Showing 1–50 of 65 results for author: Calderón, M J

Logistic Map Pseudo Random Number Generator in FPGA

Authors: Mateo Jalen Andrew Calderon, Lee Jun Lei Lucas, Syarifuddin Azhar Bin Rosli, Stephanie See Hui Ying, Jarell Lim En Yu, Maoyang Xiang, T. Hui Teo

Abstract: This project develops a pseudo-random number generator (PRNG) using the logistic map, implemented in Verilog HDL on an FPGA and processes its output through a Central Limit Theorem (CLT) function to achieve a Gaussian distribution. The system integrates additional FPGA modules for real-time interaction and visualisation, including a clock generator, UART interface, XADC, and a 7-segment display dr… ▽ More This project develops a pseudo-random number generator (PRNG) using the logistic map, implemented in Verilog HDL on an FPGA and processes its output through a Central Limit Theorem (CLT) function to achieve a Gaussian distribution. The system integrates additional FPGA modules for real-time interaction and visualisation, including a clock generator, UART interface, XADC, and a 7-segment display driver. These components facilitate the direct display of PRNG values on the FPGA and the transmission of data to a laptop for histogram analysis, verifying the Gaussian nature of the output. This approach demonstrates the practical application of chaotic systems for generating Gaussian-distributed pseudo-random numbers in digital hardware, highlighting the logistic map's potential in PRNG design. △ Less

Submitted 30 April, 2024; originally announced April 2024.

Comments: 10 pages, 6 figures

High-Harmonic Generation with a twist: all-optical characterization of magic-angle twisted bilayer graphene

Authors: Eduardo B. Molinero, Anushree Datta, María J. Calderón, Elena Bascones, Rui E. F. Silva

Abstract: If we stack up two layers of graphene while changing their respective orientation by some twisting angle, we end up with a system that has striking differences when compared to single-layer graphene. For a very specific value of this twist angle, known as magic angle, twisted bilayer graphene displays a unique phase diagram that cannot be found in other systems. Recently, high harmonic generation… ▽ More If we stack up two layers of graphene while changing their respective orientation by some twisting angle, we end up with a system that has striking differences when compared to single-layer graphene. For a very specific value of this twist angle, known as magic angle, twisted bilayer graphene displays a unique phase diagram that cannot be found in other systems. Recently, high harmonic generation spectroscopy has been successfully applied to elucidate the electronic properties of quantum materials. The purpose of the present work is to exploit the nonlinear optical response of magic-angle twisted bilayer graphene to unveil its electronic properties. We show that the band structure of magic-angle twisted bilayer graphene is imprinted onto its high-harmonic spectrum. Specifically, we observe a drastic decrease of harmonic signal as we approach the magic angle. Our results show that high harmonic generation can be used as a spectroscopy tool for measuring the twist angle and also the electronic properties of twisted bilayer graphene, paving the way for an all-optical characterization of moiré materials. △ Less

Submitted 5 February, 2023; originally announced February 2023.

Comments: 5 pages, 4 figures

Heavy quasiparticles and cascades without symmetry breaking in twisted bilayer graphene

Authors: Anushree Datta, M. J. Calderón, A. Camjayi, E. Bascones

Abstract: Among the variety of correlated states exhibited by twisted bilayer graphene, cascades in the spectroscopic properties and in the electronic compressibility occur over larger ranges of energy, twist angle and temperature compared to other effects. This suggests a hierarchy of phenomena. Using combined dynamical mean-field theory and Hartree calculations, we show that the spectral weight reorganisa… ▽ More Among the variety of correlated states exhibited by twisted bilayer graphene, cascades in the spectroscopic properties and in the electronic compressibility occur over larger ranges of energy, twist angle and temperature compared to other effects. This suggests a hierarchy of phenomena. Using combined dynamical mean-field theory and Hartree calculations, we show that the spectral weight reorganisation associated with the formation of local moments and heavy quasiparticles can explain the cascade of electronic resets without invoking symmetry breaking orders. The phenomena reproduced here include the cascade flow of spectral weight, the oscillations of remote band energies, and the asymmetric jumps of the inverse compressibility. We also predict a strong momentum differentiation in the incoherent spectral weight associated with the fragile topology of twisted bilayer graphene. △ Less

Submitted 27 August, 2023; v1 submitted 30 January, 2023; originally announced January 2023.

Comments: 10 pages including 3 multiple figs and references, plus 5 pages with 8 extended data figs

Journal ref: Nature Communications 14, 5036 (2023)

Twisted bilayered graphenes at magic angles and Casimir interactions: correlation-driven effects

Authors: Pablo Rodriguez-Lopez, Dai-Nam Le, María J. Calderón, Elena Bascones, Lilia M. Woods

Abstract: Twisted bilayered graphenes at magic angles are systems housing long ranged periodicity of Moiré pattern together with short ranged periodicity associated with the individual graphenes. Such materials are a fertile ground for novel states largely driven by electronic correlations. Here we find that the ubiquitous Casimir force can serve as a platform for macroscopic manifestations of the quantum e… ▽ More Twisted bilayered graphenes at magic angles are systems housing long ranged periodicity of Moiré pattern together with short ranged periodicity associated with the individual graphenes. Such materials are a fertile ground for novel states largely driven by electronic correlations. Here we find that the ubiquitous Casimir force can serve as a platform for macroscopic manifestations of the quantum effects stemming from the magic angle bilayered graphenes properties and their phases determined by electronic correlations. By utilizing comprehensive calculations for the electronic and optical response, we find that Casimir torque can probe anisotropy from the Drude conductivities in nematic states, while repulsion in the Casimir force can help identify topologically nontrivial phases in magic angle twisted bilayered graphenes. △ Less

Submitted 5 October, 2022; originally announced October 2022.

Comments: 9 pages, 6 figures (main), 7 pages, 7 figures (supplementary); provisionally accepted for publication in 2D Materials

Mott correlations in ABC graphene trilayer aligned with hBN

Authors: M. J. Calderón, A. Camjayi, E. Bascones

Abstract: The nature of the correlated phases found in some graphene heterostructures is under debate. We use dynamical mean-field theory (DMFT) to analyze the effect of local correlations close to half-filling on one of such systems, the ABC trilayer graphene aligned with hexagonal boron nitride (ABC/hBN), which presents a moiré superlattice. This system has shown insulating phases at integer fillings of t… ▽ More The nature of the correlated phases found in some graphene heterostructures is under debate. We use dynamical mean-field theory (DMFT) to analyze the effect of local correlations close to half-filling on one of such systems, the ABC trilayer graphene aligned with hexagonal boron nitride (ABC/hBN), which presents a moiré superlattice. This system has shown insulating phases at integer fillings of the moiré lattice, precisely the fillings at which a sufficiently strong Coulomb interaction (U$_{\rm Mott}$) may produce a metal-insulator Mott transition. Our calculations show that the electronic states are strongly affected by a significant spectral weight transfer at interactions with magnitudes expected to be relevant in experiments. This effect, which emerges at interactions considerably smaller than U$_{\rm Mott}$ and does not require symmetry breaking, impacts the electronic properties at temperatures above the magnetic transitions producing anomalous temperature and do** dependences not present without alignment to hBN. Close to the Mott transition we find that onsite interactions promote an antiferromagnetic (AF) state, probably breaking the C$_3$ symmetry, that will compete with the ferromagnetism arising from intersite exchange interactions to determine the ground state. △ Less

Submitted 28 February, 2022; originally announced February 2022.

Comments: 9 pages, 4 figures (including the supplemental material)

Journal ref: Phys. Rev. B 106, L081123 (2022)

The role of orbital nesting in the superconductivity of Iron-based Superconductors

Authors: R. Fernández-Martin, M. J. Calderón, L. Fanfarillo, B. Valenzuela

Abstract: We analyze the magnetic excitations and the spin-mediated superconductivity in iron-based superconductors within a low-energy model that operates in the band basis but fully incorporates the orbital character of the spin excitations. We show how the orbital selectivity, encoded in our low-energy description, simplifies substantially the analysis and allows for analytical treatments, while retainin… ▽ More We analyze the magnetic excitations and the spin-mediated superconductivity in iron-based superconductors within a low-energy model that operates in the band basis but fully incorporates the orbital character of the spin excitations. We show how the orbital selectivity, encoded in our low-energy description, simplifies substantially the analysis and allows for analytical treatments, while retaining all the main features of both spin-excitations and gap functions computed using multiorbital models. Importantly, our analysis unveils the orbital matching between the hole and electron pockets as the key parameter to determine the momentum-dependence and the hierarchy of the superconducting gaps, instead of the Fermi surface matching as in the common nesting scenario. △ Less

Submitted 7 October, 2021; v1 submitted 6 July, 2021; originally announced July 2021.

Comments: 11 pages, 5 figures. Revised version as published. The revised discussion includes the analysis of the nearly degenerate d-wave pairing symmetry solution beside the dominant s$_\pm$

Journal ref: Condens. Matter 6(3), 34 (2021)

Interactions in the 8-orbital model for twisted bilayer graphene

Authors: M. J. Calderón, E. Bascones

Abstract: We calculate the interactions between the Wannier functions of the 8-orbital model for twisted bilayer graphene (TBG). In this model, two orbitals per valley centered at the AA regions, the AA-p orbitals, account for the most part of the spectral weight of the flats bands. Exchange and assisted-hop** terms between these orbitals are found to be small. Therefore, the low energy properties of TBG… ▽ More We calculate the interactions between the Wannier functions of the 8-orbital model for twisted bilayer graphene (TBG). In this model, two orbitals per valley centered at the AA regions, the AA-p orbitals, account for the most part of the spectral weight of the flats bands. Exchange and assisted-hop** terms between these orbitals are found to be small. Therefore, the low energy properties of TBG will be determined by the density-density interactions. These interactions decay with the distance much faster than in the two orbital model, following a 1/r law in the absence of gates. The magnitude of the largest interaction in the model, the onsite term between the flat band orbitals, is controlled by the size of the AA regions and is estimated to be ~ 40 meV. To screen this interaction, the metallic gates have to be placed at a distance smaller than 5 nm. For larger distances only the long-range part of the interaction is substantially screened. The model reproduces the band deformation induced by do** found in other approaches within the Hartree approximation. Such deformation reveals the presence of other orbitals in the flat bands and is sensitive to the inclusion of the interactions involving them. △ Less

Submitted 30 October, 2020; v1 submitted 31 July, 2020; originally announced July 2020.

Comments: 9 pages, including 6 multiple figures and one appendix

Journal ref: Phys. Rev. B 102, 155149 (2020)

Correlated states in magic angle twisted bilayer graphene under the optical conductivity scrutiny

Authors: M. J. Calderón, E. Bascones

Abstract: Moiré systems displaying flat bands have emerged as novel platforms to study correlated electron phenomena. Insulating and superconducting states appear upon do** magic angle twisted bilayer graphene (TBG), and there is evidence of correlation induced effects at the charge neutrality point (CNP) which could originate from spontaneous symmetry breaking. Our theoretical calculations show how optic… ▽ More Moiré systems displaying flat bands have emerged as novel platforms to study correlated electron phenomena. Insulating and superconducting states appear upon do** magic angle twisted bilayer graphene (TBG), and there is evidence of correlation induced effects at the charge neutrality point (CNP) which could originate from spontaneous symmetry breaking. Our theoretical calculations show how optical conductivity measurements can distinguish different symmetry breaking states, and reveal the nature of the correlated states. In the specific case of nematic order, which breaks the discrete rotational symmetry of the lattice, we find that the Dirac cones are displaced, not only in momentum space but also in energy, inducing finite Drude weight at the CNP. We also show that the sign of the dc conductivity anisotropy induced by a nematic order depends on the degree of lattice relaxation, the do** and the nature of the symmetry breaking. △ Less

Submitted 14 May, 2021; v1 submitted 20 December, 2019; originally announced December 2019.

Comments: 6 pages, including 4 multiple figures + Suppl. Information. with text and 3 figures

Journal ref: npj Quantum Mater. 5, 57 (2020)

Spin-orbit effects surfacing on manganites

Authors: S. Valencia, M. J. Calderón, L. López-Mir, Z. Kostantinovic, E. Schierle, E. Weschke, L. Brey, B. Martínez, Ll. Balcells

Abstract: Spin-orbit coupling in magnetic systems lacking inversion symmetry can give rise to non trivial spin textures. Magnetic thin films and heterostructures are potential candidates for the formation of skyrmions and other non-collinear spin configurations as inversion symmetry is inherently lost at their surfaces and interfaces. However, manganites, in spite of their extraordinarily rich magnetic phas… ▽ More Spin-orbit coupling in magnetic systems lacking inversion symmetry can give rise to non trivial spin textures. Magnetic thin films and heterostructures are potential candidates for the formation of skyrmions and other non-collinear spin configurations as inversion symmetry is inherently lost at their surfaces and interfaces. However, manganites, in spite of their extraordinarily rich magnetic phase diagram, have not yet been considered of interest within this context as their spin-orbit coupling is assumed to be negligible. We demonstrate here, by means of angular dependent X-ray linear dichroism experiments and theoretical calculations, the existence of a noncollinear antiferromagnetic ordering at the surface of ferromagnetic La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin films whose properties can only be explained by an unexpectedly large enhancement of the spin-orbit interaction. Our results reveal that spin-orbit coupling, usually assumed to be very small on manganites, can be significantly enhanced at surfaces and interfaces adding a new twist to the possible magnetic orders that can arise in electronically reconstructed systems. △ Less

Submitted 29 August, 2018; originally announced August 2018.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 98, 115142 (2018)

Lifting of Spin Blockade by Charged Impurities in Si-MOS Double Quantum Dot Devices

Authors: Evelyn King, Joshua S. Schoenfield, M. J. Calderón, Belita Koiller, André Saraiva, Xuedong Hu, HongWen Jiang, Mark Friesen, S. N. Coppersmith

Abstract: One obstacle that has slowed the development of electrically gated metal-oxide-semiconductor (MOS) singlet-triplet qubits is the frequent lack of observed spin blockade, even in samples with large singlet-triplet energy splittings. We present theoretical and experimental evidence that the cause of this problem in MOS double quantum dots is the stray positive charges in the oxide inducing acciden… ▽ More One obstacle that has slowed the development of electrically gated metal-oxide-semiconductor (MOS) singlet-triplet qubits is the frequent lack of observed spin blockade, even in samples with large singlet-triplet energy splittings. We present theoretical and experimental evidence that the cause of this problem in MOS double quantum dots is the stray positive charges in the oxide inducing accidental levels near the device's active region that allow spin blockade lifting. We also present evidence that these effects can be mitigated by device design modifications, such as overlap** gates. △ Less

Submitted 14 April, 2020; v1 submitted 29 July, 2018; originally announced July 2018.

Comments: 10 pages, 8 figures

Journal ref: Phys. Rev. B 101, 155411 (2020)

Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit

Authors: J. C. Abadillo-Uriel, Brandur Thorgrimsson, Dohun Kim, L. W. Smith, C. B. Simmons, Daniel R. Ward, Ryan H. Foote, J. Corrigan, D. E. Savage, M. G. Lagally, M. J. Calderón, S. N. Coppersmith, M. A. Eriksson, Mark Friesen

Abstract: We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the… ▽ More We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the decoherence caused by charge noise is suppressed, even in a parameter regime where true sweet spots are unexpected. Conversely, "hot spots" where the decoherence is enhanced can also occur. Our results suggest that, under appropriate conditions, interfacial atomic structure can be used as a tool to enhance the fidelity of Si double-dot qubits. △ Less

Submitted 25 May, 2018; originally announced May 2018.

Comments: 7 pages

Journal ref: Phys. Rev. B 98, 165438 (2018)

Electric-field tuning of the valley splitting in silicon corner dots

Authors: David J. Ibberson, Léo Bourdet, José C. Abadillo-Uriel, Imtiaz Ahmed, Sylvain Barraud, María J. Calderón, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba

Abstract: We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between a single quantum dot and a double quantum dot in parallel that allows tuning the device in to corner dot formation. We find a linear dependence of the valley s… ▽ More We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between a single quantum dot and a double quantum dot in parallel that allows tuning the device in to corner dot formation. We find a linear dependence of the valley splitting on back-gate voltage, from $880~μ\text{eV}$ to $610~μ\text{eV}$ with a slope of $-45\pm 3~μ\text{eV/V}$ (or equivalently a slope of $-48\pm 3~μ\text{eV/(MV/m)}$ with respect to the effective field). The experimental results are backed up by tight-binding simulations that include the effect of surface roughness, remote charges in the gate stack and discrete dopants in the channel. Our results demonstrate a way to electrically tune the valley splitting in silicon-on-insulator-based quantum dots, a requirement to achieve all-electrical manipulation of silicon spin qubits. △ Less

Submitted 23 July, 2018; v1 submitted 21 May, 2018; originally announced May 2018.

Comments: 5 pages, 3 figures. In this version: Discussion of model expanded; Fig. 3 updated; Refs. added (15, 22, 32, 34, 35, 36, 37)

Journal ref: Applied Physics Letters 113, 053104 (2018)

The nature of correlations in the insulating states of twisted bilayer graphene

Authors: J. M. Pizarro, M. J. Calderón, E. Bascones

Abstract: The recently observed superconductivity in twisted bilayer graphene emerges from insulating states believed to arise from electronic correlations. While there have been many proposals to explain the insulating behaviour, the commensurability at which these states appear suggests that they are Mott insulators. Here we focus on the insulating states with $\pm 2$ electrons or holes with respect to th… ▽ More The recently observed superconductivity in twisted bilayer graphene emerges from insulating states believed to arise from electronic correlations. While there have been many proposals to explain the insulating behaviour, the commensurability at which these states appear suggests that they are Mott insulators. Here we focus on the insulating states with $\pm 2$ electrons or holes with respect to the charge neutrality point. We show that the theoretical expectations for the Mott insulating states are not compatible with the experimentally observed dependence on temperature and magnetic field if, as frequently assumed, only the correlations between electrons on the same site are included. We argue that the inclusion of non-local (inter-site) correlations in the treatment of the Hubbard model can bring the predictions for the magnetic and temperature dependencies of the Mott transition to an agreement with experiments and have consequences for the critical interactions, the size of the gap, and possible pseudogap physics. The importance of the inter-site correlations to explain the experimental observations indicates that the observed insulating gap is not the one between the Hubbard bands and that antiferromagnetic-like correlations play a key role in the Mott transition. △ Less

Submitted 3 January, 2020; v1 submitted 18 May, 2018; originally announced May 2018.

Comments: 8 pages (including appendix), 5 figures

Journal ref: Journal of Physics Communications 3, 035024, 2019

2-dimensional semiconductors pave the way towards dopant based quantum computing

Authors: J. C. Abadillo-Uriel, Belita Koiller, M. J. Calderón

Abstract: Since the 1998 proposal to build a quantum computer using dopants in semiconductors as qubits, much progress has been achieved on semiconductors nano fabrication and control of charge and spins in single dopants. However, an important problem remains, which is the control at the atomic scale of the dopants positioning. We propose to circumvent this problem by using 2 dimensional materials as hosts… ▽ More Since the 1998 proposal to build a quantum computer using dopants in semiconductors as qubits, much progress has been achieved on semiconductors nano fabrication and control of charge and spins in single dopants. However, an important problem remains, which is the control at the atomic scale of the dopants positioning. We propose to circumvent this problem by using 2 dimensional materials as hosts. Since the first isolation of graphene in 2004, the number of new 2D materials with favorable properties for electronics has been growing. Dopants in 2 dimensional systems are more tightly bound and potentially easier to position and manipulate. Considering the properties of currently available 2D materials, we access the feasibility of such proposal in terms of the manipulability of isolated dopants (for single qubit operations) and dopant pairs (for two qubit operations). Our results indicate that a wide variety of 2D materials may perform at least as well as the currently studied bulk host for donor qubits. △ Less

Submitted 7 January, 2018; originally announced January 2018.

Comments: 5 pages, 3 figures

Journal ref: Beilstein J. Nanotechnol. 9, 2668 (2018)

Entanglement control and magic angles for acceptor qubits in Si

Authors: J. C. Abadillo-Uriel, Joe Salfi, Xuedong Hu, Sven Rogge, M. J. Calderón, Dimitrie Culcer

Abstract: Full electrical control of quantum bits could enable fast, low-power, scalable quantum computation. Although electric dipoles are highly attractive to couple spin qubits electrically over long distances, mechanisms identified to control two-qubit couplings do not permit single-qubit operations while two-qubit couplings are off. Here we identify a mechanism to modulate electrical coupling of spin q… ▽ More Full electrical control of quantum bits could enable fast, low-power, scalable quantum computation. Although electric dipoles are highly attractive to couple spin qubits electrically over long distances, mechanisms identified to control two-qubit couplings do not permit single-qubit operations while two-qubit couplings are off. Here we identify a mechanism to modulate electrical coupling of spin qubits that overcomes this drawback for hole spin qubits in acceptors,that is based on the electrical tuning of the direction of the spin-dependent electric dipole by a gate. In this way, inter-qubit coupling can be turned off electrically by tuning to a "magic angle" of vanishing electric dipole-dipole interactions, while retaining the ability to manipulate the individual qubits. This effect stems from the interplay of the $\rm T_d$ symmetry of the acceptor state in the Si lattice with the magnetic field orientation, and the spin-3/2 characteristic of hole systems. Magnetic field direction also allows to greatly suppress spin relaxation by phonons that limit single qubit performance, while retaining sweet spots where the qubits are insensitive to charge noise. Our findings can be directly applied to state-of-the-art acceptor based architectures, for which we propose suitable protocols to practically achieve full electrical tunability of entanglement and the realization of a decoherence-free subspace. △ Less

Submitted 20 December, 2017; v1 submitted 27 June, 2017; originally announced June 2017.

Comments: Main text (5 pages, 4 figures), Supplemental Materials (8 pages, 2 figures), 2 ancillary files (.mov). Revised version

Journal ref: Appl. Phys. Lett. 113, 012102 (2018)

Spin qubit manipulation of acceptor bound states in group IV quantum wells

Authors: J. C. Abadillo-Uriel, M. J. Calderón

Abstract: The large spin-orbit coupling in the valence band of group IV semiconductors provides an electric field knob for spin-qubit manipulation. This fact can be exploited with acceptor based qubits. Spin manipulation of holes bound to acceptors in engineered SiGe quantum wells depends very strongly on the electric field applied and on the heterostructure parameters. The g-factor is enhanced by the Ge co… ▽ More The large spin-orbit coupling in the valence band of group IV semiconductors provides an electric field knob for spin-qubit manipulation. This fact can be exploited with acceptor based qubits. Spin manipulation of holes bound to acceptors in engineered SiGe quantum wells depends very strongly on the electric field applied and on the heterostructure parameters. The g-factor is enhanced by the Ge content and can be tuned by shifting the hole wave-function between the heterostructure constituent layers. The lack of inversion symmetry induced both by the quantum well and the electric fields together with the g-factor tunability allows the possibility of different qubit manipulation methods such as electron spin resonance, electric dipole spin resonance and g-tensor modulation resonance. Rabi frequencies up to hundreds of MHz can be achieved with heavy-hole qubits, and of the order of GHz with light-hole qubits. △ Less

Submitted 3 February, 2017; originally announced February 2017.

Comments: 10 pages, 8 figures

Journal ref: New Journal of Physics 19(4), 043027, (2017)

Strong correlations and the search for high-Tc superconductivity in chromium pnictides and chalcogenides

Authors: J. M. Pizarro, M. J. Calderón, J. Liu, M. C. Muñoz, E. Bascones

Abstract: Undoped iron superconductors accommodate $n=6$ electrons in five d-orbitals. Experimental and theoretical evidence shows that the strength of correlations increases with hole-do**, as the electronic filling approaches half-filling with $n=5$ electrons. This evidence delineates a scenario in which the parent compound of iron superconductors is the half-filled system, in analogy to cuprate superco… ▽ More Undoped iron superconductors accommodate $n=6$ electrons in five d-orbitals. Experimental and theoretical evidence shows that the strength of correlations increases with hole-do**, as the electronic filling approaches half-filling with $n=5$ electrons. This evidence delineates a scenario in which the parent compound of iron superconductors is the half-filled system, in analogy to cuprate superconductors. In cuprates the superconductivity can be induced upon electron or hole do**. In this work we propose to search for high-Tc superconductivity and strong correlations in chromium pnictides and chalcogenides with $n<5$ electrons. By means of ab-initio, slave spin and multi-orbital RPA calculations we analyse the strength of the correlations and the superconducting and magnetic instabilities in these systems with main focus on LaCrAsO. We find that electron-doped LaCrAsO is a strongly correlated system with competing magnetic interactions, being $(π,π)$ antiferromagnetism and nodal d-wave pairing the most plausible magnetic and superconducting instabilities, respectively. △ Less

Submitted 29 October, 2016; originally announced October 2016.

Comments: 5 pages, 5 figures + supplementary information: 3 pages, 3 figures

Journal ref: Phys. Rev. B 95, 075115 (2017)

Interface effects on acceptor qubits in silicon and germanium

Authors: J. C. Abadillo-Uriel, M. J. Calderón

Abstract: Dopant-based quantum computing implementations often require the dopants to be situated close to an interface to facilitate qubit manipulation with local gates. Interfaces not only modify the energies of the bound states but also affect their symmetry. Making use of the successful effective mass theory we study the energy spectra of acceptors in Si or Ge taking into account the quantum confinement… ▽ More Dopant-based quantum computing implementations often require the dopants to be situated close to an interface to facilitate qubit manipulation with local gates. Interfaces not only modify the energies of the bound states but also affect their symmetry. Making use of the successful effective mass theory we study the energy spectra of acceptors in Si or Ge taking into account the quantum confinement, the dielectric mismatch and the central cell effects. The presence of an interface puts constraints to the allowed symmetries and lead to the splitting of the ground state in two Kramers doublets [J. Mol et al, App. Phys. Lett. 106, 203110 (2015)]. Inversion symmetry breaking also implies parity mixing which affects the allowed optical transitions. Consequences for acceptor qubits are discussed. △ Less

Submitted 2 September, 2015; originally announced September 2015.

Comments: 9 pages, 7 figures

Journal ref: Nanotechnology 27, 024003 (2016)

Donor Wavefunctions in Si Gauged by STM Images

Authors: A. L. Saraiva, J. Salfi, J. Bocquel, B. Voisin, S. Rogge, Rodrigo B. Capaz, M. J. Calderón, Belita Koiller

Abstract: The triumph of effective mass theory in describing the energy spectrum of dopants does not guarantee that the model wavefunctions will withstand an experimental test. Such wavefunctions have recently been probed by scanning tunneling spectroscopy, revealing localized patterns of resonantly enhanced tunneling currents. We show that the shape of the conducting splotches resemble a cut through Kohn-L… ▽ More The triumph of effective mass theory in describing the energy spectrum of dopants does not guarantee that the model wavefunctions will withstand an experimental test. Such wavefunctions have recently been probed by scanning tunneling spectroscopy, revealing localized patterns of resonantly enhanced tunneling currents. We show that the shape of the conducting splotches resemble a cut through Kohn-Luttinger (KL) hydrogenic envelopes, which modulate the interfering Bloch states of conduction electrons. All the non-monotonic features of the current profile are consistent with the charge density fluctuations observed between successive {001} atomic planes, including a counterintuitive reduction of the symmetry - a heritage of the lowered point group symmetry at these planes. A model-independent analysis of the diffraction figure constrains the value of the electron wavevector to $k_0 = (0.82 \pm 0.03)(2π/a_{Si})$. Unlike prior measurements, averaged over a sizeable density of electrons, this estimate is obtained directly from isolated electrons. We further investigate the model-specific anisotropy of the wave function envelope, related to the effective mass anisotropy. This anisotropy appears in the KL variational wave function envelope as the ratio between Bohr radii b=a. We demonstrate that the central cell corrected estimates for this ratio are encouragingly accurate, leading to the conclusion that the KL theory is a valid model not only for energies but for wavefunctions as well. △ Less

Submitted 11 August, 2015; originally announced August 2015.

Comments: 12 pages, 8 figures

Journal ref: Phys. Rev. B 93, 045303 (2016)

Magnetic interactions in iron superconductors: A review

Authors: E. Bascones, B. Valenzuela, M. J. Calderon

Abstract: High temperature superconductivity in iron pnictides and chalcogenides emerges when a magnetic phase is suppressed. The multi-orbital character and the strength of correlations underlie this complex phenomenology, involving magnetic softness and anisotropies, with Hund's coupling playing an important role. We review here the different theoretical approaches used to describe the magnetic interactio… ▽ More High temperature superconductivity in iron pnictides and chalcogenides emerges when a magnetic phase is suppressed. The multi-orbital character and the strength of correlations underlie this complex phenomenology, involving magnetic softness and anisotropies, with Hund's coupling playing an important role. We review here the different theoretical approaches used to describe the magnetic interactions in these systems. We show that taking into account the orbital degree of freedom allows us to unify in a single phase diagram the main mechanisms proposed to explain the (π,0) order in iron pnictides: the nesting-driven, the exchange between localized spins, and the Hund induced magnetic state with orbital differentiation. Comparison of theoretical estimates and experimental results helps locate the Fe superconductors in the phase diagram. In addition, orbital physics is crucial to address the magnetic softness, the do** dependent properties, and the anisotropies. △ Less

Submitted 12 May, 2015; v1 submitted 13 March, 2015; originally announced March 2015.

Comments: Invited review article for a focus issue of Comptes Rendus Physique: 26 pages, 10 figures. Revised version, as accepted. Small changes throughout the text plus new subsection (Sec. IIIE)

Journal ref: Comptes Rendus Physique 17, 36-59 (2016)

Theory of one and two donors in Silicon

Authors: A. L. Saraiva, A. Baena, M. J. Calderón, Belita Koiller

Abstract: We provide here a roadmap for modeling silicon nano-devices with one or two group V donors (D). We discuss systems containing one or two electrons, that is, D^0, D^-, D_2^+ and D_2^0 centers. The impact of different levels of approximation is discussed. The most accurate instances -- for which we provide quantitative results -- are within multivalley effective mass including the central cell corre… ▽ More We provide here a roadmap for modeling silicon nano-devices with one or two group V donors (D). We discuss systems containing one or two electrons, that is, D^0, D^-, D_2^+ and D_2^0 centers. The impact of different levels of approximation is discussed. The most accurate instances -- for which we provide quantitative results -- are within multivalley effective mass including the central cell correction and a configuration interaction account of the electron-electron correlations. We also derive insightful, yet less accurate, analytical approximations and discuss their validity and limitations -- in particular, for a donor pair, we discuss the single orbital LCAO method, the Huckel approximation and the Hubbard model. Finally we discuss the connection between these results and recent experiments on few dopant devices. △ Less

Submitted 30 July, 2014; originally announced July 2014.

Comments: 13 pages, 6 figures

Journal ref: J. Phys.: Condens. Matter 27, 154208 (2015)

Correlation, do** and interband effects on the optical conductivity of iron superconductors

Authors: M. J. Calderón, L. de' Medici, B. Valenzuela, E. Bascones

Abstract: Electronic interactions in multiorbital systems lead to non-trivial features in the optical spectrum. In iron superconductors the Drude weight is strongly suppressed with hole-do**. We discuss why the common association of the renormalization of the Drude weight with that of the kinetic energy, used in single band systems, does not hold in multi-orbital systems. This applies even in a Fermi liqu… ▽ More Electronic interactions in multiorbital systems lead to non-trivial features in the optical spectrum. In iron superconductors the Drude weight is strongly suppressed with hole-do**. We discuss why the common association of the renormalization of the Drude weight with that of the kinetic energy, used in single band systems, does not hold in multi-orbital systems. This applies even in a Fermi liquid description when each orbital is renormalized differently, as it happens in iron superconductors. We estimate the contribution of interband transitions at low energies. We show that this contribution is strongly enhanced by interactions and dominates the coherent part of the spectral weight in hole-doped samples at frequencies currently used to determine the Drude weight. △ Less

Submitted 19 September, 2014; v1 submitted 25 July, 2014; originally announced July 2014.

Comments: 5 pages, 3 figures, as accepted in Phys. Rev. B

Journal ref: Phys. Rev. B 90, 115128 (2014)

An Exchange-Coupled Donor Molecule in Silicon

Authors: M. Fernando Gonzalez-Zalba, André Saraiva, Dominik Heiss, Maria J. Calderón, Belita Koiller, Andrew J. Ferguson

Abstract: Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics [6, 7]. The level of maturity this field has reached has enabled the fabrication and demonstration of transistors that base their functionality on a single imp… ▽ More Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics [6, 7]. The level of maturity this field has reached has enabled the fabrication and demonstration of transistors that base their functionality on a single impurity atom [8, 9] allowing the predicted single-donor energy spectrum to be checked by an electrical transport measurement. Generalizing the concept, a donor pair may behave as a hydrogen molecule analogue. However, the molecular quantum mechanical solution only takes us so far and a detailed understanding of the electronic structure of these molecular systems is a challenge to be overcome. Here we present a combined experimental-theoretical demonstration of the energy spectrum of a strongly interacting donor pair in the channel of a silicon nanotransistor and show the first observation of measurable two-donor exchange coupling. Moreover, the analysis of the three charge states of the pair shows evidence of a simultaneous enhancement of the binding and charging energies with respect to the single donor spectrum. The measured data are accurately matched by results obtained in an effective mass theory incorporating the Bloch states multiplicity in Si, a central cell corrected donor potential and a full configuration interaction treatment of the 2-electron spectrum. Our data describe the basic 2-qubit entanglement element in Kane's quantum processing scheme [1], namely exchange coupling, implemented here in the range of molecular hybridization. △ Less

Submitted 16 December, 2013; originally announced December 2013.

Comments: 9 pages, 5 figures

Journal ref: Nano Letters, 2014, 14, 5672

Coupling of the A_{1g} As-phonon to magnetism in iron pnictides

Authors: N. A. García-Martínez, B. Valenzuela, S. Ciuchi, E. Cappelluti, M. J. Calderón, E. Bascones

Abstract: Charge, spin and lattice degrees of freedom are strongly entangled in iron superconductors. A neat consequence of this entanglement is the behavior of the A_{1g} As-phonon resonance in the different polarization symmetries of Raman spectroscopy when undergoing the magneto-structural transition. In this work we show that the observed behavior could be a direct consequence of the coupling of the pho… ▽ More Charge, spin and lattice degrees of freedom are strongly entangled in iron superconductors. A neat consequence of this entanglement is the behavior of the A_{1g} As-phonon resonance in the different polarization symmetries of Raman spectroscopy when undergoing the magneto-structural transition. In this work we show that the observed behavior could be a direct consequence of the coupling of the phonons with the electronic excitations in the anisotropic magnetic state. We discuss this scenario within a five orbital tight-binding model coupled to phonons via the dependence of the Slater-Koster parameters on the As position. We identify two qualitatively different channels of the electron-phonon interaction: a geometrical one related to the Fe-As-Fe angle and another one associated with the modification upon As displacement of the Fe-As energy integrals pdsigma and pdpi. While both mechanisms result in a finite B_{1g} response, the behavior of the phonon intensity in the A_{1g} and B_{1g} Raman polarization geometries is qualitatively different when the coupling is driven by the angle or by the energy integral dependence. We discuss our results in view of the experimental reports. △ Less

Submitted 26 July, 2013; originally announced July 2013.

Comments: 10 pages including 7 figures

Journal ref: Phys. Rev. B 88, 165106 (2013)

Optical conductivity and Raman scattering of iron superconductors

Authors: B. Valenzuela, M. J. Calderon, G. Leon, E. Bascones

Abstract: We discuss how to analyze the optical conductivity and Raman spectra of multi-orbital systems using the velocity and the Raman vertices in a similar way Raman vertices were used to disentangle nodal and antinodal regions in cuprates. We apply this method to iron superconductors in the magnetic and non-magnetic states, studied at the mean field level. We find that the anisotropy in the optical cond… ▽ More We discuss how to analyze the optical conductivity and Raman spectra of multi-orbital systems using the velocity and the Raman vertices in a similar way Raman vertices were used to disentangle nodal and antinodal regions in cuprates. We apply this method to iron superconductors in the magnetic and non-magnetic states, studied at the mean field level. We find that the anisotropy in the optical conductivity at low frequencies reflects the difference between the magnetic gaps at the X and Y electron pockets. Both gaps are sampled by Raman spectroscopy. We also show that the Drude weight anisotropy in the magnetic state is sensitive to small changes in the lattice structure. △ Less

Submitted 12 February, 2013; v1 submitted 19 December, 2012; originally announced December 2012.

Comments: 14 pages, 10 figures, as accepted in Phys. Rev. B, explanations/discussion added in Secs. II, III and VI

Journal ref: Phys. Rev. B 87, 075136 (2013)

Orbital differentiation and the role of orbital ordering in the magnetic state of Fe superconductors

Authors: E. Bascones, B. Valenzuela, M. J. Calderón

Abstract: We analyze the metallic (pi,0) antiferromagnetic state of a five-orbital model for iron superconductors. We find that with increasing interactions the system does not evolve trivially from the pure itinerant to the pure localized regime. Instead we find a region with a strong orbital differentiation between xy and yz, which are half-filled gapped states at the Fermi level, and itinerant zx, 3z^2-r… ▽ More We analyze the metallic (pi,0) antiferromagnetic state of a five-orbital model for iron superconductors. We find that with increasing interactions the system does not evolve trivially from the pure itinerant to the pure localized regime. Instead we find a region with a strong orbital differentiation between xy and yz, which are half-filled gapped states at the Fermi level, and itinerant zx, 3z^2-r^2 and x^2-y^2. We argue that orbital ordering between yz and zx orbitals arises as a consequence of the interplay of the exchange energy in the antiferromagnetic x direction and the kinetic energy gained by the itinerant orbitals along the ferromagnetic y direction with an overall dominance of the kinetic energy gain. We indicate that iron superconductors are close to the boundary between the itinerant and the orbital differentiated regimes and that it could be possible to cross this boundary with do**. △ Less

Submitted 12 November, 2012; v1 submitted 9 August, 2012; originally announced August 2012.

Comments: 6 pages, including 7 figures. As accepted in Phys. Rev. B

Journal ref: Phys. Rev. B 86, 174508 (2012)

Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_2 interface

Authors: A. Baena, A. L. Saraiva, Belita Koiller, M. J. Calderón

Abstract: We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the electron ground state is essentially confined at the donor. At high fields the ground state is such that the electron is drawn to the interface, leaving the donor pra… ▽ More We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the electron ground state is essentially confined at the donor. At high fields the ground state is such that the electron is drawn to the interface, leaving the donor practically ionized. Valley splitting at the interface occurs due to the valley-orbit coupling, V_vo^I = |V_vo^I| e^{i theta}. At intermediate electric fields, close to a characteristic shuttling field, the electron states may constitute hybridized states with valley compositions different from the donor and the interface ground states. The full spectrum of energy levels shows crossings and anti-crossings as the field varies. The degree of level repulsion, thus the width of the anti-crossing gap, depends on the relative valley compositions, which vary with |V_vo^I|, theta and the interface-donor distance. We focus on the valley configurations of the states involved in the donor-interface tunneling process, given by the anti-crossing of the three lowest eigenstates. A sequence of two anti-crossings takes place and the complex phase theta affects the symmetries of the eigenstates and level anti-crossing gaps. We discuss the implications of our results on the practical manipulation of donor electrons in Si nanostructures. △ Less

Submitted 8 August, 2012; v1 submitted 28 March, 2012; originally announced March 2012.

Comments: 8 pages, including 5 figures. v2: Minor clarifying changes in the text and figures. Change of title. As published in PRB

Journal ref: Phys. Rev. B 86, 035317 (2012)

Magnetic interactions in iron superconductors studied with a five-orbital model within the Hartree-Fock and Heisenberg approximations

Authors: M. J. Calderon, G. Leon, B. Valenzuela, E. Bascones

Abstract: We have analyzed the magnetic interactions of a five orbital model for iron superconductors treated both within Hartree-Fock and Heisenberg approximations. We have found that the exchange constants depend non-trivially on the Fe-As-Fe angle and on the charge and orbital filling. Within the localized picture, columnar ordering is found for intermediate Hund's coupling J_H. At smaller J_H, an unusua… ▽ More We have analyzed the magnetic interactions of a five orbital model for iron superconductors treated both within Hartree-Fock and Heisenberg approximations. We have found that the exchange constants depend non-trivially on the Fe-As-Fe angle and on the charge and orbital filling. Within the localized picture, columnar ordering is found for intermediate Hund's coupling J_H. At smaller J_H, an unusual orbital reorganization stabilizes checkerboard ordering. Ferromagnetism appears at large J_H. Ferromagnetic correlations are enhanced with electron do** while large hole do** stabilizes checkerboard antiferromagnetism, explaining the change in magnetic interactions upon substitution of Fe by Co or Mn. For intermediate and large values of U, Hartree-Fock shows similar results as strong coupling though with a double stripe phase instead of ferromagnetism. Itinerancy enhances the stability of the columnar ordering. Comparison of the two approaches reveals a metallic region of the phase diagram where strong coupling physics is determinant. △ Less

Submitted 5 October, 2012; v1 submitted 12 July, 2011; originally announced July 2011.

Comments: 8 pages including 7 figures. As accepted in Phys. Rev. B

Journal ref: Phys. Rev. B 86, 104514 (2012)

Magnetic Field Probing of an SU(4) Kondo Resonance in a Single Atom Transistor

Authors: G. C. Tettamanzi, J. Verduijn, G. P. Lansbergen, M. Blaauboer, M. J. Calderón, R. Aguado, S. Rogge

Abstract: Semiconductor nano-devices have been scaled to the level that transport can be dominated by a single dopant atom. In the strong coupling case a Kondo effect is observed when one electron is bound to the atom. Here, we report on the spin as well as orbital Kondo ground state. We experimentally as well than theoretically show how we can tune a symmetry transition from a SU(4) ground state, a many bo… ▽ More Semiconductor nano-devices have been scaled to the level that transport can be dominated by a single dopant atom. In the strong coupling case a Kondo effect is observed when one electron is bound to the atom. Here, we report on the spin as well as orbital Kondo ground state. We experimentally as well than theoretically show how we can tune a symmetry transition from a SU(4) ground state, a many body state that forms a spin as well as orbital singlet by virtual exchange with the leads, to a pure SU(2) orbital ground state, as a function of magnetic field. The small size and the s-like orbital symmetry of the ground state of the dopant, make it a model system in which the magnetic field only couples to the spin degree of freedom and allows for observation of this SU(4) to SU(2) transition. △ Less

Submitted 13 December, 2011; v1 submitted 15 February, 2011; originally announced February 2011.

Comments: 12 pages, 10 figures, accepted for publication in Physical Review Letters

Journal ref: Phys. Rev. Lett. 108, 046803 (2012)

Magnetoelectric coupling at the interface of BiFeO3/La0.7Sr0.3MnO3 multilayers

Authors: M. J. Calderon, S. Liang, R. Yu, J. Salafranca, S. Dong, S. Yunoki, L. Brey, A. Moreo, E. Dagotto

Abstract: Electric-field controlled exchange bias in a heterostructure composed of the ferromagnetic manganite La0.7Sr0.3MO3 and the ferroelectric antiferromagnetic BiFeO3 has recently been demonstrated experimentally. By means of a microscopic model Hamiltonian we provide a possible explanation of the origin of this magnetoelectric coupling. We find, in agreement with experimental results, a net ferromagne… ▽ More Electric-field controlled exchange bias in a heterostructure composed of the ferromagnetic manganite La0.7Sr0.3MO3 and the ferroelectric antiferromagnetic BiFeO3 has recently been demonstrated experimentally. By means of a microscopic model Hamiltonian we provide a possible explanation of the origin of this magnetoelectric coupling. We find, in agreement with experimental results, a net ferromagnetic moment at the BiFeO3 interface. The induced ferromagnetic moment is the result of the competition between the e_g-electrons double exchange and the t_2g-spins antiferromagnetic superexchange that dominate in bulk BiFeO3. The balance of these simultaneous ferromagnetic and antiferromagnetic tendencies is strongly affected by the interfacial electronic charge density which, in turn, can be controlled by the BiFeO3 ferroelectric polarization. △ Less

Submitted 7 December, 2010; originally announced December 2010.

Comments: 4 pages, including 4 figures

Journal ref: Phys. Rev. B 84, 024422 (2011)

Effect of strain on the orbital and magnetic ordering of manganite thin films and their interface with an insulator

Authors: A. Baena, L. Brey, M. J. Calderon

Abstract: We study the effect of uniform uniaxial strain on the ground state electronic configuration of a thin film manganite. Our model Hamiltonian includes the double-exchange, the Jahn-Teller electron-lattice coupling, and the antiferromagnetic superexchange. The strain arises due to the lattice mismatch between an insulating substrate and a manganite which produces a tetragonal distortion. This is incl… ▽ More We study the effect of uniform uniaxial strain on the ground state electronic configuration of a thin film manganite. Our model Hamiltonian includes the double-exchange, the Jahn-Teller electron-lattice coupling, and the antiferromagnetic superexchange. The strain arises due to the lattice mismatch between an insulating substrate and a manganite which produces a tetragonal distortion. This is included in the model via a modification of the hop** amplitude and the introduction of an energy splitting between the Mn e_g levels. We analyze the bulk properties of half-doped manganites and the electronic reconstruction at the interface between a ferromagnetic and metallic manganite and the insulating substrate. The strain drives an orbital selection modifying the electronic properties and the magnetic ordering of manganites and their interfaces. △ Less

Submitted 23 September, 2010; originally announced September 2010.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. B-83-6-064424-2011

Conductivity anisotropy in the antiferromagnetic state of iron pnictides

Authors: B. Valenzuela, E. Bascones, M. J. Calderón

Abstract: Recent experiments on iron pnictides have uncovered a large in-plane resistivity anisotropy with a surprising result: the system conducts better in the antiferromagnetic x direction than in the ferromagnetic y direction. We address this problem by calculating the ratio of the Drude weight along the x and y directions, Dx/Dy, for the mean-field Q=(π,0) magnetic phase diagram of a five-band model fo… ▽ More Recent experiments on iron pnictides have uncovered a large in-plane resistivity anisotropy with a surprising result: the system conducts better in the antiferromagnetic x direction than in the ferromagnetic y direction. We address this problem by calculating the ratio of the Drude weight along the x and y directions, Dx/Dy, for the mean-field Q=(π,0) magnetic phase diagram of a five-band model for the undoped pnictides. We find that Dx/Dy ranges between 0.3 < D_x/D_y < 1.4 for different interaction parameters. Large values of orbital ordering favor an anisotropy opposite to the one found experimentally. On the other hand D_x/D_y is strongly dependent on the topology and morfology of the reconstructed Fermi surface. Our results points against orbital ordering as the origin of the observed conductivity anisotropy, which may be ascribed to the anisotropy of the Fermi velocity. △ Less

Submitted 22 September, 2010; v1 submitted 20 July, 2010; originally announced July 2010.

Comments: 4 pages, 3 pdf figures. Fig 1(b) changed, one equation corrected, minor changes in the text, references updated

Journal ref: PRL 105, 207202 (2010)

Intervalley coupling for interface-bound electrons in silicon: An effective mass study

Authors: A. L. Saraiva, M. J. Calderón, Rodrigo B. Capaz, Xuedong Hu, S. Das Sarma, Belita Koiller

Abstract: Orbital degeneracy of the electronic conduction band edge in silicon is a potential roadblock to the storage and manipulation of quantum information involving the electronic spin degree of freedom in this host material. This difficulty may be mitigated near an interface between Si and a barrier material, where intervalley scattering may couple states in the conduction ground state, leading to nond… ▽ More Orbital degeneracy of the electronic conduction band edge in silicon is a potential roadblock to the storage and manipulation of quantum information involving the electronic spin degree of freedom in this host material. This difficulty may be mitigated near an interface between Si and a barrier material, where intervalley scattering may couple states in the conduction ground state, leading to nondegenerate orbital ground and first excited states. The level splitting is experimentally found to have a strong sample dependence, varying by orders of magnitude for different interfaces and samples. The basic physical mechanisms leading to such coupling in different systems are addressed. We expand our recent study based on an effective mass approach, incorporating the full plane-wave expansions of the Bloch functions at the conduction band minima. Physical insights emerge naturally from a simple Si/barrier model. In particular, we present a clear comparison between ours and different approximations and formalisms adopted in the literature and establish the applicability of these approximations in different physical scenarios. △ Less

Submitted 14 November, 2011; v1 submitted 16 June, 2010; originally announced June 2010.

Comments: 11 pages, 3 figures, 2 tables

Journal ref: Phys. Rev. B 84, 155320 (2011)

Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch

Authors: M. J. Calderon, J. Verduijn, G. P. Lansbergen, G. C. Tettamanzi, S. Rogge, Belita Koiller

Abstract: Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the charging energy of isolated As dopants in Si FinFETs relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured small chargi… ▽ More Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the charging energy of isolated As dopants in Si FinFETs relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured small charging energy may be due to a combined effect of the insulator screening and the proximity of metallic gates. △ Less

Submitted 7 May, 2010; originally announced May 2010.

Comments: 7 pages, 6 figures

Journal ref: Phys. Rev. B 82, 075317 (2010)

Low magnetization and anisotropy in the antiferromagnetic state of undoped iron pnictides

Authors: E. Bascones, M. J. Calderon, B. Valenzuela

Abstract: We examine the magnetic phase diagram of iron pnictides using a five band model. For the intermediate values of the interaction expected to hold in the iron pnictides, we find a metallic low moment state characterized by antiparallel orbital magnetic moments. The anisotropy of the interorbital hop** amplitudes is the key to understanding this low moment state. This state accounts for the small m… ▽ More We examine the magnetic phase diagram of iron pnictides using a five band model. For the intermediate values of the interaction expected to hold in the iron pnictides, we find a metallic low moment state characterized by antiparallel orbital magnetic moments. The anisotropy of the interorbital hop** amplitudes is the key to understanding this low moment state. This state accounts for the small magnetization measured in undoped iron pnictides and leads to the strong exchange anisotropy found in neutron experiments. Orbital ordering is concomitant with magnetism and produces the large zx orbital weight seen at Gamma in photoemission experiments. △ Less

Submitted 8 June, 2010; v1 submitted 12 February, 2010; originally announced February 2010.

Comments: 4 pages, 4 eps figures. Small changes in the text. Modification of colors in Figs. Final version as accepted in PRL

Journal ref: Phys. Rev. Lett. 104, 227201 (2010)

Tight binding model for iron pnictides

Authors: M. J. Calderon, B. Valenzuela, E. Bascones

Abstract: We propose a five-band tight-binding model for the Fe-As layers of iron pnictides with the hop** amplitudes calculated within the Slater-Koster framework. The band structure found in DFT, including the orbital content of the bands, is well reproduced using only four fitting parameters to determine all the hop** amplitudes. The model allows to study the changes in the electronic structure cau… ▽ More We propose a five-band tight-binding model for the Fe-As layers of iron pnictides with the hop** amplitudes calculated within the Slater-Koster framework. The band structure found in DFT, including the orbital content of the bands, is well reproduced using only four fitting parameters to determine all the hop** amplitudes. The model allows to study the changes in the electronic structure caused by a modification of the angle $α$ formed by the Fe-As bonds and the Fe-plane and recovers the phenomenology previously discussed in the literature. We also find that changes in $α$ modify the shape and orbital content of the Fermi surface sheets. △ Less

Submitted 8 October, 2009; v1 submitted 7 July, 2009; originally announced July 2009.

Comments: 12 pages, 6 eps figures. Figs 1 and 2 modified, minor changes in the text. A few references added

Journal ref: Phys. Rev. B 80, 094531 (2009)

Physical mechanisms of interface-mediated intervalley coupling in Si

Authors: A. L. Saraiva, M. J. Calderón, Xuedong Hu, S. Das Sarma, Belita Koiller

Abstract: The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifted at an interface with an insulator as the spatially abrupt change in the conduction band minimum leads to intervalley scattering. We present a theoretical study of the interface-induced valley splitting in Si that pro… ▽ More The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifted at an interface with an insulator as the spatially abrupt change in the conduction band minimum leads to intervalley scattering. We present a theoretical study of the interface-induced valley splitting in Si that provides simple criteria for optimal fabrication parameters to maximize this splitting. Our work emphasizes the relevance of different interface-related properties to the valley splitting. △ Less

Submitted 31 August, 2009; v1 submitted 29 January, 2009; originally announced January 2009.

Comments: 4 pages, revised version

Journal ref: Phys. Rev. B 80, 081305(R) (2009)

Effect of the tetrahedral distortion on the electronic properties of iron-pnictides

Authors: M. J. Calderon, B. Valenzuela, E. Bascones

Abstract: We study the dependence of the electronic structure of iron pnictides on the angle formed by the arsenic-iron bonds. Within a Slater-Koster tight binding model which captures the correct symmetry properties of the bands, we show that the density of states and the band structure are sensitive to the distortion of the tetrahedral environment of the iron atoms. This sensitivity is extremely strong… ▽ More We study the dependence of the electronic structure of iron pnictides on the angle formed by the arsenic-iron bonds. Within a Slater-Koster tight binding model which captures the correct symmetry properties of the bands, we show that the density of states and the band structure are sensitive to the distortion of the tetrahedral environment of the iron atoms. This sensitivity is extremely strong in a two-orbital (d_xz, d_yz) model due to the formation of a flat band around the Fermi level. Inclusion of the d_xy orbital destroys the flat band while kee** a considerable angle dependence in the band structure. △ Less

Submitted 8 October, 2008; v1 submitted 30 September, 2008; originally announced October 2008.

Comments: 5 pages, including 5 figures. Fig. 5 replaced. Minor changes in the text

Journal ref: New J. Phys. 11, 013051 (2009)

Quantum control and manipulation of donor electrons in Si-based quantum computing

Authors: M. J. Calderon, A. Saraiva, B. Koiller, S. Das Sarma

Abstract: Doped Si is a promising candidate for quantum computing due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the last few decades. This proposal for a quantum computer ultimately relies on the quantum control of electrons bound to donors near a Si/barrier (e.g. SiO2) interface. We address here several important issues… ▽ More Doped Si is a promising candidate for quantum computing due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the last few decades. This proposal for a quantum computer ultimately relies on the quantum control of electrons bound to donors near a Si/barrier (e.g. SiO2) interface. We address here several important issues and define critical parameters that establish the conditions that allow the manipulation of donor electrons in Si by means of external electric and magnetic fields. △ Less

Submitted 21 July, 2009; v1 submitted 22 September, 2008; originally announced September 2008.

Comments: Invited Presentation at the 29th International Conference on the Physics of Semiconductors, Rio de Janeiro - Brazil, Jul 27-Aug 1, 2008. A paragraph added to the conclusions, 4 new references

Journal ref: Journal of Applied Physics 105, 122410 (2009)

Electron gas at the interface between two antiferromagnetic insulating manganites

Authors: M. J. Calderon, J. Salafranca, L. Brey

Abstract: We study theoretically the magnetic and electric properties of the interface between two antiferromagnetic and insulating manganites: La0.5Ca0.5MnO3, a strong correlated insulator, and CaMnO3, a band-insulator. We find that a ferromagnetic and metallic electron gas is formed at the interface between the two layers. We confirm the metallic character of the interface by calculating the in-plane co… ▽ More We study theoretically the magnetic and electric properties of the interface between two antiferromagnetic and insulating manganites: La0.5Ca0.5MnO3, a strong correlated insulator, and CaMnO3, a band-insulator. We find that a ferromagnetic and metallic electron gas is formed at the interface between the two layers. We confirm the metallic character of the interface by calculating the in-plane conductance. The possibility of increasing the electron gas density by selective do** is also discussed. △ Less

Submitted 22 April, 2008; originally announced April 2008.

Comments: 6 pages, including 9 figures

Journal ref: Phys. Rev. B 78, 024415 (2008)

Limited local electron-lattice coupling in manganites

Authors: D. Sanchez, M. J. Calderon, J. Sanchez-Benitez, A. J. Williams, J. P. Attfield, P. A. Midgley, N. D. Mathur

Abstract: (Pr,Ca)MnO3 is the archetypal charge-ordered manganite, but in Pr0.48Ca0.52MnO3 we find (using convergent-beam electron diffraction and dark-field images) that the superlattice period is locally incommensurate with respect to the parent lattice, and that the superlattice orientation possesses significant local variations. This suggests that local electron-lattice coupling never overwhelmingly do… ▽ More (Pr,Ca)MnO3 is the archetypal charge-ordered manganite, but in Pr0.48Ca0.52MnO3 we find (using convergent-beam electron diffraction and dark-field images) that the superlattice period is locally incommensurate with respect to the parent lattice, and that the superlattice orientation possesses significant local variations. This suggests that local electron-lattice coupling never overwhelmingly dominates the rich physics of manganites, even in the most extreme scenarios that produce the largest colossal magnetoresistance effects. △ Less

Submitted 30 January, 2008; originally announced January 2008.

Comments: 9 pages, 4 figures; accepted in Physical Review B

Journal ref: Phys. Rev. B 77, 092411 (2008)

Valley interference effects on a donor electron close to a Si/SiO2 interface

Authors: M. J. Calderon, Belita Koiller, S. Das Sarma

Abstract: We analyze the effects of valley interference on the quantum control and manipulation of an electron bound to a donor close to a Si/SiO2 interface as a function of the valley-orbit coupling at the interface. We find that, for finite valley-orbit coupling, the tunneling times involved in shuttling the electron between the donor and the interface oscillate with the interface/donor distance in much… ▽ More We analyze the effects of valley interference on the quantum control and manipulation of an electron bound to a donor close to a Si/SiO2 interface as a function of the valley-orbit coupling at the interface. We find that, for finite valley-orbit coupling, the tunneling times involved in shuttling the electron between the donor and the interface oscillate with the interface/donor distance in much the same way as the exchange coupling oscillates with the interdonor distance. These oscillations disappear when the ground state at the interface is degenerate (corresponding to zero valley-orbit coupling). △ Less

Submitted 11 December, 2007; originally announced December 2007.

Comments: 7 pages, 5 figures

Journal ref: Phys. Rev. B 77, 155302 (2008)

Magnetoresistance in an all-manganite heterostructure

Authors: J. Salafranca, M. J. Calderon, L. Brey

Abstract: We study the magnetic and transport properties of all-manganite heterostructures consisting of ferromagnetic metallic electrodes separated by an antiferromagnetic barrier. We find that the magnetic ordering in the barrier is influenced by the relative orientation of the electrodes magnetization producing a large difference in resistance between the parallel and antiparallel orientations of the f… ▽ More We study the magnetic and transport properties of all-manganite heterostructures consisting of ferromagnetic metallic electrodes separated by an antiferromagnetic barrier. We find that the magnetic ordering in the barrier is influenced by the relative orientation of the electrodes magnetization producing a large difference in resistance between the parallel and antiparallel orientations of the ferromagnetic layers. The external application of a magnetic field in a parallel configuration also leads to large magnetoresistance. △ Less

Submitted 24 September, 2007; originally announced September 2007.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 77, 014441 (2008)

The current spin on manganites

Authors: C. Israel, M. J. Calderón, N. D. Mathur

Abstract: In a material, the existence and coexistence of phases with very different magnetic and electronic properties is both unusual and surprising. Manganites in particular capture the imagination because they demonstrate a complexity that belies their chemically single-phase nature. This complexity arises because the magnetic, electronic and crystal structures interact with one another to deliver exo… ▽ More In a material, the existence and coexistence of phases with very different magnetic and electronic properties is both unusual and surprising. Manganites in particular capture the imagination because they demonstrate a complexity that belies their chemically single-phase nature. This complexity arises because the magnetic, electronic and crystal structures interact with one another to deliver exotic magnetic and electronic phases that coexist. This coexistence is self-organized and yet readily susceptible to external perturbations, permitting subtle and imaginative experiments of the type that we describe here. Moreover, these experiments reveal that each competing phase itself remains an incompletely solved mystery. △ Less

Submitted 5 July, 2007; originally announced July 2007.

Comments: invited review for Materials Today (October 2007 issue), 18 pages, 8 figures

Journal ref: Materials Today 10, 24 (2007)

Reliability of the Heitler-London approach for the exchange coupling between electrons in semiconductor nanostructures

Authors: A. L. Saraiva, M. J. Calderon, Belita Koiller

Abstract: We calculate the exchange coupling J between electrons in a double-well potential in a two-dimensional semiconductor environment within the Heitler-London (HL) approach. Two functional forms are considered for the double-well potential. We show that by choosing an appropriate and relatively simple single-electron variational wave function it is possible, within the HL approach, to significantly… ▽ More We calculate the exchange coupling J between electrons in a double-well potential in a two-dimensional semiconductor environment within the Heitler-London (HL) approach. Two functional forms are considered for the double-well potential. We show that by choosing an appropriate and relatively simple single-electron variational wave function it is possible, within the HL approach, to significantly improve the estimates for J. In all cases the present scheme overcomes the artifacts and limitations at short interdot distances, previously attributed to the HL method, where unphysical triplet ground states have been found, and leads to an overall agreement with analytic interpolated expressions for J obtained for a donor-type model potential. △ Less

Submitted 28 November, 2007; v1 submitted 22 June, 2007; originally announced June 2007.

Comments: 5 pages, 4 Postscript figures, to be published in Phys. Rev. B

Journal ref: Phys. Rev. B 76, 233302 (2007)

External field control of donor electron exchange at the Si/SiO2 interface

Authors: M. J. Calderon, Belita Koiller, S. Das Sarma

Abstract: We analyze several important issues for the single- and two-qubit operations in Si quantum computer architectures involving P donors close to a SiO2 interface. For a single donor, we investigate the donor-bound electron manipulation (i.e. 1-qubit operation) between the donor and the interface by electric and magnetic fields. We establish conditions to keep a donor-bound state at the interface in… ▽ More We analyze several important issues for the single- and two-qubit operations in Si quantum computer architectures involving P donors close to a SiO2 interface. For a single donor, we investigate the donor-bound electron manipulation (i.e. 1-qubit operation) between the donor and the interface by electric and magnetic fields. We establish conditions to keep a donor-bound state at the interface in the absence of local surface gates, and estimate the maximum planar density of donors allowed to avoid the formation of a 2-dimensional electron gas at the interface. We also calculate the times involved in single electron shuttling between the donor and the interface. For a donor pair, we find that under certain conditions the exchange coupling (i.e. 2-qubit operation) between the respective electron pair at the interface may be of the same order of magnitude as the coupling in GaAs-based two-electron double quantum dots where coherent spin manipulation and control has been recently demonstrated (for example for donors ~10 nm below the interface and \~40 nm apart, J~10^{-4} meV), opening the perspective for similar experiments to be performed in Si. △ Less

Submitted 19 March, 2007; v1 submitted 4 December, 2006; originally announced December 2006.

Comments: 11 pages, 15 figures. Changes in Eq. 24 plus minor typos

Journal ref: Phys. Rev. B 75, 125311 (2007)

Re-entrant ferromagnetism in a generic class of diluted magnetic semiconductors

Authors: M. J. Calderon, S. Das Sarma

Abstract: Considering a general situation where a semiconductor is doped by magnetic impurities leading to a carrier-induced ferromagnetic exchange coupling between the impurity moments, we show theoretically the possible generic existence of three ferromagnetic transition temperatures, T_1 > T_2 > T_3, with two distinct ferromagnetic regimes existing for T_1 > T > T_2 and T < T_3. Such an intriguing re-e… ▽ More Considering a general situation where a semiconductor is doped by magnetic impurities leading to a carrier-induced ferromagnetic exchange coupling between the impurity moments, we show theoretically the possible generic existence of three ferromagnetic transition temperatures, T_1 > T_2 > T_3, with two distinct ferromagnetic regimes existing for T_1 > T > T_2 and T < T_3. Such an intriguing re-entrant ferromagnetism, with a paramagnetic phase (T_2 > T > T_3) between two ferromagnetic phases, arises from a subtle competition between indirect exchange induced by thermally activated carriers in an otherwise empty conduction band versus the exchange coupling existing in the impurity band due to the bound carriers themselves. We comment on the possibility of observing such a re-entrance phenomenon in diluted magnetic semiconductors and magnetic oxides. △ Less

Submitted 14 November, 2006; originally announced November 2006.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B 75, 235203 (2007)

Single electron spin and its coherence in Si quantum computer architecture

Authors: M. J. Calderon, Belita Koiller, S. Das Sarma

Abstract: The possibility of performing single spin measurements in Si-based quantum computers through electric field control of electrons bound to double donors near a barrier interface is assessed. We find that both the required electric fields and the tunneling times involved are probably too large for practical implementations. On the other hand, operations with double donors in their first excited st… ▽ More The possibility of performing single spin measurements in Si-based quantum computers through electric field control of electrons bound to double donors near a barrier interface is assessed. We find that both the required electric fields and the tunneling times involved are probably too large for practical implementations. On the other hand, operations with double donors in their first excited state require smaller fields and faster tunneling times, and are therefore suitable for spin-to-charge conversion measurements. We also propose a measurement scheme that would render statistical (ensemble) estimates of the spin coherence at the Si/SiO2 interface. △ Less

Submitted 3 October, 2006; originally announced October 2006.

Comments: 4 pages, 3 figures

Journal ref: Physical Review B 75, 161304(R) (2007).

Theory of carrier mediated ferromagnetism in dilute magnetic oxides

Authors: M. J. Calderon, S. Das Sarma

Abstract: We analyze the origin of ferromagnetism as a result of carrier mediation in diluted magnetic oxide semiconductors in the light of the experimental evidence reported in the literature. We propose that a combination of percolation of magnetic polarons at lower temperature and Ruderman-Kittel-Kasuya-Yosida ferromagnetism at higher temperature may be the reason for the very high critical temperature… ▽ More We analyze the origin of ferromagnetism as a result of carrier mediation in diluted magnetic oxide semiconductors in the light of the experimental evidence reported in the literature. We propose that a combination of percolation of magnetic polarons at lower temperature and Ruderman-Kittel-Kasuya-Yosida ferromagnetism at higher temperature may be the reason for the very high critical temperatures measured (up to ~700 K). △ Less

Submitted 11 December, 2006; v1 submitted 7 March, 2006; originally announced March 2006.

Comments: 10 pages, 3 figures; formulae and references added, discussion extended

Journal ref: Annals of Physics 322, 2618 (2007).

Mean field theory for double-perovskites

Authors: L. Brey, M. J. Calderon, S. Das Sarma, F. Guinea

Abstract: A mean field approximation of a model for double perovskites that takes into account the coupling between itinerant electron spins and localized spins is developed. As in previously reported theoretical results, and contrary to experimental observation, the critical temperature is suppressed for large electron density. An effective Heisenberg model reveals the cause of this discrepancy: the comp… ▽ More A mean field approximation of a model for double perovskites that takes into account the coupling between itinerant electron spins and localized spins is developed. As in previously reported theoretical results, and contrary to experimental observation, the critical temperature is suppressed for large electron density. An effective Heisenberg model reveals the cause of this discrepancy: the competition between degenerate antiferromagnetic and ferromagnetic channels. This degeneracy can be broken by the inclusion of a Hubbard-type U term. It is therefore suggested that electron correlation effects need to be incorporated in the minimal model of double perovskites in order to explain the experimental observation of increasing ferromagnetic critical temperature with increasing electron do**. △ Less

Submitted 6 March, 2006; originally announced March 2006.

Comments: 8 pages, including 4 figures

Journal ref: Phys. Rev. B 74, 094429 (2006)