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Spin-dependent $π$$π^{\ast}$ gap in graphene on a magnetic substrate
Authors:
P. M. Sheverdyaeva,
G. Bihlmayer,
E. Cappelluti,
D. Pacilé,
F. Mazzola,
N. Atodiresei,
M. Jugovac,
I. Grimaldi,
G. Contini,
A. K. Kundu,
I. Vobornik,
J. Fujii,
P. Moras,
C. Carbone,
L. Ferrari
Abstract:
We present a detailed analysis of the electronic properties of graphene/Eu/Ni(111). By using angle and spin-resolved photoemission spectroscopy and ab initio calculations, we show that the Eu-intercalation of graphene/Ni(111) restores the nearly freestanding dispersion of the $ππ^\ast$ Dirac cones at the K point with an additional lifting of the spin degeneracy due to the mixing of graphene and Eu…
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We present a detailed analysis of the electronic properties of graphene/Eu/Ni(111). By using angle and spin-resolved photoemission spectroscopy and ab initio calculations, we show that the Eu-intercalation of graphene/Ni(111) restores the nearly freestanding dispersion of the $ππ^\ast$ Dirac cones at the K point with an additional lifting of the spin degeneracy due to the mixing of graphene and Eu states. The interaction with the magnetic substrate results in a large spin-dependent gap in the Dirac cones with a topological nature characterized by a large Berry curvature, and a spin-polarized van Hove singularity, whose closeness to the Fermi level gives rise to a polaronic band.
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Submitted 27 April, 2024;
originally announced April 2024.
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Terahertz Saturable Absorption from Relativistic High-Temperature Thermodynamics in Black Phosphorus
Authors:
Nidhi Adhlakha,
Zeinab Ebrahimpour,
Paola Di Pietro,
Johannes Schmidt,
Federica Piccirilli,
Daniele Fausti,
Angela Montanaro,
Emmanuele Cappelluti,
Stefano Lupi,
Andrea Perucchi
Abstract:
Thanks to its tunable infrared band-gap and to its anisotropic conduction properties, black phosphorus represents a very unique 2D material, whose potential in the engineering of new devices still needs to be fully explored. We investigate here the nonlinear terahertz (THz) electrodynamics of black phosphorus along the more conducting armchair direction. Similarly to the case of other 2D systems l…
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Thanks to its tunable infrared band-gap and to its anisotropic conduction properties, black phosphorus represents a very unique 2D material, whose potential in the engineering of new devices still needs to be fully explored. We investigate here the nonlinear terahertz (THz) electrodynamics of black phosphorus along the more conducting armchair direction. Similarly to the case of other 2D systems like graphene and topological insulators, the THz saturable absorption properties of black phosphorus can be understood within a thermodynamic model by assuming a fast thermalization of the electron bath. While black phosphorus does not display the presence of massless fermions at ambient pressure and temperature, our analysis shows that its anomalous THz nonlinear properties can be accounted for by a relativistic massive Dirac dispersion, provided the Fermi temperature is low enough. An optimal tuning of the Fermi level therefore represents a strategy to engineer strong THz nonlinear response in other massive Dirac materials as in transition metal dichalchogenides or high-temperature superconductors.
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Submitted 20 October, 2023;
originally announced October 2023.
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Flat-band optical phonons in twisted bilayer graphene
Authors:
Emmanuele Cappelluti,
Jose Angel Silva-Guillén,
Habib Rostami,
Francisco Guinea
Abstract:
Twisting bilayer sheets of graphene have been proven to be an efficient way to manipulate the electronic Dirac-like properties, resulting in flat bands at magic angles. Inspired by the electronic model, we develop a continuum model for the lattice dynamics of twisted bilayer graphene and we show that a remarkable band flattening applies to almost all the high-frequency in-plane lattice vibration m…
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Twisting bilayer sheets of graphene have been proven to be an efficient way to manipulate the electronic Dirac-like properties, resulting in flat bands at magic angles. Inspired by the electronic model, we develop a continuum model for the lattice dynamics of twisted bilayer graphene and we show that a remarkable band flattening applies to almost all the high-frequency in-plane lattice vibration modes, including the valley Dirac phonon, valley optical phonon, and zone-center optical phonon bands. Utilizing an approximate approach, we estimate small but finite magic angles at which a vanishing phonon bandwidth is expected. In contrast to the electronic case, the existence of a restoring potential prohibits the emergence of a magic angle in a more accurate modeling. The predicted phonon band-flattening is highly tunable by the twist angle and this strong dependence is directly accessible by spectroscopic tools.
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Submitted 3 March, 2023;
originally announced March 2023.
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Properties and challenges of hot-phonon physics in metals: MgB$_2$ and other compounds
Authors:
Emmanuele Cappelluti,
Fabio Caruso,
Dino Novko
Abstract:
The ultrafast dynamics of electrons and collective modes in systems out of equilibrium is crucially governed by the energy transfer from electronic degrees of freedom, where the energy of the pump source is usually absorbed, to lattice degrees of freedom. In conventional metals such process leads to an overall heating of the lattice, usually described by an effective lattice temperature…
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The ultrafast dynamics of electrons and collective modes in systems out of equilibrium is crucially governed by the energy transfer from electronic degrees of freedom, where the energy of the pump source is usually absorbed, to lattice degrees of freedom. In conventional metals such process leads to an overall heating of the lattice, usually described by an effective lattice temperature $T_{\rm ph}$, until final equilibrium with all the degrees of freedom is reached. In specific materials, however, few lattice modes provide a preferential channel for the energy transfer, leading to a non-thermal distribution of vibrations and to the onset of {\em hot phonons}, i.e., lattice modes with a much higher population than the other modes. Hot phonons are usually encountered in semiconductors or semimetal compounds, like graphene, where the preferential channel towards hot modes is dictated by the reduced electronic phase space. Following a different path, the possibility of obtaining hot-phonon physics also in metals has been however also recently prompted in literature, as a result of a strong anisotropy of the electron-phonon (el-ph) coupling. In the present paper, taking MgB$_2$ as a representative example, we review the physical conditions that allow a hot-phonon scenario in metals with anisotropic el-ph coupling, and we discuss the observable fingerprints of hot phonons. Novel perspectives towards the prediction and experimental observation of hot phonons in other metallic compounds are also discussed.
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Submitted 17 February, 2022;
originally announced February 2022.
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Strain-driven chiral phonons in two-dimensional hexagonal materials
Authors:
Habib Rostami,
Francisco Guinea,
Emmanuele Cappelluti
Abstract:
Hexagonal two-dimensional materials with broken inversion symmetry (as BN or transition metal dichalcodenides) are known to sustain chiral phonons with finite angular momentum, adding a further useful degree of freedom to the extraordinary entangled (electrical, optical, magnetic and mechanical) properties of these compounds. However, because of lattice symmetry constraints, such chiral modes are…
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Hexagonal two-dimensional materials with broken inversion symmetry (as BN or transition metal dichalcodenides) are known to sustain chiral phonons with finite angular momentum, adding a further useful degree of freedom to the extraordinary entangled (electrical, optical, magnetic and mechanical) properties of these compounds. However, because of lattice symmetry constraints, such chiral modes are constrained to the corners of the Brillouin zone, allowing little freedom for manipulating the chiral features. In this work, we show how the application of uniaxial strain leads to the existence of new chiral modes in the vicinity of the zone center. We also show that such strain-induced chiral modes, unlike the ones pinned at the K points, can be efficiently manipulated by modifying the strain itself, which determines the position of these modes in the Brillouin Zone. The results of the present paper add a new technique for the engineering of the quantum properties of two-dimensional lattices.
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Submitted 13 January, 2022;
originally announced January 2022.
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Fingerprints of hot-phonon physics in time-resolved correlated quantum lattice dynamics
Authors:
E. Cappelluti,
D. Novko
Abstract:
The time dynamics of the energy flow from electronic to lattice degrees of freedom in pump-probe setups could be strongly affected by the presence of a hot-phonon bottleneck, which can sustain longer coherence of the optically excited electronic states. Recently, hot-phonon physics has been experimentally observed and theoretically described in MgB$_2$, the electron-phonon based superconductor wit…
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The time dynamics of the energy flow from electronic to lattice degrees of freedom in pump-probe setups could be strongly affected by the presence of a hot-phonon bottleneck, which can sustain longer coherence of the optically excited electronic states. Recently, hot-phonon physics has been experimentally observed and theoretically described in MgB$_2$, the electron-phonon based superconductor with $T_{\rm c}\approx 39$ K. By employing a combined ab-initio and quantum-field-theory approach and by taking MgB$_2$ as an example, here we propose a novel path for revealing the presence and characterizing the properties of hot phonons through a direct analysis of the information encoded in the lattice inter-atomic correlations. Such method exploits the underlying symmetry of the $E_{2g}$ hot modes characterized by a out-of-phase in-plane motion of the two boron atoms. Since hot phonons occur typically at high-symmetry points of the Brillouin zone, with specific symmetries of the lattice displacements, the present analysis is quite general and it could aid in revealing the hot-phonon physics in other promising materials, such as graphene, boron nitride, or black phosphorus.
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Submitted 4 January, 2022; v1 submitted 25 October, 2021;
originally announced October 2021.
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Many-Body Effects in Third Harmonic Generation of Graphene
Authors:
Habib Rostami,
Emmanuele Cappelluti
Abstract:
The low-energy (intraband) range of the third harmonic generation of graphene in the terahertz regime is governed by the dam** terms induced by the interactions. A controlled many-body description of the scattering processes is thus a compelling and desirable requirement. In this paper, using a Kadanoff-Baym approach, we systematically investigate the impact of many-body interaction on the third…
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The low-energy (intraband) range of the third harmonic generation of graphene in the terahertz regime is governed by the dam** terms induced by the interactions. A controlled many-body description of the scattering processes is thus a compelling and desirable requirement. In this paper, using a Kadanoff-Baym approach, we systematically investigate the impact of many-body interaction on the third-harmonic generation (THG) of graphene, taking elastic impurity scattering as a benchmark example. We predict the onset in the mixed inter-intraband regime of novel incoherent features driven by the interaction at four- and five-photon transition frequencies in the third-harmonic optical conductivity with a spectral weight proportional to the scattering rate.We show also that, in spite of the complex many-body physics, the purely intraband term governing the limit $ω\to 0$ resembles the constraints of the phenomenological model. We ascribe this agreement to the fulfilling of the conservation laws enforced by the conserving approach. The overlap with novel incoherent features and the impact of many-body driven multi-photon vertex couplings limit however severely the validity of phenomenological description.
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Submitted 7 November, 2020;
originally announced November 2020.
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Dominant Role of Two-Photon Vertex in Nonlinear Response of Dirac Materials
Authors:
Habib Rostami,
Emmanuele Cappelluti
Abstract:
Using a conserving Baym-Kadanoff approach, we present a fully compelling theory of nonlinear dc response of a Dirac system to electric fields in the presence of disorder scattering. We show that the nonlinear terms are strikingly ruled by the appearance of a dominant two-photon vertex which is absent at the bare level and finite even in the weak-coupling limit. Such two-photon vertex self-generati…
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Using a conserving Baym-Kadanoff approach, we present a fully compelling theory of nonlinear dc response of a Dirac system to electric fields in the presence of disorder scattering. We show that the nonlinear terms are strikingly ruled by the appearance of a dominant two-photon vertex which is absent at the bare level and finite even in the weak-coupling limit. Such two-photon vertex self-generation highlights the crucial role of the frequency and field dependence of the scattering rates in the nonlinear regime. Our study reveals a novel many-body mechanism in the nonlinear response of Dirac materials whose effects are predicted to be observable.
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Submitted 16 July, 2020;
originally announced July 2020.
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Ultrafast Hot Phonon Dynamics in MgB$_2$ Driven by Anisotropic Electron-Phonon Coupling
Authors:
D. Novko,
F. Caruso,
C. Draxl,
E. Cappelluti
Abstract:
The zone-center $E_{2g}$ modes play a crucial role in MgB$_2$, controlling the scattering mechanisms in the normal state as well the superconducting pairing. Here, we demonstrate via first-principles quantum-field theory calculations that, due to the anisotropic electron-phonon interaction, a $hot$-$phonon$ regime where the $E_{2g}$ phonons can achieve significantly larger effective populations th…
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The zone-center $E_{2g}$ modes play a crucial role in MgB$_2$, controlling the scattering mechanisms in the normal state as well the superconducting pairing. Here, we demonstrate via first-principles quantum-field theory calculations that, due to the anisotropic electron-phonon interaction, a $hot$-$phonon$ regime where the $E_{2g}$ phonons can achieve significantly larger effective populations than other modes, is triggered in MgB$_2$ by the interaction with an ultra-short laser pulse. Spectral signatures of this scenario in ultrafast pump-probe Raman spectroscopy are discussed in detail, revealing also a fundamental role of nonadiabatic processes in the optical features of the $E_{2g}$ mode.
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Submitted 30 January, 2020; v1 submitted 5 April, 2019;
originally announced April 2019.
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Giant Effective charges and Piezoelectricity in Gapped Graphene
Authors:
Oliviero Bistoni,
Paolo Barone,
Emmanuele Cappelluti,
Lara Benfatto,
Francesco Mauri
Abstract:
Since the first realization of reversible charge do** in graphene via field-effect devices, it has become evident how the induction a gap could further enhance its potential for technological applications. Here we show that the gap opening due to a sublattice symmetry breaking has also a profound impact on the polar response of graphene. By combining ab-initio calculations and analytical modelli…
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Since the first realization of reversible charge do** in graphene via field-effect devices, it has become evident how the induction a gap could further enhance its potential for technological applications. Here we show that the gap opening due to a sublattice symmetry breaking has also a profound impact on the polar response of graphene. By combining ab-initio calculations and analytical modelling we show that for realistic band-gap values ($Δ\lesssim 0.5$ eV) the piezoelectric coefficient and the Born effective charge of graphene attain a giant value, independent on the gap. In particular the piezoelectric coefficient per layer of gapped mono- and bilayer graphene is three times larger than that of a large-gap full polar insulator as hexagonal Boron Nitride (h-BN) monolayer, and 30\% larger than that of a polar semiconductor as MoS$_2$. This surprising result indicates that piezoelectric acoustic-phonons scattering can be relevant to model charge transport and charge-carrier relaxation in gated bilayer graphene. The independence of the piezoelectric coefficient and of the Born effective charge on the gap value follows from the connection between the polar response and the valley Chern number of gapped Dirac electrons, made possible by the effective gauge-field description of the electron-lattice/strain coupling in these systems. In the small gap limit, where the adiabatic ab-initio approximation fails, we implement analytically the calculation of the dynamical effective charge, and we establish a universal relation between the complex effective charge and the so-called Fano profile of the phonon optical peak. Our results provide a general theoretical framework to understand and compute the polar response in narrow-gap semiconductors, but may also be relevant for the contribution of piezoelectric scattering to the transport properties in Dirac-like systems.
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Submitted 22 March, 2019;
originally announced March 2019.
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Zero point motion and direct/indirect bandgap crossover in layered transition-metal dichalcogenides
Authors:
L. Ortenzi,
L. Pietronero,
E. Cappelluti
Abstract:
Two-dimensional transition-metal dichalcogendes $MX_2$ (es. MoS$_2$, WS$_2$, MoSe$_2$, \ldots) are among the most promising materials for bandgap engineering. Widely studied in these compounds, by means of ab-initio techniques, is the possibility of tuning the direct-indirect gap character by means of in-plane strain. In such kind of calculations however the lattice degrees of freedom are assumed…
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Two-dimensional transition-metal dichalcogendes $MX_2$ (es. MoS$_2$, WS$_2$, MoSe$_2$, \ldots) are among the most promising materials for bandgap engineering. Widely studied in these compounds, by means of ab-initio techniques, is the possibility of tuning the direct-indirect gap character by means of in-plane strain. In such kind of calculations however the lattice degrees of freedom are assumed to be classical and frozen. In this paper we investigate in details the dependence of the bandgap character (direct vs. indirect) on the out-of-plane distance $h$ between the two chalcogen planes in each $MX_2$ unit. Using DFT calculations, we show that the bandgap character is indeed highly sensitive on the parameter $h$, in monolayer as well as in bilayer and bulk compounds, permitting for instance the switching from indirect to direct gap and from indirect to direct gap in monolayer systems. This scenario is furthermore analyzed in the presence of quantum lattice fluctuation induced by the zero-point motion. On the basis of a quantum analysis, we argue that the direct-indirect bandgap transitions induced by the out-of-plane strain as well by the in-plane strain can be regarded more as continuous crossovers rather than as real sharp transitions. The consequences on the physical observables are discussed.
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Submitted 24 January, 2019;
originally announced January 2019.
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Scaling of the Fano effect of the in-plane Fe-As phonon and the superconducting critical temperature in Ba$_{1-x}$K$_{x}$Fe$_{2}$As$_{2}$
Authors:
B. Xu,
E. Cappelluti,
L. Benfatto,
B. P. P. Mallett,
P. Marsik,
E. Sheveleva,
F. Lyzwa,
Th. Wolf,
R. Yang,
X. G. Qiu,
Y. M. Dai,
H. H. Wen,
R. P. S. M. Lobo,
C. Bernhard
Abstract:
By means of infrared spectroscopy we determine the temperature-do** phase diagram of the Fano effect for the in-plane Fe-As stretching mode in Ba$_{1-x}$K$_{x}$Fe$_{2}$As$_{2}$. The Fano parameter $1/q^2$, which is a measure of the phonon coupling to the electronic particle-hole continuum, shows a remarkable sensitivity to the magnetic/structural orderings at low temperatures. More strikingly, a…
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By means of infrared spectroscopy we determine the temperature-do** phase diagram of the Fano effect for the in-plane Fe-As stretching mode in Ba$_{1-x}$K$_{x}$Fe$_{2}$As$_{2}$. The Fano parameter $1/q^2$, which is a measure of the phonon coupling to the electronic particle-hole continuum, shows a remarkable sensitivity to the magnetic/structural orderings at low temperatures. More strikingly, at elevated temperatures in the paramagnetic/tetragonal state we find a linear correlation between $1/q^2$ and the superconducting critical temperature $T_c$. Based on theoretical calculations and symmetry considerations, we identify the relevant interband transitions that are coupled to the Fe-As mode. In particular, we show that a sizable $xy$ orbital component at the Fermi level is fundamental for the Fano effect and possibly also for the superconducting pairing.
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Submitted 24 October, 2018;
originally announced October 2018.
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Helical metals and insulators and sheet singularity of inflated Berry monopole
Authors:
Habib Rostami,
Emmanuele Cappelluti,
Alexander V. Balatsky
Abstract:
We study the new phases of interacting Dirac matter that host novel Berry signatures. We predict a topological Lifshitz phase transition caused by the changes of a Dirac cone intersection from a semimetalic phase to helical insulating or metallic phases. These helical phases provide the examples of gapless topological phase where spectral gap is not required for a topological protection. To realiz…
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We study the new phases of interacting Dirac matter that host novel Berry signatures. We predict a topological Lifshitz phase transition caused by the changes of a Dirac cone intersection from a semimetalic phase to helical insulating or metallic phases. These helical phases provide the examples of gapless topological phase where spectral gap is not required for a topological protection. To realize nodal helical phases one would need to consider isotropic infinite-range inter-particle interaction. This interaction could emerge because of a momentum conserving scattering of electron from a bosonic mode. For repulsive/attractive interactions in density/pseudospin channel system undergoes a transition to helical insulator phase. For an attractive density-density interaction, a new metallic phase forms that hosts {\it nodal circle} and {\it nodal sphere} in two and three dimensions, respectively. A {\it sheet singularity} of Berry curvature is highlighted as a peculiar feature of the nodal sphere phase in 3D and represent the extension of the Berry monopole singularities into inflated monopole. To illustrate the properties of these helical phases we investigate Landau levels in both metallic and insulating phases. Our study provides an extension of the paradigm in the interacting Dirac matter and makes an interesting connection to inflated topological singularities in cosmology.
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Submitted 12 August, 2018;
originally announced August 2018.
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Impurity effects and bandgap-closing in massive Dirac systems
Authors:
Habib Rostami,
Emmanuele Cappelluti
Abstract:
We investigate the effects in the spectral properties of a massive Dirac system of the dynamical renormalization induce by disorder/impurity scattering within the self-consistent Born approximation. We show how that these effects leads to a remarkable closing of the bandgap edge. Above a critical value $U_c$ of the impurity scattering the gap eventually closes, giving rise a finite density of stat…
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We investigate the effects in the spectral properties of a massive Dirac system of the dynamical renormalization induce by disorder/impurity scattering within the self-consistent Born approximation. We show how that these effects leads to a remarkable closing of the bandgap edge. Above a critical value $U_c$ of the impurity scattering the gap eventually closes, giving rise a finite density of states at zero energy. We show that the bandgap closing stems from the quasi-particle dynamical renormalization and it is not associated with the vanishing of the effective massive term. Incoherent processes are fundamental to describe such physics.
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Submitted 11 October, 2017;
originally announced October 2017.
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Two-dimensional Rashba metals: unconventional low-temperature transport properties
Authors:
Valentina Brosco,
Claudio Grimaldi,
Emmanuele Cappelluti,
Lara Benfatto
Abstract:
Rashba spin-orbit coupling emerges in materials lacking of structural inversion symmetry, such as heterostructures, quantum wells, surface alloys and polar materials, just to mention few examples. It yields a coupling between the spin and momentum of electrons formally identical to that arising from the weakly-relativistic limit of the Dirac equation. The purpose of the present work is to give an…
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Rashba spin-orbit coupling emerges in materials lacking of structural inversion symmetry, such as heterostructures, quantum wells, surface alloys and polar materials, just to mention few examples. It yields a coupling between the spin and momentum of electrons formally identical to that arising from the weakly-relativistic limit of the Dirac equation. The purpose of the present work is to give an overview of the unconventional dc transport properties of two-dimensional metals with strong Rashba spin-orbit coupling, discussing in addition the effects of thermal broadening.
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Submitted 30 August, 2017;
originally announced August 2017.
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Real-time Observation of Phonon-Mediated $σ$-$π$ Interband Scattering in MgB2
Authors:
Edoardo Baldini,
Andreas Mann,
Lara Benfatto,
Emmanuele Cappelluti,
Angela Acocella,
Vyacheslav M. Silkin,
Sergey V. Eremeev,
Alexey B. Kuzmenko,
Simone Borroni,
Teng Tan,
Xiaoxiang Xi,
Francesco Zerbetto,
Roberto Merlin,
Fabrizio Carbone
Abstract:
In systems having an anisotropic electronic structure, such as the layered materials graphite, graphene and cuprates, impulsive light excitation can coherently stimulate specific bosonic modes, with exotic consequences for the emergent electronic properties. Here we show that the population of E$_{2g}$ phonons in the multiband superconductor MgB$_2$ can be selectively enhanced by femtosecond laser…
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In systems having an anisotropic electronic structure, such as the layered materials graphite, graphene and cuprates, impulsive light excitation can coherently stimulate specific bosonic modes, with exotic consequences for the emergent electronic properties. Here we show that the population of E$_{2g}$ phonons in the multiband superconductor MgB$_2$ can be selectively enhanced by femtosecond laser pulses, leading to a transient control of the number of carriers in the σ-electronic subsystem. The nonequilibrium evolution of the material optical constants is followed in the spectral region sensitive to both the a- and c-axis plasma frequencies and modeled theoretically, revealing the details of the $σ$-$π$ interband scattering mechanism in MgB$_2$.
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Submitted 17 January, 2017;
originally announced January 2017.
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Weak Localization in Electric-Double-Layer Gated Few-layer Graphene
Authors:
R. S. Gonnelli,
E. Piatti,
A. Sola,
M. Tortello,
F. Dolcini,
S. Galasso,
J. R. Nair,
C. Gerbaldi,
E. Cappelluti,
M. Bruna,
A. C. Ferrari
Abstract:
We induce surface carrier densities up to $\sim7\cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn of resistance that we attribute to weak localization in the diffusive regime. By studying this effect as a function of carrier density and with ab-initio calcul…
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We induce surface carrier densities up to $\sim7\cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn of resistance that we attribute to weak localization in the diffusive regime. By studying this effect as a function of carrier density and with ab-initio calculations we derive the dependence of transport, intervalley and phase coherence scattering lifetimes on total carrier density. We find that electron-electron scattering in the Nyquist regime is the main source of dephasing at temperatures lower than 30K in the $\sim10^{13}$cm$^{-2}$ to $\sim7 \cdot 10^{14}$cm$^{-2}$ range of carrier densities. With the increase of gate voltage, transport elastic scattering is dominated by the competing effects due to the increase in both carrier density and charged scattering centers at the surface. We also tune our devices into a crossover regime between weak and strong localization, indicating that simultaneous tunability of both carrier and defect density at the surface of electric double layer gated materials is possible.
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Submitted 28 October, 2016;
originally announced October 2016.
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Band structure and electron-phonon coupling in H$_3$S:a tight-binding model
Authors:
Luciano Ortenzi,
Emmanuele Cappelluti,
Luciano Pietronero
Abstract:
We present a robust tight-binding description, based on the Slater-Koster formalism, of the band structure of H$_3$S in the {\em Im}$\bar{3}${\em m} structure, stable in the range of pressure $P = 180-220$ GPa. We show that the interatomic hop** between the 3$s$ and 3$p$ orbitals (and partially between the 3$p$ orbitals themselves) of sulphur is fundamental to capture the relevant physics associ…
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We present a robust tight-binding description, based on the Slater-Koster formalism, of the band structure of H$_3$S in the {\em Im}$\bar{3}${\em m} structure, stable in the range of pressure $P = 180-220$ GPa. We show that the interatomic hop** between the 3$s$ and 3$p$ orbitals (and partially between the 3$p$ orbitals themselves) of sulphur is fundamental to capture the relevant physics associated with the Van Hove singularities close to the Fermi level. Comparing the model so defined with density functional theory calculations we obtain a very good agreement not only of the overall band-structure, but also of the low-energy states and of the Fermi surface properties. The description in terms of Slater-Koster parameters permits us also to evaluate at a microscopic level a hop**-resolved linear electron-lattice coupling which can be employed for further tight-binding analyses also at a local scale.
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Submitted 22 August, 2016; v1 submitted 13 November, 2015;
originally announced November 2015.
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Theory of strain in single-layer transition metal dichalcogenides
Authors:
Habib Rostami,
Rafael Roldán,
Emmanuele Cappelluti,
Reza Asgari,
Francisco Guinea
Abstract:
Strain engineering has emerged as a powerful tool to modify the optical and electronic properties of two-dimensional crystals. Here we perform a systematic study of strained semiconducting transition metal dichalcogenides. The effect of strain is considered within a full Slater-Koster tight-binding model, which provides us with the band structure in the whole Brillouin zone. From this, we derive a…
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Strain engineering has emerged as a powerful tool to modify the optical and electronic properties of two-dimensional crystals. Here we perform a systematic study of strained semiconducting transition metal dichalcogenides. The effect of strain is considered within a full Slater-Koster tight-binding model, which provides us with the band structure in the whole Brillouin zone. From this, we derive an effective low-energy model valid around the K point of the BZ, which includes terms up to second order in momentum and strain. For a generic profile of strain, we show that the solutions for this model can be expressed in terms of the harmonic oscillator and double quantum well models, for the valence and conduction bands respectively. We further study the shift of the position of the electron and hole band edges due to uniform strain. Finally, we discuss the importance of spin-strain coupling in these 2D semiconducting materials.
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Submitted 22 November, 2015; v1 submitted 12 August, 2015;
originally announced August 2015.
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Unconventional dc transport in Rashba electron gases
Authors:
Valentina Brosco,
Lara Benfatto,
Emmanuele Cappelluti,
Claudio Grimaldi
Abstract:
We discuss the transport properties of a disordered two-dimensional electron gas with strong Rashba spin-orbit coupling. We show that in the high-density regime where the Fermi energy overcomes the energy associated with spin-orbit coupling, dc transport is accurately described by a standard Drude's law, due to a non-trivial compensation between the suppression of back-scattering and the relativis…
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We discuss the transport properties of a disordered two-dimensional electron gas with strong Rashba spin-orbit coupling. We show that in the high-density regime where the Fermi energy overcomes the energy associated with spin-orbit coupling, dc transport is accurately described by a standard Drude's law, due to a non-trivial compensation between the suppression of back-scattering and the relativistic correction to the quasi-particle velocity. On the contrary, when the system enters the opposite dominant spin-orbit regime, Drude's paradigm breaks down and the dc conductivity becomes strongly sensitive to the spin-orbit coupling strength, providing a suitable tool to test the entanglement between spin and charge degrees of freedom in these
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Submitted 8 April, 2016; v1 submitted 5 June, 2015;
originally announced June 2015.
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Strain engineering in semiconducting two-dimensional crystals
Authors:
Rafael Roldán,
Andres Castellanos-Gomez,
Emmanuele Cappelluti,
Francisco Guinea
Abstract:
One of the fascinating properties of the new families of two-dimensional crystals is their high stretchability and the possibility to use external strain to manipulate, in a controlled manner, their optical and electronic properties. Strain engineering, understood as the field that study how the physical properties of materials can be tuned by controlling the elastic strain fields applied to it, h…
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One of the fascinating properties of the new families of two-dimensional crystals is their high stretchability and the possibility to use external strain to manipulate, in a controlled manner, their optical and electronic properties. Strain engineering, understood as the field that study how the physical properties of materials can be tuned by controlling the elastic strain fields applied to it, has a perfect platform for its implementation in the atomically thin semiconducting materials. The object of this review is to give an overview of the recent progress to control the optical and electronics properties of 2D crystals, by means of strain engineering. We will concentrate on semiconducting layered materials, with especial emphasis in transition metal dichalcogenides (MoS$_2$, WS$_2$, MoSe$_2$ and WSe$_2$). The effect of strain in other atomically thin materials like black phosphorus, silicene, etc., is also considered. The benefits of strain engineering in 2D crystals for applications in nanoelectronics and optoelectronics will be revised, and the open problems in the field will be discussed.
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Submitted 23 July, 2015; v1 submitted 29 April, 2015;
originally announced April 2015.
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Dielectric Screening in Atomically Thin Boron Nitride Nanosheets
Authors:
Lu Hua Li,
Elton J. G. Santos,
Tan Xing,
Emmanuele Cappelluti,
Rafael Roldán,
Ying Chen,
Kenji Watanabe,
Takashi Taniguchi
Abstract:
Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide and many other 2D nanomaterials based electronic and photonic devices. To optimize the performance of these 2D devices, it is essential to understand the dielectric screening properties of BN nanosheets as a function of the thickness. Here, electric force microscopy al…
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Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide and many other 2D nanomaterials based electronic and photonic devices. To optimize the performance of these 2D devices, it is essential to understand the dielectric screening properties of BN nanosheets as a function of the thickness. Here, electric force microscopy along with theoretical calculations based on both state-of-the-art first-principles calculations with van der Waals interactions under consideration and non-linear Thomas-Fermi theory models are used to investigate the dielectric screening in high-quality BN nanosheets of different thicknesses. It is found that atomically thin BN nanosheets are less effective in electric field screening, but the screening capability of BN shows a relatively weak dependence on the layer thickness.
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Submitted 1 March, 2015;
originally announced March 2015.
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Massless Dirac cones in graphene: experiments and theory
Authors:
E. Cappelluti,
L. Benfatto,
M. Papagno,
D. Pacilè,
P. M. Sheverdyaeva,
P. Moras
Abstract:
The opening of a gap in single-layer graphene is often ascribed to the breaking of the equivalence between the two carbon sublattices. We show by angle-resolved photoemission spectroscopy that Ir- and Na-modified graphene grown on the Ir(111) surface presents a very large unconventional gap that can be described in terms of a phenomenological "massless" Dirac model. We discuss the consequences and…
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The opening of a gap in single-layer graphene is often ascribed to the breaking of the equivalence between the two carbon sublattices. We show by angle-resolved photoemission spectroscopy that Ir- and Na-modified graphene grown on the Ir(111) surface presents a very large unconventional gap that can be described in terms of a phenomenological "massless" Dirac model. We discuss the consequences and differences of this model in comparison of the standard massive gap model, and we investigate the conditions under which such anomalous gap can arise from a spontaneous symmetry breaking.
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Submitted 26 February, 2015;
originally announced February 2015.
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Reply to 'Comment on "Thermodynamics of quantum crystalline membranes"'
Authors:
B. Amorim,
R. Roldán,
E. Cappelluti,
F. Guinea,
A. Fasolino,
M. I. Katsnelson
Abstract:
In this note, we reply to the comment made by E.I.Kats and V.V.Lebedev [arXiv:1407.4298] on our recent work "Thermodynamics of quantum crystalline membranes" [Phys. Rev. B 89, 224307 (2014)]. Kats and Lebedev question the validity of the calculation presented in our work, in particular on the use of a Debye momentum as a ultra-violet regulator for the theory. We address and counter argue the criti…
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In this note, we reply to the comment made by E.I.Kats and V.V.Lebedev [arXiv:1407.4298] on our recent work "Thermodynamics of quantum crystalline membranes" [Phys. Rev. B 89, 224307 (2014)]. Kats and Lebedev question the validity of the calculation presented in our work, in particular on the use of a Debye momentum as a ultra-violet regulator for the theory. We address and counter argue the criticisms made by Kats and Lebedev to our work.
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Submitted 9 October, 2014;
originally announced October 2014.
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Electronic properties of single-layer and multilayer transition metal dichalcogenides $MX_2$ ($M=$ Mo, W and $X=$ S, Se)
Authors:
R. Roldán,
J. A. Silva-Guillén,
M. P. López-Sancho,
F. Guinea,
E. Cappelluti,
P. Ordejón
Abstract:
Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin devices. Here we review the electronic properties of semiconducting $MX_2$, where $M=$Mo or W and $X=$ S or Se. Based on of density functional theory calculatio…
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Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin devices. Here we review the electronic properties of semiconducting $MX_2$, where $M=$Mo or W and $X=$ S or Se. Based on of density functional theory calculations, which include the effect of spin-orbit interaction, we discuss the band structure of single-layer, bilayer and bulk compounds. The band structure of these compounds is highly sensitive to elastic deformations, and we review how strain engineering can be used to manipulate and tune the electronic and optical properties of those materials. We further discuss the effect of disorder and imperfections in the lattice structure and their effect on the optical and transport properties of $MX_2$. The superconducting transition in these compounds, which has been observed experimentally, is analyzed, as well as the different mechanisms proposed so far to explain the pairing. Finally, we include a discussion on the excitonic effects which are present in these systems.
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Submitted 8 October, 2014;
originally announced October 2014.
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Thermodynamics of quantum crystalline membranes
Authors:
B. Amorim,
R. Roldán,
E. Cappelluti,
A. Fasolino,
F. Guinea,
M. I. Katsnelson
Abstract:
We investigate the thermodynamic properties and the lattice stability of two-dimensional crystalline membranes, such as graphene and related compounds, in the low temperature quantum regime $T\rightarrow0$. A key role is played by the anharmonic coupling between in-plane and out-of plane lattice modes that, in the quantum limit, has very different consequences than in the classical regime. The rol…
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We investigate the thermodynamic properties and the lattice stability of two-dimensional crystalline membranes, such as graphene and related compounds, in the low temperature quantum regime $T\rightarrow0$. A key role is played by the anharmonic coupling between in-plane and out-of plane lattice modes that, in the quantum limit, has very different consequences than in the classical regime. The role of retardation, namely of the frequency dependence, in the effective anharmonic interactions turns out to be crucial in the quantum regime. We identify a crossover temperature, $T^{*}$, between classical and quantum regimes, which is $\sim 70 - 90$ K for graphene. Below $T^{*}$, the heat capacity and thermal expansion coefficient decrease as power laws with decreasing temperature, tending to zero for $T\rightarrow0$ as required by the third law of thermodynamics.
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Submitted 30 June, 2014; v1 submitted 11 March, 2014;
originally announced March 2014.
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Momentum dependence of spin-orbit interaction effects in single-layer and multi-layer transition metal dichalcogenides
Authors:
R. Roldán,
M. P. López-Sancho,
E. Cappelluti,
J. A. Silva-Guillén,
P. Ordejón,
F. Guinea
Abstract:
One of the main characteristics of the new family of two-dimensional crystals of semiconducting transition metal dichalcogenides (TMD) is the strong spin-orbit interaction, which makes them very promising for future applications in spintronics and valleytronics devices. Here we present a detailed study of the effect of spin-orbit coupling (SOC) on the band structure of single-layer and bulk TMDs,…
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One of the main characteristics of the new family of two-dimensional crystals of semiconducting transition metal dichalcogenides (TMD) is the strong spin-orbit interaction, which makes them very promising for future applications in spintronics and valleytronics devices. Here we present a detailed study of the effect of spin-orbit coupling (SOC) on the band structure of single-layer and bulk TMDs, including explicitly the role of the chalcogen orbitals and their hybridization with the transition metal atoms. To this aim, we combine density functional theory (DFT) calculations with a Slater-Koster tight-binding model. Whereas most of the previous tight-binding models have been restricted to the K and K' points of the Brillouin zone (BZ), here we consider the effect of SOC in the whole BZ, and the results are compared to the band structure obtained by DFT methods. The tight-binding model is used to analyze the effect of SOC in the band structure, considering separately the contributions from the transition metal and the chalcogen atoms. Finally, we present a scenario where, in the case of strong SOC, the spin/orbital/valley entanglement at the minimum of the conduction band at Q can be probed and be of experimental interest in the most common cases of electron-do** reported for this family of compounds.
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Submitted 17 November, 2014; v1 submitted 20 January, 2014;
originally announced January 2014.
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Coupling of the A_{1g} As-phonon to magnetism in iron pnictides
Authors:
N. A. García-Martínez,
B. Valenzuela,
S. Ciuchi,
E. Cappelluti,
M. J. Calderón,
E. Bascones
Abstract:
Charge, spin and lattice degrees of freedom are strongly entangled in iron superconductors. A neat consequence of this entanglement is the behavior of the A_{1g} As-phonon resonance in the different polarization symmetries of Raman spectroscopy when undergoing the magneto-structural transition. In this work we show that the observed behavior could be a direct consequence of the coupling of the pho…
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Charge, spin and lattice degrees of freedom are strongly entangled in iron superconductors. A neat consequence of this entanglement is the behavior of the A_{1g} As-phonon resonance in the different polarization symmetries of Raman spectroscopy when undergoing the magneto-structural transition. In this work we show that the observed behavior could be a direct consequence of the coupling of the phonons with the electronic excitations in the anisotropic magnetic state. We discuss this scenario within a five orbital tight-binding model coupled to phonons via the dependence of the Slater-Koster parameters on the As position. We identify two qualitatively different channels of the electron-phonon interaction: a geometrical one related to the Fe-As-Fe angle and another one associated with the modification upon As displacement of the Fe-As energy integrals pdsigma and pdpi. While both mechanisms result in a finite B_{1g} response, the behavior of the phonon intensity in the A_{1g} and B_{1g} Raman polarization geometries is qualitatively different when the coupling is driven by the angle or by the energy integral dependence. We discuss our results in view of the experimental reports.
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Submitted 26 July, 2013;
originally announced July 2013.
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Local strain engineering in atomically thin MoS2
Authors:
Andres Castellanos-Gomez,
Rafael Roldán,
Emmanuele Cappelluti,
Michele Buscema,
Francisco Guinea,
Herre S. J. van der Zant,
Gary A. Steele
Abstract:
Tuning the electronic properties of a material by subjecting it to strain constitutes an important strategy to enhance the performance of semiconducting electronic devices. Using local strain, confinement potentials for excitons can be engineered, with exciting possibilities for trap** excitons for quantum optics and for efficient collection of solar energy. Two-dimensional materials are able to…
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Tuning the electronic properties of a material by subjecting it to strain constitutes an important strategy to enhance the performance of semiconducting electronic devices. Using local strain, confinement potentials for excitons can be engineered, with exciting possibilities for trap** excitons for quantum optics and for efficient collection of solar energy. Two-dimensional materials are able to withstand large strains before rupture, offering a unique opportunity to introduce large local strains. Here, we study atomically thin MoS2 layers with large local strains of up to 2.5% induced by controlled delamination from a substrate. Using simultaneous scanning Raman and photoluminescence imaging, we spatially resolve a direct bandgap reduction of up to 90 meV induced by local strain. We observe a funnel effect in which excitons drift hundreds of nanometers to lower bandgap regions before recombining, demonstrating exciton confinement by local strain. The observations are supported by an atomistic tight-binding model developed to predict the effect of inhomogeneous strain on the local electronic states in MoS2. The possibility of generating large strain-induced variations in exciton trap** potentials opens the door for a variety of applications in atomically thin materials including photovoltaics, quantum optics and two-dimensional optoelectronic devices.
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Submitted 4 December, 2013; v1 submitted 17 June, 2013;
originally announced June 2013.
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Tight-binding model and direct-gap/indirect-gap transition in single-layer and multi-layer MoS$_2$
Authors:
E. Cappelluti,
R. Roldán,
J. A. Silva-Guillén,
P. Ordejón,
F. Guinea
Abstract:
In this paper we present a paradigmatic tight-binding model for single-layer as well as for multi-layered semiconducting MoS$_2$ and similar transition metal dichalcogenides. We show that the electronic properties of multilayer systems can be reproduced in terms of a tight-binding modelling of the single-layer hop** terms by simply adding the proper interlayer hop**s ruled by the chalcogenide…
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In this paper we present a paradigmatic tight-binding model for single-layer as well as for multi-layered semiconducting MoS$_2$ and similar transition metal dichalcogenides. We show that the electronic properties of multilayer systems can be reproduced in terms of a tight-binding modelling of the single-layer hop** terms by simply adding the proper interlayer hop**s ruled by the chalcogenide atoms. We show that such tight-binding model permits to understand and control in a natural way the transition between a direct-gap band structure, in single-layer systems, to an indirect gap in multilayer compounds in terms of a momentum/orbital selective interlayer splitting of the relevant valence and conduction bands. The model represents also a suitable playground to investigate in an analytical way strain and finite-size effects.
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Submitted 17 April, 2013;
originally announced April 2013.
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Tunable Infrared Phonon Anomalies in Trilayer Graphene
Authors:
Chun Hung Lui,
Emmanuele Cappelluti,
Zhiqiang Li,
Tony F. Heinz
Abstract:
Trilayer graphene in both ABA (Bernal) and ABC (rhombohedral) stacking sequences is shown to exhibit intense infrared absorption from in-plane optical phonons. The feature, lying at ~1580 cm-1, changes strongly with electrostatic gating. For ABC-stacked graphene trilayers, we observed a large enhancement in phonon absorption amplitude, as well as softening of the phonon mode, as the Fermi level is…
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Trilayer graphene in both ABA (Bernal) and ABC (rhombohedral) stacking sequences is shown to exhibit intense infrared absorption from in-plane optical phonons. The feature, lying at ~1580 cm-1, changes strongly with electrostatic gating. For ABC-stacked graphene trilayers, we observed a large enhancement in phonon absorption amplitude, as well as softening of the phonon mode, as the Fermi level is tuned away from charge neutrality. A similar, but substantially weaker effect is seen in samples with the more common ABA stacking order. The strong infrared response of the optical phonons and the pronounced variation with electrostatic gating and stacking-order reflect the interactions of the phonons and electronic excitations in the two systems. The key experimental findings can be reproduced within a simplified charged-phonon model that considers the influence of charging through Pauli blocking of the electronic transitions.
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Submitted 21 January, 2013;
originally announced January 2013.
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Interactions and superconductivity in heavily doped MoS2
Authors:
R. Roldan,
E. Cappelluti,
F. Guinea
Abstract:
We analyze the microscopic origin and the physical properties of the superconducting phase recently observed in MoS$_2$. We show how the combination of the valley structure of the conduction band, the density dependence of the screening of the long range Coulomb interactions, the short range electronic repulsion, and the relative weakness of the electron-phonon interactions, makes possible the exi…
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We analyze the microscopic origin and the physical properties of the superconducting phase recently observed in MoS$_2$. We show how the combination of the valley structure of the conduction band, the density dependence of the screening of the long range Coulomb interactions, the short range electronic repulsion, and the relative weakness of the electron-phonon interactions, makes possible the existence of a phase where the superconducting order parameter has opposite signs in different valleys, resembling the superconductivity found in the pnictides and cuprates.
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Submitted 21 January, 2013;
originally announced January 2013.
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Electric field screening in atomically thin layers of MoS2: the role of interlayer coupling
Authors:
Andres Castellanos-Gomez,
Emmanuele Cappelluti,
Rafael Roldán,
Nicolás Agraït,
Francisco Guinea,
Gabino Rubio-Bollinger
Abstract:
The aim of this work is to study the electrostatic screening by single and few-layer MoS2 sheets by means of electrostatic force microscopy in combination with a non-linear Thomas-Fermi Theory to interpret the experimental results. We find that a continuum model of decoupled layers, which satisfactorily reproduces the electrostatic screening for graphene and graphite, cannot account for the experi…
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The aim of this work is to study the electrostatic screening by single and few-layer MoS2 sheets by means of electrostatic force microscopy in combination with a non-linear Thomas-Fermi Theory to interpret the experimental results. We find that a continuum model of decoupled layers, which satisfactorily reproduces the electrostatic screening for graphene and graphite, cannot account for the experimental observations. A three-dimensional model with an interlayer hop** parameter can on the other hand successfully account for the observed electric field screening by MoS2 nanolayers, pointing out the important role of the interlayer coupling in the screening of MoS2.
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Submitted 6 November, 2012; v1 submitted 2 November, 2012;
originally announced November 2012.
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Charged-phonon theory and Fano effect in the optical spectroscopy of bilayer graphene
Authors:
E. Cappelluti,
L. Benfatto,
M. Manzardo,
A. B. Kuzmenko
Abstract:
Since their discovery, graphene-based systems represent an exceptional playground to explore the emergence of peculiar quantum effects. The present paper focuses on the anomalous appearence of strong infrared phonon resonances in the optical spectroscopy of bilayer graphene and on their pronounced Fano-like asymmetry, both tunable in gated devices. By develo** a full microscopic many-body approa…
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Since their discovery, graphene-based systems represent an exceptional playground to explore the emergence of peculiar quantum effects. The present paper focuses on the anomalous appearence of strong infrared phonon resonances in the optical spectroscopy of bilayer graphene and on their pronounced Fano-like asymmetry, both tunable in gated devices. By develo** a full microscopic many-body approach for the optical phonon response we explain how both effects can be quantitatively accounted for by the quantum interference of electronic and phononic excitations. We show that the phonon modes borrow a large dipole intensity from the electronic background, the so-called charged-phonon effect, and at the same time interfer with it, leading to a typical Fano response. Our approach allows one to disentangle the correct selection rules that control the relative importance of the two (symmetric and antisymmetric) relevant phonon modes for different values of the do** and/or of the gap in bilayer graphene. Finally, we discuss the extension of the same theoretical scheme to the Raman spectroscopy, to explain the lack of the same features on the Raman phononic spectra. Besides its remarkable success in explaining the existing experimental data in graphene-based systems, the present theoretical approach offers a general scheme for the microscopic understanding of Fano-like features in a wide variety of other systems.
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Submitted 2 October, 2012;
originally announced October 2012.
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Infrared phonon activity in pristine graphite
Authors:
M. Manzardo,
E. Cappelluti,
E. van Heumen,
A. B. Kuzmenko
Abstract:
We study experimentally and theoretically the Fano-shaped phonon peak at 1590 cm$^{-1}$ (0.2 eV) in the in-plane optical conductivity of pristine graphite. We show that the anomalously large spectral weight and the Fano asymmetry of the peak can be qualitatively accounted for by a charged-phonon theory. A crucial role in this context is played by the particle-hole asymmetry of the electronic $π$-b…
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We study experimentally and theoretically the Fano-shaped phonon peak at 1590 cm$^{-1}$ (0.2 eV) in the in-plane optical conductivity of pristine graphite. We show that the anomalously large spectral weight and the Fano asymmetry of the peak can be qualitatively accounted for by a charged-phonon theory. A crucial role in this context is played by the particle-hole asymmetry of the electronic $π$-bands.
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Submitted 22 May, 2012;
originally announced May 2012.
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Unconventional Hall effect in pnictides from interband interactions
Authors:
L. Fanfarillo,
E. Cappelluti,
C. Castellani,
L. Benfatto
Abstract:
We calculate the Hall transport in a multiband systems with a dominant interband interaction between carriers having electron and hole character. We show that this situation gives rise to an unconventional scenario, beyond the Boltzmann theory, where the quasiparticle currents dressed by vertex corrections acquire the character of the majority carriers. This leads to a larger (positive or negative…
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We calculate the Hall transport in a multiband systems with a dominant interband interaction between carriers having electron and hole character. We show that this situation gives rise to an unconventional scenario, beyond the Boltzmann theory, where the quasiparticle currents dressed by vertex corrections acquire the character of the majority carriers. This leads to a larger (positive or negative) Hall coefficient than what expected on the basis of the carrier balance, with a marked temperature dependence. Our results explain the puzzling measurements in pnictides and they provide a more general framework for transport properties in multiband materials.
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Submitted 10 May, 2012;
originally announced May 2012.
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Hop**-resolved electron-phonon coupling in bilayer graphene
Authors:
E. Cappelluti,
G. Profeta
Abstract:
In this paper we investigate the electron-phonon coupling in bilayer graphene, as a paradigmatic case for multilayer graphenes where interlayer hop**s are relevant. Using a frozen-phonon approach within the context of Density Functional Theory (DFT) and using different optical phonon displacements we are able to evaluate quantitatively the electron-phonon coupling $α_i$ associated with each hopp…
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In this paper we investigate the electron-phonon coupling in bilayer graphene, as a paradigmatic case for multilayer graphenes where interlayer hop**s are relevant. Using a frozen-phonon approach within the context of Density Functional Theory (DFT) and using different optical phonon displacements we are able to evaluate quantitatively the electron-phonon coupling $α_i$ associated with each hop** term $γ_i$. This analysis also reveals a simple scaling law between the hop** terms $γ_i$ and the electron-phonon coupling $α_i$ which goes beyond the specific DFT technique employed.
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Submitted 26 February, 2012;
originally announced February 2012.
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Mechanical lattice instability and thermodynamical properties in classical solids
Authors:
G. Rastelli,
E. Cappelluti
Abstract:
In this paper we revisit the onset of the instability of the solid state in classical systems within self-consistent phonon theory (SCPT). Spanning the whole phase diagram versus volume and versus pressure, we identify two different kinds of mechanism: one mainly relevant at constant volume, associated with the vanishing of the SCPT solution; and one related to the disappearing at a spinodal tempe…
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In this paper we revisit the onset of the instability of the solid state in classical systems within self-consistent phonon theory (SCPT). Spanning the whole phase diagram versus volume and versus pressure, we identify two different kinds of mechanism: one mainly relevant at constant volume, associated with the vanishing of the SCPT solution; and one related to the disappearing at a spinodal temperature of the solid phase as a metastable energy minimum. We show how the first mechanism occurs at extremely high temperatures and it is not reflected in any singular behavior of the thermodynamical properties. In contrast, the second one appears at physical temperatures which correlate well with the melting temperature and it is signalized by the divergence of the thermal compressibility as well as of the the lattice expansion coefficient.
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Submitted 20 October, 2011;
originally announced October 2011.
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Structurally Dependent Fano Resonances in the Infrared Spectra of Phonons in Few-Layer Graphene
Authors:
Zhiqiang Li,
Chun Hung Lui,
Emmanuele Cappelluti,
Lara Benfatto,
Kin Fai Mak,
G. Larry Carr,
Jie Shan,
Tony F. Heinz
Abstract:
The in-plane optical phonons around 200 meV in few-layer graphene are investigated utilizing infrared absorption spectroscopy. The phonon spectra exhibit unusual asymmetric features characteristic of Fano resonances, which depend critically on the layer thickness and stacking order of the sample. The phonon intensities in samples with rhombohedral (ABC) stacking are significantly higher than those…
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The in-plane optical phonons around 200 meV in few-layer graphene are investigated utilizing infrared absorption spectroscopy. The phonon spectra exhibit unusual asymmetric features characteristic of Fano resonances, which depend critically on the layer thickness and stacking order of the sample. The phonon intensities in samples with rhombohedral (ABC) stacking are significantly higher than those with Bernal (AB) stacking. These observations reflect the strong coupling between phonons and interband electronic transitions in these systems and the distinctive variation in the joint density of electronic states in samples of differing thickness and stacking order.
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Submitted 28 September, 2011;
originally announced September 2011.
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Observation of an electrically tunable band gap in trilayer graphene
Authors:
Chun Hung Lui,
Zhiqiang Li,
Kin Fai Mak,
Emmanuele Cappelluti,
Tony F. Heinz
Abstract:
A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field. Thicker graphene layers are also highly attractive materials. The ability to produce a band gap in these systems is of great fundamental and practical interest. Both experimental and theoretical investigations of graphene trilayers with th…
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A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field. Thicker graphene layers are also highly attractive materials. The ability to produce a band gap in these systems is of great fundamental and practical interest. Both experimental and theoretical investigations of graphene trilayers with the typical ABA layer stacking have, however, revealed the lack of any appreciable induced gap. Here we contrast this behavior with that exhibited by graphene trilayers with ABC crystallographic stacking. The symmetry of this structure is similar to that of AB stacked graphene bilayers and, as shown by infrared conductivity measurements, permits a large band gap to be formed by an applied electric field. Our results demonstrate the critical and hitherto neglected role of the crystallographic stacking sequence on the induction of a band gap in few-layer graphene.
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Submitted 23 May, 2011;
originally announced May 2011.
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Extended Drude model and role of interband transitions in the mid-infrared spectra of pnictides
Authors:
L. Benfatto,
E. Cappelluti,
L. Ortenzi,
L. Boeri
Abstract:
We analyze the outcomes of an extended-Drude-model approach to the optical spectra of pnictides, where the multiband nature of the electronic excitations requires a careful analysis of the role of interband processes in the optical conductivity.Through a direct comparison between model calculations of the intraband optical spectra and experimental data, we show that interband transitions,whose rel…
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We analyze the outcomes of an extended-Drude-model approach to the optical spectra of pnictides, where the multiband nature of the electronic excitations requires a careful analysis of the role of interband processes in the optical conductivity.Through a direct comparison between model calculations of the intraband optical spectra and experimental data, we show that interband transitions,whose relevance is shown by first-principle calculations,give a non negligible contribution already in the infrared region. This leads to a substantial failure of the extended-Drude-model analysis on the measured optical data without subtraction of interband contributions.
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Submitted 11 April, 2011; v1 submitted 7 April, 2011;
originally announced April 2011.
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Effects of Fermi-surface shrinking on the optical sum rule in pnictides
Authors:
L. Benfatto,
E. Cappelluti
Abstract:
In this paper we investigate the effects of the band shifts induced by the interband spin-fluctuation coupling on the optical sum rule in pnictides. We show that, despite the shrinking of the Fermi surfaces with respect to first-principle calculations, the charge-carrier concentration in each band is almost unchanged, with a substantial conservation of the total optical sum rule. However, a signif…
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In this paper we investigate the effects of the band shifts induced by the interband spin-fluctuation coupling on the optical sum rule in pnictides. We show that, despite the shrinking of the Fermi surfaces with respect to first-principle calculations, the charge-carrier concentration in each band is almost unchanged, with a substantial conservation of the total optical sum rule. However, a significant transfer of spectral weight occurs from low-energy coherent processes to incoherent ones, with practical consequences on the experimental estimate of the sum rule, that is carried out integrating the data up to a finite cut-off. This has profound consequences both on the absolute value of the sum rule and on its temperature dependence, that must be taken into account while discussing optical experiments in these systems.
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Submitted 11 April, 2011; v1 submitted 24 November, 2010;
originally announced November 2010.
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Phonon switching and combined Fano-Rice effect in optical spectra of bilayer graphene
Authors:
E. Cappelluti,
L. Benfatto,
A. B. Kuzmenko
Abstract:
Recent infrared measurements of phonon peaks in gated bilayer graphene reveal two striking signatures of electron-phonon interaction: an asymmetric Fano lineshape and a giant variation of the peak intensity as a function of the applied gate voltage. In this Letter we provide a unified theoretical framework which accounts for both these effects and unveils the occurrence of a switching mechanism be…
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Recent infrared measurements of phonon peaks in gated bilayer graphene reveal two striking signatures of electron-phonon interaction: an asymmetric Fano lineshape and a giant variation of the peak intensity as a function of the applied gate voltage. In this Letter we provide a unified theoretical framework which accounts for both these effects and unveils the occurrence of a switching mechanism between the symmetric ($E_g$) and anti-symmetric ($E_u$) phonon mode as dominant channel in the optical response. A complete phase diagram of the optical phonon response is also presented, as a function of both the charge density and the bandgap.
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Submitted 23 July, 2010; v1 submitted 9 March, 2010;
originally announced March 2010.
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Spectroscopic and thermodynamic properties in a four-band model for pnictides
Authors:
L. Benfatto,
E. Cappelluti,
C. Castellani
Abstract:
In this paper we provide a comprehesive analysis of different properties of pnictides both in the normal and superconducting state, with a particular focus on the optimally-doped Ba$_{1-x}$K$_{x}$Fe$_2$As$_2$ system. We show that, by using the band dispersions experimentally measured by ARPES, a four-band Eliashberg model in the intermediate-coupling regime can account for both the measured hier…
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In this paper we provide a comprehesive analysis of different properties of pnictides both in the normal and superconducting state, with a particular focus on the optimally-doped Ba$_{1-x}$K$_{x}$Fe$_2$As$_2$ system. We show that, by using the band dispersions experimentally measured by ARPES, a four-band Eliashberg model in the intermediate-coupling regime can account for both the measured hierarchy of the gaps and for several spectroscopic and thermodynamic signatures of low-energy renormalization. These include the kinks in the band dispersion and the effective masses determined via specific-heat and superfluid-density measurements. We also show that, although an intermediate-coupling Eliashberg approach is needed to account for the magnitude of the gaps, the temperature behavior of the thermodynamic quantities does not show in this regime a significant deviation with respect to weak-coupling BCS calculations. This can explain the apparent success of two-band BCS fits of experimental data reported often in the literature.
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Submitted 11 January, 2010; v1 submitted 21 September, 2009;
originally announced September 2009.
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Gate tunable charged-phonon effect in bilayer graphene
Authors:
A. B. Kuzmenko,
L. Benfatto,
E. Cappelluti,
I. Crassee,
D. van der Marel,
P. Blake,
K. S. Novoselov,
A. K. Geim
Abstract:
We observe a giant increase of the infrared intensity and a softening of the in-plane antisymmetric phonon mode Eu (~0.2 eV) in bilayer graphene as a function of the gate-induced do**. The phonon peak has a pronounced Fano-like asymmetry. We suggest that the intensity growth and the softening originate from the coupling of the phonon mode to the narrow electronic transition between parallel ba…
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We observe a giant increase of the infrared intensity and a softening of the in-plane antisymmetric phonon mode Eu (~0.2 eV) in bilayer graphene as a function of the gate-induced do**. The phonon peak has a pronounced Fano-like asymmetry. We suggest that the intensity growth and the softening originate from the coupling of the phonon mode to the narrow electronic transition between parallel bands of the same character, while the asymmetry is due to the interaction with the continuum of transitions between the lowest hole and electron bands. The growth of the peak is a manifestation of the "charged-phonon" effect observed previously in organic chain conductors and doped fullerenes, which can now be tuned with the gate voltage.
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Submitted 10 September, 2009; v1 submitted 11 June, 2009;
originally announced June 2009.
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Fermi surface shrinking and interband coupling in iron-based pnictides
Authors:
L. Ortenzi,
E. Cappelluti,
L. Benfatto,
L. Pietronero
Abstract:
Recent measurements of Fermi surface with de Haas-van Alphen oscillations in LaFePO showed a shrinking of the Fermi pockets with respect to first-principle LDA calculations, suggesting an energy shift of the hole and electrons bands with respect to LDA. We show that these shifts are a natural consequence of the strong particle-hole asymmetry of electronic bands in pnictides, and that they provid…
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Recent measurements of Fermi surface with de Haas-van Alphen oscillations in LaFePO showed a shrinking of the Fermi pockets with respect to first-principle LDA calculations, suggesting an energy shift of the hole and electrons bands with respect to LDA. We show that these shifts are a natural consequence of the strong particle-hole asymmetry of electronic bands in pnictides, and that they provide an indirect experimental evidence of a dominant interband scattering in these systems.
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Submitted 24 July, 2009; v1 submitted 2 March, 2009;
originally announced March 2009.
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Vertex renormalization in dc conductivity of doped chiral graphene
Authors:
E. Cappelluti,
L. Benfatto
Abstract:
The remarkable transport properties of graphene follow not only from the the Dirac-like energy dispersion, but also from the chiral nature of its excitations, which makes unclear the limits of applicability of the standard semiclassical Boltzmann approach. In this paper we provide a quantum derivation of the transport scattering time in graphene in the case of electron-phonon interaction. By usi…
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The remarkable transport properties of graphene follow not only from the the Dirac-like energy dispersion, but also from the chiral nature of its excitations, which makes unclear the limits of applicability of the standard semiclassical Boltzmann approach. In this paper we provide a quantum derivation of the transport scattering time in graphene in the case of electron-phonon interaction. By using the Kubo formalism, we compute explicitly the vertex corrections to the dc conductivity by retaining the full chiral matrix structure of graphene. We show that at least in the regime of large chemical potential the Boltzmann picture is justified, and it is also robust against a small sublattice inequivalence which partly spoils the role of chirality.
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Submitted 26 February, 2009; v1 submitted 24 September, 2008;
originally announced September 2008.
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Finite size Berezinski-Kosterlitz-Thouless transition at grain boundaries in solid $^4$He and role of $^3$He impurities
Authors:
S. Gaudio,
E. Cappelluti,
G. Rastelli,
L. Pietronero
Abstract:
We analyze the complex phenomenology of the Non-Classical Rotational Inertia (NCRI) observed at low temperature in solid $^4$He within the context of a two dimensional Berezinski-Kosterlitz-Thouless transition in a premelted $^4$He film at the grain boundaries. We show that both the temperature and $^3$He do** dependence of the NCRI fraction (NCRIF) can be ascribed to finite size effects induc…
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We analyze the complex phenomenology of the Non-Classical Rotational Inertia (NCRI) observed at low temperature in solid $^4$He within the context of a two dimensional Berezinski-Kosterlitz-Thouless transition in a premelted $^4$He film at the grain boundaries. We show that both the temperature and $^3$He do** dependence of the NCRI fraction (NCRIF) can be ascribed to finite size effects induced by the finite grain size. We give an estimate of the average size of the grains which we argue to be limited by the isotopic $^3$He impurities and we provide a simple power-law relation between the NCRIF and the $^3$He concentration.
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Submitted 29 August, 2008; v1 submitted 6 June, 2008;
originally announced June 2008.
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Spectroscopic Signatures of Massless Gap Opening in Graphene
Authors:
L. Benfatto,
E. Cappelluti
Abstract:
Gap opening in graphene is usually discussed in terms of a semiconducting-like spectrum, where the appearance of a finite gap at the Dirac point is accompanied by a finite mass for the fermions. In this Letter we propose a gap scenario from graphene which preserves the massless characters of the carriers. This approach explains recent spectroscopic measurements carried out in epitaxially-grown g…
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Gap opening in graphene is usually discussed in terms of a semiconducting-like spectrum, where the appearance of a finite gap at the Dirac point is accompanied by a finite mass for the fermions. In this Letter we propose a gap scenario from graphene which preserves the massless characters of the carriers. This approach explains recent spectroscopic measurements carried out in epitaxially-grown graphene, ranging from photoemission to optical transmission.
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Submitted 14 April, 2008;
originally announced April 2008.
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Polaronic signatures in the optical properties of Nd$_{2-x}$Ce$_x$CuO$_4$
Authors:
E. Cappelluti,
S. Ciuchi,
S. Fratini
Abstract:
We investigate the temperature and do** dependence of the optical conductivity $σ(ω)$ of Nd$_{2-x}$Ce$_x$CuO$_4$ in terms of magnetic/lattice polaron formation. We employ dynamical mean-field theory in the context of the Holstein-t-J model where an exact analytical solution is available in the limit of infinite connectivity. We show that the pseudogap features in the optical conductivity of th…
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We investigate the temperature and do** dependence of the optical conductivity $σ(ω)$ of Nd$_{2-x}$Ce$_x$CuO$_4$ in terms of magnetic/lattice polaron formation. We employ dynamical mean-field theory in the context of the Holstein-t-J model where an exact analytical solution is available in the limit of infinite connectivity. We show that the pseudogap features in the optical conductivity of this compound can be associated to the formation of lattice polarons assisted by the magnetic interaction.
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Submitted 30 January, 2008;
originally announced January 2008.
