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Deep underground laboratory measurement of $^{13}$C($α$,$n$)$^{16}$O in the Gamow windows of the $s$- and $i$-processes
Authors:
B. Gao,
T. Y. Jiao,
Y. T. Li,
H. Chen,
W. P. Lin,
Z. An,
L. H. Ru,
Z. C. Zhang,
X. D. Tang,
X. Y. Wang,
N. T. Zhang,
X. Fang,
D. H. Xie,
Y. H. Fan,
L. Ma,
X. Zhang,
F. Bai,
P. Wang,
Y. X. Fan,
G. Liu,
H. X. Huang,
Q. Wu,
Y. B. Zhu,
J. L. Chai,
J. Q. Li
, et al. (50 additional authors not shown)
Abstract:
The $^{13}$C($α$,$n$)$^{16}$O reaction is the main neutron source for the slow-neutron-capture (s-) process in Asymptotic Giant Branch stars and for the intermediate (i-) process. Direct measurements at astrophysical energies in above-ground laboratories are hindered by the extremely small cross sections and vast cosmic-ray induced background. We performed the first consistent direct measurement i…
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The $^{13}$C($α$,$n$)$^{16}$O reaction is the main neutron source for the slow-neutron-capture (s-) process in Asymptotic Giant Branch stars and for the intermediate (i-) process. Direct measurements at astrophysical energies in above-ground laboratories are hindered by the extremely small cross sections and vast cosmic-ray induced background. We performed the first consistent direct measurement in the range of $E_{\rm c.m.}=$0.24 MeV to 1.9 MeV using the accelerators at the China **** Underground Laboratory (CJPL) and Sichuan University. Our measurement covers almost the entire i-process Gamow window in which the large uncertainty of the previous experiments has been reduced from 60\% down to 15\%, eliminates the large systematic uncertainty in the extrapolation arising from the inconsistency of existing data sets, and provides a more reliable reaction rate for the studies of the s- and i-processes along with the first direct determination of the alpha strength for the near-threshold state.
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Submitted 6 October, 2022;
originally announced October 2022.
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Current-induced magnetization switching in CoTb amorphous single layer
Authors:
R. Q. Zhang,
L. Y. Liao,
X. Z. Chen,
T. Xu,
L. Cai,
M. H. Guo,
Hao Bai,
L. Sun,
F. H. Xue,
J. Su,
X. Wang,
C. H. Wan,
Hua Bai,
Y. X. Song,
R. Y. Chen,
N. Chen,
W. J. Jiang,
X. F. Kou,
J. W. Cai,
H. Q. Wu,
F. Pan,
C. Song
Abstract:
We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density keeps almost constant. Without the need of overcoming the strong interfacial Dzyaloshinskii-Moriya interaction caused by the heavy metal, a quite low assistant…
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We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density keeps almost constant. Without the need of overcoming the strong interfacial Dzyaloshinskii-Moriya interaction caused by the heavy metal, a quite low assistant field of ~20 Oe is sufficient to realize the fully switching. The SOT effective field decreases and undergoes a sign change with the decrease of the Tb-concentration, implying that a combination of the spin Hall effect from both Co and Tb as well as an asymmetric spin current absorption accounts for the SOT switching mechanism. Our findings would advance the use of magnetic materials with bulk PMA for energy-efficient and thermal-stable non-volatile memories, and add a different dimension for understanding the ordering and asymmetry in amorphous thin films.
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Submitted 18 June, 2020;
originally announced June 2020.
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Spin-orbit torque in MgO/CoFeB/Ta/CoFeB/MgO symmetric structure with interlayer antiferromagnetic coupling
Authors:
G. Y. Shi,
C. H. Wan,
Y. S. Chang,
F. Li,
X. J. Zhou,
P. X. Zhang,
J. W. Cai,
X. F. Han,
F. Pan,
C. Song
Abstract:
Spin current generated by spin Hall effect in the heavy metal would diffuse up and down to adjacent ferromagnetic layers and exert torque on their magnetization, called spin-orbit torque. Antiferromagnetically coupled trilayers, namely the so-called synthetic antiferromagnets (SAF), are usually employed to serve as the pinned layer of spintronic devices based on spin valves and magnetic tunnel jun…
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Spin current generated by spin Hall effect in the heavy metal would diffuse up and down to adjacent ferromagnetic layers and exert torque on their magnetization, called spin-orbit torque. Antiferromagnetically coupled trilayers, namely the so-called synthetic antiferromagnets (SAF), are usually employed to serve as the pinned layer of spintronic devices based on spin valves and magnetic tunnel junctions to reduce the stray field and/or increase the pinning field. Here we investigate the spin-orbit torque in MgO/CoFeB/Ta/CoFeB/MgO perpendicularly magnetized multilayer with interlayer antiferromagnetic coupling. It is found that the magnetization of two CoFeB layers can be switched between two antiparallel states simultaneously. This observation is replicated by the theoretical calculations by solving Stoner-Wohlfarth model and Landau-Lifshitz-Gilbert equation. Our findings combine spin-orbit torque and interlayer coupling, which might advance the magnetic memories with low stray field and low power consumption.
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Submitted 17 February, 2017;
originally announced February 2017.
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Unconventional Scaling of the Anomalous Hall Effect Accompanying Electron Localization Correction in the Dirty Regime
Authors:
Y. M. Lu,
J. W. Cai,
Zaibing Guo,
X. X. Zhang
Abstract:
Scaling of the anomalous Hall conductivity to longitudinal conductivity, has been observed in the dirty regime of two-dimensional weak and strong localization regions in ultrathin, polycrystalline, chemically disordered, ferromagnetic FePt films. The relationship between electron transport and temperature reveals a quantitatively insignificant Coulomb interaction in these films while the temperatu…
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Scaling of the anomalous Hall conductivity to longitudinal conductivity, has been observed in the dirty regime of two-dimensional weak and strong localization regions in ultrathin, polycrystalline, chemically disordered, ferromagnetic FePt films. The relationship between electron transport and temperature reveals a quantitatively insignificant Coulomb interaction in these films while the temperature dependent anomalous Hall conductivity experiences quantum correction from electron localization. At the onset of this correction, the low-temperature anomalous Hall resistivity begins to be saturated when the thickness of the FePt film is reduced, and the corresponding Hall conductivity scaling exponent becomes 2, which is above the recent unified theory of 1.6 (σ_AH \propto σ^1.6_xx). Our results strongly suggest that the correction of the electron localization modulates the scaling exponent of the anomalous Hall effect.
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Submitted 10 October, 2012;
originally announced October 2012.
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Translation invariant tensor product states in a finite lattice system
Authors:
J. W. Cai,
Q. N. Chen,
H. H. Zhao,
Z. Y. Xie,
M. P. Qin,
Z. C. Wei,
T. Xiang
Abstract:
We show that the matrix (or more generally tensor) product states in a finite translation invariant system can be accurately constructed from the same set of local matrices (or tensors) that are determined from an infinite lattice system in one or higher dimensions. This provides an efficient approach for studying translation invariant tensor product states in finite lattice systems. Two methods a…
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We show that the matrix (or more generally tensor) product states in a finite translation invariant system can be accurately constructed from the same set of local matrices (or tensors) that are determined from an infinite lattice system in one or higher dimensions. This provides an efficient approach for studying translation invariant tensor product states in finite lattice systems. Two methods are introduced to determine these size-independent local tensors.
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Submitted 9 November, 2010;
originally announced November 2010.
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Renormalization of tensor-network states
Authors:
H. H. Zhao,
Z. Y. Xie,
Q. N. Chen,
Z. C. Wei,
J. W. Cai,
T. Xiang
Abstract:
We have discussed the tensor-network representation of classical statistical or interacting quantum lattice models, and given a comprehensive introduction to the numerical methods we recently proposed for studying the tensor-network states/models in two dimensions. A second renormalization scheme is introduced to take into account the environment contribution in the calculation of the partition…
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We have discussed the tensor-network representation of classical statistical or interacting quantum lattice models, and given a comprehensive introduction to the numerical methods we recently proposed for studying the tensor-network states/models in two dimensions. A second renormalization scheme is introduced to take into account the environment contribution in the calculation of the partition function of classical tensor network models or the expectation values of quantum tensor network states. It improves significantly the accuracy of the coarse grained tensor renormalization group method. In the study of the quantum tensor-network states, we point out that the renormalization effect of the environment can be efficiently and accurately described by the bond vector. This, combined with the imaginary time evolution of the wavefunction, provides an accurate projection method to determine the tensor-network wavfunction. It reduces significantly the truncation error and enable a tensor-network state with a large bond dimension, which is difficult to be accessed by other methods, to be accurately determined.
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Submitted 26 April, 2010; v1 submitted 6 February, 2010;
originally announced February 2010.
