abstract:
We present a scanning tunneling microscopy (STM) technique to simultaneously measure the topography, the local tunnel barrier height (dI/dz) and the differential conductivity (dI/dV). We modulate the voltage and tip piezo with small sinusoidal signals that exceed the cut-off frequency of the STM electronics and feed the tunneling current into two lock-in amplifiers (LIAs). We derive and follow a s…
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We present a scanning tunneling microscopy (STM) technique to simultaneously measure the topography, the local tunnel barrier height (dI/dz) and the differential conductivity (dI/dV). We modulate the voltage and tip piezo with small sinusoidal signals that exceed the cut-off frequency of the STM electronics and feed the tunneling current into two lock-in amplifiers (LIAs). We derive and follow a set of criteria for the modulation frequencies to avoid any interference between the LIA measurements. To validate the technique, we measure Friedel oscillations and the subtle tunnel barrier difference between the hcp and fcc stacked regions of the Au(111) herringbone reconstruction. Finally, we show that our method is also applicable to open feedback loop measurements by performing grid I(V) spectroscopy.
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Submitted 30 July, 2021;
originally announced July 2021.
