Showing 1–23 of 23 results for author: Cantarero, A

Conformal Predictions for Probabilistically Robust Scalable Machine Learning Classification

Authors: Alberto Carlevaro, Teodoro Alamo Cantarero, Fabrizio Dabbene, Maurizio Mongelli

Abstract: Conformal predictions make it possible to define reliable and robust learning algorithms. But they are essentially a method for evaluating whether an algorithm is good enough to be used in practice. To define a reliable learning framework for classification from the very beginning of its design, the concept of scalable classifier was introduced to generalize the concept of classical classifier by… ▽ More Conformal predictions make it possible to define reliable and robust learning algorithms. But they are essentially a method for evaluating whether an algorithm is good enough to be used in practice. To define a reliable learning framework for classification from the very beginning of its design, the concept of scalable classifier was introduced to generalize the concept of classical classifier by linking it to statistical order theory and probabilistic learning theory. In this paper, we analyze the similarities between scalable classifiers and conformal predictions by introducing a new definition of a score function and defining a special set of input variables, the conformal safety set, which can identify patterns in the input space that satisfy the error coverage guarantee, i.e., that the probability of observing the wrong (possibly unsafe) label for points belonging to this set is bounded by a predefined $\varepsilon$ error level. We demonstrate the practical implications of this framework through an application in cybersecurity for identifying DNS tunneling attacks. Our work contributes to the development of probabilistically robust and reliable machine learning models. △ Less

Submitted 15 March, 2024; originally announced March 2024.

Comments: 19 pages, 6 figures, journal paper

MSC Class: 68T37 (Primary) ACM Class: I.5.3

On the vibrational properties of transition metal doped ZnO: surface, defect, and bandgap engineering

Authors: Viviane M. A. Lage, Carlos Rodríguez-Fernández, Felipe S. Vieira, Rafael T. da Silva, Maria Inês B. Bernardi, Maurício M de Lima Jr., Andrés Cantarero, Hugo B. de Carvalho

Abstract: We present a comprehensive study on the structure and optical properties of Mn-and Co-doped ZnO samples prepared via solid-state reaction method with different dopant concentrations and atmospheres. The samples were structural and chemically characterized via X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray excited photoelectron spectroscopy. The opt… ▽ More We present a comprehensive study on the structure and optical properties of Mn-and Co-doped ZnO samples prepared via solid-state reaction method with different dopant concentrations and atmospheres. The samples were structural and chemically characterized via X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray excited photoelectron spectroscopy. The optical characterization was performed via Raman, photoluminescence, and diffuse photoreflectance spectroscopies. Emphasis was done on the studies of their vibrational properties. The structural data confirm the incorporation of Mn and Co ions into the wurtzite ZnO lattice. It is demonstrated that the usual observed additional bands in the Raman spectrum of transitional metal (TM) doped ZnO are related to structural damage, deriving from the do** process, and surface effects. The promoted surface optical phonons (SOP) are of Fröhlich character and, together with the longitudinal optical (LO) polar phonons, are directly dependent on the ZnO electronic structure. The enhancement of SOP and LO modes with TM-do** is explained in terms of nonhomogeneous do**, with the dopants concentrating mainly on the surface of grains, and a resonance effect due to the decrease of the ZnO bandgap promoted by the introduction of the 3d TM levels within the ZnO bandgap. We also discuss the origin of the controversial vibrational mode commonly observed in the Mn-doped ZnO system. It is stated that the observation of the analyzed vibrational properties is a signature of substitutional do** of the ZnO structure with tuning of ZnO optical absorption into the visible range of the electromagnetic spectrum. △ Less

Submitted 1 August, 2023; originally announced August 2023.

Monolayer-to-mesoscale modulation of the optical properties in 2D CrI3 mapped by hyperspectral microscopy

Authors: Marta Galbiati, Fernando Ramiro-Manzano, José Joaquín Pérez Grau, Fernando Cantos-Prieto, Jaume Meseguer-Sanchez, Ivona Košić, Filippo Mione, Ana Pallarés Vilar, Andrés Cantarero, David Soriano, Efrén Navarro-Moratalla

Abstract: Magnetic 2D materials hold promise to change the miniaturization paradigm of unidirectional photonic components. However, the integration of these materials in devices hinges on the accurate determination of the optical properties down to the monolayer limit, which is still missing. By using hyperspectral wide-field imaging we reveal a non-monotonic thickness dependence of the complex optical diel… ▽ More Magnetic 2D materials hold promise to change the miniaturization paradigm of unidirectional photonic components. However, the integration of these materials in devices hinges on the accurate determination of the optical properties down to the monolayer limit, which is still missing. By using hyperspectral wide-field imaging we reveal a non-monotonic thickness dependence of the complex optical dielectric function in the archetypal magnetic 2D material CrI3 extending across different length scales: onsetting at the mesoscale, peaking at the nanoscale and decreasing again down to the single layer. These results portray a modification of the electronic properties of the material and align with the layer-dependent magnetism in CrI3, shedding light into the long-standing structural conundrum in this material. The unique modulation of the complex dielectric function from the monolayer up to more than 100 layers will be instrumental for understanding and manipulating the magneto-optical effects of magnetic 2D materials. △ Less

Submitted 3 January, 2023; originally announced January 2023.

Polarization-dependent excitons and plasmon activity in nodal-line semimetal ZrSiS

Authors: Juan J. Meléndez, Andrés Cantarero

Abstract: The optical properties of bulk ZrSiS nodal-line semimetal are theoretically studied within a many-body formalism. The G0W0 bands are similar to those calculated within the density functional theory, except near the Γ point; in particular, no significant differences are found around the Fermi energy. On the other hand, the solution of the Bethe-Salpeter equation reveals a significant excitonic acti… ▽ More The optical properties of bulk ZrSiS nodal-line semimetal are theoretically studied within a many-body formalism. The G0W0 bands are similar to those calculated within the density functional theory, except near the Γ point; in particular, no significant differences are found around the Fermi energy. On the other hand, the solution of the Bethe-Salpeter equation reveals a significant excitonic activity, mostly as dark excitons which appear in a wide energy range. Bright excitons, on the contrary, are less numerous, but their location and intensity depend greatly on the polarization of the incident electric field, as the absorption coefficient itself does. The binding energy of these excitons correlate well with their spatial distribution functions. In any case, a good agreement with available experimental data for absorption-reflection is achieved. Finally, the possible activation of plasma oscillations at low energies is discarded, because these are damped by producing electron-hole pairs, more importantly for q along the Γ-M path. △ Less

Submitted 27 May, 2021; originally announced May 2021.

Raman Signal Reveals the Rhombohedral Crystallographic Structure in Ultra-thin Layers of Bismuth Thermally Evaporated on Amorphous Substrate

Authors: Carlos Rodríguez-Fernández, Kim Akius, Mauricio Morais de Lima Jr., Andrés Cantarero, Jan M. van Ruitenbeek, Carlos Sabater

Abstract: Under the challenge of growing a single bilayer of Bi oriented in the (111) crystallographic direction over amorphous substrates, we have studied different thicknesses of Bi thermally evaporated onto silicon oxide in order to shed light on the dominant atomic structures and their oxidation. We have employed atomic force microscope, X-ray diffraction, and scanning electron microscope approaches to… ▽ More Under the challenge of growing a single bilayer of Bi oriented in the (111) crystallographic direction over amorphous substrates, we have studied different thicknesses of Bi thermally evaporated onto silicon oxide in order to shed light on the dominant atomic structures and their oxidation. We have employed atomic force microscope, X-ray diffraction, and scanning electron microscope approaches to demonstrate that Bi is crystalline and oriented in the (111) direction for thicknesses over 20 nm. Surprisingly, Raman spectroscopy indicates that the rhombohedral structure is preserved even for ultra-thin layers of Bi, down to $\sim 5$ nm. Moreover, the signals also reveal that bismuth films exposed to ambient conditions do not suffer major surface oxidation. △ Less

Submitted 16 March, 2021; originally announced March 2021.

Comments: 6 pages,4 figures

Coverage Enhancement for Vehicles

Authors: Stefan Runeson, Ali Zaidi, Ana Cantarero

Abstract: The Third Generation Partnership Project (3GPP) has standardized Coverage Enhancement (CE) for Internet-of-Things (IoT) to connect devices in challenging radio conditions with cellular networks. CE is based on the principle of prolonged transmission time that exploits the fact that many IoT applications have relaxed requirements on data rate and latency, and the coverage can be significantly boost… ▽ More The Third Generation Partnership Project (3GPP) has standardized Coverage Enhancement (CE) for Internet-of-Things (IoT) to connect devices in challenging radio conditions with cellular networks. CE is based on the principle of prolonged transmission time that exploits the fact that many IoT applications have relaxed requirements on data rate and latency, and the coverage can be significantly boosted by repeating transmissions for such applications. However, CE consumes a lot of radio resources and should be implemented carefully for different applications. This paper presents an end-to-end concept for realizing dynamic use of CE for connected vehicles in a resource efficient way. The proposed framework has the potential of improving coverage by around 10dB for low data rate connected vehicle applications, based on the 3GPP Long Term Evolution (LTE) standard. △ Less

Submitted 8 January, 2021; originally announced January 2021.

Comments: 4 pages, 6 figures, submitted to IEEE Communications Standards Magazine

Defect Induced Room Temperature Ferromagnetism in High Quality Co-doped ZnO Bulk Samples

Authors: M. P. F. de Godoy, X. Gratens, V. A. Chitta, A. Mesquita, M. M de Lima Jr., A. Cantarero, G. Rahman, J. M. Morbec, H. B. de Carvalho

Abstract: The nature of the often reported room temperature ferromagnetism in transition metal doped oxides is still a matter of huge debate. Herein we report on room temperature ferromagnetism in high quality Co-doped ZnO (Zn1-xCoxO) bulk samples synthesized via standard solid-state reaction route. Reference paramagnetic Co-doped ZnO samples with low level of structural defects are subjected to heat treatm… ▽ More The nature of the often reported room temperature ferromagnetism in transition metal doped oxides is still a matter of huge debate. Herein we report on room temperature ferromagnetism in high quality Co-doped ZnO (Zn1-xCoxO) bulk samples synthesized via standard solid-state reaction route. Reference paramagnetic Co-doped ZnO samples with low level of structural defects are subjected to heat treatments in a reductive atmosphere in order to introduce defects in the samples in a controlled way. A detailed structural analysis is carried out in order to characterize the induced defects and their concentration. The magnetometry revealed the coexistence of a paramagnetic and a ferromagnetic phase at room temperature in straight correlation with the structural properties. The saturation magnetization is found to increase with the intensification of the heat treatment, and, therefore, with the increase of the density of induced defects. The magnetic behavior is fully explained in terms of the bound magnetic polaron model. Based on the experimental findings, supported by theoretical calculations, we attribute the origin of the observed defect-induced-ferromagnetism to the ferromagnetic coupling between the Co ions mediated by magnetic polarons due to zinc interstitial defects. △ Less

Submitted 28 July, 2020; originally announced July 2020.

Comments: 33 pages, 9 figures

Journal ref: Journal of Alloys and Compounds 859 (2021) 157772

Thermally Tunable Surface Acoustic Wave Cavities

Authors: André Luiz Oliveira Bilobran, Alberto García-Cristóbal, Paulo Ventura dos Santos, Andrés Cantarero, Mauricio Morais de Lima Jr

Abstract: We experimentally demonstrate the dynamical tuning of the acoustic field in a surface acoustic wave (SAW) cavity defined by a periodic arrangement of metal stripes on LiNbO3 substrate. Applying a DC voltage to the ends of the metal grid results in a temperature rise due to resistive heating that changes the frequency response of the device up to 0.3%, which can be used to control the acoustic tran… ▽ More We experimentally demonstrate the dynamical tuning of the acoustic field in a surface acoustic wave (SAW) cavity defined by a periodic arrangement of metal stripes on LiNbO3 substrate. Applying a DC voltage to the ends of the metal grid results in a temperature rise due to resistive heating that changes the frequency response of the device up to 0.3%, which can be used to control the acoustic transmission through the structure. The time scale of the switching is demonstrated to be of about 200 ms. In addition, we have also performed finite element simulations of the transmission spectrum of a model system which exhibit a temperature dependence consistent with the experimental data. The advances shown here enable easy, continuous, dynamical control and could be applied for a variety of substrates. △ Less

Submitted 12 March, 2020; v1 submitted 11 March, 2020; originally announced March 2020.

Nanowires: A route to efficient thermoelectric devices

Authors: F. Dominguez-Adame, M . Martin-Gonzalez, D. Sanchez, A. Cantarero

Abstract: Miniaturization of electronic devices aims at manufacturing ever smaller products, from mesoscopic to nanoscopic sizes. This trend is challenging because the increased levels of dissipated power demands a better understanding of heat transport in small volumes. A significant amount of the consumed energy is transformed into heat and dissipated to the environment. Thermoelectric materials offer the… ▽ More Miniaturization of electronic devices aims at manufacturing ever smaller products, from mesoscopic to nanoscopic sizes. This trend is challenging because the increased levels of dissipated power demands a better understanding of heat transport in small volumes. A significant amount of the consumed energy is transformed into heat and dissipated to the environment. Thermoelectric materials offer the possibility to harness dissipated energy and make devices less energy-demanding. Heat-to-electricity conversion requires materials with a strongly suppressed thermal conductivity but still high electronic conduction. Nanowires can meet nicely these two requirements because enhanced phonon scattering at the surface and defects reduces the lattice thermal conductivity while electric conductivity is not deteriorated, leading to an overall remarkable thermoelectric efficiency. Therefore, nanowires are regarded as a promising route to achieving valuable thermoelectric materials at the nanoscale. In this paper, we present an overview of key experimental and theoretical results concerning the thermoelectric properties of nanowires. The focus of this review is put on the physical mechanisms by which the efficiency of nanowires can be improved. Phonon scattering at surfaces and interfaces, enhancement of the power factor by quantum effects and topological protection of electron states to prevent the degradation of electrical conductivity in nanowires are thoroughly discussed. △ Less

Submitted 3 June, 2019; v1 submitted 10 January, 2019; originally announced January 2019.

Journal ref: Physica E 113, 213 (2019)

Thermal conductivity of group-IV Semiconductors from a Kinetic-Collective Model

Authors: C. de Tomas, A. Cantarero, A. F. Lopeandia, F. X. Alvarez

Abstract: The thermal conductivity of several diamond-like materials is calculated from a kinetic-collective model. From this approach, a thermal conductivity expression is obtained that includes a transition from a kinetic (free) to a collective (hydrodynamic) behavior of the phonon field. The expression contains only three parameters. Once fitted to natural occurring silicon, the same parameters for the o… ▽ More The thermal conductivity of several diamond-like materials is calculated from a kinetic-collective model. From this approach, a thermal conductivity expression is obtained that includes a transition from a kinetic (free) to a collective (hydrodynamic) behavior of the phonon field. The expression contains only three parameters. Once fitted to natural occurring silicon, the same parameters for the other materials are directly calculated from theoretical relations. The results are in good agreement with experimental data. △ Less

Submitted 2 February, 2014; originally announced February 2014.

Journal ref: Proc. Math. Phys. Eng. Sci. 470(2169), 20140371 (2014)

From kinetic to collective behavior in thermal transport on semiconductors and semiconductor nanostructures

Authors: C. de Tomas, A. Cantarero, A. F. Lopeandia, F. X. Alvarez

Abstract: We present a model which deepens into the role that normal scattering has on the thermal conductivity in semiconductor bulk, micro and nanoscale samples. Thermal conductivity as a function of the temperature undergoes a smooth transition from a kinetic to a collective regime that depends on the importance of normal scattering events. We demonstrate that in this transition, the key point to fit exp… ▽ More We present a model which deepens into the role that normal scattering has on the thermal conductivity in semiconductor bulk, micro and nanoscale samples. Thermal conductivity as a function of the temperature undergoes a smooth transition from a kinetic to a collective regime that depends on the importance of normal scattering events. We demonstrate that in this transition, the key point to fit experimental data is changing the way to perform the average on the scattering rates. We apply the model to bulk Si with different isotopic compositions obtaining an accurate fit. Then we calculate the thermal conductivity of Si thin films and nanowires by only introducing the effective size as additional parameter. The model provides a better prediction of the thermal conductivity behavior valid for all temperatures and sizes above 30 nm with a single expression. Avoiding the introduction of confinement or quantum effects, the model permits to establish the limit of classical theories in the study of the thermal conductivity in nanoscopic systems. △ Less

Submitted 14 February, 2014; v1 submitted 26 October, 2013; originally announced October 2013.

Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties

Authors: L. C. O. Dacal, A. Cantarero

Abstract: Most III-V semiconductors, which acquire the zinc-blende phase as bulk materials, adopt the metastable wurtzite phase when grown in the form of nanowires. These are new semiconductors with new optical properties, in particular, a different electronic band gap when compared with that grown in the zinc-blende phase. The electronic gap of wurtzite InAs at the Gamma-point of the Brillouin zone (E0 gap… ▽ More Most III-V semiconductors, which acquire the zinc-blende phase as bulk materials, adopt the metastable wurtzite phase when grown in the form of nanowires. These are new semiconductors with new optical properties, in particular, a different electronic band gap when compared with that grown in the zinc-blende phase. The electronic gap of wurtzite InAs at the Gamma-point of the Brillouin zone (E0 gap) has been recently measured, E0 = 0.46 eV at low temperature. The electronic gap at the A point of the Brillouin zone (equivalent to the L point in the zinc-blende structure, E1) has also been obtained recently based on a resonant Raman scattering experiment. In this work, we calculate the band structure of InAs in the zinc-blende and wurtzite phases, using the full potential linearized augmented plane wave method, including spin-orbit interaction. The electronic band gap has been improved through the modified Becke-Johnson exchange-correlation potential. Both the E0 and E1 gaps agree very well with the experiment. From the calculations, a crystal field splitting of 0.122 eV and a spin-orbit splitting of 0.312 eV (the experimental value in zinc-blende InAs is 0.4 eV) has been obtained. Finally, we calculate the dielectric function of InAs in both the zinc-blende and wurtzite phases and a comparative discussion is given. △ Less

Submitted 26 February, 2014; v1 submitted 21 October, 2013; originally announced October 2013.

Comments: 5 pages, 4 figures

Journal ref: Materials Research Express 1, 015702 (2014)

Thermoelectric properties of atomic-thin silicene and germanene nano-structures

Authors: K. Yang, S. Cahangirov, A. Cantarero, A. Rubio, R. D'Agosta

Abstract: The thermoelectric properties in one- and two-dimensional silicon and germanium structures have been investigated using first-principle density functional techniques and linear response for the thermal and electrical transport. We have considered here the two-dimensional silicene and germanene, together with nano-ribbons of different widths. For the nano-ribbons, we have also investigated the poss… ▽ More The thermoelectric properties in one- and two-dimensional silicon and germanium structures have been investigated using first-principle density functional techniques and linear response for the thermal and electrical transport. We have considered here the two-dimensional silicene and germanene, together with nano-ribbons of different widths. For the nano-ribbons, we have also investigated the possibility of nano-structuring these systems by mixing silicon and germanium. We found that the figure of merit at room temperature of these systems is remarkably high, up to 2.5. △ Less

Submitted 3 October, 2013; originally announced October 2013.

Comments: 15 pages, 18 figures, revtex4-1

LDA+U and tight-binding electronic structure of InN nanowires

Authors: A. Molina-Sánchez, A. García-Cristóbal, A. Cantarero, A. Terentjevs, G. Cicero

Abstract: In this paper we employ a combined {\it ab initio} and tight-binding approach to obtain the electronic and optical properties of hydrogenated InN nanowires. We first discuss InN band structure for the wurtzite structure calculated at the LDA+U level and use this information to extract the parameters needed for an empirical tight-binging implementation. These parameters are then employed to calcula… ▽ More In this paper we employ a combined {\it ab initio} and tight-binding approach to obtain the electronic and optical properties of hydrogenated InN nanowires. We first discuss InN band structure for the wurtzite structure calculated at the LDA+U level and use this information to extract the parameters needed for an empirical tight-binging implementation. These parameters are then employed to calculate the electronic and optical properties of InN nanowires in a diameter range that would not be affordable by {\it ab initio} techniques. The reliability of the large nanowires results is assessed by explicitly comparing the electronic structure of a small diameter wire studied both at LDA+U and tight-binding level. △ Less

Submitted 25 September, 2013; originally announced September 2013.

Journal ref: Physical Review B 82, 165324 (2010)

Optical phonon modes of wurtzite InP

Authors: E. G. Gadret, T. Chiaramonte, M. A. Cotta, F. Iikawa, M. M. de Lima Jr, A. Cantarero, J. R. Madureira

Abstract: Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering spectroscopy. The wires were grown along the [0001] axis by the vapor-liquid-solid method. The A1(TO), E2h and E1(TO) phonon modes of the wurtzite symmetry were identified by using light linearly polarized along different directions in backscattering configuration. Additionally, forbidden longitudi… ▽ More Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering spectroscopy. The wires were grown along the [0001] axis by the vapor-liquid-solid method. The A1(TO), E2h and E1(TO) phonon modes of the wurtzite symmetry were identified by using light linearly polarized along different directions in backscattering configuration. Additionally, forbidden longitudinal optical modes have also been observed. Furthermore, by applying an extended 11-parameter rigid-ion model the complete dispersion relations of InP in the wurtzite phase have been calculated, showing a good agreement with the Raman experimental data. △ Less

Submitted 6 December, 2012; originally announced December 2012.

Semi-quantum approach to molecular dynamics simulation of thermal properties of low-dimensional nanostructures

Authors: Alexander V. Savin, Yuriy A. Kosevich, Andres Cantarero

Abstract: We present a detailed description of semi-quantum molecular dynamics simulation of stochastic dynamics of a system of interacting particles. Within this approach, the dynamics of the system is described with the use of classical Newtonian equations of motion in which the effects of phonon quantum statistics are introduced through random Langevin-like forces with a specific power spectral density (… ▽ More We present a detailed description of semi-quantum molecular dynamics simulation of stochastic dynamics of a system of interacting particles. Within this approach, the dynamics of the system is described with the use of classical Newtonian equations of motion in which the effects of phonon quantum statistics are introduced through random Langevin-like forces with a specific power spectral density (the color noise). The color noise describes the interaction of the molecular system with the thermostat. We apply this technique to the simulation of thermal properties and heat transport in different low-dimensional nanostructures. We describe the determination of temperature in quantum lattice systems, to which the equipartition limit is not applied. We show that one can determine the temperature of such system from the measured power spectrum and temperature- and relaxation-rate-independent density of vibrational (phonon) states. We simulate the specific heat and heat transport in carbon nanotubes, as well as the heat transport in molecular nanoribbons with perfect (atomically smooth) and rough (porous) edges, and in nanoribbons with strongly anharmonic periodic interatomic potentials. We show that the effects of quantum statistics of phonons are essential for the carbon nanotube in the whole temperature range T<500K, in which the values of the specific heat and thermal conductivity of the nanotube are considerably less than that obtained within the description based on classical statistics of phonons. △ Less

Submitted 20 July, 2012; v1 submitted 26 December, 2011; originally announced December 2011.

Comments: 19 pages, 15 figures, 2 tables

Finite Size Effects on the Optical Transitions in Quantum Rings under a Magnetic Field

Authors: Tatyana V. Bandos, Andres Cantarero, Alberto Garcia-Cristobal

Abstract: We present a theoretical study of the energy spectrum of single electron and hole states in quantum dots of annular geometry under a high magnetic field along the ring axis in the frame of uncorrelated electron-hole theory. We predict the periodic disappearance of the optical emission of the electron-hole pair as the magnetic field increases, as a consequence of the finite height of the barriers… ▽ More We present a theoretical study of the energy spectrum of single electron and hole states in quantum dots of annular geometry under a high magnetic field along the ring axis in the frame of uncorrelated electron-hole theory. We predict the periodic disappearance of the optical emission of the electron-hole pair as the magnetic field increases, as a consequence of the finite height of the barriers. The model has been applied to semiconductor rings of various internal and external radii, giving as limiting cases the disk and antidot. △ Less

Submitted 1 January, 2007; v1 submitted 16 April, 2006; originally announced April 2006.

Comments: 22 pages, 7 figures, LaTeX, published in Eur. Phys. J. B 53, 99-108 (2006)

Journal ref: Eur. Phys. J. B 53, 99-108 (2006)

Raman and infrared studies of La_1-ySr_yMn_1-xM_xO_3 (M=Cr, Co, Cu, Zn, Sc or Ga): Oxygen disorder and local vibrational modes

Authors: A. Dubroka, J. Humlicek, M. V. Abrashev, Z. V. Popovic, F. Sapina, A. Cantarero

Abstract: We present results of our study of polarized Raman scattering and infrared reflectivity of rhombohedral ceramic La_1-ySr_yMn_1-xM_xO_3 manganites in the temperature range between 77 and 320K. In our samples, a part of the Mn atoms is substituted by M = Cr, Co, Cu, Zn, Sc, or Ga with x in the range 0 -- 0.1. The hole concentration was kept at the optimal value of about 32% by tuning the Sr conten… ▽ More We present results of our study of polarized Raman scattering and infrared reflectivity of rhombohedral ceramic La_1-ySr_yMn_1-xM_xO_3 manganites in the temperature range between 77 and 320K. In our samples, a part of the Mn atoms is substituted by M = Cr, Co, Cu, Zn, Sc, or Ga with x in the range 0 -- 0.1. The hole concentration was kept at the optimal value of about 32% by tuning the Sr content y. We have monitored the distortions of the oxygen sublattice by the presence of broad bands in the Raman spectra, the increase of d.c. resistivity extracted from the infrared reflectivity, and the change of the critical temperature of the ferromagnetic transition. Our results support the idea, that these properties are mainly determined by the radius of the substituent ion, its electronic and magnetic structure playing only a minor role. Furthermore, the Raman spectra exhibit an additional A_g-like high frequency mode attributed to the local breathing vibration of oxygens surrounding the substituent ion. Its frequency and intensity strongly depend on the type of the substituent. In the Co-substituted sample, the mode anomalously softens when going from 300 to 77K. The frequency of the bulk A_{1g} mode depends linearly on the angle of the rhombohedral distortion. △ Less

Submitted 8 June, 2006; v1 submitted 25 July, 2005; originally announced July 2005.

Comments: 11 pages, 11 Figures, best-fit values table added, a discussion added

Journal ref: Phys. Rev. B 73, 224401 (2006)

Effect of isotopic mass on the photoluminescence spectra of beta zinc sulfide

Authors: F. J. Manjon, M. Mollar, B. Mari, N. Garro, A. Cantarero, R. Lauck, M. Cardona

Abstract: Zinc sulfide is a wide bandgap semiconductor which crystallizes in either the wurtzite modification (a-ZnS), the zincblende modification (b-ZnS) or as one of several similar tetrahedrally coordinated polytypes. In this work, we report a photoluminescence study of different samples of isotopically pure b-ZnS crystals, and crystals with the natural isotopic abundances, at 15 and 77 K. The derivati… ▽ More Zinc sulfide is a wide bandgap semiconductor which crystallizes in either the wurtzite modification (a-ZnS), the zincblende modification (b-ZnS) or as one of several similar tetrahedrally coordinated polytypes. In this work, we report a photoluminescence study of different samples of isotopically pure b-ZnS crystals, and crystals with the natural isotopic abundances, at 15 and 77 K. The derivatives of the free and bound exciton energies on isotopic mass have been obtained. They allow us to estimate the contribution of the zinc and sulfur vibrations to the bandgap renormalization energy by electron-phonon interaction. A two-oscillator model based on the zinc and sulfur renormalization energies has been used to account for the temperature dependence of the bandgap energy in ZnS. The results are compared with those found for other tetrahedrally coordinated semiconductors. △ Less

Submitted 11 October, 2004; originally announced October 2004.

Comments: 19 pages, 4 Postscript figures, sent to Solid State Communications

The effect of Cu substitution on the A1g mode of La(0.7)Sr(0.3)MnO3 manganites

Authors: G. De Marzi, H. J. Trodahl, J. Bok, A. Cantarero, F. Sapina

Abstract: We report on the first Raman data of Cu substituted La(1-y)Sr(y)Mn(1-x)Cu(x)O3 (0 < x < 0.10 and 0.17 < y < 0.3, accordingly in order to have the same Mn(4+)/[Mn(4+)+Mn(3+)] ratio), collected in the frequency range 100-900 cm-1 and at room temperature, with parallel and crossed polarizations of the incident and scattered light. Spectra were fitted with a Drude-Lorentz model, and peaks at 190-220… ▽ More We report on the first Raman data of Cu substituted La(1-y)Sr(y)Mn(1-x)Cu(x)O3 (0 < x < 0.10 and 0.17 < y < 0.3, accordingly in order to have the same Mn(4+)/[Mn(4+)+Mn(3+)] ratio), collected in the frequency range 100-900 cm-1 and at room temperature, with parallel and crossed polarizations of the incident and scattered light. Spectra were fitted with a Drude-Lorentz model, and peaks at 190-220 and 430 cm-1, together with two broad structures centered at near 500 and 670 cm-1, have been found. We also have observed that the A1g mode is substantially shifted with increasing Cu substitution. The A1g phonon shift is a linear function of the tolerance factor t and the rhombohedral angle, thus following the structural changes of the MnO6 octahedra in the system. △ Less

Submitted 14 May, 2003; originally announced May 2003.

Comments: 6 pages, 4 figures, SSC (accepted)

Optical studies of gap, hop** energies and the Anderson-Hubbard parameter in the zigzag-chain compound SrCuO2

Authors: Z. V. Popovic, V. A. Ivanov, M. J. Konstantinovic, A. Cantarero, J. Martinez-Pastor, D. Olguin, M. I. Alonso, M. Garriga, O. P. Khuong, A. Vietkin, V. V. Moshchalkov

Abstract: We have investigated the electronic structure of the zigzag ladder (chain) compound SrCuO2 combining polarized optical absorption, reflection, photoreflectance and pseudo-dielectric function measurements with the model calculations. These measurements yield an energy gap of 1.42 eV (1.77 eV) at 300 K along (perpendicular) to the Cu-O chains. We have found that the lowest energy gap, the correlat… ▽ More We have investigated the electronic structure of the zigzag ladder (chain) compound SrCuO2 combining polarized optical absorption, reflection, photoreflectance and pseudo-dielectric function measurements with the model calculations. These measurements yield an energy gap of 1.42 eV (1.77 eV) at 300 K along (perpendicular) to the Cu-O chains. We have found that the lowest energy gap, the correlation gap, is temperature independent. The electronic structure of this oxide is calculated using both the local-spin-density-approximation with gradient correction method, and the tight-binding theory for the correlated electrons. The calculated density of electronic states for non-correlated and correlated electrons shows quasi-one-dimensional character. The correlation gap values of 1.42 eV (indirect transition) and 1.88 eV (direct transition) have been calculated with the electron hop** parameters t = 0.30 eV (along a chain), t_yz = 0.12 eV (between chains) and the Anderson-Hubbard repulsion on copper sites U= 2.0 eV. We concluded that SrCuO_2 belongs to the correlated-gap insulators. △ Less

Submitted 19 January, 2001; originally announced January 2001.

Comments: 24 pages, 8 figures, to be published in Phys.Rev.B

Journal ref: Phys. Rev. B 63, 165105 (2001)

Magnetic Field-Induced Fano Profiles in the Absorption Coefficient of Semiconductors

Authors: V. I. Belitsky, A. Cantarero, S. T. Pavlov

Abstract: A strongly asymmetric, Fano-like resonance profile has been found for magneto-absorption in the states of hot free electron-hole pairs scattered by defects in bulk semiconductors. The renormalization of the absorption profile, compared to that expected from the bare density of states in a high magnetic field, follows from a quasi-one-dimensional character of electronic excitations. The results a… ▽ More A strongly asymmetric, Fano-like resonance profile has been found for magneto-absorption in the states of hot free electron-hole pairs scattered by defects in bulk semiconductors. The renormalization of the absorption profile, compared to that expected from the bare density of states in a high magnetic field, follows from a quasi-one-dimensional character of electronic excitations. The results are valid for absorption by the electronic states of large Landau quantum number where the Coulomb interaction should play a minor role. The resonance shape is in a good qualitattive agreement with experimental observations. △ Less

Submitted 20 March, 1996; originally announced March 1996.

Magnetic-field-enhanced outgoing excitonic resonance in multi-phonon Raman scattering from polar semiconductors

Authors: I. G. Lang, A. V. Prokhorov, M. Cardona, V. I. Belitsky, A. Cantarero, S. T. Pavlov

Abstract: A combined scattering mechanism involving the states of free electron-hole pairs (exciton continuum) and discrete excitons as intermediate states in the multi-phonon Raman scattering leads to (1) a strong increase of the scattering efficiency in the presence of a high magnetic field and to (2) an outgoing excitonic resonance: the two features are not compatible when only free pairs (leading to a… ▽ More A combined scattering mechanism involving the states of free electron-hole pairs (exciton continuum) and discrete excitons as intermediate states in the multi-phonon Raman scattering leads to (1) a strong increase of the scattering efficiency in the presence of a high magnetic field and to (2) an outgoing excitonic resonance: the two features are not compatible when only free pairs (leading to a strong increase of the scattering efficiency under the applied magnetic field) or discrete excitons (resulting in the outgoing resonance at the excitonic gap) are taken into account. △ Less

Submitted 21 February, 1996; originally announced February 1996.

Comments: 6 pages, 2 eps-figures