Single-Gate Accumulation-Mode InGaAs Quantum Dot with a Vertically Integrated Charge Sensor
Authors:
E. T. Croke,
M. G. Borselli,
M. F. Gyure,
S. S. Bui,
I. I. Milosavljevic,
R. S. Ross,
A. E. Schmitz,
A. T. Hunter
Abstract:
We report on the fabrication and characterization of a few-electron quantum dot controlled by a single gate electrode. Our device has a double-quantum-well design, in which the do** controls the occupancy of the lower well while the upper well remains empty under the free surface. A small air-bridged gate contacts the surface, and is positively biased to draw laterally confined electrons into…
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We report on the fabrication and characterization of a few-electron quantum dot controlled by a single gate electrode. Our device has a double-quantum-well design, in which the do** controls the occupancy of the lower well while the upper well remains empty under the free surface. A small air-bridged gate contacts the surface, and is positively biased to draw laterally confined electrons into the upper well. Electrons tunneling between this accumulation-mode dot and the lower well are detected using a quantum point contact (QPC), located slightly offset from the dot gate. The charge state of the dot is measured by monitoring the differential transconductance of the QPC near pinch-off. Addition spectra starting with N=0 were observed as a function of gate voltage. DC sensitivity to single electrons was determined to be as high as 8.6%, resulting in a signal-to-noise ratio of ~9:1 with an equivalent noise bandwidth of 12.1 kHz. Analysis of random telegraph signals associated with the zero to one electron transition allowed a measurement of the lifetimes for the filled and empty states of the one-electron dot: 0.38 ms and 0.22 ms, respectively, for a device with a 10 nm AlInAs tunnel barrier between the two wells.
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Submitted 19 October, 2009;
originally announced October 2009.
Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots
Authors:
Robert R. Hayes,
Andrey A. Kiselev,
Matthew G. Borselli,
Steven S. Bui,
Edward T. Croke III,
Peter W. Deelman,
Brett M. Maune,
Ivan Milosavljevic,
Jeong-Sun Moon,
Richard S. Ross,
Adele E. Schmitz,
Mark F. Gyure,
Andrew T. Hunter
Abstract:
We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Using a new step-and-reach technique, we have experimentally verified the g-value of 2.0 +/- 0.1 for the observed Zeeman doublet. We have also measured T1 of single- and multi-electron spins in InGaAs quantum dots. The l…
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We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Using a new step-and-reach technique, we have experimentally verified the g-value of 2.0 +/- 0.1 for the observed Zeeman doublet. We have also measured T1 of single- and multi-electron spins in InGaAs quantum dots. The lifetimes of the Si/SiGe system are appreciably longer than those for InGaAs dots for comparable magnetic field strengths, but both approach one second at sufficiently low fields (< 1 T for Si, and < 0.2 T for InGaAs).
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Submitted 2 August, 2009;
originally announced August 2009.
