Showing 1–50 of 52 results for author: Cartiglia, N

First test beam measurement of the 4D resolution of an RSD 450 microns pitch pixel matrix connected to a FAST2 ASIC

Authors: L. Menzio, F. Siviero, R. Arcidiacono, N. Cartiglia, M. Costa, T. Croci, M. Ferrero, C. Hanna, L. Lanteri, S. Mazza, R. Mulargiaa, H-F W. Sadrozinski, A. Seiden, V. Sola, R. Whitea, M. Wilder

Abstract: This paper reports on the spatial and temporal resolutions of an RSD 450 microns pitch pixels array measured at the DESY test beam facility. RSDs, Resistive Silicon Detectors, also known as AC-LGAD, achieve excellent position and temporal resolution by exploiting charge sharing among neighboring electrodes. The RSD matrix used in this study is part of the second FBK RSD production, RSD2, and it is… ▽ More This paper reports on the spatial and temporal resolutions of an RSD 450 microns pitch pixels array measured at the DESY test beam facility. RSDs, Resistive Silicon Detectors, also known as AC-LGAD, achieve excellent position and temporal resolution by exploiting charge sharing among neighboring electrodes. The RSD matrix used in this study is part of the second FBK RSD production, RSD2, and it is composed of 450 microns pitch pixel with cross-shaped electrodes. A 7-pixel matrix was read out by the FAST2 ASIC, a 16-channel amplifier fully custom ASIC developed by INFN Torino using the 110 nm CMOS technology. The total area covered by the matrix is about 1.5 mm$^2$. The position resolution reached in this test is 15 microns, about 4\% of the pitch. The temporal resolution achieved in this work is 60 ps, dominated by the FAST2 resolution. The work also demonstrates that RSD sensors with cross-shaped electrodes achieve 100% fill factor and homogenous resolutions over the whole matrix surface, making them a suitable choice for 4D tracking applications. △ Less

Submitted 17 February, 2024; v1 submitted 2 February, 2024; originally announced February 2024.

Comments: 33 pages, 21 figures

First observation and study of the $K^{\pm} \rightarrow π^{0} π^{0} μ^{\pm} ν$ decay

Authors: NA48/2 Collaboration, :, J. R. Batley, G. Kalmus, C. Lazzeroni, D. J. Munday, M. W. Slater, S. A. Wotton, R. Arcidiacono, A. Ceccucci, G. Bocquet, N. Cabibbo, D. Cundy, V. Falaleev, L. Gatignon, M. Fidecaro, A. Gonidec, W. Kubischta, A. Maier, A. Norton, M. Patel, A. Peters, S. Balev, P. L. Frabetti, E. Gersabeck , et al. (100 additional authors not shown)

Abstract: The NA48/2 experiment at CERN reports the first observation of the $K^{\pm} \rightarrow π^{0} π^{0} μ^{\pm} ν$ decay based on a sample of 2437 candidates with 15% background contamination collected in 2003--2004. The decay branching ratio in the kinematic region of the squared dilepton mass above $0.03$~GeV$^2/c^4$ is measured to be $(0.65 \pm 0.03) \times 10^{-6}$. The extrapolation to the full k… ▽ More The NA48/2 experiment at CERN reports the first observation of the $K^{\pm} \rightarrow π^{0} π^{0} μ^{\pm} ν$ decay based on a sample of 2437 candidates with 15% background contamination collected in 2003--2004. The decay branching ratio in the kinematic region of the squared dilepton mass above $0.03$~GeV$^2/c^4$ is measured to be $(0.65 \pm 0.03) \times 10^{-6}$. The extrapolation to the full kinematic space, using a specific model, is found to be $(3.45 \pm 0.16) \times 10^{-6}$, in agreement with chiral perturbation theory predictions. △ Less

Submitted 25 March, 2024; v1 submitted 31 October, 2023; originally announced October 2023.

Comments: 16 pages, 9 figures

Journal ref: JHEP 03(2024)137

A new Low Gain Avalanche Diode concept: the double-LGAD

Authors: F. Carnesecchi, S. Strazzi, A. Alici, R. Arcidiacono, N. Cartiglia, D. Cavazza, S. Durando, M. Ferrero, A. Margotti, L. Menzio, R. Nania, B. Sabiu, G. Scioli, F. Siviero, V. Sola, G. Vignola

Abstract: This paper describes the new concept of the double-LGAD. The goal is to increase the charge at the input of the electronics, kee** a time resolution equal or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25… ▽ More This paper describes the new concept of the double-LGAD. The goal is to increase the charge at the input of the electronics, kee** a time resolution equal or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25 \textmu{m}, 35 \textmu{m} and 50 \textmu{m}. △ Less

Submitted 26 July, 2023; originally announced July 2023.

Comments: arXiv admin note: text overlap with arXiv:2208.05717

Resistive Read-out in Thin Silicon Sensors with Internal Gain

Authors: N. Cartiglia, F. Moscatelli, R. Arcidiacono, P. Asenov, M. Costa, T. Croci, M. Ferrero, A. Fondacci, L. Lanteri, L. Menzio, A. Morozzi, R. Mulargia, D. Passeri, F. Siviero, V. Sola, M. Tornago

Abstract: Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain mechanism, lead to improved temporal precision, while charge sharing, introduced by resistive read-out, allows for achieving excellent spatial resolution even with l… ▽ More Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain mechanism, lead to improved temporal precision, while charge sharing, introduced by resistive read-out, allows for achieving excellent spatial resolution even with large pixels. LGAD- and RSD- based silicon sensors are now adopted, or considered, in several future experiments and are the basis for almost every next 4D-trackers. New results obtained with sensors belonging to the second FBK production of RSD (RSD2) demonstrate how a combined resolution of 30 ps and 30 \microns can be obtained with pixels as large as $1 \times 1 $ mm$^2$. △ Less

Submitted 7 January, 2023; originally announced January 2023.

Comments: 8 pages, 7 figures

High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors

Authors: R. Arcidiacono, G. Borghi, M. Boscardin, N. Cartiglia, M. Centis Vignali, M. Costa, G-F. Dalla Betta, M. Ferrero, F. Ficorella, G. Gioachin, L. Lanteri, M. Mandurrino, L. Menzio, R. Mulargia, L. Pancheri, G. Paternoster, A. Rojas, H-F W. Sadrozinski, A. Seiden, F. Siviero, V. Sola, M. Tornago

Abstract: The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sen… ▽ More The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sensors from the second RSD production at the Fondazione Bruno Kessler. The paper first introduces the parametrization of the errors in the determination of the position and time coordinates in RSD, then outlines the reconstruction method, and finally presents the results. Three different pixel sizes are used in the analysis: 200 x 340, 450 x 450, and 1300 x 1300 microns^2. At gain = 30, the 450 x 450 microns^2 pixel achieves a time jitter of 20 ps and a spatial resolution of 15 microns concurrently, while the 1300 x 1300 microns^2 pixel achieves 30 ps and 30 micron, respectively. The implementation of cross-shaped electrodes improves considerably the response uniformity over the pixel surface. △ Less

Submitted 24 November, 2022; originally announced November 2022.

Comments: 28 pages, 23 figures submitted to NIMA

A Compensated Design of the LGAD Gain Layer

Authors: Valentina Sola, Roberta Arcidiacono, Patrick Asenov, Giacomo Borghi, Maurizio Boscardin, Nicolò Cartiglia, Matteo Centis Vignali, Tommaso Croci, Marco Ferrero, Alessandro Fondacci, Giulia Gioachin, Simona Giordanengo, Leonardo Lantieri, Marco Mandurrino, Luca Menzio, Vincenzo Monaco, Arianna Morozzi, Francesco Moscatelli, Daniele Passeri, Nadia Pastrone, Giovanni Paternoster, Federico Siviero, Amedeo Staiano, Marta Tornago

Abstract: In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim… ▽ More In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim at designing a gain layer resulting from the overlap of a p$^+$ and an n$^+$ implants: the difference between acceptor and donor do** will result in an effective concentration of about 5E16/cm$^3$, similar to standard LGADs. At present, the gain mechanism of LGAD sensors under irradiation is maintained up to a fluence of $\sim$ 1-2E15/cm$^2$, and then it is lost due to the acceptor removal mechanism. The new design will be more resilient to radiation, as both acceptor and donor atoms will undergo removal with irradiation, but their difference will maintain constant. The compensated design will empower the 4D tracking ability typical of the LGAD sensors well above 1E16/cm$^2$. △ Less

Submitted 1 September, 2022; originally announced September 2022.

Comments: Keywords: Silicon sensor, LGAD, Compensation, Compensated LGAD, Gain layer, 4D tracking, Radiation hardness

Journal ref: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volume 1040, 2022, 167232

Silicon sensors with resistive read-out: Machine Learning techniques for ultimate spatial resolution

Authors: Marta Tornago, Flavio Giobergia, Luca Menzio, Federico Siviero, Roberta Arcidiacono, Nicolò Cartiglia, Marco Costa, Marco Ferrero, Giulia Gioachin, Marco Mandurrino, Valentina Sola

Abstract: Resistive AC-coupled Silicon Detectors (RSDs) are based on the Low Gain Avalanche Diode (LGAD) technology, characterized by a continuous gain layer, and by the innovative introduction of resistive read-out. Thanks to a novel electrode design aimed at maximizing signal sharing, RSD2, the second RSD production by Fondazione Bruno Kessler (FBK), achieves a position resolution on the whole pixel surfa… ▽ More Resistive AC-coupled Silicon Detectors (RSDs) are based on the Low Gain Avalanche Diode (LGAD) technology, characterized by a continuous gain layer, and by the innovative introduction of resistive read-out. Thanks to a novel electrode design aimed at maximizing signal sharing, RSD2, the second RSD production by Fondazione Bruno Kessler (FBK), achieves a position resolution on the whole pixel surface of about 8 $μm$ for 200-$μm$ pitch. RSD2 arrays have been tested using a Transient Current Technique setup equipped with a 16-channel digitizer, and results on spatial resolution have been obtained with machine learning algorithms. △ Less

Submitted 2 November, 2022; v1 submitted 17 August, 2022; originally announced August 2022.

Comments: 2 pages, 2 figure

Beam test results of 25 $μ$m and 35 $μ$m thick FBK UFSD]{Beam test results of 25 $μ$m and 35 $μ$m thick FBK ultra fast silicon detectors

Authors: F. Carnesecchi, S. Strazzi, A. Alici, R. Arcidiacono, G. Borghi, M. Boscardin, N. Cartiglia, M. Centis Vignali, D. Cavazza, G. -F. Dalla Betta, S. Durando, M. Ferrero, F. Ficorella, O. Hammad Ali, M. Mandurrino, A. Margotti, L. Menzio, R. Nania, L. Pancheri, G. Paternoster, G. Scioli, F. Siviero, V. Sola, M. Tornago, G. Vignola

Abstract: This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $μ$m and 35 $μ$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$μ$m thick… ▽ More This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $μ$m and 35 $μ$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$μ$m thick sensor, taken as reference. Their timing performances have been studied as a function of the applied voltage and gain. A time resolution of about 25 ps and of 22 ps at a voltage of 120 V and 240 V has been obtained for the 25 and 35 $μ$m thick UFSDs, respectively. △ Less

Submitted 11 August, 2022; originally announced August 2022.

DC-coupled resistive silicon detectors for 4-D tracking

Authors: L. Menzio, R. Arcidiacono, G. Borghi, M. Boscardin, N. Cartiglia, M. Centis Vignali, M. Costa, G-F. Dalla Betta, M. Ferrero, F. Ficorella, G. Gioachin, M. Mandurrino, L. Pancheri, G. Paternoster, F. Siviero, V. Sola, M. Tornago

Abstract: In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key feat… ▽ More In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key features of the RSD design are maintained, yielding excellent timing and spatial resolutions: a few tens of ps and a few microns. In the presentation, we will outline the optimization methodology and the results of the simulation. We will present detailed studies on the effect of changing the ratio between the n+ layer resistivity and the low-resistivity ring and on the achievable temporal and spatial resolution. △ Less

Submitted 14 April, 2022; originally announced April 2022.

4D Tracking: Present Status and Perspective

Authors: N. Cartiglia, R. Arcidiacono, M. Costa, M. Ferrero, G. Gioachin, M. Mandurrino, L. Menzio, F. Siviero, V. Sola, M. Tornago

Abstract: The past ten years have seen the advent of silicon-based precise timing detectors for charged particle tracking. The underlying reason for this evolution is a design innovation: the Low-Gain Avalanche Diode (LGAD). In its simplicity, the LGAD design is an obvious step with momentous consequences: low gain leads to large signals maintaining sensors stability and low noise, allowing sensor segmentat… ▽ More The past ten years have seen the advent of silicon-based precise timing detectors for charged particle tracking. The underlying reason for this evolution is a design innovation: the Low-Gain Avalanche Diode (LGAD). In its simplicity, the LGAD design is an obvious step with momentous consequences: low gain leads to large signals maintaining sensors stability and low noise, allowing sensor segmentation. Albeit introduced for a different reason, to compensate for charge trap** in irradiated silicon sensors, LGAD found fertile ground in the design of silicon-based timing detectors. Spurred by this design innovation, solid-state-based timing detectors for charged particles are going through an intense phase of R&D, and hybrid and monolithic sensors, with or without internal gain, are being explored. This contribution offers a review of this booming field. △ Less

Submitted 11 July, 2022; v1 submitted 13 April, 2022; originally announced April 2022.

Comments: 10 pages, 11 figures double column, VCI2022

First experimental results of the spatial resolution of RSD pad arrays read out with a 16-ch board

Authors: F. Siviero, F. Giobergia, L. Menzio, F. Miserocchi, M. Tornago, R. Arcidiacono, N. Cartiglia, M. Costa, M. Ferrero, G. Gioachin, M. Mandurrino, V. Sola

Abstract: Resistive Silicon Detectors (RSD, also known as AC-LGAD) are innovative silicon sensors, based on the LGAD technology, characterized by a continuous gain layer that spreads across the whole sensor active area. RSDs are very promising tracking detectors, thanks to the combination of the built-in signal sharing with the internal charge multiplication, which allows large signals to be seen over multi… ▽ More Resistive Silicon Detectors (RSD, also known as AC-LGAD) are innovative silicon sensors, based on the LGAD technology, characterized by a continuous gain layer that spreads across the whole sensor active area. RSDs are very promising tracking detectors, thanks to the combination of the built-in signal sharing with the internal charge multiplication, which allows large signals to be seen over multiple read-out channels. This work presents the first experimental results obtained from a 3$\times$4 array with 200~\mum~pitch, coming from the RSD2 production manufactured by FBK, read out with a 16-ch digitizer. A machine learning model has been trained, with experimental data taken with a precise TCT laser setup, and then used to predict the laser shot positions, finding a spatial resolution of $\sim$~5.5~\mum. △ Less

Submitted 13 April, 2022; originally announced April 2022.

Tuning of gain layer do** concentration and Carbon implantation effect on deep gain layer

Authors: S. M. Mazza, C. Gee, Y. Zhao, R. Padilla, E. Ryan, N. Tournebise, B. Darby, F. McKinney-Martinez, H. F. -W. Sadrozinski, A. Seiden, B. Schumm, V. Cindro, G. Kramberger, I. Mandić, M. Mikuž, M. Zavrtanik, R. Arcidiacono, N. Cartiglia, M. Ferrero, M. Mandurrino, V. Sola, A. Staiano, M. Boscardin, G. F. Della Betta, F. Ficorella , et al. (2 additional authors not shown)

Abstract: Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutrons at the JSI facility in Ljubljana. Sensors were irradiated to a maximum 1-MeV equivalent fluence of 2.5E15 Neq/cm2. The sensors analysed in this paper are an improvement after the lessons learned from previous FBK and… ▽ More Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutrons at the JSI facility in Ljubljana. Sensors were irradiated to a maximum 1-MeV equivalent fluence of 2.5E15 Neq/cm2. The sensors analysed in this paper are an improvement after the lessons learned from previous FBK and HPK productions that were already reported in precedent papers. The gain layer of HPK sensors was fine-tuned to optimize the performance before and after irradiation. FBK sensors instead combined the benefit of Carbon infusion and deep gain layer to further the radiation hardness of the sensors and reduced the bulk thickness to enhance the timing resolution. The sensor performance was measured in charge collection studies using \b{eta}-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. The collected charge and the timing resolution were measured as a function of bias voltage at -30C. Finally a correlation is shown between the bias voltage to deplete the gain layer and the bias voltage needed to reach a certain amount of gain in the sensor. HPK sensors showed a better performance before irradiation while maintaining the radiation hardness of the previous production. FBK sensors showed exceptional radiation hardness allowing a collected charge up to 10 fC and a time resolution of 40 ps at the maximum fluence. △ Less

Submitted 31 January, 2022; v1 submitted 21 January, 2022; originally announced January 2022.

Comments: arXiv admin note: text overlap with arXiv:2004.05260

Optimization of the Gain Layer Design of Ultra-Fast Silicon Detectors

Authors: Federico Siviero, Roberta Arcidiacono, Giacomo Borghi, Maurizio Boscardin, Nicolo Cartiglia, Matteo Centis Vignali, Marco Costa, Gian Franco Dalla Betta, Marco Ferrero, Francesco Ficorella, Giulia Gioachin, Marco Mandurrino, Simone Mazza, Luca Menzio, Lucio Pancheri, Giovanni Paternoster, Hartmut F. W. Sadrozinski, Abraham Seiden, Valentina Sola, Marta Tornago

Abstract: In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research activities, the so-called Ultra-Fast Silicon Detectors (UFSDs), silicon sensors optimized for timing based on the Low-Gain Avalanche Diode (LGAD) design, have been… ▽ More In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research activities, the so-called Ultra-Fast Silicon Detectors (UFSDs), silicon sensors optimized for timing based on the Low-Gain Avalanche Diode (LGAD) design, have been proposed and adopted by the CMS and ATLAS collaborations for their respective timing layers. The defining feature of the Ultra-Fast Silicon Detectors (UFSDs) is the internal multiplication mechanism, determined by the gain layer design. In this paper, the performances of several types of gain layers, measured with a telescope instrumented with a $^{90}$Sr $β$-source, are reported and compared. The measured sensors are produced by Fondazione Bruno Kessler (FBK) and Hamamatsu Photonics (HPK). The sensor yielding the best performance, both when new and irradiated, is an FBK 45\mum-thick sensor with a carbonated deep gain implant, where the carbon and the boron implants are annealed concurrently with a low thermal load. This sensor is able to achieve a time resolution of 40~ps up to a radiation fluence of~\fluence{2.5}{15}, delivering at least 5~fC of charge. △ Less

Submitted 8 March, 2022; v1 submitted 1 December, 2021; originally announced December 2021.

Comments: v3 revised version as requested by Editor

The second production of RSD (AC-LGAD) at FBK

Authors: M. Mandurrino, R. Arcidiacono, A. Bisht, G. Borghi, M. Boscardin, N. Cartiglia, M. Centis Vignali, G. -F. Dalla Betta, M. Ferrero, F. Ficorella, O. Hammad Ali, A. D. Martinez Rojas, L. Menzio, L. Pancheri, G. Paternoster, F. Siviero, V. Sola, M. Tornago

Abstract: In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LGAD technology that get rid of any segmentation implant in order to achieve the 100% fill-factor. They are characterized by three key-elements, (i) a c… ▽ More In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LGAD technology that get rid of any segmentation implant in order to achieve the 100% fill-factor. They are characterized by three key-elements, (i) a continuous gain implant, (ii) a resistive n-cathode and (iii) a dielectric coupling layer deposited on top, guaranteeing a good spatial reconstruction of the hit position while benefiting from the good timing properties of LGADs. We will start from the very promising results of our RSD1 batch in terms of tracking performances and then we will move to the description of the design of the RSD2 run. In particular, the principles driving the sensor design and the specific AC-electrode layout adopted to optimize the signal confinement will be addressed. △ Less

Submitted 8 June, 2022; v1 submitted 28 November, 2021; originally announced November 2021.

Inter-pad dead regions of irradiated FBK Low Gain Avalanche Detectors

Authors: B. Darby, S. M. Mazza, F. McKinney-Martinez, R. Padilla, H. F. -W. Sadrozinski, A. Seiden, B. Schumm, M. Wilder, Y. Zhao, R. Arcidiacono, N. Cartiglia, M. Ferrero, M. Mandurrino, V. Sola, A. Staiano, V. Cindro, G. Kranberger, I. Mandiz, M. Mikuz, M. Zavtranik, M. Boscardin, G. F. Della Betta, F. Ficorella, L. Pancheri, G. Paternoster

Abstract: Low Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer. LGADs manufactured by Fondazione Bruno Kessler (FBK) were tested before and after irradiation with neutrons. In this study, the Inter-pad distances (IPDs), defined as the width of the distances between pads, were measured with a TCT laser system. The response of the laser was tuned using $β$-pa… ▽ More Low Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer. LGADs manufactured by Fondazione Bruno Kessler (FBK) were tested before and after irradiation with neutrons. In this study, the Inter-pad distances (IPDs), defined as the width of the distances between pads, were measured with a TCT laser system. The response of the laser was tuned using $β$-particles from a 90Sr source. These insensitive "dead zones" are created by a protection structure to avoid breakdown, the Junction Termination Extension (JTE), which separates the pads. The effect of neutron radiation damage at \fluence{1.5}{15}, and \fluence{2.5}{15} on IPDs was studied. These distances are compared to the nominal distances given from the vendor, it was found that the higher fluence corresponds to a better matching of the nominal IPD. △ Less

Submitted 19 September, 2022; v1 submitted 24 November, 2021; originally announced November 2021.

Combined analysis of HPK 3.1 LGADs using a proton beam, beta source, and probe station towards establishing high volume quality control

Authors: Ryan Heller, Andrés Abreu, Artur Apresyan, Roberta Arcidiacono, Nicolò Cartiglia, Karri DiPetrillo, Marco Ferrero, Meraj Hussain, Margaret Lazarovitz, Hakseong Lee, Sergey Los, Chang-Seong Moon, Cristián Peña, Federico Siviero, Valentina Sola, Tanvi Wamorkar, Si Xie

Abstract: The upgrades of the CMS and ATLAS experiments for the high luminosity phase of the Large Hadron Collider will employ precision timing detectors based on Low Gain Avalanche Detectors (LGADs). We present a suite of results combining measurements from the Fermilab Test Beam Facility, a beta source telescope, and a probe station, allowing full characterization of the HPK type 3.1 production of LGAD pr… ▽ More The upgrades of the CMS and ATLAS experiments for the high luminosity phase of the Large Hadron Collider will employ precision timing detectors based on Low Gain Avalanche Detectors (LGADs). We present a suite of results combining measurements from the Fermilab Test Beam Facility, a beta source telescope, and a probe station, allowing full characterization of the HPK type 3.1 production of LGAD prototypes developed for these detectors. We demonstrate that the LGAD response to high energy test beam particles is accurately reproduced with a beta source. We further establish that probe station measurements of the gain implant accurately predict the particle response and operating parameters of each sensor, and conclude that the uniformity of the gain implant in this production is sufficient to produce full-sized sensors for the ATLAS and CMS timing detectors. △ Less

Submitted 16 April, 2021; originally announced April 2021.

Comments: 20 page, 20 figures

Test beam characterization of sensor prototypes for the CMS Barrel MIP Timing Detector

Authors: R. Abbott, A. Abreu, F. Addesa, M. Alhusseini, T. Anderson, Y. Andreev, A. Apresyan, R. Arcidiacono, M. Arenton, E. Auffray, D. Bastos, L. A. T. Bauerdick, R. Bellan, M. Bellato, A. Benaglia, M. Benettoni, R. Bertoni, M. Besancon, S. Bharthuar, A. Bornheim, E. Brücken, J. N. Butler, C. Campagnari, M. Campana, R. Carlin , et al. (174 additional authors not shown)

Abstract: The MIP Timing Detector will provide additional timing capabilities for detection of minimum ionizing particles (MIPs) at CMS during the High Luminosity LHC era, improving event reconstruction and pileup rejection. The central portion of the detector, the Barrel Timing Layer (BTL), will be instrumented with LYSO:Ce crystals and Silicon Photomultipliers (SiPMs) providing a time resolution of about… ▽ More The MIP Timing Detector will provide additional timing capabilities for detection of minimum ionizing particles (MIPs) at CMS during the High Luminosity LHC era, improving event reconstruction and pileup rejection. The central portion of the detector, the Barrel Timing Layer (BTL), will be instrumented with LYSO:Ce crystals and Silicon Photomultipliers (SiPMs) providing a time resolution of about 30 ps at the beginning of operation, and degrading to 50-60 ps at the end of the detector lifetime as a result of radiation damage. In this work, we present the results obtained using a 120 GeV proton beam at the Fermilab Test Beam Facility to measure the time resolution of unirradiated sensors. A proof-of-concept of the sensor layout proposed for the barrel region of the MTD, consisting of elongated crystal bars with dimensions of about 3 x 3 x 57 mm$^3$ and with double-ended SiPM readout, is demonstrated. This design provides a robust time measurement independent of the impact point of the MIP along the crystal bar. We tested LYSO:Ce bars of different thickness (2, 3, 4 mm) with a geometry close to the reference design and coupled to SiPMs manufactured by Hamamatsu and Fondazione Bruno Kessler. The various aspects influencing the timing performance such as the crystal thickness, properties of the SiPMs (e.g. photon detection efficiency), and impact angle of the MIP are studied. A time resolution of about 28 ps is measured for MIPs crossing a 3 mm thick crystal bar, corresponding to an MPV energy deposition of 2.6 MeV, and of 22 ps for the 4.2 MeV MPV energy deposition expected in the BTL, matching the detector performance target for unirradiated devices. △ Less

Submitted 16 July, 2021; v1 submitted 15 April, 2021; originally announced April 2021.

Journal ref: Journal of Instrumentation, Volume 16, July 2021

First application of machine learning algorithms to the position reconstruction in Resistive Silicon Detectors

Authors: Federico Siviero, Roberta Arcidiacono, Nicolò Cartiglia, Marco Costa, Marco Ferrero, Marco Mandurrino, Valentina Sola, Amedeo Staiano, Marta Tornago

Abstract: RSDs (Resistive AC-Coupled Silicon Detectors) are n-in-p silicon sensors based on the LGAD (Low-Gain Avalanche Diode) technology, featuring a continuous gain layer over the whole sensor area. The truly innovative feature of these sensors is that the signal induced by an ionising particle is seen on several pixels, allowing the use of reconstruction techniques that combine the information from many… ▽ More RSDs (Resistive AC-Coupled Silicon Detectors) are n-in-p silicon sensors based on the LGAD (Low-Gain Avalanche Diode) technology, featuring a continuous gain layer over the whole sensor area. The truly innovative feature of these sensors is that the signal induced by an ionising particle is seen on several pixels, allowing the use of reconstruction techniques that combine the information from many read-out channels. In this contribution, the first application of a machine learning technique to RSD devices is presented. The spatial resolution of this technique is compared to that obtained with the standard RSD reconstruction methods that use analytical descriptions of the signal sharing mechanism. A Multi-Output regressor algorithm, trained with a combination of simulated and real data, leads to a spatial resolution of less than 2 $μm$ for a sensor with a 100 $μm$ pixel. The prospects of future improvements are also discussed. △ Less

Submitted 26 January, 2021; v1 submitted 4 November, 2020; originally announced November 2020.

Resistive AC-Coupled Silicon Detectors: principles of operation and first results from a combined analysis of beam test and laser data

Authors: M. Tornago, R. Arcidiacono, N. Cartiglia, M. Costa, M. Ferrero, M. Mandurrino, F. Siviero, V. Sola, A. Staiano, A. Apresyan, K. Di Petrillo, R. Heller, S. Los, G. Borghi, M. Boscardin, G-F Dalla Betta, F. Ficorella, L. Pancheri, G. Paternoster, H. Sadrozinski, A. Seiden

Abstract: This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the $n^+$ implant has been designed to be resistive, and the read-out is obtained v… ▽ More This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the $n^+$ implant has been designed to be resistive, and the read-out is obtained via AC-coupling. The truly innovative feature of RSD is that the signal generated by an im**ing particle is shared isotropically among multiple read-out pads without the need for floating electrodes or an external magnetic field. Careful tuning of the coupling oxide thickness and the $n^+$ do** profile is at the basis of the successful functioning of this device. Several RSD matrices with different pad width-pitch geometries have been extensively tested with a laser setup in the Laboratory for Innovative Silicon Sensors in Torino, while a smaller set of devices have been tested at the Fermilab Test Beam Facility with a 120 GeV/c proton beam. The measured spatial resolution ranges between $2.5\; μm$ for 70-100 pad-pitch geometry and $17\; μm$ with 200-500 matrices, a factor of 10 better than what is achievable in binary read-out ($bin\; size/ \sqrt{12}$). Beam test data show a temporal resolution of $\sim 40\; ps$ for 200-$μm$ pitch devices, in line with the best performances of LGAD sensors at the same gain. △ Less

Submitted 11 February, 2021; v1 submitted 18 July, 2020; originally announced July 2020.

Comments: 34 pages, 33 figures

Potential for Improved Time Resolution Using Very Thin Ultra-Fast Silicon Detectors (UFSDs)

Authors: A. Seiden, H. Ren, Y. **, S. Christie, Z. Galloway, C. Gee, C. Labitan, M. Lockerby, F. Martinez-McKinney, S. M. Mazza, R. Padilla, H. F. -W. Sadrozinski, B. Schumm, M. Wilder, W. Wyatt, Y. Zhao, N. Cartiglia

Abstract: Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and the junction of the sensor. The presence of gain allows excellent time measurement for im**ing minimum ionizing charged particles. An important design consideration is the sensor thickness, which has a stron… ▽ More Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and the junction of the sensor. The presence of gain allows excellent time measurement for im**ing minimum ionizing charged particles. An important design consideration is the sensor thickness, which has a strong impact on the achievable time resolution. We present the result of measurements for LGADs of thickness between 20 micro-m and 50 micro-m. The data are fit to a formula that captures the impact of both electronic jitter and Landau fluctuations on the time resolution. The data illustrate the importance of having a saturated electron drift velocity and a large signal-to-noise in order to achieve good time resolution. Sensors of 20 micro-m thickness offer the potential of 10 to 15 ps time resolution per measurement, a significant improvement over the value for the 50 micro-m sensors that have been typically used to date. △ Less

Submitted 24 February, 2021; v1 submitted 7 June, 2020; originally announced June 2020.

Comments: 14 pages, 11 figures, 2 tables

Effect of deep gain layer and Carbon infusion on LGAD radiation hardness

Authors: R Padilla, C. Labitan, Z. Galloway, C. Gee, S. M. Mazza, F. McKinney-Martinez, H. F. -W. Sadrozinski, A. Seiden, B. Schumm, M. Wilder, Y. Zhao, H. Ren, Y. **, M. Lockerby, V. Cindro, G. Kramberger, I. Mandiz, M. Mikuz, M. Zavrtanik, R. Arcidiacono, N. Cartiglia, M. Ferrero, M. Mandurrino, V. Sola, A. Staiano

Abstract: The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with 1 MeV neutrons. Their performance were measured in charge collection studies using b-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. Car… ▽ More The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with 1 MeV neutrons. Their performance were measured in charge collection studies using b-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. Carbon infusion to the gain layer of the sensors was tested by FBK in the UFSD3 production. HPK instead produced LGADs with a very thin, highly doped and deep multiplication layer. The sensors were exposed to a neutron fluence from 4e14 neq/cm2 to 4e15 neq/cm2. The collected charge and the timing resolution were measured as a function of bias voltage at -30C, furthermore the profile of the capacitance over voltage of the sensors was measured. △ Less

Submitted 27 July, 2020; v1 submitted 10 April, 2020; originally announced April 2020.

Comments: 13 pages, 10 figures, 16 references

Silicon Sensors for Future Particle Trackers

Authors: N. Cartiglia, R. Arcidiacono, G. Borghi, M. Boscardin, M. Costa, Z. Galloway, F. Fausti, M. Ferrero, F. Ficorella, M. Mandurrino, S. Mazza, E. J. Olave, G. Paternoster, F. Siviero, H. F-W. Sadrozinski, V. Sola, A. Staiano, A. Seiden, M. Tornago, Y. Zhao

Abstract: Several future high-energy physics facilities are currently being planned. The proposed projects include high energy $e^+ e^-$ circular and linear colliders, hadron colliders and muon colliders, while the Electron-Ion Collider (EIC) has already been approved for construction at the Brookhaven National Laboratory. Each proposal has its own advantages and disadvantages in term of readiness, cost, sc… ▽ More Several future high-energy physics facilities are currently being planned. The proposed projects include high energy $e^+ e^-$ circular and linear colliders, hadron colliders and muon colliders, while the Electron-Ion Collider (EIC) has already been approved for construction at the Brookhaven National Laboratory. Each proposal has its own advantages and disadvantages in term of readiness, cost, schedule and physics reach, and each proposal requires the design and production of specific new detectors. This paper first presents the performances required to the future silicon tracking systems at the various new facilities, and then it illustrates a few possibilities for the realization of such silicon trackers. The challenges posed by the future facilities require a new family of silicon detectors, where features such as impact ionization, radiation damage saturation, charge sharing, and analog readout are exploited to meet these new demands. △ Less

Submitted 31 March, 2020; originally announced March 2020.

Experimental Study of Acceptor Removal in UFSD

Authors: Y. **, H. Ren, S. Christie, Z. Galloway, C. Gee, C. Labitan, M. Lockerby, F. Martinez-McKinney, S. M. Mazza, R. Padilla, H. F. -W. Sadrozinski, B. Schumm, A. Seiden, M. Wilder, W. Wyatt, Y. Zhao, R. Arcidiacono, N. Cartiglia, M. Ferrero, M. Mandurrino, F. Siviero, V. Sola, M. Tornago, V. Cindro, A. Howard , et al. (3 additional authors not shown)

Abstract: The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with C-V measurements of the do** concentration and with measurements of charge collection using charged particles. We find a perfect linear correlation between t… ▽ More The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with C-V measurements of the do** concentration and with measurements of charge collection using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C-V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented. △ Less

Submitted 16 September, 2020; v1 submitted 16 March, 2020; originally announced March 2020.

Comments: 14 pages, 10 Figs., Sumitted to HSTD12 Hiroshima 2019

High performance picosecond- and micron-level 4D particle tracking with 100% fill-factor Resistive AC-Coupled Silicon Detectors (RSD)

Authors: M. Mandurrino, N. Cartiglia, M. Tornago, M. Ferrero, F. Siviero, G. Paternoster, F. Ficorella, M. Boscardin, L. Pancheri, G. F. Dalla Betta

Abstract: In this paper we present a complete characterization of the first batch of Resistive AC-Coupled Silicon Detectors, called RSD1, designed at INFN Torino and manufactured by Fondazione Bruno Kessler (FBK) in Trento. With their 100% fill-factor, RSD represent the new enabling technology for high-precision 4D-tracking. Indeed, being based on the well-known charge multiplication mechanism of Low-Gain A… ▽ More In this paper we present a complete characterization of the first batch of Resistive AC-Coupled Silicon Detectors, called RSD1, designed at INFN Torino and manufactured by Fondazione Bruno Kessler (FBK) in Trento. With their 100% fill-factor, RSD represent the new enabling technology for high-precision 4D-tracking. Indeed, being based on the well-known charge multiplication mechanism of Low-Gain Avalanche Detectors (LGAD), they benefit from the very good timing performances of such technology together with an unprecedented resolution of the spatial tracking, which allows to reach the micron-level scale in the track reconstruction. This is essentially due to the absence of any segmentation structure between pads (100% fill-factor) and to other two innovative key-features: the first one is a properly doped n+ resistive layer, slowing down the charges just after being multiplied, and the second one is a dielectric layer grown on Silicon, inducing a capacitive coupling on the metal pads deposited on top of the detector. The very good spatial resolution (micron-level) we measured experimentally - higher than the nominal pad pitch - comes from the analogical nature of the readout of signals, whose amplitude attenuates from the pad center to its periphery, while the outstanding results in terms of timing (less than 14 ps, even better than standard LGAD) are due to a combination of very-fine pitch, analogical response and charge multiplication. △ Less

Submitted 24 March, 2020; v1 submitted 10 March, 2020; originally announced March 2020.

Tracking particles at fluences 5-10 $\cdot$1E16 $n_{eq}$/cm$^2$

Authors: N. Cartiglia, H. Sadrozinski, A. Seiden

Abstract: This paper presents the possibility of using very thin Low Gain Avalanche Diodes (LGAD) ($25 - 50μ$m thick) as tracking detector at future hadron colliders, where particle fluence will be above $10^{16}\; n_{eq}/cm^2$. In the present design, silicon sensors at the High-Luminosity LHC will be 100- 200 $μ$m thick, generating, before irradiation, signals of 1-2 fC. This contribution shows how very th… ▽ More This paper presents the possibility of using very thin Low Gain Avalanche Diodes (LGAD) ($25 - 50μ$m thick) as tracking detector at future hadron colliders, where particle fluence will be above $10^{16}\; n_{eq}/cm^2$. In the present design, silicon sensors at the High-Luminosity LHC will be 100- 200 $μ$m thick, generating, before irradiation, signals of 1-2 fC. This contribution shows how very thin LGAD can provide signals of the same magnitude via the interplay of gain in the gain layer and gain in the bulk up to fluences above $10^{16}\; n_{eq}/cm^2$: up to fluences of 0.1-0.3$\cdot 10^{16}\; n_{eq}/cm^2$, thin LGADs maintain a gain of $\sim$ 5-10 while at higher fluences the increased bias voltage will trigger the onset of multiplication in the bulk, providing the same gain as previously obtained in the gain layer. Key to this idea is the possibility of a reliable, high-density LGAD design able to hold large bias voltages ($\sim$ 500V). △ Less

Submitted 30 August, 2019; originally announced August 2019.

First demonstration of 200, 100, and 50 um pitch Resistive AC-Coupled Silicon Detectors (RSD) with 100% fill-factor for 4D particle tracking

Authors: M. Mandurrino, R. Arcidiacono, M. Boscardin, N. Cartiglia, G. F. Dalla Betta, M. Ferrero, F. Ficorella, L. Pancheri, G. Paternoster, F. Siviero, M. Tornago

Abstract: We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant and a coupling dielectric layer have been implemented. The first feature works as a resistive sheet, freezing the multiplied charges, while the second one acts as a capacitive coupling for readout pads. We s… ▽ More We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant and a coupling dielectric layer have been implemented. The first feature works as a resistive sheet, freezing the multiplied charges, while the second one acts as a capacitive coupling for readout pads. We succeeded in the challenging goal of obtaining very fine pitch (50, 100, and 200 um) while maintaining the signal waveforms suitable for high timing and 4D-tracking performances, as in the standard LGAD-based devices. △ Less

Submitted 23 September, 2019; v1 submitted 7 July, 2019; originally announced July 2019.

Proprieties of FBK UFSDs after neutron and proton irradiation up to 6*10e15 neq/cm2

Authors: S. M. Mazza, E. Estrada, Z. Galloway, C. Gee, A. Goto, Z. Luce, F. McKinney-Martinez, R. Rodriguez, H. F. -W. Sadrozinski, A. Seiden, B. Smithers, Y. Zhao, V. Cindro, G. Kramberger, I. Mandić, M. Mikuž, M. Zavrtanik R. Arcidiacono, N. Cartiglia, M. Ferrero, M. Mandurrino, V. Sola, A. Staiano, M. Boscardin, G. F. Della Betta, F. Ficorella , et al. (2 additional authors not shown)

Abstract: The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. The irradiati… ▽ More The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. The irradiation with neutrons took place at the TRIGA reactor in Ljubljana, while the proton irradiation took place at CERN SPS. The sensors were exposed to a neutron fluence of 4*10e14, 8*1014, 1.5*10e15, 3*10e15, 6*10e15 neq/cm2 and to a proton fluence of 9.6*10e14 p/cm2, equivalent to a fluence of 6*10e14 neq/cm2. The internal gain and the timing resolution were measured as a function of bias voltage at -20C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both. △ Less

Submitted 18 March, 2020; v1 submitted 15 April, 2018; originally announced April 2018.

Comments: arXiv admin note: text overlap with arXiv:1803.02690

Comparison of 35 and 50 μm thin HPK UFSD after neutron irradiation up to 6*10^15 neq/cm^2

Authors: Y. Zhao, N. Cartiglia, E. Estrada, Z. Galloway, C. Gee, A. Goto, Z. Luce, S. M. Mazza, F. McKinney-Martinez, R. Rodriguez, H. F. -W. Sadrozinski, A. Seiden V. Cindro, G. Kramberger, I. Mandić, M. Mikuž, M. Zavrtanik

Abstract: We report results from the testing of 35 μm thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported before on 50 μm thick UFSD produced by HPK. The 35 μm thick sensors were irradiated with neutrons to fluences of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. The sensors were tested pre-irradiation and post-irr… ▽ More We report results from the testing of 35 μm thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported before on 50 μm thick UFSD produced by HPK. The 35 μm thick sensors were irradiated with neutrons to fluences of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source. The leakage current, capacitance, internal gain and the timing resolution were measured as a function of bias voltage at -20C and -27C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both. Within the fluence range measured, the advantage of the 35 μm thick UFSD in timing accuracy, bias voltage and power can be established. △ Less

Submitted 5 March, 2018; originally announced March 2018.

Comments: 9 pages, 9 figures, HSTD11 Okinawa. arXiv admin note: text overlap with arXiv:1707.04961

First FBK Production of 50$μ$m Ultra-Fast Silicon Detectors

Authors: V. Sola, R. Arcidiacono, M. Boscardin, N. Cartiglia, G. -F. Dalla Betta, F. Ficorella, M. Ferrero, M. Mandurrino, L. Pancheri, G. Paternoster, A. Staiano

Abstract: Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 $μ$m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer do** profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multi… ▽ More Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 $μ$m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer do** profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of $φ\sim$ 10$^{15}$ n$_{eq}$/cm$^2$. In this paper, we present the characterisation, the timing performances, and the results on radiation damage tolerance of this new FBK production. △ Less

Submitted 6 October, 2018; v1 submitted 12 February, 2018; originally announced February 2018.

Comments: 16 pages, 13 figures, 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Nuclear Instruments and Methods in Physics Research A (2018)

Radiation resistant LGAD design

Authors: M. Ferrero, R. Arcidiacono, M. Barozzi, M. Boscardin, N. Cartiglia, G. F. Dalla Betta, Z. Galloway, M. Mandurrino, S. Mazza, G. Paternoster, F. Ficorella, L. Pancheri, H-F W. Sadrozinski, V. Sola, A. Staiano, A. Seiden, F. Siviero, M. Tornago, Y. Zhao

Abstract: In this paper, we report on the radiation resistance of 50-micron thick LGAD detectors manufactured at the Fondazione Bruno Kessler employing several different do** combinations of the gain layer. LGAD detectors with gain layer do** of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated Gallium have been designed and successfully produced. These sensors have been exposed to ne… ▽ More In this paper, we report on the radiation resistance of 50-micron thick LGAD detectors manufactured at the Fondazione Bruno Kessler employing several different do** combinations of the gain layer. LGAD detectors with gain layer do** of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated Gallium have been designed and successfully produced. These sensors have been exposed to neutron fluences up to $φ_n \sim 3 \cdot 10^{16}\; n/cm^2$ and to proton fluences up to $φ_p \sim 9\cdot10^{15}\; p/cm^2$ to test their radiation resistance. The experimental results show that Gallium-doped LGADs are more heavily affected by initial acceptor removal than Boron-doped LGAD, while the presence of Carbon reduces initial acceptor removal both for Gallium and Boron do**. Boron low-diffusion shows a higher radiation resistance than that of standard Boron implant, indicating a dependence of the initial acceptor removal mechanism upon the implant width. This study also demonstrates that proton irradiation is at least twice more effective in producing initial acceptor removal, making proton irradiation far more damaging than neutron irradiation. △ Less

Submitted 31 August, 2018; v1 submitted 5 February, 2018; originally announced February 2018.

Comments: 22 pages, 17 figures

Properties of HPK UFSD after neutron irradiation up to 6e15 n/cm2

Authors: Z. Galloway, V. Fadeyev, P. Freeman, E. Gkougkousis, B. Gruey, C. A. Labitan, Z. Luce, F. McKinney-Martinez, H. F. -W. Sadrozinski, A. Seiden, E. Spencer, M. Wilder, N. Woods, A. Zatserklyaniy, Y. Zhao, N. Cartiglia, M. Ferrero, S. Giordanengo, M. Mandurrino, A. Staiano, V. Sola, F. Cenna, F. Fausti, R. Arcidiacono, F. Carnasecchi , et al. (5 additional authors not shown)

Abstract: In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15, 6e15 n/cm2. The UFSD used in this study are circular 50 micro-meter thick Low-Gain Avalanche Detectors (LGAD), with a 1.0 mm diameter active area. They have been produced by Hamamatsu Photonics (HPK), Japan, with pre-radiation internal gain in th… ▽ More In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15, 6e15 n/cm2. The UFSD used in this study are circular 50 micro-meter thick Low-Gain Avalanche Detectors (LGAD), with a 1.0 mm diameter active area. They have been produced by Hamamatsu Photonics (HPK), Japan, with pre-radiation internal gain in the range 10-100 depending on the bias voltage. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particle (MIPs) from a 90Sr based \b{eta}-source. The leakage current, internal gain and the timing resolution were measured as a function of bias voltage at -20C and -30C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both. The dependence of the gain upon the irradiation fluence is consistent with the concept of acceptor removal and the gain decreases from about 80 pre-irradiation to 7 after a fluence of 6e15 n/cm2. Consequently, the timing resolution was found to deteriorate from 20 ps to 50 ps. The results indicate that the most accurate time resolution is obtained at a value of the constant fraction discriminator (CFD) threshold used to determine the time of arrival varying with fluence, from 10% pre-radiation to 60% at the highest fluence. Key changes to the pulse shape induced by irradiation, i.e. (i) a reduce sensitivity of the pulse shape on the initial non-uniform charge deposition, (ii) the shortening of the rise time and (iii) the reduced pulse height, were compared with the WF2 simulation program and found to be in agreement. △ Less

Submitted 10 April, 2020; v1 submitted 16 July, 2017; originally announced July 2017.

Comments: 18 pages, 21 figures, 1 table

4-Dimensional Tracking with Ultra-Fast Silicon Detectors

Authors: Hartmut F. -W. Sadrozinski, Abraham Seiden, Nicolò Cartiglia

Abstract: The evolution of particle detectors has always pushed the technological limit in order to provide enabling technologies to researchers in all fields of science. One archetypal example is the evolution of silicon detectors, from a system with a few channels 30 years ago, to the tens of millions of independent pixels currently used to track charged particles in all major particle physics experiments… ▽ More The evolution of particle detectors has always pushed the technological limit in order to provide enabling technologies to researchers in all fields of science. One archetypal example is the evolution of silicon detectors, from a system with a few channels 30 years ago, to the tens of millions of independent pixels currently used to track charged particles in all major particle physics experiments. Nowadays, silicon detectors are ubiquitous not only in research laboratories but in almost every high-tech apparatus, from portable phones to hospitals. In this contribution, we present a new direction in the evolution of silicon detectors for charge particle tracking, namely the inclusion of very accurate timing information. This enhancement of the present silicon detector paradigm is enabled by the inclusion of controlled low gain in the detector response, therefore increasing the detector output signal sufficiently to make timing measurement possible. After providing a short overview of the advantage of this new technology, we present the necessary conditions that need to be met for both sensor and readout electronics in order to achieve 4-dimensional tracking. In the last section we present the experimental results, demonstrating the validity of our research path. △ Less

Submitted 3 July, 2017; v1 submitted 27 April, 2017; originally announced April 2017.

Comments: 72 pages, 3 tables, 55 figures

Test of Ultra Fast Silicon Detectors for Picosecond Time Measurements with a New Multipurpose Read-Out Board

Authors: Nicola Minafra, Hussein Al Ghoul, Roberta Arcidiacono, Nicolo Cartiglia, Laurent Forthomme, Roberto Mulargia, Maria Obertino, Christophe Royon

Abstract: Ultra Fast Silicon Detectors (UFSD) are sensors optimized for timing measurements employing a thin multiplication layer to increase the output signal. A multipurpose read-out board hosting a low-cost, low-power fast amplifier was designed at the University of Kansas and tested at the European Organization for Nuclear Research (CERN) using a 180 GeV pion beam. The amplifier has been designed to rea… ▽ More Ultra Fast Silicon Detectors (UFSD) are sensors optimized for timing measurements employing a thin multiplication layer to increase the output signal. A multipurpose read-out board hosting a low-cost, low-power fast amplifier was designed at the University of Kansas and tested at the European Organization for Nuclear Research (CERN) using a 180 GeV pion beam. The amplifier has been designed to read out a wide range of detectors and it was optimized in this test for the UFSD output signal. In this paper we report the results of the experimental tests using 50 $\rm{μm}$ thick UFSD with a sensitive area of 1.4 $\rm{mm^2}$. A timing precision below 30 ps was achieved. △ Less

Submitted 26 April, 2017; v1 submitted 18 April, 2017; originally announced April 2017.

Test of UFSD Silicon Detectors for the TOTEM Upgrade Project

Authors: R. Arcidiacono, M. Berretti, E. Bossini, M. Bozzo, N. Cartiglia, M. Ferrero, V. Georgiev, T. Isidori, R. Linhart, N. Minafra, M. M. Obertino, V. Sola, N. Turini

Abstract: This paper describes the performance of a prototype timing detector, based on 50 micrometer thick Ultra Fast Silicon Detector, as measured in a beam test using a 180 GeV/c momentum pion beam. The dependence of the time precision on the pixel capacitance and the bias voltage is investigated here. A timing precision from 30 ps to 100 ps, depending on the pixel capacitance, has been measured at a bia… ▽ More This paper describes the performance of a prototype timing detector, based on 50 micrometer thick Ultra Fast Silicon Detector, as measured in a beam test using a 180 GeV/c momentum pion beam. The dependence of the time precision on the pixel capacitance and the bias voltage is investigated here. A timing precision from 30 ps to 100 ps, depending on the pixel capacitance, has been measured at a bias voltage of 180 V. Timing precision has also been measured as a function of the bias voltage. △ Less

Submitted 16 February, 2017; originally announced February 2017.

LHC Forward Physics

Authors: K. Akiba, M. Akbiyik, M. Albrow, M. Arneodo, V. Avati, J. Baechler, O. Villalobos Baillie, P. Bartalini, J. Bartels, S. Baur, C. Baus, W. Beaumont, U. Behrens, D. Berge, M. Berretti, E. Bossini, R. Boussarie, S. Brodsky, M. Broz, M. Bruschi, P. Bussey, W. Byczynski, J. C. Cabanillas Noris, E. Calvo Villar, A. Campbell , et al. (162 additional authors not shown)

Abstract: The goal of this report is to give a comprehensive overview of the rich field of forward physics, with a special attention to the topics that can be studied at the LHC. The report starts presenting a selection of the Monte Carlo simulation tools currently available, chapter 2, then enters the rich phenomenology of QCD at low, chapter 3, and high, chapter 4, momentum transfer, while the unique scat… ▽ More The goal of this report is to give a comprehensive overview of the rich field of forward physics, with a special attention to the topics that can be studied at the LHC. The report starts presenting a selection of the Monte Carlo simulation tools currently available, chapter 2, then enters the rich phenomenology of QCD at low, chapter 3, and high, chapter 4, momentum transfer, while the unique scattering conditions of central exclusive production are analyzed in chapter 5. The last two experimental topics, Cosmic Ray and Heavy Ion physics are presented in the chapter 6 and 7 respectively. Chapter 8 is dedicated to the BFKL dynamics, multiparton interactions, and saturation. The report ends with an overview of the forward detectors at LHC. Each chapter is correlated with a comprehensive bibliography, attempting to provide to the interested reader with a wide opportunity for further studies. △ Less

Submitted 9 December, 2017; v1 submitted 15 November, 2016; originally announced November 2016.

Comments: 358 pages; authors added that were missing; minor fixes in affiliations

Report number: CERN-PH-LPCC-2015-001, SLAC-PUB-16364, DESY 15-167

Journal ref: J. Phys. G: Nucl. Part. Phys. 43 (2016) 110201

Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

Authors: N. Cartiglia, A. Staiano, V. Sola, R. Arcidiacono, R. Cirio, F. Cenna, M. Ferrero, V. Monaco, R. Mulargia, M. Obertino, F. Ravera, R. Sacchi, A. Bellora, S. Durando, M. Mandurrino, N. Minafra, V. Fadeyev, P. Freeman, Z. Galloway, E. Gkougkousis, H. Grabas, B. Gruey, C. A. Labitan, R. Losakul, Z. Luce , et al. (18 additional authors not shown)

Abstract: In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below th… ▽ More In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test belongs to the first production of thin (50 μm) sensors, with an pad area of 1.4 mm2. The gain was measured to vary between 5 and 70 depending on the bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution, determined comparing the time of arrival of the particle in one or more UFSD and the trigger counter, for single UFSD was measured to be 35 ps for a bias voltage of 200 V, and 26 ps for a bias voltage of 240 V, and for the combination of 3 UFSD to be 20 ps for a bias voltage of 200 V, and 15 ps for a bias voltage of 240 V. △ Less

Submitted 3 January, 2017; v1 submitted 30 August, 2016; originally announced August 2016.

Comments: 7 pages, 8 figures, 1 table, Subm. to NIM A

Journal ref: NIM A850, 1 April 2017, pages 83-88

ChPT tests at the NA48 and NA62 experiments at CERN

Authors: NA48/2, NA62 Collaborations, :, F. Ambrosino, A. Antonelli, G. Anzivino, R. Arcidiacono, W. Baldini, S. Balev, J. R. Batley, M. Behler, S. Bifani, C. Biino, A. Bizzeti, B. Bloch-Devaux, G. Bocquet, V. Bolotov, F. Bucci, N. Cabibbo, M. Calvetti, N. Cartiglia, A. Ceccucci, P. Cenci, C. Cerri, C. Cheshkov , et al. (137 additional authors not shown)

Abstract: The NA48/2 Collaboration at CERN has accumulated unprecedented statistics of rare kaon decays in the Ke4 modes: Ke4(+-) ($K^\pm \to π^+ π^- e^\pm ν$) and Ke4(00) ($K^\pm \to π^0 π^0 e^\pm ν$) with nearly one percent background contamination. The detailed study of form factors and branching rates, based on these data, has been completed recently. The results brings new inputs to low energy strong i… ▽ More The NA48/2 Collaboration at CERN has accumulated unprecedented statistics of rare kaon decays in the Ke4 modes: Ke4(+-) ($K^\pm \to π^+ π^- e^\pm ν$) and Ke4(00) ($K^\pm \to π^0 π^0 e^\pm ν$) with nearly one percent background contamination. The detailed study of form factors and branching rates, based on these data, has been completed recently. The results brings new inputs to low energy strong interactions description and tests of Chiral Perturbation Theory (ChPT) and lattice QCD calculations. In particular, new data support the ChPT prediction for a cusp in the $π^0π^0$ invariant mass spectrum at the two charged pions threshold for Ke4(00) decay. New final results from an analysis of about 400 $K^\pm \to π^\pm γγ$ rare decay candidates collected by the NA48/2 and NA62 experiments at CERN during low intensity runs with minimum bias trigger configurations are presented. The results include a model-independent decay rate measurement and fits to ChPT description. △ Less

Submitted 29 January, 2016; originally announced January 2016.

Comments: XIIth International Conference on Heavy Quarks and Leptons 2014, Mainz, Germany

Journal ref: PoS HQL2014 (2014) 022

The AFP and CT-PPS projects

Authors: C. Royon, N. Cartiglia

Abstract: We present the project to install new forward proton detectors in the CMS and ATLAS experiments called PPS and AFP respectively. We present the project to install new forward proton detectors in the CMS and ATLAS experiments called PPS and AFP respectively. △ Less

Submitted 16 March, 2015; originally announced March 2015.

Comments: This article is part of a review about central exclusive diffraction in Int. J. MOd. Phys. and is now published as: Int.J.Mod.Phys. A29 (2014) 28, 1446017

Observation of the rare $B^0_s\toμ^+μ^-$ decay from the combined analysis of CMS and LHCb data

Authors: The CMS, LHCb Collaborations, :, V. Khachatryan, A. M. Sirunyan, A. Tumasyan, W. Adam, T. Bergauer, M. Dragicevic, J. Erö, M. Friedl, R. Frühwirth, V. M. Ghete, C. Hartl, N. Hörmann, J. Hrubec, M. Jeitler, W. Kiesenhofer, V. Knünz, M. Krammer, I. Krätschmer, D. Liko, I. Mikulec, D. Rabady, B. Rahbaran , et al. (2807 additional authors not shown)

Abstract: A joint measurement is presented of the branching fractions $B^0_s\toμ^+μ^-$ and $B^0\toμ^+μ^-$ in proton-proton collisions at the LHC by the CMS and LHCb experiments. The data samples were collected in 2011 at a centre-of-mass energy of 7 TeV, and in 2012 at 8 TeV. The combined analysis produces the first observation of the $B^0_s\toμ^+μ^-$ decay, with a statistical significance exceeding six sta… ▽ More A joint measurement is presented of the branching fractions $B^0_s\toμ^+μ^-$ and $B^0\toμ^+μ^-$ in proton-proton collisions at the LHC by the CMS and LHCb experiments. The data samples were collected in 2011 at a centre-of-mass energy of 7 TeV, and in 2012 at 8 TeV. The combined analysis produces the first observation of the $B^0_s\toμ^+μ^-$ decay, with a statistical significance exceeding six standard deviations, and the best measurement of its branching fraction so far. Furthermore, evidence for the $B^0\toμ^+μ^-$ decay is obtained with a statistical significance of three standard deviations. The branching fraction measurements are statistically compatible with SM predictions and impose stringent constraints on several theories beyond the SM. △ Less

Submitted 17 August, 2015; v1 submitted 17 November, 2014; originally announced November 2014.

Comments: Correspondence should be addressed to [email protected]

Report number: CERN-PH-EP-2014-220, CMS-BPH-13-007, LHCb-PAPER-2014-049

Journal ref: Nature 522, 68-72 (04 June 2015)

Prospects for $K^+ \to π^+ ν\bar{ ν}$ at CERN in NA62

Authors: G. Aglieri Rinella, R. Aliberti, F. Ambrosino, B. Angelucci, A. Antonelli, G. Anzivino, R. Arcidiacono, I. Azhinenko, S. Balev, J. Bendotti, A. Biagioni, C. Biino, A. Bizzeti, T. Blazek, A. Blik, B. Bloch-Devaux, V. Bolotov, V. Bonaiuto, M. Bragadireanu, D. Britton, G. Britvich, N. Brook, F. Bucci, V. Buescher, F. Butin , et al. (179 additional authors not shown)

Abstract: The NA62 experiment will begin taking data in 2015. Its primary purpose is a 10% measurement of the branching ratio of the ultrarare kaon decay $K^+ \to π^+ ν\bar{ ν}$, using the decay in flight of kaons in an unseparated beam with momentum 75 GeV/c.The detector and analysis technique are described here. The NA62 experiment will begin taking data in 2015. Its primary purpose is a 10% measurement of the branching ratio of the ultrarare kaon decay $K^+ \to π^+ ν\bar{ ν}$, using the decay in flight of kaons in an unseparated beam with momentum 75 GeV/c.The detector and analysis technique are described here. △ Less

Submitted 1 November, 2014; originally announced November 2014.

Comments: 8 pages for proceedings of 50 Years of CPV

Recent NA48/2 and NA62 results

Authors: F. Ambrosino, A. Antonelli, G. Anzivino, R. Arcidiacono, W. Baldini, S. Balev, J. R. Batley, M. Behler, S. Bifani, C. Biino, A. Bizzeti, B. Bloch-Devaux, G. Bocquet, V. Bolotov, F. Bucci, N. Cabibbo, M. Calvetti, N. Cartiglia, A. Ceccucci, P. Cenci, C. Cerri, C. Cheshkov, J. B. Cheze, M. Clemencic, G. Collazuol , et al. (134 additional authors not shown)

Abstract: The NA48/2 Collaboration at CERN has accumulated and analysed unprecedented statistics of rare kaon decays in the $K_{e4}$ modes: $K_{e4}(+-)$ ($K^\pm \to π^+ π^- e^\pm ν$) and $K_{e4}(00)$ ($K^\pm \to π^0 π^0 e^\pm ν$) with nearly one percent background contamination. It leads to the improved measurement of branching fractions and detailed form factor studies. New final results from the analysis… ▽ More The NA48/2 Collaboration at CERN has accumulated and analysed unprecedented statistics of rare kaon decays in the $K_{e4}$ modes: $K_{e4}(+-)$ ($K^\pm \to π^+ π^- e^\pm ν$) and $K_{e4}(00)$ ($K^\pm \to π^0 π^0 e^\pm ν$) with nearly one percent background contamination. It leads to the improved measurement of branching fractions and detailed form factor studies. New final results from the analysis of 381 $K^\pm \to π^\pm γγ$ rare decay candidates collected by the NA48/2 and NA62 experiments at CERN are presented. The results include a decay rate measurement and fits to Chiral Perturbation Theory (ChPT) description. △ Less

Submitted 4 August, 2014; originally announced August 2014.

Comments: Prepared for the Proceedings of "Moriond QCD and High Energy Interactions. March 22-29 2014." conference

Performance of Ultra-Fast Silicon Detectors

Authors: N. Cartiglia, M. Baselga, G. Dellacasa, S. Ely, V. Fadeyev, Z. Galloway, F. Marchetto, S. Maroiu, G. Mazza, J. Ngo, M. Obertino, C. Parker, A. Rivetti, D. Shumacher, H. F-W. Sadrozinski, A. Seiden, A. Zatserklyaniy

Abstract: The development of Low-Gain Avalanche Detectors has opened up the possibility of manufacturing silicon detectors with signal larger than that of traditional sensors. In this paper we explore the timing performance of Low-Gain Avalanche Detectors, and in particular we demonstrate the possibility of obtaining ultra-fast silicon detector with time resolution of less than 20 picosecond. The development of Low-Gain Avalanche Detectors has opened up the possibility of manufacturing silicon detectors with signal larger than that of traditional sensors. In this paper we explore the timing performance of Low-Gain Avalanche Detectors, and in particular we demonstrate the possibility of obtaining ultra-fast silicon detector with time resolution of less than 20 picosecond. △ Less

Submitted 5 December, 2013; v1 submitted 4 December, 2013; originally announced December 2013.

Comments: 10 pages, 10 figures

Summary of the Workshop on Multi-Parton Interactions (MPI@LHC 2012)

Authors: H. Abramowicz, P. Bartalini, M. Baehr, N. Cartiglia, R. Ciesielski, E. Dobson, F. Ferro, K. Goulianos, B. Guiot, X. Janssen, H. Jung, Iu. Karpenko, J. Kaspar, J. Katzy, F. Krauss, P. Laycock, E. Levin, M. Mangano, Ch. Mesropian, A. Moraes, M. Myska, D. Moran, R. Muresan, Z. Nagy, T. Pierog , et al. (12 additional authors not shown)

Abstract: With short resumes and highlights the discussions in the different working groups of the workshop MPI@LHC 2012 is documented. With short resumes and highlights the discussions in the different working groups of the workshop MPI@LHC 2012 is documented. △ Less

Submitted 29 June, 2013; v1 submitted 23 June, 2013; originally announced June 2013.

Measurement of the proton-proton total, elastic, inelastic and diffractive cross sections at 2, 7, 8 and 57 TeV

Authors: Nicolò Cartiglia

Abstract: The measurement of the total $pp$ cross section and its various sub-components (elastic, inelastic and diffractive) is a very powerful tool to understand the proton macro structure and fundamental QCD dynamics. In this contribution I first provide a theoretical introduction to the topic, then a summary of the experimental techniques and finally I review the new results from AUGER and LHC experimen… ▽ More The measurement of the total $pp$ cross section and its various sub-components (elastic, inelastic and diffractive) is a very powerful tool to understand the proton macro structure and fundamental QCD dynamics. In this contribution I first provide a theoretical introduction to the topic, then a summary of the experimental techniques and finally I review the new results from AUGER and LHC experiments. △ Less

Submitted 5 June, 2013; v1 submitted 27 May, 2013; originally announced May 2013.

Comments: 14 pages, 29 figures

Measurement of the proton-proton total cross section at 2, 7, 8 and 57 TeV

Authors: Nicolò Cartiglia

Abstract: The measurement of the total $pp$ cross section and its various sub-components (elastic, inelastic and diffractive) is a very powerful tool to understand the proton macro structure and fundamental QCD dynamics. In this contribution I first provide a theoretical introduction to the topic, then a summary of the experimental techniques and finally I review the new results from AUGER and LHC experimen… ▽ More The measurement of the total $pp$ cross section and its various sub-components (elastic, inelastic and diffractive) is a very powerful tool to understand the proton macro structure and fundamental QCD dynamics. In this contribution I first provide a theoretical introduction to the topic, then a summary of the experimental techniques and finally I review the new results from AUGER and LHC experiments. △ Less

Submitted 1 April, 2013; v1 submitted 12 March, 2013; originally announced March 2013.

Comments: Physics in Collision, Slovakia, 2012

Report number: PSNUM 06

Measurement of the branching ratio of the decay $Ξ^{0}\rightarrow Σ^{+} μ^{-} \barν_μ$

Authors: J. R. Batley, G. E. Kalmus, C. Lazzeroni, D. J. Munday, M. Patel, M. W. Slater, S. A. Wotton, R. Arcidiacono, G. Bocquet, A. Ceccucci, D. Cundy, N. Doble, V. Falaleev, L. Gatignon, A. Gonidec, P. Grafstrom, W. Kubischta, F. Marchetto, I. Mikulec, A. Norton, B. Panzer-Steindel, P. Rubin, H. Wahl, E. Goudzovski, P. Hristov , et al. (88 additional authors not shown)

Abstract: From the 2002 data taking with a neutral kaon beam extracted from the CERN-SPS, the NA48/1 experiment observed 97 $Ξ^{0}\rightarrow Σ^{+} μ^{-} \barν_μ$ candidates with a background contamination of $30.8 \pm 4.2$ events. From this sample, the BR($Ξ^{0}\rightarrow Σ^{+} μ^{-} \barν_μ$) is measured to be $(2.17 \pm 0.32_{\mathrm{stat}}\pm 0.17_{\mathrm{syst}})\times10^{-6}$. From the 2002 data taking with a neutral kaon beam extracted from the CERN-SPS, the NA48/1 experiment observed 97 $Ξ^{0}\rightarrow Σ^{+} μ^{-} \barν_μ$ candidates with a background contamination of $30.8 \pm 4.2$ events. From this sample, the BR($Ξ^{0}\rightarrow Σ^{+} μ^{-} \barν_μ$) is measured to be $(2.17 \pm 0.32_{\mathrm{stat}}\pm 0.17_{\mathrm{syst}})\times10^{-6}$. △ Less

Submitted 14 January, 2013; v1 submitted 13 December, 2012; originally announced December 2012.

Empirical parameterization of the K+- -> pi+- pi0 pi0 decay Dalitz plot

Authors: J. R. Batley, A. J. Culling, G. Kalmus, C. Lazzeroni, D. J. Munday, M. W. Slater, S. A. Wotton, R. Arcidiacono, G. Bocquet, N. Cabibbo, A. Ceccucci, D. Cundy, V. Falaleev, M. Fidecaro, L. Gatignon, A. Gonidec, W. Kubischta, A. Norton, A. Maier, M. Patel, A. Peters, S. Balev, P. L. Frabetti, E. Goudzovski, P. Hristov , et al. (96 additional authors not shown)

Abstract: As first observed by the NA48/2 experiment at the CERN SPS, the $\p0p0$ invariant mass (M00) distribution from $\kcnn$ decay shows a cusp-like anomaly at M00=2m+, where m+ is the charged pion mass. An analysis to extract the pi pi scattering lengths in the isospin I=0 and I=2 states, a0 and a2, respectively, has been recently reported. In the present work the Dalitz plot of this decay is fitted to… ▽ More As first observed by the NA48/2 experiment at the CERN SPS, the $\p0p0$ invariant mass (M00) distribution from $\kcnn$ decay shows a cusp-like anomaly at M00=2m+, where m+ is the charged pion mass. An analysis to extract the pi pi scattering lengths in the isospin I=0 and I=2 states, a0 and a2, respectively, has been recently reported. In the present work the Dalitz plot of this decay is fitted to a new empirical parameterization suitable for practical purposes, such as Monte Carlo simulations of K+- -> pi+- pi0 pi0 decays. △ Less

Submitted 7 April, 2010; originally announced April 2010.

Comments: 9 pages, 3 figures.

Journal ref: Phys.Lett. B686:101-108,2010

Radiation hardness qualification of PbWO4 scintillation crystals for the CMS Electromagnetic Calorimeter

Authors: The CMS Electromagnetic Calorimeter Group, P. Adzic, N. Almeida, D. Andelin, I. Anicin, Z. Antunovic, R. Arcidiacono, M. W. Arenton, E. Auffray, S. Argiro, A. Askew, S. Baccaro, S. Baffioni, M. Balazs, D. Bandurin, D. Barney, L. M. Barone, A. Bartoloni, C. Baty, S. Beauceron, K. W. Bell, C. Bernet, M. Besancon, B. Betev, R. Beuselinck , et al. (245 additional authors not shown)

Abstract: Ensuring the radiation hardness of PbWO4 crystals was one of the main priorities during the construction of the electromagnetic calorimeter of the CMS experiment at CERN. The production on an industrial scale of radiation hard crystals and their certification over a period of several years represented a difficult challenge both for CMS and for the crystal suppliers. The present article reviews t… ▽ More Ensuring the radiation hardness of PbWO4 crystals was one of the main priorities during the construction of the electromagnetic calorimeter of the CMS experiment at CERN. The production on an industrial scale of radiation hard crystals and their certification over a period of several years represented a difficult challenge both for CMS and for the crystal suppliers. The present article reviews the related scientific and technological problems encountered. △ Less

Submitted 21 December, 2009; originally announced December 2009.

Comments: 24 pages, 19 figures, available on CMS information server at http://cms.cern.ch/iCMS/

Report number: CMS Note 2009/016

Journal ref: JINST 5:P03010,2010

Search for CP-Violation in KS -> 3pi0 decays with the NA48 detector

Authors: Nicolò Cartiglia

Abstract: The decay KS -> 3pi0 is forbidden by CP conservation. Using a sample of more than 6 million K -> 3pi0 decays, the NA48 Collaboration has improved the limit on eta_{000} = A(KS -> 3pi0)/A(KS -> 3pi0) and on the branching ratio Br(KS -> 3pi0) by about one order of magnitude. Using this result and the Bell-Steinberger relation, a new limit on the equality of the K0 and K0bar masses is obtained impr… ▽ More The decay KS -> 3pi0 is forbidden by CP conservation. Using a sample of more than 6 million K -> 3pi0 decays, the NA48 Collaboration has improved the limit on eta_{000} = A(KS -> 3pi0)/A(KS -> 3pi0) and on the branching ratio Br(KS -> 3pi0) by about one order of magnitude. Using this result and the Bell-Steinberger relation, a new limit on the equality of the K0 and K0bar masses is obtained improving by about 40% the test of CPT conservation in the mixing of neutral kaons. △ Less

Submitted 13 October, 2003; originally announced October 2003.

Journal ref: Eur.Phys.J.C33:s337-339,2004

Top Quark Physics

Authors: M. Beneke, I. Efthymiopoulos, M. L. Mangano, J. Womersley, A. Ahmadov, G. Azuelos, U. Baur, A. Belyaev, E. L. Berger, W. Bernreuther, E. E. Boos, M. Bosman, A. Brandenburg, R. Brock, M. Buice, N. Cartiglia, F. Cerutti, A. Cheplakov, L. Chikovani, M. Cobal-Grassmann, G. Corcella, F. del Aguila, T. Djobava, J. Dodd, V. Drollinger , et al. (53 additional authors not shown)

Abstract: We review the prospects for studies of the top quark at the LHC. We review the prospects for studies of the top quark at the LHC. △ Less

Submitted 4 March, 2000; originally announced March 2000.

Comments: 111 pages, Latex, to appear in the Report of the ``1999 CERN Workshop on SM physics (and more) at the LHC'', M.Beneke, I.Efthymiopoulos, M.L.Mangano, J.Womersley (conveners)

Report number: CERN-TH/2000-100