Protecting a diamond quantum memory by charge state control
Authors:
Matthias Pfender,
Nabeel Aslam,
Patrick Simon,
Denis Antonov,
Gergő Thiering,
Sina Burk,
Felipe Fávaro de Oliveira,
Andrej Denisenko,
Helmut Fedder,
Jan Meijer,
Jose Antonio Garrido,
Adam Gali,
Tokuyuki Teraji,
Junichi Isoya,
Marcus William Doherty,
Audrius Alkauskas,
Alejandro Gallo,
Andreas Grüneis,
Philipp Neumann,
Jörg Wrachtrup
Abstract:
In recent years, solid-state spin systems have emerged as promising candidates for quantum information processing (QIP). Prominent examples are the Nitrogen-Vacancy (NV) center in diamond, phosphorous dopants in silicon (Si:P), rare-earth ions in solids and V$_{\text{Si}}$-centers in Silicon-carbide (SiC). The Si:P system has demonstrated, that by eliminating the electron spin of the dopant, its n…
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In recent years, solid-state spin systems have emerged as promising candidates for quantum information processing (QIP). Prominent examples are the Nitrogen-Vacancy (NV) center in diamond, phosphorous dopants in silicon (Si:P), rare-earth ions in solids and V$_{\text{Si}}$-centers in Silicon-carbide (SiC). The Si:P system has demonstrated, that by eliminating the electron spin of the dopant, its nuclear spins can yield exceedingly long spin coherence times. For NV centers, however, a proper charge state for storage of nuclear spin qubit coherence has not been identified yet. Here, we identify and characterize the positively charged NV center as an electron-spin-less and optically inactive state by utilizing the nuclear spin qubit as a probe. We control the electronic charge and spin utilizing nanometer scale gate electrodes. We achieve a lengthening of the nuclear spin coherence times by a factor of 20. Surprisingly, the new charge state allows switching the optical response of single nodes facilitating full individual addressability.
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Submitted 6 February, 2017;
originally announced February 2017.
