Showing 1–21 of 21 results for author: Carrad, D

Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices

Authors: Dāgs Olšteins, Gunjan Nagda, Damon J. Carrad, Daria V. Beznasyuk, Christian E. N. Petersen, Sara Martí-Sánchez, Jordi Arbiol, Thomas Sand Jespersen

Abstract: New approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within larg… ▽ More New approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of 256 individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility. △ Less

Submitted 22 May, 2024; v1 submitted 10 January, 2024; originally announced January 2024.

Cryogenic Multiplexing with Bottom-Up Nanowires

Authors: Dāgs Olšteins, Gunjan Nagda, Damon J. Carrad, Daria V. Beznasiuk, Christian E. N. Petersen, Sara Martí-Sánchez, Jordi Arbiol, Thomas Sand Jespersen

Abstract: Bottom-up grown nanomaterials play an integral role in the development of quantum technologies. Among these, semiconductor nanowires (NWs) are widely used in proof-of-principle experiments, however, difficulties in parallel processing of conventionally-grown NWs makes scalability unfeasible. Here, we harness selective area growth (SAG) to remove this road-block. We demonstrate large scale integrat… ▽ More Bottom-up grown nanomaterials play an integral role in the development of quantum technologies. Among these, semiconductor nanowires (NWs) are widely used in proof-of-principle experiments, however, difficulties in parallel processing of conventionally-grown NWs makes scalability unfeasible. Here, we harness selective area growth (SAG) to remove this road-block. We demonstrate large scale integrated SAG NW circuits consisting of 512 channel multiplexer/demultiplexer pairs, incorporating thousands of interconnected SAG NWs operating under deep cryogenic conditions. Multiplexers enable a range of new strategies in quantum device research and scaling by increase the device count while limiting the number of connections between room-temperature control electronics and the cryogenic samples. As an example of this potential we perform a statistical characterization of large arrays of identical SAG quantum dots thus establishing the feasibility of applying cross-bar gating strategies for efficient scaling of future SAG quantum circuits. △ Less

Submitted 25 April, 2023; originally announced April 2023.

Comments: Main text and Supplementary Information

Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowires

Authors: Sabbir A. Khan, Sara Martí-Sánchez, Dags Olsteins, Charalampos Lampadaris, Damon James Carrad, Yu Liu, Judith Quiñones, Maria Chiara Spadaro, Thomas S. Jespersen, Peter Krogstrup, Jordi Arbiol

Abstract: Hybrid semiconductor/superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low-dimensionality and crystal structure flexibility facilitate novel heterostructure growth and efficient material optimization; crucial prerequisites for accurately constructing complex multi-component quantum materials. Here,… ▽ More Hybrid semiconductor/superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low-dimensionality and crystal structure flexibility facilitate novel heterostructure growth and efficient material optimization; crucial prerequisites for accurately constructing complex multi-component quantum materials. Here, we present an extensive optimization of Sn growth on InSb, InAsSb and InAs nanowires. We demonstrate how the growth conditions and the crystal structure/symmetry of the semiconductor drive the formation of either semi-metallic $\mathrm{α-Sn}$ or superconducting $\mathrm{β-Sn}$. For InAs nanowires, we obtain phase-pure, superconducting $\mathrm{β-Sn}$ shells. However, for InSb and InAsSb nanowires, an initial epitaxial $\mathrm{α-Sn}$ phase evolves into a polycrystalline shell of coexisting $\mathrmα$ and $\mathrmβ$ phases, where the $β/α$ volume ratio increases with Sn shell thickness. Whether these nanowires exhibit superconductivity or not critically relies on the $\mathrm{β-Sn}$ content. Therefore, this work provides key insights into Sn phase control on a variety of semiconductors, with consequences for the yield of superconducting hybrids suitable for generating topological systems. △ Less

Submitted 2 January, 2023; v1 submitted 26 December, 2022; originally announced December 2022.

Comments: 12 pages, 5 figures

InAs/MoRe hybrid semiconductor/superconductor nanowire devices

Authors: Bilal Kousar, Damon J. Carrad, Lukas Stampfer, Peter Krogstrup, Jesper Nygård, Thomas S. Jespersen

Abstract: Implementing superconductors capable of proximity-inducing a large energy-gap in semiconductors in the presence of strong magnetic fields is a major goal towards applications of semiconductor/superconductor hybrid materials in future quantum information technologies. Here, we study the performance of devices consisting of InAs nanowires in electrical contact to molybdenum-rhenium (MoRe) supercondu… ▽ More Implementing superconductors capable of proximity-inducing a large energy-gap in semiconductors in the presence of strong magnetic fields is a major goal towards applications of semiconductor/superconductor hybrid materials in future quantum information technologies. Here, we study the performance of devices consisting of InAs nanowires in electrical contact to molybdenum-rhenium (MoRe) superconducting alloys. The MoRe thin films exhibit transition temperatures ~10 K and critical fields exceeding 6 T. Normal/superconductor devices enabled tunnel spectroscopy of the corresponding induced superconductivity, which was maintained up to ~10 K, and MoRe based Josephson devices exhibit supercurrents and multiple Andreev reflections. We determine an induced superconducting gap lower than expected from the transition temperature, and observe gap softening at finite magnetic field. These may be common features for hybrids based on large gap, type-II superconductors. The results encourage further development of MoRe-based hybrids. △ Less

Submitted 4 November, 2022; originally announced November 2022.

Photon assisted tunneling of high order multiple Andreev reflections in epitaxial nanowire Josephson junctions

Authors: Damon J. Carrad, Lukas Stampfer, Dags Olsteins, Christian E. N. Petersen, Sabbir A. Khan, Peter Krogstrup, Thomas Sand Jespersen

Abstract: Semiconductor/superconductor hybrids exhibit a range of phenomena that can be exploited for the study of novel physics and the development of new technologies. Understanding the origin the energy spectrum of such hybrids is therefore a crucial goal. Here, we study Josephson junctions defined by shadow epitaxy on InAsSb/Al nanowires. The devices exhibit gate-tunable supercurrents at low temperature… ▽ More Semiconductor/superconductor hybrids exhibit a range of phenomena that can be exploited for the study of novel physics and the development of new technologies. Understanding the origin the energy spectrum of such hybrids is therefore a crucial goal. Here, we study Josephson junctions defined by shadow epitaxy on InAsSb/Al nanowires. The devices exhibit gate-tunable supercurrents at low temperatures and multiple Andreev reflections (MARs) at finite voltage bias. Under microwave irradiation, photon assisted tunneling (PAT) of MARs produces characteristic oscillating sidebands at quantized energies, which depend on MAR order, $n$, in agreement with a recently suggested modification of the classical Tien-Gordon equation. The scaling of the quantized energy spacings with microwave frequency provides independent confirmation of the effective charge $ne$ transferred by the $n^\mathrm{th}$ order tunnel process. The measurements suggest PAT as a powerful method for assigning the origin of low energy spectral features in hybrid Josephson devices. △ Less

Submitted 26 July, 2022; v1 submitted 6 May, 2022; originally announced May 2022.

Superconductivity and parity preservation in as-grown In islands on InAs nanowires

Authors: Martin Saurbrey Bjergfelt, Damon J. Carrad, Thomas Kanne, Erik Johnson, Elisabetta M. Fiordaliso, Thomas Sand Jespersen, Jesper Nygård

Abstract: We report in-situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In crystals grew in a tetragonal body-centred crystal structure within two families of orientations relative to wurtzite InAs. The crystalline islands had lengths < 500 nm and low-energy surfaces, suggesting that growth was… ▽ More We report in-situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In crystals grew in a tetragonal body-centred crystal structure within two families of orientations relative to wurtzite InAs. The crystalline islands had lengths < 500 nm and low-energy surfaces, suggesting that growth was driven mainly by surface energy minimization. Electrical transport through In/InAs devices exhibited Cooper pair charging, evidencing charge parity preservation and a pristine In/InAs interface, with an induced superconducting gap ~ 0.45 meV. Cooper pair charging persisted to temperatures > 1.2 K and magnetic fields ~ 0.7 T, demonstrating that In/InAs hybrids belong to an expanding class of semiconductor/superconductor hybrids operating over a wider parameter space than state-of-the-art Al-based hybrids. Engineering crystal morphology while isolating single islands using shadow epitaxy provides an interesting alternative to previous semiconductor/superconductor hybrid morphologies and device geometries. △ Less

Submitted 23 November, 2021; originally announced November 2021.

Comments: Published in Nano Letters: https://pubs.acs.org/doi/10.1021/acs.nanolett.1c02487

Andreev interference in the surface accumulation layer of half-shell InAsSb/Al hybrid nanowires

Authors: Lukas Stampfer, Damon J. Carrad, Dags Olsteins, Christian E. N. Petersen, Sabbir A. Khan, Peter Krogstrup, Thomas S. Jespersen

Abstract: Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of InAsSb/Al nanowires was studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires a… ▽ More Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of InAsSb/Al nanowires was studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires and devices featuring a short Josephson junction fabricated by shadow lithography, exhibited periodic modulation of the switching current. The period corresponds to a flux quantum through the nanowire diameter and is consistent with Andreev bound states occupying a cylindrical surface accumulation layer. The spatial distribution was tunable by a gate potential as expected from electrostatic models. △ Less

Submitted 1 April, 2021; originally announced April 2021.

Report number: NBI QDEV 2021

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Authors: Daria V. Beznasyuk, Sara Martí-Sánchez, Jung-Hyun Kang, Rawa Tanta, Mohana Rajpalke, Tomaš Stankevič, Anna Wulff Christensen, Maria Chiara Spadaro, Roberto Bergamaschini, Nikhil N. Maka, Christian Emanuel N. Petersen, Damon J. Carrad, Thomas Sand Jespersen, Jordi Arbiol, Peter Krogstrup

Abstract: Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realized, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and non-uniform composition due to material intermixing all scatte… ▽ More Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realized, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and non-uniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an In$_x$Ga$_{1-x}$As buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high quality InAs transport channels with the field-effect electron mobility over~10000~cm$^2$V$^{-1}$s$^{-1}$. This is twice as high as for non-optimized samples and among the highest reported for InAs selective area grown nanostructures. △ Less

Submitted 4 February, 2022; v1 submitted 29 March, 2021; originally announced March 2021.

Comments: Main text: 9 pages, 5 figures Supporting Information is available at https://erda.ku.dk/archives/d3b11c9d399dd9a715c5e2c84870e3c4/published-archive.html

Report number: NBI QDEV 2022

Epitaxial Pb on InAs nanowires

Authors: Thomas Kanne, Mikelis Marnauza, Dags Olsteins, Damon J. Carrad, Joachim E. Sestoft, Joeri de Bruijckere, Lunjie Zeng, Erik Johnson, Eva Olsson, Kasper Grove-Rasmussen, Jesper Nygård

Abstract: Semiconductor-superconductor hybrids are widely used for realising complex quantum phenomena such as topological superconductivity and spins coupled to Cooper pairs. Accessing exotic regimes at high magnetic fields and increasing operating temperatures beyond the state-of-the-art requires new, epitaxially matched semiconductor-superconductor materials. The challenge is to generate favourable condi… ▽ More Semiconductor-superconductor hybrids are widely used for realising complex quantum phenomena such as topological superconductivity and spins coupled to Cooper pairs. Accessing exotic regimes at high magnetic fields and increasing operating temperatures beyond the state-of-the-art requires new, epitaxially matched semiconductor-superconductor materials. The challenge is to generate favourable conditions for heterostructure formation between materials with the desired inherent properties. Here, we harness increased knowledge of metal-on-semiconductor growth to develop InAs nanowires with epitaxially matched, single crystal, atomically flat Pb films along the entire nanowire. These highly ordered heterostructures have a critical temperature of 7 K and a superconducting gap of 1.25 meV, which remains hard at 8.5 T, thereby more than doubling the available parameter space. Additionally, InAs/Pb island devics exhibit magnetic field-driven transitions from Cooper pair to single electron charging; a pre-requisite for use in topological quantum computation. Introducing semiconductor-Pb hybrids potentially enables access to entirely new regimes for an array of quantum systems. △ Less

Submitted 26 February, 2020; originally announced February 2020.

Report number: NBI QDEV 2020

Journal ref: Nature Nanotechnology (2021)

Shadow epitaxy for in-situ growth of generic semiconductor/superconductor devices

Authors: Damon J. Carrad, Martin Bjergfelt, Thomas Kanne, Martin Aagesen, Filip Krizek, Elisabetta M. Fiordaliso, Erik Johnson, Jesper Nygård, Thomas Sand Jespersen

Abstract: Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminium heterostruct… ▽ More Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminium heterostructures. Fabrication of devices requires selective etch processes; these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations. We present a crystal growth platform -- based on three-dimensional structuring of growth substrates -- which enables synthesis of semiconductor nanowire hybrids with in-situ patterned superconductor shells. This platform eliminates the need for etching, thereby enabling full freedom in choice of hybrid constituents. We realise and characterise all the most frequently used architectures in superconducting hybrid devices, finding increased yield and electrostatic stability compared to etched devices, along with evidence of ballistic superconductivity. In addition to aluminium, we present hybrid devices based on tantalum, niobium and vanadium. This is the submitted version of the manuscript. The accepted, peer reviewed version is available from Advanced Materials: http://doi.org/10.1002/adma.201908411 Previous title: Shadow lithography for in-situ growth of generic semiconductor/superconductor devices △ Less

Submitted 8 May, 2020; v1 submitted 1 November, 2019; originally announced November 2019.

Report number: NBI QDEV 2019

Journal ref: Advanced Materials (2020) 1908411

Diluted Oxide Interfaces with Tunable Ground States

Authors: Yulin Gan, Dennis Valbjørn Christensen, Yu Zhang, Hongrui Zhang, Krishnan Dileep, Zhicheng Zhong, Wei Niu, Damon James Carrad, Kion Norrman, Merlin von Soosten, Thomas sand Jespersen, Baogen Shen, Nicolas Gauquelin, Johan Verbeeck, Jirong Sun, Nini Pryds, Yunzhong Chen

Abstract: The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal-insulator transitions remains challenging. Here, we report an unforeseen tunability of the phase diagram of LAO/STO by a… ▽ More The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal-insulator transitions remains challenging. Here, we report an unforeseen tunability of the phase diagram of LAO/STO by alloying LAO with a ferromagnetic LaMnO3 insulator without forming lattice disorder and at the same time without changing the polarity of the system. By increasing the Mn-do** level, x, of LaAl1-xMnxO3/STO, the interface undergoes a Lifshitz transition at x = 0.225 across a critical carrier density of nc= 2.8E13 cm-2, where a peak TSC =255 mK of superconducting transition temperature is observed. Moreover, the LaAl1-xMnxO3 turns ferromagnetic at x >=0.25. Remarkably, at x = 0.3, where the metallic interface is populated by only dxy electrons and just before it becomes insulating, we achieve reproducibly a same device with both signatures of superconductivity and clear anomalous Hall effect. This provides a unique and effective way to tailor oxide interfaces for designing on-demand electronic and spintronic devices. △ Less

Submitted 15 January, 2019; originally announced January 2019.

Comments: 18 pages and 6 figures

Journal ref: Adv. Mater. 2019

Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

Authors: J. G. Gluschke, J. Seidl, A. M. Burke, R. W. Lyttleton, D. J. Carrad, A. R. Ullah, S. Fahlvik Svensson, S. Lehmann, H. Linke, A. P. Micolich

Abstract: We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control… ▽ More We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300 nm, 200 nm, and 150 nm gate length. Our method enables us to achieve sub-threshold swings as low as 38 mV/dec at 77 K for a 150 nm gate length. △ Less

Submitted 8 October, 2018; originally announced October 2018.

Comments: Submitted to Nanotechnology

Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors

Authors: J. G. Gluschke, J. Seidl, R. W. Lyttleton, D. J. Carrad, J. W. Cochrane, S. Lehmann, L. Samuelson, A. P. Micolich

Abstract: We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled dep… ▽ More We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of <100 nm thick parylene films on III-V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally-coated nanowires, which we used to produce functional $Ω$-gate and gate-all-around structures. These give sub-threshold swings as low as 140 mV/dec and on/off ratios exceeding $10^3$ at room temperature. For the gate-all-around structure, we developed a novel fabrication strategy that overcomes some of the limitations with previous lateral wrap-gate nanowire transistors. Finally, we show that parylene can be deposited over chemically-treated nanowire surfaces; a feature generally not possible with oxides produced by atomic layer deposition due to the surface `self-cleaning' effect. Our results highlight the potential for parylene as an alternative ultra-thin insulator in nanoscale electronic devices more broadly, with potential applications extending into nanobioelectronics due to parylene's well-established biocompatible properties. △ Less

Submitted 27 September, 2018; originally announced September 2018.

Journal ref: Nano Letters 18, 4431-4439 (2018)

Near-thermal limit gating in heavily-doped III-V semiconductor nanowires using polymer electrolytes

Authors: A. R. Ullah, D. J. Carrad, P. Krogstrup, J. Nygård, A. P. Micolich

Abstract: Do** is a common route to reducing nanowire transistor on-resistance but has limits. High do** level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be do** in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of sub-threshold swing and… ▽ More Do** is a common route to reducing nanowire transistor on-resistance but has limits. High do** level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be do** in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of sub-threshold swing and contact resistance that surpasses the best existing p-type nanowire MOSFETs. Our sub-threshold swing of 75 mV/dec is within 25% of the room-temperature thermal limit and comparable with n-InP and n-GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications. △ Less

Submitted 6 February, 2018; v1 submitted 18 October, 2017; originally announced October 2017.

Comments: 6 pages, 2 figures, supplementary available at journal

Journal ref: Phys. Rev. Materials 2, 025601 (2018)

Hybrid nanowire ion-to-electron transducers for integrated bioelectronic circuitry

Authors: D. J. Carrad, A. B. Mostert, A. R. Ullah, A. M. Burke, H. J. Joyce, H. H. Tan, C. Jagadish, P. Krogstrup, J. Nygård, P. Meredith, A. P. Micolich

Abstract: A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics and are best supported by very different materials types -- electronic signals in inorganic semiconductors and ionic/protonic signals in organic or bio-organic poly… ▽ More A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics and are best supported by very different materials types -- electronic signals in inorganic semiconductors and ionic/protonic signals in organic or bio-organic polymers, gels or electrolytes. Here we demonstrate a new class of organic-inorganic transducing interface featuring semiconducting nanowires electrostatically gated using a solid proton-transporting hygroscopic polymer. This model platform allows us to study the basic transducing mechanisms as well as deliver high fidelity signal conversion by tap** into and drawing together the best candidates from traditionally disparate realms of electronic materials research. By combining complementary n- and p-type transducers we demonstrate functional logic with significant potential for scaling towards high-density integrated bioelectronic circuitry. △ Less

Submitted 29 April, 2017; originally announced May 2017.

Journal ref: Nano Letters 17, 827-833 (2017)

InAs nanowire transistors with multiple, independent wrap-gate segments

Authors: A. M. Burke, D. J. Carrad, J. G. Gluschke, K. Storm, S. Fahlvik Svensson, H. Linke, L. Samuelson, A. P. Micolich

Abstract: We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabri… ▽ More We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favourable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures. △ Less

Submitted 7 May, 2015; originally announced May 2015.

Comments: 18 pages, 5 figures, In press for Nano Letters (DOI below)

Using polymer electrolyte gates to set-and-freeze threshold voltage and local potential in nanowire-based devices and thermoelectrics

Authors: Sofia Fahlvik Svensson, Adam M. Burke, Damon J. Carrad, Martin Leijnse, Heiner Linke, Adam P. Micolich

Abstract: We use the strongly temperature-dependent ionic mobility in polymer electrolytes to 'freeze in' specific ionic charge environments around a nanowire using a local wrap-gate geometry. This enables us to set both the threshold voltage for a conventional doped substrate gate and the local disorder potential at temperatures below 200 Kelvin, which we characterize in detail by combining conductance and… ▽ More We use the strongly temperature-dependent ionic mobility in polymer electrolytes to 'freeze in' specific ionic charge environments around a nanowire using a local wrap-gate geometry. This enables us to set both the threshold voltage for a conventional doped substrate gate and the local disorder potential at temperatures below 200 Kelvin, which we characterize in detail by combining conductance and thermovoltage measurements with modeling. Our results demonstrate that local polymer electrolyte gates are compatible with nanowire thermoelectrics, where they offer the advantage of a very low thermal conductivity, and hold great potential towards setting the optimal operating point for solid-state cooling applications. △ Less

Submitted 11 November, 2014; originally announced November 2014.

Comments: Published in Advanced Functional Materials. Includes colour versions of figures and supplementary information

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

Authors: D. J. Carrad, A. M. Burke, R. W. Lyttleton, H. J. Joyce, H. H. Tan, C. Jagadish, K. Storm, H. Linke, L. Samuelson, A. P. Micolich

Abstract: We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces… ▽ More We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices. △ Less

Submitted 7 April, 2014; originally announced April 2014.

Comments: 20 pages, 4 figures. Supplementary information available at Nano Letters or by contact with APM

Journal ref: Nano Letters 14, 94 (2014)

Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot

Authors: D. J. Carrad, A. M. Burke, O. Klochan, A. M. See, A. R. Hamilton, A. Rai, D. Reuter, A. D. Wieck, A. P. Micolich

Abstract: We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin temperatures. Recent experiments in electron quantum dots have shown that the MCF is sensitive to the disorder potential created by remote ionised impurities. We utilize this to study the temporal/thermal stability of Si accept… ▽ More We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin temperatures. Recent experiments in electron quantum dots have shown that the MCF is sensitive to the disorder potential created by remote ionised impurities. We utilize this to study the temporal/thermal stability of Si acceptors in p-type AlGaAs/GaAs heterostructures. In particular, we use a surface gate to cause charge migration between Si acceptor sites at T = 40 mK, and detect the ensuing changes in the disorder potential using the MCF. We show that Si acceptors are metastable at T = 40 mK and that raising the device to a temperature T = 4.2 K and returning to T = 40 mK is sufficient to produce complete decorrelation of the MCF. The same decorrelation occurs at T ~ 165 K for electron quantum dots; by comparing with the known trap energy for Si DX centers, we estimate that the shallow acceptor traps in our heterostructures have an activation energy EA ~ 3 meV. Our method can be used to study charge noise and dopant stability towards optimisation of semiconductor materials and devices. △ Less

Submitted 7 April, 2014; v1 submitted 5 December, 2013; originally announced December 2013.

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

Authors: D. J. Carrad, A. M. Burke, P. J. Reece, R. W. Lyttleton, D. E. J. Waddington, A. Rai, D. Reuter, A. D. Wieck, A. P. Micolich

Abstract: We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements, we show that while (NH4)2Sx treatment gives a 40 - 60 x increase in pho… ▽ More We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements, we show that while (NH4)2Sx treatment gives a 40 - 60 x increase in photoluminescence intensity for the (100) surface, an increase of only 2 - 3 x is obtained for the (311)A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311)A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311)A GaAs, and propose alternative strategies for passivation of this surface. △ Less

Submitted 8 July, 2013; v1 submitted 4 December, 2012; originally announced December 2012.

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

Authors: A. M. Burke, D. Waddington, D. Carrad, R. Lyttleton, H. H. Tan, P. J. Reece, O. Klochan, A. R. Hamilton, A. Rai, D. Reuter, A. D. Wieck, A. P. Micolich

Abstract: Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with/without insulated gates, aimed at understanding the origin of… ▽ More Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with/without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent `leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trap** and charge migration in the do** layer. Our results provide insights into the physics of Si acceptors in AlGaAs/GaAs heterostructures, including widely-debated acceptor complexes such as Si-X. We propose methods for mitigating the gate hysteresis, including poisoning the modulation-do** layer with deep-trap** centers (e.g., by co-do** with transition metal species), and replacing the Schottky gates with degenerately-doped semiconductor gates to screen the conducting channel from GaAs surface-states. △ Less

Submitted 15 September, 2012; v1 submitted 12 July, 2012; originally announced July 2012.

Comments: 15 pages, 11 figures; Accepted for Physical Review B