Showing 1–12 of 12 results for author: Carnevale, S

In the Shadow of Smith`s Invisible Hand: Risks to Economic Stability and Social Wellbeing in the Age of Intelligence

Authors: Jo-An Occhipinti, William Hynes, Ante Prodan, Harris A. Eyre, Roy Green, Sharan Burrow, Marcel Tanner, John Buchanan, Goran Ujdur, Frederic Destrebecq, Christine Song, Steven Carnevale, Ian B. Hickie, Mark Heffernan

Abstract: Work is fundamental to societal prosperity and mental health, providing financial security, identity, purpose, and social integration. The emergence of generative artificial intelligence (AI) has catalysed debate on job displacement. Some argue that many new jobs and industries will emerge to offset the displacement, while others foresee a widespread decoupling of economic productivity from human… ▽ More Work is fundamental to societal prosperity and mental health, providing financial security, identity, purpose, and social integration. The emergence of generative artificial intelligence (AI) has catalysed debate on job displacement. Some argue that many new jobs and industries will emerge to offset the displacement, while others foresee a widespread decoupling of economic productivity from human input threatening jobs on an unprecedented scale. This study explores the conditions under which both may be true and examines the potential for a self-reinforcing cycle of recessionary pressures that would necessitate sustained government intervention to maintain job security and economic stability. A system dynamics model was developed to undertake ex ante analysis of the effect of AI-capital deepening on labour underutilisation and demand in the economy. Results indicate that even a moderate increase in the AI-capital-to-labour ratio could increase labour underutilisation to double its current level, decrease per capita disposable income by 26% (95% interval, 20.6% - 31.8%), and decrease the consumption index by 21% (95% interval, 13.6% - 28.3%) by mid-2050. To prevent a reduction in per capita disposable income due to the estimated increase in underutilization, at least a 10.8-fold increase in the new job creation rate would be necessary. Results demonstrate the feasibility of an AI-capital- to-labour ratio threshold beyond which even high rates of new job creation cannot prevent declines in consumption. The precise threshold will vary across economies, emphasizing the urgent need for empirical research tailored to specific contexts. This study underscores the need for governments, civic organisations, and business to work together to ensure a smooth transition to an AI- dominated economy to safeguard the Mental Wealth of nations. △ Less

Submitted 22 April, 2024; originally announced July 2024.

Comments: 10 pages, 5 figures, 1 table, an Appendix

Demonstration of RIP gates in a quantum processor with negligible transverse coupling

Authors: Muir Kumph, James Raftery, Aaron Finck, John Blair, April Carniol, Santino Carnevale, George A Keefe, Vincent Arena, Shawn Hall, David McKay, George Stehlik

Abstract: Here, we report the experimental demonstration of a novel multi-mode linear bus interferometer (LBI) coupler in a six qubit superconducting quantum processor. A key feature of this coupler is an engineered multi-path interference which eliminates transverse coupling between qubits over a wide frequency range. This negligible static coupling is achieved without any flux bias tuning, and greatly red… ▽ More Here, we report the experimental demonstration of a novel multi-mode linear bus interferometer (LBI) coupler in a six qubit superconducting quantum processor. A key feature of this coupler is an engineered multi-path interference which eliminates transverse coupling between qubits over a wide frequency range. This negligible static coupling is achieved without any flux bias tuning, and greatly reduces the impact of qubit frequency collisions. We achieve good simultaneous single qubit gate operation and low ZZ rates (below 600 Hz) across the device without staggering qubit frequencies, even in cases where qubits are as close as 10 MHz. Multi-qubit interactions are still possible through the coupler using microwave-driven resonator induced phase gates, which we utilize to demonstrate simultaneous two qubit gates with fidelities as high as 99.4% △ Less

Submitted 17 June, 2024; originally announced June 2024.

Spectator Errors in Tunable Coupling Architectures

Authors: D. M. Zajac, J. Stehlik, D. L. Underwood, T. Phung, J. Blair, S. Carnevale, D. Klaus, G. A. Keefe, A. Carniol, M. Kumph, Matthias Steffen, O. E. Dial

Abstract: The addition of tunable couplers to superconducting quantum architectures offers significant advantages for scaling compared to fixed coupling approaches. In principle, tunable couplers allow for exact cancellation of qubit-qubit coupling through the interference of two parallel coupling pathways between qubits. However, stray microwave couplings can introduce additional pathways which complicate… ▽ More The addition of tunable couplers to superconducting quantum architectures offers significant advantages for scaling compared to fixed coupling approaches. In principle, tunable couplers allow for exact cancellation of qubit-qubit coupling through the interference of two parallel coupling pathways between qubits. However, stray microwave couplings can introduce additional pathways which complicate the interference effect. Here we investigate the primary spectator induced errors of the bus below qubit (BBQ) architecture in a six qubit device. We identify the key design parameters which inhibit ideal cancellation and demonstrate that dynamic cancellation pulses can further mitigate spectator errors. △ Less

Submitted 25 August, 2021; originally announced August 2021.

Quantum crosstalk cancellation for fast entangling gates and improved multi-qubit performance

Authors: K. X. Wei, E. Magesan, I. Lauer, S. Srinivasan, D. F. Bogorin, S. Carnevale, G. A. Keefe, Y. Kim, D. Klaus, W. Landers, N. Sundaresan, C. Wang, E. J. Zhang, M. Steffen, O. E. Dial, D. C. McKay, A. Kandala

Abstract: Quantum computers built with superconducting artificial atoms already stretch the limits of their classical counterparts. While the lowest energy states of these artificial atoms serve as the qubit basis, the higher levels are responsible for both a host of attractive gate schemes as well as generating undesired interactions. In particular, when coupling these atoms to generate entanglement, the h… ▽ More Quantum computers built with superconducting artificial atoms already stretch the limits of their classical counterparts. While the lowest energy states of these artificial atoms serve as the qubit basis, the higher levels are responsible for both a host of attractive gate schemes as well as generating undesired interactions. In particular, when coupling these atoms to generate entanglement, the higher levels cause shifts in the computational levels that leads to unwanted $ZZ$ quantum crosstalk. Here, we present a novel technique to manipulate the energy levels and mitigate this crosstalk via a simultaneous AC Stark effect on coupled qubits. This breaks a fundamental deadlock between qubit-qubit coupling and crosstalk, leading to a 90ns CNOT with a gate error of (0.19 $\pm$ 0.02) $\%$ and the demonstration of a novel CZ gate with fixed-coupling single-junction transmon qubits. Furthermore, we show a definitive improvement in circuit performance with crosstalk cancellation over seven qubits, demonstrating the scalability of the technique. This work paves the way for superconducting hardware with faster gates and greatly improved multi-qubit circuit fidelities. △ Less

Submitted 1 June, 2021; originally announced June 2021.

Comments: 8 pages, 5 figures plus Supplementary Information (8 pages, 7 figures)

Journal ref: Phys. Rev. Lett. 129, 060501 (2022)

Suppressed crosstalk between two-junction superconducting qubits with mode-selective exchange coupling

Authors: A. D. K. Finck, S. Carnevale, D. Klaus, C. Scerbo, J. Blair, T. G. McConkey, C. Kurter, A. Carniol, G. Keefe, M. Kumph, O. E. Dial

Abstract: Fixed-frequency qubits can suffer from always-on interactions that inhibit independent control. Here, we address this issue by experimentally demonstrating a superconducting architecture using qubits that comprise of two capacitively-shunted Josephson junctions connected in series. Historically known as tunable coupling qubits (TCQs), such two-junction qubits support two modes with distinct freque… ▽ More Fixed-frequency qubits can suffer from always-on interactions that inhibit independent control. Here, we address this issue by experimentally demonstrating a superconducting architecture using qubits that comprise of two capacitively-shunted Josephson junctions connected in series. Historically known as tunable coupling qubits (TCQs), such two-junction qubits support two modes with distinct frequencies and spatial symmetries. By selectively coupling only one type of mode and using the other as our computational basis, we greatly suppress crosstalk between the data modes while permitting all-microwave two-qubit gates. △ Less

Submitted 22 November, 2021; v1 submitted 24 May, 2021; originally announced May 2021.

Journal ref: Phys. Rev. Applied 16, 054041 (2021)

Merged-Element Transmons: Design and Qubit Performance

Authors: H. J. Mamin, E. Huang, S. Carnevale, C. T. Rettner, N. Arellano, M. H. Sherwood, C. Kurter, B. Trimm, M. Sandberg, R. M. Shelby, M. A. Mueed, B. A. Madon, A. Pushp, M. Steffen, D. Rugar

Abstract: We have demonstrated a novel type of superconducting transmon qubit in which a Josephson junction has been engineered to act as its own parallel shunt capacitor. This merged-element transmon (MET) potentially offers a smaller footprint and simpler fabrication than conventional transmons. Because it concentrates the electromagnetic energy inside the junction, it reduces relative electric field part… ▽ More We have demonstrated a novel type of superconducting transmon qubit in which a Josephson junction has been engineered to act as its own parallel shunt capacitor. This merged-element transmon (MET) potentially offers a smaller footprint and simpler fabrication than conventional transmons. Because it concentrates the electromagnetic energy inside the junction, it reduces relative electric field participation from other interfaces. By combining micrometer-scale Al/AlOx/Al junctions with long oxidations and novel processing, we have produced functional devices with $E_{J}$/$E_{C}$ in the low transmon regime ($E_{J}$/$E_{C}$ $\lesssim$30). Cryogenic I-V measurements show sharp dI/dV structure with low sub-gap conduction. Qubit spectroscopy of tunable versions show a small number of avoided level crossings, suggesting the presence of two-level systems (TLS). We have observed mean T1 times typically in the range of 10-90 microseconds, with some annealed devices exhibiting T1 > 100 microseconds over several hours. The results suggest that energy relaxation in conventional, small-junction transmons is not limited by junction loss. △ Less

Submitted 13 August, 2021; v1 submitted 16 March, 2021; originally announced March 2021.

Comments: 7 pages, 4 figures Added references Performed minor editing for clarity Made minor formatting changes to figures

Journal ref: Phys. Rev. Applied 16, 024023 (2021)

Tunable Coupling Architecture for Fixed-frequency Transmons

Authors: J. Stehlik, D. M. Zajac, D. L. Underwood, T. Phung, J. Blair, S. Carnevale, D. Klaus, G. A. Keefe, A. Carniol, M. Kumph, Matthias Steffen, O. E. Dial

Abstract: Implementation of high-fidelity two-qubit operations is a key ingredient for scalable quantum error correction. In superconducting qubit architectures tunable buses have been explored as a means to higher fidelity gates. However, these buses introduce new pathways for leakage. Here we present a modified tunable bus architecture appropriate for fixed-frequency qubits in which the adiabaticity restr… ▽ More Implementation of high-fidelity two-qubit operations is a key ingredient for scalable quantum error correction. In superconducting qubit architectures tunable buses have been explored as a means to higher fidelity gates. However, these buses introduce new pathways for leakage. Here we present a modified tunable bus architecture appropriate for fixed-frequency qubits in which the adiabaticity restrictions on gate speed are reduced. We characterize this coupler on a range of two-qubit devices achieving a maximum gate fidelity of $99.85\%$. We further show the calibration is stable over one day. △ Less

Submitted 19 January, 2021; originally announced January 2021.

Journal ref: Phys. Rev. Lett. 127, 080505 (2021)

Demonstration of a High-Fidelity CNOT for Fixed-Frequency Transmons with Engineered ZZ Suppression

Authors: A. Kandala, K. X. Wei, S. Srinivasan, E. Magesan, S. Carnevale, G. A. Keefe, D. Klaus, O. Dial, D. C. McKay

Abstract: Improving two-qubit gate performance and suppressing crosstalk are major, but often competing, challenges to achieving scalable quantum computation. In particular, increasing the coupling to realize faster gates has been intrinsically linked to enhanced crosstalk due to unwanted two-qubit terms in the Hamiltonian. Here, we demonstrate a novel coupling architecture for transmon qubits that circumve… ▽ More Improving two-qubit gate performance and suppressing crosstalk are major, but often competing, challenges to achieving scalable quantum computation. In particular, increasing the coupling to realize faster gates has been intrinsically linked to enhanced crosstalk due to unwanted two-qubit terms in the Hamiltonian. Here, we demonstrate a novel coupling architecture for transmon qubits that circumvents the standard relationship between desired and undesired interaction rates. Using two fixed frequency coupling elements to tune the dressed level spacings, we demonstrate an intrinsic suppression of the static $ZZ$, while maintaining large effective coupling rates. Our architecture reveals no observable degradation of qubit coherence ($T_1,T_2 > 100~μs$) and, over a factor of 6 improvement in the ratio of desired to undesired coupling. Using the cross-resonance interaction we demonstrate a 180~ns single-pulse CNOT gate, and measure a CNOT fidelity of 99.77(2)$\%$ from interleaved randomized benchmarking. △ Less

Submitted 13 November, 2020; originally announced November 2020.

Comments: 5 pages, 3 figures plus supplement (4 pages, 3 figures)

Journal ref: Phys. Rev. Lett. 127, 130501 (2021)

Semiconductor Nanowire Light Emitting Diodes Grown on Metal: A Direction towards Large Scale Fabrication of Nanowire Devices

Authors: A. T. M. Golam Sarwar, Santino D. Carnevale, Fan Yang, Thomas F. Kent, John J. Jamison, David W. McComb, Roberto C. Myers

Abstract: Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating dislocations. The resulting nanowires are used to fabricate light emitting diodes (LEDs), lasers, solar cells and sensors. However, expensive single crystalline su… ▽ More Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating dislocations. The resulting nanowires are used to fabricate light emitting diodes (LEDs), lasers, solar cells and sensors. However, expensive single crystalline substrates are commonly used as substrates for nanowire heterostructures as well as for epitaxial devices, which limits the manufacturability of nanowire devices. Here, we demonstrate nanowire LEDs directly grown and electrically integrated on metal. Optical and structural measurements reveal high-quality, vertically-aligned GaN nanowires on molybdenum and titanium films. Transmission electron microscopy confirms the composition variation in the polarization-graded AlGaN nanowire LEDs. Blue to green electroluminescence is observed from InGaN quantum well active regions, while GaN active regions exhibit ultraviolet emission. These results demonstrate a pathway for large-scale fabrication of solid state lighting and optoelectronics on metal foils or sheets. △ Less

Submitted 11 June, 2015; originally announced June 2015.

Comments: 18 pages, 5 figures

Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN

Authors: A. T. M. Golam Sarwar, Santino D. Carnevale, Thomas F. Kent, Fan Yang, David W. McComb, Roberto C. Myers

Abstract: We report a systematic study of p-type polarization induced do** in graded AlGaN nanowire light emitting diodes grown on silicon wafers by plasma-assisted molecular beam epitaxy. The composition gradient in the p-type base is varied in a set of samples from 0.7 %Al/nm to 4.95 %Al/nm corresponding to negative bound polarization charge densities of 2.2x10^18 cm^-3 to 1.6x10^19 cm^-3. Capacitance m… ▽ More We report a systematic study of p-type polarization induced do** in graded AlGaN nanowire light emitting diodes grown on silicon wafers by plasma-assisted molecular beam epitaxy. The composition gradient in the p-type base is varied in a set of samples from 0.7 %Al/nm to 4.95 %Al/nm corresponding to negative bound polarization charge densities of 2.2x10^18 cm^-3 to 1.6x10^19 cm^-3. Capacitance measurements and energy band modeling reveal that for gradients greater than or equal to 1.30 %Al/nm, the deep donor concentration is negligible and free hole concentrations roughly equal to the bound polarization charge density are achieved up to 1.6x10^19 cm^-3 at a gradient of 4.95 %Al/nm. Accurate grading lengths in the p- and n-side of the pn-junction are extracted from scanning transmission electron microscopy images and are used to support energy band calculation and capacitance modeling. These results demonstrate the robust nature of p-type polarization do** in nanowires and put an upper bound on the magnitude of deep donor compensation. △ Less

Submitted 21 October, 2014; originally announced October 2014.

Comments: 12 pages of text, 3 tables, and 3 figures

Journal ref: Appl. Phys. Lett. 106, 032102 (2015)

Atomically Sharp 318nm Gd:AlGaN Ultraviolet Light Emitting Diodes on Si with Low Threshold Voltage

Authors: Thomas F. Kent, Santino D. Carnevale, Roberto C. Myers

Abstract: Self assembled AlGaN polarization-induced nanowire light emitting diodes (PINLEDs) with Gd-doped AlN active regions are prepared by plasma-assisted molecular beam epitaxy on Si substrates. Atomically sharp electroluminescence (EL) from Gd intra-f-shell electronic transitions at 313 nm and 318 nm are observed under forward biases above 5V. The intensity of the Gd 4f EL scales linearly with current… ▽ More Self assembled AlGaN polarization-induced nanowire light emitting diodes (PINLEDs) with Gd-doped AlN active regions are prepared by plasma-assisted molecular beam epitaxy on Si substrates. Atomically sharp electroluminescence (EL) from Gd intra-f-shell electronic transitions at 313 nm and 318 nm are observed under forward biases above 5V. The intensity of the Gd 4f EL scales linearly with current density and increases at lower temperature. The low electric field excitation of Gd 4f EL in PINLEDs is contrasted with high field excitation in Gd:AlGaN MIS nanowire devices (metal/Gd:AlN/polarization induced n-AlGaN) where it is concluded that PINLED devices offer over a three fold enhancement in 4f EL intensity at a given device bias. △ Less

Submitted 23 May, 2013; v1 submitted 29 March, 2013; originally announced March 2013.

Comments: 5 pages and 3 figures. Copyright, American Institute of Physics, 2013. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

Journal ref: Appl. Phys. Lett. 102, 201114 (2013)

Coaxial Nanowire Resonant Tunneling Diodes from non-polar AlN/GaN on Silicon

Authors: S. D. Carnevale, C. Marginean, P. J. Phillips, T. F. Kent, A. T. M. G. Sarwar, M. J. Mills, R. C. Myers

Abstract: Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111) substrates. By using a coaxial geometry these devices take advantage of non-polar (m-plane) nanowire sidewalls. Device modeling predicts non-polar orientation should enhance resonant tunneling compared to a polar structure and that AlN double barriers… ▽ More Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111) substrates. By using a coaxial geometry these devices take advantage of non-polar (m-plane) nanowire sidewalls. Device modeling predicts non-polar orientation should enhance resonant tunneling compared to a polar structure and that AlN double barriers will lead to higher peak-to-valley current ratios compared to AlGaN barriers. Electrical measurements of ensembles of nanowires show negative differential resistance appearing only at cryogenic temperature. Individual nanowire measurements show negative differential resistance at room temperature with peak current density of 5*10^5 A/cm^2. △ Less

Submitted 23 March, 2012; v1 submitted 27 February, 2012; originally announced February 2012.

Comments: 10 pages, 4 figures

Journal ref: Appl. Phys. lett. 100, 142115 (2012)