Experimental Demonstration of a Reconfigurable Coupled Oscillator Platform to Solve the Max-Cut Problem
Authors:
Mohammad Khairul Bashar,
Antik Mallick,
Daniel S Truesdell,
Benton H. Calhoun,
Siddharth Joshi,
Nikhil Shukla
Abstract:
In this work, we experimentally demonstrate an integrated circuit (IC) of 30 relaxation oscillators with reconfigurable capacitive coupling to solve the NP-Hard Maximum Cut (Max-Cut) problem. We show that under the influence of an external second-harmonic injection signal, the oscillator phases exhibit a bi-partition which can be used to calculate a high quality approximate Max-Cut solution. Lever…
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In this work, we experimentally demonstrate an integrated circuit (IC) of 30 relaxation oscillators with reconfigurable capacitive coupling to solve the NP-Hard Maximum Cut (Max-Cut) problem. We show that under the influence of an external second-harmonic injection signal, the oscillator phases exhibit a bi-partition which can be used to calculate a high quality approximate Max-Cut solution. Leveraging the all-to-all reconfigurable coupling architecture, we experimentally evaluate the computational properties of the oscillators using randomly generated graph instances of varying size and edge density . Further, comparing the Max-Cut solutions with the optimal values, we show that the oscillators (after simple post-processing) produce a Max-Cut that is within 99% of the optimal value in 28 of the 36 measured graphs; importantly, the oscillators are particularly effective in dense graphs with the Max-Cut being optimal in seven out of nine measured graphs with edge density 0.8. Our work marks a step towards creating an efficient, room-temperature-compatible non-Boolean hardware-based solver for hard combinatorial optimization problems.
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Submitted 12 October, 2020; v1 submitted 10 August, 2020;
originally announced August 2020.
Modeling tunnel field effect transistors - from interface chemistry to non-idealities to circuit level performance
Authors:
Sheikh Z. Ahmed,
Yaohua Tan,
Daniel S. Truesdell,
Benton H. Calhoun,
Avik W. Ghosh
Abstract:
We present a quasi-analytical model for Tunnel Field Effect Transistors (TFETs) that includes the microscopic physics and chemistry of interfaces and non-idealities. The ballistic band-to-band tunneling current is calculated by modifying the well known Simmons equation for oxide tunneling, where we integrate the Wentzel-Kramers-Brillouin (WKB) tunneling current over the transverse modes. We extend…
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We present a quasi-analytical model for Tunnel Field Effect Transistors (TFETs) that includes the microscopic physics and chemistry of interfaces and non-idealities. The ballistic band-to-band tunneling current is calculated by modifying the well known Simmons equation for oxide tunneling, where we integrate the Wentzel-Kramers-Brillouin (WKB) tunneling current over the transverse modes. We extend the Simmons equation to finite temperature and non-rectangular barriers using a two-band model for the channel material and an analytical channel potential profile obtained from Poisson's equation. The two-band model is parametrized first principles by calibrating with hybrid Density Functional Theory calculations, and extended to random alloys with a band unfolding technique. Our quasi-analytical model shows quantitative agreement with ballistic quantum transport calculations. On top of the ballistic tunnel current we incorporate higher order processes arising at junctions coupling the bands, specifically interface trap-assisted tunneling and Auger generation processes. Our results suggest that both processes significantly impact the off-state characteristics of the TFETs - Auger in particular being present even for perfect interfaces. We show that our microscopic model can be used to quantify the TFET performance on the atomistic interface quality. Finally, we use our simulations to quantify circuit level metrics such as energy consumption.
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Submitted 19 June, 2018; v1 submitted 16 June, 2018;
originally announced June 2018.
