-
Resonant tunneling diodes in semiconductor microcavities: modeling polaritonic features in the THz displacement current
Authors:
Carlos F. Destefani,
Matteo Villani,
Xavier Cartoixà,
Michael Feiginov,
Xavier Oriols
Abstract:
We develop in this work a simple qualitative quantum electron transport model, in the strong light-matter coupling regime under dipole approximation, able to capture polaritonic signatures in the time-dependent electrical current. The effect of the quantized electromagnetic field in the displacement current of a resonant tunneling diode inside an optical cavity is analyzed. The original peaks of t…
▽ More
We develop in this work a simple qualitative quantum electron transport model, in the strong light-matter coupling regime under dipole approximation, able to capture polaritonic signatures in the time-dependent electrical current. The effect of the quantized electromagnetic field in the displacement current of a resonant tunneling diode inside an optical cavity is analyzed. The original peaks of the bare electron transmission coefficient split into two new peaks due to the resonant electron-photon interaction, leading to coherent Rabi oscillations among the polaritonic states that are developed in the system in the strong coupling regime. This mimics known effects predicted by a Jaynes-Cummings model in closed systems, and shows how a full quantum treatment of electrons and electromagnetic fields may open interesting paths for engineering new THz electron devices. The computational burden involved in the multi-time measurements of THz currents is tackled by invoking a Bohmian description of the light-matter interaction. We also show that the traditional static transmission coefficient used to characterize DC quantum electron devices has to be substituted by a new displacement current coefficient in high-frequency AC scenarios.
△ Less
Submitted 15 November, 2022; v1 submitted 27 April, 2022;
originally announced April 2022.
-
Hydrodynamic signatures in thermal transport in devices based on 2D materials: an ab initio study
Authors:
Martí Raya-Moreno,
Jesús Carrete,
Xavier Cartoixà
Abstract:
We investigate the features arising from hydrodynamic effects in graphene and phosphorene devices with finite heat sources, using ab initio calculations to go beyond Callaway's model and inform a full linearized scattering operator, and solving the phonon Boltzmann transport equation through energy-based deviational Monte Carlo methods. We explain the mechanisms that create those hydrodynamic feat…
▽ More
We investigate the features arising from hydrodynamic effects in graphene and phosphorene devices with finite heat sources, using ab initio calculations to go beyond Callaway's model and inform a full linearized scattering operator, and solving the phonon Boltzmann transport equation through energy-based deviational Monte Carlo methods. We explain the mechanisms that create those hydrodynamic features, showing that boundary scattering and the relation of sample dimensions to the nonlocal length are the determinant factors, regardless of the relative importance of normal versus resistive scattering. From this point of view, the nonlocal length reflects the ability of scattering to randomize the heat flux, and we show that approximations made on the scattering operator may have, through the value of nonlocal length, qualitative consequences on the signatures of hydrodynamic behavior.
△ Less
Submitted 20 July, 2022; v1 submitted 10 March, 2022;
originally announced March 2022.
-
Scattering in Terms of Bohmian Conditional Wave Functions for Scenarios with Non-Commuting Energy and Momentum Operators
Authors:
Matteo Villani,
Guillermo Albareda,
Carlos Destefani,
Xavier Cartoixà,
Xavier Oriols
Abstract:
Without access to the full quantum state, modeling quantum transport in mesoscopic systems requires dealing with a limited number of degrees of freedom. In this work, we analyze the possibility of modeling the perturbation induced by the non-simulated degrees of freedom on the simulated ones as a transition between single-particle pure states. First, we show that Bohmian conditional wave functions…
▽ More
Without access to the full quantum state, modeling quantum transport in mesoscopic systems requires dealing with a limited number of degrees of freedom. In this work, we analyze the possibility of modeling the perturbation induced by the non-simulated degrees of freedom on the simulated ones as a transition between single-particle pure states. First, we show that Bohmian conditional wave functions (BCWF) allow a rigorous discussion of the dynamics of electrons inside open quantum systems in terms of such single-particle pure states, either under Markovian or non-Markovian conditions. Second, we discuss the practical application of the method for modeling light-matter interaction phenomena in a resonant tunneling device (RTD), where a single photon is interacting with a single electron. Third, we emphasize the importance of interpreting such scattering mechanism as a transition between initial and final single-particle BCWF with well-defined energies (rather than with well-defined momenta).
△ Less
Submitted 3 February, 2022;
originally announced February 2022.
-
BTE-Barna: An extension of almaBTE for thermal simulation of devices based on 2D materials
Authors:
Martí Raya-Moreno,
Xavier Cartoixà,
Jesús Carrete
Abstract:
We present BTE-Barna (Boltzmann Transport Equation - Beyond the Rta for NAnosystems), a software package that extends the Monte Carlo (MC) module of the almaBTE solver of the Peierls-Boltzmann transport equation for phonons (PBTE) to work with nanosystems based on 2D materials with complex geometries. To properly capture how the phonon occupations evolve in momentum space as a result of scattering…
▽ More
We present BTE-Barna (Boltzmann Transport Equation - Beyond the Rta for NAnosystems), a software package that extends the Monte Carlo (MC) module of the almaBTE solver of the Peierls-Boltzmann transport equation for phonons (PBTE) to work with nanosystems based on 2D materials with complex geometries. To properly capture how the phonon occupations evolve in momentum space as a result of scattering, we have supplemented the relaxation-time approximation with an implementation of the propagator for the full linearized version of the PBTE. The code can now find solutions for finite and extended devices under the effect of a thermal gradient, with isothermal reservoirs or with an arbitrary initial temperature distribution in space and time, writing out the temperature and heat flux distributions as well as their spectral decompositions. Besides the full deviational MC solver, a number of useful approximations for highly symmetric devices are also included.
△ Less
Submitted 2 February, 2022; v1 submitted 1 February, 2022;
originally announced February 2022.
-
Phonon transport across twin boundaries and twin superlattices
Authors:
Kim López-Güell,
Nicolas Forrer,
Xavier Cartoixà,
Ilaria Zardo,
Riccardo Rurali
Abstract:
Crystal phase engineering gives access to new types of superlattices where, rather than different materials, different crystal phases of the same material are juxtaposed. Here, by means of atomistic nonequilibrium molecular dynamics calculations, we study to what extent these periodic systems can be used to alter phonon transport, similarly to what has been predicted and observed in conventional s…
▽ More
Crystal phase engineering gives access to new types of superlattices where, rather than different materials, different crystal phases of the same material are juxtaposed. Here, by means of atomistic nonequilibrium molecular dynamics calculations, we study to what extent these periodic systems can be used to alter phonon transport, similarly to what has been predicted and observed in conventional superlattices based on heterointerfaces. We focus on twin superlattices in GaAs and InAs and highlight the existence of two different transport regimes: in one each interface behaves like an independent scatterer; in the other, a segment with a sufficiently large number of closely-spaced interfaces, is seen by propagating phonons as a metamaterial with its own thermal properties.
△ Less
Submitted 13 January, 2022;
originally announced January 2022.
-
Experimental demonstration of the suppression of optical phonon splitting in 2D materials by Raman spectroscopy
Authors:
Marta De Luca,
Xavier Cartoixà,
David I. Indolese,
Javier Martín-Sánchez,
Kenji Watanabe,
Takashi Taniguchi,
Christian Schönenberger,
Rinaldo Trotta,
Riccardo Rurali,
Ilaria Zardo
Abstract:
Raman spectroscopy is one of the most extended experimental techniques to investigate thin-layered 2D materials. For a complete understanding and modeling of the Raman spectrum of a novel 2D material, it is often necessary to combine the experimental investigation to density-functional-theory calculations. We provide the experimental proof of the fundamentally different behavior of polar 2D vs 3D…
▽ More
Raman spectroscopy is one of the most extended experimental techniques to investigate thin-layered 2D materials. For a complete understanding and modeling of the Raman spectrum of a novel 2D material, it is often necessary to combine the experimental investigation to density-functional-theory calculations. We provide the experimental proof of the fundamentally different behavior of polar 2D vs 3D systems regarding the effect of the dipole-dipole interactions, which in 2D systems ultimately lead to the absence of optical phonons splitting, otherwise present in 3D materials. We demonstrate that non-analytical corrections (NACs) should not be applied to properly model the Raman spectra of few-layered 2D materials, such as WSe$_{2}$ and h-BN, corroborating recent theoretical predictions [Nano Lett. 2017, 17 (6), 3758-3763]. Our findings are supported by measurements performed on tilted samples that allow increasing the component of photon momenta in the plane of the flake, thus unambiguously setting the direction of an eventual NAC. We also investigate the influence of the parity of the number of layers and of the type of layer-by-layer stacking on the effect of NACs on the Raman spectra.
△ Less
Submitted 16 September, 2020;
originally announced September 2020.
-
Schottky barriers, emission regimes and contact resistances in 2H-1T' MoS$_2$ lateral metal-semiconductor junctions from first-principles
Authors:
M. Laura Urquiza,
Xavier Cartoixà
Abstract:
We have studied the finite bias transport properties of a 2H-1T' MoS$_2$ lateral metal-semiconductor (M-S) junction by non-equilibrium Green's functions calculations, aimed at contacting the 2D channel in a field effect transistor. Our results indicate that (a) despite the fundamentally different electrostatics of line and planar dipoles, the Schottky barrier heights respond similarly to changes i…
▽ More
We have studied the finite bias transport properties of a 2H-1T' MoS$_2$ lateral metal-semiconductor (M-S) junction by non-equilibrium Green's functions calculations, aimed at contacting the 2D channel in a field effect transistor. Our results indicate that (a) despite the fundamentally different electrostatics of line and planar dipoles, the Schottky barrier heights respond similarly to changes in do** and applied bias in 2D and 3D M-S junctions, (b) 2H-1T' MoS$_2$ lateral junctions are free from Fermi level pinning, (c) armchair interfaces have superior contacting properties vs.\ zigzag interfaces, (d) 1T' contacts to $p$ channels will present a reduced contact resistance by a factor of 4-10 with respect to $n$ channels and (e) contacts to intermediately doped $n$ ($p$) channels operate in the field (thermionic) emission regime. We also provide an improved procedure to experimentally determine the emission regime in 2D material junctions.
△ Less
Submitted 24 May, 2020;
originally announced May 2020.
-
New insights in the lattice dynamics of monolayers, bilayers, and trilayers of WSe2 and unambiguous determination of few-layer-flakes' thickness
Authors:
Marta De Luca,
Xavier Cartoixà,
Javier Martín-Sánchez,
Miquel López-Suárez,
Rinaldo Trotta,
Riccardo Rurali,
Ilaria Zardo
Abstract:
Among the most common few-layers transition metal dichalcogenides (TMDs), WSe2 is the most challenging material from the lattice dynamics point of view. Indeed, for a long time the main two phonon modes (A1g and E12g) have been wrongly assigned. In the last few years, these two modes have been properly interpreted, and their quasi-degeneracy in the monolayer has been used for its identification. I…
▽ More
Among the most common few-layers transition metal dichalcogenides (TMDs), WSe2 is the most challenging material from the lattice dynamics point of view. Indeed, for a long time the main two phonon modes (A1g and E12g) have been wrongly assigned. In the last few years, these two modes have been properly interpreted, and their quasi-degeneracy in the monolayer has been used for its identification. In this work, we show that this approach has a limited validity and we propose an alternative, more general approach, based on multi-phonon bands. Moreover, we show and interpret all the peaks (about 40) appearing in the Raman spectra of monolayers, bilayers, and trilayers of WSe2 by combining experimental wavelength- and polarization-dependent Raman studies with density-functional theory calculations providing the phonon dispersions, the polarization-resolved first-order Raman spectra, and the one- and two-phonon density of states. This complete study not only offers a method to distinguish between monolayers, bilayers, and trilayers with no need of optical images and atomic force microscopy, but it also sheds light on the interpretation of single and multi-phonon bands appearing in the inelastic light scattering experiments of layered WSe2; some of these bands were never observed before, and some were observed and uncertainly assigned. We promote the full understanding of the lattice dynamics of this material that is crucial for the realization of optoelectronics devices and of novel phononic metamaterials, such as TMDs superlattices.
△ Less
Submitted 28 October, 2019;
originally announced October 2019.
-
Thermal conductivity and phonon hydrodynamics in transition metal dichalcogenides from first-principles
Authors:
Pol Torres,
Francesc Xavier Alvarez,
Xavier Cartoixà,
Riccardo Rurali
Abstract:
We carry out a systematic study of the thermal conductivity of four single-layer transition metal dichalcogenides, MX$_2$ (M = Mo, W; X = S, Se) from first-principles by solving the Boltzmann Transport Equation (BTE). We compare three different theoretical frameworks to solve the BTE beyond the Relaxation Time Approximation (RTA), using the same set of interatomic force constants computed within d…
▽ More
We carry out a systematic study of the thermal conductivity of four single-layer transition metal dichalcogenides, MX$_2$ (M = Mo, W; X = S, Se) from first-principles by solving the Boltzmann Transport Equation (BTE). We compare three different theoretical frameworks to solve the BTE beyond the Relaxation Time Approximation (RTA), using the same set of interatomic force constants computed within density functional theory (DFT), finding that the RTA severely underpredicts the thermal conductivity of MS$_2$ materials. Calculations of the different phonon scattering relaxation times of the main collision mechanisms and their corresponding mean free paths (MFP) allow evaluating the expected hydrodynamic behaviour in the heat transport of such monolayers. These calculations indicate that despite of their low thermal conductivity, the present TMDs can exhibit large hydrodynamic effects, being comparable to those of graphene, especially for WSe$_2$ at high temperatures.
△ Less
Submitted 28 March, 2019;
originally announced March 2019.
-
Thermal conductivity for III-V and II-VI semiconductor wurtzite and zinc-blende polytypes: the role of anharmonicity and phase space
Authors:
Martí Raya-Moreno,
Riccardo Rurali,
Xavier Cartoixà
Abstract:
We calculate the lattice thermal conductivity ($κ$) for cubic (zinc-blende) and hexagonal (wurtzite) phases for 8 semiconductors using $\textit{ab initio}$ calculations and solving the Phonon Boltzmann Transport Equation, explaining the different behavior of the ratio $κ_{\rm hex}/κ_{\rm cub}$ between the two phases. We show that this behavior depends on the relative importance of two antagonistic…
▽ More
We calculate the lattice thermal conductivity ($κ$) for cubic (zinc-blende) and hexagonal (wurtzite) phases for 8 semiconductors using $\textit{ab initio}$ calculations and solving the Phonon Boltzmann Transport Equation, explaining the different behavior of the ratio $κ_{\rm hex}/κ_{\rm cub}$ between the two phases. We show that this behavior depends on the relative importance of two antagonistic factors: anharmonicity, which we find to be always higher in the cubic phase; and the accessible phase space, which is higher for the less symmetric hexagonal phase. Based on that, we develop a method that predicts the most conducting phase---cubic or hexagonal---where other more heuristic approaches fail. We also present results for nanowires made of the same materials, showing the possibility to tune $κ_{\rm hex}/κ_{\rm cub}$ over a wide range by modifying their diameter, thus making them attractive materials for complex phononic and thermoelectric applications/systems.
△ Less
Submitted 5 September, 2019; v1 submitted 10 January, 2019;
originally announced January 2019.
-
Electrical Contact Resistance in Graphite-Graphene contacts from ab initio methods
Authors:
Ferran Jovell,
Xavier Cartoixà
Abstract:
We study the ballistic transmission and the contact resistance ($R_c$) of a graphite-graphene contact in a top contact geometry from first principles. We find that the calculated $R_c$'s depend on the amount of graphene-graphite overlap, but quickly saturate for transfer lengths of the order of 20 Å. For contacts overlap** more than this transfer length, the $R_c$ can be lower than the 100 Ω…
▽ More
We study the ballistic transmission and the contact resistance ($R_c$) of a graphite-graphene contact in a top contact geometry from first principles. We find that the calculated $R_c$'s depend on the amount of graphene-graphite overlap, but quickly saturate for transfer lengths of the order of 20 Å. For contacts overlap** more than this transfer length, the $R_c$ can be lower than the 100 Ω$\cdot$μm mark. On the other hand, edge graphite-graphene contacts are expected to have very low contact resistance.
△ Less
Submitted 19 October, 2018;
originally announced October 2018.
-
Short channel effects in graphene-based field effect transistors targeting radio-frequency applications
Authors:
Pedro C. Feijoo,
David Jiménez,
Xavier Cartoixà
Abstract:
Channel length scaling in graphene field effect transistors (GFETs) is key in the pursuit of higher performance in radio frequency electronics for both rigid and flexible substrates. Although two-dimensional (2D) materials provide a superior immunity to Short Channel Effects (SCEs) than bulk materials, they could dominate in scaled GFETs. In this work, we have developed a model that calculates ele…
▽ More
Channel length scaling in graphene field effect transistors (GFETs) is key in the pursuit of higher performance in radio frequency electronics for both rigid and flexible substrates. Although two-dimensional (2D) materials provide a superior immunity to Short Channel Effects (SCEs) than bulk materials, they could dominate in scaled GFETs. In this work, we have developed a model that calculates electron and hole transport along the graphene channel in a drift-diffusion basis, while considering the 2D electrostatics. Our model obtains the self-consistent solution of the 2D Poisson's equation coupled to the current continuity equation, the latter embedding an appropriate model for drift velocity saturation. We have studied the role played by the electrostatics and the velocity saturation in GFETs with short channel lengths L. Severe scaling results in a high degradation of GFET output conductance. The extrinsic cutoff frequency follows a 1/L^n scaling trend, where the index n fulfills n < 2. The case n = 2 corresponds to long-channel GFETs with low source/drain series resistance, that is, devices where the channel resistance is controlling the drain current. For high series resistance, n decreases down to n= 1, and it degrades to values of n < 1 because of the SCEs, especially at high drain bias. The model predicts high maximum oscillation frequencies above 1 THz for channel lengths below 100 nm, but, in order to obtain these frequencies, it is very important to minimize the gate series resistance. The model shows very good agreement with experimental current voltage curves obtained from short channel GFETs and also reproduces negative differential resistance, which is due to a reduction of diffusion current.
△ Less
Submitted 23 June, 2016; v1 submitted 10 June, 2016;
originally announced June 2016.
-
First principles Kinetic-Collective thermal conductivity of semiconductors
Authors:
P. Torres,
A. Torello,
J. Bafaluy,
J. Camacho,
X. Cartoixà,
F. X. Alvarez
Abstract:
A fully predictive Kinetic Collective Model using first principles phonon spectra and relaxation times is presented. Thermal conductivity values obtained for Si, Ge, C (diamond) and GaAs in a wide range of sizes and temperatures have good agreement with experimental data without the use of any fitting parameter. This validation of the model open the door to discuss how the precise combination of k…
▽ More
A fully predictive Kinetic Collective Model using first principles phonon spectra and relaxation times is presented. Thermal conductivity values obtained for Si, Ge, C (diamond) and GaAs in a wide range of sizes and temperatures have good agreement with experimental data without the use of any fitting parameter. This validation of the model open the door to discuss how the precise combination of kinetic and collective contributions to heat transport could provide a useful framework to interpret recent complex experiments displaying non-Fourier behavior.
△ Less
Submitted 23 September, 2016; v1 submitted 3 June, 2016;
originally announced June 2016.
-
Thermal conductivity of bulk and nanoscaled Si/Ge alloys from the Kinetic Collective Model
Authors:
P. Torres,
C. de Tomas,
A. Lopeandia,
X. Cartoixà,
X. Alvarez
Abstract:
Several hitherto unexplained features of thermal conductivity in group IV materials, such as the change in the slope as a function of sample size for pure vs. alloyed samples and the fast decay in thermal conductivity for low impurity concentration, are described in terms of a transition from a collective to kinetic regime in phonon transport. We show that thermal transport in pure bulk silicon sa…
▽ More
Several hitherto unexplained features of thermal conductivity in group IV materials, such as the change in the slope as a function of sample size for pure vs. alloyed samples and the fast decay in thermal conductivity for low impurity concentration, are described in terms of a transition from a collective to kinetic regime in phonon transport. We show that thermal transport in pure bulk silicon samples is mainly collective, and that impurity/alloy and boundary scattering are responsible for the destruction of this regime with an associated strong reduction in thermal conductivity, leaving kinetic transport as the only one allowed when those resistive scattering mechanisms are dominant.
△ Less
Submitted 3 September, 2015; v1 submitted 4 June, 2015;
originally announced June 2015.
-
Towards the explicit computation of Bohm velocities associated to N-electron wave-functions with arbitrary spin-orientations
Authors:
A. Alarcon,
X. Cartoixa,
X. Oriols
Abstract:
The direct solution of the many-particle Schrödinger equation is computationally inaccessible for more than very few electrons. In order to surpass this limitation, one of the authors [X. Oriols, Phys. Rev. Lett. 2007, 98 (066803)] has recently proposed a new model to study electron-electron correlations from Bohm trajectories associated to time-dependent wave-packets solutions of pseudo single-pa…
▽ More
The direct solution of the many-particle Schrödinger equation is computationally inaccessible for more than very few electrons. In order to surpass this limitation, one of the authors [X. Oriols, Phys. Rev. Lett. 2007, 98 (066803)] has recently proposed a new model to study electron-electron correlations from Bohm trajectories associated to time-dependent wave-packets solutions of pseudo single-particle Schrödinger equations. In the aforementioned paper only the orbital exchange interaction is considered assuming that all electrons have the same spin orientation. Then, the many-particle wave function is a complex Slater determinant of the single-particle wave-packets. In the present work the previous formalism is extended to study many-particle wave functions where the electrons have different spin orientations.The main difficulty to treat N different electron spin orientations with time-dependent wave-packets is that one must study all the possible N!N! products of permutations among spin states. To overcome this computationally inaccessible problem, in this article the total wave function is treated as a separated product of two many-particle wave functions, the first with spin up and the second with spin down. In order to numerically justify this approximation, the Bohm velocity in different antisymmetric total wave-function scenarios is computed. The computational results confirms the accurate validity of our approximation under a large number of cases.
△ Less
Submitted 19 August, 2014;
originally announced August 2014.
-
Computation of many-particle quantum trajectories with exchange interaction: Application to the simulation of nanoelectronic devices
Authors:
A. Alarcón,
S. Yaro,
X. Cartoixà,
X. Oriols
Abstract:
Following Ref. [Oriols X 2007 Phys. Rev. Lett., 98 066803], an algorithm to deal with the exchange interaction in non-separable quantum systems is presented. The algorithm can be applied to fermions or bosons and, by construction, it exactly ensures that any observable is totally independent from the interchange of particles. It is based on the use of conditional Bohmian wave functions which are s…
▽ More
Following Ref. [Oriols X 2007 Phys. Rev. Lett., 98 066803], an algorithm to deal with the exchange interaction in non-separable quantum systems is presented. The algorithm can be applied to fermions or bosons and, by construction, it exactly ensures that any observable is totally independent from the interchange of particles. It is based on the use of conditional Bohmian wave functions which are solutions of single-particle pseudo-Schrödinger equations. The exchange symmetry is directly defined by demanding symmetry properties of the quantum trajectories in the configuration space with a universal algorithm, rather than through a particular exchange-correlation functional introduced into the single-particle pseudo-Schrödinger equation. It requires the computation of N^2 conditional wave functions to deal with N identical particles. For separable Hamiltonians, the algorithm reduces to the standard Slater determinant for fermions, or permanent for bosons. A numerical test for a two-particle system, where exact solutions for non-separable Hamiltonians are computationally accessible, is presented. The numerical viability of the algorithm for quantum electron transport (in a far-from equilibrium time-dependent open system) is demonstrated by computing the current and fluctuations in a nano-resistor, with exchange and Coulomb interactions among electrons.
△ Less
Submitted 2 August, 2014;
originally announced August 2014.
-
PtSi Clustering In Silicon Probed by Transport Spectroscopy
Authors:
Massimo Mongillo,
Panayotis Spathis,
Georgios Katsaros,
Riccardo Rurali,
Xavier Cartoixa,
Pascal Gentile,
Silvano de Franceschi
Abstract:
Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is reduced below a few tens of nanometers. Here we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky barrier transistors. This phen…
▽ More
Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is reduced below a few tens of nanometers. Here we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states.
△ Less
Submitted 21 July, 2014;
originally announced July 2014.
-
Correlation-mediated processes for electron-induced switching between Neel states of Fe anti-ferromagnetic chains
Authors:
Jean-Pierre Gauyacq,
Simeon Moises Yaro,
Xavier Cartoixa,
Nicolas Lorente
Abstract:
The controlled switching between two quasi-stable Neel states in adsorbed anti-ferromagnetic Fe chains has recently been achieved by Loth et al [Science 335, 196 (2012)]. In order to rationalize their data, we evaluate the rate of tunneling electron-induced switching between the Néel states. Good agreement is found with the experiment permitting us to identify three switching mechanisms: (i) low-b…
▽ More
The controlled switching between two quasi-stable Neel states in adsorbed anti-ferromagnetic Fe chains has recently been achieved by Loth et al [Science 335, 196 (2012)]. In order to rationalize their data, we evaluate the rate of tunneling electron-induced switching between the Néel states. Good agreement is found with the experiment permitting us to identify three switching mechanisms: (i) low-bias direct electron-induced transitions, (ii) intermediate-bias switching via spin-wave-like excitation, and (iii) high-bias transitions mediated by domain wall formation. Spin correlations in the anti-ferromagnetic chains are the switching driving force leading to a marked chain-size dependence.
△ Less
Submitted 7 November, 2012;
originally announced November 2012.
-
Theory of defects in one-dimensional systems: the case of Al in Si nanowires
Authors:
Riccardo Rurali,
Xavier Cartoixa
Abstract:
The energetic cost of creating a defect within a host material is given by the formation energy. Here we present a formulation allowing the calculation of formation energies in one-dimensional nanostructures, which overcomes the difficulties involved in defining the chemical potential of the constituent species and the possible passivation of the surface. We also develop a formula for the Madelu…
▽ More
The energetic cost of creating a defect within a host material is given by the formation energy. Here we present a formulation allowing the calculation of formation energies in one-dimensional nanostructures, which overcomes the difficulties involved in defining the chemical potential of the constituent species and the possible passivation of the surface. We also develop a formula for the Madelung correction for general dielectric tensors and computational cell shapes. We apply this formalism to the formation energies of charged Al impurities in silicon nanowires, obtaining concentrations significantly larger than in their bulk counterparts.
△ Less
Submitted 11 June, 2008;
originally announced June 2008.
-
Disorder Enhanced Spin Polarization in Diluted Magnetic Semiconductors
Authors:
Byounghak Lee,
Xavier Cartoixa,
Nandini Trivedi,
Richard M. Martin
Abstract:
We present a theoretical study of diluted magnetic semiconductors that includes spin-orbit coupling within a realistic host band structure and treats explicitly the effects of disorder due to randomly substituted Mn ions. While spin-orbit coupling reduces the spin polarization by mixing different spin states in the valence bands, we find that disorder from Mn ions enhances the spin polarization…
▽ More
We present a theoretical study of diluted magnetic semiconductors that includes spin-orbit coupling within a realistic host band structure and treats explicitly the effects of disorder due to randomly substituted Mn ions. While spin-orbit coupling reduces the spin polarization by mixing different spin states in the valence bands, we find that disorder from Mn ions enhances the spin polarization due to formation of ferromagnetic impurity clusters and impurity bound states. The disorder leads to large effects on the hole carriers which form impurity bands as well as hybridizing with the valence band. For Mn do** 0.01 < x < 0.04, the system is metallic with a large effective mass and low mobility.
△ Less
Submitted 24 February, 2007;
originally announced February 2007.
-
A simple drain current model for Schottky-barrier carbon nanotube field effect transistors
Authors:
D. Jimenez,
X. Cartoixa,
E. Miranda,
J. Sune,
F. A. Chaves,
S. Roche
Abstract:
We report on a new computational model to efficiently simulate carbon nanotubebased field effect transistors (CNT-FET). In the model, a central region is formed by a semiconducting nanotube that acts as the conducting channel, surrounded by a thin oxide layer and a metal gate electrode. At both ends of the semiconducting channel, two semi-infinite metallic reservoirs act as source and drain cont…
▽ More
We report on a new computational model to efficiently simulate carbon nanotubebased field effect transistors (CNT-FET). In the model, a central region is formed by a semiconducting nanotube that acts as the conducting channel, surrounded by a thin oxide layer and a metal gate electrode. At both ends of the semiconducting channel, two semi-infinite metallic reservoirs act as source and drain contacts. The current-voltage characteristics are computed using the Landauer formalism, including the effect of the Schottky barrier physics. The main operational regimes of the CNT-FET are described, including thermionic and tunnel current components, capturing ambipolar conduction, multichannel ballistic transport and electrostatics dominated by the nanotube capacitance. The calculations are successfully compared to results given by more sophisticated methods based on non-equilibrium Green's function formalism (NEGF).
△ Less
Submitted 31 October, 2006;
originally announced October 2006.
-
Higher order contributions to Rashba and Dresselhaus effects
Authors:
X. Cartoixa,
L. -W. Wang,
D. Z. -Y. Ting,
Y. -C. Chang
Abstract:
We have developed a method to systematically compute the form of Rashba- and Dresselhaus-like contributions to the spin Hamiltonian of heterostructures to an arbitrary order in the wavevector k. This is achieved by using the double group representations to construct general symmetry-allowed Hamiltonians with full spin-orbit effects within the tight-binding formalism. We have computed full-zone s…
▽ More
We have developed a method to systematically compute the form of Rashba- and Dresselhaus-like contributions to the spin Hamiltonian of heterostructures to an arbitrary order in the wavevector k. This is achieved by using the double group representations to construct general symmetry-allowed Hamiltonians with full spin-orbit effects within the tight-binding formalism. We have computed full-zone spin Hamiltonians for [001]-, [110]- and [111]-grown zinc blende heterostructures (D_{2d},C_{4v},C_{2v},C_{3v} point group symmetries), which are commonly used in spintronics. After an expansion of the Hamiltonian up to third order in k, we are able to obtain additional terms not found previously. The present method also provides the matrix elements for bulk zinc blendes (T_d) in the anion/cation and effective bond orbital model (EBOM) basis sets with full spin-orbit effects.
△ Less
Submitted 22 November, 2005;
originally announced November 2005.
-
Spin-Orbit Effects in Diluted Magnetic Semiconductors
Authors:
Byounghak Lee,
Xavier Cartoixa,
Nandini Trivedi,
Richard M. Martin
Abstract:
We present a theoretical study of diluted magnetic semiconductors that treats the local sp-d exchange interaction J between the itinerant carriers and the Mn d electrons within a realistic band structure and goes beyond previous mean-field approaches. In case of (Ga,Mn)As, we find that strong exchange potentials tightly bind carriers near impurity sites. Spin-orbit coupling is found to have a mo…
▽ More
We present a theoretical study of diluted magnetic semiconductors that treats the local sp-d exchange interaction J between the itinerant carriers and the Mn d electrons within a realistic band structure and goes beyond previous mean-field approaches. In case of (Ga,Mn)As, we find that strong exchange potentials tightly bind carriers near impurity sites. Spin-orbit coupling is found to have a more pronounced effect on spin polarization at weak coupling and this feature can be exploited for magnetotransport. For low do** regime, we predict that spin-orbit coupling splits impurity bands and can induce a novel insulating phase.
△ Less
Submitted 3 October, 2004;
originally announced October 2004.
-
Suppression of the D'yakonov-Perel' spin relaxation mechanism for all spin components in [111] zincblende quantum wells
Authors:
X. Cartoixa,
D. Z. -Y. Ting,
Y. -C. Chang
Abstract:
We apply the D'yakonov-Perel' (DP) formalism to [111]-grown zincblende quantum wells (QWs) to compute the spin lifetimes of electrons in the two-dimensional electron gas. We account for both bulk and structural inversion asymmetry (Rashba) effects. We see that, under certain conditions, the spin splitting vanishes to first order in k, which effectively suppresses the DP spin relaxation mechanism…
▽ More
We apply the D'yakonov-Perel' (DP) formalism to [111]-grown zincblende quantum wells (QWs) to compute the spin lifetimes of electrons in the two-dimensional electron gas. We account for both bulk and structural inversion asymmetry (Rashba) effects. We see that, under certain conditions, the spin splitting vanishes to first order in k, which effectively suppresses the DP spin relaxation mechanism for all spin components. We predict extended spin lifetimes as a result, giving rise to the possibility of enhanced spin storage. We also study [110]-grown QWs, where the effect of structural inversion asymmetry is to augment the spin relaxation rate of the component perpendicular to the well. We derive analytical expressions for the spin lifetime tensor and its proper axes, and see that they are dependent on the relative magnitude of the BIA- and SIA-induced splittings.
△ Less
Submitted 15 July, 2004; v1 submitted 9 February, 2004;
originally announced February 2004.
-
Bulk Inversion Asymmetry effects on the band structure of zincblende heterostructures in an 8-band Effective Mass Approximation model
Authors:
X. Cartoixa,
D. Z. -Y. Ting,
T. C. McGill
Abstract:
We have developed an 8-band Effective Mass Approximation model that describes the zero field spin splitting in the band structure of zincblende heterostructures due to bulk inversion asymmetry (BIA). We have verified that our finite difference Hamiltonian transforms in almost all situations according to the true $D_{2d}$ or $C_{2v}$ symmetry of [001] heterostructures. This makes it a computation…
▽ More
We have developed an 8-band Effective Mass Approximation model that describes the zero field spin splitting in the band structure of zincblende heterostructures due to bulk inversion asymmetry (BIA). We have verified that our finite difference Hamiltonian transforms in almost all situations according to the true $D_{2d}$ or $C_{2v}$ symmetry of [001] heterostructures. This makes it a computationally efficient tool for the accurate description of the band structure of heterostructures for spintronics. We first compute the band structure for an AlSb/GaSb/AlSb quantum well (QW), which presents only BIA, and delineate its effects. We then use our model to find the band structure of an AlSb/InAs/GaSb/AlSb QW and the relative contribution of structural and bulk inversion asymmetry to the spin splitting. We clarify statements about the importance of these contributions and conclude that, even for our small gap QW, BIA needs to be taken into account for the proper description of the band structure.
△ Less
Submitted 17 December, 2002;
originally announced December 2002.
-
Spin Injection from Ferromagnetic Metals into Gallium Nitride
Authors:
C. J. Hill,
X. Cartoixa,
R. A. Beach,
D. L. Smith,
T. C. McGill
Abstract:
The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular polarization of the emitted light is observed, which changes sign on reversal of the magnetization of the tip. The polarization is found to be in qualitative ag…
▽ More
The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular polarization of the emitted light is observed, which changes sign on reversal of the magnetization of the tip. The polarization is found to be in qualitative agreement with that expected from considerations based on the splitting of the valence bands due to spin-orbit coupling and the crystal field splitting corresponding to the wurtzite structure, and the magnitude of the spin polarization from the ferromagnetic metal. We find a lower bound for the spin injection efficiency of 25%, corresponding to a net spin polarization in the semiconductor of 10%. This is the largest reported value for a room temperature measurement of spin injection into semiconductors in air.
△ Less
Submitted 4 October, 2000;
originally announced October 2000.
