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Emergence of Interlayer Coherence in Twist-Controlled Graphene Double Layers
Authors:
Kenneth Lin,
Nitin Prasad,
G. William Burg,
Bo Zou,
Keiji Ueno,
Kenji Watanabe,
Takashi Taniguchi,
Allan H. MacDonald,
Emanuel Tutuc
Abstract:
We report enhanced interlayer tunneling with reduced linewidth at zero interlayer bias in a twist-controlled double monolayer graphene heterostructure in the quantum Hall regime, when the top ($ν_{\mathrm{T}}$) and bottom ($ν_{\mathrm{B}}$) layer filling factors are near $ν_{\mathrm{T}}=\pm1/2, \pm3/2$ and $ν_{\mathrm{B}}=\pm1/2, \pm3/2$, and the total filling factor $ν= \pm1$ or $\pm3$. The zero-…
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We report enhanced interlayer tunneling with reduced linewidth at zero interlayer bias in a twist-controlled double monolayer graphene heterostructure in the quantum Hall regime, when the top ($ν_{\mathrm{T}}$) and bottom ($ν_{\mathrm{B}}$) layer filling factors are near $ν_{\mathrm{T}}=\pm1/2, \pm3/2$ and $ν_{\mathrm{B}}=\pm1/2, \pm3/2$, and the total filling factor $ν= \pm1$ or $\pm3$. The zero-bias interlayer conductance peaks are stable against variations of layer filling factor, and signal the emergence of interlayer phase coherence. Our results highlight twist control as a key attribute in revealing interlayer coherence using tunneling.
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Submitted 21 November, 2022; v1 submitted 23 June, 2022;
originally announced June 2022.
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Emergence of Correlations in Alternating Twist Quadrilayer Graphene
Authors:
G. William Burg,
Eslam Khalaf,
Yimeng Wang,
Kenji Watanabe,
Takashi Taniguchi,
Emanuel Tutuc
Abstract:
Recently, alternating twist multilayer graphene (ATMG) has emerged as a family of moiré systems that share several fundamental properties with twisted bilayer graphene, and are expected to host similarly strong electron-electron interactions near the magic angle. Here, we study alternating twist quadrilayer graphene (ATQG) samples with twist angles of 1.96° and 1.52°, which are slightly removed fr…
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Recently, alternating twist multilayer graphene (ATMG) has emerged as a family of moiré systems that share several fundamental properties with twisted bilayer graphene, and are expected to host similarly strong electron-electron interactions near the magic angle. Here, we study alternating twist quadrilayer graphene (ATQG) samples with twist angles of 1.96° and 1.52°, which are slightly removed from the magic angle of 1.68°. At the larger angle, we find signatures of correlated insulators only when the ATQG is hole doped, and no signatures of superconductivity, and for the smaller angle we find evidence of superconductivity, while signs of the correlated insulators weaken. Our results provide insight into the twist angle dependence of correlated phases in ATMG and shed light on the nature of correlations in the intermediate coupling regime at the edge of the magic angle range where dispersion and interaction are of the same order.
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Submitted 11 May, 2022; v1 submitted 5 January, 2022;
originally announced January 2022.
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Quantum Lifetime Spectroscopy and Magnetotunneling in Double Bilayer Graphene Heterostructures
Authors:
Nitin Prasad,
G. William Burg,
Kenji Watanabe,
Takashi Taniguchi,
Leonard F. Register,
Emanuel Tutuc
Abstract:
We describe a tunneling spectroscopy technique in a double bilayer graphene heterostructure where momentum-conserving tunneling between different energy bands serves as an energy filter for the tunneling carriers, and allows a measurement of the quasi-particle state broadening at well defined energies. The broadening increases linearly with the excited state energy with respect to the Fermi level,…
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We describe a tunneling spectroscopy technique in a double bilayer graphene heterostructure where momentum-conserving tunneling between different energy bands serves as an energy filter for the tunneling carriers, and allows a measurement of the quasi-particle state broadening at well defined energies. The broadening increases linearly with the excited state energy with respect to the Fermi level, and is weakly dependent on temperature. In-plane magnetotunneling reveals a high degree of rotational alignment between the graphene bilayers, and an absence of momentum randomizing processes.
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Submitted 4 August, 2021; v1 submitted 14 May, 2021;
originally announced May 2021.
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Bulk and Edge Properties of Twisted Double-Bilayer Graphene
Authors:
Yimeng Wang,
Jonah Herzog-Arbeitman,
G. William Burg,
Jihang Zhu,
Kenji Watanabe,
Takashi Taniguchi,
Allan H. MacDonald,
B. Andrei Bernevig,
Emanuel Tutuc
Abstract:
The emergence of controlled, two-dimensional moiré materials has uncovered a new platform for investigating topological physics. Twisted double bilayer graphene (TDBG) has been predicted to host a topologically non-trivial gapped phase with Chern number equal to two at charge neutrality, when half the flat bands are filled. However, it can be difficult to diagnose topological states using a single…
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The emergence of controlled, two-dimensional moiré materials has uncovered a new platform for investigating topological physics. Twisted double bilayer graphene (TDBG) has been predicted to host a topologically non-trivial gapped phase with Chern number equal to two at charge neutrality, when half the flat bands are filled. However, it can be difficult to diagnose topological states using a single measurement because it is ideal to probe the bulk and edge properties at the same time. Here, we report a combination of chemical potential measurements, transport measurements, and theoretical calculations that show that twisted double bilayer graphene can host metallic edge transport while simultaneously being insulating in the bulk. A Landauer-Buttiker analysis of measurements on multi-terminal samples allows us to quantitatively assess edge state scattering. We interpret these results as signatures of the predicted topological phase at charge neutrality.
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Submitted 10 October, 2021; v1 submitted 10 January, 2021;
originally announced January 2021.
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Evidence of Emergent Symmetry and Valley Chern Number in Twisted Double-Bilayer Graphene
Authors:
G. William Burg,
Biao Lian,
Takashi Taniguchi,
Kenji Watanabe,
B. Andrei Bernevig,
Emanuel Tutuc
Abstract:
Twisted double bilayer graphene (TDBG) under a transverse electric field is predicted to exhibit a topological valley Chern number 2 at charge neutrality, protected by an emergent valley symmetry, which can manifest in the Hofstadter spectra. Here, we report the experimental observation of a universal closing of the charge neutrality gap of TDBG at 1=2 magnetic flux per unit cell, which is in agre…
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Twisted double bilayer graphene (TDBG) under a transverse electric field is predicted to exhibit a topological valley Chern number 2 at charge neutrality, protected by an emergent valley symmetry, which can manifest in the Hofstadter spectra. Here, we report the experimental observation of a universal closing of the charge neutrality gap of TDBG at 1=2 magnetic flux per unit cell, which is in agreement with theoretical predictions for a valley Chern number 2 gap, and provides evidence for both the emergent symmetry and valley Chern bands. Furthermore, our theoretical analysis of the interaction effect and experimental data shows that the interaction energy is larger than the flat-band bandwidth in TDBG near 1 degree, but does not alter the emergent valley symmetry and the single-particle band topology.
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Submitted 26 June, 2020; v1 submitted 24 June, 2020;
originally announced June 2020.
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Correlated Insulating States in Twisted Double Bilayer Graphene
Authors:
G. William Burg,
Jihang Zhu,
Takashi Taniguchi,
Kenji Watanabe,
Allan H. MacDonald,
Emanuel Tutuc
Abstract:
We present a combined experimental and theoretical study of twisted double bilayer graphene with twist angles between 1° and 1.35°. Consistent with moiré band structure calculations, we observe insulators at integer moiré band fillings one and three, but not two. An applied transverse electric field separates the first moiré conduction band from neighbouring bands, and favors the appearance of cor…
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We present a combined experimental and theoretical study of twisted double bilayer graphene with twist angles between 1° and 1.35°. Consistent with moiré band structure calculations, we observe insulators at integer moiré band fillings one and three, but not two. An applied transverse electric field separates the first moiré conduction band from neighbouring bands, and favors the appearance of correlated insulators at 1/4, 1/2, and 3/4 band filling. Insulating states at 1/4 and 3/4 band filling emerge only in a parallel magnetic field (B_{||}), whereas the resistance at half band filling is weakly dependent on B_{||}. These findings suggest that correlated insulators are favored when a moiré flat band is spectrally isolated, with spin polarization at 1/4 and 3/4 band filling and valley polarization at 1/2 band filling.
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Submitted 21 November, 2019; v1 submitted 23 July, 2019;
originally announced July 2019.
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Tunneling and Fluctuating Electron-Hole Cooper Pairs in Double Bilayer Graphene
Authors:
Dmitry K. Efimkin,
G. William Burg,
Emanuel Tutuc,
Allan H. MacDonald
Abstract:
A strong low-temperature enhancement of the tunneling conductance between graphene bilayers has been reported recently, and interpreted as a signature of equilibrium electron-hole pairing, first predicted in bilayers more than forty years ago but previously unobserved. Here we provide a detailed theory of conductance enhanced by fluctuating electron-hole Cooper pairs, which are a precursor to equi…
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A strong low-temperature enhancement of the tunneling conductance between graphene bilayers has been reported recently, and interpreted as a signature of equilibrium electron-hole pairing, first predicted in bilayers more than forty years ago but previously unobserved. Here we provide a detailed theory of conductance enhanced by fluctuating electron-hole Cooper pairs, which are a precursor to equilibrium pairing, that accounts for specific details of the multi-band double graphene bilayer system which supports several different pairing channels. Above the equilibrium condensation temperature, pairs have finite temporal coherence and do not support dissipationless tunneling. Instead, they strongly boost the tunneling conductivity via a fluctuational internal Josephson effect. Our theory makes predictions for the dependence of the zero bias peak in the differential tunneling conductance on temperature and electron-hole density imbalance that capture important aspects of the experimental observations. In our interpretation of the observations, cleaner samples with longer disorder scattering times would condense at temperatures $T_c$ up to $\sim 50 {\rm K}$, compared to the record $T_c \sim 1.5 $K achieved to date in the experiment.
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Submitted 12 January, 2020; v1 submitted 18 March, 2019;
originally announced March 2019.
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Interlayer Exciton Laser with Extended Spatial Coherence in an Atomically-Thin Heterostructure
Authors:
Eunice Y. Paik,
Long Zhang,
G. William Burg,
Rahul Gogna,
Emanuel Tutuc,
Hui Deng
Abstract:
Two-dimensional semiconductors have emerged as a new class of materials for nanophotonics for their strong exciton-photon interaction and flexibility for engineering and integration. Taking advantage of these properties, we engineer an efficient lasing medium based on dipolar interlayer excitons, in rotationally aligned atomically thin heterostructures. Lasing is measured from a transition metal d…
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Two-dimensional semiconductors have emerged as a new class of materials for nanophotonics for their strong exciton-photon interaction and flexibility for engineering and integration. Taking advantage of these properties, we engineer an efficient lasing medium based on dipolar interlayer excitons, in rotationally aligned atomically thin heterostructures. Lasing is measured from a transition metal dichalcogenide hetero-bilayer integrated in a silicon nitride grating resonator. A sharp increase in the spatial coherence of the emission was observed across the lasing threshold. The work establishes interlayer excitons in two-dimensional heterostructures as a silicon-compatible coherent medium. With electrically tunable light-matter interaction strength and long-range dipolar interactions, these interlayer excitons promise both applications to low-power, ultrafast laser and modulators and rich many-body quantum phenomena.
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Submitted 2 January, 2019;
originally announced January 2019.
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Highly Valley-Polarized Singlet and Triplet Interlayer Excitons in van der Waals Heterostructure
Authors:
Long Zhang,
Rahul Gogna,
G. William Burg,
Jason Horng,
Eunice Paik,
Yu-Hsun Chou,
Kyounghwan Kim,
Emanuel Tutuc,
Hui Deng
Abstract:
Two-dimensional semiconductors feature valleytronics phenomena due to locking of the spin and momentum valley of the electrons. However, the valley polarization is intrinsically limited in monolayer crystals by the fast intervalley electron-hole exchange. Hetero-bilayer crystals have been shown to have a longer exciton lifetime and valley depolarization time. But the reported valley polarization w…
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Two-dimensional semiconductors feature valleytronics phenomena due to locking of the spin and momentum valley of the electrons. However, the valley polarization is intrinsically limited in monolayer crystals by the fast intervalley electron-hole exchange. Hetero-bilayer crystals have been shown to have a longer exciton lifetime and valley depolarization time. But the reported valley polarization was low; the valley selection rules and mechanisms of valley depolarization remains controversial. Here, we report singlet and brightened triplet interlayer excitons both with over 80% valley polarizations, cross- and co-polarized with the pump laser, respectively. This is achieved in WSe2/MoSe2 hetero-bilayers with precise momentum valley alignment and narrow emission linewidth. The high valley polarizations allow us to identify the band minima in a hetero-structure and con_rm unambiguously the direct band-gap exciton transition, ultrafast charge separation, strongly suppressed valley depolarization. Our results pave the way for using semiconductor heterobilayers to control valley selection rules for valleytronic applications.
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Submitted 31 January, 2019; v1 submitted 1 January, 2019;
originally announced January 2019.
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Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures
Authors:
Kyounghwan Kim,
Nitin Prasad,
Hema C. P. Movva,
G. William Burg,
Yimeng Wang,
Stefano Larentis,
Takashi Taniguchi,
Kenji Watanabe,
Leonard F. Register,
Emanuel Tutuc
Abstract:
We investigate interlayer tunneling in heterostructures consisting of two tungsten diselenide (WSe2) monolayers with controlled rotational alignment, and separated by hexagonal boron nitride. In samples where the two WSe2 monolayers are rotationally aligned we observe resonant tunneling, manifested by a large conductance and negative differential resistance in the vicinity of zero interlayer bias,…
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We investigate interlayer tunneling in heterostructures consisting of two tungsten diselenide (WSe2) monolayers with controlled rotational alignment, and separated by hexagonal boron nitride. In samples where the two WSe2 monolayers are rotationally aligned we observe resonant tunneling, manifested by a large conductance and negative differential resistance in the vicinity of zero interlayer bias, which stem from energy- and momentum-conserving tunneling. Because the spin-orbit coupling leads to coupled spin-valley degrees of freedom, the twist between the two WSe2 monolayers allows us to probe the conservation of spin-valley degree of freedom in tunneling. In heterostructures where the two WSe2 monolayers have a 180° relative twist, such that the Brillouin zone of one layer is aligned with the time-reversed Brillouin zone of the opposite layer, the resonant tunneling between the layers is suppressed. These findings provide evidence that in addition to momentum, the spin-valley degree of freedom is also conserved in vertical transport.
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Submitted 7 September, 2018;
originally announced September 2018.
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Strongly enhanced tunneling at total charge neutrality in double bilayer graphene-WSe$_2$ heterostructures
Authors:
G. William Burg,
Nitin Prasad,
Kyounghwan Kim,
Takashi Taniguchi,
Kenji Watanabe,
Allan H. MacDonald,
Leonard F. Register,
Emanuel Tutuc
Abstract:
We report the experimental observation of strongly enhanced tunneling between graphene bilayers through a WSe$_2$ barrier when the graphene bilayers are populated with carriers of opposite polarity and equal density. The enhanced tunneling increases sharply in strength with decreasing temperature, and the tunneling current exhibits a vertical onset as a function of interlayer voltage at a temperat…
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We report the experimental observation of strongly enhanced tunneling between graphene bilayers through a WSe$_2$ barrier when the graphene bilayers are populated with carriers of opposite polarity and equal density. The enhanced tunneling increases sharply in strength with decreasing temperature, and the tunneling current exhibits a vertical onset as a function of interlayer voltage at a temperature of 1.5 K. The strongly enhanced tunneling at overall neutrality departs markedly from single-particle model calculations that otherwise match the measured tunneling current-voltage characteristics well, and suggests the emergence of a many-body state with condensed interbilayer excitons when electrons and holes of equal densities populate the two layers.
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Submitted 13 April, 2018; v1 submitted 20 February, 2018;
originally announced February 2018.
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Photonic-Crystal Exciton-Polaritons in Monolayer Semiconductors
Authors:
Long Zhang,
Rahul Gogna,
Will Burg,
Emanuel Tutuc,
Hui Deng
Abstract:
Semiconductor microcavity polaritons, formed via strong exciton-photon coupling, provide a quantum many-body system on a chip, featuring rich physics phenomena for better photonic technology. However, conventional polariton cavities are bulky, difficult to integrate, and inflexible for mode control, especially for room temperature materials. Here we demonstrate sub-wavelength thick one-dimensional…
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Semiconductor microcavity polaritons, formed via strong exciton-photon coupling, provide a quantum many-body system on a chip, featuring rich physics phenomena for better photonic technology. However, conventional polariton cavities are bulky, difficult to integrate, and inflexible for mode control, especially for room temperature materials. Here we demonstrate sub-wavelength thick one-dimensional photonic crystals (PCs) as a designable, compact and practical platform for strong coupling with atomically thin van der Waals Crystals (vdWCs). Polariton dispersions and mode anti-crossings are measured up to room temperature. Non-radiative decay to dark excitons was suppressed due to polariton enhancement of the radiative decay. Unusual features, including highly anisotropic dispersions and adjustable Fano resonances in reflectance, may facilitate high temperature polariton condensation in variable dimensions. Combining slab PCs and vdWCs in the strong coupling regime allows unprecedented engineering flexibility for exploring novel polariton phenomena and device concepts.
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Submitted 27 September, 2017; v1 submitted 26 June, 2017;
originally announced June 2017.
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Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures
Authors:
G. William Burg,
Nitin Prasad,
Babak Fallahazad,
Amithraj Valsaraj,
Kyounghwan Kim,
Takashi Taniguchi,
Kenji Watanabe,
Qingxiao Wang,
Moon J. Kim,
Leonard F. Register,
Emanuel Tutuc
Abstract:
We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe large interlayer current densities of 2 uA/um2 and 2.5 uA/um2, and peak-to-valley ratios approaching 4 and 6 at room temperature and 1.5 K, respectively, values that are comparable to epitaxially grown resonant tunneling…
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We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe large interlayer current densities of 2 uA/um2 and 2.5 uA/um2, and peak-to-valley ratios approaching 4 and 6 at room temperature and 1.5 K, respectively, values that are comparable to epitaxially grown resonant tunneling heterostructures. An excellent agreement between theoretical calculations using a Lorentzian spectral function for the two-dimensional (2D) quasiparticle states, and the experimental data indicates that the interlayer current stems primarily from energy and in-plane momentum conserving 2D-2D tunneling, with minimal contributions from inelastic or non-momentum-conserving tunneling. We demonstrate narrow tunneling resonances with intrinsic half-widths of 4 and 6 meV at 1.5 K and 300 K, respectively.
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Submitted 25 June, 2017;
originally announced June 2017.
