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Enhanced Planar Antenna Efficiency Through Magnetic Thin-Films
Authors:
Zhi Yao,
Sidhant Tiwari,
Joseph Schneider,
Robert N. Candler,
Gregory P. Carman,
Yuanxun Ethan Wang
Abstract:
This work proposes to use magnetic material as the substrate of planar antennas to overcome the platform effect caused by the conducting ground plane. The upper bound of the radiation efficiency of an electric-current-driven low-profile antenna is theoretically derived, which is inversely proportional to the Gilbert dam** factor of the magnetic material. Meanwhile, the improvement of radiation d…
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This work proposes to use magnetic material as the substrate of planar antennas to overcome the platform effect caused by the conducting ground plane. The upper bound of the radiation efficiency of an electric-current-driven low-profile antenna is theoretically derived, which is inversely proportional to the Gilbert dam** factor of the magnetic material. Meanwhile, the improvement of radiation due to the use of magnetic material is demonstrated by a three-dimensional (3D) multiphysics and multiscale time-domain model. The simulation results match the theoretical derivation, showing 25% radiation efficiency from a planar antenna backed by a FeGaB thin film with 2.56 um thickness. Furthermore, for conductive ferromagnetic materials, it is shown that the eddy current loss can be well suppressed by laminating the thin film into multiple layers. The radiation efficiency of the modeled antenna with a conductive ferromagnetic substrate is improved from 2.2% to 11.8% by dividing the substrate into 10 layers, with a ferromagnetic material fill factor of 93%.
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Submitted 10 December, 2021;
originally announced January 2022.
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Effective strain manipulation of the antiferromagnetic state of polycrystalline NiO
Authors:
A. Barra,
A. Ross,
O. Gomonay,
L. Baldrati,
A. Chavez,
R. Lebrun,
J. D. Schneider,
P. Shirazi,
Q. Wang,
J. Sinova,
G. P. Carman,
M. Kläui
Abstract:
As a candidate material for applications such as magnetic memory, polycrystalline antiferromagnets offer the same robustness to external magnetic fields, THz spin dynamics, and lack of stray field as their single crystalline counterparts, but without the limitation of epitaxial growth and lattice matched substrates. Here, we first report the detection of the average Neel vector orientiation in pol…
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As a candidate material for applications such as magnetic memory, polycrystalline antiferromagnets offer the same robustness to external magnetic fields, THz spin dynamics, and lack of stray field as their single crystalline counterparts, but without the limitation of epitaxial growth and lattice matched substrates. Here, we first report the detection of the average Neel vector orientiation in polycrystalline NiO via spin Hall magnetoresistance (SMR). Secondly, by applying strain through a piezo-electric substrate, we reduce the critical magnetic field required to reach a saturation of the SMR signal, indicating a change of the anisotropy. Our results are consistent with polycrystalline NiO exhibiting a positive sign of the in-plane magnetostriction. This method of anisotropy-tuning offers an energy efficient, on-chip alternative to manipulate a polycrystalline antiferromagnets magnetic state.
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Submitted 24 March, 2021;
originally announced March 2021.
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Magnetoelastic and Magnetostrictive Properties of Co$_2$XAl Heusler Compounds
Authors:
Farzad Mahfouzi,
Gregory P. Carman,
Nicholas Kioussis
Abstract:
We present a comprehensive first principles electronic structure study of the magnetoelastic and magnetostrictive properties in the Co-based Co$_2$XAl (X = V, Ti, Cr, Mn, Fe) full Heusler compounds. In addition to the commonly used total energy approach, we employ torque method to calculate the magnetoelastic tensor elements. We show that the torque based methods are in general computationally mor…
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We present a comprehensive first principles electronic structure study of the magnetoelastic and magnetostrictive properties in the Co-based Co$_2$XAl (X = V, Ti, Cr, Mn, Fe) full Heusler compounds. In addition to the commonly used total energy approach, we employ torque method to calculate the magnetoelastic tensor elements. We show that the torque based methods are in general computationally more efficient, and allow to unveil the atomic- and orbital-contributions to the magnetoelastic constants in an exact manner, as opposed to the conventional approaches based on second order perturbation with respect to the spin-orbit coupling. The magnetostriction constants are in good agreement with available experimental data. The results reveal that the main contribution to the magnetostriction constants, $λ_{100}$ and $λ_{111}$, arises primarily from the strained-induced modulation of the $\langle d_{x^2-y^2}|\hat{L}_z|d_{xy}\rangle$ and $\langle d_{z^2}|\hat{L}_x|d_{yz}\rangle$ spin orbit coupling matrix elements, respectively, of the Co atoms.
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Submitted 7 August, 2020;
originally announced August 2020.
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Chiral symmetry breaking for deterministic switching of perpendicular magnetization by spin-orbit torque
Authors:
Hao Wu,
John Nance,
Seyed Armin Razavi,
David Lujan,
Bingqian Dai,
Yuxiang Liu,
Haoran He,
Baoshan Cui,
Di Wu,
Kin Wong,
Kemal Sobotkiewich,
Xiaoqin Li,
Gregory P. Carman,
Kang L. Wang
Abstract:
Symmetry breaking is a characteristic to determine which branch of a bifurcation system follows upon crossing a critical point. Specifically, in spin-orbit torque (SOT) devices, a fundamental question arises: how to break the symmetry of the perpendicular magnetic moment by the in-plane spin polarization? Here, we show that the chiral symmetry breaking by the DMI can induce the deterministic SOT s…
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Symmetry breaking is a characteristic to determine which branch of a bifurcation system follows upon crossing a critical point. Specifically, in spin-orbit torque (SOT) devices, a fundamental question arises: how to break the symmetry of the perpendicular magnetic moment by the in-plane spin polarization? Here, we show that the chiral symmetry breaking by the DMI can induce the deterministic SOT switching of the perpendicular magnetization. By introducing a gradient of saturation magnetization or magnetic anisotropy, non-collinear spin textures are formed by the gradient of effective SOT strength, and thus the chiral symmetry of the SOT-induced spin textures is broken by the DMI, resulting in the deterministic magnetization switching. We introduce a strategy to induce an out-of-plane (z) gradient of magnetic properties, as a practical solution for the wafer-scale manufacture of SOT devices.
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Submitted 28 April, 2020;
originally announced April 2020.
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Modeling Incoherent Strain Mediated Multiferroic Bennett Clocking
Authors:
12111 **-Zhao Hu,
John P. Domann,
Qianchang Wang,
Cheng-Yen Liang,
Scott Keller,
Gregory P. Carman,
Abdon E. Sepulveda
Abstract:
Strain mediated Bennett clocking has only recently been experimentally demonstrated and suffered from high error rates. Most models used to explain this behavior are macrospin models. Predictions of these models do not match experimental designs since they consider all spins rotating coherently and no magnetoelastic strain feedback. In this paper a fully coupled nonlinear model (LLG plus elastodyn…
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Strain mediated Bennett clocking has only recently been experimentally demonstrated and suffered from high error rates. Most models used to explain this behavior are macrospin models. Predictions of these models do not match experimental designs since they consider all spins rotating coherently and no magnetoelastic strain feedback. In this paper a fully coupled nonlinear model (LLG plus elastodynamics) was used to simulate voltage induced Bennett clocking. This modelling captures the full spin dynamics as well as shape anisotropy. Two materials were studied (Ni and Terfenol-D) which have very different exchange lengths. The simulation results show that incoherent rotation may occur due to the uniaxial nature of the magnetoelastic coupling.
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Submitted 6 January, 2020;
originally announced January 2020.
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Strain-mediated Symmetry Breaking Switch with Perpendicular Magnetic Anisotropy
Authors:
Ruoda Zheng,
**-Zhao Hu,
Qianchang Wang,
Victor Estrada,
Gregory P. Carman,
Abdon E. Sepulveda
Abstract:
Magnetic switch with perpendicular magnetic anisotropy (PMA) is a promising method for controlling magnetization in several applications like magnetic tunnel junction and magnetic memory. However, incoherence happens during the switch process and lower the switch frequency of the magnetic bits. Symmetry broking can help solve this problem. Here, we present a field-free method for the symmetry brok…
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Magnetic switch with perpendicular magnetic anisotropy (PMA) is a promising method for controlling magnetization in several applications like magnetic tunnel junction and magnetic memory. However, incoherence happens during the switch process and lower the switch frequency of the magnetic bits. Symmetry broking can help solve this problem. Here, we present a field-free method for the symmetry broking and then increase the switch speed of the magnetization. A strain-mediated method with geometric asymmetry is presented here. In this work, we build a finite element model that consists a 50 nanometer diameter nanodisk with a varied thickness on the top of a 50 nanometer thick PZT (Pby[ZrxTi1-x]O3) thin film. The results show a 66% faster switch than symmetry PMA switching (0.85 nanosecond to 0.29 nanosecond) under same energy consumption. Finally, we explore the mechanism of the symmetry broking of varying thickness nanodot with calculating the energy profile.
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Submitted 20 January, 2020; v1 submitted 3 January, 2020;
originally announced January 2020.
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Brillouin-Mandelstam Spectroscopy of Stress-Modulated Spatially Confined Spin Waves in Ni Thin Films on Piezoelectric Heterostructures
Authors:
Fariborz Kargar,
Michael Balinskiy,
Howard Chiang,
Andres Chavez,
John Nance,
Alexander Khitun,
Gregory P. Carman,
Alexander A. Balandin
Abstract:
We report results of micro-Brillouin-Mandelstam light scattering spectroscopy of thermal magnons in the two-phase synthetic multiferroic structure consisting of a piezoelectric (PMN-PT) substrate and a Ni thin film with the thickness of 64 nm. The experimental data reveal the first two modes of the perpendicular standing spin waves (PSSW) spatially confined across the Ni thin film. A theoretical a…
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We report results of micro-Brillouin-Mandelstam light scattering spectroscopy of thermal magnons in the two-phase synthetic multiferroic structure consisting of a piezoelectric (PMN-PT) substrate and a Ni thin film with the thickness of 64 nm. The experimental data reveal the first two modes of the perpendicular standing spin waves (PSSW) spatially confined across the Ni thin film. A theoretical analysis of the frequency dependence of the PSSW peaks on the external magnetic field reveals the asymmetric boundary condition, i.e. pinning, for variable magnetization at different surfaces of the Ni thin film. The strain field induced by applying DC voltage to PMN-PT substrate leads to a down shift of PSSW mode frequency owing to the magneto-elastic effect in Ni, and corresponding changes in the spin wave resonance conditions. The observed non-monotonic dependence of the PSSW frequency on DC voltage is related to an abrupt change of the pinning parameter at certain values of the voltage. The obtained results are important for understanding the thermal magnon spectrum in ferromagnetic films and development of the low-power spin-wave devices.
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Submitted 21 April, 2019;
originally announced April 2019.
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Strain control of the Neel vector in Mn-based antiferromagnets
Authors:
In Jun Park,
Taehwan Lee,
Protik Das,
Bishwajit Debnath,
Greg P. Carman,
Roger K. Lake
Abstract:
Control of the Neel vector in antiferromagnetic materials is one of the challenges preventing their use as active device components. Several methods have been investigated such as exchange bias, electric current, and spin injection, but little is known about strain-mediated anisotropy. This study of the antiferromagnetic L10-type MnX alloys MnIr, MnRh, MnNi, MnPd, and MnPt shows that a small amoun…
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Control of the Neel vector in antiferromagnetic materials is one of the challenges preventing their use as active device components. Several methods have been investigated such as exchange bias, electric current, and spin injection, but little is known about strain-mediated anisotropy. This study of the antiferromagnetic L10-type MnX alloys MnIr, MnRh, MnNi, MnPd, and MnPt shows that a small amount of strain effectively rotates the direction of the Neel vector by 90 degrees for all of the materials. For MnIr, MnRh, MnNi, and MnPd, the Neel vector rotates within the basal plane. For MnPt, the Neel vector rotates from out-of-plane to in-plane under tensile strain. The effectiveness of strain control is quantified by a metric of efficiency and by direct calculation of the magnetostriction coefficients. The values of the magnetostriction coefficients are comparable with those from ferromagnetic materials. These results indicate that strain is a mechanism that can be exploited for control of the Neel vectors in this family of antiferromagnets.
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Submitted 1 March, 2019;
originally announced March 2019.
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Voltage Control of Magnetic Monopoles in Artificial Spin Ice
Authors:
Andres C. Chavez,
Anthony Barra,
Gregory P. Carman
Abstract:
Current research on artificial spin ice (ASI) systems has revealed unique hysteretic memory effects and mobile quasi-particle monopoles controlled by externally applied magnetic fields. Here, we numerically demonstrate a strain-mediated multiferroic approach to locally control the ASI monopoles. The magnetization of individual lattice elements is controlled by applying voltage pulses to the piezoe…
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Current research on artificial spin ice (ASI) systems has revealed unique hysteretic memory effects and mobile quasi-particle monopoles controlled by externally applied magnetic fields. Here, we numerically demonstrate a strain-mediated multiferroic approach to locally control the ASI monopoles. The magnetization of individual lattice elements is controlled by applying voltage pulses to the piezoelectric layer resulting in strain-induced magnetic precession timed for 180 degree reorientation. The model demonstrates localized voltage control to move the magnetic monopoles across lattice sites, in CoFeB, Ni, and FeGa based ASI$'$s. The switching is achieved at frequencies near ferromagnetic resonance and requires energies below 620 aJ. The results demonstrate that ASI monopoles can be efficiently and locally controlled with a strain-mediated multiferroic approach.
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Submitted 22 March, 2018;
originally announced March 2018.
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Multiferroic Micro-Motors with Deterministic Single Input Control
Authors:
John P. Domann,
Cai Chen,
Abdon E. Sepulveda,
Rob N. Candler,
Greg P. Carman
Abstract:
This paper describes a method for achieving continuous deterministic 360$^{\circ} $ magnetic moment rotations in single domain magnetoelastic discs, and examines the performance bounds for a mechanically lossless multiferroic bead-on-a-disc motor based on dipole coupling these discs to small magnetic nanobeads. The continuous magnetic rotations are attained by controlling the relative orientation…
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This paper describes a method for achieving continuous deterministic 360$^{\circ} $ magnetic moment rotations in single domain magnetoelastic discs, and examines the performance bounds for a mechanically lossless multiferroic bead-on-a-disc motor based on dipole coupling these discs to small magnetic nanobeads. The continuous magnetic rotations are attained by controlling the relative orientation of a four-fold anisotropy (e.g., cubic magnetocrystalline anisotropy) with respect to the two-fold magnetoelastic anisotropy. This approach produces continuous rotations from the quasi-static regime up through operational frequencies of several GHz. Driving strains of only $\approx$90 to 180 ppm are required for operation of motors using existing materials. The large operational frequencies and small sizes, with lateral dimensions of $\approx$100s of nanometers, produce large power densities for the rotary bead-on-a-disc motor, and a newly proposed linear variant, in a size range where power dense alternative technologies do not currently exist.
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Submitted 26 February, 2018;
originally announced February 2018.
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Strain-mediated spin-orbit torque switching for magnetic memory
Authors:
Qianchang Wang,
John Domann,
Guoqiang Yu,
Anthony Barra,
Kang L. Wang,
Gregory P. Carman
Abstract:
Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field for breaking lateral symmetry. Here we present a new approach of field-free deterministic perpendicular switching using a strain-mediated SOT switching method. T…
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Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field for breaking lateral symmetry. Here we present a new approach of field-free deterministic perpendicular switching using a strain-mediated SOT switching method. The strain-induced magnetoelastic anisotropy breaks the lateral symmetry, and the resulting symmetry-breaking is controllable. A finite element model and a macrospin model are used to numerically simulate the strain-mediated SOT switching mechanism. The results show that a relatively small voltage (${\pm}0.5$ V) along with a modest current ($3.5 \times 10^{7} A/cm^{2}$) can produce a 180° perpendicular magnetization reversal. The switching direction (up or down) is dictated by the voltage polarity (positive or negative) applied to the piezoelectric layer in the magnetoelastic/heavy metal/piezoelectric heterostructure. The switching speed can be as fast as 10 GHz. More importantly, this control mechanism can be potentially implemented in a magnetic random-access memory system with small footprint, high endurance and high tunnel magnetoresistance (TMR) readout ratio.
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Submitted 8 December, 2017;
originally announced February 2018.
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Magnetic microscopy and simulation of strain-mediated control of magnetization in Ni/PMN-PT nanostructures
Authors:
Ian Gilbert,
Andres C. Chavez,
Daniel T. Pierce,
John Unguris,
Wei-Yang Sun,
Cheng-Yen Liang,
Gregory P. Carman
Abstract:
Strain-mediated thin film multiferroics comprising piezoelectric/ferromagnetic heterostructures enable the electrical manipulation of magnetization with much greater efficiency than other methods; however, the investigation of nanostructures fabricated from these materials is limited. Here we characterize ferromagnetic Ni nanostructures grown on a ferroelectric PMN-PT substrate using scanning elec…
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Strain-mediated thin film multiferroics comprising piezoelectric/ferromagnetic heterostructures enable the electrical manipulation of magnetization with much greater efficiency than other methods; however, the investigation of nanostructures fabricated from these materials is limited. Here we characterize ferromagnetic Ni nanostructures grown on a ferroelectric PMN-PT substrate using scanning electron microscopy with polarization analysis (SEMPA) and micromagnetic simulations. The magnetization of the Ni nanostructures can be controlled with a combination of sample geometry and applied electric field, which strains the ferroelectric substrate and changes the magnetization via magnetoelastic coupling. We evaluate two types of simulations of ferromagnetic nanostructures on strained ferroelectric substrates: conventional micromagnetic simulations including a simple uniaxial strain, and coupled micromagnetic-elastodynamic simulations. Both simulations qualitatively capture the response of the magnetization changes produced by the applied strain, with the coupled solution providing more accurate representation.
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Submitted 3 October, 2016;
originally announced October 2016.
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Binary information propagation in circular magnetic nanodot arrays using strain induced magnetic anisotropy
Authors:
M. Salehi-Fashami,
M. Al-Rashid,
Wei-Yang Sun,
P. Nordeen,
S. Bandyopadhyay,
A. C. Chavez,
G. P. Carman,
J. Atulasimha
Abstract:
Nanomagnetic logic has emerged as a potential replacement for traditional CMOS-based logic because of superior energy-efficiency. One implementation of nanomagnetic logic employs shape-anisotropic (e.g. elliptical) ferromagnets (with two stable magnetization orientations) as binary switches that rely on dipole-dipole interaction to communicate binary information. Normally, circular nanomagnets are…
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Nanomagnetic logic has emerged as a potential replacement for traditional CMOS-based logic because of superior energy-efficiency. One implementation of nanomagnetic logic employs shape-anisotropic (e.g. elliptical) ferromagnets (with two stable magnetization orientations) as binary switches that rely on dipole-dipole interaction to communicate binary information. Normally, circular nanomagnets are incompatible with this approach since they lack distinct stable in-plane magnetization orientations to encode bits. However, circular magnetoelastic nanomagnets can be made bi-stable with a voltage induced anisotropic strain, which provides two significant advantages for nanomagnetic logic applications. First, the shape anisotropy energy barrier is eliminated which reduces the amount of energy to reorient the dipole. Second, the in-plane size can be reduced (~20nm) which was previously impossible due to thermal stability issues. In circular magnetoelastic nanomagnets, a voltage induced strain stabilizes the magnetization even at this size overcoming the thermal stability issue. In this paper, we analytically demonstrate a binary logic wire implemented with an array of circular nanomagnets that are clocked with voltage-induced strain applied by an underlying piezoelectric substrate. This leads to an energy-efficient logic paradigm orders of magnitude superior to existing CMOS-based logic that is scalable to dimensions substantially smaller than those for existing nanomagnetic logic approaches. The analytical approach is validated with experimental measurements conducted on dipole coupled Ni nanodots fabricated on a PMN-PT sample.
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Submitted 29 February, 2016;
originally announced February 2016.