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The VISTA Variables in the Vía Láctea eXtended (VVVX) ESO public survey: Completion of the observations and legacy
Authors:
R. K. Saito,
M. Hempel,
J. Alonso-García,
P. W. Lucas,
D. Minniti,
S. Alonso,
L. Baravalle,
J. Borissova,
C. Caceres,
A. N. Chené,
N. J. G. Cross,
F. Duplancic,
E. R. Garro,
M. Gómez,
V. D. Ivanov,
R. Kurtev,
A. Luna,
D. Majaess,
M. G. Navarro,
J. B. Pullen,
M. Rejkuba,
J. L. Sanders,
L. C. Smith,
P. H. C. Albino,
M. V. Alonso
, et al. (121 additional authors not shown)
Abstract:
The ESO public survey VISTA Variables in the Vía Láctea (VVV) surveyed the inner Galactic bulge and the adjacent southern Galactic disk from $2009-2015$. Upon its conclusion, the complementary VVV eXtended (VVVX) survey has expanded both the temporal as well as spatial coverage of the original VVV area, widening it from $562$ to $1700$ sq. deg., as well as providing additional epochs in…
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The ESO public survey VISTA Variables in the Vía Láctea (VVV) surveyed the inner Galactic bulge and the adjacent southern Galactic disk from $2009-2015$. Upon its conclusion, the complementary VVV eXtended (VVVX) survey has expanded both the temporal as well as spatial coverage of the original VVV area, widening it from $562$ to $1700$ sq. deg., as well as providing additional epochs in $JHK_{\rm s}$ filters from $2016-2023$. With the completion of VVVX observations during the first semester of 2023, we present here the observing strategy, a description of data quality and access, and the legacy of VVVX. VVVX took $\sim 2000$ hours, covering about 4% of the sky in the bulge and southern disk. VVVX covered most of the gaps left between the VVV and the VISTA Hemisphere Survey (VHS) areas and extended the VVV time baseline in the obscured regions affected by high extinction and hence hidden from optical observations. VVVX provides a deep $JHK_{\rm s}$ catalogue of $\gtrsim 1.5\times10^9$ point sources, as well as a $K_{\rm s}$ band catalogue of $\sim 10^7$ variable sources. Within the existing VVV area, we produced a $5D$ map of the surveyed region by combining positions, distances, and proper motions of well-understood distance indicators such as red clump stars, RR Lyrae, and Cepheid variables. In March 2023 we successfully finished the VVVX survey observations that started in 2016, an accomplishment for ESO Paranal Observatory upon 4200 hours of observations for VVV+VVVX. The VVV+VVVX catalogues complement those from the Gaia mission at low Galactic latitudes and provide spectroscopic targets for the forthcoming ESO high-multiplex spectrographs MOONS and 4MOST.
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Submitted 24 June, 2024;
originally announced June 2024.
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High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip-enhanced Photoluminescence
Authors:
Anis Chiout,
Agnès Tempez,
Thomas Carlier,
Marc Chaigneau,
Fabian Cadiz,
Alistair Rowe,
Biyuan Zheng,
Anlian Pan,
Marco Pala,
Fabrice Oehler,
Abdelkarim Ouerghi,
Julien Chaste
Abstract:
Straintronics involves the manipulation and regulation of the electronic characteristics of 2D materials through the use of macro- and nano-scale strain engineering. In this study, we utilized an atomic force microscope (AFM) coupled with an optical system to perform indentation measurements and tip-enhanced photoluminescence (TEPL), allowing us to extract the local optical response of a suspended…
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Straintronics involves the manipulation and regulation of the electronic characteristics of 2D materials through the use of macro- and nano-scale strain engineering. In this study, we utilized an atomic force microscope (AFM) coupled with an optical system to perform indentation measurements and tip-enhanced photoluminescence (TEPL), allowing us to extract the local optical response of a suspended monolayer membrane of ternary WSSe at various levels of deformation, up to strains of 10%. The photoluminescence signal is modelled considering the deformation, stress distribution and strain dependence of the WSSe band structure. We observe an additional TEPL signal that exhibits significant variation under strain, with 64 meV per percent of elongation. This peak is linked to the highly strained 2D material lying right underneath the tip. We discuss the amplification of the signal and its relation to the excitonic funnelling effect in a more comprehensive model. We will also compare the diffusion caused by Auger recombination against the radiative excitonic decay. We use TEPL to examine and comprehend the local physics of 2D semi-conducting materials subjected to extreme mechanical strain. Chemical vapour deposition-fabricated 2D ternaries possess high strain resistance, comparable to the benchmark MoS2, and a high Young's modulus of 273 GPa.
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Submitted 5 February, 2024;
originally announced February 2024.
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A systematic study of spin-dependent recombination in GaAs$_{1-x}$N$_x$ as a function of nitrogen content
Authors:
A. C. Ulibarri,
R. Kothari,
A. Garcia,
J. C. Harmand,
S. Park,
F. Cadiz,
J. Peretti,
A. C. H. Rowe
Abstract:
A systematic study of spin-dependent recombination (SDR) under steady-state optical pum** conditions in dilute nitride semiconductors as a function of nitrogen content is reported. The alloy content is determined by a fit of the photoluminescence (PL) intensity using a Roosbroeck-Shockley relation and verified by a study of the GaN-like LO$_2$ phonon peak in a Raman spectroscopy map. PL spectra…
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A systematic study of spin-dependent recombination (SDR) under steady-state optical pum** conditions in dilute nitride semiconductors as a function of nitrogen content is reported. The alloy content is determined by a fit of the photoluminescence (PL) intensity using a Roosbroeck-Shockley relation and verified by a study of the GaN-like LO$_2$ phonon peak in a Raman spectroscopy map. PL spectra taken from alloys of the form GaAs$_{1-x}$N$_x$ where $0.022 < x < 0.036$ exhibit PL intensity increases when switching from a linearly- to a circularly-polarized pump up to a factor of 5 for $x = 0.022$. This work used a 1.39 eV laser with a radius of 0.6 $μ$m. The observed SDR ratio monotonically decreases with increasing $x$, reaching 1.5 for $x = 0.036$. Moreover, the excitation power required to obtain maximum SDR systematically increases with increasing $x$, varying from 0.6 mW for $x = 0.022$ to 15 mW for $x = 0.036$. These observations are consistent with an increase in the density of electronically active defects with increasing nitrogen content, both those responsible for the SDR as well as other, standard Shockley-Read-Hall (SRH) centers.
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Submitted 18 August, 2022;
originally announced August 2022.
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Towards Maximizing a Perceptual Sweet Spot
Authors:
Pedro Izquierdo Lehmann,
Rodrigo F. Cadiz,
Carlos A. Sing Long
Abstract:
The sweet spot can be interpreted as the region where acoustic sources create a spatial auditory illusion. We study the problem of maximizing this sweet spot when reproducing a desired sound wave using an array of loudspeakers. To achieve this, we introduce a theoretical framework for spatial sound perception that can be used to define a sweet spot, and we develop a method that aims to generate a…
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The sweet spot can be interpreted as the region where acoustic sources create a spatial auditory illusion. We study the problem of maximizing this sweet spot when reproducing a desired sound wave using an array of loudspeakers. To achieve this, we introduce a theoretical framework for spatial sound perception that can be used to define a sweet spot, and we develop a method that aims to generate a sound wave that directly maximizes the sweet spot defined by a model within this framework. Our method aims to incorporate perceptual principles from the onset and is flexible: while it imposes little to no constraints on the regions of interest, the arrangement of loudspeakers or their radiation pattern, it allows for audio perception models that include state-of-the-art monaural perceptual models. Proof-of-concept experiments show that our method outperforms state-of-the-art methods when comparing them in terms of their localization and coloration properties.
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Submitted 3 May, 2022; v1 submitted 5 January, 2022;
originally announced January 2022.
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Anomalous ambipolar transport in depleted GaAs nanowires
Authors:
H. Hijazi,
D. Paget,
A C. H. Rowe,
G. Monier,
K. Lahlil,
E. Gil,
A. Trassoudaine,
F. Cadiz,
Y. André,
C. Robert-Goumet
Abstract:
We have used a polarized microluminescence technique to investigate photocarrier charge and spin transport in n-type depleted GaAs nanowires ($ \approx 10^{17}$ cm$^{-3}$ do** level). At 6K, a long-distance tail appears in the luminescence spatial profile, indicative of charge and spin transport, only limited by the length of the NW. This tail is independent on excitation power and temperature.…
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We have used a polarized microluminescence technique to investigate photocarrier charge and spin transport in n-type depleted GaAs nanowires ($ \approx 10^{17}$ cm$^{-3}$ do** level). At 6K, a long-distance tail appears in the luminescence spatial profile, indicative of charge and spin transport, only limited by the length of the NW. This tail is independent on excitation power and temperature. Using a self-consistent calculation based on the drift-diffusion and Poisson equations as well as on photocarrier statistics (Van Roosbroeck model), it is found that this tail is due to photocarrier drift in an internal electric field nearly two orders of magnitude larger than electric fields predicted by the usual ambipolar model. This large electric field appears because of two effects. Firstly, for transport in the spatial fluctuations of the conduction band minimum and valence band maximum, the electron mobility is activated by the internal electric field. This implies, in a counter intuitive way, that the spatial fluctuations favor long distance transport. Secondly, the range of carrier transport is further increased because of the finite NW length, an effect which plays a key role in one-dimensional systems.
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Submitted 21 December, 2021;
originally announced December 2021.
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Inspection of 19 globular cluster candidates in the Galactic bulge with the VVV survey
Authors:
E. R. Garro,
D. Minniti,
M. Gómez,
J. Alonso-García,
V. Ripepi,
J. G. Fernández-Trincado,
F. Vivanco Cádiz
Abstract:
The census of the globular clusters (GCs) in the Milky Way (MW) is still a work in progress. We explore the nature of 19 new GC candidates in the Galactic bulge, based on the analysis of their colour-magnitude diagrams (CMDs) in the near-IR, using the VISTA Variables in the Via Láctea Survey (VVV) database. We estimate their main astrophysical parameters: reddening and extinction, distance, total…
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The census of the globular clusters (GCs) in the Milky Way (MW) is still a work in progress. We explore the nature of 19 new GC candidates in the Galactic bulge, based on the analysis of their colour-magnitude diagrams (CMDs) in the near-IR, using the VISTA Variables in the Via Láctea Survey (VVV) database. We estimate their main astrophysical parameters: reddening and extinction, distance, total luminosity, mean cluster proper motions (PMs), metallicity and age. We obtain the cluster catalogues including the likely cluster members by applying a decontamination procedure on the observed CMDs, based upon the vector PM diagrams from VIRAC2. We estimate a wide reddening range of the $0.25 \leqslant E(J-K_s) \leqslant 2.0$ mag and extinction $0.11 \leqslant A_{Ks} \leqslant 0.86$ mag for the sample clusters as expected in the bulge regions. The range of heliocentric distances is $6.8\leqslant D\leqslant 11.4$ kpc. This allows us to place these clusters between 0.56 and 3.25 kpc from the Galactic centre, assuming $R_{\odot}=8.2$ kpc. Also, their PMs are kinematically similar to the typical motion of the Galactic bulge, apart from VVV-CL160, which shows different PMs. We also derive their metallicities and ages, finding $-1.40 \leqslant$ [Fe/H] $\leqslant 0.0$ dex and $t\approx 8-13$ Gyr respectively. The luminosities are calculated both in $K_{s}-$ and V-bands, recovering $-3.4 \leqslant M_V \leqslant -7.5$. We also examine the possible RR Lyrae members found in the cluster fields. Based on their positions, kinematics, metallicities and ages and comparing our results with the literature, we conclude that 9 candidates are real GCs, 7 need more observations to be fully confirmed as GCs, whereas 3 candidates are discarded for being younger open clusters.
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Submitted 16 November, 2021;
originally announced November 2021.
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Enhancement of valley polarization at high photoexcited densities in MoS2 monolayers
Authors:
Fabian Cadiz,
Stefan Gerl,
Takashi Taniguchi,
Kenji Watanabe
Abstract:
We have investigated the steady-sate valley polarization and valley coherence of encapsulated MoS2 monolayer as a function of the temperature and the power density with a continuous wave laser excitation. Both valley polarization and coherence exhibit a non-monotonic dependence on sample temperature, attaining a local maximum at T=40 K. This has been recently attributed to a motional narrowing eff…
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We have investigated the steady-sate valley polarization and valley coherence of encapsulated MoS2 monolayer as a function of the temperature and the power density with a continuous wave laser excitation. Both valley polarization and coherence exhibit a non-monotonic dependence on sample temperature, attaining a local maximum at T=40 K. This has been recently attributed to a motional narrowing effect: an enhancement of the valley relaxation time occurs when the scattering rate increases. At a fixed temperature of T=6 K, a two-fold increase of the steady-state valley polarization is achieved by increasing the laser excitation power, which we attribute to a local heating induced by the energy relaxation of photoexcited excitons outside the light cone and to an increase in the exciton-exciton scattering rate. In contrast, in the same power range only a moderate enhancement of valley coherence is observed. Further increasing the excitation power leads to a small reduction of valley polarization but a dramatic loss of valley coherence. Supported by spatial imaging of the excitonic luminescence and polarization, we attribute this behaviour to the detrimental role of exciton-exciton interactions on the pure dephasing rate.
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Submitted 29 October, 2021;
originally announced October 2021.
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Efficient valley polarization of charged excitons and resident carriers in MoS2 monolayers by optical pum**
Authors:
Sangjun Park,
Steve Arscott,
Takashi Taniguchi,
Kenji Watanabe,
Fausto Sirotti,
Fabian Cadiz
Abstract:
We investigate with polarized microphotoluminescence the optical pum** of the valley degree of freedom in charge-tunable MoS2 monolayers encapsulated with hexagonal boron nitride at cryogenic temperatures. We report a large steady state valley polarization of the different excitonic complexes following circularly-polarized laser excitation 25 meV above the neutral exciton transition. For the fir…
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We investigate with polarized microphotoluminescence the optical pum** of the valley degree of freedom in charge-tunable MoS2 monolayers encapsulated with hexagonal boron nitride at cryogenic temperatures. We report a large steady state valley polarization of the different excitonic complexes following circularly-polarized laser excitation 25 meV above the neutral exciton transition. For the first time in this material we reveal efficient valley pum** of positively-charged trions, which were so far elusive in non-encapsulated monolayers due to defect and laser-induced large electron do**. We find that negatively-charged trions present a polarization of 70 % which is unusually large for non-resonant excitation. We attribute this large valley polarization to the particular band structure of MoS2, where an optically dark exciton ground state coexists with a bright conduction band ordering in the single-particle picture, leading to a supression of the valley relaxation for negatively-charged trions. In addition, we demonstrate that circular excitation induces a dynamical polarization of resident electrons and holes, as recently shown in tungsten-based monolayers. This manifest itself as a variation in the intensity of different excitonic complexes under circular and linear excitation.
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Submitted 14 October, 2021;
originally announced October 2021.
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Imaging Seebeck drift of excitons and trions in MoSe2 monolayers
Authors:
Sangjun Park,
Bo Han,
Caroline Boule,
Daniel Paget,
Alistair Rowe,
Fausto Sirotti,
Takashi Taniguchi,
Kenji Watanabe,
Cedric Robert,
Laurent Lombez,
Bernhard Urbaszek,
Xavier Marie,
Fabian Cadiz
Abstract:
Hyperspectral imaging at cryogenic temperatures is used to investigate exciton and trion propagation in MoSe$_2$ monolayers encapsulated with hexagonal boron nitride (hBN). Under a tightly focused, continuous-wave laser excitation, the spatial distribution of neutral excitons and charged trions strongly differ at high excitation densities. Remarkably, in this regime the trion distribution develops…
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Hyperspectral imaging at cryogenic temperatures is used to investigate exciton and trion propagation in MoSe$_2$ monolayers encapsulated with hexagonal boron nitride (hBN). Under a tightly focused, continuous-wave laser excitation, the spatial distribution of neutral excitons and charged trions strongly differ at high excitation densities. Remarkably, in this regime the trion distribution develops a halo shape, similar to that previously observed in WS2 monolayers at room temperature and under pulsed excitation. In contrast, the exciton distribution only presents a moderate broadening without the appereance of a halo. Spatially and spectrally resolved luminescence spectra reveal the buildup of a significant temperature gradient at high excitation power, that is attributed to the energy relaxation of photoinduced hot carriers. We show, via a numerical resolution of the transport equations for excitons and trions, that the halo can be interpreted as thermal drift of trions due to a Seebeck term in the particle current. The model shows that the difference between trion and exciton profiles is simply understood in terms of the very different lifetimes of these two quasiparticles.
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Submitted 20 May, 2021;
originally announced May 2021.
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Spin/Valley pum** of resident electrons in WSe2 and WS2 monolayers
Authors:
Cedric Robert,
Sangjun Park,
Fabian Cadiz,
Laurent Lombez,
Lei Ren,
Hans Tornatzky,
Alistair Rowe,
Daniel Paget,
Fausto Sirotti,
Min Yang,
Dinh Van Tuan,
Takashi Taniguchi,
Bernhard Urbaszek,
Kenji Watanabe,
Thierry Amand,
Hanan Dery,
Xavier Marie
Abstract:
Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short lifetime and spin/valley relaxation time. Here we demonstrate a very efficient spin/valley optical pum** of resident electrons in n-doped WSe2 and WS2 monola…
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Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short lifetime and spin/valley relaxation time. Here we demonstrate a very efficient spin/valley optical pum** of resident electrons in n-doped WSe2 and WS2 monolayers. We observe that, using a continuous wave laser and appropriate do** and excitation densities, negative trion doublet lines exhibit circular polarization of opposite sign and the photoluminescence intensity of the triplet trion is more than four times larger with circular excitation than with linear excitation. We interpret our results as a consequence of a large dynamic polarization of resident electrons using circular light.
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Submitted 11 May, 2021;
originally announced May 2021.
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Discovery of new globular clusters in the Sagittarius dwarf galaxy
Authors:
D. Minniti,
V. Ripepi,
J. G. Fernández-Trincado,
J. Alonso-García,
L. C. Smith,
P. W. Lucas,
M. Gómez,
J. B. Pullen,
E. R. Garro,
F. Vivanco Cádiz,
M. Hempel,
M. Rejkuba,
R. K. Saito,
T. Palma,
J. J. Clariá,
M. Gregg,
D. Majaess
Abstract:
Context. Globular clusters (GCs) are witnesses of the past accretion events onto the Milky Way (MW). In particular, the GCs of the Sagittarius (Sgr) dwarf galaxy are important probes of an on-going merger. Aims. Our main goal is to search for new GC members of this dwarf galaxy using the VISTA Variables in the Via Lactea Extended Survey (VVVX) near-infrared database combined with the Gaia Early Da…
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Context. Globular clusters (GCs) are witnesses of the past accretion events onto the Milky Way (MW). In particular, the GCs of the Sagittarius (Sgr) dwarf galaxy are important probes of an on-going merger. Aims. Our main goal is to search for new GC members of this dwarf galaxy using the VISTA Variables in the Via Lactea Extended Survey (VVVX) near-infrared database combined with the Gaia Early Data Release 3 (EDR3) optical database. Methods. We investigated all VVVX-enabled discoveries of GC candidates in a region covering about 180 sq. deg. toward the bulge and the Sgr dwarf galaxy. We used multiband point-spread function photometry to obtain deep color-magnitude diagrams (CMDs) and luminosity functions (LFs) for all GC candidates, complemented by accurate Gaia-EDR3 proper motions (PMs) to select Sgr members and variability information to select RR Lyrae which are potential GC members. Results. After applying a strict PM cut to discard foreground bulge and disk stars, the CMDs and LFs for some of the GC candidates exhibit well defined red giant branches and red clump giant star peaks. We selected the best Sgr GCs, estimating their distances, reddenings, and associated RR Lyrae. Conclusions. We discover 12 new Sgr GC members, more than doubling the number of GCs known in this dwarf galaxy. In addition, there are 11 other GC candidates identified that are uncertain, awaiting better data for confirmation.
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Submitted 15 March, 2021;
originally announced March 2021.
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Charge and spin transport over record distances in GaAs metallic n-type nanowires : II nonlinear charge transport
Authors:
Hadi Hijazi,
Daniel Paget,
Guillaume Monier,
Gabin Grégoire,
Joël Leymarie,
Evelyne Gil,
Fabian Cadiz,
Christine Robert-Goumet,
Yamina André
Abstract:
We have investigated the photocarrier charge transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 do** level), grown by hydride vapor phase epitaxy (HVPE) on Si(111) substrates. Analysis of the luminescence intensity spatial profiles for selected energies in the spectrum allows us to determine the spatial distribution of photoelectrons, minority photoholes and electrons of the Fermi sea as…
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We have investigated the photocarrier charge transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 do** level), grown by hydride vapor phase epitaxy (HVPE) on Si(111) substrates. Analysis of the luminescence intensity spatial profiles for selected energies in the spectrum allows us to determine the spatial distribution of photoelectrons, minority photoholes and electrons of the Fermi sea as a function of distance from the light excitation spot. This analysis shows that charge can be transported over record distances larger than 25 (micro)m at 6K, in spite of the expected localization of minority holes in the potential fluctuations generated by statistical fluctuations of the donor concentration. It is shown that transport is little affected by the fluctuations because of the build up of large internal electric fields which strongly increase the hole and electron mobilities and therefore enable transport. Comparison of the spatial profiles of the emissions due to hot electrons and to the Fermi sea gives evidence for at least three spatial zones, including a zone of excess intrinsic electrons near the excitation spot and a zone of depletion of these electrons at a distance larger than 2-10 (micro)m depending on excitation power. The internal outward electric field increases the kinetic energy of photoholes in the fluctuations so that after a given distance to the excitation spot, there occurs ballistic transport over the fluctuations.
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Submitted 15 December, 2020;
originally announced December 2020.
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Charge and spin transport over record distances in GaAs metallic n-type nanowires : I photocarrier transport in a dense Fermi sea
Authors:
Hadi Hijazi,
Daniel Paget,
Guillaume Monier,
Gabin Grégoire,
Joël Leymarie,
Evelyne Gil,
Fabian Cadiz,
Christine Robert-Goumet,
Yamina André
Abstract:
We have investigated charge and spin transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 do** level), grown by hydride vapor phase epitaxy (HVPE) on Si substrates. This was done by exciting the nanowire by tightly-focussed circularly-polarized light and by monitoring the intensity and circular polarization spectrum as a function of distance from the excitation spot. The spin-polarized pho…
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We have investigated charge and spin transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 do** level), grown by hydride vapor phase epitaxy (HVPE) on Si substrates. This was done by exciting the nanowire by tightly-focussed circularly-polarized light and by monitoring the intensity and circular polarization spectrum as a function of distance from the excitation spot. The spin-polarized photoelectrons give rise to a well-defined feature in the nearbandgap spectrum, distinct from the main line due to recombination of the spin-unpolarized electrons of the Fermi sea with the same minority photoholes. At a distance of 2 (micro)m, only the main line remains, implying that photoelectrons have reached a charge thermodynamic equilibrium with the Fermi sea. However, although no line is present in the intensity spectrum at the corresponding energy, the circular polarization is still observed at the same energy in the spectrum, implying that photoelectrons have preserved their spin orientation and that the two spin reservoirs remain distinct. Investigations as a function of distance to the excitation spot show that, depending on excitation power, a photoelectron spin polarization of 20% can be transported over a record distance of more than 20 (micro)m. This finding has potential applications for long distance spin transport in n-type doped nanowires.
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Submitted 15 December, 2020;
originally announced December 2020.
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Electrical Detection of Light Helicity using a Quantum Dots based Hybrid Device at Zero Magnetic Field
Authors:
Fabian Cadiz,
Delphine Lagarde,
Bingshan Tao,
Julien Frougier,
Bo Xu,
Henri Jaffrès,
Zhanguo Wang,
Xiufeng Han,
Jean Marie George,
Hélène Carrere,
Andrea Balocchi,
Thierry Amand,
Xavier Marie,
Bernhard Urbaszek,
Yuan Lu,
Pierre Renucci
Abstract:
Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n diode. Our main goal is to take advantage of the long electron spin relaxation time expected in these nano-objects. In these experiments, no external magnetic field is required thanks to the use of an ultrathin magnetic CoF…
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Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n diode. Our main goal is to take advantage of the long electron spin relaxation time expected in these nano-objects. In these experiments, no external magnetic field is required thanks to the use of an ultrathin magnetic CoFeB/MgO electrode, presenting perpendicular magnetic anisotropy (PMA). We observe a clear asymmetry of the photocurrent measured under respective right and left polarized light that follows the hysteresis of the magnetic layer. The amplitude of this asymmetry at zero magnetic field decreases with increasing temperatures and can be controlled with the bias. Polarization-resolved photoluminescence is detected in parallel while the device is operated as a photodetector. This demonstrates the multifunctional capabilities of the device and gives valuable insights into the spin relaxation of the electrons in the quantum dots.
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Submitted 23 July, 2020;
originally announced July 2020.
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Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface
Authors:
H. Li,
L. Martinelli,
F. Cadiz,
A. Bendounan,
S. Arscott,
F. Sirotti,
A. C. H. Rowe
Abstract:
A combination of micro-Raman spectroscopy and micro-XPS (X-ray photo-electron spectroscopy) map** on statically deflected p-type silicon cantilevers is used to study the mechanical stress dependence of the Fermi level pinning at an oxidized silicon (001) surface. With uniaxial compressive and tensile stress applied parallel to the $\langle$110$\rangle$ crystal direction, the observations are rel…
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A combination of micro-Raman spectroscopy and micro-XPS (X-ray photo-electron spectroscopy) map** on statically deflected p-type silicon cantilevers is used to study the mechanical stress dependence of the Fermi level pinning at an oxidized silicon (001) surface. With uniaxial compressive and tensile stress applied parallel to the $\langle$110$\rangle$ crystal direction, the observations are relevant to the electronic properties of strain-silicon nano-devices with large surface-to-volume ratios such as nanowires and nanomembranes. The surface Fermi level pinning is found to be even in applied stress, a fact that may be related to the symmetry of the Pb$_0$ silicon/oxide interface defects. For stresses up to 160 MPa, an increase in the pinning energy of 0.16 meV/MPa is observed for compressive stress, while for tensile stress it increases by 0.11 meV/MPa. Using the bulk, valence band deformation potentials the reduction in surface band bending in compression (0.09 meV/MPa) and in tension (0.13 meV/MPa) can be estimated.
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Submitted 4 February, 2019; v1 submitted 26 October, 2018;
originally announced October 2018.
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Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field
Authors:
F. Cadiz,
A. Djeffal,
D. Lagarde,
A. Balocchi,
B. S. Tao,
B. Xu,
S. H. Liang,
M. Stoffel,
X. Devaux,
H. Jaffres,
J. M. George,
M. Hehn,
S. Mangin,
H. Carrere,
X. Marie,
T. Amand,
X. F. Han,
Z. G. Wang,
B. Urbaszek,
Y. Lu,
P. Renucci
Abstract:
The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device wi…
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The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device with p-type InGaAs quantum dots in the active region. We measure an Overhauser shift of several $μ$eV at zero magnetic field for the positively charged exciton (trion X$^+$) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. This study paves the way for electrical control of nuclear spin polarization in a single quantum dot without any external magnetic field.
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Submitted 12 March, 2018;
originally announced March 2018.
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Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructure
Authors:
F. Cadiz,
C. Robert,
E. Courtade,
M. Manca,
L. Martinelli,
T. Taniguchi,
K. Watanabe,
T. Amand,
A. C. H. Rowe,
D. Paget,
B. Urbaszek,
X. Marie
Abstract:
We have combined spatially-resolved steady-state micro-photoluminescence ($μ$PL) with time-resolved photoluminescence (TRPL) to investigate the exciton diffusion in a WSe$_2$ monolayer encapsulated with hexagonal boron nitride (hBN). At 300 K, we extract an exciton diffusion length $L_X= 0.36\pm 0.02 \; μ$m and an exciton diffusion coefficient of $D_X=14.5 \pm 2\;\mbox{cm}^2$/s. This represents a…
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We have combined spatially-resolved steady-state micro-photoluminescence ($μ$PL) with time-resolved photoluminescence (TRPL) to investigate the exciton diffusion in a WSe$_2$ monolayer encapsulated with hexagonal boron nitride (hBN). At 300 K, we extract an exciton diffusion length $L_X= 0.36\pm 0.02 \; μ$m and an exciton diffusion coefficient of $D_X=14.5 \pm 2\;\mbox{cm}^2$/s. This represents a nearly 10-fold increase in the effective mobility of excitons with respect to several previously reported values on nonencapsulated samples. At cryogenic temperatures, the high optical quality of these samples has allowed us to discriminate the diffusion of the different exciton species : bright and dark neutral excitons, as well as charged excitons. The longer lifetime of dark neutral excitons yields a larger diffusion length of $L_{X^D}=1.5\pm 0.02 \;μ$m.
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Submitted 26 February, 2018;
originally announced February 2018.
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Optical spectroscopy of excited exciton states in MoS2 monolayers in van der Waals heterostructures
Authors:
C. Robert,
M. A. Semina,
F. Cadiz,
M. Manca,
E. Courtade,
T. Taniguchi,
K. Watanabe,
H. Cai,
S. Tongay,
B. Lassagne,
P. Renucci,
T. Amand,
X. Marie,
M. M. Glazov,
B. Urbaszek
Abstract:
The optical properties of MoS2 monolayers are dominated by excitons, but for spectrally broad optical transitions in monolayers exfoliated directly onto SiO2 substrates detailed information on excited exciton states is inaccessible. Encapsulation in hexagonal boron nitride (hBN) allows approaching the homogenous exciton linewidth, but interferences in the van der Waals heterostructures make direct…
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The optical properties of MoS2 monolayers are dominated by excitons, but for spectrally broad optical transitions in monolayers exfoliated directly onto SiO2 substrates detailed information on excited exciton states is inaccessible. Encapsulation in hexagonal boron nitride (hBN) allows approaching the homogenous exciton linewidth, but interferences in the van der Waals heterostructures make direct comparison between transitions in optical spectra with different oscillator strength more challenging. Here we reveal in reflectivity and in photoluminescence excitation spectroscopy the presence of excited states of the A-exciton in MoS2 monolayers encapsulated in hBN layers of calibrated thickness, allowing to extrapolate an exciton binding energy of about 220 meV. We theoretically reproduce the energy separations and oscillator strengths measured in reflectivity by combining the exciton resonances calculated for a screened two-dimensional Coulomb potential with transfer matrix calculations of the reflectivity for the van der Waals structure. Our analysis shows a very different evolution of the exciton oscillator strength with principal quantum number for the screened Coulomb potential as compared to the ideal two-dimensional hydrogen model.
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Submitted 5 December, 2017;
originally announced December 2017.
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Fine Structure and Lifetime of Dark Excitons in Transition Metal Dichalcogenide Monolayers
Authors:
Cedric Robert,
Thierry Amand,
Fabian Cadiz,
Delphine Lagarde,
Emmanuel Courtade,
Marco Manca,
Takashi Taniguchi,
Kenji Watanabe,
Bernhard Urbaszek,
Xavier Marie
Abstract:
The intricate interplay between optically dark and bright excitons governs the light-matter interaction in transition metal dichalcogenide monolayers. We have performed a detailed investigation of the "spin-forbidden" dark excitons in WSe2 monolayers by optical spectroscopy in an out-of-plane magnetic field Bz. In agreement with the theoretical predictions deduced from group theory analysis, magne…
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The intricate interplay between optically dark and bright excitons governs the light-matter interaction in transition metal dichalcogenide monolayers. We have performed a detailed investigation of the "spin-forbidden" dark excitons in WSe2 monolayers by optical spectroscopy in an out-of-plane magnetic field Bz. In agreement with the theoretical predictions deduced from group theory analysis, magneto-photoluminescence experiments reveal a zero field splitting $δ=0.6 \pm 0.1$ meV between two dark exciton states. The low energy state being strictly dipole forbidden (perfectly dark) at Bz=0 while the upper state is partially coupled to light with z polarization ("grey" exciton). The first determination of the dark neutral exciton lifetime $τ_D$ in a transition metal dichalcogenide monolayer is obtained by time-resolved photoluminescence. We measure $τ_D \sim 110 \pm 10$ ps for the grey exciton state, i.e. two orders of magnitude longer than the radiative lifetime of the bright neutral exciton at T=12 K.
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Submitted 9 May, 2018; v1 submitted 17 August, 2017;
originally announced August 2017.
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Charged excitons in monolayer WSe$_2$: experiment and theory
Authors:
E. Courtade,
M. Semina,
M. Manca,
M. M. Glazov,
C. Robert,
F. Cadiz,
G. Wang,
T. Taniguchi,
K. Watanabe,
M. Pierre,
W. Escoffier,
E. L. Ivchenko,
P. Renucci,
X. Marie,
T. Amand,
B. Urbaszek
Abstract:
Charged excitons, or X$^{\pm}$-trions, in monolayer transition metal dichalcogenides have binding energies of several tens of meV. Together with the neutral exciton X$^0$ they dominate the emission spectrum at low and elevated temperatures. We use charge tunable devices based on WSe$_2$ monolayers encapsulated in hexagonal boron nitride, to investigate the difference in binding energy between X…
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Charged excitons, or X$^{\pm}$-trions, in monolayer transition metal dichalcogenides have binding energies of several tens of meV. Together with the neutral exciton X$^0$ they dominate the emission spectrum at low and elevated temperatures. We use charge tunable devices based on WSe$_2$ monolayers encapsulated in hexagonal boron nitride, to investigate the difference in binding energy between X$^+$ and X$^-$ and the X$^-$ fine structure. We find in the charge neutral regime, the X$^0$ emission accompanied at lower energy by a strong peak close to the longitudinal optical (LO) phonon energy. This peak is absent in reflectivity measurements, where only the X$^0$ and an excited state of the X$^0$ are visible. In the $n$-doped regime, we find a closer correspondence between emission and reflectivity as the trion transition with a well-resolved fine-structure splitting of 6~meV for X$^-$ is observed. We present a symmetry analysis of the different X$^+$ and X$^-$ trion states and results of the binding energy calculations. We compare the trion binding energy for the $n$-and $p$-doped regimes with our model calculations for low carrier concentrations. We demonstrate that the splitting between the X$^+$ and X$^-$ trions as well as the fine structure of the X$^-$ state can be related to the short-range Coulomb exchange interaction between the charge carriers.
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Submitted 9 May, 2018; v1 submitted 5 May, 2017;
originally announced May 2017.
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In-plane Propagation of Light in Transition Metal Dichalcogenide Monolayers: Optical Selection Rules
Authors:
G. Wang,
C. Robert,
M. M. Glazov,
F. Cadiz,
E. Courtade,
T. Amand,
D. Lagarde,
T. Taniguchi,
K. Watanabe,
B. Urbaszek,
X. Marie
Abstract:
The optical selection rules for inter-band transitions in WSe2, WS2 and MoSe2 transition metal dichalcogenide monolayers are investigated by polarization-resolved photoluminescence experiments with a signal collection from the sample edge. These measurements reveal a strong polarization-dependence of the emission lines. We see clear signatures of the emitted light with the electric field oriented…
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The optical selection rules for inter-band transitions in WSe2, WS2 and MoSe2 transition metal dichalcogenide monolayers are investigated by polarization-resolved photoluminescence experiments with a signal collection from the sample edge. These measurements reveal a strong polarization-dependence of the emission lines. We see clear signatures of the emitted light with the electric field oriented perpendicular to the monolayer plane, corresponding to an inter-band optical transition forbidden at normal incidence used in standard optical spectroscopy measurements. The experimental results are in agreement with the optical selection rules deduced from group theory analysis, highlighting the key role played by the different symmetries of the conduction and valence bands split by the spin-orbit interaction. These studies yield a direct determination on the bright-dark exciton splitting, for which we measure 40 $\pm 1$ meV and 55 $\pm 2$ meV for WSe2 and WS2 monolayer, respectively.
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Submitted 18 April, 2017;
originally announced April 2017.
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Excitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics
Authors:
F. Cadiz,
E. Courtade,
C. Robert,
G. Wang,
Y. Shen,
H. Cai,
T. Taniguchi,
K. Watanabe,
H. Carrere,
D. Lagarde,
M. Manca,
T. Amand,
P. Renucci,
S. Tongay,
X. Marie,
B. Urbaszek
Abstract:
The strong light matter interaction and the valley selective optical selection rules make monolayer (ML) MoS2 an exciting 2D material for fundamental physics and optoelectronics applications. But so far optical transition linewidths even at low temperature are typically as large as a few tens of meV and contain homogenous and inhomogeneous contributions. This prevented in-depth studies, in contras…
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The strong light matter interaction and the valley selective optical selection rules make monolayer (ML) MoS2 an exciting 2D material for fundamental physics and optoelectronics applications. But so far optical transition linewidths even at low temperature are typically as large as a few tens of meV and contain homogenous and inhomogeneous contributions. This prevented in-depth studies, in contrast to the better-characterized ML materials MoSe2 and WSe2. In this work we show that encapsulation of ML MoS2 in hexagonal boron nitride can efficiently suppress the inhomogeneous contribution to the exciton linewidth, as we measure in photoluminescence and reflectivity a FWHM down to 2 meV at T = 4K. This indicates that surface protection and substrate flatness are key ingredients for obtaining stable, high quality samples. Among the new possibilities offered by the well-defined optical transitions we measure the homogeneous broadening induced by the interaction with phonons in temperature dependent experiments. We uncover new information on spin and valley physics and present the rotation of valley coherence in applied magnetic fields perpendicular to the ML.
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Submitted 1 February, 2017;
originally announced February 2017.
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Enabling valley selective exciton scattering in monolayer WSe$_2$ through upconversion
Authors:
M. Manca,
M. M. Glazov,
C. Robert,
F. Cadiz,
T. Taniguchi,
K. Watanabe,
E. Courtade,
T. Amand,
P. Renucci,
X. Marie,
G. Wang,
B. Urbaszek
Abstract:
Excitons, Coulomb bound electron-hole pairs, are composite bosons and their interactions in traditional semiconductors lead to condensation and light amplification. The much stronger Coulomb interaction in transition metal dichalcogenides such as WSe$_2$ monolayers combined with the presence of the valley degree of freedom is expected to provide new opportunities for controlling excitonic effects.…
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Excitons, Coulomb bound electron-hole pairs, are composite bosons and their interactions in traditional semiconductors lead to condensation and light amplification. The much stronger Coulomb interaction in transition metal dichalcogenides such as WSe$_2$ monolayers combined with the presence of the valley degree of freedom is expected to provide new opportunities for controlling excitonic effects. But so far the bosonic character of exciton scattering processes remains largely unexplored in these two-dimensional (2D) materials. Here we show that scattering between B-excitons and A-excitons preferably happens within the same valley in momentum space. This leads to power dependent, negative polarization of the hot B-exciton emission. We use a selective upconversion technique for efficient generation of B-excitons in the presence of resonantly excited A-excitons at lower energy, we also observe the excited A-excitons state $2s$. Detuning of the continuous wave, low power laser excitation outside the A-exciton resonance (with a full width at half maximum of 4 meV) results in vanishing upconversion signal.
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Submitted 20 January, 2017;
originally announced January 2017.
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Spin and recombination dynamics of excitons and free electrons in p-type GaAs : effect of carrier density
Authors:
F. Cadiz,
D. Lagarde,
P. Renucci,
D. Paget,
T. Amand,
H. Carrère,
A. C. H. Rowe,
S. Arscott
Abstract:
Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly neutral and photoelectrons can either recombine with holes bound to acceptors (e-A0 line) or form excitons which are mostly trapped on neutral acceptors forming the (…
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Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly neutral and photoelectrons can either recombine with holes bound to acceptors (e-A0 line) or form excitons which are mostly trapped on neutral acceptors forming the (A0X) complex. It is found that the spin lifetime is shorter for electrons that recombine through the e-A0 transition due to spin relaxation generated by the exchange scattering of free electrons with either trapped or free holes, whereas spin flip processes are less likely to occur once the electron forms with a free hole an exciton bound to a neutral acceptor. An increase of exci- tation power induces a cross-over to a regime where the bimolecular band-to-band (b-b) emission becomes more favorable due to screening of the electron-hole Coulomb interaction and ionization of excitonic complexes and free excitons. Then, the formation of excitons is no longer possible, the carrier recombination lifetime increases and the spin lifetime is found to decrease dramatically with concentration due to fast spin relaxation with free photoholes. In this high density regime, both the electrons that recombine through the e-A0 transition and through the b-b transition have the same spin relaxation time.
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Submitted 22 November, 2016;
originally announced November 2016.
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Luminescence imaging of photoelectron spin precession during drift in p-type GaAs
Authors:
V. Notot,
D. Paget,
A. C. H. Rowe,
L. Martinelli,
F. Cadiz,
S. Arscott
Abstract:
Using a microfabricated, p-type GaAs Hall bar, is it shown that the combined application of co-planar electric and magnetic fields enables the observation at 50 K of spatial oscillations of the photoluminescence circular polarization due to the precession of drifting spin-polarized photoelec- trons. Observation of these oscillations as a function of electric field E gives a direct measurement of t…
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Using a microfabricated, p-type GaAs Hall bar, is it shown that the combined application of co-planar electric and magnetic fields enables the observation at 50 K of spatial oscillations of the photoluminescence circular polarization due to the precession of drifting spin-polarized photoelec- trons. Observation of these oscillations as a function of electric field E gives a direct measurement of the minority carrier drift mobility and reveals that, for E = 800 V/cm, spin coherence is preserved over a length as large as 25μm.
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Submitted 22 November, 2016;
originally announced November 2016.
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Ultra-low power threshold for laser induced changes in optical properties of 2D Molybdenum dichalcogenides
Authors:
Fabian Cadiz,
Cedric Robert,
Gang Wang,
Wilson Kong,
Xi Fan,
Mark Blei,
Delphine Lagarde,
Maxime Gay,
Marco Manca,
Takashi Taniguchi,
Kenji Watanabe,
Thierry Amand,
Xavier Marie,
Pierre Renucci,
Sefaattin Tongay,
Bernhard Urbaszek
Abstract:
The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical…
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The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical properties of 2D materials undergo irreversible changes. Most surprisingly these effects take place even at low steady state excitation, which is commonly thought to be non-intrusive. In low temperature photoluminescence (PL) we show for monolayer (ML) MoSe2 samples grown by different techniques that laser treatment increases significantly the trion (i.e. charged exciton) contribution to the emission compared to the neutral exciton emission. Comparison between samples exfoliated onto different substrates shows that laser induced do** is more efficient for ML MoSe2 on SiO2/Si compared to h-BN and gold. For ML MoS2 we show that exposure to laser radiation with an average power in the $μ$W/$μ$m$^2$ range does not just increase the trion-to-exciton PL emission ratio, but may result in the irreversible disappearance of the neutral exciton PL emission and a shift of the main PL peak to lower energy.
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Submitted 30 June, 2016;
originally announced June 2016.
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Excitonic properties of semiconducting monolayer and bilayer MoTe2
Authors:
C. Robert,
R. Picard,
D. Lagarde,
G. Wang,
J. P. Echeverry,
F. Cadiz,
P. Renucci,
A. Högele,
T. Amand,
X. Marie,
I. C. Gerber,
B. Urbaszek
Abstract:
MoTe2 belongs to the semiconducting transition metal dichalcogenide family with some properties differing from the other well-studied members (Mo,W)(S,Se)2. The optical band gap is in the near infrared region and both monolayers and bilayers may have a direct optical band gap. We first simulate the band structure of both monolayer and bilayer MoTe2 with DFT-GW calculations. We find a direct (indir…
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MoTe2 belongs to the semiconducting transition metal dichalcogenide family with some properties differing from the other well-studied members (Mo,W)(S,Se)2. The optical band gap is in the near infrared region and both monolayers and bilayers may have a direct optical band gap. We first simulate the band structure of both monolayer and bilayer MoTe2 with DFT-GW calculations. We find a direct (indirect) electronic band gap for the monolayer (bilayer). By solving the Bethe-Salpeter equation, we calculate similar energies for the direct excitonic states in monolayer and bilayer. We then study the optical properties by means of photoluminescence (PL) excitation, time-resolved PL and power dependent PL spectroscopy. We identify the same energy for the B exciton state in monolayer and bilayer. Following circularly polarized excitation, we do not find any exciton polarization for a large range of excitation energies. At low temperature (T=10 K), we measure similar PL decay times of the order of 4 ps for both monolayer and bilayer excitons with a slightly longer one for the bilayer. Finally, we observe a reduction of the exciton-exciton annihilation contribution to the non-radiative recombination in bilayer.
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Submitted 10 June, 2016;
originally announced June 2016.
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Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers
Authors:
G. Wang,
X. Marie,
B. L. Liu,
T. Amand,
C. Robert,
F. Cadiz,
P. Renucci,
B. Urbaszek
Abstract:
The direct gap interband transitions in transition metal dichalcogenides monolayers are governed by chiral optical selection rules. Determined by laser helicity, optical transitions in either the $K^+$ or $K^-$ valley in momentum space are induced. Linearly polarized laser excitation prepares a coherent superposition of valley states. Here we demonstrate the control of the exciton valley coherence…
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The direct gap interband transitions in transition metal dichalcogenides monolayers are governed by chiral optical selection rules. Determined by laser helicity, optical transitions in either the $K^+$ or $K^-$ valley in momentum space are induced. Linearly polarized laser excitation prepares a coherent superposition of valley states. Here we demonstrate the control of the exciton valley coherence in monolayer WSe2 by tuning the applied magnetic field perpendicular to the monolayer plane. We show rotation of this coherent superposition of valley states by angles as large as 30 degrees in applied fields up to 9 T. This exciton valley coherence control on ps time scale could be an important step towards complete control of qubits based on the valley degree of freedom.
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Submitted 7 June, 2016;
originally announced June 2016.
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Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
Authors:
Biswarup Guha,
Felix Marsault,
Fabian Cadiz,
Laurence Morgenroth,
Vladimir Ulin,
Vladimir Berkovitz,
Aristide Lemaître,
Carmen Gomez,
Alberto Amo,
Sylvian Combrié,
Bruno Gérard,
Giuseppe Leo,
Ivan Favero
Abstract:
Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong interaction with quantum dots and quantum wells, and promise to result in stunning devices. However gallium arsenide optical structures presently exhibit lower performances than their silicon-based counterparts, notably in…
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Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong interaction with quantum dots and quantum wells, and promise to result in stunning devices. However gallium arsenide optical structures presently exhibit lower performances than their silicon-based counterparts, notably in nanophotonics where the surface plays a chief role. Here we report on advanced surface control of miniature gallium arsenide optical resonators, using two distinct techniques that produce permanent results. One leads to extend the lifetime of free-carriers and enhance luminescence, while the other strongly reduces surface absorption originating from mid-gap states and enables ultra-low optical dissipation devices. With such surface control, the quality factor of wavelength-sized optical disk resonators is observed to rise up to six million at telecom wavelength, greatly surpassing previous realizations and opening new prospects for Gallium Arsenide nanophotonics.
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Submitted 2 May, 2016;
originally announced May 2016.
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Well separated trion and neutral excitons on superacid treated MoS2 monolayers
Authors:
Fabian Cadiz,
Simon Tricard,
Maxime Gay,
Delphine Lagarde,
Gang Wang,
Cedric Robert,
Pierre Renucci,
Bernhard Urbaszek,
Xavier Marie
Abstract:
Developments in optoelectronics and spin-optronics based on transition metal dichalcogenide monolayers (MLs) need materials with efficient optical emission and well-defined transition energies. In as-exfoliated MoS2 MLs the photoluminescence (PL) spectra even at low temperature consists typically of broad, overlap** contributions from neutral, charged excitons (trions) and localized states. Here…
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Developments in optoelectronics and spin-optronics based on transition metal dichalcogenide monolayers (MLs) need materials with efficient optical emission and well-defined transition energies. In as-exfoliated MoS2 MLs the photoluminescence (PL) spectra even at low temperature consists typically of broad, overlap** contributions from neutral, charged excitons (trions) and localized states. Here we show that in superacid treated MoS2 MLs the PL intensity increases by up to 60 times at room temperature. The neutral and charged exciton transitions are spectrally well separated in PL and reflectivity at T=4 K, with linewidth for the neutral exciton of 15 meV, but with similar intensities compared to the ones in as-exfoliated MLs at the same temperature. Time resolved experiments uncover picoseconds recombination dynamics analyzed separately for charged and neutral exciton emission. Using the chiral interband selection rules, we demonstrate optically induced valley polarization for both complexes and valley coherence for only the neutral exciton.
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Submitted 20 April, 2016;
originally announced April 2016.
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Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers
Authors:
C. Robert,
D. Lagarde,
F. Cadiz,
G. Wang,
B. Lassagne,
T. Amand,
A. Balocchi,
P. Renucci,
S. Tongay,
B. Urbaszek,
X. Marie
Abstract:
We have investigated the exciton dynamics in transition metal dichalcogenide mono-layers using time-resolved photoluminescence experiments performed with optimized time-resolution. For MoSe2 monolayers, we measure $τ_{rad}=1.8\pm0.2$ ps that we interpret as the intrinsic radiative recombination time. Similar values are found for WSe2 mono-layers. Our detailed analysis suggests the following scenar…
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We have investigated the exciton dynamics in transition metal dichalcogenide mono-layers using time-resolved photoluminescence experiments performed with optimized time-resolution. For MoSe2 monolayers, we measure $τ_{rad}=1.8\pm0.2$ ps that we interpret as the intrinsic radiative recombination time. Similar values are found for WSe2 mono-layers. Our detailed analysis suggests the following scenario: at low temperature (T $\leq$ 50 K), the exciton oscillator strength is so large that the entire light can be emitted before the time required for the establishment of a thermalized exciton distribution. For higher lattice temperatures, the photoluminescence dynamics is characterized by two regimes with very different characteristic times. First the PL intensity drops drastically with a decay time in the range of the picosecond driven by the escape of excitons from the radiative window due to exciton- phonon interactions. Following this first non-thermal regime, a thermalized exciton population is established gradually yielding longer photoluminescence decay times in the nanosecond range. Both the exciton effective radiative recombination and non-radiative recombination channels including exciton-exciton annihilation control the latter. Finally the temperature dependence of the measured exciton and trion dynamics indicates that the two populations are not in thermodynamical equilibrium.
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Submitted 3 March, 2016; v1 submitted 1 March, 2016;
originally announced March 2016.
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Ambipolar spin-spin coupling in p$^+$-GaAs
Authors:
F. Cadiz,
D. Paget,
A. C. H. Rowe,
S. Arscott
Abstract:
A novel spin-spin coupling mechanism that occurs during the transport of spin-polarized minority electrons in semiconductors is described. Unlike the Coulomb spin drag, this coupling arises from the ambipolar electric field which is created by the differential movement of the photoelectrons and the photoholes. Like the Coulomb spin drag, it is a pure spin coupling that does not affect charge diffu…
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A novel spin-spin coupling mechanism that occurs during the transport of spin-polarized minority electrons in semiconductors is described. Unlike the Coulomb spin drag, this coupling arises from the ambipolar electric field which is created by the differential movement of the photoelectrons and the photoholes. Like the Coulomb spin drag, it is a pure spin coupling that does not affect charge diffusion. Experimentally, the coupling is studied in $p^+$ GaAs using polarized microluminescence. The coupling manifests itself as an excitation power dependent reduction in the spin polarization at the excitation spot \textit{without} any change of the spatially averaged spin polarization.
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Submitted 13 July, 2015;
originally announced July 2015.
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Anomalous temperature dependence of photoelectron charge and spin mobilities in p+-GaAs
Authors:
F. Cadiz,
D. Paget,
A. C. H. Rowe,
E. Peytavit,
S. Arscott
Abstract:
The effect of an electric field on the spatial charge and spin profiles of photoelectrons in p+-GaAs is studied as a function of lattice and electron temperature. The charge and spin mobilities of photoelectrons are equal in all conditions and exhibit the well known increase as the temperature is lowered. It is shown that this is related mainly to the electron statistics rather than the majority h…
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The effect of an electric field on the spatial charge and spin profiles of photoelectrons in p+-GaAs is studied as a function of lattice and electron temperature. The charge and spin mobilities of photoelectrons are equal in all conditions and exhibit the well known increase as the temperature is lowered. It is shown that this is related mainly to the electron statistics rather than the majority hole statistics. This finding suggests that current theoretical models based on degeneracy of majority carriers cannot fully explain the observed temperature dependence of minority carrier mobility.
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Submitted 28 January, 2015;
originally announced June 2015.
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RGE Effects on neutrino masses in partial split supersymmetry
Authors:
Fabian Cadiz,
Marco Aurelio Díaz
Abstract:
We show that the running of the Higgs-gaugino-higgsino couplings present in Partial Split Supersymmetry can severely affect the neutrino masses generated through Bilinear R-parity Violation. We find a working scenario where the predicted neutrino observables satisfy the experimental constraints when the running is neglected. After including the running, we show that already with a split supersymme…
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We show that the running of the Higgs-gaugino-higgsino couplings present in Partial Split Supersymmetry can severely affect the neutrino masses generated through Bilinear R-parity Violation. We find a working scenario where the predicted neutrino observables satisfy the experimental constraints when the running is neglected. After including the running, we show that already with a split supersymmetric scale of 10000 GeV the atmospheric mass leaves the allowed experimental window, and that the solar mass leaves it even earlier, with a split supersymmetric scale of 1000 GeV. This shows that the correct prediction of neutrino observables in these models necessitates the inclusion of the running of these couplings.
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Submitted 28 October, 2013;
originally announced October 2013.
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VLS-HVPE growth of ultra-long and defect-free GaAs nanowires investigated by ab initio simulation coupled to near-field microscopy
Authors:
Yamina Andre,
Kaddour Lekhal,
Philip Hoggan,
Geoffrey Avit,
Fabian Cadiz,
Alistair Rowe,
Daniel Paget,
Elodie Petit,
Christine Leroux,
Agnes Trassoudaine,
Reda Ramdani,
Guillaume Monier,
David Colas,
Rabih Ajib,
Dominique Castelluci,
Evelyne Gil
Abstract:
High aspect ratio, rod-like and single crystal phase GaAs nanowires (NWs) were grown by gold catalyst-assisted hydride vapor phase epitaxy (HVPE). High resolution transmission electron microscopy (HRTEM) and micro-Raman spectroscopy revealed polytypism-free zinc blende NWs over lengths of several tens of micrometers for diameters ranging between 50 and 150 nm. Micro-photoluminescence studies of in…
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High aspect ratio, rod-like and single crystal phase GaAs nanowires (NWs) were grown by gold catalyst-assisted hydride vapor phase epitaxy (HVPE). High resolution transmission electron microscopy (HRTEM) and micro-Raman spectroscopy revealed polytypism-free zinc blende NWs over lengths of several tens of micrometers for diameters ranging between 50 and 150 nm. Micro-photoluminescence studies of individual NWs showed linewidths smaller than those reported elsewhere which is consistent with the crystalline quality of the NWs. HVPE makes use of chloride growth precursors of which high decomposition frequency, after adsorption onto the catalyst particle, favors a direct and rapid introduction of the Ga atoms from the vapor phase into the catalyst liquid droplet. This yields high axial growth rate (more than 100 micron/h) of NWs. The fast diffusion of the Ga atoms in the droplet towards the interface between the liquid and the solid nanowire was investigated by using density functional theory calculations. The diffusion coefficient of Ga atoms was estimated to be 3x10-9 m2/s, which matches the experimental observations.
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Submitted 30 January, 2014; v1 submitted 17 October, 2013;
originally announced October 2013.
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The effect of Pauli blockade on spin-dependent diffusion in a degenerate electron gas
Authors:
F. Cadiz,
D. Paget,
A. C. H. Rowe
Abstract:
Spin-polarized transport of photo-electrons in bulk, p-type GaAs is investigated in the Pauli blockade regime. In contrast to usual spin diffusion processes in which the spin polarization decreases with distance traveled due to spin relaxation, images of the polarized photo-luminescence reveal a spin-filter effect in which the spin polarization increases during transport over the first 2 microns f…
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Spin-polarized transport of photo-electrons in bulk, p-type GaAs is investigated in the Pauli blockade regime. In contrast to usual spin diffusion processes in which the spin polarization decreases with distance traveled due to spin relaxation, images of the polarized photo-luminescence reveal a spin-filter effect in which the spin polarization increases during transport over the first 2 microns from 26 % to 38 %. This is shown to be a direct consequence of the Pauli Principle and the associated quantum degeneracy pressure which results in a spin-dependent increase in the minority carrier diffusion constants and mobilities. The central role played by the quantum degeneracy pressure is confirmed via the observation of a spin-dependent increase in the photo-electron volume and a spin-charge coupling description of this is presented.
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Submitted 25 September, 2013;
originally announced September 2013.
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Effect of the Pauli principle on photoelectron spin transport in $p^+$ GaAs
Authors:
F. Cadiz,
D. Paget,
A. C. H. Rowe,
T. Amand,
P. Barate,
S. Arscott
Abstract:
In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a function of distance from a tightly-focussed light excitation spot. Under degeneracy of the electron gas (high concentration, low temperature), a dip at the center of the polarization profile appears with a polarization maxim…
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In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a function of distance from a tightly-focussed light excitation spot. Under degeneracy of the electron gas (high concentration, low temperature), a dip at the center of the polarization profile appears with a polarization maximum at a distance of about $2 \; μm$ from the center. This counterintuitive result reveals that photoelectron diffusion depends on spin, as a direct consequence of the Pauli principle. This causes a concentration dependence of the spin stiffness while the spin dependence of the mobility is found to be weak in doped material. The various effects which can modify spin transport in a degenerate electron gas under local laser excitation are considered. A comparison of the data with a numerical solution of the coupled diffusion equations reveals that ambipolar coupling with holes increases the steady-state photo-electron density at the excitation spot and therefore the amplitude of the degeneracy-induced polarization dip. Thermoelectric currrents are predicted to depend on spin under degeneracy (spin Soret currents), but these currents are negligible except at very high excitation power where they play a relatively small role. Coulomb spin drag and bandgap renormalization are negligible due to electrostatic screening by the hole gas.
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Submitted 12 March, 2015; v1 submitted 5 July, 2013;
originally announced July 2013.
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Absence of an intrinsic value for the surface recombination velocity in doped semiconductors
Authors:
F. Cadiz,
D. Paget,
V. L. Berkovits,
V. P. Ulin,
S. Arscott,
E. Peytavit,
A. C. H. Rowe
Abstract:
A self-consistent expression for the surface recombination velocity $S$ and the surface Fermi level unpinning energy as a function of light excitation power ($P$) is presented for n- and p-type semiconductors doped above the 10$^{16}$ cm$^{-3}$ range. Measurements of $S$ on p-type GaAs films using a novel polarized microluminescence technique are used to illustrate two limiting cases of the model.…
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A self-consistent expression for the surface recombination velocity $S$ and the surface Fermi level unpinning energy as a function of light excitation power ($P$) is presented for n- and p-type semiconductors doped above the 10$^{16}$ cm$^{-3}$ range. Measurements of $S$ on p-type GaAs films using a novel polarized microluminescence technique are used to illustrate two limiting cases of the model. For a naturally oxidized surface $S$ is described by a power law in $P$ whereas for a passivated surface $S^{-1}$ varies logarithmically with $P$. Furthermore, the variation in $S$ with surface state density and bulk do** level is found to be the result of Fermi level unpinning rather than a change in the intrinsic surface recombination velocity. It is concluded that $S$ depends on $P$ throughout the experimentally accessible range of excitation powers and therefore that no instrinsic value can be determined. Previously reported values of $S$ on a range of semiconducting materials are thus only valid for a specific excitation power.
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Submitted 13 February, 2013;
originally announced February 2013.
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Imaging ambipolar diffusion of photocarriers in GaAs thin films
Authors:
Daniel Paget,
Fabian Cadiz,
Alistair Rowe,
Francois Moreau,
Steve Arscott,
Emilien Peytavit
Abstract:
Images of the steady-state luminescence of passivated GaAs self-standing films under excitation by a tightly-focussed laser are analyzed as a function of light excitation power. While unipolar diffusion of photoelectrons is dominant at very low light excitation power, an increased power results in a decrease of the diffusion constant near the center of the image due to the onset of ambipolar diffu…
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Images of the steady-state luminescence of passivated GaAs self-standing films under excitation by a tightly-focussed laser are analyzed as a function of light excitation power. While unipolar diffusion of photoelectrons is dominant at very low light excitation power, an increased power results in a decrease of the diffusion constant near the center of the image due to the onset of ambipolar diffusion. The results are in agreement with a numerical solution of the diffusion equations and with a physical analysis of the luminescence intensity at the centre of the image, which permits the determination of the ambipolar diffusion constant as a function of electron concentration.
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Submitted 12 January, 2012;
originally announced January 2012.
