Showing 1–50 of 50 results for author: Carroll, M S

Subsystem surface and compass code sensitivities to non-identical infidelity distributions on heavy-hex lattice

Authors: Malcolm S. Carroll, James R. Wootton, Andrew W. Cross

Abstract: Logical qubits encoded into a quantum code exhibit improved error rates when the physical error rates are sufficiently low, below the pseudothreshold. Logical error rates and pseudothresholds can be estimated for specific circuits and noise models, and these estimates provide approximate goals for qubit performance. However, estimates often assume uniform error rates, while real devices have stati… ▽ More Logical qubits encoded into a quantum code exhibit improved error rates when the physical error rates are sufficiently low, below the pseudothreshold. Logical error rates and pseudothresholds can be estimated for specific circuits and noise models, and these estimates provide approximate goals for qubit performance. However, estimates often assume uniform error rates, while real devices have static and/or dynamic distributions of non-identical error rates and may exhibit outliers. These distributions make it more challenging to evaluate, compare, and rank the expected performance of quantum processors. We numerically investigate how the logical error rate depends on parameters of the noise distribution for the subsystem surface code and the compass code on a subdivided hexagonal lattice. Three notable observations are found: (1) the average logical error rate depends on the average of the physical qubit infidelity distribution without sensitivity to higher moments (e.g., variance or outliers) for a wide parameter range; (2) the logical error rate saturates as errors increase at one or a few "bad" locations; and (3) a decoder that is aware of location specific error rates modestly improves the logical error rate. We discuss the implications of these results in the context of several different practical sources of outliers and non-uniform qubit error rates. △ Less

Submitted 12 February, 2024; originally announced February 2024.

Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing

Authors: Quinn Campbell, Justine C. Koepke, Jeffrey A. Ivie, Andrew M. Mounce, Daniel R. Ward, Malcolm S. Carroll, Shashank Misra, Andrew D. Baczewski, Ezra Bussmann

Abstract: Atomic-precision advanced manufacturing enables the placement of dopant atoms within $\pm$1 lattice site in crystalline Si. However, it has recently been shown that reaction kinetics can introduce uncertainty in whether a single donor will incorporate at all in a minimal 3-dimer lithographic window. In this work, we explore the combined impact of lithographic variation and stochastic kinetics on P… ▽ More Atomic-precision advanced manufacturing enables the placement of dopant atoms within $\pm$1 lattice site in crystalline Si. However, it has recently been shown that reaction kinetics can introduce uncertainty in whether a single donor will incorporate at all in a minimal 3-dimer lithographic window. In this work, we explore the combined impact of lithographic variation and stochastic kinetics on P incorporation as the size of such a window is increased. We augment a kinetic model for PH$_3$ dissociation leading to P incorporation on Si(100)-2$\times$1 to include barriers for reactions across distinct dimer rows. Using this model, we demonstrate that even for a window consisting of 2$\times$3 silicon dimers, the probability that at least one donor incorporates is nearly unity. We also examine the impact of size of the lithographic window, finding that the incorporation fraction saturates to $δ$-layer like coverage as the circumference-to-area ratio approaches zero. We predict that this incorporation fraction depends strongly on the dosage of the precursor, and that the standard deviation of the number of incorporations scales as $\sim \sqrt{n}$, as would be expected for a series of largely independent incorporation events. Finally, we characterize an array of experimentally prepared multi-donor lithographic windows and use our kinetic model to study variability due to the observed lithographic roughness, predicting a negligible impact on incorporation statistics. We find good agreement between our model and the inferred incorporation in these windows from scanning tunneling microscope measurements, indicating the robustness of atomic-precision advanced manufacturing to errors in patterning for multi-donor patches. △ Less

Submitted 21 July, 2022; originally announced July 2022.

Comments: Main text 24 pages, 5 figures + Appendecies 8 pages, 3 figures

The impact of stochastic incorporation on atomic-precision Si:P arrays

Authors: Jeffrey A. Ivie, Quinn Campbell, Justin C. Koepke, Mitchell I. Brickson, Peter A. Schultz, Richard P. Muller, Andrew M. Mounce, Daniel R. Ward, Malcom S. Carroll, Ezra Bussmann, Andrew D. Baczewski, Shashank Misra

Abstract: Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within $\sim$1 nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorpor… ▽ More Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within $\sim$1 nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorporate into a single lithographic window is manifestly uncertain. We present experimental results indicating that the likelihood of incorporating into an ideally written three-dimer single-donor window is $63 \pm 10\%$ for room-temperature dosing, and corroborate these results with a model for the incorporation kinetics. Nevertheless, further analysis of this model suggests conditions that might raise the incorporation rate to near-deterministic levels. We simulate bias spectroscopy on a chain of comparable dimensions to the array in our yield study, indicating that such an experiment may help confirm the inferred incorporation rate. △ Less

Submitted 25 May, 2021; originally announced May 2021.

Comments: 20 pages, 13 figures

Journal ref: Phys. Rev. Applied 16, 054037 (2021)

A silicon singlet-triplet qubit driven by spin-valley coupling

Authors: Ryan M. Jock, N. Tobias Jacobson, Martin Rudolph, Daniel R. Ward, Malcolm S. Carroll, Dwight R. Luhman

Abstract: Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here, we demonstrate a novel singlet-triplet qubit operating mode that can drive qubit evolution at frequencies in excess of 200 MHz. This approach offers… ▽ More Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here, we demonstrate a novel singlet-triplet qubit operating mode that can drive qubit evolution at frequencies in excess of 200 MHz. This approach offers a means to electrically turn on and off fast control, while providing high logic gate orthogonality and long qubit dephasing times. We utilize this operational mode for dynamical decoupling experiments to probe the charge noise power spectrum in a silicon metal-oxide-semiconductor double quantum dot. In addition, we assess qubit frequency drift over longer timescales to capture low-frequency noise. We present the charge noise power spectral density up to 3 MHz, which exhibits a $1/f^α$ dependence consistent with $α\sim 0.7$, over 9 orders of magnitude in noise frequency. △ Less

Submitted 11 November, 2021; v1 submitted 24 February, 2021; originally announced February 2021.

Comments: Supplementary information included with the paper

Journal ref: Nature Communications 13, 641 (2022)

Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures

Authors: M. J. Curry, M. Rudolph, T. D. England, A. M. Mounce, R. M. Jock, C. Bureau-Oxton, P. Harvey-Collard, P. A. Sharma, J. M. Anderson, D. M. Campbell, J. R. Wendt, D. R. Ward, S. M. Carr, M. P. Lilly, M. S. Carroll

Abstract: High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance o… ▽ More High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). Both circuits are mounted on the mixing-chamber stage of a dilution refrigerator and are connected to silicon metal oxide semiconductor (Si-MOS) quantum dot devices on a printed circuit board (PCB). The power dissipated by the CB-HBT ranges from 0.1 to 1 μW whereas the power of the AC-HBT ranges from 1 to 20 μW. Referred to the input, the noise spectral density is low for both circuits, in the 15 to 30 fA/$\sqrt{\textrm{Hz}}$ range. The charge sensitivity for the CB-HBT and AC-HBT is 330 μe/$\sqrt{\textrm{Hz}}$ and 400 μe/$\sqrt{\textrm{Hz}}$, respectively. For the single-shot readout performed, less than 10 μs is required for both circuits to achieve bit error rates below $10^{-3}$, which is a putative threshold for quantum error correction. △ Less

Submitted 14 January, 2019; originally announced January 2019.

Comments: 11 pages, 13 figures

Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon

Authors: Patrick Harvey-Collard, N. Tobias Jacobson, Chloé Bureau-Oxton, Ryan M. Jock, Vanita Srinivasa, Andrew M. Mounce, Daniel R. Ward, John M. Anderson, Ronald P. Manginell, Joel R. Wendt, Tammy Pluym, Michael P. Lilly, Dwight R. Luhman, Michel Pioro-Ladrière, Malcolm S. Carroll

Abstract: Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the s… ▽ More Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates. △ Less

Submitted 11 June, 2019; v1 submitted 22 August, 2018; originally announced August 2018.

Journal ref: Phys. Rev. Lett. 122, 217702 (2019)

All-electrical universal control of a double quantum dot qubit in silicon MOS

Authors: Patrick Harvey-Collard, Ryan M. Jock, N. Tobias Jacobson, Andrew D. Baczewski, Andrew M. Mounce, Matthew J. Curry, Daniel R. Ward, John M. Anderson, Ronald P. Manginell, Joel R. Wendt, Martin Rudolph, Tammy Pluym, Michael P. Lilly, Michel Pioro-Ladrière, Malcolm S. Carroll

Abstract: Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot rea… ▽ More Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS. △ Less

Submitted 6 February, 2018; originally announced February 2018.

Comments: The conference proceedings version incorrectly displays the orientation of the magnetic field in figure 1; this version is correct

Journal ref: in 2017 IEEE International Electron Devices Meeting (IEDM) (2017) pp. 36.5.1-36.5.4

Ion Implantation for Deterministic Single Atom Devices

Authors: J. L. Pacheco, M. Singh, D. L. Perry, J. R. Wendt, G. Ten Eyck, R. P. Manginell, T. Pluym, D. R. Luhman, M. P. Lilly, M. S. Carroll, E. Bielejec

Abstract: We demonstrate a capability of deterministic do** at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom device… ▽ More We demonstrate a capability of deterministic do** at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond. △ Less

Submitted 2 November, 2017; originally announced November 2017.

Atomic-layer do** of SiGe heterostructures for atomic-precision donor devices

Authors: E. Bussmann, John King Gamble, J. C. Koepke, D. Laroche, S. H. Huang, Y. Chuang, J. -Y. Li, C. W. Liu, B. S. Swartzentruber, M. P. Lilly, M. S. Carroll, T. -M. Lu

Abstract: As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer do** of SiGe heterostructures. To preserve the substrate structure and elastic state, we use a T $\leq 800^\circ$C process to prepare clean Si$_{0.86}$Ge$_{0.14}$ surfaces suitable for atomic-precision fabrication. P-saturated… ▽ More As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer do** of SiGe heterostructures. To preserve the substrate structure and elastic state, we use a T $\leq 800^\circ$C process to prepare clean Si$_{0.86}$Ge$_{0.14}$ surfaces suitable for atomic-precision fabrication. P-saturated atomic-layer do** is incorporated and capped with epitaxial Si under a thermal budget compatible with atomic-precision fabrication. Hall measurements at T$=0.3$ K show that the doped heterostructure has R$_{\square}=570\pm30$ $Ω$, yielding an electron density $n_{e}=2.1\pm0.1\times10^{14}$cm$^{-2}$ and mobility $μ_e=52\pm3$ cm$^{2}$ V$^{-1}$ s$^{-1}$, similar to saturated atomic-layer do** in pure Si and Ge. The magnitude of $μ_e$ and the complete absence of Shubnikov-de Haas oscillations in magnetotransport measurements indicate that electrons are overwhelmingly localized in the donor layer, and not within a nearby buried Si well. This conclusion is supported by self-consistent Schrödinger-Poisson calculations that predict electron occupation primarily in the donor layer. △ Less

Submitted 17 October, 2017; originally announced October 2017.

Comments: 7 pages, 6 figures, to be submitted to Physical Review Materials. This work has been supported by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy (DOE). This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science

Journal ref: Phys. Rev. Materials 2, 066004 (2018)

Probing low noise at the MOS interface with a spin-orbit qubit

Authors: Ryan M. Jock, N. Tobias Jacobson, Patrick Harvey-Collard, Andrew M. Mounce, Vanita Srinivasa, Dan R. Ward, John Anderson, Ron Manginell, Joel R. Wendt, Martin Rudolph, Tammy Pluym, John King Gamble, Andrew D. Baczewski, Wayne M. Witzel, Malcolm S. Carroll

Abstract: The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns hav… ▽ More The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet-triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 $μ$s using 99.95% $^{28}$Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise. △ Less

Submitted 13 July, 2017; originally announced July 2017.

Comments: Submitted July 13, 2017. Supplementary information included with the paper

Journal ref: Nature Communications 9, 1768 (2018)

Quantum dots with split enhancement gate tunnel barrier control

Authors: S. Rochette, M. Rudolph, A. -M. Roy, M. Curry, G. Ten Eyck, R. Manginell, J. Wendt, T. Pluym, S. M. Carr, D. Ward, M. P. Lilly, M. S. Carroll, M. Pioro-Ladrière

Abstract: We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attai… ▽ More We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attainable while maintaining single-electron occupation. A characteristic change in slope of the charge transitions as a function of the reservoir gate voltage, attributed to screening from charges in the reservoir, is observed in all devices, and is expected to play a role in the sizable tuning orthogonality of the split enhancement gate structure. The all-silicon process is expected to minimize strain gradients from electrode thermal mismatch, while the single gate layer should avoid issues related to overlayers (e.g., additional dielectric charge noise) and help improve yield. Finally, reservoir gate control of the tunnel barrier has implications for initialization, manipulation and readout schemes in multi-quantum dot architectures. △ Less

Submitted 5 March, 2019; v1 submitted 12 July, 2017; originally announced July 2017.

Comments: v1: 11 pages, 3 extended data tables, 1 extended data figure, v2: 5 pages, 3 figures, 5 pages supplementary material, 3 extended data tables, 2 extended data figures. Reorganization of the paper structure, modification of the title, abstract and introduction and conclusion, no change to the results and main text figures

Journal ref: Appl. Phys. Lett. 114, 083101 (2019)

Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy

Authors: E. N. Yitamben, R. E. Butera, B. S. Swartzentruber, R. J. Simonson, S. Misra, M. S. Carroll, E. Bussmann

Abstract: Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2D adatom islanding to step-flow growth, systematic controlled air leaks into the growth chamber induce pits in the growth surface. We show that pits are also correlated with oxygen-contaminated flux from Si sublimation s… ▽ More Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2D adatom islanding to step-flow growth, systematic controlled air leaks into the growth chamber induce pits in the growth surface. We show that pits are also correlated with oxygen-contaminated flux from Si sublimation sources. From a thermodynamic standpoint, multilayer growth pits are unexpected in relaxed homoepitaxial growth, whereas oxidation is a known cause for step pinning, roughening, and faceting on elemental surfaces, both with and without growth flux. Not surprisingly, pits are thermodynamically metastable and heal by annealing to recover a smooth periodic step arrangement. STM reveals new details about the pits' atomistic origins and growth dynamics. We give a model for heterogeneous nucleation of pits by preferential adsorption of Å-sized oxide nuclei at intrinsic growth antiphase boundaries, and subsequent step pinning and bunching around the nuclei. △ Less

Submitted 15 June, 2017; originally announced June 2017.

Comments: 9 pages, 5 figures

Coupling MOS Quantum Dot and Phosphorus Donor Qubit Systems

Authors: M. Rudolph, P. Harvey-Collard, R. Jock, N. T. Jacobson, J. Wendt, T. Pluym, J. Dominguez, G. Ten-Eyck, R. Manginell, M. P. Lilly, M. S. Carroll

Abstract: Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin qubit that evolves under the QD-donor exchange interaction and the hyperfine interact… ▽ More Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe. △ Less

Submitted 16 May, 2017; originally announced May 2017.

Journal ref: in 2016 IEEE International Electron Devices Meeting (IEDM) (2016) pp. 34.1.1-34.1.4

Spectroscopy of multi-electrode tunnel barriers

Authors: A. Shirkhorshidian, John King Gamble, L. Maurer, S. M. Carr, J. Dominguez, G. A. Ten Eyck, J. R. Wendt, E. Nielsen, N. T. Jacobson, M. P. Lilly, M. S. Carroll

Abstract: Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is the precise regime into which current, extreme-scale electronics fall. Here, we propose theoretically and validate experimentally a compact model for multi-elec… ▽ More Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is the precise regime into which current, extreme-scale electronics fall. Here, we propose theoretically and validate experimentally a compact model for multi-electrode tunnel barriers, suitable for design-rules-based engineering of tunnel junctions in quantum devices. We perform transport spectroscopy at $T=4$ K, extracting effective barrier heights and widths for a wide range of biases, using an efficient Landauer-Büttiker tunneling model to perform the analysis. We find that the barrier height shows several regimes of voltage dependence, either linear or approximately exponential. The exponential dependence approximately correlates with the formation of an electron channel below an electrode. Effects on transport threshold, such as metal-insulator-transition and lateral confinement are non-negligible and included. We compare these results to semi-classical solutions of Poisson's equation and find them to agree qualitatively. Finally, we characterize the sensitivity of a tunnel barrier that is raised or lowered without an electrode being directly above the barrier region. △ Less

Submitted 4 May, 2017; v1 submitted 2 May, 2017; originally announced May 2017.

Comments: 13 pages, 9 figures; removed comments from TeX source file, paper unchanged

Journal ref: Phys. Rev. Applied 10, 044003 (2018)

High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism

Authors: Patrick Harvey-Collard, Benjamin D'Anjou, Martin Rudolph, N. Tobias Jacobson, Jason Dominguez, Gregory A. Ten Eyck, Joel R. Wendt, Tammy Pluym, Michael P. Lilly, William A. Coish, Michel Pioro-Ladrière, Malcolm S. Carroll

Abstract: The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge map** processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readou… ▽ More The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge map** processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readout. We achieve average single-shot readout fidelities > 99.3% and > 99.86% for the conventional and enhanced readout respectively, the latter being the highest to date for spin blockade. The signal amplitude is enhanced to a full one-electron signal while preserving the readout speed. Furthermore, layout constraints are relaxed because the charge sensor signal is no longer dependent on being aligned with the conventional (2, 0) - (1, 1) charge dipole. Silicon donor-quantum-dot qubits are used for this study, for which the dipole insensitivity substantially relaxes donor placement requirements. One of the readout variations also benefits from a parametric lifetime enhancement by replacing the spin-relaxation process with a charge-metastable one. This provides opportunities to further increase the fidelity. The relaxation mechanisms in the different regimes are investigated. This work demonstrates a readout that is fast, has one-electron signal and results in higher fidelity. It further predicts that going beyond 99.9% fidelity in a few microseconds of measurement time is within reach. △ Less

Submitted 31 January, 2018; v1 submitted 7 March, 2017; originally announced March 2017.

Comments: Supplementary information is included with the paper

Journal ref: Phys. Rev. X 8, 021046 (2018)

Valley splitting of single-electron Si MOS quantum dots

Authors: John King Gamble, Patrick Harvey-Collard, N. Tobias Jacobson, Andrew D. Baczewski, Erik Nielsen, Leon Maurer, Inès Montaño, Martin Rudolph, M. S. Carroll, C. H. Yang, A. Rossi, A. S. Dzurak, Richard P. Muller

Abstract: Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory rem… ▽ More Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from a new experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both the new experiment and a recently reported one. Through sampling millions of realistic cases of interface roughness, our method provides evidence that, despite radically different processing, the valley physics between the two samples is essentially the same. This work provides the first evidence that valley splitting can be deterministically predicted and controlled in metal oxide semiconductor quantum dots, a critical requirement for such systems to realize a reliable qubit platform. △ Less

Submitted 11 October, 2016; originally announced October 2016.

Comments: 7 pages, 4 figures

Journal ref: Applied Physics Letters 109, 253101 (2016)

Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer

Authors: T. M. Lu, J. K. Gamble, R. P. Muller, E. Nielsen, D. Bethke, G. A. Ten Eyck, T. Pluym, J. R. Wendt, J. Dominguez, M. P. Lilly, M. S. Carroll, M. C. Wanke

Abstract: Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30\%. Here we report the fabrication and low-temperature characterization of quantum dots in Si/Si$_{0.8}$Ge$_{0.2}$ heteros… ▽ More Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30\%. Here we report the fabrication and low-temperature characterization of quantum dots in Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 $μ$m increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. The device uses only a single metal-gate layer, greatly simplifying device design and fabrication. △ Less

Submitted 29 August, 2016; originally announced August 2016.

Silicon Quantum Dots with Counted Antimony Donor Implants

Authors: M. Singh, J. L. Pacheco, D. Perry, E. Garratt, G. Ten Eyck, N. C. Bishop, J. R. Wendt, R. P. Manginell, J. Dominguez, T. Pluym, D. R. Luhman, E. Bielejec, M. P. Lilly, M. S. Carroll

Abstract: Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In… ▽ More Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants. △ Less

Submitted 14 December, 2015; originally announced December 2015.

Coherent coupling between a quantum dot and a donor in silicon

Authors: Patrick Harvey-Collard, N. Tobias Jacobson, Martin Rudolph, Jason Dominguez, Gregory A. Ten Eyck, Joel R. Wendt, Tammy Pluym, John King Gamble, Michael P. Lilly, Michel Pioro-Ladrière, Malcolm S. Carroll

Abstract: Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of… ▽ More Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a $^{31}$P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show that the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit. △ Less

Submitted 18 October, 2017; v1 submitted 4 December, 2015; originally announced December 2015.

Comments: Published version

Journal ref: Nature Communications 8, 1029 (2017)

Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor

Authors: M. J. Curry, T. D. England, N. C. Bishop, G. Ten-Eyck, J. R. Wendt, T. Pluym, M. P. Lilly, S. M. Carr, M. S. Carroll

Abstract: We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signa… ▽ More We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10-100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out. △ Less

Submitted 28 September, 2015; originally announced September 2015.

Comments: Reprinted with permission from M. J. Curry, et alii. Copyright 2015, AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the AIP Publishing LLC. 5 pages, 4 figures

Journal ref: App. Phys. Lett. 106, 203505 (2015)

Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants

Authors: A. Shirkhorshidian, N. C. Bishop, J. Dominguez, R. K. Grubbs, J. R. Wendt, M. P. Lilly, M. S. Carroll

Abstract: We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted device has resonances superposed on the point contact transport indicative of transport through the Sb donors. We fit the differential conductance to a r… ▽ More We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted device has resonances superposed on the point contact transport indicative of transport through the Sb donors. We fit the differential conductance to a rectangular tunnel barrier model with a linear barrier height dependence on source-drain voltage and non-linear dependence on gate bias. Effects such as Fowler-Nordheim (FN) tunneling and image charge barrier lowering (ICBL) are considered. Barrier heights and widths are estimated for the entire range of relevant biases. The barrier heights at the locations of some of the resonances for the implanted tunnel barrier are between 15-20 meV, which are consistent with transport through shallow partially hybridized Sb donors. The dependence of width and barrier height on gate voltage is found to be linear over a wide range of gate bias in the split gate geometry but deviates considerably when the barrier becomes large and is not described completely by standard 1D models such as FN or ICBL effects. △ Less

Submitted 14 January, 2015; originally announced January 2015.

Comments: 9 pages, 3 figures

Imaging and registration of buried atomic-precision donor devices using scanning capacitance microscopy

Authors: E. Bussmann, M. Rudolph, G. S. Subramania, S. Misra, S. M. Carr, E. Langlois, J. Dominguez, T. Pluym, M. P. Lilly, M. S. Carroll

Abstract: We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical challenge in completing atomic-precision nanoelectronic devices is to accurately align mesoscopic metal contacts to the STM defined nanostructures. Utilizing the SCMs a… ▽ More We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical challenge in completing atomic-precision nanoelectronic devices is to accurately align mesoscopic metal contacts to the STM defined nanostructures. Utilizing the SCMs ability to image buried dopant nanostructures, we have developed a technique by which we are able to position metal electrodes on the surface to form contacts to underlying STM fabricated donor nanostructures with a measured accuracy of 300 nm. Low temperature (T=4K) transport measurements confirm successful placement of the contacts to the donor nanostructures. △ Less

Submitted 17 October, 2014; originally announced October 2014.

Comments: The first two listed authors contributed equally to this work

Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon

Authors: Wayne M. Witzel, Inès Montaño, Richard P. Muller, Malcolm S. Carroll

Abstract: We present a strategy for producing multi-qubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. To avoid degenerate states and maximize the benefit of the gap protection, the scheme is best suited when there are two different kinds of qubits (not mutually resonant… ▽ More We present a strategy for producing multi-qubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. To avoid degenerate states and maximize the benefit of the gap protection, the scheme is best suited when there are two different kinds of qubits (not mutually resonant). Furthermore, we require a robust operating point in control space where the qubits interact with little sensitivity to noise. This allows us to circumvent a No-Go theorem that prevents block-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)]. We show how to apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. This system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron spin preparation and measurement has also been demonstrated. Putting this all together, we present a robust universal gate set for quantum computation. △ Less

Submitted 22 October, 2015; v1 submitted 8 October, 2014; originally announced October 2014.

Comments: Added noise sensitivity figures (matching published version)

Journal ref: Phys. Rev. B 92, 081407(R) (2015)

Probing limits of STM field emission patterned Si:P $δ$-doped devices

Authors: M. Rudolph, S. M. Carr, G. Subramania, G. Ten Eyck, J. Dominguez, T. Pluym, M. P. Lilly, M. S. Carroll, E. Bussmann

Abstract: Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in precision, achieved by operating the STM in the conventional tunneling mode, typically utilizes very slow ($\sim\!10^2~\mathrm{nm^2/s}$) patterning speeds. By contrast, using the STM in a high voltage ($>10~\mathrm{V}$)… ▽ More Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in precision, achieved by operating the STM in the conventional tunneling mode, typically utilizes very slow ($\sim\!10^2~\mathrm{nm^2/s}$) patterning speeds. By contrast, using the STM in a high voltage ($>10~\mathrm{V}$) field emission mode, patterning speeds can be increased by orders of magnitude to $\gtrsim\!10^4~\mathrm{nm^2/s}$. We show that the rapid patterning negligibly affects the functionality of relatively large micron-sized features, which act as contacting pads on these devices. For nanoscale structures, we show that the resulting transport is consistent with the donor incorporation chemistry enhancing the device definition to a scale of $10~\mathrm{nm}$ even though the pattering spot size is $40~\mathrm{nm}$. △ Less

Submitted 4 August, 2014; originally announced August 2014.

Efficient self-consistent quantum transport simulator for quantum devices

Authors: Xujiao Gao, Denis Mamaluy, Erik Nielsen, Ralph W. Young, Amir Shirkhorshidian, Michael P. Lilly, Nathan C. Bishop, Malcolm S. Carroll, Richard P. Muller

Abstract: We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulation of 1D quantum devices. Applying the general CBR approach to 1D open systems results in a set of very simple equations that are derived and given in detail for the first time. The charge self-consistency of the coupled… ▽ More We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulation of 1D quantum devices. Applying the general CBR approach to 1D open systems results in a set of very simple equations that are derived and given in detail for the first time. The charge self-consistency of the coupled CBR-Poisson equations is achieved by using the predictor-corrector iteration scheme with the optional Anderson acceleration. In addition, we introduce a new way to convert an equilibrium electrostatic barrier potential calculated from an external simulator to an effective do** profile, which is then used by the CBR-Poisson code for transport simulation of the barrier under non-zero biases. The code has been applied to simulate the quantum transport in a double barrier structure and across a tunnel barrier in a silicon double quantum dot. Extremely fast self-consistent 1D simulations of the differential conductance across a tunnel barrier in the quantum dot show better qualitative agreement with experiment than non-self-consistent simulations. △ Less

Submitted 28 March, 2014; originally announced March 2014.

QCAD Simulation and Optimization of Semiconductor Quantum Dots

Authors: Xujiao Gao, Erik Nielsen, Richard P. Muller, Ralph W. Young, Andrew G. Salinger, Nathan C. Bishop, Michael P. Lilly, Malcolm S. Carroll

Abstract: We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling multi-dimensional quantum devices, particularly silicon multi-quantum dots (QDs) developed for quantum bits (qubits). This finite-element simulator has three differentiating features: (i) its core contains nonlinear Poisson, effective mass Schrodinger, and Configuration Interaction solvers that have massively paral… ▽ More We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling multi-dimensional quantum devices, particularly silicon multi-quantum dots (QDs) developed for quantum bits (qubits). This finite-element simulator has three differentiating features: (i) its core contains nonlinear Poisson, effective mass Schrodinger, and Configuration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; and (iii) it interfaces directly with the full-featured optimization engine Dakota. In this work, we describe the capabilities and implementation of the QCAD simulation tool, and show how it can be used to both analyze existing experimental QD devices through capacitance calculations, and aid in the design of few-electron multi-QDs. In particular, we observe that computed capacitances are in rough agreement with experiment, and that quantum confinement increases capacitance when the number of electrons is fixed in a quantum dot. Coupling of QCAD with the optimizer Dakota allows for rapid identification and improvement of device layouts that are likely to exhibit few-electron quantum dot characteristics. △ Less

Submitted 28 March, 2014; originally announced March 2014.

Journal ref: Journal of Applied Physics, 114, 164302 (2013)

Spontaneous emission in a silicon charge qubit

Authors: Khoi T. Nguyen, N. Tobias Jacobson, Michael P. Lilly, Nathaniel C. Bishop, Erik Nielsen, Joel R. Wendt, J. Dominguez, T. Pluym, Malcolm S. Carroll

Abstract: The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double quantum dot (DQD) charge qubit through sensing the charge state's response to non-adiabatic driving of its excited state population. The charge distribution is sens… ▽ More The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double quantum dot (DQD) charge qubit through sensing the charge state's response to non-adiabatic driving of its excited state population. The charge distribution is sensed remotely in the weak measurement regime. We extract emission rates down to kHz frequencies by measuring the variation of the non-equilibrium charge occupancy as a function of amplitude and dwell times between non-adiabatic pulses. Our measurement of the energy-dependent relaxation rate provides a fingerprint of the relaxation mechanism, indicating that relaxation rates for this Si MOS DQD are consistent with coupling to deformation acoustic phonons. △ Less

Submitted 14 March, 2014; originally announced March 2014.

Comments: 5 pages, 4 figures, and Supplementary Information

Hierarchical Evidence Accumulation in the Pseiki System and Experiments in Model-Driven Mobile Robot Navigation

Authors: A. C. Kak, K. M. Andress, C. Lopez-Abadia, M. S. Carroll, J. R. Lewis

Abstract: In this paper, we will review the process of evidence accumulation in the PSEIKI system for expectation-driven interpretation of images of 3-D scenes. Expectations are presented to PSEIKI as a geometrical hierarchy of abstractions. PSEIKI's job is then to construct abstraction hierarchies in the perceived image taking cues from the abstraction hierarchies in the expectations. The Dempster-Shafe… ▽ More In this paper, we will review the process of evidence accumulation in the PSEIKI system for expectation-driven interpretation of images of 3-D scenes. Expectations are presented to PSEIKI as a geometrical hierarchy of abstractions. PSEIKI's job is then to construct abstraction hierarchies in the perceived image taking cues from the abstraction hierarchies in the expectations. The Dempster-Shafer formalism is used for associating belief values with the different possible labels for the constructed abstractions in the perceived image. This system has been used successfully for autonomous navigation of a mobile robot in indoor environments. △ Less

Submitted 27 March, 2013; originally announced April 2013.

Comments: Appears in Proceedings of the Fifth Conference on Uncertainty in Artificial Intelligence (UAI1989)

Report number: UAI-P-1989-PG-194-207

Quantum Decoherence of the Central Spin in a Sparse System of Dipolar Coupled Spins

Authors: Wayne M. Witzel, Malcolm S. Carroll, Lukasz Cywinski, S. Das Sarma

Abstract: The central spin decoherence problem has been researched for over 50 years in the context of both nuclear magnetic resonance and electron spin resonance. Until recently, theoretical models have employed phenomenological stochastic descriptions of the bath-induced noise. During the last few years, cluster expansion methods have provided a microscopic, quantum theory to study the spectral diffusion… ▽ More The central spin decoherence problem has been researched for over 50 years in the context of both nuclear magnetic resonance and electron spin resonance. Until recently, theoretical models have employed phenomenological stochastic descriptions of the bath-induced noise. During the last few years, cluster expansion methods have provided a microscopic, quantum theory to study the spectral diffusion of a central spin. These methods have proven to be very accurate and efficient for problems of nuclear-induced electron spin decoherence in which hyperfine interactions with the central electron spin are much stronger than dipolar interactions among the nuclei. We provide an in-depth study of central spin decoherence for a canonical scale-invariant all-dipolar spin system. We show how cluster methods may be adapted to treat this problem in which central and bath spin interactions are of comparable strength. Our extensive numerical work shows that a properly modified cluster theory is convergent for this problem even as simple perturbative arguments begin to break down. By treating clusters in the presence of energy detunings due to the long-range (diagonal) dipolar interactions of the surrounding environment and carefully averaging the effects over different spin states, we find that the nontrivial flip-flop dynamics among the spins becomes effectively localized by disorder in the energy splittings of the spins. This localization effect allows for a robust calculation of the spin echo signal in a dipolarly coupled bath of spins of the same kind, while considering clusters of no more than 6 spins. We connect these microscopic calculation results to the existing stochastic models. We, furthermore, present calculations for a series of related problems of interest for candidate solid state quantum bits including donors and quantum dots in silicon as well as nitrogen-vacancy centers in diamond. △ Less

Submitted 2 August, 2012; v1 submitted 12 April, 2012; originally announced April 2012.

Comments: 25 pages, 26 figures

Journal ref: Phys. Rev. B 86, 035452 (2012)

Voltage controlled exchange energies of a two electron silicon double quantum dot with and without charge defects in the dielectric

Authors: Rajib Rahman, Erik Nielsen, Richard P. Muller, Malcolm S. Carroll

Abstract: Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double quantum dots (DQD) represents a system that is very sensitive to charge position and is of interest for quantum computing. We calculate the energy spectrum of… ▽ More Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double quantum dots (DQD) represents a system that is very sensitive to charge position and is of interest for quantum computing. We calculate the energy spectrum of the silicon double quantum dot system using a full configuration interaction that uses tight binding single particle wavefunctions. This approach allows us to analyze atomic scale charge perturbations of the DQD while accounting for the details of the complex momentum space physics of silicon (i.e., valley and valley-orbit physics). We analyze how the energy levels and exchange curves for a DQD are affected by nearby charge defects at various positions relative to the dot, which are consistent with defects expected in the metal-oxide-semiconductor system. △ Less

Submitted 17 December, 2011; originally announced December 2011.

Comments: 5 pages, 3 figures

Journal ref: Physical Review B 85, 125423 (2012)

SiGe/Si quantum dot electron spin decoherence dependence on $^{73}$Ge

Authors: Wayne M. Witzel, Rajib Rahman, Malcolm S. Carroll

Abstract: We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as Si enrichment for long decoherence times. We use atomistic tight-binding modeling for an accurate account of the electron wavefunction which is particularly imp… ▽ More We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as Si enrichment for long decoherence times. We use atomistic tight-binding modeling for an accurate account of the electron wavefunction which is particularly important for determining the contact hyperfine interactions with the Ge nuclear spins. We find decoherence times due to Ge spins at natural concentrations to be milliseconds. This suggests SiGe/Si quantum dot devices employing enriched Si will require enriched Ge as well in order to benefit from long coherence times. We provide a comparison of $T_2$ times for various fractions of nonzero spin isotopes of Si and Ge. △ Less

Submitted 14 May, 2012; v1 submitted 18 October, 2011; originally announced October 2011.

Journal ref: Phys. Rev. B 85, 205312 (2012)

Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance

Authors: R. M. Jock, S. Shankar, A. M. Tyryshkin, Jianhua He, K. Eng, K. D. Childs, L. A. Tracy, M. P. Lilly, M. S. Carroll, S. A. Lyon

Abstract: We present an electron spin resonance (ESR) approach to characterize shallow electron trap** in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO2 interface qualit… ▽ More We present an electron spin resonance (ESR) approach to characterize shallow electron trap** in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO2 interface quality at low electron densities, where conventional mobility measurements are not possible. △ Less

Submitted 2 December, 2011; v1 submitted 4 October, 2011; originally announced October 2011.

Comments: 6 pages, 3 figures

Journal ref: Appl. Phys. Lett. 100, 023503 (2012)

Spatial distribution of electrons on a superfluid helium charge-coupled device

Authors: Maika Takita, F. R. Bradbury, T. M. Gurrieri, K. J. Wilkel, Kevin Eng, M. S. Carroll, S. A. Lyon

Abstract: Electrons floating on the surface of superfluid helium have been suggested as promising mobile spin qubits. Three micron wide channels fabricated with standard silicon processing are filled with superfluid helium by capillary action. Photoemitted electrons are held by voltages applied to underlying gates. The gates are connected as a 3-phase charge-coupled device (CCD). Starting with approximately… ▽ More Electrons floating on the surface of superfluid helium have been suggested as promising mobile spin qubits. Three micron wide channels fabricated with standard silicon processing are filled with superfluid helium by capillary action. Photoemitted electrons are held by voltages applied to underlying gates. The gates are connected as a 3-phase charge-coupled device (CCD). Starting with approximately one electron per channel, no detectable transfer errors occur while clocking $10^9$ pixels. One channel with its associated gates is perpendicular to the other 120, providing a CCD which can transfer electrons between the others. This perpendicular channel has not only shown efficient electron transport but also serves as a way to measure the uniformity of the electron occupancy in the 120 parallel channels. △ Less

Submitted 2 October, 2011; originally announced October 2011.

Triangulating tunneling resonances in a point contact

Authors: Nathaniel C. Bishop, Ralph W. Young, Gregory A. Ten Eyck, Joel R. Wend, Edward S. Bielejec, Kevin Eng, Lisa A. Tracy, Michael P. Lilly, Malcolm S. Carroll, Carlos Borrás Pinilla, Harold L. Stalford

Abstract: We observe resonant tunneling in silicon split gate point contacts implanted with antimony and defined in a self-aligned poly-silicon double gate enhancement mode Si-MOS device structure. We identify which resonances are likely candidates for transport through the antimony donor as opposed to unintentional disorder induced potentials using capacitance triangulation. We determine the capacitances f… ▽ More We observe resonant tunneling in silicon split gate point contacts implanted with antimony and defined in a self-aligned poly-silicon double gate enhancement mode Si-MOS device structure. We identify which resonances are likely candidates for transport through the antimony donor as opposed to unintentional disorder induced potentials using capacitance triangulation. We determine the capacitances from the resonant feature to each of the conducting gates and the source/drain two dimensional electron gas regions. In our device geometry, these capacitances provide information about the resonance location in three dimensions. Semi-classical electrostatic simulations of capacitance, already used to map quantum dot size and position, identify a combination of location and confinement potential size that satisfy our experimental observations. The sensitivity of simulation to position and size allow us to triangulate possible locations of the resonant level with nanometer resolution. We discuss our results and how they may apply to resonant tunneling through a single donor. △ Less

Submitted 25 July, 2011; originally announced July 2011.

Comments: 6 pages, 4 figures, 2 tables, RevTeX4 and PDFLaTeX

Extremely efficient clocked electron transfer on superfluid helium

Authors: F. R. Bradbury, Maika Takita, T. M. Gurrieri, K. J. Wilkel, Kevin Eng, M. S. Carroll, S. A. Lyon

Abstract: Unprecedented transport efficiency is demonstrated for electrons on the surface of micron-scale superfluid helium filled channels by co-opting silicon processing technology to construct the equivalent of a charge-coupled device (CCD). Strong fringing fields lead to undetectably rare transfer failures after over a billion cycles in two dimensions. This extremely efficient transport is measured in 1… ▽ More Unprecedented transport efficiency is demonstrated for electrons on the surface of micron-scale superfluid helium filled channels by co-opting silicon processing technology to construct the equivalent of a charge-coupled device (CCD). Strong fringing fields lead to undetectably rare transfer failures after over a billion cycles in two dimensions. This extremely efficient transport is measured in 120 channels simultaneously with packets of up to 20 electrons, and down to singly occupied pixels. These results point the way towards the large scale transport of either computational qubits or electron spin qubits used for communications in a hybrid qubit system. △ Less

Submitted 20 July, 2011; originally announced July 2011.

Configuration interaction calculations of the controlled phase gate in double quantum dot qubits

Authors: Erik Nielsen, Richard P. Muller, Malcolm S. Carroll

Abstract: We consider qubit coupling resulting from the capacitive coupling between two double quantum dot (DQD) single-triplet qubits. Calculations of the coupling when the two DQDs are detuned symmetrically or asymmetrically are performed using a full configuration interaction (CI). The full CI reveals behavior that is not observed by more commonly used approximations such as Heitler London or Hund Mullik… ▽ More We consider qubit coupling resulting from the capacitive coupling between two double quantum dot (DQD) single-triplet qubits. Calculations of the coupling when the two DQDs are detuned symmetrically or asymmetrically are performed using a full configuration interaction (CI). The full CI reveals behavior that is not observed by more commonly used approximations such as Heitler London or Hund Mulliken, particularly related to the operation of both DQDs in the (0,2) charge sector. We find that there are multiple points in detuning-space where a two-qubit entangling gate can be realized, and that trade-offs between coupling magnitude and sensitivity to fluctuations in detuning make a case for operating the gate in the (0,2) regime not commonly considered. △ Less

Submitted 7 June, 2011; originally announced June 2011.

Comments: 4 pages, 5 figures

Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry

Authors: T. M. Lu, N. C. Bishop, T. Pluym, J. Means, P. G. Kotula, J. Cederberg, L. A. Tracy, J. Dominguez, M. P. Lilly, M. S. Carroll

Abstract: We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich dielectric interfaces and minimizes background dopants. A mobility of 1.6\times10^5 cm^2/Vs at 5.8\times10^{11}/cm^2 is measured in Hall bars that witness the same… ▽ More We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich dielectric interfaces and minimizes background dopants. A mobility of 1.6\times10^5 cm^2/Vs at 5.8\times10^{11}/cm^2 is measured in Hall bars that witness the same device process flow as the quantum dot. Periodic Coulomb blockade (CB) is measured in a double-top-gated lateral quantum dot nanostructure. The CB terminates with open diamonds up to \pm 10 mV of DC voltage across the device. The devices were fabricated within a 150 mm Si foundry setting that uses implanted ohmics and chemical-vapor-deposited dielectrics, in contrast to previously demonstrated enhancement-mode SiGe/s-Si structures made with AuSb alloyed ohmics and atomic-layer-deposited dielectric. A modified implant, polysilicon formation and annealing conditions were utilized to minimize the thermal budget so that the buried s-Si layer would not be washed out by Ge/Si interdiffusion. △ Less

Submitted 1 June, 2011; originally announced June 2011.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett.99, 043101 (2011)

Optimized pulses for the control of uncertain qubits

Authors: Matthew D. Grace, Jason Dominy, Wayne M. Witzel, Malcolm S. Carroll

Abstract: Constructing high-fidelity control fields that are robust to control, system, and/or surrounding environment uncertainties is a crucial objective for quantum information processing. Using the two-state Landau-Zener model for illustrative simulations of a controlled qubit, we generate optimal controls for π/2- and π-pulses, and investigate their inherent robustness to uncertainty in the magnitude o… ▽ More Constructing high-fidelity control fields that are robust to control, system, and/or surrounding environment uncertainties is a crucial objective for quantum information processing. Using the two-state Landau-Zener model for illustrative simulations of a controlled qubit, we generate optimal controls for π/2- and π-pulses, and investigate their inherent robustness to uncertainty in the magnitude of the drift Hamiltonian. Next, we construct a quantum-control protocol to improve system-drift robustness by combining environment-decoupling pulse criteria and optimal control theory for unitary operations. By perturbatively expanding the unitary time-evolution operator for an open quantum system, previous analysis of environment-decoupling control pulses has calculated explicit control-field criteria to suppress environment-induced errors up to (but not including) third order from π/2- and π-pulses. We systematically integrate this criteria with optimal control theory, incorporating an estimate of the uncertain parameter, to produce improvements in gate fidelity and robustness, demonstrated via a numerical example based on double quantum dot qubits. For the qubit model used in this work, post facto analysis of the resulting controls suggests that realistic control-field fluctuations and noise may contribute just as significantly to gate errors as system and environment fluctuations. △ Less

Submitted 21 May, 2012; v1 submitted 11 May, 2011; originally announced May 2011.

Comments: 38 pages, 15 figures, RevTeX 4.1, minor modifications to the previous version

Journal ref: Phys. Rev. A, 85, 052313 (2012)

Implications of Electronics Constraints for Solid-State Quantum Error Correction and Quantum Circuit Failure Probability

Authors: James E. Levy, Malcolm S. Carroll, Anand Ganti, Cynthia A. Phillips, Andrew J. Landahl, Thomas M. Gurrieri, Robert D. Carr, Harold L. Stalford, Erik Nielsen

Abstract: In this paper we present the impact of classical electronics constraints on a solid-state quantum dot logical qubit architecture. Constraints due to routing density, bandwidth allocation, signal timing, and thermally aware placement of classical supporting electronics significantly affect the quantum error correction circuit's error rate. We analyze one level of a quantum error correction circuit… ▽ More In this paper we present the impact of classical electronics constraints on a solid-state quantum dot logical qubit architecture. Constraints due to routing density, bandwidth allocation, signal timing, and thermally aware placement of classical supporting electronics significantly affect the quantum error correction circuit's error rate. We analyze one level of a quantum error correction circuit using nine data qubits in a Bacon-Shor code configured as a quantum memory. A hypothetical silicon double quantum dot quantum bit (qubit) is used as the fundamental element. A pessimistic estimate of the error probability of the quantum circuit is calculated using the total number of gates and idle time using a provably optimal schedule for the circuit operations obtained with an integer program methodology. The micro-architecture analysis provides insight about the different ways the electronics impact the circuit performance (e.g., extra idle time in the schedule), which can significantly limit the ultimate performance of any quantum circuit and therefore is a critical foundation for any future larger scale architecture analysis. △ Less

Submitted 3 May, 2011; originally announced May 2011.

Comments: 10 pages, 7 figures, 3 tables

Journal ref: New Journal of Physics, Vol 13, 083021, 2011

Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry

Authors: L. A. Tracy, E. P. Nordberg, R. W. Young, C. Borras Pinilla, H. L. Stalford, G. A. Ten Eyck, K. Eng, K. D. Childs, J. Stevens, M. P. Lilly, M. A. Eriksson, M. S. Carroll

Abstract: We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages applied. Intriguingly, these gate voltages themselves are not symmetric. Comparison with numerical simulations indicates that the applied gate voltages se… ▽ More We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages applied. Intriguingly, these gate voltages themselves are not symmetric. Comparison with numerical simulations indicates that the applied gate voltages serve to offset an intrinsic asymmetry in the physical device. We also show a transition from a large single dot to two well isolated coupled dots, where the central gate of the device is used to controllably tune the interdot coupling. △ Less

Submitted 29 October, 2010; originally announced November 2010.

Comments: 4 pages, 3 figures, to be published in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 97, 192110 (2010)

Electron spin decoherence in isotope-enriched silicon

Authors: Wayne M. Witzel, Malcolm S. Carroll, Andrea Morello, Lukasz Cywinski, S. Das Sarma

Abstract: Silicon is promising for spin-based quantum computation because nuclear spins, a source of magnetic noise, may be eliminated through isotopic enrichment. Long spin decoherence times, $T_2$, have been measured in isotope-enriched silicon but come far short of the $T_2 = 2 T_1$ limit. The effect of nuclear spins on $T_2$ is well established. However, the effect of background electron spins from ever… ▽ More Silicon is promising for spin-based quantum computation because nuclear spins, a source of magnetic noise, may be eliminated through isotopic enrichment. Long spin decoherence times, $T_2$, have been measured in isotope-enriched silicon but come far short of the $T_2 = 2 T_1$ limit. The effect of nuclear spins on $T_2$ is well established. However, the effect of background electron spins from ever present residual phosphorus impurities in silicon can also produce significant decoherence. We study spin decoherence decay as a function of donor concentration, $^{29}$Si concentration, and temperature using cluster expansion techniques specifically adapted to the problem of a sparse dipolarly coupled electron spin bath. Our results agree with the existing experimental spin echo data in Si:P and establish the importance of background dopants as the ultimate decoherence mechanism in isotope-enriched silicon. △ Less

Submitted 27 October, 2010; v1 submitted 13 August, 2010; originally announced August 2010.

Journal ref: Phys. Rev. Lett. 105, 187602 (2010)

Coherent electron transport by adiabatic passage in an imperfect donor chain

Authors: Rajib Rahman, Richard P. Muller, James E. Levy, Malcolm S. Carroll, Gerhard Klimeck, Andrew D. Greentree, Lloyd C. L. Hollenberg

Abstract: Coherent Tunneling Adiabatic Passage (CTAP) has been proposed as a long-range physical qubit transport mechanism in solid-state quantum computing architectures. Although the mechanism can be implemented in either a chain of quantum dots or donors, a 1D chain of donors in Si is of particular interest due to the natural confining potential of donors that can in principle help reduce the gate densiti… ▽ More Coherent Tunneling Adiabatic Passage (CTAP) has been proposed as a long-range physical qubit transport mechanism in solid-state quantum computing architectures. Although the mechanism can be implemented in either a chain of quantum dots or donors, a 1D chain of donors in Si is of particular interest due to the natural confining potential of donors that can in principle help reduce the gate densities in solid-state quantum computing architectures. Using detailed atomistic modeling, we investigate CTAP in a more realistic triple donor system in the presence of inevitable fabrication imperfections. In particular, we investigate how an adiabatic pathway for CTAP is affected by donor misplacements, and propose schemes to correct for such errors. We also investigate the sensitivity of the adiabatic path to gate voltage fluctuations. The tight-binding based atomistic treatment of straggle used here may benefit understanding of other donor nanostructures, such as donor-based charge and spin qubits. Finally, we derive an effective 3 \times 3 model of CTAP that accurately resembles the voltage tuned lowest energy states of the multi-million atom tight-binding simulations, and provides a translation between intensive atomistic Hamiltonians and simplified effective Hamiltonians while retaining the relevant atomic-scale information. This method can help characterize multi-donor experimental structures quickly and accurately even in the presence of imperfections, overcoming some of the numeric intractabilities of finding optimal eigenstates for non-ideal donor placements. △ Less

Submitted 5 August, 2010; originally announced August 2010.

Comments: 9 pages, 8 figures

Journal ref: Physical Review B 82, 155315 (2010)

Compact Modeling of 0.35 micron SOI CMOS Technology Node for 4 K DC Operation using Verilog-A

Authors: A. Akturk, K. Eng, J. Hamlet, S. Potbhare, E. Longoria, R. Young, M. Peckerar, T. Gurrieri, M. S. Carroll, N. Goldsman

Abstract: Compact modeling of MOSFETs from a 0.35 micron SOI technology node operating at 4 K is presented. The Verilog-A language is used to modify device equations for BSIM models and more accurately reproduce measured DC behavior, which is not possible with the standard BSIM model set. The Verilog-A approach also allows the embedding of nonlinear length, width and bias effects into BSIM calculated curv… ▽ More Compact modeling of MOSFETs from a 0.35 micron SOI technology node operating at 4 K is presented. The Verilog-A language is used to modify device equations for BSIM models and more accurately reproduce measured DC behavior, which is not possible with the standard BSIM model set. The Verilog-A approach also allows the embedding of nonlinear length, width and bias effects into BSIM calculated curves beyond those that can be achieved by the use of different BSIM parameter sets. Nonlinear dependences are necessary to capture effects particular to 4 K behavior, such as current kinks. The 4 K DC behavior is reproduced well by the compact model and the model seamlessly evolves during simulation of circuits and systems as the simulator encounters SOI MOSFETs with different lengths and widths. The incorporation of various length/width and bias dependent effects into one Verilog-A / BSIM4 library, therefore, produces one model for all sets of devices for this technology node. △ Less

Submitted 19 January, 2010; originally announced January 2010.

Capacitance modeling of complex topographical silicon quantum dot structures

Authors: H. L. Stalford, R. Young, E. P. Nordberg, James. E. Levy, Carlos Borras Pinilla, M. S. Carroll

Abstract: Quantum dot (QD) lay-outs are becoming more complex as the technology is being applied to more complex multi-QD structures. This increase in complexity requires improved capacitance modeling both for design and accurate interpretation of QD properties from measurement. A combination of process simulation, electrostatic simulation, and computer assisted design (CAD) lay-out packages are used to d… ▽ More Quantum dot (QD) lay-outs are becoming more complex as the technology is being applied to more complex multi-QD structures. This increase in complexity requires improved capacitance modeling both for design and accurate interpretation of QD properties from measurement. A combination of process simulation, electrostatic simulation, and computer assisted design (CAD) lay-out packages are used to develop a three dimensional (3D) classical capacitance model. The agreement of the capacitances of the classical model is tested against two different, experimentally measured, topographically complex silicon QD geometries. Agreement with experiment, within 10-20%, is demonstrated for the two structures when the details of the structure are transferred from the CAD to the model capturing the full 3D topography. Small uncertainty in device dimensions due to uncontrolled variation in processing, like layer thickness and gate size, are calculated to be sufficient to explain the disagreement. The sensitivity of the capacitances to small variations in the structure also highlights the limits of accuracy of capacitance models for QD analysis. We furthermore observe that a critical density, the metal insulator transition, can be used as a good approximation of the metallic edge of the quantum dot when electron density in the dot is calculated directly with a semi-classical simulation. △ Less

Submitted 18 November, 2009; originally announced November 2009.

Single ion implantation for single donor devices using Geiger mode detectors

Authors: E. Bielejec, J. A. Seamons, M. S. Carroll

Abstract: Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect centers in diamond. Improving single ion detector sensitivity is linked to improving control over the straggle of the ion as well as providing more flexibility… ▽ More Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect centers in diamond. Improving single ion detector sensitivity is linked to improving control over the straggle of the ion as well as providing more flexibility in lay-out integration with the active region of the single donor device construction zone by allowing ion sensing at potentially greater distances. Using a remotely located passively gated single ion Geiger mode avalanche diode (SIGMA) detector we have demonstrated 100% detection efficiency at a distance of >75 um from the center of the collecting junction. This detection efficiency is achieved with sensitivity to ~600 or fewer electron-hole pairs produced by the implanted ion. Ion detectors with this sensitivity and integrated with a thin dielectric, for example 5 nm gate oxide, using low energy Sb implantation would have an end of range straggle of <2.5 nm. Significant reduction in false count probability is achieved by modifying the ion beam set-up to allow for cryogenic operation of the SIGMA detector. Using a detection window of 230 ns at 1 Hz, the probability of a false count was measured as 1E-1 and 1E-4 for operation temperatures of 300K and 77K, respectively. Low temperature operation and reduced false, dark, counts are critical to achieving high confidence in single ion arrival. For the device performance in this work, the confidence is calculated as a probability of >98% for counting one and only one ion for a false count probability of 1E-4 at an average ion number per gated window of 0.015. △ Less

Submitted 28 September, 2009; originally announced September 2009.

Comments: 10 pages, 5 figures, submitted to Nanotechnology

Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots

Authors: E. P. Nordberg, H. L. Stalford, R. Young, G. A. Ten Eyck, K. Eng, L. A. Tracy, K. D. Childs, J. R. Wendt, R. K. Grubbs, J. Stevens, M. P. Lilly, M. A. Eriksson, M. S. Carroll

Abstract: Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between t… ▽ More Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between the dot and a nearby lead. We extract the coupling capacitance between the charge sensor and the quantum dot, and we show that it agrees well with a 3D capacitance model of the integrated sensor and quantum dot system. △ Less

Submitted 18 September, 2009; originally announced September 2009.

Comments: 4 Pages, 3 Figures

Journal ref: Appl. Phys. Lett. 95, 202102 (2009)

Implications of Simultaneous Requirements for Low Noise Exchange Gates in Double Quantum Dots

Authors: Erik Nielsen, Ralph W. Young, Richard P. Muller, M. S. Carroll

Abstract: Achieving low-error, exchange-interaction operations in quantum dots for quantum computing imposes simultaneous requirements on the exchange energy's dependence on applied voltages. A double quantum dot (DQD) qubit, approximated with a quadratic potential, is solved using a full configuration interaction method. This method is more accurate than Heitler-London and Hund-Mulliken approaches and ca… ▽ More Achieving low-error, exchange-interaction operations in quantum dots for quantum computing imposes simultaneous requirements on the exchange energy's dependence on applied voltages. A double quantum dot (DQD) qubit, approximated with a quadratic potential, is solved using a full configuration interaction method. This method is more accurate than Heitler-London and Hund-Mulliken approaches and captures new and significant qualitative behavior. We show that multiple regimes can be found in which the exchange energy's dependence on the bias voltage between the dots is compatible with current quantum error correction codes and state-of-the-art electronics. Identifying such regimes may prove valuable for the construction and operation of quantum gates that are robust to charge fluctuations, particularly in the case of dynamically corrected gates. △ Less

Submitted 8 April, 2010; v1 submitted 31 August, 2009; originally announced September 2009.

Comments: 8 pages, 6 figures

Enhancement mode double top gated MOS nanostructures with tunable lateral geometry

Authors: E. P. Nordberg, G. A. Ten Eyck, H. L. Stalford, R. P. Muller, R. W. Young, K. Eng, L. A. Tracy, K. D. Childs, J. R. Wendt, R. K. Grubbs, J. Stevens, M. P. Lilly, M. A. Eriksson, M. S. Carroll

Abstract: We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect… ▽ More We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect densities (i.e. interface traps and fixed oxide charge) are measured for critical process steps, and we correlate low disorder behavior with a quantitative defect density. This work provides quantitative guidance that has not been previously established about defect densities for which Si quantum dots do not exhibit parasitic dot formation. These devices make use of a double-layer gate stack in which many regions, including the critical gate oxide, were fabricated in a fully-qualified CMOS facility. △ Less

Submitted 11 September, 2009; v1 submitted 19 June, 2009; originally announced June 2009.

Comments: 11 pages, 6 figures, 3 tables, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 80, 115331 (2009)

The impact of classical electronics constraints on a solid-state logical qubit memory

Authors: James E. Levy, Anand Ganti, Cynthia A. Phillips, Benjamin R. Hamlet, Andrew J. Landahl, Thomas M. Gurrieri, Robert D. Carr, Malcolm S. Carroll

Abstract: We describe a fault-tolerant memory for an error-corrected logical qubit based on silicon double quantum dot physical qubits. Our design accounts for constraints imposed by supporting classical electronics. A significant consequence of the constraints is to add error-prone idle steps for the physical qubits. Even using a schedule with provably minimum idle time, for our noise model and choice of… ▽ More We describe a fault-tolerant memory for an error-corrected logical qubit based on silicon double quantum dot physical qubits. Our design accounts for constraints imposed by supporting classical electronics. A significant consequence of the constraints is to add error-prone idle steps for the physical qubits. Even using a schedule with provably minimum idle time, for our noise model and choice of error-correction code, we find that these additional idles negate any benefits of error correction. Using additional qubit operations, we can greatly suppress idle-induced errors, making error correction beneficial, provided the qubit operations achieve an error rate less than $2 \times 10^{-5}$. We discuss other consequences of these constraints such as error-correction code choice and physical qubit operation speed. While our analysis is specific to this memory architecture, the methods we develop are general enough to apply to other architectures as well. △ Less

Submitted 31 March, 2009; originally announced April 2009.

Comments: 18 pages

The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET

Authors: L. A. Tracy, E. H. Hwang, K. Eng, G. A. Ten Eyck, E. P. Nordberg, K. Childs, M. S. Carroll, M. P. Lilly, S. Das Sarma

Abstract: By analyzing the temperature ($T$) and density ($n$) dependence of the measured conductivity ($σ$) of 2D electrons in the low density ($\sim10^{11}$cm$^{-2}$) and temperature (0.02 - 10 K) regime of high-mobility (1.0 and 1.5 $\times 10^4$ cm$^2$/Vs) Si MOSFETs, we establish that the putative 2D metal-insulator transition is a density-inhomogeneity driven percolation transition where the density… ▽ More By analyzing the temperature ($T$) and density ($n$) dependence of the measured conductivity ($σ$) of 2D electrons in the low density ($\sim10^{11}$cm$^{-2}$) and temperature (0.02 - 10 K) regime of high-mobility (1.0 and 1.5 $\times 10^4$ cm$^2$/Vs) Si MOSFETs, we establish that the putative 2D metal-insulator transition is a density-inhomogeneity driven percolation transition where the density-dependent conductivity vanishes as $σ(n) \propto (n - n_p)^p$, with the exponent $p \sim 1.2$ being consistent with a percolation transition. The `metallic' behavior of $σ(T)$ for $n > n_p$ is shown to be well-described by a semi-classical Boltzmann theory, and we observe the standard weak localization-induced negative magnetoresistance behavior, as expected in a normal Fermi liquid, in the metallic phase. △ Less

Submitted 18 May, 2009; v1 submitted 9 November, 2008; originally announced November 2008.

Comments: 6 pages, 5 figures; extended version (accepted to Phys. Rev. B)

Journal ref: Phys. Rev. B 79, 235307 (2009)