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Towards edge engineering of two-dimensional layered transition-metal dichalcogenides by chemical vapor deposition
Authors:
Wei Fu,
Mark John,
Thathsara D. Maddumapatabandi,
Fabio Bussolotti,
Yong Sean Yau,
Ming Lin,
Kuan Eng Johnson Goh
Abstract:
The manipulation of edge configurations and structures in atomically thin transition metal dichalcogenides (TMDs) for versatile functionalization has attracted intensive interest in recent years. The chemical vapor deposition (CVD) approach has shown promise for TMD edge engineering of atomic edge configurations (1H, 1T or 1T'-zigzag or armchair edges), as well as diverse edge morphologies (1D nan…
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The manipulation of edge configurations and structures in atomically thin transition metal dichalcogenides (TMDs) for versatile functionalization has attracted intensive interest in recent years. The chemical vapor deposition (CVD) approach has shown promise for TMD edge engineering of atomic edge configurations (1H, 1T or 1T'-zigzag or armchair edges), as well as diverse edge morphologies (1D nanoribbons, 2D dendrites, 3D spirals, etc). These rich-edge TMD layers offer versatile candidates for probing the physical and chemical properties, and exploring new applications in electronics, optoelectronics, catalysis, sensing and quantum field. In this review, we present an overview of the current state-of-the-art in the manipulation of TMD atomic edges and edge-rich structures using CVD. We highlight the vast range of unique properties associated with these edge configurations and structures and provide insights into the opportunities afforded by such edge-functionalized crystals. The objective of this review is to motivate further research and development efforts in using CVD as a scalable approach to harness the benefits of such crystal-edge engineering.
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Submitted 25 April, 2024;
originally announced April 2024.
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Driving non-trivial quantum phases in conventional semiconductors with intense excitonic fields
Authors:
Vivek Pareek,
David R. Bacon,
Xing Zhu,
Yang-Hao Chan,
Fabio Bussolotti,
Nicholas S. Chan,
Joel Pérez Urquizo,
Kenji Watanabe,
Takashi Taniguchi,
Michael K. L. Man,
Julien Madéo,
Diana Y. Qiu,
Kuan Eng Johnson Goh,
Felipe H. da Jornada,
Keshav M. Dani
Abstract:
Inducing novel quantum phases and topologies in materials using intense light fields is a key objective of modern condensed matter physics, but nonetheless faces significant experimental challenges. Alternately, theory predicts that in the dense limit, excitons - collective excitations composed of Coulomb-bound electron-hole pairs - could also drive exotic quantum phenomena. However, the direct ob…
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Inducing novel quantum phases and topologies in materials using intense light fields is a key objective of modern condensed matter physics, but nonetheless faces significant experimental challenges. Alternately, theory predicts that in the dense limit, excitons - collective excitations composed of Coulomb-bound electron-hole pairs - could also drive exotic quantum phenomena. However, the direct observation of these phenomena requires the resolution of electronic structure in momentum space in the presence of excitons, which became possible only recently. Here, using time- and angle-resolved photoemission spectroscopy of an atomically thin semiconductor in the presence of a high-density of resonantly and coherently photoexcited excitons, we observe the Bardeen-Cooper-Schrieffer (BCS) excitonic state - analogous to the Cooper pairs of superconductivity. We see the valence band transform from a conventional paraboloid into a Mexican-hat like Bogoliubov dispersion - a hallmark of the excitonic insulator phase; and we observe the recently predicted giant exciton-driven Floquet effects. Our work realizes the promise that intense bosonic fields, other than photons, can also drive novel quantum phenomena and phases in materials.
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Submitted 13 March, 2024;
originally announced March 2024.
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Liquid Metal Printed Ultrathin Oxides for Monolayer WS2 Top-Gate Transistors
Authors:
Yiyu Zhang,
Dasari Venkatakrishnarao,
Michel Bosman,
Wei Fu,
Sarthak Das,
Fabio Bussolotti,
Rainer Lee,
Siew Lang Teo,
Ding Huang,
Ivan Verzhbitskiy,
Zhuojun Jiang,
Zhuoling Jiang,
Jian Wei Chai,
Shi Wun Tong,
Zi-En Ooi,
Calvin Pei Yu Wong,
Yee Sin Ang,
Kuan Eng Johnson Goh,
Chit Siong Lau
Abstract:
Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here,…
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Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here, we report liquid metal printed ultrathin and scalable Ga2O3 dielectric for 2D electronics and electro-optical devices. We directly visualize the atomically smooth Ga2O3/WS2 interfaces enabled by the conformal nature of liquid metal printing. We demonstrate atomic layer deposition compatibility with high-k Ga2O3/HfO2 top-gate dielectric stacks on chemical vapour deposition grown monolayer WS2, achieving EOTs of ~1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultra-scaled low-power logic circuits. Our results show that liquid metal printed oxides can bridge a crucial gap in scalable dielectric integration of 2D materials for next-generation nano-electronics.
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Submitted 25 October, 2022;
originally announced October 2022.
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Evidence of Spin Frustration in Vanadium Diselenide Monolayer Magnet
Authors:
** Kwan Johnny Wong,
Wen Zhang,
Fabio Bussolotti,
Xinmao Yin,
Tun Seng Herng,
Lei Zhang,
Yu Li Huang,
Giovanni Vinai,
Sridevi Krishnamurthi,
Danil W Bukhvalov,
Yu Jie Zheng,
Rebekah Chua,
Alpha T N Diaye,
Simon A. Morton,
Chao-Yao Yang,
Kui-Hon Ou Yang,
Piero Torelli,
Wei Chen,
Kuan Eng Johnson Goh,
Jun Ding,
Minn-Tsong Lin,
Geert Brocks,
Michel P de Jong,
Antonio H Castro Neto,
Andrew Thye Shen Wee
Abstract:
Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption,…
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Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, direct spectroscopic signatures are established, that identify the metallic 1T-phase and vanadium 3d1 electronic configuration in monolayer VSe2 grown on graphite by molecular-beam epitaxy. Element-specific X-ray magnetic circular dichroism, complemented with magnetic susceptibility measurements, further reveals monolayer VSe2 as a frustrated magnet, with its spins exhibiting subtle correlations, albeit in the absence of a long-range magnetic order down to 2 K and up to a 7 T magnetic field. This observation is attributed to the relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic-scale structural features, such as rotational disorders and edges. The results of this study extend the current understanding of metallic 2D-TMDs in the search for exotic low-dimensional quantum phenomena, and stimulate further theoretical and experimental studies on van der Waals monolayer magnets.
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Submitted 6 June, 2022;
originally announced June 2022.
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Tuning Conductivity Type in Monolayer WS2 and MoS2 by Sulfur Vacancies
Authors:
**g Yang,
Fabio Bussolotti,
Hiroyo Kawai,
Kuan Eng Johnson Goh
Abstract:
While n-type semiconductor behavior appears to be more common in as-prepared two-dimensional (2D) transition metal dichalcogenides (TMDCs), substitutional do** with acceptor atoms is typically required to tune the conductivity to p-type in order to facilitate their potential application in different devices. Here, we report a systematic study on the equivalent electrical "do**" effect of - sin…
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While n-type semiconductor behavior appears to be more common in as-prepared two-dimensional (2D) transition metal dichalcogenides (TMDCs), substitutional do** with acceptor atoms is typically required to tune the conductivity to p-type in order to facilitate their potential application in different devices. Here, we report a systematic study on the equivalent electrical "do**" effect of - single sulfur vacancies (V1S) in monolayer WS2 and MoS2 by studying the interface interaction of WS2-Au and MoS2-Au contacts. Based on our first principles calculations, we found that the V1S can significantly alter the semiconductor behavior of both monolayer WS2 and MoS2 so that they can exhibit the character of electron acceptor (p-type) as well as electron donor (n-type) when they are contacted with gold. For relatively low V1S densities (approximately < 7% for MoS2 and < 3% for WS2), the monolayer TMDC serves as electron acceptor. As the V1S density increases beyond the threshold densities, the MoS2 and WS2 play the role of electron donor. The significant impact V1S can have on monolayer WS2 and MoS2 may be useful for engineering its electrical behavior and offers an alternative way to tune the semiconductor TMDCs to exhibit either n-type or p-type behavior.
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Submitted 7 July, 2020;
originally announced July 2020.
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Toward Valley-coupled Spin Qubits
Authors:
Kuan Eng Johnson Goh,
Fabio Bussolotti,
Chit Siong Lau,
Dharmraj Kotekar-Patil,
Zi En Ooi,
**gyee Chee
Abstract:
The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for conventional semiconductor processing. However, material control is a significant challenge for solid-state spin qubits as residual spins from substrate, dielectri…
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The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for conventional semiconductor processing. However, material control is a significant challenge for solid-state spin qubits as residual spins from substrate, dielectric, electrodes or contaminants from processing contribute to spin decoherence. In the recent decade, valleytronics has seen a revival due to the discovery of valley-coupled spins in monolayer transition metal dichalcogenides. Such valley-coupled spins are protected by inversion asymmetry and time-reversal symmetry and are promising candidates for robust qubits. In this report, the progress toward building such qubits is presented. Following an introduction to the key attractions in fabricating such qubits, an up-to-date brief is provided for the status of each key step, highlighting advancements made and/or outstanding work to be done. This report concludes with a perspective on future development highlighting major remaining milestones toward scalable spin-valley qubits.
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Submitted 22 April, 2020; v1 submitted 13 April, 2020;
originally announced April 2020.
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Evidence for metallic 1T phase, 3d1 electronic configuration and charge density wave order in molecular-beam epitaxy grown monolayer VTe2
Authors:
** Kwan Johnny Wong,
Wen Zhang,
Jun Zhou,
Fabio Bussolotti,
Xinmao Yin,
Lei Zhang,
Alpha T. NDiaye,
Simon A Morton,
Wei Chen,
Kuan Eng Johnson Goh,
Michel P de Jong,
Yuan ** Feng,
Andrew Thye Shen Wee
Abstract:
We present a combined experimental and theoretical study of monolayer VTe2 grown on highly oriented pyrolytic graphite by molecular-beam epitaxy. Using various in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, together with theoretical analysis by density functional theor…
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We present a combined experimental and theoretical study of monolayer VTe2 grown on highly oriented pyrolytic graphite by molecular-beam epitaxy. Using various in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, together with theoretical analysis by density functional theory calculations, we demonstrate direct evidence of the metallic 1T phase and 3d1 electronic configuration in monolayer VTe2 that also features a (4 x 4) charge density wave order at low temperatures. In contrast to previous theoretical predictions, our element-specific characterization by X-ray magnetic circular dichroism rules out a ferromagnetic order intrinsic to the monolayer. Our findings provide essential knowledge necessary for understanding this interesting yet less explored metallic monolayer in the emerging family of van der Waals magnets.
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Submitted 14 July, 2019;
originally announced July 2019.
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Accessing surface Brillouin zone and band structure of picene single crystals
Authors:
Qian Xin,
Steffen Duhm,
Fabio Bussolotti,
Kouki Akaike,
Yoshihiro Kubozono,
Hideo Aoki,
Taichi Kosugi,
Satoshi Kera,
Nobuo Ueno
Abstract:
We have experimentally revealed the band structure and the surface Brillouin zone of insulating picene single crystals (SCs), the mother organic system for a recently discovered aromatic superconductor, with ultraviolet photoelectron spectroscopy (UPS) and low-energy electron diffraction with laser for photoconduction. A hole effective mass of 2.24 m_0 and the hole mobility mu_h >= 9.0 cm^2/Vs (29…
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We have experimentally revealed the band structure and the surface Brillouin zone of insulating picene single crystals (SCs), the mother organic system for a recently discovered aromatic superconductor, with ultraviolet photoelectron spectroscopy (UPS) and low-energy electron diffraction with laser for photoconduction. A hole effective mass of 2.24 m_0 and the hole mobility mu_h >= 9.0 cm^2/Vs (298 K) were deduced in Gamma-Y direction. We have further shown that some picene SCs did not show charging during UPS even without the laser, which indicates that pristine UPS works for high-quality organic SCs.
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Submitted 9 October, 2012; v1 submitted 18 April, 2012;
originally announced April 2012.
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Field emission from single multi-wall carbon nanotubes
Authors:
M. Passacantando,
F. Bussolotti,
S. Santucci,
A. Di Bartolomeo,
F. Giubileo,
L. Iemmo,
A. M. Cucolo
Abstract:
Electron field emission characteristics of individual multiwalled carbon nanotubes have been investigated by a piezoelectric nanomanipulation system operating inside a scanning electron microscopy chamber. The experimental setup ensures a high control capability on the geometric parameters of the field emission system (CNT length, diameter and anode-cathode distance). For several multiwalled car…
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Electron field emission characteristics of individual multiwalled carbon nanotubes have been investigated by a piezoelectric nanomanipulation system operating inside a scanning electron microscopy chamber. The experimental setup ensures a high control capability on the geometric parameters of the field emission system (CNT length, diameter and anode-cathode distance). For several multiwalled carbon nanotubes, reproducible and quite stable emission current behaviour has been obtained with a dependence on the applied voltage well described by a series resistance modified Fowler-Nordheim model. A turn-on field of about 30 V/um and a field enhancement factor of around 100 at a cathode-anode distance of the order of 1 um have been evaluated. Finally, the effect of selective electron beam irradiation on the nanotube field emission capabilities has been extensively investigated.
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Submitted 6 March, 2008;
originally announced March 2008.
