Showing 1–2 of 2 results for author: Bulanov, A D
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99.992 % $^{28}$Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits
Authors:
V. Mazzocchi,
P. G. Sennikov,
A. D. Bulanov,
M. F. Churbanov,
B. Bertrand,
L. Hutin,
J. P. Barnes,
M. N. Drozdov,
J. M. Hartmann,
M. Sanquer
Abstract:
Silicon-based quantum bits with electron spins in quantum dots or nuclear spins on dopants are serious contenders in the race for quantum computation. Added to process integration maturity, the lack of nuclear spins in the most abundant $^{28}$silicon isotope host crystal for qubits is a major asset for this silicon quantum technology. We have grown $^{28}$silicon epitaxial layers (epilayers) with…
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Silicon-based quantum bits with electron spins in quantum dots or nuclear spins on dopants are serious contenders in the race for quantum computation. Added to process integration maturity, the lack of nuclear spins in the most abundant $^{28}$silicon isotope host crystal for qubits is a major asset for this silicon quantum technology. We have grown $^{28}$silicon epitaxial layers (epilayers) with an isotopic purity greater than 99.992 % on 300mm natural abundance silicon crystals. The quality of the mono-crystalline isotopically purified epilayer conforms to the same drastic quality requirements as the natural epilayers used in our pre-industrial CMOS facility. The isotopically purified substrates are now ready for the fabrication of silicon qubits using a state-of-the-art 300 mm Si CMOS-foundries equipment and processes
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Submitted 13 July, 2018;
originally announced July 2018.
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Determination of Low Loss in Isotopically Pure Single Crystal $^{28}$Si at Low Temperatures and Single Microwave Photon Energy
Authors:
Nikita Kostylev,
Maxim Goryachev,
Andrey D. Bulanov,
Vladimir A. Gavva,
Michael E. Tobar
Abstract:
The low dielectric losses of an isotropically pure single crystal $^{28}$Si sample were determined at a temperature of 20 mK and at powers equivalent to that of a single photon. Whispering Gallery Mode (WGM) analysis revealed large Quality Factors of order $2\times10^6$ (dielectric loss $\sim 5\times10^{-7}$) at high powers, degrading to $7\times10^5$ (dielectric loss $\sim 1.4\times10^{-6}$) at s…
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The low dielectric losses of an isotropically pure single crystal $^{28}$Si sample were determined at a temperature of 20 mK and at powers equivalent to that of a single photon. Whispering Gallery Mode (WGM) analysis revealed large Quality Factors of order $2\times10^6$ (dielectric loss $\sim 5\times10^{-7}$) at high powers, degrading to $7\times10^5$ (dielectric loss $\sim 1.4\times10^{-6}$) at single photon energy. A very low-loss narrow line width paramagnetic spin flip transition was detected with extreme sensitivity in $^{28}$Si, with very small concentration below $10^{11}$~cm$^{-3}$ (less than 10 parts per trillion) and g-factor of $1.995\pm0.008$. Such determination was only possible due to the low dielectric photonic losses combined with the long lifetime of the spin transition (low magnetic loss), which enhances the magnetic AC susceptibility. Such low photonic loss at single photon energy combined with the narrow line width of the spin ensemble, indicate that single crystal $^{28}$Si could be an important crystal for future cavity QED experiments.
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Submitted 10 September, 2016; v1 submitted 16 June, 2016;
originally announced June 2016.
