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Precision frequency tuning of tunable transmon qubits using alternating-bias assisted annealing
Authors:
Xiqiao Wang,
Joel Howard,
Eyob A. Sete,
Greg Stiehl,
Cameron Kopas,
Stefano Poletto,
Xian Wu,
Mark Field,
Nicholas Sharac,
Christopher Eckberg,
Hilal Cansizoglu,
Raja Katta,
Josh Mutus,
Andrew Bestwick,
Kameshwar Yadavalli,
David P. Pappas
Abstract:
Superconducting quantum processors are one of the leading platforms for realizing scalable fault-tolerant quantum computation (FTQC). The recent demonstration of post-fabrication tuning of Josephson junctions using alternating-bias assisted annealing (ABAA) technique and a reduction in junction loss after ABAA illuminates a promising path towards precision tuning of qubit frequency while maintaini…
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Superconducting quantum processors are one of the leading platforms for realizing scalable fault-tolerant quantum computation (FTQC). The recent demonstration of post-fabrication tuning of Josephson junctions using alternating-bias assisted annealing (ABAA) technique and a reduction in junction loss after ABAA illuminates a promising path towards precision tuning of qubit frequency while maintaining high coherence. Here, we demonstrate precision tuning of the maximum $|0\rangle\rightarrow |1\rangle$ transition frequency ($f_{01}^{\rm max}$) of tunable transmon qubits by performing ABAA at room temperature using commercially available test equipment. We characterize the impact of junction relaxation and aging on resistance spread after tuning, and demonstrate a frequency equivalent tuning precision of 7.7 MHz ($0.17\%$) based on targeted resistance tuning on hundreds of qubits, with a resistance tuning range up to $18.5\%$. Cryogenic measurements on tuned and untuned qubits show evidence of improved coherence after ABAA with no significant impact on tunability. Despite a small global offset, we show an empirical $f_{01}^{\rm max}$ tuning precision of 18.4 MHz by tuning a set of multi-qubit processors targeting their designed Hamiltonians. We experimentally characterize high-fidelity parametric resonance iSWAP gates on two ABAA-tuned 9-qubit processors with fidelity as high as $99.51\pm 0.20\%$. On the best-performing device, we measured across the device a median fidelity of $99.22\%$ and an average fidelity of $99.13\pm 0.12 \%$. Yield modeling analysis predicts high detuning-edge-yield using ABAA beyond the 1000-qubit scale. These results demonstrate the cutting-edge capability of frequency targeting using ABAA and open up a new avenue to systematically improving Hamiltonian targeting and optimization for scaling high-performance superconducting quantum processors.
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Submitted 8 July, 2024;
originally announced July 2024.
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Transport signatures of phase fluctuations in superconducting qubits
Authors:
Maxwell Wisne,
Yanpei Deng,
Hilal Cansizoglu,
Cameron Kopas,
Josh Mutus,
Venkat Chandrasekhar
Abstract:
Josephson junctions supply the nonlinear inductance element in superconducting qubits. In the widely used transmon configuration, where the junction is shunted by a large capacitor, the low charging energy minimizes the sensitivity of the qubit to charge noise while maintaining the necessary anharmonicity to qubit states. We report here low-frequency transport measurements on small standalone junc…
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Josephson junctions supply the nonlinear inductance element in superconducting qubits. In the widely used transmon configuration, where the junction is shunted by a large capacitor, the low charging energy minimizes the sensitivity of the qubit to charge noise while maintaining the necessary anharmonicity to qubit states. We report here low-frequency transport measurements on small standalone junctions and identically fabricated capacitively-shunted junctions that show two distinct features normally attributed to small capacitance junctions near zero bias: reduced switching currents and prominent finite resistance associated with phase diffusion in the current-voltage characteristic. Our transport data reveals the existence of phase fluctuations in transmons arising from intrinsic junction capacitance.
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Submitted 29 May, 2024;
originally announced May 2024.
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Systematic Improvements in Transmon Qubit Coherence Enabled by Niobium Surface Encapsulation
Authors:
Mustafa Bal,
Akshay A. Murthy,
Shaojiang Zhu,
Francesco Crisa,
Xinyuan You,
Ziwen Huang,
Tanay Roy,
Jaeyel Lee,
David van Zanten,
Roman Pilipenko,
Ivan Nekrashevich,
Andrei Lunin,
Daniel Bafia,
Yulia Krasnikova,
Cameron J. Kopas,
Ella O. Lachman,
Duncan Miller,
Josh Y. Mutus,
Matthew J. Reagor,
Hilal Cansizoglu,
Jayss Marshall,
David P. Pappas,
Kim Vu,
Kameshwar Yadavalli,
**-Su Oh
, et al. (15 additional authors not shown)
Abstract:
We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigati…
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We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different cap** materials, such as tantalum, aluminum, titanium nitride, and gold, and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T$_1$ relaxation times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When cap** niobium with tantalum, we obtain median qubit lifetimes above 300 microseconds, with maximum values up to 600 microseconds, that represent the highest lifetimes to date for superconducting qubits prepared on both sapphire and silicon. Our comparative structural and chemical analysis suggests why amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.
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Submitted 24 January, 2024; v1 submitted 25 April, 2023;
originally announced April 2023.
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Visualizing heterogeneous dipole fields by terahertz light coupling in individual nano-junctions used in transmon qubits
Authors:
R. H. J. Kim,
J. M. Park,
S. Haeuser,
C. Huang,
D. Cheng,
T. Koschny,
J. Oh,
C. Kopas,
H. Cansizoglu,
K. Yadavalli,
J. Mutus,
L. Zhou,
L. Luo,
M. Kramer,
J. Wang
Abstract:
The fundamental challenge underlying superconducting quantum computing is to characterize heterogeneity and disorder in the underlying quantum circuits. These nonuniform distributions often lead to local electric field concentration, charge scattering, dissipation and ultimately decoherence. It is particularly challenging to probe deep sub-wavelength electric field distribution under electromagnet…
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The fundamental challenge underlying superconducting quantum computing is to characterize heterogeneity and disorder in the underlying quantum circuits. These nonuniform distributions often lead to local electric field concentration, charge scattering, dissipation and ultimately decoherence. It is particularly challenging to probe deep sub-wavelength electric field distribution under electromagnetic wave coupling at individual nano-junctions and correlate them with structural imperfections from interface and boundary, ubiquitous in Josephson junctions (JJ) used in transmon qubits. A major obstacle lies in the fact that conventional microscopy tools are incapable of measuring simultaneous at nanometer and terahertz, "nano-THz" scales, which often associate with frequency-dependent charge scattering in nano-junctions. Here we directly visualize interface nano-dipole near-field distribution of individual Al/AlO$_{x}$/Al junctions used in transmon qubits. Our THz nanoscope images show a remarkable asymmetry across the junction in electromagnetic wave-junction coupling response that manifests as "hot" vs "cold" cusp spatial electrical field structures and correlates with defected boundaries from the multi-angle deposition processes in JJ fabrication inside qubit devices. The asymmetric nano-dipole electric field contrast also correlates with distinguishing, "overshoot" frequency dependence that characterizes the charge scattering and dissipation at nanoscale, hidden in responses from topographic, structural imaging and spatially-averaged techniques. The real space map** of junction dipole fields and THz charge scattering can be extended to guide qubit nano-fabrication for ultimately optimizing qubit coherence times.
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Submitted 13 July, 2022;
originally announced July 2022.
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Multi-modal electron microscopy study on decoherence sources and their stability in Nb based superconducting qubit
Authors:
**-Su Oh,
Xiaotian Fang,
Tae-Hoon Kim,
Matt Lynn,
Matt Kramer,
Mehdi Zarea,
James A. Sauls,
A. Romanenko,
S. Posen,
A. Grassellino,
Cameron J. Kopas,
Mark Field,
Jayss Marshall,
Hilal Cansizoglu,
Joshua Y. Mutus,
Matthew Reagor,
Lin Zhou
Abstract:
Niobium is commonly used for superconducting quantum systems as readout resonators, capacitors, and interconnects. The coherence time of the superconducting qubits is mainly limited by microwave dissipation attributed to two-level system defects at interfaces, such as the Nb/Si and Nb/air interface. One way to improve the Nb/air interface quality is by thermal annealing, as shown by extensive stud…
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Niobium is commonly used for superconducting quantum systems as readout resonators, capacitors, and interconnects. The coherence time of the superconducting qubits is mainly limited by microwave dissipation attributed to two-level system defects at interfaces, such as the Nb/Si and Nb/air interface. One way to improve the Nb/air interface quality is by thermal annealing, as shown by extensive studies in 3D superconducting radio frequency (SRF) cavities. However, it is unclear how the microstructure and chemistry of the interface structures change during heat treatment. To address this knowledge gap, we comprehensively characterized Nb films deposited on Si wafers by physical vapor deposition, including (1) an Nb film from a transmon and (2) an Nb film without any patterning step, using an aberration-corrected transmission electron microscope. Both Nb films exhibit columnar growth with strong [110] textures. There is a double layer between the Nb film and Si substrate, which are amorphous niobium silicides with different Nb and Si concentrations. After in-situ heating of the heterostructure at 360°C inside the microscope, the composition of the double layers at the Nb-Si interface remains almost the same despite different thickness changes. The initial amorphous niobium oxide layer on Nb surface decomposes into face-centered cubic Nb nanograins in the amorphous Nb-O matrix upon heating.
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Submitted 12 April, 2022;
originally announced April 2022.
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Avalanche Photodetectors with Photon Trap** Structures for Biomedical Imaging Applications
Authors:
Cesar Bartolo-Perez,
Soroush Ghandiparsi,
Ahmed S. Mayet,
Hilal Cansizoglu,
Yang Gao,
Wayesh Qarony,
Ahasan Ahamed,
Shih-Yuan Wang,
Simon R. Cherry,
M. Saif Islam,
Gerard Arino-Estrada
Abstract:
Enhancing photon detection efficiency and time resolution in photodetectors in the entire visible range is critical to improve the image quality of time-of-flight (TOF)-based imaging systems and fluorescence lifetime imaging (FLIM). In this work, we evaluate the gain, detection efficiency, and timing performance of avalanche photodiodes (APD) with photon trap** nanostructures for photons with 45…
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Enhancing photon detection efficiency and time resolution in photodetectors in the entire visible range is critical to improve the image quality of time-of-flight (TOF)-based imaging systems and fluorescence lifetime imaging (FLIM). In this work, we evaluate the gain, detection efficiency, and timing performance of avalanche photodiodes (APD) with photon trap** nanostructures for photons with 450 and 850 nm wavelengths. At 850 nm wavelength, our photon trap** avalanche photodiodes showed 30 times higher gain, an increase from 16% to >60% enhanced absorption efficiency, and a 50% reduction in the full width at half maximum (FWHM) pulse response time close to the breakdown voltage. At 450 nm wavelength, the external quantum efficiency increased from 54% to 82%, while the gain was enhanced more than 20-fold. Therefore, silicon APDs with photon trap** structures exhibited a dramatic increase in absorption compared to control devices. Results suggest very thin devices with fast timing properties and high absorption between the near-ultraviolet and the near infrared region can be manufactured for high-speed applications in biomedical imaging. This study paves the way towards obtaining single photon detectors with photon trap** structures with gains above 10^6 for the entire visible range
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Submitted 27 April, 2021;
originally announced April 2021.
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Maximizing absorption in photon trap** ultra-fast silicon photodetectors
Authors:
Cesar Bartolo-Perez,
Wayesh Qarony,
Soroush Ghandiparsi,
Ahmed S. Mayet,
Ahasan Ahamed,
Hilal Cansizoglu,
Yang Gao,
Ekaterina Ponizovskaya Devine,
Toshishige Yamada,
Aly F Elrefaie,
Shih-Yuan Wang,
M. Saif Islam
Abstract:
Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Ranging Systems (LIDAR), quantum communications, and medical imaging. However, such photodetectors present a bandwidth-absorption trade-off at those wavelengths that have limited their implementation. Photon trap** structu…
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Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Ranging Systems (LIDAR), quantum communications, and medical imaging. However, such photodetectors present a bandwidth-absorption trade-off at those wavelengths that have limited their implementation. Photon trap** structures address this trade-off by enhancing the light-matter interactions, but maximizing their performance remains a challenge due to a multitude of factors influencing their design and fabrication. In this paper, strategies to improve the photon trap** effect while enhancing the speed of operation are investigated. By optimizing the design of photon trap** structures and experimentally integrated them in high-speed photodetectors, a simultaneous broadband absorption efficiency enhancement up to 1000% and a capacitance reduction of more than 50% has been achieved. Such work also allows to present empirical equations to correlate the quantum efficiency of photodetectors with the physical properties of the photon-trap** structures, material characteristics, and limitations of the fabrication technologies. The results obtained, open routes towards designing cost-effective CMOS integrated.
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Submitted 22 December, 2020;
originally announced December 2020.
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Quantum efficiency enhancement of mid infrared photodetectors with photon trap** micro-structures
Authors:
Ekaterina Ponizovskaya Devine,
Hilal Cansizoglu,
Yang Gao,
Soroush Ghandiparsi,
Cesar Perez,
Hasina H. Mamtaz,
1 H. Rabiee,
M. Saif Islam
Abstract:
The study proposes to use the photon trap** micro-structures to enhance quantum efficiency of the mid infrared photodetectors. The nanostructure that is consist of micro holes reduces reflection and bends the near normally incident light into the lateral modes in the absorbing layer.
The study proposes to use the photon trap** micro-structures to enhance quantum efficiency of the mid infrared photodetectors. The nanostructure that is consist of micro holes reduces reflection and bends the near normally incident light into the lateral modes in the absorbing layer.
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Submitted 29 August, 2018;
originally announced October 2018.
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Optimization of light trap** micro-hole structure for high-speed high-efficiency silicon photodiodes
Authors:
Ekaterina Ponizovskaya Devine,
Hilal Cansizoglu,
Yang Gao,
S. Ghandiparsi,
Ahmet Kaya,
Hasina H. Mamtaz,
Ahmed S. Mayet,
Toshishige Yamada,
Aly F. Elrefaie,
Shih-Yuan Wang,
M. Saif Islam
Abstract:
We optimized micro-holes in a thin slab for fast Si photodetectors at wavelength 800-950nm. Lateral modes are shown to be responsible for the effective light trap**. Small disorder and cone hole shapes helped achieve uniform quantum efficiency in a wide wavelength range.
We optimized micro-holes in a thin slab for fast Si photodetectors at wavelength 800-950nm. Lateral modes are shown to be responsible for the effective light trap**. Small disorder and cone hole shapes helped achieve uniform quantum efficiency in a wide wavelength range.
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Submitted 29 August, 2018;
originally announced October 2018.
