Showing 1–8 of 8 results for author: Cain, T A

Full-permutation dynamical decoupling in triple-quantum-dot spin qubits

Authors: Bo Sun, Teresa Brecht, Bryan Fong, Moonmoon Akmal, Jacob Z. Blumoff, Tyler A. Cain, Faustin W. Carter, Dylan H. Finestone, Micha N. Fireman, Wonill Ha, Anthony T. Hatke, Ryan M. Hickey, Clayton A. C. Jackson, Ian Jenkins, Aaron M. Jones, Andrew Pan, Daniel R. Ward, Aaron J. Weinstein, Samuel J. Whiteley, Parker Williams, Matthew G. Borselli, Matthew T. Rakher, Thaddeus D. Ladd

Abstract: Dynamical decoupling of spin qubits in silicon can enhance fidelity and be used to extract the frequency spectra of noise processes. We demonstrate a full-permutation dynamical decoupling technique that cyclically exchanges the spins in a triple-dot qubit. This sequence not only suppresses both low frequency charge-noise- and magnetic-noise-induced errors; it also refocuses leakage errors to first… ▽ More Dynamical decoupling of spin qubits in silicon can enhance fidelity and be used to extract the frequency spectra of noise processes. We demonstrate a full-permutation dynamical decoupling technique that cyclically exchanges the spins in a triple-dot qubit. This sequence not only suppresses both low frequency charge-noise- and magnetic-noise-induced errors; it also refocuses leakage errors to first order, which is particularly interesting for encoded exchange-only qubits. For a specific construction, which we call NZ1y, the qubit is isolated from error sources to such a degree that we measure a remarkable exchange pulse error of $5\times10^{-5}$. This sequence maintains a quantum state for roughly 18,000 exchange pulses, extending the qubit coherence from $T_2^*=2~μ$s to $T_2 = 720~μ$s. We experimentally validate an error model that includes $1/f$ charge noise and $1/f$ magnetic noise in two ways: by direct exchange-qubit simulation, and by integration of the assumed noise spectra with derived filter functions, both of which reproduce the measured error and leakage with respect to changing the repetition rate. △ Less

Submitted 7 September, 2022; v1 submitted 24 August, 2022; originally announced August 2022.

Comments: 12 pages, 4 figures

Dichotomy of the transport coefficients of correlated electron liquids in SrTiO3

Authors: Tyler A. Cain, Evgeny Mikheev, Clayton A. Jackson, Susanne Stemmer

Abstract: We discuss the Seebeck coefficient and the Hall mobility of electrons confined in narrow SrTiO3 quantum wells as a function of the three-dimensional carrier density and temperature. The quantum wells contain a fixed sheet carrier density of ~ 7x10^14 cm^-2 and their thickness is varied. At high temperatures, both properties exhibit apparent Fermi liquid behavior. In particular, the Seebeck coeffic… ▽ More We discuss the Seebeck coefficient and the Hall mobility of electrons confined in narrow SrTiO3 quantum wells as a function of the three-dimensional carrier density and temperature. The quantum wells contain a fixed sheet carrier density of ~ 7x10^14 cm^-2 and their thickness is varied. At high temperatures, both properties exhibit apparent Fermi liquid behavior. In particular, the Seebeck coefficient increases nearly linearly with temperature (T) when phonon drag contributions are minimized, while the mobility decreases proportional to T^2. Furthermore, the Seebeck coefficient scales inversely with the Fermi energy (decreasing quantum well thickness). In contrast, the transport scattering rate is independent of the Fermi energy, which is inconsistent with a Fermi liquid. At low temperatures, the Seebeck coefficient deviates from the linear temperature dependence for those electron liquids that exhibit a correlation-induced pseudogap, indicating a change in the energy dependence of the scattering rate. The implications for describing transport in strongly correlated materials are discussed. △ Less

Submitted 14 September, 2016; originally announced September 2016.

Comments: 18 pages, 4 figures

Separation of transport lifetimes in SrTiO3-based two-dimensional electron liquids

Authors: Evgeny Mikheev, Christopher R. Freeze, Brandon J. Isaac, Tyler A. Cain, Susanne Stemmer

Abstract: Deviations from Landau Fermi liquid behavior are ubiquitous features of the normal state of unconventional superconductors. Despite several decades of investigation, the underlying mechanisms of these properties are still not completely understood. In this work, we show that two-dimensional electron liquids at SrTiO3/RTiO3 (R = Gd or Sm) interfaces reveal strikingly similar physics. Analysis of Ha… ▽ More Deviations from Landau Fermi liquid behavior are ubiquitous features of the normal state of unconventional superconductors. Despite several decades of investigation, the underlying mechanisms of these properties are still not completely understood. In this work, we show that two-dimensional electron liquids at SrTiO3/RTiO3 (R = Gd or Sm) interfaces reveal strikingly similar physics. Analysis of Hall and resistivity data show a clear separation of transport and Hall scattering rates, also known as "two-lifetime" behavior. This framework gives a remarkably simple and general description of the temperature dependence of the Hall coefficient. Distinct transport lifetimes accurately describe the transport phenomena irrespective of the nature of incipient magnetic ordering, the degree of disorder, confinement, or the emergence of non-Fermi liquid behavior. The Hall scattering rate diverges at a critical quantum well thickness, coinciding with a quantum phase transition. Collectively, these results introduce new constraints on the existing microscopic theories of lifetime separation and point to the need for unified understanding. △ Less

Submitted 6 April, 2015; v1 submitted 15 March, 2015; originally announced March 2015.

Comments: Version accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 91, 165125 (2015)

Intrinsic Mobility Limiting Mechanisms in Lanthanum-doped Strontium Titanate

Authors: Amit Verma, Adam P. Kajdos, Tyler A. Cain, Susanne Stemmer, Debdeep Jena

Abstract: The temperature dependent Hall mobility data from La-doped SrTiO3 thin films has been analyzed and modeled considering various electron scattering mechanisms. We find that a ~6 meV transverse optical phonon (TO) deformation potential scattering mechanism is necessary to explain the dependence of transport on temperature between 10-200 K. Also, we find that the low temperature electron mobility in… ▽ More The temperature dependent Hall mobility data from La-doped SrTiO3 thin films has been analyzed and modeled considering various electron scattering mechanisms. We find that a ~6 meV transverse optical phonon (TO) deformation potential scattering mechanism is necessary to explain the dependence of transport on temperature between 10-200 K. Also, we find that the low temperature electron mobility in intrinsic (nominally undoped) SrTiO3 is limited by acoustic phonon scattering. Adding the above two scattering mechanisms to longitudinal optical phonon (LO) and ionized impurity scattering mechanisms, excellent quantitative agreement between mobility measurement and model is achieved in the whole temperature range (2-300K) and carrier concentrations ranging over a few orders of magnitude (8x1017 cm-3 - 2x1020 cm-3). △ Less

Submitted 12 May, 2014; originally announced May 2014.

Comments: Accepted for publication in Physical Review Letters

Journal ref: Phys. Rev. Lett., 112, 216601, 2014

High-density two-dimensional small polaron gas in a delta-doped Mott insulator

Authors: Daniel G. Ouellette, Pouya Moetakef, Tyler A. Cain, Jack Y. Zhang, Susanne Stemmer, David Emin, S. James Allen

Abstract: Heterointerfaces in complex oxide systems open new arenas in which to test models of strongly correlated material, explore the role of dimensionality in metal-insulator-transitions (MITs) and small polaron formation. Close to the quantum critical point Mott MITs depend on band filling controlled by random disordered substitutional do**. Delta-doped Mott insulators are potentially free of random… ▽ More Heterointerfaces in complex oxide systems open new arenas in which to test models of strongly correlated material, explore the role of dimensionality in metal-insulator-transitions (MITs) and small polaron formation. Close to the quantum critical point Mott MITs depend on band filling controlled by random disordered substitutional do**. Delta-doped Mott insulators are potentially free of random disorder and introduce a new arena in which to explore the effect of electron correlations and dimensionality. Epitaxial films of the prototypical Mott insulator GdTiO3 are delta-doped by substituting a single (GdO)+1 plane with a monolayer of charge neutral SrO to produce a two-dimensional system with high planar do** density. Unlike metallic SrTiO3 quantum wells in GdTiO3 the single SrO delta-doped layer exhibits thermally activated DC and optical conductivity that agree in a quantitative manner with predictions of small polaron transport but with an extremely high two-dimensional density of polarons, ~ 7E14 cm-2 △ Less

Submitted 9 April, 2014; originally announced April 2014.

Journal ref: Scientific Reports Vol. 3, 3284 (2013)

Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti,Zr)O3 heterostructure

Authors: Adam P. Kajdos, Daniel G. Ouellette, Tyler A. Cain, Susanne Stemmer

Abstract: A two-dimensional electron gas (2DEG) in SrTiO3 is created via modulation do** by interfacing undoped SrTiO3 with a wider-band-gap material, SrTi1-xZrxO3, that is doped n-type with La. All layers are grown using hybrid molecular beam epitaxy. Using magnetoresistance measurements, we show that electrons are transferred into the SrTiO3, and a 2DEG is formed. In particular, Shubnikov-de Haas oscill… ▽ More A two-dimensional electron gas (2DEG) in SrTiO3 is created via modulation do** by interfacing undoped SrTiO3 with a wider-band-gap material, SrTi1-xZrxO3, that is doped n-type with La. All layers are grown using hybrid molecular beam epitaxy. Using magnetoresistance measurements, we show that electrons are transferred into the SrTiO3, and a 2DEG is formed. In particular, Shubnikov-de Haas oscillations are shown to depend only on the perpendicular magnetic field. Experimental Shubnikov-de Haas oscillations are compared with calculations that assume multiple occupied subbands. △ Less

Submitted 17 July, 2013; v1 submitted 16 July, 2013; originally announced July 2013.

Comments: Submitted to Applied Physics Letters

Journal ref: Appl. Phys. Lett. 103, 082120 (2013)

Modulation do** to control the high-density electron gas at a polar/non-polar oxide interface

Authors: Tyler A. Cain, Pouya Moetakef, Clayton A. Jackson, Susanne Stemmer

Abstract: A modulation-do** approach to control the carrier density of the high-density electron gas at a prototype polar/non-polar oxide interface is presented. It is shown that the carrier density of the electron gas at a GdTiO3/SrTiO3 interface can be reduced by up to 20% from its maximum value (~ 3x10^14 cm^-2) by alloying the GdTiO3 layer with Sr. The Seebeck coefficient of the two-dimensional electr… ▽ More A modulation-do** approach to control the carrier density of the high-density electron gas at a prototype polar/non-polar oxide interface is presented. It is shown that the carrier density of the electron gas at a GdTiO3/SrTiO3 interface can be reduced by up to 20% from its maximum value (~ 3x10^14 cm^-2) by alloying the GdTiO3 layer with Sr. The Seebeck coefficient of the two-dimensional electron gas increases concurrently with the decrease in its carrier density. The experimental results provide insight into the origin of charge carriers at oxide interfaces exhibiting a polar discontinuity. △ Less

Submitted 28 August, 2012; originally announced August 2012.

Comments: The article has been accepted by Applied Physics Letters. After it is published, it will be found at: http://apl.aip.org/

Electrostatic carrier do** of GdTiO3/SrTiO3 interfaces

Authors: Pouya Moetakef, Tyler A. Cain, Daniel G. Ouellette, Jack Y. Zhang, Dmitri O. Klenov, Anderson Janotti, Chris G. Van de Walle, Siddharth Rajan, S. James Allen, Susanne Stemmer

Abstract: Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3 are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately 1/2 electron per surface unit cell at each GdTiO3/SrTiO3 interface. The sheet carrier densities in all structures containing more than one unit cell of SrTiO3 are independent of layer thick… ▽ More Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3 are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately 1/2 electron per surface unit cell at each GdTiO3/SrTiO3 interface. The sheet carrier densities in all structures containing more than one unit cell of SrTiO3 are independent of layer thicknesses and growth sequences, indicating that the mobile carriers are in a high concentration, two-dimensional electron gas bound to the interface. These carrier densities closely meet the electrostatic requirements for compensating the fixed charge at these polar interfaces. Based on the experimental results, insights into interfacial band alignments, charge distribution and the influence of different electrostatic boundary conditions are obtained. △ Less

Submitted 20 November, 2011; originally announced November 2011.

Comments: The article has been accepted by Applied Physics Letters. After it is published, it will be found at http://apl.aip.org/