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Split Ga vacancies and the unusually strong anisotropy of positron annihilation spectra in $\boldsymbolβ$-Ga$_2$O$_3$
Authors:
Antti Karjalainen,
Vera Prozheeva,
Kristoffer Simula,
Ilja Makkonen,
Vincent Callewaert,
Joel B. Varley,
Filip Tuomisto
Abstract:
We report a systematic first principles study on positron annihilation parameters in the $β$-Ga$_2$O$_3$ lattice and Ga mono-vacancy defects complemented with orientation-dependent experiments of the Doppler broadening of the positron-electron annihilation. We find that both the $β$-Ga$_2$O$_3$ lattice and the considered defects exhibit unusually strong anisotropy in their Doppler broadening signa…
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We report a systematic first principles study on positron annihilation parameters in the $β$-Ga$_2$O$_3$ lattice and Ga mono-vacancy defects complemented with orientation-dependent experiments of the Doppler broadening of the positron-electron annihilation. We find that both the $β$-Ga$_2$O$_3$ lattice and the considered defects exhibit unusually strong anisotropy in their Doppler broadening signals. This anisotropy is associated with low symmetry of the $β$-Ga$_2$O$_3$ crystal structure that leads to unusual kind of one-dimensional confinement of positrons even in the delocalized state in the lattice. In particular, the split Ga vacancies recently observed by scanning transmission electron microscopy produce unusually anisotropic positron annihilation signals. We show that in experiments, the positron annihilation signals in $β$-Ga$_2$O$_3$ samples seem to be often dominated by split Ga vacancies.
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Submitted 4 November, 2020; v1 submitted 13 May, 2020;
originally announced May 2020.
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Nature of the positron state in CdSe quantum dots
Authors:
Wenqin Shi,
Vincent Callewaert,
Bernardo Barbiellini,
Rolando Saniz,
Maik Butterling,
Werner Egger,
Marcel Dickmann,
Christoph Hugenschmidt,
Behtash Shakeri,
Robert W. Meulenberg,
Ekkes Brück,
Bart Partoens,
Arun Bansil,
Stephan W. H. Eijt
Abstract:
Previous studies have shown that positron-annihilation spectroscopy is a highly sensitive probe of the electronic structure and surface composition of ligand-capped semiconductor Quantum Dots (QDs) embedded in thin films. Nature of the associated positron state, however, whether the positron is confined inside the QDs or localized at their surfaces, has so far remained unresolved. Our positron-ann…
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Previous studies have shown that positron-annihilation spectroscopy is a highly sensitive probe of the electronic structure and surface composition of ligand-capped semiconductor Quantum Dots (QDs) embedded in thin films. Nature of the associated positron state, however, whether the positron is confined inside the QDs or localized at their surfaces, has so far remained unresolved. Our positron-annihilation lifetime spectroscopy (PALS) studies of CdSe QDs reveal the presence of a strong lifetime component in the narrow range of 358-371 ps, indicating abundant trap** and annihilation of positrons at the surfaces of the QDs. Furthermore, our ab-initio calculations of the positron wave function and lifetime employing a recent formulation of the Weighted Density Approximation (WDA) demonstrate the presence of a positron surface state and predict positron lifetimes close to experimental values. Our study thus resolves the longstanding question regarding the nature of the positron state in semiconductor QDs, and opens the way to extract quantitative information on surface composition and ligand-surface interactions of colloidal semiconductor QDs through highly sensitive positron-annihilation techniques.
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Submitted 15 August, 2018;
originally announced August 2018.
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Direct observation of electron emission as a result of a VVV Auger transition in the valence band of Graphene
Authors:
V. A. Chirayath,
V. Callewaert,
M. D. Chrysler,
A. J. Fairchild,
R. W. Gladen,
A. D. Mcdonald,
S. K. Imam,
K. Shastry,
A. R. Koymen,
R. Saniz,
B. Barbiellini,
K. Rajeshwar,
B. Partoens,
A. H. Weiss
Abstract:
We report the first direct observation of electron emission into the vacuum as a result of a VVV Auger transition resulting from the relaxation of a deep hole in the valence band. A beam of low energy (<1.25eV) positrons was used to deposit positrons onto the surface of samples consisting of single layer graphene, multi-layer graphene and graphite. The distribution of electrons emitted from the sa…
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We report the first direct observation of electron emission into the vacuum as a result of a VVV Auger transition resulting from the relaxation of a deep hole in the valence band. A beam of low energy (<1.25eV) positrons was used to deposit positrons onto the surface of samples consisting of single layer graphene, multi-layer graphene and graphite. The distribution of electrons emitted from the samples as a result of the annihilation of the positron showed peak extending up to ~12 eV with a maximum at ~4eV. The observed peak was ~17 times larger than the previously observed annihilation induced C KVV peak. An analysis based upon a density functional theory calculation of the positron annihilation rates indicates that the width and intensity of the peak is consistent with electron emission resulting from VVV Auger transition excited by the annihilation of valence band electrons. Good agreement was found between the data from the single layer graphene on Cu surface with a theoretical line shape found from a self-folding of the density of states for a free standing graphene layer. The agreement between the theoretical and measured intensities for the KVV and VVV transitions indicates that the branching ratio for holes to decay via an Auger transition is nearly the same in both cases (i.e. close to 100%). Our results suggest the possibility of using annihilation induced VVV Auger spectroscopy to study the properties of the local density of states and the hole decay processes in materials in which the valence band width exceeds the work function.
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Submitted 4 November, 2016; v1 submitted 29 October, 2016;
originally announced October 2016.
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Positron surface state as a spectroscopic probe for characterizing surfaces of topological insulator materials
Authors:
Vincent Callewaert,
K. Shastry,
Rolando Saniz,
Ilja Makkonen,
Bernardo Barbiellini,
Badih A. Assaf,
Donald Heiman,
Jagadeesh S. Moodera,
Bart Partoens,
Arun Bansil,
A. H. Weiss
Abstract:
Topological insulators are attracting considerable interest due to their potential for technological applications and as platforms for exploring wide-ranging fundamental science questions. In order to exploit, fine-tune, control and manipulate the topological surface states, spectroscopic tools which can effectively probe their properties are of key importance. Here, we demonstrate that positrons…
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Topological insulators are attracting considerable interest due to their potential for technological applications and as platforms for exploring wide-ranging fundamental science questions. In order to exploit, fine-tune, control and manipulate the topological surface states, spectroscopic tools which can effectively probe their properties are of key importance. Here, we demonstrate that positrons provide a sensitive probe for topological states, and that the associated annihilation spectrum provides a new technique for characterizing these states. Firm experimental evidence for the existence of a positron surface state near Bi$_2$Te$_2$Se with a binding energy of $E_b = 2.7 \pm 0.2 \, \text{eV}$ is presented, and is confirmed by first-principles calculations. Additionally, the simulations predict a significant signal originating from annihilation with the topological surface states and shows the feasibility to detect their spin-texture through the use of spin-polarized positron beams.
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Submitted 8 September, 2016; v1 submitted 21 May, 2016;
originally announced May 2016.
