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Single-Spin Readout and Quantum Sensing using Optomechanically Induced Transparency
Authors:
Martin Koppenhöfer,
Carl Padgett,
Jeffrey V. Cady,
Viraj Dharod,
Hyunseok Oh,
Ania C. Bleszynski Jayich,
A. A. Clerk
Abstract:
Solid-state spin defects are promising quantum sensors for a large variety of sensing targets. Some of these defects couple appreciably to strain in the host material. We propose to use this strain coupling for mechanically-mediated dispersive single-shot spin readout by an optomechanically-induced transparency measurement. Surprisingly, the estimated measurement times for negatively-charged silic…
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Solid-state spin defects are promising quantum sensors for a large variety of sensing targets. Some of these defects couple appreciably to strain in the host material. We propose to use this strain coupling for mechanically-mediated dispersive single-shot spin readout by an optomechanically-induced transparency measurement. Surprisingly, the estimated measurement times for negatively-charged silicon-vacancy defects in diamond are an order of magnitude shorter than those for single-shot optical fluorescence readout. Our scheme can also be used for general parameter-estimation metrology and offers a higher sensitivity than conventional schemes using continuous position detection.
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Submitted 11 April, 2023; v1 submitted 2 December, 2022;
originally announced December 2022.
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Diamond optomechanical crystals with embedded nitrogen-vacancy centers
Authors:
Jeffrey V Cady,
Ohad Michel,
Kenneth W Lee,
Rishi N Patel,
Christopher J Sarabalis,
Amir H Safavi-Naeni,
Ania C Bleszynski Jayich
Abstract:
Hybrid quantum devices, in which disparate quantum elements are combined in order to achieve enhanced functionality, have received much attention in recent years due to their exciting potential to address key problems in quantum information processing, communication, and control. Specifically, significant progress has been made in the field of hybrid mechanical devices, in which a qubit is coupled…
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Hybrid quantum devices, in which disparate quantum elements are combined in order to achieve enhanced functionality, have received much attention in recent years due to their exciting potential to address key problems in quantum information processing, communication, and control. Specifically, significant progress has been made in the field of hybrid mechanical devices, in which a qubit is coupled to a mechanical oscillator. Strong coupling in such devices has been demonstrated with superconducting qubits, and coupling defect qubits to mechanical elements via crystal strain has enabled novel methods of qubit measurement and control. In this paper we demonstrate the fabrication of diamond optomechanical crystals with embedded nitrogen-vacancy (NV) centers, a preliminary step toward reaching the quantum regime with defect qubit hybrid mechanical devices. We measure optical and mechanical resonances of diamond optomechanical crystals as well as the spin coherence of single embedded NV centers. We find that the spin has long coherence times $T_2^* = 1.5 μs$ and $T_2 = 72 μs$ despite its proximity to nanofabricated surfaces. Finally, we discuss potential improvements of these devices and prospects for future experiments in the quantum regime.
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Submitted 10 November, 2018;
originally announced November 2018.
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Strong Coupling of a Single Electron in Silicon to a Microwave Photon
Authors:
X. Mi,
J. V. Cady,
D. M. Zajac,
P. W. Deelman,
J. R. Petta
Abstract:
Silicon is vital to the computing industry due to the high quality of its native oxide and well-established do** technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the ph…
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Silicon is vital to the computing industry due to the high quality of its native oxide and well-established do** technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots.
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Submitted 8 March, 2017;
originally announced March 2017.
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Circuit Quantum Electrodynamics Architecture for Gate-Defined Quantum Dots in Silicon
Authors:
X. Mi,
J. V. Cady,
D. M. Zajac,
J. Stehlik,
L. F. Edge,
J. R. Petta
Abstract:
We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5,400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of t…
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We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5,400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate g_c/2pi = 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon.
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Submitted 9 February, 2017; v1 submitted 18 October, 2016;
originally announced October 2016.
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Topical Review: Spins and mechanics in diamond
Authors:
Donghun Lee,
Kenneth W. Lee,
Jeffrey V. Cady,
Preeti Ovartchaiyapong,
Ania C. Bleszynski Jayich
Abstract:
There has been rapidly growing interest in hybrid quantum devices involving a solid-state spin and a macroscopic mechanical oscillator. Such hybrid devices create exciting opportunities to mediate interactions between disparate qubits and to explore the quantum regime of macroscopic mechanical objects. In particular, a system consisting of the nitrogen-vacancy defect center in diamond coupled to a…
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There has been rapidly growing interest in hybrid quantum devices involving a solid-state spin and a macroscopic mechanical oscillator. Such hybrid devices create exciting opportunities to mediate interactions between disparate qubits and to explore the quantum regime of macroscopic mechanical objects. In particular, a system consisting of the nitrogen-vacancy defect center in diamond coupled to a high quality factor mechanical oscillator is an appealing candidate for such a hybrid quantum device, as it utilizes the highly coherent and versatile spin properties of the defect center. In this paper, we will review recent experimental progress on diamond-based hybrid quantum devices in which the spin and orbital dynamics of single defects are driven by the motion of a mechanical oscillator. In addition, we discuss prospective applications for this device, including long range, phonon-mediated spin-spin interactions, and phonon cooling in the quantum regime. We conclude the review by evaluating the experimental limitations of current devices and identifying alternative device architectures that may reach the strong coupling regime.
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Submitted 5 December, 2016; v1 submitted 1 September, 2016;
originally announced September 2016.
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Investigation of Mobility Limiting Mechanisms in Undoped Si/SiGe Heterostructures
Authors:
X. Mi,
T. M. Hazard,
C. Payette,
K. Wang,
D. M. Zajac,
J. V. Cady,
J. R. Petta
Abstract:
We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms in this increasingly important materials system. By analyzing data from 26 wafers with different heterostructure growth profiles we observe a strong correlation between the background oxygen concentration in…
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We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms in this increasingly important materials system. By analyzing data from 26 wafers with different heterostructure growth profiles we observe a strong correlation between the background oxygen concentration in the Si quantum well and the maximum mobility. The highest quality wafer supports a 2DEG with a mobility of 160,000 cm^2/Vs at a density 2.17 x 10^11/cm^2 and exhibits a metal-to-insulator transition at a critical density 0.46 x 10^11/cm^2. We extract a valley splitting of approximately 150 microeV at a magnetic field of 1.8 T. These results provide evidence that undoped Si/SiGe heterostructures are suitable for the fabrication of few-electron quantum dots.
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Submitted 19 March, 2015;
originally announced March 2015.
