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A Hermetic On-Cryostat Helium Source for Low Temperature Experiments
Authors:
K. E. Castoria,
H. Byeon,
J. Theis,
N. R. Beysengulov,
E. O. Glen,
G. Koolstra,
M. Sammon,
S. A. Lyon,
J. Pollanen,
D. G. Rees
Abstract:
We describe a helium source cell for use in cryogenic experiments that is hermetically sealed $in$ $situ$ on the cold plate of a cryostat. The source cell is filled with helium gas at room temperature and subsequently sealed using a cold weld crim** tool before the cryostat is closed and cooled down. At low temperature the helium condenses and collects in a connected experimental volume, as moni…
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We describe a helium source cell for use in cryogenic experiments that is hermetically sealed $in$ $situ$ on the cold plate of a cryostat. The source cell is filled with helium gas at room temperature and subsequently sealed using a cold weld crim** tool before the cryostat is closed and cooled down. At low temperature the helium condenses and collects in a connected experimental volume, as monitored via the frequency response of a planar superconducting resonator device sensitive to small amounts of liquid helium. This on-cryostat helium source negates the use of a filling tube between the cryogenic volumes and room temperature, thereby preventing unwanted effects such as such as temperature instabilities that arise from the thermomechanical motion of helium within the system. This helium source can be used in experiments investigating the properties of quantum fluids or to better thermalize quantum devices.
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Submitted 2 November, 2023;
originally announced November 2023.
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Current Paths in an Atomic Precision Advanced Manufactured Device Imaged by Nitrogen-Vacancy Diamond Magnetic Microscopy
Authors:
Luca Basso,
Pauli Kehayias,
Jacob Henshaw,
Maziar Saleh Ziabari,
Heejun Byeon,
Michael P. Lilly,
Ezra Bussmann,
Deanna M. Campbell,
Shashank Misra,
Andrew M. Mounce
Abstract:
The recently-developed ability to control phosphorous-do** of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include wh…
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The recently-developed ability to control phosphorous-do** of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and map** of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this paper, we performed nitrogen-vacancy (NV) wide-field magnetic imaging of stray magnetic fields from surface current densities flowing in an APAM test device over a mm-field of view with μm-resolution. To do this, we integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current density, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ~0.03 A/m, corresponding to a smallest detectable current in the 200 μm-wide APAM ribbon of ~6 μA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.
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Submitted 28 July, 2022;
originally announced July 2022.
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Towards Deterministic Creation of Single Photon Sources in Diamond using In-Situ Ion Counting
Authors:
M. Titze,
H. Byeon,
A. R. Flores,
J. Henshaw,
C. T. Harris,
A. M. Mounce,
E. S. Bielejec
Abstract:
We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical focused ion beam implantation relies on knowing the beam current and setting a pulse length of the ion pulse to define the number of ions implanted at each location…
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We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical focused ion beam implantation relies on knowing the beam current and setting a pulse length of the ion pulse to define the number of ions implanted at each location, referred to as timed implantation in this paper. This process is dominated by Poisson statistics resulting in large errors for low number of implanted ions. Instead, we use in-situ detection to measure the number of ions arriving at the substrate resulting in a two-fold reduction in the error on the number of implanted ions used to generate a single optically active silicon vacancy (SiV) defect in diamond compared to timed implantation. Additionally, through post-implantation analysis, we can further reduce the error resulting in a seven-fold improvement compared to timed implantation, allowing us to better estimate the conversion yield of implanted Si to SiV. We detect SiV emitters by photoluminescence spectroscopy, determine the number of emitters per location and calculate the yield to be 2.98 + 0.21 / - 0.24 %. Candidates for single photon emitters are investigated further by Hanbury-Brown-Twiss interferometry confirming that 82 % of the locations exhibit single photon emission statistics. This counted ion implantation technique paves the way towards deterministic creation of SiV when ion counting is used in combination with methods that improve the activation yield of SiV.
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Submitted 3 December, 2021;
originally announced December 2021.
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Piezoacoustics for precision control of electrons floating on helium
Authors:
H. Byeon,
K. Nasyedkin,
J. R. Lane,
N. R. Beysengulov,
L. Zhang,
R. Loloee,
J. Pollanen
Abstract:
Piezoelectric surface acoustic waves (SAWs) are powerful for investigating and controlling elementary and collective excitations in condensed matter. In semiconductor two-dimensional electron systems SAWs have been used to reveal the spatial and temporal structure of electronic states, produce quantized charge pum**, and transfer quantum information. In contrast to semiconductors, electrons trap…
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Piezoelectric surface acoustic waves (SAWs) are powerful for investigating and controlling elementary and collective excitations in condensed matter. In semiconductor two-dimensional electron systems SAWs have been used to reveal the spatial and temporal structure of electronic states, produce quantized charge pum**, and transfer quantum information. In contrast to semiconductors, electrons trapped above the surface of superfluid helium form an ultra-high mobility, two-dimensional electron system home to strongly-interacting Coulomb liquid and solid states, which exhibit non-trivial spatial structure and temporal dynamics prime for SAW-based experiments. Here we report on the coupling of electrons on helium to an evanescent piezoelectric SAW. We demonstrate precision acoustoelectric transport of as little as ~0.01% of the electrons, opening the door to future quantized charge pum** experiments. We also show SAWs are a route to investigating the high-frequency dynamical response, and relaxational processes, of collective excitations of the electronic liquid and solid phases of electrons on helium.
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Submitted 8 July, 2021; v1 submitted 5 August, 2020;
originally announced August 2020.
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Integrating superfluids with superconducting qubit systems
Authors:
J. R. Lane,
D. Tan,
N. R. Beysengulov,
K. Nasyedkin,
E. Brook,
L. Zhang,
T. Stefanski,
H. Byeon,
K. W. Murch,
J. Pollanen
Abstract:
Superfluid helium's low-loss dielectric properties, excellent thermal conductivity, and unique collective excitations make it an attractive candidate to incorporate into superconducting qubit systems. We controllably immerse a three-dimensional superconducting transmon qubit in superfluid helium-4 and measure the spectroscopic and coherence properties of the system. We find that the cavity, the qu…
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Superfluid helium's low-loss dielectric properties, excellent thermal conductivity, and unique collective excitations make it an attractive candidate to incorporate into superconducting qubit systems. We controllably immerse a three-dimensional superconducting transmon qubit in superfluid helium-4 and measure the spectroscopic and coherence properties of the system. We find that the cavity, the qubit, and their coupling are all modified by the superfluid, which we analyze within the framework of circuit quantum electrodynamics (cQED). At at temperatures relevant to quantum computing experiments, the energy relaxation time of the qubit is not significantly changed by the presence of the superfluid, while the pure dephasing time modestly increases, which we attribute to improved thermalization of the microwave environment via the superfluid.
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Submitted 18 November, 2019; v1 submitted 17 July, 2019;
originally announced July 2019.
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Anomalous attenuation of piezoacoustic surface waves by liquid helium thin films
Authors:
H. Byeon,
K. Nasyedkin,
J. R. Lane,
L. Zhang,
N. R. Beysengulov,
R. Loloee,
J. Pollanen
Abstract:
We report on the observation of an anomalously high attenuation of high frequency surface acoustic waves by thin films of liquid $^{4}$He. The piezoelectric acoustic waves propagate along the surface of a lithium niobate substrate, which is coated with varying amounts of liquid helium. When the thickness of the helium layer is much larger than the wavelength of the surface acoustic wave on the sub…
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We report on the observation of an anomalously high attenuation of high frequency surface acoustic waves by thin films of liquid $^{4}$He. The piezoelectric acoustic waves propagate along the surface of a lithium niobate substrate, which is coated with varying amounts of liquid helium. When the thickness of the helium layer is much larger than the wavelength of the surface acoustic wave on the substrate its attenuation is dominated by the excitation of compressional waves into the liquid, in good agreement with theory and previous measurements. However, for sufficiently thin helium coverage, we find that the acoustic wave attenuation is significantly increased beyond that measured with the substrate submerged in bulk liquid. Possible mechanisms for this enhanced attenuation are discussed.
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Submitted 25 December, 2018; v1 submitted 27 July, 2018;
originally announced July 2018.
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Unconventional field-effect transistor composed of electrons floating on liquid helium
Authors:
K. Nasyedkin,
H. Byeon,
L. Zhang,
N. R. Beysengulov,
J. Milem,
S. Hemmerle,
R. Loloee,
J. Pollanen
Abstract:
We report on an unconventional $macroscopic$ field effect transistor composed of electrons floating above the surface of superfluid helium. With this device unique transport regimes are realized in which the charge density of the electron layer can be controlled in a manner not possible in other material systems. In particular, we are able to manipulate the collective behavior of the electrons to…
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We report on an unconventional $macroscopic$ field effect transistor composed of electrons floating above the surface of superfluid helium. With this device unique transport regimes are realized in which the charge density of the electron layer can be controlled in a manner not possible in other material systems. In particular, we are able to manipulate the collective behavior of the electrons to produce a highly non-uniform, but precisely controlled, charge density to reveal a negative source-drain current. This behavior can be understood by considering the propagation of damped charge oscillations along a transmission line formed by the inhomogeneous sheet of two-dimensional electrons above, and between, the source and drain electrodes of the transistor.
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Submitted 25 October, 2018; v1 submitted 12 July, 2018;
originally announced July 2018.
