Showing 1–30 of 30 results for author: Camarero, J

Giant and anisotropic enhancement of spin-charge conversion in double Rashba interface graphene-based quantum system

Authors: Alberto Anadón, Armando Pezo, Iciar Arnay, Rubén Guerrero, Adrián Gudín, Jaafar Ghanbaja, Julio Camarero, Aurelien Manchon, Sebastien Petit-Watelot, Paolo Perna, Juan-Carlos Rojas-Sánchez

Abstract: The ever-increasing demand for efficient data storage and processing has fueled the search for novel memory devices. Spintronics offers an alternative fast and efficient solution using spin-to-charge interconversion. In this work, we demonstrate a remarkable thirty-four-fold increase in spin-to-charge current conversion when incorporating a 2D epitaxial graphene monolayer between iron and platinum… ▽ More The ever-increasing demand for efficient data storage and processing has fueled the search for novel memory devices. Spintronics offers an alternative fast and efficient solution using spin-to-charge interconversion. In this work, we demonstrate a remarkable thirty-four-fold increase in spin-to-charge current conversion when incorporating a 2D epitaxial graphene monolayer between iron and platinum layers by exploring spin-pum** on-chip devices. Furthermore, we find that the spin conversion is also anisotropic. We attribute this enhancement and anisotropy to the asymmetric Rashba contributions driven by an unbalanced spin accumulation at the differently hybridized top and bottom graphene interfaces, as highlighted by ad-hoc first-principles theory. The improvement in spin-to-charge conversion as well as its anisotropy reveals the importance of interfaces in hybrid 2D-thin film systems opening up new possibilities for engineering spin conversion in 2D materials, leading to potential advances in memory, logic applications, or unconventional computing. △ Less

Submitted 6 June, 2024; originally announced June 2024.

Comments: 33 pages with double-spaced paragraphs. 23 pages without references. 4 figures and one extended figure. Supplementary information, not shown, contains 21 pages and 23 supplementary figures

Engineering a Spin-Orbit Bandgap in Graphene-Tellurium Heterostructures

Authors: B. Muñiz Cano, D. Pacilè, M. G. Cuxart, A. Amiri, F. Calleja, M. Pisarra, A. Sindona, F. Martín, E. Salagre, P. Segovia, E. G. Michel, A. L. Vázquez de Parga, R. Miranda, J. Camarero, M. Garnica, M. A. Valbuena

Abstract: Intensive research has focused on harnessing the potential of graphene for electronic, optoelectronic, and spintronic devices by generating a bandgap at the Dirac point and enhancing the spin-orbit interaction in the graphene layer. Proximity to heavy p elements is a promising approach; however, their interaction in graphene heterostructures has not been as intensively studied as that of ferromagn… ▽ More Intensive research has focused on harnessing the potential of graphene for electronic, optoelectronic, and spintronic devices by generating a bandgap at the Dirac point and enhancing the spin-orbit interaction in the graphene layer. Proximity to heavy p elements is a promising approach; however, their interaction in graphene heterostructures has not been as intensively studied as that of ferromagnetic, noble, or heavy d metals, neither as interlayers nor as substrates. In this study, the effective intercalation of Te atoms in a graphene on Ir(111) heterostructure is achieved. Combining techniques such as low energy electron diffraction and scanning tunneling microscopy, the structural evolution of the system as a function of the Te coverage is elucidated, uncovering up to two distinct phases. The presented angle-resolved photoemission spectroscopy analysis reveals the emergence of a bandgap of about 240 meV in the Dirac cone at room temperature, which preserves its characteristic linear dispersion. Furthermore, a pronounced n-do** effect induced by Te in the heterostructure is also observed, and remarkably the possibility of tuning the Dirac point energy towards the Fermi level by reducing the Te coverage while maintaining the open bandgap is demonstrated. Spin-resolved measurements unveil a non-planar chiral spin texture with significant splitting values for both in-plane and out-of-plane spin components. These experimental findings are consistent with the development of a quantum spin Hall phase, where a Te-enhanced intrinsic spin orbit coupling in graphene surpasses the Rashba one and promotes the opening of the spin-orbit bandgap. △ Less

Submitted 28 November, 2023; originally announced November 2023.

Comments: 9 pages, 4 figures

Isotropic spin and inverse spin Hall effect in epitaxial (111)-oriented Pt/Co bilayers

Authors: Adrián Gudín, Alberto Anadón, Iciar Arnay, Rubén Guerrero, Julio Camarero, Sebastien Petit-Watelot, Paolo Perna, Juan-Carlos Rojas-Sánchez

Abstract: The spin-to-charge current interconversion in bilayers composed of ferromagnetic and nonmagnetic layers with strong spin-orbit coupling has garnered considerable attention due to its exceptional potential in advancing spintronics devices for data storage and logic applications. Platinum (Pt) stands out as one of the most effective materials for generating spin current. While the spin conversion ef… ▽ More The spin-to-charge current interconversion in bilayers composed of ferromagnetic and nonmagnetic layers with strong spin-orbit coupling has garnered considerable attention due to its exceptional potential in advancing spintronics devices for data storage and logic applications. Platinum (Pt) stands out as one of the most effective materials for generating spin current. While the spin conversion efficiency is isotropic in polycrystalline Pt samples, an ongoing debate persists regarding its dependence on the crystalline direction in single crystalline samples. In this study, we aim to comprehensively evaluate the in-plane anisotropy of spin-charge interconversion using an array of complementary Spin Hall and inverse Spin Hall techniques with both incoherent and coherent excitation. Specifically, we investigate the spin-to-charge interconversion in epitaxial, (111)-oriented, Co/Pt bilayers with low surface roughness, as resulted from x-ray experiments. By varying the thickness of the Pt layer, we gain insights into the spin-charge interconversion in epitaxial Pt and highlight the effects of the interfaces. Our results demonstrate an isotropic behavior within the limits of our detection uncertainty. This finding significantly enhances our understanding of spin conversion in one of the most relevant systems in spintronics and paves the way for future research in this field. △ Less

Submitted 22 November, 2023; originally announced November 2023.

Comments: Article accepted for publication in Physical Review Materials, DOI not received yet

Experimental demonstration of a magnetically induced war** transition in a topological insulator mediated by rare-earth surface dopants

Authors: Beatriz Muñiz Cano, Yago Ferreiros, Pierre A. Pantaleón, Ji Dai, Massimo Tallarida, Adriana I. Figueroa, Vera Marinova, Kevin García Díez, Aitor Mugarza, Sergio O. Valenzuela, Rodolfo Miranda, Julio Camarero, Francisco Guinea, Jose Angel Silva-Guillén, Miguel A. Valbuena

Abstract: Magnetic topological insulators (MTI) constitute a novel class of materials where the topologically protected band structure coexists with long-range ferromagnetic order, which can lead to the breaking of time-reversal symmetry (TRS), introducing a bandgap in the Dirac cone-shaped topological surface state (TSS). The gap opening in MITs has been predicted to be accompanied by a distortion in the T… ▽ More Magnetic topological insulators (MTI) constitute a novel class of materials where the topologically protected band structure coexists with long-range ferromagnetic order, which can lead to the breaking of time-reversal symmetry (TRS), introducing a bandgap in the Dirac cone-shaped topological surface state (TSS). The gap opening in MITs has been predicted to be accompanied by a distortion in the TSS, evolving its warped shape from hexagonal to trigonal. In this work, we demonstrate such a transition by means of angle-resolved photoemission spectroscopy after the deposition of low concentrations of magnetic rare earths, namely Er and Dy, on the ternary three-dimensional prototypical topological insulator Bi$_2$Se$_2$Te. Signatures of the gap opening occurring as a consequence of the TRS breaking have also been observed, whose existence is supported by the observation of the aforementioned transition. Moreover, increasing the Er coverage results in a tunable p-type do** of the TSS. As a consequence, the Fermi level (E$_{\textrm{F}}$) of our Bi$_2$Se$_2$Te crystals can be gradually tuned towards the TSS Dirac point, and therefore to the magnetically induced bandgap; thus fulfilling two of the necessary prerequisites for the realization of the quantum anomalous Hall effect (QAHE) in this system. The experimental results are rationalized by a theoretical model where a magnetic Zeeman out-of-plane term is introduced in the hamiltonian governing the TSS band dispersion. Our results offer new strategies to control magnetic interactions with TSSs based on a simple approach and open up viable routes for the realization of the QAHE. △ Less

Submitted 3 February, 2023; originally announced February 2023.

Rashba-like spin textures in Graphene promoted by ferromagnet-mediated Electronic-Hybridization with heavy metal

Authors: Beatriz Muñiz Cano, Adrían Gudín, Jaime Sánchez-Barriga, Oliver J. Clark, Alberto Anadón, Jose Manuel Díez, Pablo Olleros-Rodríguez, Fernando Ajejas, Iciar Arnay, Matteo Jugovac, Julien Rault, Patrick Le Févre, François Bertran, Donya Mazhjoo, Gustav Bihlmayer, Stefan Blügel, Rodolfo Miranda, Julio Camarero, Miguel Angel Valbuena, Paolo Perna

Abstract: Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this g… ▽ More Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this goal requires the fundamental understanding of the microscopic origin of their unusual properties. Here, we elucidate the nature of the induced spin-orbit coupling (SOC) at Gr/Co interfaces on Ir. Through spin- and angle-resolved photoemission along with density functional theory, we show that the interaction of the HM with the C atomic layer via hybridization with the FM is the source of strong SOC in the Gr layer. Furthermore, our studies on ultrathin Co films underneath Gr reveal an energy splitting of $\sim$\,100 meV (negligible) for in-plane (out-of-plane) spin polarized Gr $π$ bands, consistent with a Rashba-SOC at the Gr/Co interface, which is either the fingerprint or the origin of the DMI. This mechanism vanishes at large Co thicknesses, where neither in-plane nor out-of-plane spin-orbit splitting is observed, indicating that Gr $π$ states are electronically decoupled from the HM. The present findings are important for future applications of Gr-based heterostructures in spintronic devices. △ Less

Submitted 1 May, 2023; v1 submitted 9 June, 2022; originally announced June 2022.

Comments: 11 pages, 7 figures

Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks

Authors: Suzanne Lancaster, Iciar Arnay, Ruben Guerrero, Adrian Gudín, Alejandra Guedeja-Marrón, Jose Manuel Diez Toledano, Jan Gärtner, Alberto Anadón, Maria Varela, Julio Camarero, Thomas Mikolajick, Paolo Perna, Stefan Slesazeck

Abstract: Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer deposition (ALD) of ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) directly on graphene (Gr)/Co/heavy metal (HM) epitaxial stacks is investigated via the implementation… ▽ More Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer deposition (ALD) of ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) directly on graphene (Gr)/Co/heavy metal (HM) epitaxial stacks is investigated via the implementation of several nucleation methods. With an in-situ method employing an Al$_2$O$_3$ layer, the HZO demonstrates a remanent polarization (2Pr) of 19.2 $μC/cm^2$. An ex-situ, naturally oxidized sputtered Ta layer for nucleation produces a film with 2Pr of 10.81 $μC/cm^2$, but a lower coercive field over the stack and switching enduring over subsequent cycles. Magnetic hysteresis measurements taken before and after ALD deposition show strong perpendicular magnetic anisotropy (PMA), with only slight deviations in the magnetic coercive fields due to the HZO deposition process, thus pointing to a good preservation of the single-layer Gr. X-ray diffraction measurements further confirm that the high-quality interfaces demonstrated in the stack remain unperturbed by the ferroelectric deposition and anneal. △ Less

Submitted 23 March, 2023; v1 submitted 20 September, 2021; originally announced September 2021.

Comments: Accepted at ACS Applied Materials & Interfaces

Direct X-ray detection of the spin Hall effect in CuBi

Authors: Sandra Ruiz-Gómez, Rubén Guerrero, Muhammad W. Khaliq, Claudia Fernández-González, Jordi Prat, Andrés Valera, Simone Finizio, Paolo Perna, Julio Camarero, Lucas Pérez, Lucía Aballe, Michael Foerster

Abstract: The spin Hall effect and its inverse are important spin-charge conversion mechanisms. The direct spin Hall effect induces a surface spin accumulation from a transverse charge current due to spin orbit coupling even in non-magnetic conductors. However, most detection schemes involve additional interfaces, leading to large scattering in reported data. Here we perform interface free x-ray spectroscop… ▽ More The spin Hall effect and its inverse are important spin-charge conversion mechanisms. The direct spin Hall effect induces a surface spin accumulation from a transverse charge current due to spin orbit coupling even in non-magnetic conductors. However, most detection schemes involve additional interfaces, leading to large scattering in reported data. Here we perform interface free x-ray spectroscopy measurements at the Cu L_{3,2} absorption edges of highly Bi-doped Cu (Cu_{95}Bi_{5}). The detected X-ray magnetic circular dichroism (XMCD) signal corresponds to an induced magnetic moment of (2.7 +/- 0.5) x 10-12 μ_{B} A^{-1} cm^{2} per Cu atom averaged over the probing depth, which is of the same order as for Pt measured by magneto-optics. The results highlight the importance of interface free measurements to assess material parameters and the potential of CuBi for spin-charge conversion applications. △ Less

Submitted 6 July, 2021; originally announced July 2021.

Origin of the Large Perpendicular Magnetic Anisotropy in Nanometer-thick Epitaxial Graphene/Co/Heavy Metal Heterostructures

Authors: M. Blanco-Rey, P. Perna, A. Gudin, J. M. Diez, A. Anadon Leticia de Melo Costa, Manuel Valvidares, Pierluigi Gargiani, Alejandra Guedeja-Marron, Mariona Cabero, M. Varela, C. Garcia-Fernandez, M. M. Otrokov, J. Camarero, R. Miranda, A. Arnau, J. I. Cerda

Abstract: A combination of theoretical modelling and experiments reveals the origin of the large perpendicular magnetic anisotropy (PMA) that appears in nanometer-thick epitaxial Co films intercalated between graphene (Gr) and a heavy metal (HM) substrate, as a function of the Co thickness. High quality epitaxial Gr/Co\n/HM(111) (HM=Pt,Ir) heterostructures are grown by intercalation below graphene, which ac… ▽ More A combination of theoretical modelling and experiments reveals the origin of the large perpendicular magnetic anisotropy (PMA) that appears in nanometer-thick epitaxial Co films intercalated between graphene (Gr) and a heavy metal (HM) substrate, as a function of the Co thickness. High quality epitaxial Gr/Co\n/HM(111) (HM=Pt,Ir) heterostructures are grown by intercalation below graphene, which acts as a surfactant that kinetically stabilizes the pseudomorphic growth of highly perfect Co face-centered tetragonal ($fct$) films, with a reduced number of stacking faults as the only structural defect observable by high resolution scanning transmission electron microscopy (HR-STEM). Magneto-optic Kerr effect (MOKE) measurements show that such heterostructures present PMA up to large Co critical thicknesses of about 4~nm (20~ML) and 2~nm (10~ML) for Pt and Ir substrates, respectively, while X-ray magnetic circular dichroism (XMCD) measurements show an inverse power law of the anistropy of the orbital moment with Co thickness, reflecting its interfacial nature, that changes sign at about the same critical values. First principles calculations show that, regardless of the presence of graphene, ideal Co $fct$ films on HM buffers do not sustain PMAs beyond around 6~MLs due to the in-plane contribution of the inner bulk-like Co layers. The large experimental critical thicknesses sustaining PMA can only be retrieved by the inclusion of structural defects that promote a local $hcp$ stacking such as twin boundaries or stacking faults. Remarkably, a layer resolved analysis of the orbital momentum anisotropy reproduces its interfacial nature, and reveals that the Gr/Co interface contribution is comparable to that of the Co/Pt(Ir). △ Less

Submitted 11 December, 2020; originally announced December 2020.

Comments: 25 pages, 4 figures, 1 table

Direct determination of Spin-Orbit torque by using dc current-voltage characteristics

Authors: R. Guerrero, A. Anadon, A. Gudin, J. M. Diez, P. Olleros-Rodriguez, M. Muñoz, R. Miranda, J. Camarero, P. Perna

Abstract: Spin polarized currents are employed to efficiently manipulate the magnetization of ferromagnetic ultrathin films by exerting a torque on it. If the spin currents are generated by means of the spin-orbit interaction between a ferromagnetic and a non-magnetic layer, the effect is known as spin-orbit torque (SOT), and is quantified by measuring the effective fields produced by a charge current injec… ▽ More Spin polarized currents are employed to efficiently manipulate the magnetization of ferromagnetic ultrathin films by exerting a torque on it. If the spin currents are generated by means of the spin-orbit interaction between a ferromagnetic and a non-magnetic layer, the effect is known as spin-orbit torque (SOT), and is quantified by measuring the effective fields produced by a charge current injected into the device. In this work, we present a new experimental technique to quantify directly the SOT based on the measurement of non-linearities of the dc current-voltage (IV) characteristics in Hall bar devices employing a simple instrumentation. Through the analysis of the IV curves, the technique provides directly the linearity of the effective fields with current, the detection of the current range in which the thermal effects can be relevant, the appearance of misalignments artefacts when the symmetry relations of SOT are not fulfilled, and the conditions for the validity of the single domain approximations, which are not considered in switching current and second harmonic generation state-of-the-art experiments. We have studied the SOT induced antidam** and field-like torques in Ta/Co/Pt asymmetric stacks with perpendicular magnetic anisotropy. △ Less

Submitted 6 April, 2020; originally announced April 2020.

Experimental evidence of spin-orbit torque from metallic interfaces

Authors: A. Anadón, R. Guerrero, J. A. Jover-Galtier, A. Gudín, J. M. Díez, P. Olleros-Rodríguez, R. Miranda, J. Camarero, P. Perna

Abstract: Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements reveal a six-fold increase of the spin-orbit torque accompanied by a drastic reduction of the spin Hall magnetoresistance upon the introduction of a Cu interlayer i… ▽ More Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements reveal a six-fold increase of the spin-orbit torque accompanied by a drastic reduction of the spin Hall magnetoresistance upon the introduction of a Cu interlayer in a Pt/Cu/Co/Pt structure with perpendicular magnetic anisotropy. We analyze the dependence of the spin Hall magnetoresistance with the thickness of the interlayer in the frame of a drift diffusion model that provides information on the expected spin currents and spin accumulations in the system. The results demonstrate that the major responsible of both effects is spin memory loss at the interface. The enhancement of the spin-orbit torque when introducing an interlayer opens the possibility to design more effient spintronic devices based on materials that are cheap and abundant such as copper. △ Less

Submitted 17 March, 2020; originally announced March 2020.

Comments: 12 pages, 5 figures

Journal ref: ACS Appl. Nano Mater. 2021, 4, 1, 487-492

Intrinsic mixed Bloch-Néel character and chirality switch of skyrmions in asymmetric epitaxial trilayer

Authors: Pablo Olleros-Rodríguez, Ruben Guerrero, Julio Camarero, Oksana Chubykalo-Fesenko, Paolo Perna

Abstract: Recent advances on the stabilization and manipulation of chiral magnetization configurations in systems consisting in alternating atomic layers of ferromagnetic and non-magnetic materials hold promise of innovation in spintronics technology. The low dimensionality of the systems promotes spin orbit driven interfacial effects like antisymmetric Dzyaloshinskii-Moriya interactions (DMI) and surface m… ▽ More Recent advances on the stabilization and manipulation of chiral magnetization configurations in systems consisting in alternating atomic layers of ferromagnetic and non-magnetic materials hold promise of innovation in spintronics technology. The low dimensionality of the systems promotes spin orbit driven interfacial effects like antisymmetric Dzyaloshinskii-Moriya interactions (DMI) and surface magnetic anisotropy, whose relative strengths may be tuned to achieve stable nanometer sized magnetic objects with fixed chirality. While in most of the cases this is obtained by engineering complex multilayers stacks in which interlayer dipolar fields become important, we consider here a simple epitaxial trilayer in which a ferromagnet, with variable thickness, is embedded between a heavy metal and graphene. The latter enhances the perpendicular magnetic anisotropy of the system, promotes a Rashba-type DMI, and can sustain very long spin diffusion length. We use a layer-resolved micromagnetic model (LRM) to describe the magnetization textures and their chirality. Our results demonstrate that for Co thickness larger than 3.6 nm, a skyrmion having an intrinsic mixed Bloch-Néel character with counter-clock-wise chirality is stabilized in the entire (single) Co layer. Noteworthy, for thicknesses larger than 5.4 nm, the skyrmion switches its chirality, from counter-clock-wise to clock-wise. △ Less

Submitted 19 December, 2019; originally announced December 2019.

Comments: 10 pages, 7 figures

Journal ref: ACS Appl. Mater. Interfaces 2020

Thermally Activated Processes for Ferromagnet Intercalation in Graphene-Heavy Metal Interfaces

Authors: F. Ajejas, A. Anadón, A. Gudin, J. M. Diez, C. G. Ayani, P. Olleros, L. de Melo Costa, C. Navío, A. Gutierrez, F. Calleja, A. L. Vázquez de Parga, R. Miranda, J. Camarero, P. Perna

Abstract: The development of graphene (Gr) spintronics requires the ability to engineer epitaxial Gr heterostructures with interfaces of high quality, in which the intrinsic properties of Gr are modified through proximity with a ferromagnet to allow for efficient room temperature spin manipulation or the stabilization of new magnetic textures. These heterostructures can be prepared in a controlled way by in… ▽ More The development of graphene (Gr) spintronics requires the ability to engineer epitaxial Gr heterostructures with interfaces of high quality, in which the intrinsic properties of Gr are modified through proximity with a ferromagnet to allow for efficient room temperature spin manipulation or the stabilization of new magnetic textures. These heterostructures can be prepared in a controlled way by intercalation through graphene of different metals. Using photoelectron spectroscopy (XPS) and Scanning Tunneling Microscopy (STM), we achieve a nanoscale control of thermal activated intercalation of homogeneous ferromagnetic (FM) layer underneath epitaxial Gr grown onto (111)-oriented heavy metal (HM) buffers deposited in turn onto insulating oxide surfaces. XPS and STM demonstrate that Co atoms evaporated on top of Gr arrange in 3D clusters, and, upon thermal annealing, penetrate through and diffuse below Gr in a 2D fashion. The complete intercalation of the metal occurs at specific temperatures depending on the type of metallic buffer. The activation energy and the optimum temperature for the intercalation processes are determined. We describe a reliable method to fabricate and characterize in-situ high quality Gr-FM/HM heterostructures enabling the realization of novel spin-orbitronic devices that exploits the extraordinary properties of Gr. △ Less

Submitted 19 November, 2019; v1 submitted 18 November, 2019; originally announced November 2019.

Comments: 13 pages, 6 figures

Journal ref: ACS Appl. Mater. Interfaces 2019

RMATE: A device to test radiation-induced effects under controlled magnetic field and temperature

Authors: I. Garcia-Cortes, S. Cabrera, M. Medrano, A. Moroño, P. Muñoz, A. Soleto, I. Bugallo, A. Nieto, R. Altimira, A. Bollero, J. Camarero, J. L. F. Cuñado

Abstract: This study shows the development and performance assessment of a novel set-up that enables the research of structural materials for fusion reactors, by making possible simultaneous application of temperature (up to 450$^{\circ}$C) and magnetic field (close to 0.6 T) during irradiation experiments. These aspects become critical as structural materials in fusion reactors are exposed to intense radia… ▽ More This study shows the development and performance assessment of a novel set-up that enables the research of structural materials for fusion reactors, by making possible simultaneous application of temperature (up to 450$^{\circ}$C) and magnetic field (close to 0.6 T) during irradiation experiments. These aspects become critical as structural materials in fusion reactors are exposed to intense radiation levels under the presence of strong magnetic fields. Moreover, material microstructural could be modified by radiation-induce propagating defects, which are thought to be sensitive to magnetic field. The device has three main components: magnetic closure, sample holder with integrated heater, and radiation shield. It is provided with a thermal shield to prevent other elements of the device to heat up and fail. A map** of the magnetic flux in the region where sample and heater are located has been modeled by finite elements simulation software and correlated with magnetic measurements △ Less

Submitted 28 May, 2019; originally announced May 2019.

Comments: Submitted to Fusion Engineering Design (May 2019)

Towards magnetic control of magnetite

Authors: F. J. Pedrosa, J. L. F. Cuñado, P. Perna, M. Sanz, M. Oujja, E. Rebollar, J. F. Marco, J. de la Figuera, M. Monti, M. Castillejo, M. Garcia-Hernández, F. Mompeán, J. Camarero, A. Bollero

Abstract: High quality stoichiometric magnetite (Fe3O4) films grown by infrared pulsed laser deposition (IR-PLD) on different surfaces were investigated in order to study the influence of the substrate, orientation, and thickness on their magnetic behavior. Different single crystal (001)-oriented substrates, i.e., SrTiO3(001), MgAl2O4(001) and MgO(001), have been used for the preparation of epitaxial Fe3O4(… ▽ More High quality stoichiometric magnetite (Fe3O4) films grown by infrared pulsed laser deposition (IR-PLD) on different surfaces were investigated in order to study the influence of the substrate, orientation, and thickness on their magnetic behavior. Different single crystal (001)-oriented substrates, i.e., SrTiO3(001), MgAl2O4(001) and MgO(001), have been used for the preparation of epitaxial Fe3O4(001) films. By comparison, polycrystalline magnetite films were obtained on both single crystal Al2O3(0001) and amorphous Si/SiO2 substrates. The thickness has been varied between 50 - 400 nm. All films consist of nanocrystalline stoichiometric magnetite with very small strain (<1\%) and present the Verwey transition (Tv) between 110-120 K, i.e., close to bulk magnetite (122 K). In general, Tv depends on both microstructure and thickness, increasing mainly as the thickness increases. Room temperature angular-dependent measurements reveal an in-plane fourfold symmetry magnetic behavior for all films grown on (001)-oriented surfaces, and with the easy axes lying along the Fe3O4 [010] and [100] directions. Remarkably, the fourfold magnetic symmetry shows up to 400 nm thick films. In turn, the films grown on single crystal Al2O3 (0001) and on amorphous Si/SiO2 surfaces display an isotropic magnetic behavior. Coercive field (Hc) depends on microstructure and film thickness. The largest (lowest) Hc value corresponds to the thinner film grown on a single crystal SrTiO3(001) (amorphous Si/SiO2) surface, which present the largest (lowest) strain (crystallinity). Moreover, the coercivity follows an inverse law with film thickness. Our results demonstrate that we can artificially control the magnetic behavior of stoichiometric IR-PLD grown Fe3O4 films by exploiting substrate-induced anisotropy and thickness-controlled coercivity, that might be relevant to incorporate magnetite in future spintronic devices. △ Less

Submitted 13 May, 2019; originally announced May 2019.

Engineering Large Anisotropic Magnetoresistance in La0.7Sr0.3MnO3 Films at Room Temperature

Authors: Paolo Perna, Davide Maccariello, Fernando Ajejas, Ruben Guerrero, Laurence Méchin, Stephane Flament, Jacobo Santamaria, Rodolfo Miranda, Julio Camarero

Abstract: The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in materials depending on the specific system and measuring configuration. Half-metallic manganites hold promise for spintronic applications but the complexity of co… ▽ More The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in materials depending on the specific system and measuring configuration. Half-metallic manganites hold promise for spintronic applications but the complexity of competing interactions has not permitted the understanding and control of their magnetotransport properties to enable the realization of their technological potential. Here we report on the ability to induce a dominant switchable magnetoresistance in La0.7Sr0.3MnO3 epitaxial films, at room temperature (RT). By engineering an extrinsic magnetic anisotropy, we show a large enhancement of anisotropic magnetoresistance (AMR) which leads to, at RT, signal changes much larger than the other contributions such as the colossal magnetoresistance (CMR). The dominant extrinsic AMR exhibits large variation in the resistance in low field region, showing high sensitivity to applied low magnetic fields. These findings have a strong impact on the real applications of manganite based devices for the high-resolution low field magnetic sensors or spintronics. △ Less

Submitted 26 November, 2018; originally announced November 2018.

Comments: 10 pages, 6 figures

Journal ref: Adv. Funct. Mater. 2017, 27, 1700664

Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications

Authors: Sandeep Kumar Chaluvadi, Fernando Ajejas, Pasquale Orgiani, Olivier Rousseau, Giovanni Vinai, Aleksandr Yu Petrov, Piero Torelli, Alain Pautrat, Julio Camarero, Paolo Perna, Laurence Mechin

Abstract: Spintronics exploits the magnetoresistance effects to store or sense the magnetic information. Since the magnetoresistance strictly depends on the magnetic anisotropy of the system, it is fundamental to set a defined anisotropy to the system. Here, we investigate by means of vectorial Magneto-Optical Kerr Magnetometry (v-MOKE), half-metallic La0.67Sr0.33MnO3 (LSMO) thin films that exhibit at room… ▽ More Spintronics exploits the magnetoresistance effects to store or sense the magnetic information. Since the magnetoresistance strictly depends on the magnetic anisotropy of the system, it is fundamental to set a defined anisotropy to the system. Here, we investigate by means of vectorial Magneto-Optical Kerr Magnetometry (v-MOKE), half-metallic La0.67Sr0.33MnO3 (LSMO) thin films that exhibit at room temperature pure biaxial magnetic anisotropy if grown onto MgO (001) substrate with a thin SrTiO3 (STO) buffer. In this way, we can avoid unwanted uniaxial magnetic anisotropy contributions that may be detrimental for specific applications. The detailed study of the angular evolution of the magnetization reversal pathways, critical fields (coercivity and switching) allows for disclosing the origin of the magnetic anisotropy, which is magnetocrystalline in nature and shows four-fold symmetry at any temperature. △ Less

Submitted 12 October, 2018; originally announced October 2018.

Journal ref: Appl. Phys. Lett. 113, 052403 (2018)

Unravelling Dzyaloshinskii-Moriya interaction and chiral nature of Graphene/Cobalt interface

Authors: Fernando Ajejas, Adrian Gudín, Ruben Guerrero, Miguel Angel Niño, Stefania Pizzini, Jan Vogel, Manuel Valvidares, Pierluigi Gargiani, Mariona Cabero, Maria Varela, Julio Camarero, Rodolfo Miranda, Paolo Perna

Abstract: A major challenge for future spintronics is to develop suitable spin transport channels with long spin lifetime and propagation length. Graphene can meet these requirements, even at room temperature. On the other side, taking advantage of the fast motion of chiral textures, i.e., Néel-type domain walls and magnetic skyrmions, can satisfy the demands for high-density data storage, low power consump… ▽ More A major challenge for future spintronics is to develop suitable spin transport channels with long spin lifetime and propagation length. Graphene can meet these requirements, even at room temperature. On the other side, taking advantage of the fast motion of chiral textures, i.e., Néel-type domain walls and magnetic skyrmions, can satisfy the demands for high-density data storage, low power consumption and high processing speed. We have engineered epitaxial structures where an epitaxial ferromagnetic Co layer is sandwiched between an epitaxial Pt(111) buffer grown in turn onto MgO(111) substrates and a graphene layer. We provide evidence of a graphene-induced enhancement of the perpendicular magnetic anisotropy up to 4 nm thick Co films, and of the existence of chiral left-handed Néel-type domain walls stabilized by the effective Dzyaloshinskii-Moriya interaction (DMI) in the stack. The experiments show evidence of a sizeable DMI at the gr/Co interface, which is described in terms of a conduction electron mediated Rashba-DMI mechanism and points opposite to the Spin Orbit Coupling-induced DMI at the Co/Pt interface. In addition, the presence of graphene results in: i) a surfactant action for the Co growth, producing an intercalated, flat, highly perfect fcc film, pseudomorphic with Pt and ii) an efficient protection from oxidation. The magnetic chiral texture is stable at room temperature and grown on insulating substrate. Our findings open new routes to control chiral spin structures using interfacial engineering in graphene-based systems for future spin-orbitronics devices fully integrated on oxide substrates. △ Less

Submitted 2 April, 2018; v1 submitted 20 March, 2018; originally announced March 2018.

Comments: 10 pages, 6 figures

Journal ref: Nano Letters 2018

Interfacial exchange coupling induced chiral symmetry-breaking of Spin-Orbit effects

Authors: P. Perna, F. Ajejas, D. Maccariello, J. L. Fernandez Cuñado, R. Guerrero, M. A. Niño, A. Bollero, R. Miranda, J. Camarero

Abstract: We demonstrate that the interfacial exchange coupling in ferromagnetic/antiferromagnetic (FM/AFM) systems induces symmetry-breaking of the Spin-Orbit (SO) effects. This has been done by studying the field and angle dependencies of anisotropic magnetoresistance and vectorialresolved magnetization hysteresis loops, measured simultaneously and reproduced with numerical simulations. We show how the in… ▽ More We demonstrate that the interfacial exchange coupling in ferromagnetic/antiferromagnetic (FM/AFM) systems induces symmetry-breaking of the Spin-Orbit (SO) effects. This has been done by studying the field and angle dependencies of anisotropic magnetoresistance and vectorialresolved magnetization hysteresis loops, measured simultaneously and reproduced with numerical simulations. We show how the induced unidirectional magnetic anisotropy at the FM/AFM interface results in strong asymmetric transport behaviors, which are chiral around the magnetization hard-axis direction. Similar asymmetric features are anticipated in other SO-driven phenomena. △ Less

Submitted 23 December, 2017; originally announced December 2017.

Comments: 6 pages, 5 figures

Journal ref: Physical Review B 92, 220422(R) (2015)

Tuning domain wall velocity with Dzyaloshinskii-Moriya interaction

Authors: Fernando Ajejas, Viola Krizakova, Dayane de Souza Chaves, Jan Vogel, Paolo Perna, Ruben Guerrero, Adrian Gudin, Julio Camarero, Stefania Pizzini

Abstract: We have studied a series of Pt/Co/M epitaxial trilayers, in which Co is sandwiched between Pt and a non magnetic layer M (Pt, Ir, Cu, Al). Using polar magneto-optical Kerr microscopy, we show that the field- induced domain wall speeds are strongly dependent on the nature of the top layer, they increase going from M=Pt to lighter top metallic overlayers, and can reach several 100 m/s for Pt/Co/Al.… ▽ More We have studied a series of Pt/Co/M epitaxial trilayers, in which Co is sandwiched between Pt and a non magnetic layer M (Pt, Ir, Cu, Al). Using polar magneto-optical Kerr microscopy, we show that the field- induced domain wall speeds are strongly dependent on the nature of the top layer, they increase going from M=Pt to lighter top metallic overlayers, and can reach several 100 m/s for Pt/Co/Al. The DW dynamics is consistent with the presence of chiral Néel walls stabilized by interfacial Dzyaloshinskii-Moriya interaction (DMI) whose strength increases going from Pt to Al top layers. This is explained by the presence of DMI with opposite sign at the Pt/Co and Co/M interfaces, the latter increasing in strength going towards heavier atoms, possibly due to the increasing spin-orbit interaction. This work shows that in non-centrosymmetric trilayers the domain wall dynamics can be finely tuned by engineering the DMI strength, in view of efficient devices for logic and spitronics applications. △ Less

Submitted 28 September, 2017; originally announced September 2017.

Comments: 5 pages, 4 Figures

Room Temperature In-plane <100> Magnetic Easy Axis for Fe3O4/SrTiO3(001):Nb Grown by Infrared PLD

Authors: Matteo Monti, Mikel Sanz, Mohamed Oujja, Esther Rebollar, Marta Castillejo, Marta Castillejo, Alberto Bollero, Julio Camarero, Jose Luis F. Cuñado, Norbert M. Nemes, Federico J. Mompean, Mar Garcia-Hernández, Shu Nie, Kevin F. McCarty, Alpha T. N'Diaye, Gong Chen, Andreas K. Schmid, José F. Marco, Juan de la Figuera

Abstract: We examine the magnetic easy-axis directions of stoichiometric magnetite films grown on SrTiO3:Nb by infrared pulsed-laser deposition. Spin-polarized low-energy electron microscopy reveals that the individual magnetic domains are magnetized along the in-plane <100> film directions. Magneto-optical Kerr effect measurements show that the maxima of the remanence and coercivity are also along in-plane… ▽ More We examine the magnetic easy-axis directions of stoichiometric magnetite films grown on SrTiO3:Nb by infrared pulsed-laser deposition. Spin-polarized low-energy electron microscopy reveals that the individual magnetic domains are magnetized along the in-plane <100> film directions. Magneto-optical Kerr effect measurements show that the maxima of the remanence and coercivity are also along in-plane <100> film directions. This easy-axis orientation differs from bulk magnetite and films prepared by other techniques, establishing that the magnetic anisotropy can be tuned by film growth. △ Less

Submitted 25 July, 2013; originally announced July 2013.

Comments: 3 pages, 3 figures

Tailoring magnetic anisotropy in epitaxial half metallic La0.7Sr0.3MnO3 thin films

Authors: P. Perna, C. Rodrigo, E. Jiménez, F. J. Teran, L. Méchin, N. Mikuszeit, J. Camarero, R. Miranda

Abstract: We present a detailed study on the magnetic properties, including anisotropy, reversal fields, and magnetization reversal processes, of well characterized half-metallic epitaxial La0.7Sr0.3MnO3 (LSMO) thin films grown onto SrTiO3 (STO) substrates with three different surface orientations, i.e. (001), (110) and (1-18). The latter shows step edges oriented parallel to the [110] (in-plane) crystallog… ▽ More We present a detailed study on the magnetic properties, including anisotropy, reversal fields, and magnetization reversal processes, of well characterized half-metallic epitaxial La0.7Sr0.3MnO3 (LSMO) thin films grown onto SrTiO3 (STO) substrates with three different surface orientations, i.e. (001), (110) and (1-18). The latter shows step edges oriented parallel to the [110] (in-plane) crystallographic direction. Room temperature high resolution vectorial Kerr magnetometry measurements have been performed at different applied magnetic field directions in the whole angular range. In general, the magnetic properties of the LSMO films can be interpreted with just the uniaxial term with the anisotropy axis given by the film morphology, whereas the strength of this anisotropy depends on both structure and film thickness. In particular, LSMO films grown on nominally flat (110)-oriented STO substrates presents a well defined uniaxial anisotropy originated from the existence of elongated in-plane [001]-oriented structures, whereas LSMO films grown on nominally flat (001)-oriented STO substrates show a weak uniaxial magnetic anisotropy with the easy axis direction aligned parallel to residual substrate step edges. Elongated structures are also found for LSMO films grown on vicinal STO(001) substrates. These films present a well-defined uniaxial magnetic anisotropy with the easy axis lying along the step edges and its strength increases with the LSMO thickness. It is remarkable that this step-induced uniaxial anisotropy has been found for LSMO films up to 120 nm thickness. Our results are promising for engineering novel half-metallic magnetic devices that exploit tailored magnetic anisotropy. △ Less

Submitted 9 March, 2011; v1 submitted 3 May, 2010; originally announced May 2010.

Comments: 10 pages, 10 figures, 1 table

Journal ref: JOURNAL OF APPLIED PHYSICS 110, 013919 (2011)

Direct observation of Oersted-field-induced magnetization dynamics in magnetic nanostripes

Authors: Vojtech Uhlîr, Stefania Pizzini, Nicolas Rougemaille, Vincent Cros, Erika Jimenez, Laurent Ranno, Olivier Fruchart, Michal Urbanek, Gilles Gaudin, Julio Camarero, Carsten Tieg, Fausto Sirotti, Edouard Wagner, Jan Vogel

Abstract: We have used time-resolved x-ray photoemission electron microscopy to investigate the magnetization dynamics induced by nanosecond current pulses in NiFe/Cu/Co nanostripes. A large tilt of the NiFe magnetization in the direction transverse to the stripe is observed during the pulses. We show that this effect cannot be quantitatively understood from the amplitude of the Oersted field and the shape… ▽ More We have used time-resolved x-ray photoemission electron microscopy to investigate the magnetization dynamics induced by nanosecond current pulses in NiFe/Cu/Co nanostripes. A large tilt of the NiFe magnetization in the direction transverse to the stripe is observed during the pulses. We show that this effect cannot be quantitatively understood from the amplitude of the Oersted field and the shape anisotropy. High frequency oscillations observed at the onset of the pulses are attributed to precessional motion of the NiFe magnetization about the effective field. We discuss the possible origins of the large magnetization tilt and the potential implications of the static and dynamic effects of the Oersted field on current-induced domain wall motion in such stripes. △ Less

Submitted 14 January, 2011; v1 submitted 5 February, 2010; originally announced February 2010.

Comments: Published in Phys. Rev. B 83, 020406 (2011) (Rapid Communications)

Journal ref: Physical Review B 83 (2011) 020406

High domain wall velocity at zero magnetic field induced by low current densities in spin-valve nanostripes

Authors: Stefania Pizzini, Vojtech Uhlir, Jan Vogel, Nicolas Rougemaille, Sana Laribi, Vincent Cros, Erika Jimenez, Julio Camarero, Carsten Tieg, Edgar Bonet, Marlio Bonfim, Richard Mattana, Cyrile Deranlot, Frédric Petroff, Christian Ulysse, Giancarlo Faini, Albert Fert

Abstract: Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below $10^{12} \unit{A/m^2}$, suggesting that these trilaye… ▽ More Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below $10^{12} \unit{A/m^2}$, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities. △ Less

Submitted 30 January, 2009; v1 submitted 20 October, 2008; originally announced October 2008.

Comments: Published version, Applied Physics Express 2, 023003 (2009) http://dx.doi.org/10.1143/APEX.2.023003

Journal ref: Applied Physics Express 2 (2009) 023003

Layer-resolved imaging of domain wall interactions in magnetic tunnel junction-like trilayers

Authors: Jan Vogel, Salia Cherifi, Stefania Pizzini, Fabien Romanens, Julio Camarero, Frédéric Petroff, Stefan Heun, Andrea Locatelli

Abstract: We have performed a layer-resolved, microscopic study of interactions between domain walls in two magnetic layers separated by a non-magnetic one, using high-resolution x-ray photoemission electron microscopy. Domain walls in the hard magnetic Co layer of a Co/Al2O3/FeNi trilayer with in-plane uniaxial anisotropy strongly modify the local magnetization direction in the soft magnetic FeNi layer.… ▽ More We have performed a layer-resolved, microscopic study of interactions between domain walls in two magnetic layers separated by a non-magnetic one, using high-resolution x-ray photoemission electron microscopy. Domain walls in the hard magnetic Co layer of a Co/Al2O3/FeNi trilayer with in-plane uniaxial anisotropy strongly modify the local magnetization direction in the soft magnetic FeNi layer. The stray fields associated to the domain walls lead to an antiparallel coupling between the local Co and FeNi moments. For domain walls parallel to the easy magnetization axis this interaction is limited to the domain wall region itself. For strongly charged (head-on or tail-to-tail) walls, the antiparallel coupling dominates the interaction over radial distances up to several micrometers from the centre of the domain wall. △ Less

Submitted 8 November, 2007; v1 submitted 27 February, 2007; originally announced February 2007.

Comments: Published version, J. Phys.: Condens. Matter 19, 476204 (2007)

Journal ref: Journal of Physics Condensed Matter 19 (2007) 476204

Influence of topography and Co domain walls on the magnetization reversal of the FeNi layer in FeNi/Al$\_2$O$\_3$/Co magnetic tunnel junctions

Authors: Fabien Romanens, Jan Vogel, Wolfgang Kuch, Keiki Fukumoto, Julio Camarero, Stefania Pizzini, Marlio Bonfim, Frédéric Petroff

Abstract: We have studied the magnetization reversal dynamics of FeNi/Al$\_2$O$\_3$/Co magnetic tunnel junctions deposited on step-bunched Si substrates using magneto-optical Kerr effect and time-resolved x-ray photoelectron emission microscopy combined with x-ray magnetic circular dichroism (XMCD-PEEM). Different reversal mechanisms have been found depending on the substrate miscut angle. Larger terraces… ▽ More We have studied the magnetization reversal dynamics of FeNi/Al$\_2$O$\_3$/Co magnetic tunnel junctions deposited on step-bunched Si substrates using magneto-optical Kerr effect and time-resolved x-ray photoelectron emission microscopy combined with x-ray magnetic circular dichroism (XMCD-PEEM). Different reversal mechanisms have been found depending on the substrate miscut angle. Larger terraces (smaller miscut angles) lead to a higher nucleation density and stronger domain wall pinning. The width of domain walls with respect to the size of the terraces seems to play an important role in the reversal. We used the element selectivity of XMCD-PEEM to reveal the strong influence of the stray field of domain walls in the hard magnetic layer on the magnetic switching of the soft magnetic layer. △ Less

Submitted 6 October, 2006; originally announced October 2006.

Comments: 8 Pages, 7 Figures

Dynamics of magnetic domain wall motion after nucleation: Dependence on the wall energy

Authors: Keiki Fukumoto, Wolfgang Kuch, Jan Vogel, Fabien Romanens, Stefania Pizzini, Julio Camarero, Marlio Bonfim, Jürgen Kirschner

Abstract: The dynamics of magnetic domain wall motion in the FeNi layer of a FeNi/Al2O3/Co trilayer has been investigated by a combination of x-ray magnetic circular dichroism, photoelectron emission microscopy, and a stroboscopic pump-probe technique. The nucleation of domains and subsequent expansion by domain wall motion in the FeNi layer during nanosecond-long magnetic field pulses was observed in the… ▽ More The dynamics of magnetic domain wall motion in the FeNi layer of a FeNi/Al2O3/Co trilayer has been investigated by a combination of x-ray magnetic circular dichroism, photoelectron emission microscopy, and a stroboscopic pump-probe technique. The nucleation of domains and subsequent expansion by domain wall motion in the FeNi layer during nanosecond-long magnetic field pulses was observed in the viscous regime up to the Walker limit field. We attribute an observed delay of domain expansion to the influence of the domain wall energy that acts against the domain expansion and that plays an important role when domains are small. △ Less

Submitted 7 February, 2006; originally announced February 2006.

Comments: Accepted for publication in Physical Review Letters

Magnetic relaxation of exchange biased (Pt/Co) multilayers studied by time-resolved Kerr microscopy

Authors: Fabien Romanens, Stefania Pizzini, Fabiano Yokaichiya, Marlio Bonfim, Yan Pennec, Julio Camarero, Jan Vogel, Jordi Sort, Flavio Garcia, Bernard Rodmacq, Bernard Dieny

Abstract: Magnetization relaxation of exchange biased (Pt/Co)5/Pt/IrMn multilayers with perpendicular anisotropy was investigated by time-resolved Kerr microscopy. Magnetization reversal occurs by nucleation and domain wall propagation for both descending and ascending applied fields, but a much larger nucleation density is observed for the descending branch, where the field is applied antiparallel to the… ▽ More Magnetization relaxation of exchange biased (Pt/Co)5/Pt/IrMn multilayers with perpendicular anisotropy was investigated by time-resolved Kerr microscopy. Magnetization reversal occurs by nucleation and domain wall propagation for both descending and ascending applied fields, but a much larger nucleation density is observed for the descending branch, where the field is applied antiparallel to the exchange bias field direction. These results can be explained by taking into account the presence of local inhomogeneities of the exchange bias field. △ Less

Submitted 29 September, 2005; originally announced September 2005.

Comments: To appear in Physical Review B (October 2005)

Journal ref: Physical Review B 72 (2005) 134410

Influence of domain wall interactions on nanosecond switching in magnetic tunnel junctions

Authors: Jan Vogel, Wolfgang Kuch, Riccardo Hertel, Julio Camarero, Keiki Fukumoto, Fabien Romanens, Stefania Pizzini, Marlio Bonfim, Frédéric Petroff, Alain Fontaine, Jürgen Kirschner

Abstract: We have obtained microscopic evidence of the influence of domain wall stray fields on the nanosecond magnetization switching in magnetic trilayer systems. The nucleation barrier initiating the magnetic switching of the soft magnetic Fe20Ni80 layer in magnetic tunnel junction-like FeNi/Al2O3/Co trilayers is considerably lowered by stray fields generated by domain walls present in the hard magneti… ▽ More We have obtained microscopic evidence of the influence of domain wall stray fields on the nanosecond magnetization switching in magnetic trilayer systems. The nucleation barrier initiating the magnetic switching of the soft magnetic Fe20Ni80 layer in magnetic tunnel junction-like FeNi/Al2O3/Co trilayers is considerably lowered by stray fields generated by domain walls present in the hard magnetic Co layer. This internal bias field can significantly increase the local switching speed of the soft layer. The effect is visualized using nanosecond time- and layer-resolved magnetic domain imaging and confirmed by micromagnetic simulations. △ Less

Submitted 1 September, 2005; originally announced September 2005.

Comments: 5 Pages, 3 Figures. Submitted to Physical Review Letters

Journal ref: Physical Review B 72 (2005) 220402

Magnetic relaxation measurements of exchange biased (Pt/Co) multilayers with perpendicular anisotropy

Authors: Fabien Romanens, Stefania Pizzini, Jordi Sort, Flavio Garcia, Julio Camarero, Fabiano Yokaichiya, Yan Pennec, Jan Vogel, Bernard Dieny

Abstract: Magnetic relaxation measurements were carried out by magneto-optical Kerr effect on exchange biased (Pt/Co)5/Pt/FeMn multilayers with perpendicular anisotropy. In these films the coercivity and the exchange bias field vary with Pt spacer thickness, and have a maximum for 0.2 nm. Hysteresis loops do not reveal important differences between the reversal for ascending and descending fields. Relaxat… ▽ More Magnetic relaxation measurements were carried out by magneto-optical Kerr effect on exchange biased (Pt/Co)5/Pt/FeMn multilayers with perpendicular anisotropy. In these films the coercivity and the exchange bias field vary with Pt spacer thickness, and have a maximum for 0.2 nm. Hysteresis loops do not reveal important differences between the reversal for ascending and descending fields. Relaxation measurements were fitted using Fatuzzo's model, which assumes that reversal occurs by domain nucleation and domain wall propagation. For 2 nm thick Pt spacer (no exchange bias) the reversal is dominated by domain wall propagation starting from a few nucleation centers. For 0.2 nm Pt spacer (maximum exchange bias) the reversal is strongly dominated by nucleation, and no differences between the behaviour of the ascending and descending branches can be observed. For 0.4 nm Pt spacer (weaker exchange bias) the nucleation density becomes less important, and the measurements reveal a much stronger density of nucleation centers in the descending branch. △ Less

Submitted 12 May, 2005; originally announced May 2005.

Comments: Europhysical Journal B, in print DOI: 10.1140/epjb/e2005-00053-3

Journal ref: European Physical Journal B 45 (2005) 185

Interplay between magnetic anisotropy and interlayer coupling in nanosecond magnetization reversal of spin-valve trilayers

Authors: Jan Vogel, Wolfgang Kuch, Julio Camarero, Keiki Fukumoto, Yan Pennec, Stefania Pizzini, Marlio Bonfim, Frédéric Petroff, Alain Fontaine, Jürgen Kirschner

Abstract: The influence of magnetic anisotropy on nanosecond magnetization reversal in coupled FeNi/Cu/Co trilayers was studied using a photoelectron emission microscope combined with x-ray magnetic circular dicroism. In quasi-isotropic samples the reversal of the soft FeNi layer is determined by domain wall pinning that leads to the formation of small and irregular domains. In samples with uniaxial magne… ▽ More The influence of magnetic anisotropy on nanosecond magnetization reversal in coupled FeNi/Cu/Co trilayers was studied using a photoelectron emission microscope combined with x-ray magnetic circular dicroism. In quasi-isotropic samples the reversal of the soft FeNi layer is determined by domain wall pinning that leads to the formation of small and irregular domains. In samples with uniaxial magnetic anisotropy, the domains are larger and the influence of local interlayer coupling dominates the domain structure and the reversal of the FeNi layer. △ Less

Submitted 10 May, 2005; originally announced May 2005.

Journal ref: Physical Review B 71 (2005) 060404(R)