Showing 1–9 of 9 results for author: Cambril, E

Mode-locked GaN waveguide polariton laser

Authors: H. Souissi, M. Gromovyi, I. Septembre, V. Develay, C. Brimont, L. Doyennette, E. Cambril, S. Bouchoule, B. Alloing, E. Frayssinet, J. Zúñiga-Pérez, T. Ackemann, G. Malpuech, D. D Solnyshkov, T. Guillet

Abstract: We introduce a novel mode-locking scheme based on polariton-polariton interactions and we demonstrate its operation in a $60 \ μm-$long GaN-based waveguide cavity. The exciton-polariton active layer acts both as a gain medium and as a self-focusing medium with a large Kerr-like nonlinearity. The monitoring of the cavity free spectral range across the lasing threshold evidences the linearization of… ▽ More We introduce a novel mode-locking scheme based on polariton-polariton interactions and we demonstrate its operation in a $60 \ μm-$long GaN-based waveguide cavity. The exciton-polariton active layer acts both as a gain medium and as a self-focusing medium with a large Kerr-like nonlinearity. The monitoring of the cavity free spectral range across the lasing threshold evidences the linearization of the strongly nonlinear mode dispersion due to self-phase modulation. The Gross-Pitaevskii equation for the coupled exciton and photon fields taking into account the exact cavity geometry, predicts the appearance of optical pulses within the cavity that correspond to optical solitons. Pulses widths are about 100 fs, both in theory and experiment. △ Less

Submitted 2 November, 2023; v1 submitted 28 October, 2023; originally announced October 2023.

Comments: 13 pages, 10 figures

Ridge polariton laser: different from a semiconductor edge-emitting laser

Authors: H Souissi, M Gromovyi, T Gueye, C Brimont, L Doyennette, D Solnyshkov, G Malpuech, E Cambril, S Bouchoule, B Alloing, S Rennesson, F Semond, J Zúñiga-Pérez, T Guillet

Abstract: We experimentally demonstrate the difference between a ridge polariton laser, and a conventional edge-emitting ridge laser operating under electron-hole population inversion. The horizontal laser cavities are 20 -- 60 $μ$m long GaN etched ridge structures with vertical Bragg reflectors. We investigate the laser threshold under optical pum** and assess quantitatively the effect of a varying optic… ▽ More We experimentally demonstrate the difference between a ridge polariton laser, and a conventional edge-emitting ridge laser operating under electron-hole population inversion. The horizontal laser cavities are 20 -- 60 $μ$m long GaN etched ridge structures with vertical Bragg reflectors. We investigate the laser threshold under optical pum** and assess quantitatively the effect of a varying optically-pumped length. The laser effect is achieved for an exciton reservoir length of just 15% of the cavity length, which would not be possible in a conventional ridge laser, with an inversion-less polaritonic gain about 10 times larger than in equivalent GaN lasers. The modelling of the cavity free spectral range demonstrates the polaritonic nature of the modes. △ Less

Submitted 7 October, 2022; v1 submitted 12 January, 2022; originally announced January 2022.

Journal ref: Physical Review Applied 18, 044029 (2022)

Strong coupling of exciton-polaritons in a bulk GaN planar waveguide: quantifiying the coupling strength

Authors: C. Brimont, L. Doyennette, G. Kreyder, F. Réveret, P. Disseix, F. Médard, J. Leymarie, E. Cambril, S. Bouchoule, M. Gromovyi, B. Alloing, S. Rennesson, F. Semond, J. Zúñiga-Pérez, T. Guillet

Abstract: We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T=6~K to 300~K through gratings. They are carefully analyzed within four models based on different assumptions, in order to assess the strong coupling regime. We prove that the guided photons and excitons a… ▽ More We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T=6~K to 300~K through gratings. They are carefully analyzed within four models based on different assumptions, in order to assess the strong coupling regime. We prove that the guided photons and excitons are strongly coupled at all investigated temperatures, with a small $(11 \%)$ dependence on the temperature. However the values of the Rabi splitting strongly vary among the four models: the "coupled oscillator" model over-estimates the coupling; the analytical "Elliott-Tanguy" model precisely describes the dielectric susceptibility of GaN near the excitonic transition, leading to a Rabi splitting equal to $82 \pm 10 \ meV$ for TE0 modes; the experimental ellipsometry-based model leads to smaller values of $55 \pm 6 \ meV.$ We evidence that for waveguides including active layers with large oscillator strengths, as required for room-temperature polaritonic devices, a strong bending of the modes dispersion is not necessarily the signature of the strong-coupling, which requires for its reliable assessment a precise analysis of the material dielectric susceptibility. △ Less

Submitted 4 November, 2020; v1 submitted 12 February, 2020; originally announced February 2020.

Comments: 145 pages, 8 figures

Journal ref: Phys. Rev. Applied 14, 054060 (2020)

Dynamical control over the confinement of spatially indirect excitons in electrostatic traps of GaAs coupled quantum wells

Authors: Mussie Beian, Suzanne Dang, Mathieu Alloing, Romain Anankine, Edmond Cambril, Carmen Gomez, Johann Osmond, Aristide Lemaitre, Francois Dubin

Abstract: We study spatially indirect excitons confined in a 10 $μ$m wide electrostatic trap of a GaAs double quantum well. We introduce a technique to control the amplitude of the electric field interacting with the excitons electric dipole, with nanosecond precision. Our approach relies on electronic waveforms corrected for the distorsions occurring at highest frequencies so that impedance matching is not… ▽ More We study spatially indirect excitons confined in a 10 $μ$m wide electrostatic trap of a GaAs double quantum well. We introduce a technique to control the amplitude of the electric field interacting with the excitons electric dipole, with nanosecond precision. Our approach relies on electronic waveforms corrected for the distorsions occurring at highest frequencies so that impedance matching is not necessary. Thus, we manipulate the confinement of cold gases without inducing sizeable perturbations down to sub-Kelvin bath temperatures. △ Less

Submitted 30 October, 2017; originally announced October 2017.

Comments: 5 pages, 3 figures (to be published by Phys. Rev. Applied)

Edge-emitting polariton laser and amplifier based on a ZnO waveguide

Authors: O. Jamadi, F. Reveret, P. Disseix, F. Medard, J. Leymarie, A. Moreau, D. Solnyshkov, C. Deparis, M. Leroux, E. Cambril, S. Bouchoule, J. Zuniga-Perez, G. Malpuech

Abstract: We demonstrate edge-emitting exciton-polariton (polariton) lasing from 5 to 300 K and amplification of non-radiative guided polariton modes within ZnO waveguides. The mode dispersion below and above the lasing threshold is directly measured using gratings present on top of the sample, fully demonstrating the polaritonic nature of the lasing modes. The threshold is found to be similar to that of ra… ▽ More We demonstrate edge-emitting exciton-polariton (polariton) lasing from 5 to 300 K and amplification of non-radiative guided polariton modes within ZnO waveguides. The mode dispersion below and above the lasing threshold is directly measured using gratings present on top of the sample, fully demonstrating the polaritonic nature of the lasing modes. The threshold is found to be similar to that of radiative polarions in planar ZnO microcavities. These results open broad perspectives for guided polaritonics by allowing an easier and more straightforward implementation of polariton integrated circuits exploiting fast propagating polaritons. △ Less

Submitted 26 January, 2018; v1 submitted 1 August, 2017; originally announced August 2017.

Journal ref: Light-Science & Applications 7, 82 (2018)

Temporal Coherence of Spatially Indirect Excitons across Bose-Einstein Condensation: the Role of Free Carriers

Authors: Romain Anankine, Suzanne Dang, Mussie Beian, Edmond Cambril, Carmen Gomez Carbonell, Aristide Lemaitre, Francois Dubin

Abstract: We study the time coherence of the photoluminescence radiated by spatially indirect excitons confined in a 10 $μ$m electrostatic trap. Above a critical temperature of 1 Kelvin, we show that the photoluminescence has a homogeneous spectral width of about 500 $μ$eV which weakly varies with the exciton density. By contrast, the spectral width reduces by two-fold below the critical temperature and for… ▽ More We study the time coherence of the photoluminescence radiated by spatially indirect excitons confined in a 10 $μ$m electrostatic trap. Above a critical temperature of 1 Kelvin, we show that the photoluminescence has a homogeneous spectral width of about 500 $μ$eV which weakly varies with the exciton density. By contrast, the spectral width reduces by two-fold below the critical temperature and for experimental parameters at which excitons undergo a gray Bose-Einstein condensation. In this regime, we find evidence showing that the excitons temporal coherence is limited by their interaction with a low-concentration of residual excess charges, leading to a minimum photoluminescence spectral width of around 300 $μ$eV. △ Less

Submitted 21 May, 2018; v1 submitted 17 October, 2016; originally announced October 2016.

Comments: 11 pages, 4 figures

Quantized Vortices and Four-Component Superfluidity of Semiconductor Excitons

Authors: Romain Anankine, Mussie Beian, Suzanne Dang, Mathieu Alloing, Edmond Cambril, Kamel Merghem, Carmen Gomez Carbonell, Aristide Lemaitre, Francois Dubin

Abstract: We study spatially indirect excitons of GaAs quantum wells, confined in a 10 microns electrostatic trap. Below a critical temperature of about 1 Kelvin, we detect macroscopic spatial coherence and quantised vortices in the weak photoluminescence emitted from the trap. These quantum signatures are restricted to a narrow range of density, in a dilute regime. They manifest the formation of a four-com… ▽ More We study spatially indirect excitons of GaAs quantum wells, confined in a 10 microns electrostatic trap. Below a critical temperature of about 1 Kelvin, we detect macroscopic spatial coherence and quantised vortices in the weak photoluminescence emitted from the trap. These quantum signatures are restricted to a narrow range of density, in a dilute regime. They manifest the formation of a four-component superfluid, made by a low population of optically bright excitons coherently coupled to a dominant fraction of optically dark excitons. △ Less

Submitted 12 April, 2017; v1 submitted 15 June, 2016; originally announced June 2016.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. Lett. 118, 127402 (2017)

Spectroscopic Signatures for the Dark Bose-Einstein Condensation of Spatially Indirect Excitons

Authors: Mussie Beian, Mathieu Alloing, Romain Anankine, Edmond Cambril, Carmen Gomez Carbonell, Aristide Lemaitre, Francois Dubin

Abstract: We study semiconductor excitons confined in an electrostatic trap of a GaAs bilayer heterostructure. We evidence that optically bright excitonic states are strongly depleted while cooling to sub-Kelvin temperatures. In return, the other accessible and optically dark states become macroscopically occupied so that the overall exciton population in the trap is conserved. These combined behaviours con… ▽ More We study semiconductor excitons confined in an electrostatic trap of a GaAs bilayer heterostructure. We evidence that optically bright excitonic states are strongly depleted while cooling to sub-Kelvin temperatures. In return, the other accessible and optically dark states become macroscopically occupied so that the overall exciton population in the trap is conserved. These combined behaviours constitute the spectroscopic signature for the mostly dark Bose-Einstein condensation of excitons, which in our experiments is restricted to a dilute regime within a narrow range of densities, below a critical temperature of about 1K. △ Less

Submitted 30 October, 2017; v1 submitted 26 June, 2015; originally announced June 2015.

Comments: 7 pages and 5 figures

Journal ref: EuroPhys. Lett. 119, 37004 (2017)

Exciton/plasmon polaritons in GaAs/GaAlAs heterostructures near a metallic layer

Authors: J. Bellessa, C. Symonds, C. Meynaud, J. C. Plenet, E. Cambril, A. Miard, L. Ferlazzo, A. Lemaitre

Abstract: We report on the strong coupling between inorganic quantum well excitons and surface plasmons. For that purpose a corrugated silver film was deposited on the top of a heterostructure consisting of GaAs/GaAlAs quantum wells. The formation of plasmon/heavy-hole exciton/light-hole exciton mixed states is demonstrated with reflectometry experiments. The interaction energies amount to 21 meV for the… ▽ More We report on the strong coupling between inorganic quantum well excitons and surface plasmons. For that purpose a corrugated silver film was deposited on the top of a heterostructure consisting of GaAs/GaAlAs quantum wells. The formation of plasmon/heavy-hole exciton/light-hole exciton mixed states is demonstrated with reflectometry experiments. The interaction energies amount to 21 meV for the plasmon/light-hole exciton and 22 meV for the plasmon/heavy-hole exciton. Some particularities of the plasmon-exciton coupling were also discussed and qualitatively related to the plasmon polarization. △ Less

Submitted 24 September, 2008; originally announced September 2008.

Comments: 5 pages, 5 figures