Showing 1–10 of 10 results for author: Campbell, P M

Spintronic Quantum Phase Transition in a $Graphene/Pb_{0.24}Sn_{0.76}Te$ Heterostructure with Giant Rashba Spin-Orbit Coupling

Authors: Jennifer E. DeMell, Ivan Naumov, Gregory M. Stephen, Nicholas A. Blumenschein, Y. -J. Leo Sun, Adrian Fedorko, Jeremy T. Robinson, Paul M. Campbell, Patrick J. Taylor, Don Heiman, Pratibha Dev, Aubrey T. Hanbicki, Adam L. Friedman

Abstract: Mechanical stacking of two dissimilar materials often has surprising consequences for heterostructure behavior. In particular, a two-dimensional electron gas (2DEG) is formed in the heterostructure of the topological crystalline insulator Pb0.24Sn0.76Te and graphene due to contact of a polar with a nonpolar surface and the resulting changes in electronic structure needed to avoid polar catastrophe… ▽ More Mechanical stacking of two dissimilar materials often has surprising consequences for heterostructure behavior. In particular, a two-dimensional electron gas (2DEG) is formed in the heterostructure of the topological crystalline insulator Pb0.24Sn0.76Te and graphene due to contact of a polar with a nonpolar surface and the resulting changes in electronic structure needed to avoid polar catastrophe. We study the spintronic properties of this heterostructure with non-local spin valve devices. We observe spin-momentum locking at lower temperatures that transitions to regular spin channel transport only at ~40 K. Hanle spin precession measurements show a spin relaxation time as high as 2.18 ns. Density functional theory calculations confirm that the spin-momentum locking is due to a giant Rashba effect in the material and that the phase transition is a Lifshitz transition. The theoretically predicted Lifshitz transition is further evident in the phase transition-like behavior in the Landé g-factor and spin relaxation time. △ Less

Submitted 24 July, 2023; originally announced July 2023.

Comments: 33 pages, 17 figures, supplemental information included

Journal ref: Adv. Funct. Mat., 2311875 (2023)

Magnetotransport in graphene/Pb0.24Sn0.76Te heterostructures: finding a way to avoid catastrophe

Authors: Gregory M. Stephen, Ivan Naumov, Nicholas A. Blumenschein, Yi-Jan Leo Sun, Jennifer E. DeMell, Sharmila Shirodkar, Pratibha Dev, Patrick J. Taylor, Jeremy T. Robinson, Paul M. Campbell, Aubrey T. Hanbicki, Adam L. Friedman

Abstract: While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging material classes, two-dimensional materials and topological materials, are particularly promising because of the wide range of possible permutations that are easily accessible. Individually, both graphene and Pb0.24Sn0.7… ▽ More While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging material classes, two-dimensional materials and topological materials, are particularly promising because of the wide range of possible permutations that are easily accessible. Individually, both graphene and Pb0.24Sn0.76Te (PST) are widely investigated for spintronic applications because graphene's high carrier mobility and PST's topologically protected surface states are attractive platforms for spin transport. Here, we combine monolayer graphene with PST and demonstrate a hybrid system with properties enhanced relative to the constituent parts. Using magnetotransport measurements, we find carrier mobilities up to 20,000 cm2/Vs and a magnetoresistance approaching 100 percent, greater than either material prior to stacking. We also establish that there are two distinct transport channels and determine a lower bound on the spin relaxation time of 4.5 ps. The results can be explained using the polar catastrophe model, whereby a high mobility interface state results from a reconfiguration of charge due to a polar/non-polar interface interaction. Our results suggest that proximity induced interface states with hybrid properties can be added to the still growing list of remarkable behaviors in these novel materials. △ Less

Submitted 17 October, 2022; v1 submitted 27 July, 2022; originally announced July 2022.

Nonlinear Raman Shift Induced by Exciton-to-Trion Transformation in Suspended Trilayer MoS2

Authors: Hossein Taghinejad, Mohammad Taghinejad, Alexey Tarasov, Meng-Yen Tsai, Amir H. Hosseinnia, Philip M. Campbell, Ali A. Eftekhar, Eric M. Vogel, Ali Adibi

Abstract: Layered two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have recently attracted remarkable attention because of their unique physical properties. Here, we use photoluminescence (PL) and Raman spectroscopy to study the formation of the so- called trions in a synthesized freestanding trilayer MoS2. A trion is a charged quasi-particle formed by adding one electron or hole to a… ▽ More Layered two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have recently attracted remarkable attention because of their unique physical properties. Here, we use photoluminescence (PL) and Raman spectroscopy to study the formation of the so- called trions in a synthesized freestanding trilayer MoS2. A trion is a charged quasi-particle formed by adding one electron or hole to a neutral exciton (a bound electron-hole pair). We demonstrate accurate control over the transformation of excitons to trions by tuning the power of the optical pump (laser). Increasing the power of the excitation laser beyond a certain threshold (~ 4 mW) allows modulation of trion-to-exciton PL intensity ratio as well as the spectral linewidth of both trions and excitons. Via a systematic and complementary Raman analysis we disclose a strong coupling between laser induced exciton-to-trion transformation and the characteristic phononic vibrations of MoS2. The onset of such an optical transformation corresponds to the onset of a previously unknown nonlinear Raman shift of the in-plane (E12g) and out-of-plane (A1g) vibrational modes. This coupling directly affects the well-known linear red-shift of the A1g and E12g vibrations due to heating at low laser powers, and changes it to a nonlinear and non-monotonic dependence with a blue-shift in the high laser power regime. Local reduction of the electron density upon exciton-to-trion transformation is found to be the underlying mechanism for the blue-shift at high laser powers. Our findings enrich our knowledge about the strong coupling of photonic and phononic properties in 2D semiconductors, and enable reliable interpretation of PL and Raman spectra in the high laser power regimes. △ Less

Submitted 2 February, 2015; originally announced February 2015.

Comments: 19 pages, 4 figures

Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC

Authors: Joseph L. Tedesco, Glenn G. Jernigan, James C. Culbertson, Jennifer K. Hite, Yang Yang, Kevin M. Daniels, Rachael L. Myers-Ward, Charles R. Eddy, Jr., Joshua A. Robinson, Kathleen A. Trumbull, Maxwell T. Wetherington, Paul M. Campbell, D. Kurt Gaskill

Abstract: Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of th… ▽ More Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene. △ Less

Submitted 28 July, 2010; originally announced July 2010.

Comments: 12 pages, 4 figures

Journal ref: Appl. Phys. Lett. 96, 222103 (2010)

Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

Authors: Joshua D. Caldwell, Travis J. Anderson, James C. Culbertson, Glenn G. Jernigan, Karl D. Hobart, Fritz J. Kub, Marko J. Tadjer, Joseph L. Tedesco, Jennifer K. Hite, Michael A. Mastro, Rachael L. Myers-Ward, Charles R. Eddy Jr., Paul M. Campbell, D. Kurt Gaskill

Abstract: In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This pr… ▽ More In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This process enables EG films to be used in flexible electronic devices or as optically transparent contacts. △ Less

Submitted 14 October, 2009; originally announced October 2009.

Comments: 8 pages, 4 figures and supplementary info regarding procedure for transfer

Journal ref: ACS Nano 4(2), 1108-1114 (2010)

Epitaxial Graphene Growth on SiC Wafers

Authors: D. Kurt Gaskill, Glenn G. Jernigan, Paul M. Campbell, Joseph L. Tedesco, James C. Culbertson, Brenda L. VanMil, Rachael L. Myers-Ward, Charles R. Eddy, Jr., Jeong Moon, D. Curtis, M. Hu, D. Wong, C. McGuire, Joshua A. Robinson, Mark A. Fanton, Joseph P. Stitt, Thomas Stitt, David Snyder, Xiaojun Weng, Eric Frantz

Abstract: An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm Si… ▽ More An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm SiC wafers that were subsequently fabricated into field effect transistors with fmax of 14 GHz. △ Less

Submitted 29 July, 2009; originally announced July 2009.

Comments: 215th Meeting of the Electrochemical Society, 8 pages, 8 figures

Journal ref: ECS Trans. 19, 117 (2009)

Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide

Authors: Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward, James C. Culbertson, Glenn G. Jernigan, Paul M. Campbell, Joseph M. McCrate, Stephen A. Kitt, Charles R. Eddy, Jr., D. Kurt Gaskill

Abstract: Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and it was found that growth under argon led to improved morphologies on the C-face films but the Si-face films were not significantly affected. Free c… ▽ More Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and it was found that growth under argon led to improved morphologies on the C-face films but the Si-face films were not significantly affected. Free carrier transport studies were conducted through Hall effect measurements, and carrier mobilities were found to increase and sheet carrier densities were found to decrease for those films grown under argon as compared to high vacuum conditions. The improved mobilities and concurrent decreases in sheet carrier densities suggest a decrease in scattering in the films grown under argon. △ Less

Submitted 29 July, 2009; originally announced July 2009.

Comments: 215th Meeting of the Electrochemical Society (ECS 215), 14 pages, 6 figures

Journal ref: ECS Trans. 19, 137 (2009)

Graphene formation on SiC substrates

Authors: Brenda L. VanMil, Rachael L. Myers-Ward, Joseph L. Tedesco, Charles R. Eddy, Jr., Glenn G. Jernigan, James C. Culbertson, Paul M. Campbell, Joseph M. McCrate, Stephen A. Kitt, D. Kurt Gaskill

Abstract: Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2 etching the on-axis sub-strates was developed to produce surface steps with heights of 0.5 nm on the Si-face and 1.0 to 1.5 nm on the C-face for each polytype. A… ▽ More Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2 etching the on-axis sub-strates was developed to produce surface steps with heights of 0.5 nm on the Si-face and 1.0 to 1.5 nm on the C-face for each polytype. A process was developed to form graphene on the substrates immediately after H2 etching and Raman spectroscopy of these samples confirmed the formation of graphene. The morphology of the graphene is described. For both faces, the underlying substrate morphology was significantly modified during graphene formation; sur-face steps were up to 15 nm high and the uniform step morphology was sometimes lost. Mo-bilities and sheet carrier concentrations derived from Hall Effect measurements on large area (16 mm square) and small area (2 and 10 um square) samples are presented and shown to compare favorably to recent reports. △ Less

Submitted 28 July, 2009; originally announced July 2009.

Comments: European Conference on Silicon Carbide and Related Materials 2008 (ECSCRM '08), 4 pages, 4 figures

Journal ref: Mater. Sci. Forum 615-617, 211 (2009)

Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide

Authors: Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward, Joseph M. McCrate, Stephen A. Kitt, Paul M. Campbell, Glenn G. Jernigan, James C. Culbertson, Charles R. Eddy, Jr., D. Kurt Gaskill

Abstract: Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the growth face. About 40% of the samples exhibited holes as the dominant carrier, independent of face. Generally, mobilities increased with decreasing carr… ▽ More Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the growth face. About 40% of the samples exhibited holes as the dominant carrier, independent of face. Generally, mobilities increased with decreasing carrier density, independent of carrier type and substrate polytype. The contributions of scattering mechanisms to the conductivities of the films are discussed. The results suggest that for near-intrinsic carrier densities at 300 K epitaxial graphene mobilities will be ~150,000 cm2V-1s-1 on the (000-1) face and ~5,800 cm2V-1s-1 on the (0001) face. △ Less

Submitted 29 July, 2009; originally announced July 2009.

Comments: Accepted for publication in Applied Physics Letters, 10 pages, 2 figures

Journal ref: Appl. Phys. Lett 95, 122102 (2009)

Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

Authors: Joshua A. Robinson, Maxwell Wetherington, Joseph L. Tedesco, Paul M. Campbell, Xiaojun Weng, Joseph Stitt, Mark A. Fanton, Eric Frantz, David Snyder, Brenda L. VanMil, Glenn G. Jernigan, Rachael L. Myers-Ward, Charles R. Eddy, Jr., D. Kurt Gaskill

Abstract: We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on thickness uniformity but also on monolayer strain uniformity. Only when both thickness and strain are uniform over a significant fraction (> 40%) of the devic… ▽ More We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on thickness uniformity but also on monolayer strain uniformity. Only when both thickness and strain are uniform over a significant fraction (> 40%) of the device active area does the mobility exceed 1000 cm2/V-s. Additionally, we achieve high mobility epitaxial graphene (18,100 cm2/V-s at room temperature) on the C-face of SiC [SiC(000-1)] and show that carrier mobility depends strongly on the graphene layer stacking. These findings provide a means to rapidly estimate carrier mobility and provide a guide to achieve very high mobility in epitaxial graphene. Our results suggest that ultra-high mobilities (>50,000 cm2/V-s) are achievable via the controlled formation of uniform, rotationally faulted epitaxial graphene. △ Less

Submitted 27 February, 2009; originally announced February 2009.

Comments: 13 pages including supplimental material. Submitted to Nature Materials 2/23/2009