Laser structuring for control of coupling between THz light and phonon modes
Authors:
X. W. Wang,
G. Seniutinas,
A. Balcytis,
I. Kasalynas,
V. Jakstas,
V. Janonis,
R. Venckevicius,
R. Buividas,
D. Appadoo,
G. Valusis,
S. Juodkazis
Abstract:
Modification of surface and volume of sapphire is shown to affect reflected and transmitted light at THz spectral range. Structural modifications were made using ultra-short 230 fs laser pulses at 1030 nm and 257.5 nm wavelengths forming surface ripples of ~250 nm and 60 nm period, respectively. Softening of the transverse optical phonon TO1 mode due to disorder was the most pronounced in reflecti…
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Modification of surface and volume of sapphire is shown to affect reflected and transmitted light at THz spectral range. Structural modifications were made using ultra-short 230 fs laser pulses at 1030 nm and 257.5 nm wavelengths forming surface ripples of ~250 nm and 60 nm period, respectively. Softening of the transverse optical phonon TO1 mode due to disorder was the most pronounced in reflection from laser ablated surface. It is shown that sub-surface periodic patterns of laser damage sites have also modified reflection spectrum due to coupling of THz radiation with phonons. Application potential of laser structuring and disordering for phononic engineering is discussed.
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Submitted 14 May, 2016;
originally announced May 2016.
Photoluminescence from voids created by femtosecond laser pulses inside cubic-BN
Authors:
R. Buividas,
I. Aharonovich,
G. Seniutinas,
X. W. Wang,
L. Rapp,
A. V. Rode,
T. Taniguchi,
S. Juodkazis
Abstract:
Photoluminescence (PL) from femtosecond laser modified regions inside cubic-boron nitride (c-BN) was measured under UV and visible light excitation. Bright PL at the red spectral range was observed, with a typical excited state lifetime of $\sim 4$~ns. Sharp emission lines are consistent with PL of intrinsic vibronic defects linked to the nitrogen vacancy formation (via Frenkel pair) observed earl…
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Photoluminescence (PL) from femtosecond laser modified regions inside cubic-boron nitride (c-BN) was measured under UV and visible light excitation. Bright PL at the red spectral range was observed, with a typical excited state lifetime of $\sim 4$~ns. Sharp emission lines are consistent with PL of intrinsic vibronic defects linked to the nitrogen vacancy formation (via Frenkel pair) observed earlier in high energy electron irradiated and ion-implanted c-BN. These, formerly known as the radiation centers, RC1, RC2, and RC3 have been identified at the locus of the voids formed by single fs-laser pulse. The method is promising to engineer color centers in c-BN for photonic applications.
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Submitted 7 October, 2015;
originally announced October 2015.
