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Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride
Authors:
Hang Chi,
Yunbo Ou,
Tim B. Eldred,
Wenpei Gao,
Sohee Kwon,
Joseph Murray,
Michael Dreyer,
Robert E. Butera,
Alexandre C. Foucher,
Haile Ambaye,
Jong Keum,
Alice T. Greenberg,
Yuhang Liu,
Mahesh R. Neupane,
George J. de Coster,
Owen A. Vail,
Patrick J. Taylor,
Patrick A. Folkes,
Charles Rong,
Gen Yin,
Roger K. Lake,
Frances M. Ross,
Valeria Lauter,
Don Heiman,
Jagadeesh S. Moodera
Abstract:
Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as establ…
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Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr2Te3 epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr2Te3 near the coercive field during the magnetization switching process, owing to the presence of strain-modulated magnetic domains. The versatile interface tunability of Berry curvature in Cr2Te3 thin films offers new opportunities for topological electronics.
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Submitted 9 December, 2022; v1 submitted 5 July, 2022;
originally announced July 2022.
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Reaction pathways of BCl$_3$ for acceptor delta-do** of silicon
Authors:
Quinn Campbell,
Kevin J. Dwyer,
Sungha Baek,
Andrew D. Baczewski,
Robert E. Butera,
Shashank Misra
Abstract:
BCl$_3$ is a promising candidate for atomic-precision acceptor do** in Si, but optimizing the electrical properties of structures created with this technique requires a detailed understanding of adsorption and dissociation pathways for this precursor. Here, we use density functional theory and scanning tunneling microscopy (STM) to identify and explore these pathways for BCl$_3$ on Si(100) at di…
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BCl$_3$ is a promising candidate for atomic-precision acceptor do** in Si, but optimizing the electrical properties of structures created with this technique requires a detailed understanding of adsorption and dissociation pathways for this precursor. Here, we use density functional theory and scanning tunneling microscopy (STM) to identify and explore these pathways for BCl$_3$ on Si(100) at different annealing temperatures. We demonstrate that BCl$_3$ adsorbs selectively without a reaction barrier, and subsequently dissociates relatively easily with reaction barriers $\approx$1 eV. Using this dissociation pathway, we parameterize a Kinetic Monte Carlo model to predict B incorporation rates as a function of dosing conditions. STM is used to image BCl$_{3}$ adsorbates, identifying several surface configurations and tracking the change in their distribution as a function of the annealing temperature, matching predictions of the kinetic model well. This straightforward pathway for atomic-precision acceptor do** helps enable a wide range of applications including bipolar nanoelectronics, acceptor-based qubits, and superconducting Si.
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Submitted 27 January, 2022;
originally announced January 2022.
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Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\times$1
Authors:
Quinn Campbell,
Andrew D. Baczewski,
R. E. Butera,
Shashank Misra
Abstract:
Stochastic incorporation kinetics can be a limiting factor in the scalability of semiconductor fabrication technologies using atomic-precision techniques. While these technologies have recently been extended from donors to acceptors, the extent to which kinetics will impact single-acceptor incorporation has yet to be assessed. We develop and apply an atomistic model for the single-acceptor incorpo…
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Stochastic incorporation kinetics can be a limiting factor in the scalability of semiconductor fabrication technologies using atomic-precision techniques. While these technologies have recently been extended from donors to acceptors, the extent to which kinetics will impact single-acceptor incorporation has yet to be assessed. We develop and apply an atomistic model for the single-acceptor incorporation rates of several recently demonstrated precursor molecules: diborane (B$_2$H$_6$), boron trichloride (BCl$_3$), and aluminum trichloride in both monomer (AlCl$_3$) and dimer forms (Al$_2$Cl$_6$), to identify the acceptor precursor and dosing conditions most likely to yield deterministic incorporation. While all three precursors can achieve single-acceptor incorporation, we predict that diborane is unlikely to achieve deterministic incorporation, boron trichloride can achieve deterministic incorporation with modest heating (50 $^{\circ}$C), and aluminum trichloride can achieve deterministic incorporation at room temperature. We conclude that both boron and aluminum trichloride are promising precursors for atomic-precision single-acceptor applications, with the potential to enable the reliable production of large arrays of single-atom quantum devices.
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Submitted 24 August, 2021;
originally announced August 2021.
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Dopant Precursor Adsorption into Single-Dimer Windows: Towards Guided Self-Assembly of Dopant Arrays on Si(100)
Authors:
Matthew S. Radue,
Yifei Mo,
R. E. Butera
Abstract:
Atomically precise dopant arrays in Si are being pursued for solid-state quantum computing applications. We propose a guided self-assembly process to produce atomically precise arrays of single dopant atoms in lieu of lithographic patterning. We leverage the self-assembled c(4x2) structure formed on Br- and I-Si(100) and investigate molecular precursor adsorption into the generated array of single…
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Atomically precise dopant arrays in Si are being pursued for solid-state quantum computing applications. We propose a guided self-assembly process to produce atomically precise arrays of single dopant atoms in lieu of lithographic patterning. We leverage the self-assembled c(4x2) structure formed on Br- and I-Si(100) and investigate molecular precursor adsorption into the generated array of single-dimer window (SDW) adsorption sites with density functional theory (DFT). The adsorption of several technologically relevant dopant precursors (PH$_3$, BCl$_3$, AlCl$_3$, GaCl$_3$) into SDWs formed with various resists (H, Cl, Br, I) are explored to identify the effects of steric interactions. PH$_3$ adsorbed without barrier on all resists studied, while BCl$_3$ exhibited the largest adsorption barrier, 0.34 eV, with an I resist. Dense arrays of AlCl$_3$ were found to form within experimentally realizable conditions demonstrating the potential for the proposed use of guided self-assembly for atomically precise fabrication of dopant-based devices.
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Submitted 19 June, 2021;
originally announced June 2021.
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Imaging three phases of Iodine on Ag (111) using low-temperature scanning tunneling microscopy
Authors:
Michael Dreyer,
Joseph Murray,
Robert E. Butera
Abstract:
We investigated the adsorption of iodine on silver (111) in ultra-high vacuum. Using low-temperature scanning tunneling microscopy (LT-STM) measurements we catalog the complex surface structures on the local scale. We identified three distinct phases with increasing iodine coverage which we tentatively associate with three phases previously reported in LEED experiments (sqrt(3)x sqrt(3)R30, "trian…
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We investigated the adsorption of iodine on silver (111) in ultra-high vacuum. Using low-temperature scanning tunneling microscopy (LT-STM) measurements we catalog the complex surface structures on the local scale. We identified three distinct phases with increasing iodine coverage which we tentatively associate with three phases previously reported in LEED experiments (sqrt(3)x sqrt(3)R30, "triangular", "hexagonal"). We used Fourier space and real space analysis to fully characterize each phase. While Fourier analysis most easily connects our measurements to previous LEED studies, the real space inspection reveals local variations in the superstructures of the "hexagonal" and "triangular" phase. The latter, observed here for the first time by LT-STM, stabilized by one or two adatoms sitting at the center of a rosette-like iodine reconstruction. The most stunning discovery is that variation in the adatom separation of the "triangular" phase reconstruct the Ag (111) surface lattice.
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Submitted 19 October, 2021; v1 submitted 12 March, 2021;
originally announced March 2021.
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Area-selective deposition and B $δ$-do** of Si(100) with BCl$_{3}$
Authors:
K. J. Dwyer,
S. Baek,
Azadeh Farzaneh,
Michael Dreyer,
J. R. Williams,
R. E. Butera
Abstract:
B-doped $δ$-layers were fabricated in Si(100) using BCl$_{3}$ as a dopant precursor in ultrahigh vacuum. BCl$_{3}$ adsorbed readily at room temperature, as revealed by scanning tunneling microscopy (STM) imaging. Annealing at elevated temperatures facilitated B incorporation into the Si substrate. Secondary ion mass spectrometry (SIMS) depth profiling demonstrated a peak B concentration $>$ 1.2(1)…
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B-doped $δ$-layers were fabricated in Si(100) using BCl$_{3}$ as a dopant precursor in ultrahigh vacuum. BCl$_{3}$ adsorbed readily at room temperature, as revealed by scanning tunneling microscopy (STM) imaging. Annealing at elevated temperatures facilitated B incorporation into the Si substrate. Secondary ion mass spectrometry (SIMS) depth profiling demonstrated a peak B concentration $>$ 1.2(1) $\times$ 10$^{21}$ cm$^{-3}$ with a total areal dose of 1.85(1) $\times$ 10$^{14}$ cm$^{-2}$ resulting from a 30 L BCl$_{3}$ dose at 150 $^{\circ}$C. Hall bar measurements of a similar sample were performed at 3.0 K revealing a sheet resistance of $R_{\mathrm{s}}$ = 1.91 k$Ω\square^{-1}$, a hole concentration of $n$ = 1.90 $\times$ 10$^{14}$ cm$^{-2}$ and a hole mobility of $μ$ = 38.0 cm$^{2}$V$^{-1}$s$^{-1}$ without performing an incorporation anneal. Further, the conductivity of several B-doped $δ$-layers showed a log dependence on temperature suggestive of a two-dimensional system. Selective-area deposition of BCl$_{3}$ was also demonstrated using both H- and Cl-based monatomic resists. In comparison to a dosed area on bare Si, adsorption selectivity ratios for H and Cl resists were determined by SIMS to be 310(10):1 and 1529(5):1, respectively, further validating the use of BCl$_{3}$ as a dopant precursor for atomic precision fabrication of acceptor-doped devices in Si.
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Submitted 12 March, 2021;
originally announced March 2021.
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AlCl$_{3}$-dosed Si(100)-2$\times$1: Adsorbates, chlorinated Al chains, and incorporated Al
Authors:
Matthew S. Radue,
Sungha Baek,
Azadeh Farzaneh,
K. J. Dwyer,
Quinn Campbell,
Andrew D. Baczewski,
Ezra Bussmann,
George T. Wang,
Yifei Mo,
Shashank Misra,
R. E. Butera
Abstract:
The adsorption of AlCl$_{3}$ on Si(100) and the effect of annealing the AlCl$_{3}$-dosed substrate was studied to reveal key surface processes for the development of atomic-precision acceptor-do** techniques. This investigation was performed via scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. At room temperature, AlCl…
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The adsorption of AlCl$_{3}$ on Si(100) and the effect of annealing the AlCl$_{3}$-dosed substrate was studied to reveal key surface processes for the development of atomic-precision acceptor-do** techniques. This investigation was performed via scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. At room temperature, AlCl$_{3}$ readily adsorbed to the Si substrate dimers and dissociated to form a variety of species. Annealing of the AlCl$_{3}$-dosed substrate at temperatures below 450 $^{\circ}$C produced unique chlorinated aluminum chains (CACs) elongated along the Si(100) dimer row direction. An atomic model for the chains is proposed with supporting DFT calculations. Al was incorporated into the Si substrate upon annealing at 450 $^{\circ}$C and above, and Cl desorption was observed for temperatures beyond 450 $^{\circ}$C. Al-incorporated samples were encapsulated in Si and characterized by secondary ion mass spectrometry (SIMS) depth profiling to quantify the Al atom concentration, which was found to be in excess of 10$^{20}$ cm$^{-3}$ across a $\sim$2.7 nm thick $δ$-doped region. The Al concentration achieved here and the processing parameters utilized promote AlCl$_{3}$ as a viable gaseous precursor for novel acceptor-doped Si materials and devices for quantum computing.
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Submitted 22 January, 2021;
originally announced January 2021.
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Experimental detection of surface spin-polarized electron accumulation in topological insulators using scanning tunneling microscopy
Authors:
S. Tyagi,
M. Dreyer,
D. Bowen,
D. Hinkel,
P. J. Taylor,
A. L. Friedman,
R. E. Butera,
C. Krafft,
I. Mayergoyz
Abstract:
Spin-momentum locking in the surface mode of topological insulators (TI) leads to the surface accumulation of spin-polarized electrons caused by bias current flows through TI samples. Here, we demonstrate that scanning tunneling microscopy can be used to sense this surface spin-polarized electron accumulation. We present experimental results of this sensing for Sn-doped Bi$_2$Se$_3$ samples by emp…
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Spin-momentum locking in the surface mode of topological insulators (TI) leads to the surface accumulation of spin-polarized electrons caused by bias current flows through TI samples. Here, we demonstrate that scanning tunneling microscopy can be used to sense this surface spin-polarized electron accumulation. We present experimental results of this sensing for Sn-doped Bi$_2$Se$_3$ samples by employing Fe-coated W tips as well as non-magnetic W tips. We observe a linear increase in the spin-accumulation as a function of bias current through TI samples.
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Submitted 7 April, 2020;
originally announced April 2020.
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Study Of Surface Spin-Polarized Electron Accumulation In Topological Insulators Using Scanning Tunneling Microscopy
Authors:
S. Tyagi,
M. Dreyer,
D. Bowen,
D. Hinkel,
P. J. Taylor,
A. L. Friedman,
R. E. Butera,
C. Krafft,
I. Mayergoyz
Abstract:
The results of scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying bismuth selenide ($Bi_2Se_3$) samples are reported. Asymmetry in tunneling currents with respect to the change in the direction of bias currents through $Bi_2Se_3$ samples has been observed. It is argued that this asymmetry is the manifestation of surface spin-polarized electron accumulati…
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The results of scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying bismuth selenide ($Bi_2Se_3$) samples are reported. Asymmetry in tunneling currents with respect to the change in the direction of bias currents through $Bi_2Se_3$ samples has been observed. It is argued that this asymmetry is the manifestation of surface spin-polarized electron accumulation caused by the ninety-degree electron spin-momentum locking in the topologically protected surface current mode. It is demonstrated that the manifestation of surface spin-polarized electron accumulation is enhanced by tin do** of $Bi_2Se_3$ samples. Furthermore, the appearance of spin-dependent density of states in current carrying $Bi_2Se_3$ samples has also been observed.
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Submitted 31 October, 2019;
originally announced November 2019.
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STM-induced desorption and lithographic patterning of Cl-Si(100)-(2x1)
Authors:
K. J Dwyer,
Michael Dreyer,
R. E. Butera
Abstract:
We investigated STM-induced chlorine desorption and lithographic patterning of Cl-terminated Si(100)-(2x1) surfaces at sample temperatures from 4 K to 600 K. STM lithography has previously focused on hydrogen-based chemistry for donor device fabrication. Here, to develop halogen-based chemistries for fabricating acceptor-based devices, we substituted the hydrogen resist with chlorine. Lithographic…
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We investigated STM-induced chlorine desorption and lithographic patterning of Cl-terminated Si(100)-(2x1) surfaces at sample temperatures from 4 K to 600 K. STM lithography has previously focused on hydrogen-based chemistry for donor device fabrication. Here, to develop halogen-based chemistries for fabricating acceptor-based devices, we substituted the hydrogen resist with chlorine. Lithographic patterning was explored using both field emission patterning to desorb chlorine from large areas as well as atomic precision patterning to desorb chlorine along one to two dimer rows at a time. We varied the experimental parameters for lithographic patterning and found a positive correlation between pattern line widths and both sample bias voltage and total electron dose. Finally, the use of chlorine, bromine, and iodine as lithographic resists to broaden the range of available chemistries for future device fabrication utilizing halogen-based dopant precursors is discussed.
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Submitted 14 July, 2019; v1 submitted 16 August, 2018;
originally announced August 2018.
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Coulomb blockade regions in sputter-deposited titanium nitride films
Authors:
Michael Dreyer,
Peng Xu,
Kevin D. Osborn,
R. E. Butera
Abstract:
We present topographic and spectroscopic scanning tunneling microscopy measurements taken on a 21 nm thick TiN film at a temperature of 4.2 K -- above the superconducting transition temperature (T_c = 3.8 K) of the sample. The film was polycrystalline with crystallite diameters of d~19 nm, consistent with other films prepared under similar conditions. The spectroscopic maps show on average a shall…
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We present topographic and spectroscopic scanning tunneling microscopy measurements taken on a 21 nm thick TiN film at a temperature of 4.2 K -- above the superconducting transition temperature (T_c = 3.8 K) of the sample. The film was polycrystalline with crystallite diameters of d~19 nm, consistent with other films prepared under similar conditions. The spectroscopic maps show on average a shallow V-shape around V_b = 0 V consistent with a sample near the Mott insulation transition. In selected regions on several samples we additionally observed signs of Coulomb blockade. The corresponding peak structures are typically asymmetric with respect to bias voltage indicating coupling to two very different tunneling barriers. Furthermore, the peak structures appear with constant peak-peak spacing which indicates quantum dot states within the Coulomb blockade island. In this paper we discuss one such Coulomb blockade area and its implications in detail.
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Submitted 18 April, 2018;
originally announced April 2018.
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On local sensing of spin Hall effect in tungsten films by using STM-based measurements
Authors:
Ting Xie,
Michael Dreyer,
David Bowen,
Dan Hinkel,
R. E. Butera,
Charles Krafft,
Isaak Mayergoyz
Abstract:
The spin Hall effect in tungsten films has been experimentally studied by using STM-based measurements. These measurements have been performed by using tungsten and iron coated tungsten tips. In the case of tungsten tips, it has been observed that the current flow through the tungsten film results in an appreciable asymmetry in the tunneling current with respect to the change in the polarity of th…
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The spin Hall effect in tungsten films has been experimentally studied by using STM-based measurements. These measurements have been performed by using tungsten and iron coated tungsten tips. In the case of tungsten tips, it has been observed that the current flow through the tungsten film results in an appreciable asymmetry in the tunneling current with respect to the change in the polarity of the tunneling voltage. It is reasoned that the cause of this asymmetry is the accumulation of spin polarized electrons on the tungsten film surface due to the spin Hall effect. This asymmetry is not affected by the change of the direction of the bias current through the film. However, in the case of iron coated tungsten tips, it has been observed that a change in the direction of the bias current does lead to an additional asymmetry in the tunneling current. It is thus experimentally demonstrated that this asymmetry is caused by the SHE and spin-dependent density of states of iron-coated tips.
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Submitted 10 October, 2017; v1 submitted 19 July, 2017;
originally announced July 2017.
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A scanning tunneling microscopy based potentiometry technique and its application to the local sensing of the spin Hall effect
Authors:
Ting Xie,
Michael Dreyer,
David Bowen,
Dan Hinkel,
R. E. Butera,
Charles Krafft,
Isaak Mayergoyz
Abstract:
A scanning tunneling microscopy based potentiometry technique for the measurements of the local surface electric potential is presented and illustrated by experiments performed on current-carrying thin tungsten films. The obtained results demonstrate a sub-millivolt resolution in the measured surface potential. The application of this potentiometry technique to the local sensing of the spin Hall e…
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A scanning tunneling microscopy based potentiometry technique for the measurements of the local surface electric potential is presented and illustrated by experiments performed on current-carrying thin tungsten films. The obtained results demonstrate a sub-millivolt resolution in the measured surface potential. The application of this potentiometry technique to the local sensing of the spin Hall effect is outlined and some experimental results are reported.
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Submitted 23 June, 2017;
originally announced June 2017.
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Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy
Authors:
E. N. Yitamben,
R. E. Butera,
B. S. Swartzentruber,
R. J. Simonson,
S. Misra,
M. S. Carroll,
E. Bussmann
Abstract:
Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2D adatom islanding to step-flow growth, systematic controlled air leaks into the growth chamber induce pits in the growth surface. We show that pits are also correlated with oxygen-contaminated flux from Si sublimation s…
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Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2D adatom islanding to step-flow growth, systematic controlled air leaks into the growth chamber induce pits in the growth surface. We show that pits are also correlated with oxygen-contaminated flux from Si sublimation sources. From a thermodynamic standpoint, multilayer growth pits are unexpected in relaxed homoepitaxial growth, whereas oxidation is a known cause for step pinning, roughening, and faceting on elemental surfaces, both with and without growth flux. Not surprisingly, pits are thermodynamically metastable and heal by annealing to recover a smooth periodic step arrangement. STM reveals new details about the pits' atomistic origins and growth dynamics. We give a model for heterogeneous nucleation of pits by preferential adsorption of Å-sized oxide nuclei at intrinsic growth antiphase boundaries, and subsequent step pinning and bunching around the nuclei.
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Submitted 15 June, 2017;
originally announced June 2017.
