-
Portable magnetometry for detection of biomagnetism in ambient environments
Authors:
M. E. Limes,
E. L. Foley,
T. W. Kornack,
S. Caliga,
S. McBride,
A. Braun,
W. Lee,
V. G. Lucivero,
M. V. Romalis
Abstract:
We present a method of optical magnetometry with parts-per-billion resolution that is able to detect biomagnetic signals generated from the human brain and heart in Earth's ambient environment. Our magnetically silent sensors measure the total magnetic field by detecting the free-precession frequency of highly spin-polarized alkali metal vapor. A first-order gradiometer is formed from two magnetom…
▽ More
We present a method of optical magnetometry with parts-per-billion resolution that is able to detect biomagnetic signals generated from the human brain and heart in Earth's ambient environment. Our magnetically silent sensors measure the total magnetic field by detecting the free-precession frequency of highly spin-polarized alkali metal vapor. A first-order gradiometer is formed from two magnetometers that are separated by a 3 cm baseline. Our gradiometer operates from a laptop consuming 5 W over a USB port, enabled by state-of-the-art micro-fabricated alkali vapor cells, advanced thermal insulation, custom electronics, and laser packages within the sensor head. The gradiometer obtains a sensitivity of 16 fT/cm/Hz$^{1/2}$ outdoors, which we use to detect neuronal electrical currents and magnetic cardiography signals. Recording of neuronal magnetic fields is one of a few available methods for non-invasive functional brain imaging that usually requires extensive magnetic shielding and other infractructure. This work demonstrates the possibility of a dense array of portable biomagnetic sensors that are deployable in a variety of natural environments.
△ Less
Submitted 1 June, 2020; v1 submitted 7 January, 2020;
originally announced January 2020.
-
Experimental demonstration of an atomtronic battery
Authors:
Seth C. Caliga,
Cameron J. E. Straatsma,
Dana Z. Anderson
Abstract:
Operation of an atomtronic battery is demonstrated where a finite-temperature Bose-Einstein condensate stored in one half of a double-well potential is coupled to an initially empty load well that is impedance matched by a resonant terminator beam. The atom number and temperature of the condensate are monitored during the discharge cycle, and are used to calculate fundamental properties of the bat…
▽ More
Operation of an atomtronic battery is demonstrated where a finite-temperature Bose-Einstein condensate stored in one half of a double-well potential is coupled to an initially empty load well that is impedance matched by a resonant terminator beam. The atom number and temperature of the condensate are monitored during the discharge cycle, and are used to calculate fundamental properties of the battery. The discharge behavior is analyzed according to a Thévenin equivalent circuit that contains a finite internal resistance to account for dissipation in the battery. Battery performance at multiple discharge rates is characterized by the peak power output, and the current and energy capacities of the system.
△ Less
Submitted 23 January, 2017;
originally announced January 2017.
-
Transport dynamics of ultracold atoms in a triple-well transistor-like potential
Authors:
Seth C. Caliga,
Cameron J. E. Straatsma,
Dana Z. Anderson
Abstract:
The transport of atoms is experimentally studied in a transistor-like triple-well potential consisting of a narrow gate well surrounded by source and drain wells. Atoms are initially loaded into the source well with pre-determined temperature and chemical potential. Energetic atoms flow from the source, across the gate, and into the drain where they are removed using a resonant light beam. The man…
▽ More
The transport of atoms is experimentally studied in a transistor-like triple-well potential consisting of a narrow gate well surrounded by source and drain wells. Atoms are initially loaded into the source well with pre-determined temperature and chemical potential. Energetic atoms flow from the source, across the gate, and into the drain where they are removed using a resonant light beam. The manifestation of atom-atom interactions and dissipation is evidenced by a rapid population growth in the initially vacant gate well. The transport dynamics are shown to depend strongly on a feedback parameter determined by the relative heights of the two barriers forming the gate region. For a range of feedback parameter values, experiments establish that the gate atoms develop a larger chemical potential and lower temperature than those in the source.
△ Less
Submitted 19 January, 2016;
originally announced January 2016.
-
Principles of an atomtronic transistor
Authors:
Seth C. Caliga,
Cameron J. E. Straatsma,
Alex A. Zozulya,
Dana Z. Anderson
Abstract:
A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain well. In steady-state, the gate well located between the source and drain is shown to acquire a well-defined chemical potential and temperature, which are controlle…
▽ More
A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain well. In steady-state, the gate well located between the source and drain is shown to acquire a well-defined chemical potential and temperature, which are controlled by the relative height of the barriers separating the three wells. It is shown that the gate chemical potential can exceed that of the source and have a lower temperature. In electronics terminology, the source-gate junction can be reverse-biased. As a result, the device exhibits regimes of negative resistance and transresistance, indicating the presence of gain. Given an external current input to the gate, transistor-like behavior is characterized both in terms of the current gain, which can be greater than unity, and the power output of the device.
△ Less
Submitted 14 December, 2015;
originally announced December 2015.
-
High-Resolution Imaging and Optical Control of Bose-Einstein Condensates in an Atom Chip Magnetic Trap
Authors:
Evan A. Salim,
Seth C. Caliga,
Jonathan B. Pfeiffer,
Dana Z. Anderson
Abstract:
A high-resolution projection and imaging system for ultracold atoms is implemented using a compound silicon and glass atom chip. The atom chip is metalized to enable magnetic trap** while glass regions enable high numerical aperture optical access to atoms residing in the magnetic trap about 100 microns below the chip surface. The atom chip serves as a wall of the vacuum system, which enables th…
▽ More
A high-resolution projection and imaging system for ultracold atoms is implemented using a compound silicon and glass atom chip. The atom chip is metalized to enable magnetic trap** while glass regions enable high numerical aperture optical access to atoms residing in the magnetic trap about 100 microns below the chip surface. The atom chip serves as a wall of the vacuum system, which enables the use of commercial microscope components for projection and imaging. Holographically generated light patterns are used to optically slice a cigar-shaped magnetic trap into separate regions; this has been used to simultaneously generate up to four Bose-condensates. Using fluorescence techniques we have demonstrated in-trap imaging resolution down to 2.5 microns
△ Less
Submitted 23 August, 2012;
originally announced August 2012.
-
A Matterwave Transistor Oscillator
Authors:
Seth C. Caliga,
Cameron J. E. Straatsma,
Alex A. Zozulya,
Dana Z. Anderson
Abstract:
An atomtronic transistor circuit is used to realize a driven matterwave oscillator. The transistor consists of Source and Drain regions separated by a narrow Gate well. Quasi-steady-state behavior is determined from a thermodynamic model, which reveals two oscillation threshold regimes. One is due to the onset of Bose-Einstein condensation in the Gate well, the other is due to the appearance of a…
▽ More
An atomtronic transistor circuit is used to realize a driven matterwave oscillator. The transistor consists of Source and Drain regions separated by a narrow Gate well. Quasi-steady-state behavior is determined from a thermodynamic model, which reveals two oscillation threshold regimes. One is due to the onset of Bose-Einstein condensation in the Gate well, the other is due to the appearance of a negative transresistance regime of the transistor. The thresholds of oscillation are shown to be primarily dependent on the potential energy height difference between Gate-Drain and Gate-Source barriers. The transistor potential is established with a combination of magnetic and optical fields using a compound glass and silicon substrate atom chip. The onset of oscillation and the output matterwave are observed through in-trap imaging. Time-of-flight absorption imaging is used to determine the time dependence of the Source well thermal and chemical energies as well as to estimate the value of the closed-loop ohmic Gate resistance, which is negative and is observed to cause cooling of Source atoms.
△ Less
Submitted 13 September, 2013; v1 submitted 15 August, 2012;
originally announced August 2012.
