-
Low-cost sensors for indoor PV energy harvesting estimation based on machine learning
Authors:
Bastien Politi,
Alain Foucaran,
Nicolas Camara
Abstract:
With the number of communicating sensors linked to the Internet of Things (IoT) ecosystem in-creasing dramatically, well-designed indoor light energy harvesting solutions are needed. The first step towards this development is to determine the harvestable energy in real indoor environ-ments. But the harvestable energy varying over time with nature (spectra) and intensity of the light multi-sources,…
▽ More
With the number of communicating sensors linked to the Internet of Things (IoT) ecosystem in-creasing dramatically, well-designed indoor light energy harvesting solutions are needed. The first step towards this development is to determine the harvestable energy in real indoor environ-ments. But the harvestable energy varying over time with nature (spectra) and intensity of the light multi-sources, lighting data must be collected for sufficiently long periods. Besides, for a real implementation on-site, studies must be able to be carried out simultaneously in several places to determine locations with the highest energy harvesting potential. In this context, this manuscript presents a very low-cost prototype based on commercial photodiodes (rather than very expensive spectrometers), which measures only a very rudimentary number of spectral data. Thanks to a classification supervised machine learning from Matlab, in which an algorithm learns to classify new observations, and thanks to a simple principle of the superposition approximation model de-veloped for flexible GaAs solar cells, our harvestable energy estimation error is less than 5 percents after more than 2 weeks of observation. To measure this error, the data collected leading to an estimate of the harvestable energy is compared to what has been experimentally harvested in a real IoT system Li-ion battery and compared to what has been estimated using an expensive spectrometer during the same period. Our prototype should allow the development and the massive deploy-ment of a new generation of low cost indoor light energy harvesting sensors for future reliable indoor energy harvesters.
△ Less
Submitted 28 December, 2021;
originally announced January 2022.
-
Practical PV energy harvesting under real indoor lighting conditions
Authors:
Bastien Politi,
Stephanie Parola,
Antoine Gademer,
Diane Pegart,
Marie Piquemil,
Alain Foucaran,
Nicolas Camara
Abstract:
Indoor light is known to be a new energy source to power uW low consumption wireless sensor networks (WSNs). For wireless electronic devices that consume tens of mW, it is still challenging to harvest this amount of power in a low light indoor environment. The challenge comes from the fact that the irradiance is low, as well the fact that the source is a multi-spectral direct, reflective, and scat…
▽ More
Indoor light is known to be a new energy source to power uW low consumption wireless sensor networks (WSNs). For wireless electronic devices that consume tens of mW, it is still challenging to harvest this amount of power in a low light indoor environment. The challenge comes from the fact that the irradiance is low, as well the fact that the source is a multi-spectral direct, reflective, and scattered mix of artificial and natural light, with intensity and composition varying in time. This article describes a method providing an evaluation of the potentially harvestable energy in real light environments. Measurements of indoor light spectral composition in real condition and optoelectrical characteristics of photovoltaic converters in a controlled environment are base on the method s calculation model. Real harvester prototypes based on GaAs commercial photovoltaic cells and power management integrated circuit, powering a commercial wireless e-ink display, have been conceived to compare with the model calculations. For two days of experimentation, model calculations achieve a mean absolute percentage error (MAPE) of 2 percents and 6 percents for Day 1 and Day 2, respectively. A method within this accuracy range would be a helpful tool to assist in designing light energy harvesting systems in such ways that they can be best tailored to the indoor lighting conditions to which they will be exposed.
△ Less
Submitted 5 May, 2021; v1 submitted 28 November, 2020;
originally announced November 2020.
-
Raman spectrum and optical extinction of graphene buffer layers on the Si-face of 6H-SiC
Authors:
A. Tiberj,
J. R. Huntzinger,
N. Camara,
P. Godignon,
J. Camassel
Abstract:
The buffer layer has been analysed by combined micro-Raman and micro-transmission experiments. The epitaxial graphene growth on the (0001) Si face of 6H-SiC substrates was tuned to get a mixed surface at the early stage of graphitization with i) bare SiC, ii) buffer layer and iii) in some localized areas small monolayers flakes on top of the buffer layer. These unique samples enabled to measure th…
▽ More
The buffer layer has been analysed by combined micro-Raman and micro-transmission experiments. The epitaxial graphene growth on the (0001) Si face of 6H-SiC substrates was tuned to get a mixed surface at the early stage of graphitization with i) bare SiC, ii) buffer layer and iii) in some localized areas small monolayers flakes on top of the buffer layer. These unique samples enabled to measure the Raman spectrum of the buffer layer (close to the Raman spectrum of a carbon layer with a significant percentage of sp3 bonds) and its corresponding relative extinction at 514.5 nm. The Raman spectrum of the buffer layer remains visible after the growth of one monolayer on top but, despite the relatively low absorption coefficient of graphene, the Raman intensity is strongly reduced (typically divided by 3). The buffer layer background will bias usual evaluations of the domain sizes based on the D/G integrated intensities ratio. Finally, several Raman maps show the excellent thickness uniformity and crystalline quality of the graphene monolayers and that they are subjected to a non uniform compressive strain with values comprised between -0.60% and -0.42%.
△ Less
Submitted 5 December, 2012;
originally announced December 2012.
-
Optical nano-imaging of gate-tuneable graphene plasmons
Authors:
Jianing Chen,
Michela Badioli,
Pablo Alonso-González,
Suko Thongrattanasiri,
Florian Huth,
Johann Osmond,
Marko Spasenovic,
Alba Centeno,
Amaia Pesquera,
Philippe Godignon,
Amaia Zurutuza,
Nicolas Camara,
Javier Garcia de Abajo,
Rainer Hillenbrand,
Frank Koppens
Abstract:
The ability to manipulate optical fields and the energy flow of light is central to modern information and communication technologies, as well as quantum information processing schemes. However, as photons do not possess charge, controlling them efficiently by electrical means has so far proved elusive. A promising way to achieve electric control of light could be through plasmon polaritons - coup…
▽ More
The ability to manipulate optical fields and the energy flow of light is central to modern information and communication technologies, as well as quantum information processing schemes. However, as photons do not possess charge, controlling them efficiently by electrical means has so far proved elusive. A promising way to achieve electric control of light could be through plasmon polaritons - coupled excitations of photons and charge carriers - in graphene. In this two-dimensional sheet of carbon atoms, it is expected that plasmon polaritons and their associated optical fields can be readily tuned electrically by varying the graphene carrier density. While optical graphene plasmon resonances have recently been investigated spectroscopically, no experiments so far have directly resolved propagating plasmons in real space. Here, we launch and detect propagating optical plasmons in tapered graphene nanostructures using near-field scattering microscopy with infrared excitation light. We provide real-space images of plasmonic field profiles and find that the extracted plasmon wavelength is remarkably short - over 40 times smaller than the wavelength of illumination. We exploit this strong optical field confinement to turn a graphene nanostructure into a tunable resonant plasmonic cavity with extremely small mode volume. The cavity resonance is controlled in-situ by gating the graphene, and in particular, complete switching on and off of the plasmon modes is demonstrated, thus paving the way towards graphene-based optical transistors. This successful alliance between nanoelectronics and nano-optics enables the development of unprecedented active subwavelength-scale optics and a plethora of novel nano-optoelectronic devices and functionalities, such as tunable metamaterials, nanoscale optical processing and strongly enhanced light-matter interactions for quantum devices and (bio)sensors.
△ Less
Submitted 26 February, 2012; v1 submitted 22 February, 2012;
originally announced February 2012.
-
Bottom-gated epitaxial graphene suitable for half-integer quantum metrology ?
Authors:
B. Jouault,
N. Camara,
B. Jabakhanji,
A. Caboni,
C. Consejo,
P. Godignon,
D. K. Maude,
J. Camassel
Abstract:
We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal, 200 nm below the surface, and works well at intermediate temperatures: 40K-80K. The Dirac point is observed at moderate gate voltages (1-20V) depending upon the…
▽ More
We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal, 200 nm below the surface, and works well at intermediate temperatures: 40K-80K. The Dirac point is observed at moderate gate voltages (1-20V) depending upon the surface preparation. For temperatures below 40K, the gate is inefficient as the buried channel is frozen out. However, the carrier concentration in graphene remains very close to the value set at T\sim 40K. The absence of parallel conduction is evidenced by the observation of the half-integer quantum Hall effect at various concentrations at T\sim 4K. These observations pave the way to a better understanding of intrinsic properties of epitaxial graphene and are promising for applications such as quantum metrology.
△ Less
Submitted 13 July, 2011; v1 submitted 29 June, 2011;
originally announced June 2011.
-
Interplay between interferences and electron-electron interactions in epitaxial graphene
Authors:
B. Jouault,
B. Jabakhanji,
N. Camara,
W. Desrat,
C. Consejo,
J. Camassel
Abstract:
We separate localization and interaction effects in epitaxial graphene devices grown on the C-face of a 4H-SiC substrate by analyzing the low temperature conductivities. Weak localization and antilocalization are extracted at low magnetic fields, after elimination of a geometric magnetoresistance and subtraction of the magnetic field dependent Drude conductivity. The electron electron interaction…
▽ More
We separate localization and interaction effects in epitaxial graphene devices grown on the C-face of a 4H-SiC substrate by analyzing the low temperature conductivities. Weak localization and antilocalization are extracted at low magnetic fields, after elimination of a geometric magnetoresistance and subtraction of the magnetic field dependent Drude conductivity. The electron electron interaction correction is extracted at higher magnetic fields, where localization effects disappear. Both phenomena are weak but sizable and of the same order of magnitude. If compared to graphene on silicon dioxide, electron electron interaction on epitaxial graphene are not significantly reduced by the larger dielectric constant of the SiC substrate.
△ Less
Submitted 28 April, 2011; v1 submitted 7 April, 2011;
originally announced April 2011.
-
Growth of monolayer graphene on 8deg off-axis 4H-SiC (000-1) substrates with application to quantum transport devices
Authors:
N. Camara,
B. Jouault,
A. Caboni,
B. Jabakhanji,
W. Desrat,
E. Pausas,
C. Consejo,
N. Mestres,
P. Godignon,
J. Camassel
Abstract:
Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. We find a moderate p-type do**, high carrier…
▽ More
Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. We find a moderate p-type do**, high carrier mobility and half integer Quantum Hall effect typical of high quality graphene samples. This opens the way to a fully compatible integration of graphene with SiC devices on the wafers that constitute the standard in today's SiC industry.
△ Less
Submitted 18 July, 2010;
originally announced July 2010.
-
Investigation of Long Monolayer Graphene Ribbons grown on Graphite Capped 6H-SiC (000-1)
Authors:
N. Camara,
G. Rius,
J-R. Huntzinger,
A. Tiberj,
N. Mestres,
F. Perez-Murano,
P. Godignon,
J. Camassel
Abstract:
We present an investigation of large, isolated, graphene ribbons grown on the C-face of on-axis semi-insulating 6H-SiC wafers. Using a graphite cap to cover the SiC sample, we modify the desorption of the Si species during the Si sublimation process. This results in a better control of the growth kinetics, yielding very long (about 300 microns long, 5 microns wide), homogeneous monolayer graphen…
▽ More
We present an investigation of large, isolated, graphene ribbons grown on the C-face of on-axis semi-insulating 6H-SiC wafers. Using a graphite cap to cover the SiC sample, we modify the desorption of the Si species during the Si sublimation process. This results in a better control of the growth kinetics, yielding very long (about 300 microns long, 5 microns wide), homogeneous monolayer graphene ribbons. These ribbons fully occupy unusually large terraces on the step bunched SiC surface, as shown by AFM, optical microscopy and SEM. Raman spectrometry indicates that the thermal stress has been partially relaxed by wrinkles formation, visible in AFM images. In addition, we show that despite the low optical absorption of graphene, optical differential transmission can be successfully used to prove the monolayer character of the ribbons.
△ Less
Submitted 27 February, 2009; v1 submitted 23 December, 2008;
originally announced December 2008.
-
Early stage formation of graphene on the C-face of 6H-SiC
Authors:
N. Camara,
G. Rius,
J. -R. Huntzinger,
A. Tiberj,
L. Magaud,
N. Mestres,
P. Godignon,
J. Camassel
Abstract:
An investigation of the early stage formation of graphene on the C-face of 6H-SiC is presented. We show that the sublimation of few atomic layers of Si out of the SiC substrate is not homogeneous. In good agreement with the results of theoretical calculations it starts from defective sites, mainly dislocations that define nearly circular flakes, which have a pyramidal, volcano-like, shape with a…
▽ More
An investigation of the early stage formation of graphene on the C-face of 6H-SiC is presented. We show that the sublimation of few atomic layers of Si out of the SiC substrate is not homogeneous. In good agreement with the results of theoretical calculations it starts from defective sites, mainly dislocations that define nearly circular flakes, which have a pyramidal, volcano-like, shape with a center chimney where the original defect was located. At higher temperatures, complete conversion occurs but, again, it is not homogeneous. Within the sample surface the intensity of the Raman G and 2D bands, evidences non-homogeneous thickness.
△ Less
Submitted 15 December, 2008; v1 submitted 27 October, 2008;
originally announced October 2008.
-
Selective epitaxial growth of graphene on SiC
Authors:
N. Camara,
G. Rius,
J. -R. Huntzinger,
A. Tiberj,
N. Mestres,
P. Godignon,
J. Camassel
Abstract:
We present an innovative method of selective epitaxial growth of few layers graphene (FLG) on a pre-patterned SiC substrate. The methods involves, successively, the sputtering of a thin AlN layer on top of a mono-crystalline SiC substrate and, then, patterning it with e-beam lithography (EBL) and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through t…
▽ More
We present an innovative method of selective epitaxial growth of few layers graphene (FLG) on a pre-patterned SiC substrate. The methods involves, successively, the sputtering of a thin AlN layer on top of a mono-crystalline SiC substrate and, then, patterning it with e-beam lithography (EBL) and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at ~1582 cm-1 in the AlN-free areas is used to validate the concept, it gives absolute evidence of the selective FLG growth.
△ Less
Submitted 2 July, 2008; v1 submitted 25 June, 2008;
originally announced June 2008.
