On the experimental properties of the TS defect in 4H-SiC
Authors:
Johannes A. F. Lehmeyer,
Alexander D. Fuchs,
Zhengming Li,
Titus Bornträger,
Fabio Candolfi,
Maximilian Schober,
Marcus Fischer,
Martin Hartmann,
Elke Neu,
Michel Bockstedte,
Michael Krieger,
Heiko B. Weber
Abstract:
When annealing a 4H silicon carbide (SiC) crystal, a sequence of optically active defect centers occurs among which the TS center is a prominent example. Here, we present low-temperature photoluminescence analyses on the single defect level. They reveal that the three occurring spectral signatures TS1, TS2 and TS3 originate from one single defect. Their polarization dependences expose three differ…
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When annealing a 4H silicon carbide (SiC) crystal, a sequence of optically active defect centers occurs among which the TS center is a prominent example. Here, we present low-temperature photoluminescence analyses on the single defect level. They reveal that the three occurring spectral signatures TS1, TS2 and TS3 originate from one single defect. Their polarization dependences expose three different crystallographic orientations in the basal plane, which relate to the projections of the nearest neighbor directions. Accordingly, we find a three-fold level-splitting in ensemble studies, when applying mechanical strain. This dependency is quantitatively calibrated. A complementary electrical measurement, deep level transient spectroscopy, reveals a charge transition level of the TS defect at 0.6 eV above the valence band. For a future identification, this accurate characterization of its optical and electronic properties along with their response to mechanical strain is a milestone.
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Submitted 15 April, 2024;
originally announced April 2024.
