-
Imaging Local Effects of Voltage and Boron Do** on Spin Reversal in Antiferromagnetic Magnetoelectric Cr2O3 Thin Films and Devices
Authors:
Adam Erickson,
Syed Qamar Abbas Shah,
Ather Mahmood,
Pratyush Buragohain,
Ilja Fescenko,
Alexei Gruverman,
Christian Binek,
Abdelghani Laraoui
Abstract:
Chromia (Cr2O3) is a magnetoelectric oxide which permits voltage-control of the antiferromagnetic (AFM) order, but it suffers technological constraints due to its low Neel Temperature (TN ~307 K) and the need of a symmetry breaking applied magnetic field to achieve reversal of the Neel vector. Recently, boron (B) do** of Cr2O3 films led to an increase TN > 400 K and allowed the realization of vo…
▽ More
Chromia (Cr2O3) is a magnetoelectric oxide which permits voltage-control of the antiferromagnetic (AFM) order, but it suffers technological constraints due to its low Neel Temperature (TN ~307 K) and the need of a symmetry breaking applied magnetic field to achieve reversal of the Neel vector. Recently, boron (B) do** of Cr2O3 films led to an increase TN > 400 K and allowed the realization of voltage magnetic-field free controlled Néel vector rotation. Here, we directly image the impact of B do** on the formation of AFM domains in Cr2O3 thin films and elucidate the mechanism of voltage-controlled manipulation of the spin structure using nitrogen vacancy (NV) scanning probe magnetometry. We find a stark reduction and thickness dependence of domain size in B-doped Cr2O3 (B:Cr2O3) films, explained by the increased germ density, likely associated with the B do**. By reconstructing the surface magnetization from the NV stray-field maps, we find a qualitative distinction between the undoped and B-doped Cr2O3 films, manifested by the histogram distribution of the AFM ordering, i.e., 180 degree domains for pure films, and 90 degree domains for B:Cr2O3 films. Additionally, NV imaging of voltage-controlled B-doped Cr2O3 devices corroborate the 90 degeree rotation of the AFM domains observed in magnetotransport measurement.
△ Less
Submitted 17 May, 2024;
originally announced May 2024.
-
Duality of switching mechanisms and transient negative capacitance in improper ferroelectrics
Authors:
Xin Li,
Yu Yun,
Pratyush Buragohain,
Arashdeep Singh Thind,
Donald A. Walko,
Detian Yang,
Rohan Mishra,
Alexei Gruverman,
Xiaoshan Xu
Abstract:
The recent discovery of transient negative capacitance has sparked an intense debate on the role of homogeneous and inhomogeneous mechanisms in polarizations switching. In this work, we report observation of transient negative capacitance in improper ferroelectric h-YbFeO3 films in a resistor-capacitor circuit, and a concaved shape of anomaly in the voltage wave form, in the early and late stage o…
▽ More
The recent discovery of transient negative capacitance has sparked an intense debate on the role of homogeneous and inhomogeneous mechanisms in polarizations switching. In this work, we report observation of transient negative capacitance in improper ferroelectric h-YbFeO3 films in a resistor-capacitor circuit, and a concaved shape of anomaly in the voltage wave form, in the early and late stage of the polarizations switching respectively. Using a phenomenological model, we show that the early-stage negative capacitance is likely due to the inhomogeneous switching involving nucleation and domain wall motion, while the anomaly at the late stage, which appears to be a reminiscent negative capacitance is the manifestation of the thermodynamically unstable part of the free-energy landscape in the homogeneous switching. The complex free-energy landscape in hexagonal ferrites may be the key to cause the abrupt change in polarization switching speed and the corresponding anomaly. These results reconcile the two seemingly conflicting mechanisms in the polarization switching and highlight their different roles at different stages. The unique energy-landscape in hexagonal ferrites that reveals the dual switching mechanism suggests the promising application potential in terms of negative capacitance.
△ Less
Submitted 25 September, 2023;
originally announced September 2023.
-
Intrinsic ferroelectricity in Y-doped HfO2 thin films
Authors:
Yu Yun,
Pratyush Buragohain,
Ming Li,
Zahra Ahmadi,
Yizhi Zhang,
Xin Li,
Haohan Wang,
Lingling Tao,
Haiyan Wang,
Jeffrey E. Shield,
Evgeny Y. Tsymbal,
Alexei Gruverman,
Xiaoshan Xu
Abstract:
Ferroelectric HfO2-based materials hold great potential for widespread integration of ferroelectricity into modern electronics due to their robust ferroelectric properties at the nanoscale and compatibility with the existing Si technology. Earlier work indicated that the nanometer crystal grain size was crucial for stabilization of the ferroelectric phase of hafnia. This constraint caused high den…
▽ More
Ferroelectric HfO2-based materials hold great potential for widespread integration of ferroelectricity into modern electronics due to their robust ferroelectric properties at the nanoscale and compatibility with the existing Si technology. Earlier work indicated that the nanometer crystal grain size was crucial for stabilization of the ferroelectric phase of hafnia. This constraint caused high density of unavoidable structural defects of the HfO2-based ferroelectrics, obscuring the intrinsic ferroelectricity inherited from the crystal space group of bulk HfO2. Here, we demonstrate the intrinsic ferroelectricity in Y-doped HfO2 films of high crystallinity. Contrary to the common expectation, we show that in the 5% Y-doped HfO2 epitaxial thin films, high crystallinity enhances the spontaneous polarization up to a record-high 50 μC/cm2 value at room temperature. The high spontaneous polarization persists at reduced temperature, with polarization values consistent with our theoretical predictions, indicating the dominant contribution from the intrinsic ferroelectricity. The crystal structure of these films reveals the Pca21 orthorhombic phase with a small rhombohedral distortion, underlining the role of the anisotropic stress and strain. These results open a pathway to controlling the intrinsic ferroelectricity in the HfO2-based materials and optimizing their performance in applications.
△ Less
Submitted 10 September, 2021;
originally announced September 2021.
-
Piezoelectricity in hafnia
Authors:
Sangita Dutta,
Pratyush Buragohain,
Sebastjan Glinsek,
Claudia Richter,
Hugo Aramberri,
Haidong Lu,
Uwe Schroeder,
Emmanuel Defay,
Alexei Gruverman,
Jorge Íñiguez
Abstract:
Because of its compatibility with semiconductor-based technologies, hafnia (HfO$_{2}$) is today's most promising ferroelectric material for applications in electronics. Yet, knowledge on the ferroic and electromechanical response properties of this all-important compound is still lacking. Interestingly, HfO$_2$ has recently been predicted to display a negative longitudinal piezoelectric effect, wh…
▽ More
Because of its compatibility with semiconductor-based technologies, hafnia (HfO$_{2}$) is today's most promising ferroelectric material for applications in electronics. Yet, knowledge on the ferroic and electromechanical response properties of this all-important compound is still lacking. Interestingly, HfO$_2$ has recently been predicted to display a negative longitudinal piezoelectric effect, which sets it apart form classic ferroelectrics (e.g., perovskite oxides like PbTiO$_3$) and is reminiscent of the behavior of some organic compounds. The present work corroborates this behavior, by first-principles calculations and an experimental investigation of HfO$_2$ thin films using piezoresponse force microscopy. Further,the simulations show how the chemical coordination of the active oxygen atoms is responsible for the negative longitudinal piezoelectric effect. Building on these insights, it is predicted that, by controlling the environment of such active oxygens (e.g., by means of an epitaxial strain), it is possible to change the sign of the piezoelectric response of the material.
△ Less
Submitted 15 July, 2021;
originally announced July 2021.
-
Persistent Ionic Photo-responses and Frank-Condon Mechanism in Proton-transfer Ferroelectrics
Authors:
Xuanyuan Jiang,
Xiao Wang,
Pratyush Buragohain,
Andy Clark,
Haidong Lu,
Shashi Poddar,
Le Yu,
Anthony D DiChiara,
Alexei Gruverman,
Xuemei Cheng,
Xiaoshan Xu
Abstract:
Photoexcitation is well-known to trigger electronic metastable states and lead to phenomena like long-lived photoluminescence and photoconductivity. In contrast, persistent photo-response due to ionic metastable states is rare. In this work, we report persistent structural and ferroelectric photo-responses due to proton metastable states via a nuclear quantum mechanism in ferroelectric croconic ac…
▽ More
Photoexcitation is well-known to trigger electronic metastable states and lead to phenomena like long-lived photoluminescence and photoconductivity. In contrast, persistent photo-response due to ionic metastable states is rare. In this work, we report persistent structural and ferroelectric photo-responses due to proton metastable states via a nuclear quantum mechanism in ferroelectric croconic acid, in which the proton-transfer origin of ferroelectricity is important for the ionic metastable states. We show that, after photoexcitation, the changes of structural and ferroelectric properties relax in about 1000 s, while the photoconductivity decays within 1 s, indicating the dominant ionic origin of the responses. The photogenerated internal bias field that survives polarization switching process suggests another proton transfer route and metastable state, in addition to the metastable states resulting from proton transfer along the hydrogen bonds proposed previously. Analysis based on Frank Condon principle reveals the quantum mechanical nature of the proton-transfer process both within the hydrogen bonds and out of the hydrogen bonds, where small mass of proton and significant change of potential landscape due to the excited electronic states are the key. The demonstration of persistent photo-responses due to the proton metastable states unveils a nuclear quantum mechanism for photo-tunability of materials, which is expected to impact many material properties sensitive to ionic positions.
△ Less
Submitted 6 May, 2021;
originally announced May 2021.
