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Vibrational modes as the origin of dielectric loss at 0.27$\unicode{x2013}$100 THz in a-SiC:H
Authors:
B. T. Buijtendorp,
A. Endo,
W. Jellema,
K. Karatsu,
K. Kouwenhoven,
D. Lamers,
A. J. van der Linden,
K. Rostem,
M. Veen,
E. J. Wollack,
J. J. A. Baselmans,
S. Vollebregt
Abstract:
Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band ($\mathrm{\sim}$1$\unicode{x2013}$10 GHz) the cryogenic and low-power dielectric loss is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band ($\mathrm{\sim}$0.1$\unicode{x2013}$1 THz) is not understood. We mea…
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Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band ($\mathrm{\sim}$1$\unicode{x2013}$10 GHz) the cryogenic and low-power dielectric loss is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band ($\mathrm{\sim}$0.1$\unicode{x2013}$1 THz) is not understood. We measured the loss of hydrogenated amorphous SiC (a-SiC:H) films in the 0.27$\unicode{x2013}$100 THz range using superconducting microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in the a-SiC:H above 200 GHz.
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Submitted 24 May, 2024; v1 submitted 22 May, 2024;
originally announced May 2024.
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Geometry dependence of TLS noise and loss in a-SiC:H parallel plate capacitors for superconducting microwave resonators
Authors:
K. Kouwenhoven,
G. P. J. van Doorn,
B. T. Buijtendorp,
S. A. H. de Rooij,
D. Lamers,
D. J. Thoen,
V. Murugesan,
J. J. A. Baselmans,
P. J. de Visser
Abstract:
Parallel plate capacitors (PPC) significantly reduce the size of superconducting microwave resonators, reducing the pixel pitch for arrays of single photon energy-resolving kinetic inductance detectors (KIDs). The frequency noise of KIDs is typically limited by tunneling Two-Level Systems (TLS), which originate from lattice defects in the dielectric materials required for PPCs. How the frequency n…
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Parallel plate capacitors (PPC) significantly reduce the size of superconducting microwave resonators, reducing the pixel pitch for arrays of single photon energy-resolving kinetic inductance detectors (KIDs). The frequency noise of KIDs is typically limited by tunneling Two-Level Systems (TLS), which originate from lattice defects in the dielectric materials required for PPCs. How the frequency noise level depends on the PPC's dimensions has not been experimentally addressed. We measure the frequency noise of 56 resonators with a-SiC:H PPCs, which cover a factor 44 in PPC area and a factor 4 in dielectric thickness. To support the noise analysis, we measure the TLS-induced, power-dependent, intrinsic loss and temperature-dependent resonance frequency shift of the resonators. From the TLS models, we expect a geometry-independent microwave loss and resonance frequency shift, set by the TLS properties of the dielectric. However, we observe a thickness-dependent microwave loss and resonance frequency shift, explained by surface layers that limit the performance of PPC-based resonators. For a uniform dielectric, the frequency noise level should scale directly inversely with the PPC area and thickness. We observe that an increase in PPC size reduces the frequency noise, but the exact scaling is, in some cases, weaker than expected. Finally, we derive an engineering guideline for the design of KIDs based on PPC-based resonators.
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Submitted 8 May, 2024; v1 submitted 21 November, 2023;
originally announced November 2023.
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DESHIMA 2.0: development of an integrated superconducting spectrometer for science-grade astronomical observations
Authors:
Akio Taniguchi,
Tom J. L. C. Bakx,
Jochem J. A. Baselmans,
Robert Huiting,
Kenichi Karatsu,
Nuria Llombart,
Matus Rybak,
Tatsuya Takekoshi,
Yoichi Tamura,
Hiroki Akamatsu,
Stefanie Brackenhoff,
Juan Bueno,
Bruno T. Buijtendorp,
Shahab Dabironezare,
Anne-Kee Doing,
Yasunori Fujii,
Kazuyuki Fujita,
Matthijs Gouwerok,
Sebastian Hähnle,
Tsuyoshi Ishida,
Shun Ishii,
Ryohei Kawabe,
Tetsu Kitayama,
Kotaro Kohno,
Akira Kouchi
, et al. (10 additional authors not shown)
Abstract:
Integrated superconducting spectrometer (ISS) technology will enable ultra-wideband, integral-field spectroscopy for (sub)millimeter-wave astronomy, in particular, for uncovering the dust-obscured cosmic star formation and galaxy evolution over cosmic time. Here we present the development of DESHIMA 2.0, an ISS for ultra-wideband spectroscopy toward high-redshift galaxies. DESHIMA 2.0 is designed…
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Integrated superconducting spectrometer (ISS) technology will enable ultra-wideband, integral-field spectroscopy for (sub)millimeter-wave astronomy, in particular, for uncovering the dust-obscured cosmic star formation and galaxy evolution over cosmic time. Here we present the development of DESHIMA 2.0, an ISS for ultra-wideband spectroscopy toward high-redshift galaxies. DESHIMA 2.0 is designed to observe the 220-440 GHz band in a single shot, corresponding to a redshift range of $z$=3.3-7.6 for the ionized carbon emission ([C II] 158 $μ$m). The first-light experiment of DESHIMA 1.0, using the 332-377 GHz band, has shown an excellent agreement among the on-sky measurements, the lab measurements, and the design. As a successor to DESHIMA 1.0, we plan the commissioning and the scientific observation campaign of DESHIMA 2.0 on the ASTE 10-m telescope in 2023. Ongoing upgrades for the full octave-bandwidth system include the wideband 347-channel chip design and the wideband quasi-optical system. For efficient measurements, we also develop the observation strategy using the mechanical fast sky-position chopper and the sky-noise removal technique based on a novel data-scientific approach. In the paper, we show the recent status of the upgrades and the plans for the scientific observation campaign.
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Submitted 4 October, 2022; v1 submitted 27 October, 2021;
originally announced October 2021.
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Hydrogenated Amorphous Silicon Carbide: A Low-loss Deposited Dielectric for Microwave to Submillimeter Wave Superconducting Circuits
Authors:
B. T. Buijtendorp,
S. Vollebregt,
K. Karatsu,
D. J. Thoen,
V. Murugesan,
K. Kouwenhoven,
S. Hähnle,
J. J. A. Baselmans,
A. Endo
Abstract:
Low-loss deposited dielectrics will benefit superconducting devices such as integrated superconducting spectrometers, superconducting qubits and kinetic inductance parametric amplifiers. Compared with planar structures, multi-layer structures such as microstrips are more compact and eliminate radiation loss at high frequencies. Multi-layer structures are most easily fabricated with deposited diele…
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Low-loss deposited dielectrics will benefit superconducting devices such as integrated superconducting spectrometers, superconducting qubits and kinetic inductance parametric amplifiers. Compared with planar structures, multi-layer structures such as microstrips are more compact and eliminate radiation loss at high frequencies. Multi-layer structures are most easily fabricated with deposited dielectrics, which typically exhibit higher dielectric loss than crystalline dielectrics. We measured the sub-kelvin and low-power microwave and mm-submm wave dielectric loss of hydrogenated amorphous silicon carbide (a-SiC:H), using a superconducting chip with NbTiN/a-SiC:H/NbTiN microstrip resonators. We deposited the a-SiC:H by plasma-enhanced chemical vapor deposition at a substrate temperature of 400°C. The a-SiC:H has a mm-submm loss tangent ranging from $0.80 \pm 0.01 \times 10^{-4}$ to $1.43 \pm 0.04 \times 10^{-4}$ in the range of 270 to 385 GHz. The microwave loss tangent is $3.2 \pm 0.2 \times 10^{-5}$. These are the lowest low-power sub-kelvin loss tangents that have been reported for microstrip resonators at mm-submm and microwave frequencies. We observe that the loss tangent increases with frequency. The a-SiC:H films are free of blisters and have low stress: $-$20 MPa compressive at 200 nm thickness to 60 MPa tensile at 1000 nm thickness.
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Submitted 7 October, 2021;
originally announced October 2021.
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Terahertz Band-Pass Filters for Wideband Superconducting On-chip Filter-bank Spectrometers
Authors:
Alejandro Pascual Laguna,
Kenichi Karatsu,
David J. Thoen,
Vignesh Murugesan,
Bruno T. Buijtendorp,
Akira Endo,
Jochem J. A. Baselmans
Abstract:
A superconducting microstrip half-wavelength resonator is proposed as a suitable band-pass filter for broadband moderate spectral resolution spectroscopy for terahertz (THz) astronomy. The proposed filter geometry has a free spectral range of an octave of bandwidth without introducing spurious resonances, reaches a high coupling efficiency in the pass-band and shows very high rejection in the stop…
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A superconducting microstrip half-wavelength resonator is proposed as a suitable band-pass filter for broadband moderate spectral resolution spectroscopy for terahertz (THz) astronomy. The proposed filter geometry has a free spectral range of an octave of bandwidth without introducing spurious resonances, reaches a high coupling efficiency in the pass-band and shows very high rejection in the stop-band to minimize reflections and cross-talk with other filters. A spectrally sparse prototype filter-bank in the band 300-400 GHz has been developed employing these filters as well as an equivalent circuit model to anticipate systematic errors. The fabricated chip has been characterized in terms of frequency response, reporting an average peak coupling efficiency of 27% with an average spectral resolution of 940.
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Submitted 22 September, 2021;
originally announced September 2021.
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Characterization of low-loss hydrogenated amorphous silicon films for superconducting resonators
Authors:
Bruno T. Buijtendorp,
Juan Bueno,
David J. Thoen,
Vignesh Murugesan,
Paolo M. Sberna,
Jochem J. A. Baselmans,
Sten Vollebregt,
Akira Endo
Abstract:
Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100°C, 250°C and 350°C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-angle disor…
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Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100°C, 250°C and 350°C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-angle disorder are negatively correlated with the substrate temperature. All three films have a loss tangent below $10^{-5}$ for a resonator energy of $10^5$ photons, at 120 mK and 4-7 GHz. This makes these films promising for microwave kinetic inductance detectors and on-chip millimeter-submilimeter filters.
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Submitted 14 December, 2020;
originally announced December 2020.
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Automated tuning of inter-dot tunnel couplings in quantum dot arrays
Authors:
C. J. van Diepen,
P. T. Eendebak,
B. T. Buijtendorp,
U. Mukhopadhyay,
T. Fujita,
C. Reichl,
W. Wegscheider,
L. M. K. Vandersypen
Abstract:
Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task, because of ini…
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Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task, because of initial electrostatic disorder and capacitive cross-talk effects. Here, we report on the automated tuning of the inter-dot tunnel coupling in a linear array of gate-defined semiconductor quantum dots. The automation of the tuning of the inter-dot tunnel coupling is the next step forward in scalable and efficient control of larger quantum dot arrays. This work greatly reduces the effort of tuning semiconductor quantum dots for quantum information processing and quantum simulation.
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Submitted 27 March, 2018;
originally announced March 2018.
