-
All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy
Authors:
Johannes Aberl,
Enrique Prado Navarrete,
Merve Karaman,
Diego Haya Enriquez,
Christoph Wilflingseder,
Andreas Salomon,
Daniel Primetzhofer,
Markus Andreas Schubert,
Giovanni Capellini,
Thomas Fromherz,
Peter Deák,
Péter Udvarhelyi,
Li Song,
Ádám Gali,
Moritz Brehm
Abstract:
Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC fabrication, deterministic control over the vertical emitter position is impossible due to ion-implantation's stochastic nature. To overcome this bottleneck towards high-yield integration, we demonstrate a radically inn…
▽ More
Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC fabrication, deterministic control over the vertical emitter position is impossible due to ion-implantation's stochastic nature. To overcome this bottleneck towards high-yield integration, we demonstrate a radically innovative creation method for various SiCCs, solely relying on epitaxial growth of Si and C-doped Si at atypically-low temperatures in a ultra-clean growth environment. These telecom emitters can be confined within sub-1nm thick layers embedded at arbitrary vertical positions within a highly crystalline Si matrix. Tuning growth conditions and do**, different SiCC types, e.g., W-centers, T-centers, G-centers, or derivatives like G'-centers can be created, which are particularly promising as Si-based single-photon sources and spin-photon interfaces. The zero-phonon emission from G'-centers can be conveniently tuned by the C-concentration, leading to a systematic wavelength shift and linewidth narrowing towards low emitter densities.
△ Less
Submitted 21 May, 2024; v1 submitted 29 February, 2024;
originally announced February 2024.
-
Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and Ge$_{1-x}$Sn$_{x}$
Authors:
Agnieszka Anna Corley-Wiciak,
Diana Ryzhak,
Marvin Hartwig Zoellner,
Costanza Lucia Manganelli,
Omar Concepción,
Oliver Skibitzki,
Detlev Grützmacher,
Dan Buca,
Giovanni Capellini,
Davide Spirito
Abstract:
Temperature dependence of vibrational modes in semiconductors depends on lattice thermal expansion and anharmonic phonon-phonon scattering. Evaluating the two contributions from experimental data is not straightforward, especially for epitaxial layers that present mechanical deformation and anisotropic lattice expansion. In this work, a temperature-dependent Raman study in epitaxial Ge and Ge…
▽ More
Temperature dependence of vibrational modes in semiconductors depends on lattice thermal expansion and anharmonic phonon-phonon scattering. Evaluating the two contributions from experimental data is not straightforward, especially for epitaxial layers that present mechanical deformation and anisotropic lattice expansion. In this work, a temperature-dependent Raman study in epitaxial Ge and Ge$_{1-x}$Sn$_{x}$ layers is presented. A model is introduced for the Raman mode energy shift as a function of temperature, comprising thermal expansion of the strained lattice and anharmonic corrections. With support of x-ray diffraction, the model is calibrated on experimental data of epitaxial Ge grown on Si and Ge$_{1-x}$Sn$_{x}$ grown on Ge/Si, finding that the main difference between bulk and epitaxial layers is related to the anisotropic lattice expansion. The phonon anharmonicity and other parameters do not depend on dislocation defect density (in the range $7\cdot 10^6$ - $4\cdot 10^8$ cm$^{-2}$) nor on alloy composition in the range 5-14 at.%. The strain-shift coefficient for the main model of Ge and for the Ge-Ge vibrational mode of Ge$_{1-x}$Sn$_{x}$ is weakly dependent on temperature and is around -500 cm$^{-1}$. In Ge$_{1-x}$Sn$_{x}$, the composition-shift coefficient amounts to -100 cm$^{-1}$, independent of temperature and strain.
△ Less
Submitted 5 February, 2024;
originally announced February 2024.
-
Quantum steering from phase measurements with limited resources
Authors:
Gabriele Bizzarri,
Ilaria Gianani,
Mylenne Manrique,
Vincenzo Berardi,
Giovanni Capellini,
Fabio Bruni,
Marco Barbieri
Abstract:
Quantum steering captures the ability of one party, Alice, to control through quantum correlations the state at a distant location, Bob, with superior ability than allowed by a local hidden state model. Verifying the presence of quantum steering has implications for the certification of quantum channels, and its connection to the metrological power of the quantum state has been recently proved. Th…
▽ More
Quantum steering captures the ability of one party, Alice, to control through quantum correlations the state at a distant location, Bob, with superior ability than allowed by a local hidden state model. Verifying the presence of quantum steering has implications for the certification of quantum channels, and its connection to the metrological power of the quantum state has been recently proved. This link is established by means of the violation of a Cramér-Rao bound holding for non-steerable states: its direct assessment would then require operation in the asymptotic regime of a large number of repetitions. Here, we extend previous work to account explicitly for the use of a limited number of resources, and put this modified approach to test in a quantum optics experiment. The imperfections in the apparatus demand an adaptation of the original test in the multiparameter setting. Our results provide guidelines to apply such a metrological approach to the validation of quantum channels.
△ Less
Submitted 30 January, 2024;
originally announced January 2024.
-
Local Alloy Order in a Ge1-xSnx/Ge Epitaxial Layer
Authors:
Agnieszka Anna Corley-Wiciak,
Shunda Chen,
Omar Concepción,
Marvin Hartwig Zoellner,
Detlev Grützmacher,
Dan Buca,
Tianshu Li,
Giovanni Capellini,
Davide Spirito
Abstract:
The local ordering of atoms in alloys directly has a strong impact on their electronic and optical properties. This is particularly relevant in nonrandom alloys, especially if they are deposited using far from the equilibrium processes, as is the case of epitaxial Ge1-xSnx layers. In this work, we investigate the arrangement of Ge and Sn atoms in optoelectronic grade Ge1-xSnx epitaxial layers feat…
▽ More
The local ordering of atoms in alloys directly has a strong impact on their electronic and optical properties. This is particularly relevant in nonrandom alloys, especially if they are deposited using far from the equilibrium processes, as is the case of epitaxial Ge1-xSnx layers. In this work, we investigate the arrangement of Ge and Sn atoms in optoelectronic grade Ge1-xSnx epitaxial layers featuring a Sn content in the 5-14% range by using polarization-dependent Raman spectroscopy and density-functional-theory calculations. The thorough analysis of the polarization-dependent spectra in parallel and perpendicular configuration allowed us to properly tag all the observed vibrational modes, and to shed light on that associated to disorder-assisted Raman transitions. Indeed, with the help of large-scale atomistic simulations, we were able to highlight how the presence of Sn atoms, that modify the local environments of Ge atoms, gives rise to two spectral features at different Raman shifts, corresponding to distortions of the atomic bonds. This analysis provides a valuable framework for advancing the understanding of the vibrational properties in Ge1-xSnx alloys, particularly with regard to the impact of local ordering of the different atomic species.
△ Less
Submitted 11 August, 2023; v1 submitted 10 May, 2023;
originally announced May 2023.
-
Lattice deformation at the sub-micron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices
Authors:
C. Corley-Wiciak,
M. H. Zoellner,
I. Zaitsev,
K. Anand,
E. Zatterin,
Y. Yamamoto,
A. A. Corley-Wiciak,
F. Reichmann,
W. Langheinrich,
L. R. Schreiber,
C. L. Manganelli,
M. Virgilio,
C. Richter,
G. Capellini
Abstract:
The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformation induced by CMOS-manufactured titanium nitride electrodes on the lattice of a buried, 10 nm-thick Si/SiGe Quantum Well by means of nanobeam Scanning X-ray Diffraction Microscopy. We were able to measure TiN electrode-in…
▽ More
The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformation induced by CMOS-manufactured titanium nitride electrodes on the lattice of a buried, 10 nm-thick Si/SiGe Quantum Well by means of nanobeam Scanning X-ray Diffraction Microscopy. We were able to measure TiN electrode-induced local modulations of the strain tensor components in the range of $2 - 8 \times 10^{-4}$ with ~60 nm lateral resolution. We have evaluated that these strain fluctuations are reflected into local modulations of the potential of the conduction band minimum larger than 2 meV, which is close to the orbital energy of an electrostatic quantum dot. We observe that the sign of the strain modulations at a given depth of the quantum well layer depends on the lateral dimensions of the electrodes. Since our work explores the impact of device geometry on the strain-induced energy landscape, it enables further optimization of the design of scaled CMOS-processed quantum devices.
△ Less
Submitted 18 April, 2023;
originally announced April 2023.
-
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures
Authors:
David Stark,
Muhammad Mirza,
Luca Persichetti,
Michele Montanari,
Sergej Markmann,
Mattias Beck,
Thomas Grange,
Stefan Birner,
Michele Virgilio,
Chiara Ciano,
Michele Ortolani,
Cedric Corley,
Giovanni Capellini,
Luciana Di Gaspare,
Monica De Seta,
Douglas J. Paul,
Jérôme Faist,
Giacomo Scalari
Abstract:
We report electroluminescence originating from L-valley transitions in n-type Ge/Si$_{0.15}$Ge$_{0.85}$ quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of $Δf/f \approx 0.2$. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active regio…
▽ More
We report electroluminescence originating from L-valley transitions in n-type Ge/Si$_{0.15}$Ge$_{0.85}$ quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of $Δf/f \approx 0.2$. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active region employing a vertical optical transition and the observed spectral features are well described by non-equilibrium Green's function calculations. The presence of two peaks highlights a suboptimal injection in the upper state of the radiative transition. Comparison of the electroluminescence spectra with similar GaAs/AlGaAs structure yields one order of magnitude lower emission efficiency.
△ Less
Submitted 14 January, 2021;
originally announced January 2021.
-
Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells
Authors:
Luca Persichetti,
Michele Montanari,
Chiara Ciano,
Luciana Di Gaspare,
Michele Ortolani,
Leonetta Baldassarre,
Marvin H. Zoellner,
Samik Mukherjee,
Oussama Moutanabbir,
Giovanni Capellini,
Michele Virgilio,
Monica De Seta
Abstract:
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based THz quantum cascade laser. In this paper, we combine structural and spectroscopic experiments on 20-module superstructures, each featuring two Ge wells coupled through a Ge-rich tunnel barrier, as a function of the geometr…
▽ More
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based THz quantum cascade laser. In this paper, we combine structural and spectroscopic experiments on 20-module superstructures, each featuring two Ge wells coupled through a Ge-rich tunnel barrier, as a function of the geometry parameters of the design and the P dopant concentration. Through the comparison of THz spectroscopic data with numerical calculations of intersubband optical absorption resonances, we demonstrated that it is possible to tune by design the energy and the spatial overlap of quantum confined subbands in the conduction band of the heterostructures. The high structural/interface quality of the samples and the control achieved on subband hybridization are the promising starting point towards a working electrically pumped light-emitting device.
△ Less
Submitted 12 February, 2020;
originally announced February 2020.
-
Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering
Authors:
T. Grange,
S. Mukherjee,
G. Capellini,
M. Montanari,
L. Persichetti,
L. Di Gaspare,
S. Birner,
A. Attiaoui,
O. Moutanabbir,
M. Virgilio,
M. De Seta
Abstract:
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic landscape obtained on Ge/GeSi heterointerfaces obtained by atom probe tomography, we have been able to define the full set of interface parameters relevant…
▽ More
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic landscape obtained on Ge/GeSi heterointerfaces obtained by atom probe tomography, we have been able to define the full set of interface parameters relevant to the scattering potential, including both the in-plane and axial correlation inside real diffuse interfaces. Our experimental findings indicate a partial coherence of the interface roughness along the growth direction within the interfaces. We show that it is necessary to include this feature, previously neglected by theoretical models, when heterointerfaces characterized by finite interface widths are taken into consideration.
△ Less
Submitted 24 April, 2020; v1 submitted 3 February, 2020;
originally announced February 2020.
-
Light effective hole mass in undoped Ge/SiGe quantum wells
Authors:
M. Lodari,
A. Tosato,
D. Sabbagh,
M. A. Schubert,
G. Capellini,
A. Sammak,
M. Veldhorst,
G. Scappucci
Abstract:
We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities ($2.0-11\times10^{11}$ cm$^{-2}$) in top-gated field effect transistors by positioning the strained buried Ge channel at different depths of 12 and 44 nm from the surface. From the thermal dam** of the amplitude of Shubnikov-de Haas oscillations, we meas…
▽ More
We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities ($2.0-11\times10^{11}$ cm$^{-2}$) in top-gated field effect transistors by positioning the strained buried Ge channel at different depths of 12 and 44 nm from the surface. From the thermal dam** of the amplitude of Shubnikov-de Haas oscillations, we measure a light mass of $0.061m_e$ at a density of $2.2\times10^{11}$ cm$^{-2}$. We confirm the theoretically predicted dependence of increasing mass with density and by extrapolation we find an effective mass of $\sim0.05m_e$ at zero density, the lightest effective mass for a planar platform that demonstrated spin qubits in quantum dots.
△ Less
Submitted 20 May, 2019;
originally announced May 2019.
-
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions
Authors:
T. Grange,
D. Stark,
G. Scalari,
J. Faist,
L. Persichetti,
L. Di Gaspare,
M. De Seta,
M. Ortolani,
D. J. Paul,
G. Capellini,
S. Birner,
M. Virgilio
Abstract:
n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the Ge/SiGe case, the gain is found to be much more robust to temperature increase, enabling operation up to room temperature. The better temperature robustness with…
▽ More
n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the Ge/SiGe case, the gain is found to be much more robust to temperature increase, enabling operation up to room temperature. The better temperature robustness with respect to III-V is attributed to the much weaker interaction with optical phonons. The effect of lower interface quality is investigated and can be partly overcome by engineering smoother quantum confinement via multiple barrier heights.
△ Less
Submitted 30 November, 2018;
originally announced November 2018.
-
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells
Authors:
M. Montanari,
M. Virgilio,
C. L. Manganelli,
P. Zaumseil,
M. H. Zoellner,
Y. Hou,
M. A. Schubert,
L. Persichetti,
L. Di Gaspare,
M. De Seta,
E. Vitiello,
E. Bonera,
F. Pezzoli,
G. Capellini
Abstract:
In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates. The obtained high epitaxial quality demonstrates that strain symmetrization is not a mandatory requirement for few quantum-well repetitions. Photoluminescence data, supported by a thorough theoretical modeling, allow u…
▽ More
In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates. The obtained high epitaxial quality demonstrates that strain symmetrization is not a mandatory requirement for few quantum-well repetitions. Photoluminescence data, supported by a thorough theoretical modeling, allow us to unambiguously disentangle the spectral features of the quantum wells from those originating in the virtual substrate and to evaluate the impact on the optical properties of key parameters, such as quantum confinement, layer compositions, excess carrier density, and lattice strain. This detailed understanding of the radiative recombination processes is of paramount importance for the development of Ge/GeSi-based optical devices.
△ Less
Submitted 21 November, 2018;
originally announced November 2018.
-
Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology
Authors:
A. Sammak,
D. Sabbagh,
N. W. Hendrickx,
M. Lodari,
B. Paquelet Wuetz,
L. Yeoh,
M. Bollani,
M. Virgilio,
M. A. Schubert,
P. Zaumseil,
G. Capellini,
M. Veldhorst,
G. Scappucci
Abstract:
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface states degrade the electrical properties of the starting material. In this paper we demonstrate a two-dimensional hole gas of high mobility ($5\times 10^{5}$ cm…
▽ More
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface states degrade the electrical properties of the starting material. In this paper we demonstrate a two-dimensional hole gas of high mobility ($5\times 10^{5}$ cm$^2$/Vs) in a very shallow strained germanium channel, which is located only 22 nm below the surface. This high mobility leads to mean free paths $\approx6 μm$, setting new benchmarks for holes in shallow FET devices. Carriers are confined in an undoped Ge/SiGe heterostructure with reduced background contamination, sharp interfaces, and high uniformity. The top-gate of a dopant-less field effect transistor controls the carrier density in the channel. The high mobility, along with a percolation density of $1.2\times 10^{11}\text{ cm}^{-2}$, light effective mass (0.09 m$_e$), and high g-factor (up to $7$) highlight the potential of undoped Ge/SiGe as a low-disorder material platform for hybrid quantum technologies.
△ Less
Submitted 7 September, 2018;
originally announced September 2018.
-
Gate-controlled quantum dots and superconductivity in planar germanium
Authors:
N. W. Hendrickx,
D. P. Franke,
A. Sammak,
M. Kouwenhoven,
D. Sabbagh,
L. Yeoh,
R. Li,
M. L. V. Tagliaferri,
M. Virgilio,
G. Capellini,
G. Scappucci,
M. Veldhorst
Abstract:
Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel strategies for quantum control. The involved semiconductor materials, however, suffer from disorder, hyperfine interactions or lack of planar technology. Here we reali…
▽ More
Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel strategies for quantum control. The involved semiconductor materials, however, suffer from disorder, hyperfine interactions or lack of planar technology. Here we realise an approach that overcomes these issues altogether and integrate gate-defined quantum dots and superconductivity into a material system with strong spin-orbit coupling. In our germanium heterostructures, heavy holes with mobilities exceeding 500,000 cm$^2$/Vs are confined in shallow quantum wells that are directly contacted by annealed aluminium leads. We demonstrate gate-tunable superconductivity and find a characteristic voltage $I_cR_n$ that exceeds 10 $μ$V. Germanium therefore has great promise for fast and coherent quantum hardware and, being compatible with standard manufacturing, could become a leading material in the quantum revolution.
△ Less
Submitted 26 January, 2018;
originally announced January 2018.
-
Bottom-up assembly of metallic germanium
Authors:
G. Scappucci,
W. M. Klesse,
L. A. Yeoh,
D. J. Carter,
O. Warschkow,
N. A. Marks,
D. L. Jaeger,
G. Capellini,
M. Y. Simmons,
A. R. Hamilton
Abstract:
Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material,[1] a light emitting medium in silicon-integrated lasers,[2,3] and a plasmonic conductor for bio-sensing.[4,5] Common to these diverse applications is…
▽ More
Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material,[1] a light emitting medium in silicon-integrated lasers,[2,3] and a plasmonic conductor for bio-sensing.[4,5] Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp do** profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (10^19 to 10^20 cm-3) low-resistivity (10^-4 Ohmcm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based do** technologies.[6] We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory.
△ Less
Submitted 20 March, 2015;
originally announced March 2015.
-
Influence of encapsulation temperature on Ge:P delta-doped layers
Authors:
G. Scappucci,
G. Capellini,
M. Y. Simmons
Abstract:
We present a systematic study of the influence of the encapsulation temperature on dopant confinement and electrical properties of Ge:P delta-doped layers. For increasing growth temperature we observe an enhancement of the electrical properties accompanied by an increased segregation of the phosphorous donors, resulting in a slight broadening of the delta-layer. We demonstrate that a step-flow g…
▽ More
We present a systematic study of the influence of the encapsulation temperature on dopant confinement and electrical properties of Ge:P delta-doped layers. For increasing growth temperature we observe an enhancement of the electrical properties accompanied by an increased segregation of the phosphorous donors, resulting in a slight broadening of the delta-layer. We demonstrate that a step-flow growth achieved at 530 C provides the best compromise between high crystal quality and minimal dopant redistribution, with an electron mobility ~ 128 cm^2/Vs at a carrier density 1.3x10^14 cm-2, and a 4.2 K phase coherence length of ~ 180 nm.
△ Less
Submitted 3 December, 2009;
originally announced December 2009.
-
Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy
Authors:
G. Scappucci,
G. Capellini,
W. C. T. Lee,
M. Y. Simmons
Abstract:
In this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001. The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat Ge(001) surface with a scanning tunneling microscope tip operating in ultra-high vacuum. The influence of the tip-to-sample bias on the lithographic process have been investi…
▽ More
In this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001. The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat Ge(001) surface with a scanning tunneling microscope tip operating in ultra-high vacuum. The influence of the tip-to-sample bias on the lithographic process have been investigated. Lithographic patterns with feature-sizes from 200 nm to 1.8 nm have been achieved by varying the tip-to-sample bias. These results open up the possibility of a scanning-probe lithography approach to the fabrication of future atomic-scale devices in germanium.
△ Less
Submitted 3 December, 2009;
originally announced December 2009.
-
Ultra-dense phosphorus in germanium delta-doped layers
Authors:
G. Scappucci,
G. Capellini,
W. C. T. Lee,
M. Y. Simmons
Abstract:
Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in ultra-high vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed by thermal incorporation of P into the lattice and epitaxial Ge overgrowth by molecular beam epitaxy. Structural and electrical characterizations show that P atoms are confined, with minimal diffusion, into an ultra-na…
▽ More
Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in ultra-high vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed by thermal incorporation of P into the lattice and epitaxial Ge overgrowth by molecular beam epitaxy. Structural and electrical characterizations show that P atoms are confined, with minimal diffusion, into an ultra-narrow 2-nm-wide layer with an electrically-active sheet carrier concentration of 4x10^13 cm-2 at 4.2 K. These results open up the possibility of ultra-narrow source/drain regions with unprecedented carrier densities for Ge n-channel field effect transistors.
△ Less
Submitted 3 December, 2009;
originally announced December 2009.
