Showing 1–2 of 2 results for author: Calhoun, M F

Electronic functionalization of the surface of organic semiconductors with self-assembled monolayers

Authors: M. F. Calhoun, J. Sanchez, D. Olaya, M. E. Gershenson, V. Podzorov*

Abstract: Molecular self-assembly has been extensively used for surface modification of metals and oxides for a variety of applications, including molecular and organic electronics. One of the goals of this research is to learn how the electronic properties of these surfaces can be modified by self-assembled monolayers (SAM). Here, we demonstrate a new type of molecular self-assembly: the growth of organo… ▽ More Molecular self-assembly has been extensively used for surface modification of metals and oxides for a variety of applications, including molecular and organic electronics. One of the goals of this research is to learn how the electronic properties of these surfaces can be modified by self-assembled monolayers (SAM). Here, we demonstrate a new type of molecular self-assembly: the growth of organosilane SAMs at the surface of organic semiconductors, which results in a dramatic increase of the surface conductivity of organic materials. For organosilane molecules with a large dipole moment, SAM-induced surface conductivity of organic molecular crystals approaches 10^-5 S per square, which is comparable to the highest conductivity realized in organic field-effect transistors (OFETs) at ultra-high densities of charge carriers. SAM-functionalized organic surfaces are fully accessible to the environment which makes them very attractive for sensing applications. We have observed that the interaction of vapors of polar molecules with SAM-functionalized organic semiconductors results in a fast and reversible change of the conductivity, proportional to the pressure of an analyte vapor. △ Less

Submitted 9 October, 2007; originally announced October 2007.

Effect of shallow traps on polaron transport at the surface of organic semiconductors

Authors: M. F. Calhoun, C. Hsieh, V. Podzorov

Abstract: The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap dominated p-type organic field-effect transistors (OFETs) has been investigated. It has been observed that the transfer of electrons into the dielectric results in a decrease of the field-effect mobility of polarons, suggesting that additional shallow traps are generated in the conduction channel.… ▽ More The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap dominated p-type organic field-effect transistors (OFETs) has been investigated. It has been observed that the transfer of electrons into the dielectric results in a decrease of the field-effect mobility of polarons, suggesting that additional shallow traps are generated in the conduction channel. Using this effect, the dependence of the field-effect mobility on the density of shallow traps, mu(N), has been measured, which allowed to estimate the average polaron trap** time, tau_tr = 50 +- 10 ps, and the density of shallow traps, N_0 = (3 +- 0.5)*10^11 cm^-2, in the channel of single-crystal tetracene devices. △ Less

Submitted 30 October, 2006; originally announced October 2006.