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Engineering a Spin-Orbit Bandgap in Graphene-Tellurium Heterostructures
Authors:
B. Muñiz Cano,
D. Pacilè,
M. G. Cuxart,
A. Amiri,
F. Calleja,
M. Pisarra,
A. Sindona,
F. Martín,
E. Salagre,
P. Segovia,
E. G. Michel,
A. L. Vázquez de Parga,
R. Miranda,
J. Camarero,
M. Garnica,
M. A. Valbuena
Abstract:
Intensive research has focused on harnessing the potential of graphene for electronic, optoelectronic, and spintronic devices by generating a bandgap at the Dirac point and enhancing the spin-orbit interaction in the graphene layer. Proximity to heavy p elements is a promising approach; however, their interaction in graphene heterostructures has not been as intensively studied as that of ferromagn…
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Intensive research has focused on harnessing the potential of graphene for electronic, optoelectronic, and spintronic devices by generating a bandgap at the Dirac point and enhancing the spin-orbit interaction in the graphene layer. Proximity to heavy p elements is a promising approach; however, their interaction in graphene heterostructures has not been as intensively studied as that of ferromagnetic, noble, or heavy d metals, neither as interlayers nor as substrates. In this study, the effective intercalation of Te atoms in a graphene on Ir(111) heterostructure is achieved. Combining techniques such as low energy electron diffraction and scanning tunneling microscopy, the structural evolution of the system as a function of the Te coverage is elucidated, uncovering up to two distinct phases. The presented angle-resolved photoemission spectroscopy analysis reveals the emergence of a bandgap of about 240 meV in the Dirac cone at room temperature, which preserves its characteristic linear dispersion. Furthermore, a pronounced n-do** effect induced by Te in the heterostructure is also observed, and remarkably the possibility of tuning the Dirac point energy towards the Fermi level by reducing the Te coverage while maintaining the open bandgap is demonstrated. Spin-resolved measurements unveil a non-planar chiral spin texture with significant splitting values for both in-plane and out-of-plane spin components. These experimental findings are consistent with the development of a quantum spin Hall phase, where a Te-enhanced intrinsic spin orbit coupling in graphene surpasses the Rashba one and promotes the opening of the spin-orbit bandgap.
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Submitted 28 November, 2023;
originally announced November 2023.
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Experimental demonstration of a magnetically induced war** transition in a topological insulator mediated by rare-earth surface dopants
Authors:
Beatriz Muñiz Cano,
Yago Ferreiros,
Pierre A. Pantaleón,
Ji Dai,
Massimo Tallarida,
Adriana I. Figueroa,
Vera Marinova,
Kevin García Díez,
Aitor Mugarza,
Sergio O. Valenzuela,
Rodolfo Miranda,
Julio Camarero,
Francisco Guinea,
Jose Angel Silva-Guillén,
Miguel A. Valbuena
Abstract:
Magnetic topological insulators (MTI) constitute a novel class of materials where the topologically protected band structure coexists with long-range ferromagnetic order, which can lead to the breaking of time-reversal symmetry (TRS), introducing a bandgap in the Dirac cone-shaped topological surface state (TSS). The gap opening in MITs has been predicted to be accompanied by a distortion in the T…
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Magnetic topological insulators (MTI) constitute a novel class of materials where the topologically protected band structure coexists with long-range ferromagnetic order, which can lead to the breaking of time-reversal symmetry (TRS), introducing a bandgap in the Dirac cone-shaped topological surface state (TSS). The gap opening in MITs has been predicted to be accompanied by a distortion in the TSS, evolving its warped shape from hexagonal to trigonal. In this work, we demonstrate such a transition by means of angle-resolved photoemission spectroscopy after the deposition of low concentrations of magnetic rare earths, namely Er and Dy, on the ternary three-dimensional prototypical topological insulator Bi$_2$Se$_2$Te. Signatures of the gap opening occurring as a consequence of the TRS breaking have also been observed, whose existence is supported by the observation of the aforementioned transition. Moreover, increasing the Er coverage results in a tunable p-type do** of the TSS. As a consequence, the Fermi level (E$_{\textrm{F}}$) of our Bi$_2$Se$_2$Te crystals can be gradually tuned towards the TSS Dirac point, and therefore to the magnetically induced bandgap; thus fulfilling two of the necessary prerequisites for the realization of the quantum anomalous Hall effect (QAHE) in this system. The experimental results are rationalized by a theoretical model where a magnetic Zeeman out-of-plane term is introduced in the hamiltonian governing the TSS band dispersion. Our results offer new strategies to control magnetic interactions with TSSs based on a simple approach and open up viable routes for the realization of the QAHE.
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Submitted 3 February, 2023;
originally announced February 2023.
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Rashba-like spin textures in Graphene promoted by ferromagnet-mediated Electronic-Hybridization with heavy metal
Authors:
Beatriz Muñiz Cano,
Adrían Gudín,
Jaime Sánchez-Barriga,
Oliver J. Clark,
Alberto Anadón,
Jose Manuel Díez,
Pablo Olleros-Rodríguez,
Fernando Ajejas,
Iciar Arnay,
Matteo Jugovac,
Julien Rault,
Patrick Le Févre,
François Bertran,
Donya Mazhjoo,
Gustav Bihlmayer,
Stefan Blügel,
Rodolfo Miranda,
Julio Camarero,
Miguel Angel Valbuena,
Paolo Perna
Abstract:
Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this g…
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Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this goal requires the fundamental understanding of the microscopic origin of their unusual properties. Here, we elucidate the nature of the induced spin-orbit coupling (SOC) at Gr/Co interfaces on Ir. Through spin- and angle-resolved photoemission along with density functional theory, we show that the interaction of the HM with the C atomic layer via hybridization with the FM is the source of strong SOC in the Gr layer. Furthermore, our studies on ultrathin Co films underneath Gr reveal an energy splitting of $\sim$\,100 meV (negligible) for in-plane (out-of-plane) spin polarized Gr $π$ bands, consistent with a Rashba-SOC at the Gr/Co interface, which is either the fingerprint or the origin of the DMI. This mechanism vanishes at large Co thicknesses, where neither in-plane nor out-of-plane spin-orbit splitting is observed, indicating that Gr $π$ states are electronically decoupled from the HM. The present findings are important for future applications of Gr-based heterostructures in spintronic devices.
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Submitted 1 May, 2023; v1 submitted 9 June, 2022;
originally announced June 2022.
