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Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band
Authors:
Maciej Jaworski,
Paweł Mrowiński,
Marek Burakowski,
Paweł Holewa,
Laura Zeidler,
Marcin Syperek,
Elizaveta Semenova,
Grzegorz Sęk
Abstract:
Electron beam lithography is a standard method for fabricating photonic nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indistinguishable photon sources in quantum information processing. However, this technique lacks direct 3D control over the nanostructure shape, complicating the design and enlarging the 2D footprint to suppress in-plane photon…
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Electron beam lithography is a standard method for fabricating photonic nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indistinguishable photon sources in quantum information processing. However, this technique lacks direct 3D control over the nanostructure shape, complicating the design and enlarging the 2D footprint to suppress in-plane photon leakage while directing photons into the collecting lens aperture. Here, we present an alternative approach to employ Xenon plasma-focused ion beam (Xe-PFIB) technology as a reliable method for the 3D sha** of photonic nanostructures containing low-density self-assembled InAs/InP quantum dots emitting in the C-band range of the 3rd telecommunication window. We explore both deterministic and non-deterministic fabrication approaches, resulting in mesas naturally shaped as truncated cones. As a demonstration, we fabricate mesas using a heterogeneously integrated structure with a QDs membrane atop an aluminum mirror and silicon substrate. Finite-difference time-domain (FDTD) simulations show that the angled sidewalls significantly increase photon extraction efficiency, achieving η = 0.89 for NA = 0.65. We demonstrate experimentally a high purity of pulsed single-photon emission (~99%) and a high extraction efficiency of η = 0.24, with the latter surpassing the highest reported values obtained using electron beam lithography in the C-band.
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Submitted 7 June, 2024;
originally announced June 2024.
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Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding
Authors:
Marek Burakowski,
Paweł Holewa,
Aurimas Sakanas,
Anna Musiał,
Grzegorz Sęk,
Paweł Mrowiński,
Kresten Yvind,
Elizaveta Semenova,
Marcin Syperek
Abstract:
Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate th…
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Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate the hybridization of InP and SOI chips, which allows for coupling single photons to the SOI chip interior, offering cost-effective scalability in setting up a multi-source environment for quantum photonic chips. We fabricate devices consisting of self-assembled InAs QDs embedded in the tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusing on devices generating light in the telecom C-band compatible with the low-loss optical fiber networks, we demonstrate the light coupling between InP and SOI platforms by observing photons outcoupled at the InP-made circular Bragg grating outcoupler fabricated at the end of an 80 $μ$m-long Si WG, and at the cleaved edge of the Si WG. Finally, for a device with suppressed multi-photon generation events exhibiting 80% single photon generation purity, we measure the photon number outcoupled at the cleaved facet of the Si WG. We estimate the directional on-chip photon coupling between the source and the Si WG to 5.1%.
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Submitted 23 November, 2023;
originally announced November 2023.
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High-throughput quantum photonic devices emitting indistinguishable photons in the telecom C-band
Authors:
Paweł Holewa,
Daniel A. Vajner,
Emilia Zięba-Ostój,
Maja Wasiluk,
Benedek Gaál,
Aurimas Sakanas,
Marek Burakowski,
Paweł Mrowiński,
Bartosz Krajnik,
Meng Xiong,
Kresten Yvind,
Niels Gregersen,
Anna Musiał,
Alexander Huck,
Tobias Heindel,
Marcin Syperek,
Elizaveta Semenova
Abstract:
Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-photon generation at 1550 nm remained a missing building block to overcome present limitations in quantum communication and information technologies. Here, we demonstrate the high-throughput fabrication of quantum-photonic…
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Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-photon generation at 1550 nm remained a missing building block to overcome present limitations in quantum communication and information technologies. Here, we demonstrate the high-throughput fabrication of quantum-photonic integrated devices operating at C-band wavelengths based on epitaxial semiconductor quantum dots. Our technique enables the deterministic integration of single pre-selected quantum emitters into microcavities based on circular Bragg gratings. Respective devices feature the triggered generation of single photons with ultra-high purity and record-high photon indistinguishability. Further improvements in yield and coherence properties will pave the way for implementing single-photon non-linear devices and advanced quantum networks at telecom wavelengths.
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Submitted 23 May, 2024; v1 submitted 5 April, 2023;
originally announced April 2023.
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Magneto-optical characterization of trions in symmetric InP-based quantum dots for quantum communication applications
Authors:
Wojciech Rudno-Rudziński,
Marek Burakowski,
Johann Peter Reithmaier,
Anna Musiał,
Mohamed Benyoucef
Abstract:
Magneto-optical parameters of trions in novel large and symmetric InP-based quantum dots, uncommon for molecular beam epitaxy grown nanostructures, with emission in the third telecom window, are measured in Voigt and Faraday configurations of external magnetic field. The diamagnetic coefficients are found to be in the range of 1.5-4 μeV/{\T^2}, and 8-15 μeV/{\T^2}, respectively out of plane and in…
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Magneto-optical parameters of trions in novel large and symmetric InP-based quantum dots, uncommon for molecular beam epitaxy grown nanostructures, with emission in the third telecom window, are measured in Voigt and Faraday configurations of external magnetic field. The diamagnetic coefficients are found to be in the range of 1.5-4 μeV/{\T^2}, and 8-15 μeV/{\T^2}, respectively out of plane and in plane of the dots. The determined values of diamagnetic shifts are related to the anisotropy of dot sizes. Trion g-factors are measured to be relatively small, in the range of 0.3-0.7 and 0.5-1.3, in both configurations respectively. Analysis of single carrier g-factors, based on the formalism of spin-correlated orbital currents, leads to the similar values for hole and electron of {\sim} 0.25 for Voigt and {\g_e} {\approx} -5; {\g_h} {\approx} +6 for Faraday configuration of magnetic field. Values of g-factors close to zero measured in Voigt configuration make the investigated dots promising for electrical tuning of g-factor sign, required for schemes of single spin control in qubit applications.
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Submitted 24 January, 2021;
originally announced January 2021.
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Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band
Authors:
Paweł Holewa,
Marek Burakowski,
Anna Musiał,
Nicole Srocka,
David Quandt,
André Strittmatter,
Sven Rodt,
Stephan Reitzenstein,
Grzegorz Sęk
Abstract:
Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the telecom bands and at temperatures not requiring exte…
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Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the telecom bands and at temperatures not requiring extensive cryogenic systems. In this paper we present a temperature-dependent study on single QD emission and single-photon emission from metalorganic vapour-phase epitaxy-grown InGaAs/GaAs QDs emitting in the telecom O-band. Micro-photoluminescence studies reveal that trapped holes in the vicinity of a QD act as reservoir of carriers that can be exploited to enhance photoluminescence from trion states observed at elevated temperatures up to at least 80 K. The luminescence quenching is mainly related to the promotion of holes to higher states in the valence band and this aspect must be primarily addressed in order to further increase the thermal stability of emission. Photon autocorrelation measurements yield single photon emission with a purity of $g_{50\mathrm{K}}^{(2)}\left(0\right)=0.13$ up to 50 K. Our results imply that these nanostructures are very promising candidates for single-photon sources at elevated temperatures in the telecom O-band and highlight means for improvements in their performance.
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Submitted 19 November, 2020; v1 submitted 20 October, 2020;
originally announced October 2020.
