Showing 1–50 of 61 results for author: Butov, L

Excitonic Bose-polarons in electron-hole bilayers

Authors: E. A. Szwed, B. Vermilyea, D. J. Choksy, Zhiwen Zhou, M. M. Fogler, L. V. Butov, D. K. Efimkin, K. W. Baldwin, L. N. Pfeiffer

Abstract: Bose polarons are mobile impurities dressed by density fluctuations of a surrounding degenerate Bose gas. These many-body objects have been realized in ultracold atomic gasses and become a subject of intensive studies. In this work, we show that excitons in electron-hole bilayers offer new opportunities for exploring polarons in strongly interacting, highly tunable bosonic systems. We found that B… ▽ More Bose polarons are mobile impurities dressed by density fluctuations of a surrounding degenerate Bose gas. These many-body objects have been realized in ultracold atomic gasses and become a subject of intensive studies. In this work, we show that excitons in electron-hole bilayers offer new opportunities for exploring polarons in strongly interacting, highly tunable bosonic systems. We found that Bose polarons are formed by spatially direct excitons immersed in degenerate Bose gases of spatially indirect excitons (IXs). We detected both attractive and repulsive Bose polarons by measuring photoluminescence excitation spectra. We controlled the density of IX Bose gas by optical excitation and observed an enhancement of the energy splitting between attractive and repulsive Bose polarons with increasing IX density, in agreement with our theoretical calculations. △ Less

Submitted 21 June, 2024; originally announced June 2024.

Long-distance decay-less spin transport in indirect excitons in a van der Waals heterostructure

Authors: Zhiwen Zhou, E. A. Szwed, D. J. Choksy, L. H. Fowler-Gerace, L. V. Butov

Abstract: In addition to its fundamental interest, the long-distance spin transport with suppressed spin losses is essential for spintronic devices. However, the spin relaxation caused by scattering of the particles carrying the spin, limits the spin transport. We explored spatially indirect excitons (IXs), also known as interlayer excitons, in van der Waals heterostructures (HS) composed of atomically thin… ▽ More In addition to its fundamental interest, the long-distance spin transport with suppressed spin losses is essential for spintronic devices. However, the spin relaxation caused by scattering of the particles carrying the spin, limits the spin transport. We explored spatially indirect excitons (IXs), also known as interlayer excitons, in van der Waals heterostructures (HS) composed of atomically thin layers of transition-metal dichalcogenides (TMD) as spin carries. TMD HS also offer coupling of spin and valley transport. We observed the long-distance spin transport with the decay distances exceeding 100~$μ$m and diverging so spin currents show no decay in the HS. With increasing IX density, we observed spin localization, then long-distance spin transport, and then reentrant spin localization, in agreement with the Bose-Hubbard theory prediction for superfluid and insulating phases in periodic potentials due to moiré superlattices. The suppression of scattering in exciton superfluid suppresses the spin relaxation and enables the long-distance spin transport. This mechanism of protection against the spin relaxation makes IXs a platform for the realization of long-distance decay-less spin transport. △ Less

Submitted 6 June, 2024; originally announced June 2024.

Comments: arXiv admin note: text overlap with arXiv:2307.00702

Transport and localization of indirect excitons in a van der Waals heterostructure

Authors: L. H. Fowler-Gerace, Zhiwen Zhou, E. A. Szwed, D. J. Choksy, L. V. Butov

Abstract: Long lifetimes of spatially indirect excitons (IXs), also known as interlayer excitons, allow implementing both quantum exciton systems and long-range exciton transport. Van der Waals heterostructures (HS) composed of atomically thin layers of transition-metal dichalcogenides (TMD) offer the opportunity to explore IXs in moiré superlattices. The moiré IXs in TMD HS form the materials platform for… ▽ More Long lifetimes of spatially indirect excitons (IXs), also known as interlayer excitons, allow implementing both quantum exciton systems and long-range exciton transport. Van der Waals heterostructures (HS) composed of atomically thin layers of transition-metal dichalcogenides (TMD) offer the opportunity to explore IXs in moiré superlattices. The moiré IXs in TMD HS form the materials platform for exploring the Bose-Hubbard physics and superfluid and insulating phases in periodic potentials. IX transport in TMD HS was intensively studied and diffusive IX transport with $1/e$ decay distances $d_{1/e}$ up to $\sim 3$ $μ$m was realized. In this work, we present in MoSe$_2$/WSe$_2$ HS the IX long-range transport with $d_{1/e}$ exceeding 100 $μ$m and diverging at the optical excitation resonant to spatially direct excitons. The IX long-range transport vanishes at high temperatures. With increasing IX density, IX localization, then IX long-range transport, and then IX reentrant localization is observed. The results are in qualitative agreement with the Bose-Hubbard theory of bosons in periodic potentials predicting superfluid at $N \sim 1/2$ and insulating at $N \sim 0$ and $N \sim 1$ phases for the number of bosons per site of the periodic potential $N$. △ Less

Submitted 2 July, 2023; originally announced July 2023.

Comments: arXiv admin note: text overlap with arXiv:2204.09760

Fermi edge singularity in neutral electron-hole system

Authors: D. J. Choksy, E. A. Szwed, L. V. Butov, K. W. Baldwin, L. N. Pfeiffer

Abstract: In neutral dense electron-hole (e-h) systems at low temperatures, theory predicts Cooper-pair-like excitons at the Fermi energy and a BCS-like exciton condensation. Optical excitation allows creating e-h systems with the densities controlled by the excitation power. However, the intense optical excitations required to achieve high densities cause substantial heating of the e-h system that prevents… ▽ More In neutral dense electron-hole (e-h) systems at low temperatures, theory predicts Cooper-pair-like excitons at the Fermi energy and a BCS-like exciton condensation. Optical excitation allows creating e-h systems with the densities controlled by the excitation power. However, the intense optical excitations required to achieve high densities cause substantial heating of the e-h system that prevents the realization of dense and cold e-h systems in conventional semiconductors. In this work, we study e-h systems created by optical excitation in separated electron and hole layers. The layer separation increases the e-h recombination time and, in turn, the density for a given optical excitation by orders of magnitude and, as a result, enables the realization of the dense and cold e-h system. We found a strong enhancement of photoluminescence intensity at the Fermi energy of the neutral dense ultracold e-h system that evidences the emergence of excitonic Fermi edge singularity due to the Cooper-pair-like excitons at the Fermi energy. △ Less

Submitted 13 September, 2022; originally announced September 2022.

Long-range quantum transport of indirect excitons in van der Waals heterostructure

Authors: L. H. Fowler-Gerace, Zhiwen Zhou, E. A. Szwed, L. V. Butov

Abstract: Long lifetimes of spatially indirect excitons (IXs), also known as interlayer excitons, make possible long-range IX propagation. Van der Waals heterostructures composed of atomically thin layers of transition-metal dichalcogenides (TMDs) give an opportunity to realize excitons with high binding energies and provide a materials platform for the realization of both excitonic quantum phenomena and ex… ▽ More Long lifetimes of spatially indirect excitons (IXs), also known as interlayer excitons, make possible long-range IX propagation. Van der Waals heterostructures composed of atomically thin layers of transition-metal dichalcogenides (TMDs) give an opportunity to realize excitons with high binding energies and provide a materials platform for the realization of both excitonic quantum phenomena and excitonic devices. Propagation of IXs in TMD heterostructures is intensively studied. However, in spite of long IX lifetimes, orders of magnitude longer than lifetimes of spatially direct excitons (DXs), a relatively short-range IX propagation with the $1/e$ decay distances $d_{1/e}$ up to few $μ$m was reported in the studies of TMD heterostructures. The short-range of IX propagation originates from in-plane potentials, which localize excitons and suppress exciton transport. In particular, significant in-plane moiré potentials predicted in TMD heterostructures can cause an obstacle for IX propagation. In this work, we realize in a MoSe$_2$/WSe$_2$ heterostructure a macroscopically long-range IX propagation with $d_{1/e}$ reaching $\sim 100$ $μ$m. The strong enhancement of IX propagation is realized using an optical excitation resonant to DXs in the heterostructure. The strong enhancement of IX propagation originates from the suppression of IX localization and scattering and is observed in the quantum regime. △ Less

Submitted 3 June, 2022; v1 submitted 20 April, 2022; originally announced April 2022.

Voltage-controlled long-range propagation of indirect excitons in van der Waals heterostructure

Authors: L. H. Fowler-Gerace, D. J. Choksy, L. V. Butov

Abstract: Indirect excitons (IXs), also known as interlayer excitons, can form the medium for excitonic devices whose operation is based on controlled propagation of excitons. A proof of principle for excitonic devices was demonstrated in GaAs heterostructures where the operation of excitonic devices is limited to low temperatures. IXs in van der Waals transition-metal dichalcogenide (TMD) heterostructures… ▽ More Indirect excitons (IXs), also known as interlayer excitons, can form the medium for excitonic devices whose operation is based on controlled propagation of excitons. A proof of principle for excitonic devices was demonstrated in GaAs heterostructures where the operation of excitonic devices is limited to low temperatures. IXs in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by high binding energies making IXs robust at room temperature and offering an opportunity to create excitonic devices operating at high temperatures suitable for applications. However, a characteristic feature of TMD heterostructures is the presence of moiré superlattice potentials, which are predicted to cause modulations of IX energy reaching tens of meV. These in-plane energy landscapes can lead to IX localization, making IX propagation fundamentally different in TMD and GaAs heterostructures and making uncertain if long-range IX propagation can be realized in TMD heterostructures. In this work, we realize long-range IX propagation with the $1/e$ IX luminescence decay distances reaching 13 microns in a MoSe$_2$/WSe$_2$ heterostructure. We trace the IX luminescence along the IX propagation path. We also realize control of the long-range IX propagation: the IX luminescence signal in the drain of an excitonic transistor is controlled within 40 times by gate voltage. These data show that the long-range IX propagation is possible in TMD heterostructures with the predicted moiré superlattice potentials. △ Less

Submitted 4 January, 2021; originally announced January 2021.

Comments: 10 pages, 8 figures

Journal ref: Phys. Rev. B 104, 165302 (2021)

Attractive and repulsive dipolar interaction in bilayers of indirect excitons

Authors: Darius Choksy, Chao Xu, Michael Fogler, Leonid Butov, Justin Norman, Arthur Gossard

Abstract: We explore attractive dipolar interaction in indirect excitons (IXs). For one layer of IXs in a single pair of coupled quantum wells (CQW), the out-of-plane IX electric dipoles lead to repulsive dipolar interaction between IXs. The attractive dipolar interaction between IXs is realized in a 2-CQW heterostructure with two IX layers in two separated CQW pairs. We found both in experimental measureme… ▽ More We explore attractive dipolar interaction in indirect excitons (IXs). For one layer of IXs in a single pair of coupled quantum wells (CQW), the out-of-plane IX electric dipoles lead to repulsive dipolar interaction between IXs. The attractive dipolar interaction between IXs is realized in a 2-CQW heterostructure with two IX layers in two separated CQW pairs. We found both in experimental measurements and theoretical simulations that increasing density of IXs in one layer causes a monotonic energy reduction for IXs in the other layer. We also found an in-plane shift of a cloud of IXs in one layer towards a cloud of IXs in the other layer. This behaviour is qualitatively consistent with attractive dipolar interaction. The measured IX energy reduction and IX cloud shift are higher than the values given by the correlated liquid theory. △ Less

Submitted 11 November, 2020; originally announced November 2020.

Journal ref: Phys. Rev. B 103, 045126 (2021)

Interference dislocations in condensate of indirect excitons

Authors: J. R. Leonard, Lunhui Hu, A. A. High, A. T. Hammack, Congjun Wu, L. V. Butov, K. L. Campman, A. C. Gossard

Abstract: Phase singularities in quantum states play a significant role both in the state properties and in the transition between the states. For instance, a transition to two-dimensional superfluid state is governed by pairing of vortices and, in turn, unpaired vortices can cause dissipations for particle fluxes. Vortices and other phase defects can be revealed by characteristic features in interference p… ▽ More Phase singularities in quantum states play a significant role both in the state properties and in the transition between the states. For instance, a transition to two-dimensional superfluid state is governed by pairing of vortices and, in turn, unpaired vortices can cause dissipations for particle fluxes. Vortices and other phase defects can be revealed by characteristic features in interference patterns produced by the quantum system. We present dislocation-like phase singularities in interference patterns in a condensate of indirect excitons measured by shift-interferometry. We show that the observed dislocations in interference patterns are not associated with conventional phase defects: neither with vortices, nor with polarization vortices, nor with half-vortices, nor with skyrmions, nor with half-skyrmions. We present the origin of these new phase singularities in condensate interference patterns: the observed interference dislocations originate from converging of the condensate matter waves propagating from different sources. △ Less

Submitted 17 October, 2019; v1 submitted 14 October, 2019; originally announced October 2019.

Comments: 5+ pages, 4 figures

Exciton gas transport through nano-constrictions

Authors: Chao Xu, J. R. Leonard, C. J. Dorow, L. V. Butov, M. M. Fogler, D. E. Nikonov, I. A. Young

Abstract: An indirect exciton is a bound state of an electron and a hole in spatially separated layers. Two-dimensional indirect excitons can be created optically in heterostructures containing double quantum wells or atomically thin semiconductors. We study theoretically transmission of such bosonic quasiparticles through nano-constrictions. We show that quantum transport phenomena, e.g., conductance quant… ▽ More An indirect exciton is a bound state of an electron and a hole in spatially separated layers. Two-dimensional indirect excitons can be created optically in heterostructures containing double quantum wells or atomically thin semiconductors. We study theoretically transmission of such bosonic quasiparticles through nano-constrictions. We show that quantum transport phenomena, e.g., conductance quantization, single-slit diffraction, two-slit interference, and the Talbot effect, are experimentally realizable in systems of indirect excitons. We discuss similarities and differences between these phenomena and their counterparts in electronic devices. △ Less

Submitted 25 June, 2019; v1 submitted 5 May, 2019; originally announced May 2019.

Comments: (v2) Updated title, text, and references; 12 pages, 9 figures

Localized bright luminescence of indirect excitons and trions in MoSe$_2$/WSe$_2$ van der Waals heterostructure

Authors: E. V. Calman, L. H. Fowler-Gerace, L. V. Butov, D. E. Nikonov, I. A. Young, S. Hu, A. Mischenko, A. K. Geim

Abstract: Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in GaAs heterostructures where an IX range of existence is limited to low temperatures due to low IX binding energies. IXs in van der Waals transition-metal dichalco… ▽ More Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in GaAs heterostructures where an IX range of existence is limited to low temperatures due to low IX binding energies. IXs in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by large binding energies giving the opportunity for exploring excitonic quantum gases and for creating excitonic devices at high temperatures. TMD heterostructures also offer a new platform for studying single-exciton phenomena and few-particle complexes. In this work, we present studies of IXs in MoSe$_2$/WSe$_2$ heterostructures and report on two IX luminescence lines whose energy splitting and temperature dependence identify them as neutral and charged IXs. The experimentally found binding energy of the indirect charged excitons, i.e. indirect trions, is close to the calculated binding energy of 28 meV for negative indirect trions in TMD heterostructures [Deilmann, Thygesen, Nano Lett. 18, 1460 (2018)]. We also report on the realization of IXs with a luminescence linewidth reaching 4~meV at low temperatures. An enhancement of IX luminescence intensity and the narrow linewidth are observed in localized spots. △ Less

Submitted 20 November, 2019; v1 submitted 24 January, 2019; originally announced January 2019.

High-mobility indirect excitons in wide single quantum well

Authors: C. J. Dorow, M. W. Hasling, D. J. Choksy, J. R. Leonard, L. V. Butov, K. W. West, L. N. Pfeiffer

Abstract: Indirect excitons (IXs) are bound pairs of electrons and holes confined in spatially separated layers. We present wide single quantum well (WSQW) heterostructures with high IX mobility, spectrally narrow IX emission, voltage-controllable IX energy, and long and voltage-controllable IX lifetime. This set of properties shows that WSQW heterostructures provide an advanced platform both for studying b… ▽ More Indirect excitons (IXs) are bound pairs of electrons and holes confined in spatially separated layers. We present wide single quantum well (WSQW) heterostructures with high IX mobility, spectrally narrow IX emission, voltage-controllable IX energy, and long and voltage-controllable IX lifetime. This set of properties shows that WSQW heterostructures provide an advanced platform both for studying basic properties of IXs in low-disorder environments and for the development of high mobility excitonic devices. △ Less

Submitted 2 October, 2018; originally announced October 2018.

Split-gate device for indirect excitons

Authors: C. J. Dorow, J. R. Leonard, M. M. Fogler, L. V. Butov, K. W. West, L. N. Pfeiffer

Abstract: We present a concept and experimental proof of principle for split-gate devices for indirect excitons (IXs). The split-gate forms a narrow channel, a point contact, for IX current. Control of IX flow through the split-gate with both gate voltage and excitation power is demonstrated. We present a concept and experimental proof of principle for split-gate devices for indirect excitons (IXs). The split-gate forms a narrow channel, a point contact, for IX current. Control of IX flow through the split-gate with both gate voltage and excitation power is demonstrated. △ Less

Submitted 4 January, 2018; originally announced January 2018.

Journal ref: Appl. Phys. Lett. 112, 183501 (2018)

Indirect excitons in van der Waals heterostructures at room temperature

Authors: E. V. Calman, M. M. Fogler, L. V. Butov, S. Hu, A. Mishchenko, A. K. Geim

Abstract: Indirect excitons (IXs) in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by a high binding energy making them stable at room temperature and giving the opportunity for exploring fundamental phenomena in excitonic systems and develo** excitonic devices operational at high temperatures. We present the observation of IXs at room temperature in van der Waals… ▽ More Indirect excitons (IXs) in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by a high binding energy making them stable at room temperature and giving the opportunity for exploring fundamental phenomena in excitonic systems and develo** excitonic devices operational at high temperatures. We present the observation of IXs at room temperature in van der Waals TMD heterostructures based on monolayers of MoS$_2$ separated by atomically thin hexagonal boron nitride. The IXs realized in the TMD heterostructure have lifetimes orders of magnitude longer than lifetimes of direct excitons in single-layer TMD, and their energy is gate controlled. △ Less

Submitted 20 September, 2017; originally announced September 2017.

Journal ref: Nature Commun. 9, 1895 (2018)

Control of light polarization by voltage tunable excitonic metasurfaces

Authors: S. V. Lobanov, N. A. Gippius, S. G. Tikhodeev, L. V. Butov

Abstract: We propose a light emitting device with voltage controlled degree of linear polarization of emission. The device combines the ability of metasurfaces to control light with an energy-tunable light source based on indirect excitons in coupled quantum well heterostructures. We propose a light emitting device with voltage controlled degree of linear polarization of emission. The device combines the ability of metasurfaces to control light with an energy-tunable light source based on indirect excitons in coupled quantum well heterostructures. △ Less

Submitted 6 September, 2017; originally announced September 2017.

Journal ref: Appl. Phys. Lett. 111, 241101 (2017)

Pancharatnam-Berry phase in condensate of indirect excitons

Authors: J. R. Leonard, A. A. High, A. T. Hammack, M. M. Fogler, L. V. Butov, K. L. Campman, A. C. Gossard

Abstract: We report on the observation of the Pancharatnam-Berry phase in a condensate of indirect excitons (IXs) in a GaAs coupled quantum well structure. The Pancharatnam-Berry phase leads to phase shifts of interference fringes in IX interference patterns. Correlations are found between the phase shifts, polarization pattern of IX emission, and onset of IX spontaneous coherence. The Pancharatnam-Berry ph… ▽ More We report on the observation of the Pancharatnam-Berry phase in a condensate of indirect excitons (IXs) in a GaAs coupled quantum well structure. The Pancharatnam-Berry phase leads to phase shifts of interference fringes in IX interference patterns. Correlations are found between the phase shifts, polarization pattern of IX emission, and onset of IX spontaneous coherence. The Pancharatnam-Berry phase is acquired due to coherent spin precession in IX condensate. The effect of the Pancharatnam-Berry phase on the IX phase pattern is described in terms of an associated momentum. △ Less

Submitted 2 September, 2017; originally announced September 2017.

Comments: 6 pages, 5 figures + 2 pages supplemental material, 3 supplemental figures

Journal ref: Nature Communications 9, 2158 (2018)

Spatially and time-resolved imaging of transport of indirect excitons in high magnetic fields

Authors: C. J. Dorow, M. W. Hasling, E. V. Calman, L. V. Butov, J. Wilkes, K. L. Campman, A. C. Gossard

Abstract: We present the direct measurements of magnetoexciton transport. Excitons give the opportunity to realize the high magnetic field regime for composite bosons with magnetic fields of a few Tesla. Long lifetimes of indirect excitons allow the study kinetics of magnetoexciton transport with time-resolved optical imaging of exciton photoluminescence. We performed spatially, spectrally, and time-resolve… ▽ More We present the direct measurements of magnetoexciton transport. Excitons give the opportunity to realize the high magnetic field regime for composite bosons with magnetic fields of a few Tesla. Long lifetimes of indirect excitons allow the study kinetics of magnetoexciton transport with time-resolved optical imaging of exciton photoluminescence. We performed spatially, spectrally, and time-resolved optical imaging of transport of indirect excitons in high magnetic fields. We observed that increasing magnetic field slows down magnetoexciton transport. The time-resolved measurements of the magnetoexciton transport distance allowed for an experimental estimation of the magnetoexciton diffusion coefficient. An enhancement of the exciton photoluminescence energy at the laser excitation spot was found to anti-correlate with the exciton transport distance. A theoretical model of indirect magnetoexciton transport is presented and is in agreement with the experimental data. △ Less

Submitted 25 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. B 95, 235308 (2017)

Transport of Indirect Excitons in High Magnetic Fields

Authors: Y. Y. Kuznetsova, C. J. Dorow, E. V. Calman, L. V. Butov, J. Wilkes, K. L. Campman, A. C. Gossard

Abstract: We present spatially- and spectrally-resolved photoluminescence measurements of indirect excitons in high magnetic fields. Long indirect exciton lifetimes give the opportunity to measure magnetoexciton transport by optical imaging. Indirect excitons formed from electrons and holes at zeroth Landau levels (0e - 0h indirect magnetoexcitons) travel over large distances and form a ring emission patter… ▽ More We present spatially- and spectrally-resolved photoluminescence measurements of indirect excitons in high magnetic fields. Long indirect exciton lifetimes give the opportunity to measure magnetoexciton transport by optical imaging. Indirect excitons formed from electrons and holes at zeroth Landau levels (0e - 0h indirect magnetoexcitons) travel over large distances and form a ring emission pattern around the excitation spot. In contrast, the spatial profiles of 1e - 1h and 2e - 2h indirect magnetoexciton emission closely follow the laser excitation profile. The 0e - 0h indirect magnetoexciton transport distance reduces with increasing magnetic field. These effects are explained in terms of magnetoexciton energy relaxation and effective mass enhancement. △ Less

Submitted 10 October, 2016; originally announced October 2016.

Journal ref: Phys. Rev. B 95, 125304 (2017)

Theory of condensation of indirect excitons in a trap

Authors: S. V. Lobanov, N. A. Gippius, L. V. Butov

Abstract: We present theoretical studies of condensation of indirect excitons in a trap. Our model quantifies the effect of screening of the trap potential by indirect excitons on exciton condensation. The theoretical studies are applied to a system of indirect excitons in a GaAs/AlGaAs coupled quantum well structure in a diamond-shaped electrostatic trap where exciton condensation was studied in earlier ex… ▽ More We present theoretical studies of condensation of indirect excitons in a trap. Our model quantifies the effect of screening of the trap potential by indirect excitons on exciton condensation. The theoretical studies are applied to a system of indirect excitons in a GaAs/AlGaAs coupled quantum well structure in a diamond-shaped electrostatic trap where exciton condensation was studied in earlier experiments. The estimated condensation temperature of the indirect excitons in the trap reaches hundreds of milliKelvin. △ Less

Submitted 8 November, 2016; v1 submitted 1 September, 2016; originally announced September 2016.

Journal ref: Phys. Rev. B 94, 245401 (2016)

Indirect excitons in a potential energy landscape created by a perforated electrode

Authors: C. J. Dorow, Y. Y. Kuznetsova, J. R. Leonard, M. K. Chu, L. V. Butov, J. Wilkes, M. Hanson, A. C. Gossard

Abstract: We report on the principle and realization of an excitonic device: a ramp that directs the transport of indirect excitons down a potential energy gradient created by a perforated electrode at constant voltage. The device provides an experimental proof of principle for controlling exciton transport with electrode density gradients. We observed that the exciton transport distance along the ramp incr… ▽ More We report on the principle and realization of an excitonic device: a ramp that directs the transport of indirect excitons down a potential energy gradient created by a perforated electrode at constant voltage. The device provides an experimental proof of principle for controlling exciton transport with electrode density gradients. We observed that the exciton transport distance along the ramp increases with increasing exciton density. This effect is explained in terms of disorder screening by repulsive exciton-exciton interactions. △ Less

Submitted 8 February, 2016; originally announced February 2016.

Journal ref: Appl. Phys. Lett. 108, 073502 (2016)

Influence of magnetic quantum confined Stark effect on the spin lifetime of indirect excitons

Authors: P. Andreakou, A. V. Mikhailov, S. Cronenberger, D. Scalbert, A. Nalitov, A. V. Kavokin, M. Nawrocki, L. V. Butov, A. C. Gossard, M. Vladimirova

Abstract: We report on the unusual and counter-intuitive behaviour of spin lifetime of excitons in coupled semiconductor quantum wells (CQWs) in the presence of in-plane magnetic field. Instead of conventional acceleration of spin relaxation due to the Larmor precession of electron and hole spins we observe a strong increase of the spin relaxation time at low magnetic fields followed by saturation and decre… ▽ More We report on the unusual and counter-intuitive behaviour of spin lifetime of excitons in coupled semiconductor quantum wells (CQWs) in the presence of in-plane magnetic field. Instead of conventional acceleration of spin relaxation due to the Larmor precession of electron and hole spins we observe a strong increase of the spin relaxation time at low magnetic fields followed by saturation and decrease at higher fields. We argue that this non-monotonic spin relaxation dynamics is a fingerprint of the magnetic quantum confined Stark effect. In the presence of electric field along the CQW growth axis, an applied magnetic field efficiently suppresses the exciton spin coherence, due to inhomogeneous broadening of the $g$-factor distribution. △ Less

Submitted 4 January, 2016; originally announced January 2016.

Comments: 9 pages, 4 figures

Journal ref: Phys. Rev. B 93, 115410 (2016)

Control of excitons in multi-layer van der Waals heterostructures

Authors: E. V. Calman, C. J. Dorow, M. M. Fogler, L. V. Butov, S. Hu, A. Mishchenko, A. K. Geim

Abstract: We report an experimental study of excitons in a double quantum well van der Waals heterostructure made of atomically thin layers of \Mo* and hexagonal boron nitride (hBN). The emission of neutral and charged excitons is controlled by gate voltage, temperature, and both the helicity and the power of optical excitation. We report an experimental study of excitons in a double quantum well van der Waals heterostructure made of atomically thin layers of \Mo* and hexagonal boron nitride (hBN). The emission of neutral and charged excitons is controlled by gate voltage, temperature, and both the helicity and the power of optical excitation. △ Less

Submitted 15 December, 2015; v1 submitted 15 October, 2015; originally announced October 2015.

Journal ref: Appl. Phys. Lett. 108, 101901 (2016)

Measurement of exciton correlations using electrostatic lattices

Authors: M. Remeika, J. R. Leonard, C. J. Dorow, M. M. Fogler, L. V. Butov, M. Hanson, A. C. Gossard

Abstract: We present a method for determining correlations in a gas of indirect excitons in a semiconductor quantum well structure. The method involves subjecting the excitons to a periodic electrostatic potential that causes modulations of the exciton density and photoluminescence (PL). Experimentally measured amplitudes of energy and intensity modulations of exciton PL serve as an input to a theoretical e… ▽ More We present a method for determining correlations in a gas of indirect excitons in a semiconductor quantum well structure. The method involves subjecting the excitons to a periodic electrostatic potential that causes modulations of the exciton density and photoluminescence (PL). Experimentally measured amplitudes of energy and intensity modulations of exciton PL serve as an input to a theoretical estimate of the exciton correlation parameter and temperature. We also present a proof-of-principle demonstration of the method for determining the correlation parameter and discuss how its accuracy can be improved. △ Less

Submitted 5 April, 2016; v1 submitted 18 August, 2015; originally announced August 2015.

Comments: 10 pages, 11 figures

Journal ref: Phys. Rev. B 92, 115311 (2015)

Transport of indirect excitons in ZnO quantum wells

Authors: Yuliya Kuznetsova, Fedor Fedichkin, Peristera Andreakou, Eric Calman, Leonid Butov, Pierre Lefebvre, Thierry Bretagnon, Thierry Guillet, Maria Vladimirova, C. Morhain, Jean-Michel Chauveau

Abstract: We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells. We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells. △ Less

Submitted 23 July, 2015; v1 submitted 10 March, 2015; originally announced March 2015.

Journal ref: Optics Letters 40, 3667-3670 (2015)

Fluctuation and Commensurability Effect of Exciton Density Wave

Authors: Sen Yang, L. V. Butov, B. D. Simons, K. L. Campman, A. C. Gossard

Abstract: At low temperatures, indirect excitons formed at the in-plane electron-hole interface in a coupled quantum well structure undergo a spontaneous transition into a spatially modulated state. We report on the control of the instability wavelength, measurement of the dynamics of the exciton emission pattern, and observation of the fluctuation and commensurability effect of the exciton density wave. We… ▽ More At low temperatures, indirect excitons formed at the in-plane electron-hole interface in a coupled quantum well structure undergo a spontaneous transition into a spatially modulated state. We report on the control of the instability wavelength, measurement of the dynamics of the exciton emission pattern, and observation of the fluctuation and commensurability effect of the exciton density wave. We found that fluctuations are strongly suppressed when the instability wavelength is commensurate with defect separation along the exciton density wave. The commensurability effect is also found in numerical simulations within the model describing the exciton density wave in terms of an instability due to stimulated processes. △ Less

Submitted 7 February, 2015; originally announced February 2015.

Journal ref: Phys. Rev. B 91, 245302 (2015)

Stirring Potential for Indirect Excitons

Authors: M. W. Hasling, Y. Y. Kuznetsova, P. Andreakou, J. R. Leonard, E. V. Calman, C. Dorow, L. V. Butov, M. Hanson, A. C. Gossard

Abstract: We demonstrate experimental proof of principle for a stirring potential for indirect excitons. The azimuthal wavelength of this stirring potential is set by the electrode periodicity, the amplitude is controlled by the applied AC voltage, and the angular velocity is controlled by the AC frequency. We demonstrate experimental proof of principle for a stirring potential for indirect excitons. The azimuthal wavelength of this stirring potential is set by the electrode periodicity, the amplitude is controlled by the applied AC voltage, and the angular velocity is controlled by the AC frequency. △ Less

Submitted 2 October, 2014; originally announced October 2014.

Nonlinear optical spectroscopy of indirect excitons in biased coupled quantum wells

Authors: P. Andreakou, S. Cronenberger, D. Scalbert, A. Nalitov, N. A. Gippius, A. V. Kavokin, M. Nawrocki, J. R. Leonard, L. V. Butov, K. L. Campman, A. C. Gossard, M. Vladimirova

Abstract: Indirect excitons in coupled quantum wells are long-living quasi-particles, explored in the studies of collective quantum states. We demonstrate, that despite the extremely low oscillator strength, their spin and population dynamics can by addressed by time-resolved pump-probe spectroscopy. Our experiments make it possible to unravel and compare spin dynamics of direct excitons, indirect excitons… ▽ More Indirect excitons in coupled quantum wells are long-living quasi-particles, explored in the studies of collective quantum states. We demonstrate, that despite the extremely low oscillator strength, their spin and population dynamics can by addressed by time-resolved pump-probe spectroscopy. Our experiments make it possible to unravel and compare spin dynamics of direct excitons, indirect excitons and residual free electrons in coupled quantum wells. Measured spin relaxation time of indirect excitons exceeds not only one of direct excitons, but also one of free electrons by two orders of magnitude. △ Less

Submitted 3 October, 2014; v1 submitted 21 July, 2014; originally announced July 2014.

Comments: 10 pages, 8 figures

Journal ref: Phys. Rev. B 91, 125437 (2015)

High-temperature superfluidity with indirect excitons in van der Waals heterostructures

Authors: M. M. Fogler, L. V. Butov, K. S. Novoselov

Abstract: All known superfluid and superconducting states of condensed matter are enabled by composite bosons (atoms, molecules, Cooper pairs) made of an even number of fermions. Temperatures where such macroscopic quantum phenomena occur are limited by the lesser of the binding energy and the degeneracy temperature of the bosons. High critical temperature cuprate superconductors set the present record of ~… ▽ More All known superfluid and superconducting states of condensed matter are enabled by composite bosons (atoms, molecules, Cooper pairs) made of an even number of fermions. Temperatures where such macroscopic quantum phenomena occur are limited by the lesser of the binding energy and the degeneracy temperature of the bosons. High critical temperature cuprate superconductors set the present record of ~100 K. Here we propose a design for artificially structured materials to rival this record. The main elements of the structure are two monolayers of a transition metal dichalcogenide separated by an atomically thin spacer. Electrons and holes generated in the system would accumulate in the opposite monolayers and form bosonic bound states --- the indirect excitons. The resultant degenerate Bose gas of indirect excitons would exhibit macroscopic occupation of a quantum state and vanishing viscosity at high temperatures. △ Less

Submitted 28 July, 2014; v1 submitted 4 April, 2014; originally announced April 2014.

Comments: 7 pages, 4 figures

Journal ref: Nat. Commun. 5, 4555 (2014)

Nonlinear Optical Probe of Indirect Excitons

Authors: A. V. Nalitov, M. Vladimirova, A. V. Kavokin, L. V. Butov, N. A. Gippius

Abstract: We propose the application of nonlinear optics for studies of spatially indirect excitons in coupled quantum wells. We demonstrate, that despite their vanishing oscillator strength, indirect excitons can strongly contribute to the photoinduced reflectivity and Kerr rotation. This phenomenon is governed by the interaction between direct and indirect excitons. Both dark and bright states of indirect… ▽ More We propose the application of nonlinear optics for studies of spatially indirect excitons in coupled quantum wells. We demonstrate, that despite their vanishing oscillator strength, indirect excitons can strongly contribute to the photoinduced reflectivity and Kerr rotation. This phenomenon is governed by the interaction between direct and indirect excitons. Both dark and bright states of indirect excitons can be probed by these nonlinear optical techniques. △ Less

Submitted 4 November, 2013; v1 submitted 1 November, 2013; originally announced November 2013.

Optically Controlled Excitonic Transistor

Authors: P. Andreakou, S. V. Poltavtsev, J. R. Leonard, E. V. Calman, M. Remeika, Y. Y. Kuznetsova, L. V. Butov, J. Wilkes, M. Hanson, A. C. Gossard

Abstract: Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all-optical exciton… ▽ More Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all-optical excitonic routers. △ Less

Submitted 29 October, 2013; originally announced October 2013.

Journal ref: Applied Physics Letters 104, 091101 (2014)

Ballistic spin transport in exciton gases

Authors: A. V. Kavokin, M. Vladimirova, B. Jouault, T. C. H. Liew, J. R. Leonard, L. V. Butov

Abstract: Traditional spintronics relies on spin transport by charge carriers, such as electrons in semiconductor crystals. This brings several complications: the Pauli principle prevents the carriers from moving with the same speed; Coulomb repulsion leads to rapid dephasing of electron flows. Spin-optronics is a valuable alternative to traditional spintronics. In spin-optronic devices the spin currents ar… ▽ More Traditional spintronics relies on spin transport by charge carriers, such as electrons in semiconductor crystals. This brings several complications: the Pauli principle prevents the carriers from moving with the same speed; Coulomb repulsion leads to rapid dephasing of electron flows. Spin-optronics is a valuable alternative to traditional spintronics. In spin-optronic devices the spin currents are carried by electrically neutral bosonic quasi-particles: excitons or exciton-polaritons. They can form highly coherent quantum liquids and carry spins over macroscopic distances. The price to pay is a finite life-time of the bosonic spin carriers. We present the theory of exciton ballistic spin transport which may be applied to a range of systems where bosonic spin transport has been reported, in particular, to indirect excitons in coupled GaAs/AlGaAs quantum wells. We describe the effect of spin-orbit interaction of electrons and holes on the exciton spin, account for the Zeeman effect induced by external magnetic fields, long range and short range exchange splittings of the exciton resonances. We also consider exciton transport in the non-linear regime and discuss the definitions of exciton spin current, polarization current and spin conductivity. △ Less

Submitted 6 November, 2013; v1 submitted 1 May, 2013; originally announced May 2013.

Comments: 16 pages, 10 figures to be published in Phys. Rev. B

Pattern Formation in the Exciton Inner Ring

Authors: M. Remeika, A. T. Hammack, S. Poltavtsev, L. V. Butov, J. Wilkes, A. L. Ivanov, K. L. Campman, M. Hanson, A. C. Gossard

Abstract: We report on the spatially separated pump-probe study of indirect excitons in the inner ring in the exciton emission pattern. A pump laser beam generates the inner ring and a weaker probe laser beam is positioned in the inner ring. The probe beam is found to suppress the exciton emission intensity in the ring. We also report on the inner ring fragmentation and formation of multiple rings in the in… ▽ More We report on the spatially separated pump-probe study of indirect excitons in the inner ring in the exciton emission pattern. A pump laser beam generates the inner ring and a weaker probe laser beam is positioned in the inner ring. The probe beam is found to suppress the exciton emission intensity in the ring. We also report on the inner ring fragmentation and formation of multiple rings in the inner ring region. These features are found to originate from a weak spatial modulation of the excitation beam intensity in the inner ring region. The modulation of exciton emission intensity anti-correlates with the modulation of the laser excitation intensity. The three phenomena - inner ring fragmentation, formation of multiple rings in the inner ring region, and emission suppression by a weak probe laser beam - have a common feature: a reduction of exciton emission intensity in the region of enhanced laser excitation. This effect is explained in terms of exciton transport and thermalization. △ Less

Submitted 18 April, 2013; originally announced April 2013.

Comments: 9 pages, 12 figures

Journal ref: Phys. Rev. B 88, 125307 (2013)

Spin currents in a coherent exciton gas

Authors: A. A. High, A. T. Hammack, J. R. Leonard, Sen Yang, L. V. Butov, T. Ostatnicky, M. Vladimirova, A. V. Kavokin, T. C. H. Liew, K. L. Campman, A. C. Gossard

Abstract: Spin currents and spin textures are observed in a coherent gas of indirect excitons. Applied magnetic fields bend the spin current trajectories and transform patterns of linear polarization from helical to spiral and patterns of circular polarization from four-leaf to bell-like-with-inversion. Spin currents and spin textures are observed in a coherent gas of indirect excitons. Applied magnetic fields bend the spin current trajectories and transform patterns of linear polarization from helical to spiral and patterns of circular polarization from four-leaf to bell-like-with-inversion. △ Less

Submitted 15 February, 2013; originally announced February 2013.

Comments: 5 pages text, 3 figures + 12 pages supplemental information, 3 movies

Journal ref: Phys. Rev. Lett. 110, 246403 (2013)

Transport of Indirect Excitons in a Potential Energy Gradient

Authors: J. R. Leonard, M. Remeika, M. K. Chu, Y. Y. Kuznetsova, A. A. High, L. V. Butov, J. Wilkes, M. Hanson, A. C. Gossard

Abstract: We realized a potential energy gradient - a ramp - for indirect excitons using a shaped electrode at constant voltage. We studied transport of indirect excitons along the ramp and observed that the exciton transport distance increases with increasing density and temperature. We realized a potential energy gradient - a ramp - for indirect excitons using a shaped electrode at constant voltage. We studied transport of indirect excitons along the ramp and observed that the exciton transport distance increases with increasing density and temperature. △ Less

Submitted 31 May, 2012; v1 submitted 28 March, 2012; originally announced March 2012.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 100, 231106 (2012)

Excitation Energy Dependence of the Exciton Inner Ring

Authors: Y. Y. Kuznetsova, J. R. Leonard, L. V. Butov, J. Wilkes, E. A. Muljarov, K. L. Campman, A. C. Gossard

Abstract: We report on the excitation energy dependence of the inner ring in the exciton emission pattern. The contrast of the inner ring is found to decrease with lowering excitation energy. Excitation by light tuned to the direct exciton resonance is found to effectively suppress excitation-induced heating of indirect excitons and facilitate the realization of a cold and dense exciton gas. The excitation… ▽ More We report on the excitation energy dependence of the inner ring in the exciton emission pattern. The contrast of the inner ring is found to decrease with lowering excitation energy. Excitation by light tuned to the direct exciton resonance is found to effectively suppress excitation-induced heating of indirect excitons and facilitate the realization of a cold and dense exciton gas. The excitation energy dependence of the inner ring is explained in terms of exciton transport and cooling. △ Less

Submitted 14 February, 2012; originally announced February 2012.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 85, 165452 (2012)

Spontaneous coherence of indirect excitons in a trap

Authors: Alexander A. High, Jason R. Leonard, Mikas Remeika, Leonid V. Butov, Micah Hanson, Arthur C. Gossard

Abstract: We report on the emergence of spontaneous coherence in a gas of indirect excitons in an electrostatic trap. At low temperatures, the exciton coherence length becomes much larger than the thermal de Broglie wavelength and reaches the size of the exciton cloud in the trap. We report on the emergence of spontaneous coherence in a gas of indirect excitons in an electrostatic trap. At low temperatures, the exciton coherence length becomes much larger than the thermal de Broglie wavelength and reaches the size of the exciton cloud in the trap. △ Less

Submitted 7 October, 2011; v1 submitted 6 October, 2011; originally announced October 2011.

Comments: 4 pages, 4 figures

Journal ref: Nano Letters 12, 2605--2609 (2012)

Two-Dimensional Electrostatic Lattices for Indirect Excitons

Authors: Mikas Remeika, Michael M. Fogler, Leonid V. Butov, Micah Hanson, Arthur C. Gossard

Abstract: We report on a method for the realization of two-dimensional electrostatic lattices for excitons using patterned interdigitated electrodes. Lattice structure is set by the electrode pattern and depth of the lattice potential is controlled by applied voltages. We demonstrate square, hexagonal, and honeycomb lattices created by this method. We report on a method for the realization of two-dimensional electrostatic lattices for excitons using patterned interdigitated electrodes. Lattice structure is set by the electrode pattern and depth of the lattice potential is controlled by applied voltages. We demonstrate square, hexagonal, and honeycomb lattices created by this method. △ Less

Submitted 29 September, 2011; originally announced September 2011.

Comments: 4 pages, 3 figures. Main text and supplementary information

Journal ref: Appl. Phys. Lett. 100, 061103 (2012)

Spontaneous Coherence in a Cold Exciton Gas

Authors: Alexander A. High, Jason R. Leonard, Aaron T. Hammack, Michael M. Fogler, Leonid V. Butov, Alexey V. Kavokin, Kenneth L. Campman, Arthur C. Gossard

Abstract: Excitons, bound pairs of electrons and holes, form a model system to explore the quantum physics of cold bosons in solids. Cold exciton gases can be realized in a system of indirect excitons, which can cool down below the temperature of quantum degeneracy due to their long lifetimes. Here, we report on the measurement of spontaneous coherence in a gas of indirect excitons. We found that extended s… ▽ More Excitons, bound pairs of electrons and holes, form a model system to explore the quantum physics of cold bosons in solids. Cold exciton gases can be realized in a system of indirect excitons, which can cool down below the temperature of quantum degeneracy due to their long lifetimes. Here, we report on the measurement of spontaneous coherence in a gas of indirect excitons. We found that extended spontaneous coherence of excitons emerges in the region of the macroscopically ordered exciton state and in the region of vortices of linear polarization. The coherence length in these regions is much larger than in a classical gas, indicating a coherent state with a much narrower than classical exciton distribution in momentum space, characteristic of a condensate. We also observed phase singularities in the coherent exciton gas. Extended spontaneous coherence and phase singularities emerge when the exciton gas is cooled below a few Kelvin. △ Less

Submitted 22 September, 2011; v1 submitted 1 September, 2011; originally announced September 2011.

Comments: Main Text and Supporting Material

Journal ref: Nature 483, 584-588 (29 March 2012)

Spin Texture in a Cold Exciton Gas

Authors: A. A. High, A. T. Hammack, J. R. Leonard, Sen Yang, L. V. Butov, T. Ostatnicky, A. V. Kavokin, A. C. Gossard

Abstract: We report on the observation of a spin texture in a cold exciton gas in a GaAs/AlGaAs coupled quantum well structure. The spin texture is observed around the exciton rings. The observed phenomena include: a ring of linear polarization, a vortex of linear polarization with polarization perpendicular to the radial direction, an anisotropy in the exciton flux, a skew of the exciton fluxes in orthogon… ▽ More We report on the observation of a spin texture in a cold exciton gas in a GaAs/AlGaAs coupled quantum well structure. The spin texture is observed around the exciton rings. The observed phenomena include: a ring of linear polarization, a vortex of linear polarization with polarization perpendicular to the radial direction, an anisotropy in the exciton flux, a skew of the exciton fluxes in orthogonal circular polarizations and a corresponding four-leaf pattern of circular polarization, a periodic spin texture, and extended exciton coherence in the region of the polarization vortex. The data indicate a transport regime where the spin polarization is locked to the direction of particle propagation and scattering is suppressed. △ Less

Submitted 23 February, 2012; v1 submitted 1 March, 2011; originally announced March 2011.

Comments: version 2 contains updated supplementary material

Journal ref: Phys. Rev. Lett. 110, 246403 (2013)

Electrostatic Conveyer for Excitons

Authors: A. G. Winbow, J. R. Leonard, M. Remeika, Y. Y. Kuznetsova, A. A. High, A. T. Hammack, L. V. Butov, J. Wilkes, A. A. Guenther, A. L. Ivanov, M. Hanson, A. C. Gossard

Abstract: We report on the study of indirect excitons in moving lattices - conveyers created by a set of AC voltages applied to the electrodes on the sample surface. The wavelength of this moving lattice is set by the electrode periodicity, the amplitude is controlled by the applied voltage, and the velocity is controlled by the AC frequency. We observed the dynamical localization-delocalization transition… ▽ More We report on the study of indirect excitons in moving lattices - conveyers created by a set of AC voltages applied to the electrodes on the sample surface. The wavelength of this moving lattice is set by the electrode periodicity, the amplitude is controlled by the applied voltage, and the velocity is controlled by the AC frequency. We observed the dynamical localization-delocalization transition for excitons in the conveyers and measured its dependence on the exciton density and conveyer amplitude and velocity. We considered a model for exciton transport via conveyers. The theoretical simulations are in agreement with the experimental data. △ Less

Submitted 25 February, 2011; originally announced February 2011.

Comments: 4 pages, 4 figures + supplemental material including two videos

Journal ref: Phys. Rev. Lett. 106, 196806 (2011)

Excitonic switches at 100 K temperatures

Authors: G. Grosso, J. Graves, A. T. Hammack, A. A. High, L. V. Butov, M. Hanson, A. C. Gossard

Abstract: Photonic and optoelectronic devices may offer the opportunity to realize efficient signal processing at speeds higher than in conventional electronic devices. Switches form the building blocks for circuits and fast photonic switches have been realized [1,2,3,4,5,6]. Recently, proof of principle of exciton optoelectronic devices was demonstrated [7,8]. Potential advantages of excitonic devices in… ▽ More Photonic and optoelectronic devices may offer the opportunity to realize efficient signal processing at speeds higher than in conventional electronic devices. Switches form the building blocks for circuits and fast photonic switches have been realized [1,2,3,4,5,6]. Recently, proof of principle of exciton optoelectronic devices was demonstrated [7,8]. Potential advantages of excitonic devices include high operation and interconnection speed, small dimensions, and the opportunity to combine many elements into integrated circuits. Here, we demonstrate experimental proof of principle for the operation of excitonic switching devices at temperatures around 100 K. The devices are based on an AlAs/GaAs coupled quantum well structure and include the exciton optoelectronic transistor (EXOT), the excitonic bridge modulator (EXBM), and the excitonic pinch-off modulator (EXPOM). This is a two orders of magnitude increase in the operation temperature compared to the earlier devices, where operation was demonstrated at 1.5 K [7,8]. △ Less

Submitted 7 October, 2009; v1 submitted 3 October, 2009; originally announced October 2009.

Comments: 5 pages, 5 figures; added references for abstract, changed Figure 1

Journal ref: Nature Photonics 3, 577 - 580 (2009)

Kinetics of the inner ring in the exciton emission pattern in GaAs coupled quantum wells

Authors: A. T. Hammack, L. V. Butov, J. Wilkes, L. Mouchliadis, E. A. Muljarov, A. L. Ivanov, A. C. Gossard

Abstract: We report on the kinetics of the inner ring in the exciton emission pattern. The formation time of the inner ring following the onset of the laser excitation is found to be about 30 ns. The inner ring was also found to disappear within 4 ns after the laser termination. The latter process is accompanied by a jump in the photoluminescence (PL) intensity. The spatial dependence of the PL-jump indic… ▽ More We report on the kinetics of the inner ring in the exciton emission pattern. The formation time of the inner ring following the onset of the laser excitation is found to be about 30 ns. The inner ring was also found to disappear within 4 ns after the laser termination. The latter process is accompanied by a jump in the photoluminescence (PL) intensity. The spatial dependence of the PL-jump indicates that the excitons outside of the region of laser excitation, including the inner ring region, are efficiently cooled to the lattice temperature even during the laser excitation. The ring formation and disappearance are explained in terms of exciton transport and cooling. △ Less

Submitted 3 September, 2009; originally announced September 2009.

Comments: 19 pages, 6 figures

Journal ref: Phys. Rev. B 80, 155331 (2009)

Kinetics of Exciton Emission Patterns and Carrier Transport

Authors: Sen Yang, L. V. Butov, L. S. Levitov, B. D. Simons, A. C. Gossard

Abstract: We report on the measurements of the kinetics of expanding and collapsing rings in the exciton emission pattern. The rings are found to preserve their integrity during expansion and collapse, indicating that the observed kinetics is controlled by charge carrier transport rather than by a much faster process of exciton production and decay. The relation between ring kinetics and carrier transport… ▽ More We report on the measurements of the kinetics of expanding and collapsing rings in the exciton emission pattern. The rings are found to preserve their integrity during expansion and collapse, indicating that the observed kinetics is controlled by charge carrier transport rather than by a much faster process of exciton production and decay. The relation between ring kinetics and carrier transport, revealed by our experiment and confirmed by comparison with a theoretical model, is used to determine electron and hole transport characteristics in a contactless fashion. △ Less

Submitted 20 August, 2009; originally announced August 2009.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 81, 115320 (2010)

Collection of indirect excitons in a diamond-shaped electrostatic trap

Authors: A. A. High, A. K. Thomas, G. Grosso, M. Remeika, A. T. Hammack, A. D. Meyertholen, M. M. Fogler, L. V. Butov, M. Hanson, A. C. Gossard

Abstract: We report on the principle and realization of a new trap for excitons -- the diamond electrostatic trap -- which uses a single electrode to create a confining potential for excitons. We also create elevated diamond traps which permit evaporative cooling of the exciton gas. We observe collection of excitons towards the trap center with increasing exciton density. This effect is due to screening o… ▽ More We report on the principle and realization of a new trap for excitons -- the diamond electrostatic trap -- which uses a single electrode to create a confining potential for excitons. We also create elevated diamond traps which permit evaporative cooling of the exciton gas. We observe collection of excitons towards the trap center with increasing exciton density. This effect is due to screening of disorder in the trap by the excitons. As a result, the diamond trap behaves as a smooth parabolic potential which realizes a cold and dense exciton gas at the trap center. △ Less

Submitted 3 June, 2009; originally announced June 2009.

Comments: 4 Pages, 5 figures

Journal ref: Phys. Rev. Lett. 103, 087403 (2009)

Spin transport of indirect excitons

Authors: J. R. Leonard, Y. Kuznetsova, Sen Yang, L. V. Butov, T. Ostatnický, A. Kavokin, A. C. Gossard

Abstract: Spin transport of indirect excitons in GaAs/AlGaAs coupled quantum wells was observed by measuring the spatially resolved circular polarization of exciton emission. Exciton spin transport over several microns originates from a long spin relaxation time and long lifetime of indirect excitons. Spin transport of indirect excitons in GaAs/AlGaAs coupled quantum wells was observed by measuring the spatially resolved circular polarization of exciton emission. Exciton spin transport over several microns originates from a long spin relaxation time and long lifetime of indirect excitons. △ Less

Submitted 13 May, 2009; originally announced May 2009.

Comments: 4 pages, 4 figures

Journal ref: Nano Lett., 2009, 9 (12), pp 4204-4208

Localization-Delocalization Transition of Indirect Excitons in Lateral Electrostatic Lattices

Authors: M. Remeika, J. C. Graves, A. T. Hammack, A. D. Meyertholen, M. M. Fogler, L. V. Butov, M. Hanson, A. C. Gossard

Abstract: We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition (LDT) for transport across the lattice was observed with reducing lattice amplitude or increasing exciton density. The exciton interaction energy at the transition is close to the lattice amplitude. These results a… ▽ More We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition (LDT) for transport across the lattice was observed with reducing lattice amplitude or increasing exciton density. The exciton interaction energy at the transition is close to the lattice amplitude. These results are consistent with the model, which attributes the LDT to the interaction-induced percolation of the exciton gas through the external potential. We also discuss applications of the lattice potentials for estimating the strength of disorder and exciton interaction. △ Less

Submitted 9 January, 2009; originally announced January 2009.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 102, 186803 (2009)

Spin transport of indirect excitons in GaAs coupled quantum wells

Authors: J. R. Leonard, Sen Yang, L. V. Butov, A. C. Gossard

Abstract: Spin transport of indirect excitons in GaAs/AlGaAs coupled quantum wells was observed by measuring the spatially resolved circular polarization of the exciton emission. The exciton spin transport originates from the long spin relaxation time and long lifetime of the indirect excitons. Spin transport of indirect excitons in GaAs/AlGaAs coupled quantum wells was observed by measuring the spatially resolved circular polarization of the exciton emission. The exciton spin transport originates from the long spin relaxation time and long lifetime of the indirect excitons. △ Less

Submitted 26 November, 2008; v1 submitted 18 August, 2008; originally announced August 2008.

Comments: 4+ pages, 4 figures, minor corrections

Journal ref: Nano Lett., 2009, 9 (12), pp 4204-4208

Photon storage with sub-nanosecond readout rise time in coupled quantum wells

Authors: A. G. Winbow, L. V. Butov, A. C. Gossard

Abstract: Photon storage with 250 ps rise time of the readout optical signal was implemented with indirect excitons in coupled quantum well nanostructures (CQW). The storage and release of photons was controlled by the gate voltage pulse. The transient processes in the CQW were studied by measuring the kinetics of the exciton emission spectra after application of the gate voltage pulse. Strong oscillation… ▽ More Photon storage with 250 ps rise time of the readout optical signal was implemented with indirect excitons in coupled quantum well nanostructures (CQW). The storage and release of photons was controlled by the gate voltage pulse. The transient processes in the CQW were studied by measuring the kinetics of the exciton emission spectra after application of the gate voltage pulse. Strong oscillations of the exciton emission wavelength were observed in the transient regime when the gate voltage pulse was carried over an ordinary wire. Gating the CQW via an impedance-matched broadband transmission line has lead to an effective elimination of these transient oscillations and expedient switching of the exciton energy to a required value within a short time, much shorter than the exciton lifetime. △ Less

Submitted 30 July, 2008; originally announced July 2008.

Comments: 9 pages including 3 figures. The following article has been accepted by Journal of Applied Physics. After it is published, it will be found at http://jap.aip.org/

Journal ref: J. Appl. Phys. 104, 063515 (2008)

Localization and interaction of indirect excitons in GaAs coupled quantum wells

Authors: Alexander High, Aaron Hammack, Leonid Butov, Leonidas Mouchliadis, Alexei Ivanov, Micah Hanson, Arthur Gossard

Abstract: We introduced an elevated trap technique and exploited it for lowering the effective temperature of indirect excitons. We observed narrow photoluminescence lines which correspond to the emission of individual states of indirect excitons in a disorder potential. We studied the effect of exciton-exciton interaction on the localized and delocalized exciton states and found that the homogeneous line… ▽ More We introduced an elevated trap technique and exploited it for lowering the effective temperature of indirect excitons. We observed narrow photoluminescence lines which correspond to the emission of individual states of indirect excitons in a disorder potential. We studied the effect of exciton-exciton interaction on the localized and delocalized exciton states and found that the homogeneous line broadening increases with density and dominates the linewidth at high densities. △ Less

Submitted 30 April, 2008; originally announced April 2008.

Journal ref: Nano Lett., 2009, 9 (5), pp 2094-2098

Effect of spatial resolution on the estimates of the coherence length of excitons in quantum wells

Authors: M. M. Fogler, Sen Yang, A. T. Hammack, L. V. Butov, A. C. Gossard

Abstract: We evaluate the effect of diffraction-limited resolution of the optical system on the estimates of the coherence length of 2D excitons deduced from the interferometric study of the exciton emission. The results are applied for refining our earlier estimates of the coherence length of a cold gas of indirect excitons in coupled quantum wells [S. Yang et al., Phys. Rev. Lett. 97, 187402(2006)]. We… ▽ More We evaluate the effect of diffraction-limited resolution of the optical system on the estimates of the coherence length of 2D excitons deduced from the interferometric study of the exciton emission. The results are applied for refining our earlier estimates of the coherence length of a cold gas of indirect excitons in coupled quantum wells [S. Yang et al., Phys. Rev. Lett. 97, 187402(2006)]. We show that the apparent coherence length is well approximated by the quadratic sum of the actual exciton coherence length and the diffraction correction given by the conventional Abbe limit divided by 3.14. In practice, accounting for diffraction is necessary only when the coherence length is smaller than about one wavelength. The earlier conclusions regarding the strong enhancement of the exciton coherence length at low temperatures remain intact. △ Less

Submitted 7 June, 2008; v1 submitted 16 April, 2008; originally announced April 2008.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 78, 035411 (2008)

Kinetics of indirect excitons in the optically-induced exciton trap

Authors: A. T. Hammack, L. V. Butov, L. Mouchliadis, A. L. Ivanov, A. C. Gossard

Abstract: We report on the kinetics of a low-temperature gas of indirect excitons in the optically-induced exciton trap. The excitons in the region of laser excitation are found to rapidly -- within 4 ns -- cool to the lattice temperature T = 1.4 K, while the excitons at the trap center are found to be cold -- essentially at the lattice temperature -- even during the excitation pulse. The loading time of… ▽ More We report on the kinetics of a low-temperature gas of indirect excitons in the optically-induced exciton trap. The excitons in the region of laser excitation are found to rapidly -- within 4 ns -- cool to the lattice temperature T = 1.4 K, while the excitons at the trap center are found to be cold -- essentially at the lattice temperature -- even during the excitation pulse. The loading time of excitons to the trap center is found to be about 40 ns, longer than the cooling time yet shorter than the lifetime of the indirect excitons. The observed time hierarchy is favorable for creating a dense and cold exciton gas in optically-induced traps and for in situ control of the gas by varying the excitation profile in space and time before the excitons recombine. △ Less

Submitted 28 June, 2007; originally announced June 2007.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B 76, 193308 (2007)