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GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
Authors:
Yannick De Koninck,
Charles Caer,
Didit Yudistira,
Marina Baryshnikova,
Huseyin Sar,
**-Yi Hsieh,
Saroj Kanta Patra,
Nadezda Kuznetsova,
Davide Colucci,
Alexey Milenin,
Andualem Ali Yimam,
Geert Morthier,
Dries Van Thourhout,
Peter Verheyen,
Marianna Pantouvaki,
Bernardette Kunert,
Joris Van Campenhout
Abstract:
Silicon photonics is a rapidly develo** technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors hampering its widespread adoption. Despite significant progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integratio…
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Silicon photonics is a rapidly develo** technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors hampering its widespread adoption. Despite significant progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxial growth of III-V materials remains the pinnacle in realizing cost-effective on-chip light sources. Here, we report the first electrically driven GaAs-based multi-quantum-well laser diodes fully fabricated on 300 mm Si wafers in a CMOS pilot manufacturing line. GaAs nano-ridge waveguides with embedded p-i-n diodes, InGaAs quantum wells and InGaP passivation layers are grown with high quality at wafer scale, leveraging selective-area epitaxy with aspect-ratio trap**. After III-V facet patterning and standard CMOS contact metallization, room-temperature continuous-wave lasing is demonstrated at wavelengths around 1020 nm in more than three hundred devices across a wafer, with threshold currents as low as 5 mA, output powers beyond 1 mW, laser linewidths down to 46 MHz, and laser operation up to 55 °C. These results illustrate the potential of the III-V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond.
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Submitted 20 July, 2023;
originally announced September 2023.
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In-Situ 3D Nano-Printing of Freeform Coupling Elements for Hybrid Photonic Integration
Authors:
P. -I. Dietrich,
M. Blaicher,
I. Reuter,
M. Billah,
T. Hoose,
A. Hofmann,
C. Caer,
R. Dangel,
B. Offrein,
U. Troppenz,
W. Freude,
C. Koos
Abstract:
Hybrid photonic integration exploits complementary strengths of different material platforms, thereby offering superior performance and design flexibility in comparison to monolithic approaches. This applies in particular to multi-chip concepts, where components can be individually optimized and tested on separate dies before integration into more complex systems. The assembly of such systems, how…
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Hybrid photonic integration exploits complementary strengths of different material platforms, thereby offering superior performance and design flexibility in comparison to monolithic approaches. This applies in particular to multi-chip concepts, where components can be individually optimized and tested on separate dies before integration into more complex systems. The assembly of such systems, however, still represents a major challenge, requiring complex and expensive processes for high-precision alignment as well as careful adaptation of optical mode profiles. Here we show that these challenges can be overcome by in-situ nano-printing of freeform beam-sha** elements to facets of optical components. The approach is applicable to a wide variety of devices and assembly concepts and allows adaptation of vastly dissimilar mode profiles while considerably relaxing alignment tolerances to the extent that scalable, cost-effective passive assembly techniques can be used. We experimentally prove the viability of the concept by fabricating and testing a selection of beam-sha** elements at chip and fiber facets, achieving coupling efficiencies of up to 88 % between an InP laser and an optical fiber. We also demonstrate printed freeform mirrors for simultaneously adapting beam shape and propagation direction, and we explore multi-lens systems for beam expansion. The concept paves the way to automated fabrication of photonic multi-chip assemblies with unprecedented performance and versatility.
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Submitted 29 January, 2018;
originally announced February 2018.
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High-finesse Fabry-Perot cavities with bidimensional Si$_3$N$_4$ photonic-crystal slabs
Authors:
Xu Chen,
Clément Chardin,
Kevin Makles,
Charles Caër,
Sheon Chua,
Rémy Braive,
Isabelle Robert-Philip,
Tristan Briant,
Pierre-Francois Cohadon,
Antoine Heidmann,
Thibaut Jacqmin,
Samuel Deléglise
Abstract:
Light scattering by a two-dimensional photonic crystal slab (PCS) can result in dramatic interference effects associated with Fano resonances. Such devices offer appealing alternatives to distributed Bragg reflectors or filters for various applications such as optical wavelength and polarization filters, reflectors, semiconductor lasers, photodetectors, bio-sensors, or non-linear optical component…
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Light scattering by a two-dimensional photonic crystal slab (PCS) can result in dramatic interference effects associated with Fano resonances. Such devices offer appealing alternatives to distributed Bragg reflectors or filters for various applications such as optical wavelength and polarization filters, reflectors, semiconductor lasers, photodetectors, bio-sensors, or non-linear optical components. Suspended PCSs also find natural applications in the field of optomechanics, where the mechanical modes of a suspended slab interact via radiation pressure with the optical field of a high finesse cavity. The reflectivity and transmission properties of a defect-free suspended PCS around normal incidence can be used to couple out-of-plane mechanical modes to an optical field by integrating it in a free space cavity. Here, we demonstrate the successful implementation of a PCS reflector on a high-tensile stress Si$_3$N$_4$ nanomembrane. We illustrate the physical process underlying the high reflectivity by measuring the photonic crystal band diagram. Moreover, we introduce a clear theoretical description of the membrane scattering properties in the presence of optical losses. By embedding the PCS inside a high-finesse cavity, we fully characterize its optical properties. The spectrally, angular, and polarization resolved measurements demonstrate the wide tunability of the membrane's reflectivity, from nearly 0 to 99.9470~$\pm$ 0.0025 \%, and show that material absorption is not the main source of optical loss. Moreover, the cavity storage time demonstrated in this work exceeds the mechanical period of low-order mechanical drum modes. This so-called resolved sideband condition is a prerequisite to achieve quantum control of the mechanical resonator with light.
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Submitted 13 June, 2016; v1 submitted 23 March, 2016;
originally announced March 2016.
