Showing 1–50 of 96 results for author: Buhrman, R A

Tuning nanosecond switching of spin-orbit torque driven magnetic tunnel junctions

Authors: Shengjie Shi, R. A. Buhrman

Abstract: Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to develo** new schemes for high speed, low energy magnetic recording technologies. While fast switching has been demonstrated in three terminal magnetic tunnel junctions (3T-MTJs) through applying… ▽ More Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to develo** new schemes for high speed, low energy magnetic recording technologies. While fast switching has been demonstrated in three terminal magnetic tunnel junctions (3T-MTJs) through applying short voltage pulses in the heavy metal channel, detailed understanding of the switching mechanism is lacking due to the complexity of the multi-layered magnetic structure and the three-terminal geometry. We show in this letter that current-induced effective fields play a key role in the fast switching and by tuning the applied external field we can finely tune the symmetry of the pulse switching between two switching polarities, namely parallel to anti-parallel (P-AP) and anti-parallel to parallel (AP-P). These results show that the manipulation of detailed magnetic configuration is the key to fast switching and is a useful way for future optimization of SOT memory and further applications. △ Less

Submitted 14 April, 2022; originally announced April 2022.

Origins of transverse voltages generated by applied thermal gradients and applied electric fields in ferrimagnetic-insulator/heavy-metal bilayers

Authors: Arnab Bose, Rakshit Jain, Jackson J. Bauer, Robert A. Buhrman, Caroline A. Ross, Daniel C. Ralph

Abstract: We compare thermal-gradient-driven transverse voltages in ferrimagnetic-insulator/heavy-metal bilayers (Tm3Fe5O12/W and Tm3Fe5O12/Pt) to corresponding electrically-driven transverse resistances at and above room temperature. We find for Tm3Fe5O12/W that the thermal and electrical effects can be explained by a common spin-current detection mechanism, the physics underlying spin Hall magnetoresistan… ▽ More We compare thermal-gradient-driven transverse voltages in ferrimagnetic-insulator/heavy-metal bilayers (Tm3Fe5O12/W and Tm3Fe5O12/Pt) to corresponding electrically-driven transverse resistances at and above room temperature. We find for Tm3Fe5O12/W that the thermal and electrical effects can be explained by a common spin-current detection mechanism, the physics underlying spin Hall magnetoresistance (SMR). However, for Tm3Fe5O12/Pt the ratio of the electrically-driven transverse voltages (planar Hall signal/anomalous Hall signal) is much larger than the ratio of corresponding thermal-gradient signals, a result which is very different from expectations for a SMR-based mechanism alone. We ascribe this difference to a proximity-induced magnetic layer at the Tm3Fe5O12/Pt interface. △ Less

Submitted 22 February, 2022; v1 submitted 13 December, 2021; originally announced December 2021.

Maximizing Spin-Orbit Torque Generated by the Spin Hall Effect of Pt

Authors: Lijun Zhu, Daniel C. Ralph, Robert A Buhrman

Abstract: Efficient generation of spin-orbit torques (SOTs) is central for the exciting field of spin-orbitronics. Platinum, the archetypal spin Hall material, has the potential to be an outstanding provider for spin-orbit torques due to its giant spin Hall conductivity, low resistivity, high stabilities, and the ability to be compatible with CMOS circuits. However, pure clean-limit Pt with low resistivity… ▽ More Efficient generation of spin-orbit torques (SOTs) is central for the exciting field of spin-orbitronics. Platinum, the archetypal spin Hall material, has the potential to be an outstanding provider for spin-orbit torques due to its giant spin Hall conductivity, low resistivity, high stabilities, and the ability to be compatible with CMOS circuits. However, pure clean-limit Pt with low resistivity still provides a low dam**-like spin-orbit torque efficiency, which limits its practical applications. The efficiency of spin-orbit torque in Pt-based magnetic heterostructures can be improved considerably by increasing the spin Hall ratio of Pt and spin transmissivity of the interfaces. Here we reviews recent advances in understanding the physics of spin current generation, interfacial spin transport, and the metrology of spin-orbit torques, and summarize progress towards the goal of Pt-based spin-orbit torque memories and logic that are fast, efficient, reliable, scalable, and non-volatile. △ Less

Submitted 10 July, 2021; v1 submitted 9 June, 2021; originally announced June 2021.

Comments: Comments are welcome

Report number: Applied Physics Reviews 8, 031308 (2021)

Unveiling the mechanism of bulk spin-orbit torques within chemically disordered Fe$_x$Pt$_{1-x}$ single layers

Authors: Lijun Zhu, Daniel C. Ralph, Robert A. Buhrman

Abstract: Recent discovery of spin-orbit torques (SOTs) within magnetic single-layers has attracted attention in the field of spintronics. However, it has remained elusive as to how to understand and how to tune the SOTs. Here, utilizing the single layers of chemically disordered Fe$_x$Pt$_{1-x}$, we unveil the mechanism of the "unexpected" bulk SOTs by studying their dependence on the introduction of a con… ▽ More Recent discovery of spin-orbit torques (SOTs) within magnetic single-layers has attracted attention in the field of spintronics. However, it has remained elusive as to how to understand and how to tune the SOTs. Here, utilizing the single layers of chemically disordered Fe$_x$Pt$_{1-x}$, we unveil the mechanism of the "unexpected" bulk SOTs by studying their dependence on the introduction of a controlled vertical composition gradient and on temperature. We find that the bulk dam** like SOT arises from an imbalanced internal spin current that is transversely polarized and independent of the magnetization orientation. The torque can be strong only in the presence of a vertical composition gradient and the SOT efficiency per electric field is insensitive to temperature but changes sign upon reversal of the orientation of the composition gradient, which are in analogue to behaviors of the strain. From these characteristics we conclude that the imbalanced internal spin current originates from a bulk spin Hall effect and that the associated inversion asymmetry that allows for a non-zero net torque is most likely a strain non-uniformity induced by the composition gradient. The fieldlike SOT is a relatively small bulk effect compared to the dam**like SOT. This work points to the possibility of develo** low-power single-layer SOT devices by strain engineering. △ Less

Submitted 4 June, 2021; originally announced June 2021.

Comments: Advanced Functional Materials (in production)

Journal ref: Advanced Functional Materials, 2103898 (2021)

Interfacial and bulk spin Hall contributions to field-like spin-orbit torque generated by Iridium

Authors: Sutapa Dutta, Arnab Bose, A. A. Tulapurkar, R. A. Buhrman, D. C. Ralph

Abstract: We present measurements of spin orbit torques generated by Ir as a function of film thickness in sputtered Ir/CoFeB and Ir/Co samples. We find that Ir provides a dam**-like component of spin orbit torque with a maximum spin torque conductivity 1.4e5 in SI unit and a maximum spin-torque efficiency of 0.04, which is sufficient to drive switching in an 0.8 nm film of CoFeB with perpendicular magnet… ▽ More We present measurements of spin orbit torques generated by Ir as a function of film thickness in sputtered Ir/CoFeB and Ir/Co samples. We find that Ir provides a dam**-like component of spin orbit torque with a maximum spin torque conductivity 1.4e5 in SI unit and a maximum spin-torque efficiency of 0.04, which is sufficient to drive switching in an 0.8 nm film of CoFeB with perpendicular magnetic anisotropy. We also observe a surprisingly large field like spin orbit torque. Measurements as a function of Ir thickness indicate a substantial contribution to the FLT from an interface mechanism so that in the ultrathin limit there is a non-zero FLT with a maximum torque conductivity -5.0E4 in the SI unit. When the Ir film thickness becomes comparable to or greater than its spin diffusion length, 1.6 nm, there is also a smaller bulk contribution to the fieldlike torque. △ Less

Submitted 6 May, 2021; originally announced May 2021.

Lack of simple correlation between switching current density and spin-orbit torque efficiency of perpendicularly magnetized spin-current generator/ferromagnet heterostructures

Authors: Lijun Zhu, D. C. Ralph, R. A. Buhrman

Abstract: Spin-orbit torque can drive electrical switching of magnetic layers. Here, we report that at least for micrometer-sized samples there is no simple correlation between the efficiency of dam**like spin-orbit torque (ξ_DL^j) and the critical switching current density of perpendicularly magnetized spin-current generator/ferromagnet heterostructures. We find that the values of ξ_DL^j based on switchi… ▽ More Spin-orbit torque can drive electrical switching of magnetic layers. Here, we report that at least for micrometer-sized samples there is no simple correlation between the efficiency of dam**like spin-orbit torque (ξ_DL^j) and the critical switching current density of perpendicularly magnetized spin-current generator/ferromagnet heterostructures. We find that the values of ξ_DL^j based on switching current densities can either under- or over-estimated ξ_DL^j by up to tens of times in a domain-wall depinning analysis, while in the macrospin analysis based on the switching current density ξ_DL^j can be overestimated by up to thousands of times. When comparing the relative strengths of ξ_DL^j of spin-current generators, the critical switching current densities by themselves are a poor predictor. △ Less

Submitted 25 January, 2021; originally announced January 2021.

Comments: Submitted to Phys. Rev. Appl

Journal ref: Phys. Rev. Applied 15, 024059 (2021)

Absence of significant spin current generation in Ti/FeCoB bilayers with strong interfacial spin-orbit coupling

Authors: Lijun Zhu, Robert A. Buhrman

Abstract: After one decade of the intensive theoretical and experimental explorations, whether interfacial spin-orbit coupling (ISOC) at metallic magnetic interfaces can effectively generate a spin current has remained in dispute. Here, utilizing the Ti/FeCoB bilayers that are unique for the negligible bulk spin Hall effect and the strong tunable ISOC, we establish that there is no significant charge-to-spi… ▽ More After one decade of the intensive theoretical and experimental explorations, whether interfacial spin-orbit coupling (ISOC) at metallic magnetic interfaces can effectively generate a spin current has remained in dispute. Here, utilizing the Ti/FeCoB bilayers that are unique for the negligible bulk spin Hall effect and the strong tunable ISOC, we establish that there is no significant charge-to-spin conversion at magnetic interfaces via spin-orbit filtering effect or Rashba-Edelstein(-like) effect even when the ISOC is stronger than that of a typical Pt/ferromagnet interface and can promote strong perpendicular magnetic anisotropy. We also find a minimal orbital Hall effect in 3d Ti. △ Less

Submitted 11 February, 2021; v1 submitted 25 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. Applied 15, 031001 (2021)

Observation of strong bulk dam**-like spin-orbit torque in chemically disordered ferromagnetic single layers

Authors: Lijun Zhu, Xiyue S. Zhang, David A. Muller, Daniel C. Ralph, Robert A. Buhrman

Abstract: Strong dam**-like spin-orbit torque (τDL) has great potential for enabling ultrafast energy-efficient magnetic memories, oscillators, and logic. So far, the reported τDL exerted on a thin-film magnet must result from an externally generated spin current or from an internal non-equilibrium spin polarization in noncentrosymmetric GaMnAs single crystals. Here, we for the first time demonstrate a ve… ▽ More Strong dam**-like spin-orbit torque (τDL) has great potential for enabling ultrafast energy-efficient magnetic memories, oscillators, and logic. So far, the reported τDL exerted on a thin-film magnet must result from an externally generated spin current or from an internal non-equilibrium spin polarization in noncentrosymmetric GaMnAs single crystals. Here, we for the first time demonstrate a very strong, unexpected τDL from current flow within ferromagnetic single layers of chemically disordered, face-centered-cubic CoPt. We establish that the novel τDL is a bulk effect, with the strength per unit current density increasing monotonically with the CoPt thickness, and is insensitive to the presence or absence of spin sinks at the CoPt surfaces. This τDL most likely arises from a net transverse spin polarization associated with a strong spin Hall effect (SHE), while there is no detectable long-range asymmetry in the material. These results broaden the scope of spin-orbitronics and provide a novel avenue for develo** single-layer-based spin-torque memory, oscillator, and logic technologies. △ Less

Submitted 19 August, 2020; v1 submitted 12 August, 2020; originally announced August 2020.

Comments: This manuscript is a primary version, see Advanced Functional Materials for the updated manuscript and for the supporting information

Journal ref: Advanced Functional Material, 202005201(2020)

Interfacial Dzyaloshinskii-Moriya interaction and spin-orbit torque in Au1-xPtx/Co bilayers with varying interfacial spin-orbit coupling

Authors: Lijun Zhu, Lujun Zhu, Xin Ma, Xiaoqin Li, Robert A. Buhrman

Abstract: The quantitative roles of the interfacial spin-orbit coupling (SOC) in Dzyaloshinskii-Moriya interaction (DMI) and dam**like spin-orbit torque (τDL) have remained unsettled after a decade of intensive study. Here, we report a conclusive experiment evidence that, because of the critical role of the interfacial orbital hybridization, the interfacial DMI is not necessarily a linear function of the… ▽ More The quantitative roles of the interfacial spin-orbit coupling (SOC) in Dzyaloshinskii-Moriya interaction (DMI) and dam**like spin-orbit torque (τDL) have remained unsettled after a decade of intensive study. Here, we report a conclusive experiment evidence that, because of the critical role of the interfacial orbital hybridization, the interfacial DMI is not necessarily a linear function of the interfacial SOC, e.g. at Au1-xPtx/Co interfaces where the interfacial SOC can be tuned significantly via strongly composition (x)-dependent spin-orbit proximity effect without varying the bulk SOC and the electronegativity of the Au1-xPtx layer. We also find that τDL in the Au1-xPtx/Co bilayers varies distinctly from the interfacial SOC as a function of x, indicating no important τDL contribution from the interfacial Rashba-Edelstein effect. △ Less

Submitted 10 July, 2021; v1 submitted 19 July, 2020; originally announced July 2020.

Journal ref: Communications Physics 5, 151(2022)

Transverse and Longitudinal Spin-Torque Ferromagnetic Resonance for Improved Measurements of Spin-Orbit Torques

Authors: Saba Karimeddiny, Joseph A. Mittelstaedt, Robert A. Buhrman, Daniel C. Ralph

Abstract: Spin-torque ferromagnetic resonance (ST-FMR) is a common method used to measure spin-orbit torques (SOTs) in heavy metal/ferromagnet bilayer structures. In the course of a measurement, other resonant processes such as spin pum** (SP) and heating can cause spin current or heat flows between the layers, inducing additional resonant voltage signals via the inverse spin Hall effect (ISHE) and Nernst… ▽ More Spin-torque ferromagnetic resonance (ST-FMR) is a common method used to measure spin-orbit torques (SOTs) in heavy metal/ferromagnet bilayer structures. In the course of a measurement, other resonant processes such as spin pum** (SP) and heating can cause spin current or heat flows between the layers, inducing additional resonant voltage signals via the inverse spin Hall effect (ISHE) and Nernst effects (NE). In the standard ST-FMR geometry, these extra artifacts exhibit a dependence on the angle of an in-plane magnetic field that is identical to the rectification signal from the SOTs. We show experimentally that the rectification and artifact voltages can be quantified separately by measuring the ST-FMR signal transverse to the applied current (i.e., in a Hall geometry) in addition to the usual longitudinal geometry. We find that in Pt (6 nm)/CoFeB samples the contribution from the artifacts is small compared to the SOT rectification signal for CoFeB layers thinner than 6 nm, but can be significant for thicker magnetic layers. We observe a sign change in the artifact voltage as a function of CoFeB thickness that we suggest may be due to a competition between a resonant heating effect and the SP/ISHE contribution. △ Less

Submitted 6 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. Applied 14, 024024 (2020)

Role of Dirac nodal lines and strain on the high spin Hall conductivity of epitaxial IrO2 thin films

Authors: Arnab Bose, Jocienne N. Nelson, Xiyue S. Zhang, Rakshit Jain, D. G. Schlom, D. C. Ralph, D. A. Muller, K. M. Shen, R. A. Buhrman

Abstract: Since the discovery of a 'giant' spin Hall effect (SHE) in certain heavy metal elements there has been an intense effort to identify and develop new and technologically viable, heavy-metal-based thin film materials that could generate spin currents with even greater efficiency to exert spin-orbit torques (SOT) on adjacent ferromagnetic nanostructures. In parallel, there have been wide ranging fund… ▽ More Since the discovery of a 'giant' spin Hall effect (SHE) in certain heavy metal elements there has been an intense effort to identify and develop new and technologically viable, heavy-metal-based thin film materials that could generate spin currents with even greater efficiency to exert spin-orbit torques (SOT) on adjacent ferromagnetic nanostructures. In parallel, there have been wide ranging fundamental studies of the spin currents that can arise from robust, intrinsic spin-orbit interaction (SOI) effects in more exotic systems including topological insulators, transition metal dichalcogenides with broken crystalline symmetry, Weyl and Dirac semimetals where gapless electronic excitations are protected by topology and symmetry. Here we experimentally study strong SOT from the topological semimetal IrO2 in (001) and (110) normal films, which exhibit distinctly different SHE strengths. Angle resolved photoemission spectroscopy studies have shown IrO2 exhibits Dirac nodal lines (DNL) in the band structure, which could enable a very high spin Hall conductivity (SHC). The (001) films exhibit exceptionally high dam** like torque efficiency ranging from 0.45 at 293 K to 0.65 at 30 K which sets the lower bound of SHC that is ten times higher and of opposite sign than the theoretical prediction. We observe a substantial reduction of SHC in anisotropically strained (110) films, which suggests that the DNLs that are present in the (001) films and contribute to SHC, are disrupted and gapped due to the large anisotropic strain in (110) films, which in turn significantly lowers SHC. Very large value of SHC at room temperature of this Dirac semimetal could be very promising for the practical application. △ Less

Submitted 8 June, 2020; originally announced June 2020.

Journal ref: Applied Materials and Interfaces 2020

Origin of Strong Two-Magnon Scattering in Heavy Metal/Ferromagnet/Oxide Heterostructures

Authors: Lijun Zhu, Lujun Zhu, D. C. Ralph, R. A. Buhrman

Abstract: We experimentally investigate the origin of the two-magnon scattering (TMS) in heavy-metal (HM)/ferromagnet (FM)/oxide heterostructures (FM = Co, Ni81Fe19, or Fe60Co20B20) by varying the materials located above and below the FM layers. We show that strong TMS in HM/FM/oxide systems arises primarily at the HM/FM interface and increases with the strength of interfacial spin-orbit coupling and magnet… ▽ More We experimentally investigate the origin of the two-magnon scattering (TMS) in heavy-metal (HM)/ferromagnet (FM)/oxide heterostructures (FM = Co, Ni81Fe19, or Fe60Co20B20) by varying the materials located above and below the FM layers. We show that strong TMS in HM/FM/oxide systems arises primarily at the HM/FM interface and increases with the strength of interfacial spin-orbit coupling and magnetic roughness at this interface. TMS at the FM/oxide interface is relatively weak, even in systems where spin-orbit coupling at this interface generates strong interfacial magnetic anisotropy. We also suggest that the spin-current-induced excitation of non-uniform short-wavelength magnon at the HM/FM interface may function as a mechanism of spin memory loss for the spin-orbit torque exerted on the uniform mode. △ Less

Submitted 1 January, 2020; originally announced January 2020.

Journal ref: Phys. Rev. Applied 13, 034038 (2020)

Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75

Authors: Lijun Zhu, Lujun Zhu, Shengjie Shi, D. C. Ralph, R. A. Buhrman

Abstract: Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a challenge. Non-volatile magnetoresistive random access memories (MRAMs) driven by spin-orbit torques (SOTs) have promise to be faster and more energy-efficient th… ▽ More Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a challenge. Non-volatile magnetoresistive random access memories (MRAMs) driven by spin-orbit torques (SOTs) have promise to be faster and more energy-efficient than conventional semiconductor and spin-transfer-torque magnetic memories. This work reports that the spin Hall effect of low-resistivity Au0.25Pt0.75 thin films enables ultrafast antidam**-torque switching of SOT-MRAM devices for current pulse widths as short as 200 ps. If combined with industrial-quality lithography and already-demonstrated interfacial engineering, our results show that an optimized MRAM cell based on Au0.25Pt0.75 can have energy-efficient, ultrafast, and reliable switching, e.g. a write energy of < 1 fJ (< 50 fJ) for write error rate of 50% (<1e-5) for 1 ns pulses. The antidam** torque switching of the Au0.25Pt0.75 devices is 10 times faster than expected from a rigid macrospin model, most likely because of the fast micromagnetics due to the enhanced non-uniformity within the free layer. These results demonstrate the feasibility of Au0.25Pt0.75-based SOT-MRAMs as a candidate for ultrafast, reliable, energy-efficient, low-impedance, and unlimited-endurance memory. △ Less

Submitted 28 October, 2019; v1 submitted 25 October, 2019; originally announced October 2019.

Journal ref: Advanced Electronic Materials,1901131 (2020)

Nanosecond Reversal of Three-Terminal Spin Hall Effect Memories Sustained at Cryogenic Temperatures

Authors: Graham E. Rowlands, Minh-Hai Nguyen, Sriharsha V. Aradhya, Shengjie Shi, Colm A. Ryan, Robert A. Buhrman, Thomas A. Ohki

Abstract: We characterize the nanosecond pulse switching performance of the three-terminal magnetic tunnel junctions (MTJs), driven by the spin Hall effect (SHE) in the channel, at a cryogenic temperature of 3 K. The SHE-MTJ devices exhibit reasonable magnetic switching and reliable current switching by as short pulses as 1 ns of $<10^{12}$ A/m$^{2}$ magnitude, exceeding the expectation from conventional ma… ▽ More We characterize the nanosecond pulse switching performance of the three-terminal magnetic tunnel junctions (MTJs), driven by the spin Hall effect (SHE) in the channel, at a cryogenic temperature of 3 K. The SHE-MTJ devices exhibit reasonable magnetic switching and reliable current switching by as short pulses as 1 ns of $<10^{12}$ A/m$^{2}$ magnitude, exceeding the expectation from conventional macrospin model. The pulse switching bit error rates reach below $10^{-6}$ for < 10 ns pulses. Similar performance is achieved with exponentially decaying pulses expected to be delivered to the SHE-MTJ device by a nanocryotron device in parallel configuration of a realistic memory cell structure. These results suggest the viability of the SHE-MTJ structure as a cryogenic memory element for exascale superconducting computing systems. △ Less

Submitted 23 September, 2019; originally announced September 2019.

Comments: 12 pages, 5 figures

Journal ref: Phys. Rev. Applied 15, 021004 (2021)

Maximizing the spin-orbit torque efficiency of Pt/Ti multilayers by optimization of the tradeoff between the intrinsic spin Hall conductivity and carrier lifetime

Authors: Lijun Zhu, R. A. Buhrman

Abstract: We report a comprehensive study of the maximization of the spin Hall ratio (θSH) in Pt thin films by the insertion of sub-monolayer layers of Ti to decrease carrier lifetime while minimizing the concurrent reduction in the spin Hall conductivity. We establish that the intrinsic spin Hall conductivity of Pt, while robust against the strain and the moderate interruption of crystal order caused by th… ▽ More We report a comprehensive study of the maximization of the spin Hall ratio (θSH) in Pt thin films by the insertion of sub-monolayer layers of Ti to decrease carrier lifetime while minimizing the concurrent reduction in the spin Hall conductivity. We establish that the intrinsic spin Hall conductivity of Pt, while robust against the strain and the moderate interruption of crystal order caused by these insertions, begins to decrease rapidly at high resistivity level because of the shortening carrier lifetime. The unavoidable trade-off between the intrinsic spin Hall conductivity and carrier lifetime sets a practical upper bound of θSH >=0.8 for heterogeneous materials where the crystalline Pt component is the source of the spin Hall effect and the resistivity is increased by shortening carrier lifetime. This work also establishes a very promising spin-Hall metal of [Pt 0.75 nm/Ti 0.2 nm]7/Pt 0.75 nm for energy-efficient, high-endurance spin-orbit torque technologies (e.g., memories, oscillators, and logic) due to its combination of a giant θSH of 0.8, or equivalently a dam**like spin torque efficiency per unit current density of 0.35, with a relatively low resistivity (90 uOhm cm) and high suitability for practical technology integration. △ Less

Submitted 18 August, 2019; originally announced August 2019.

Journal ref: Phys. Rev. Applied 12, 051002 (2019)

Cryogenic Memory Architecture Integrating Spin Hall Effect based Magnetic Memory and Superconductive Cryotron Devices

Authors: Minh-Hai Nguyen, Guilhem J. Ribeill, Martin Gustafsson, Shengjie Shi, Sriharsha V. Aradhya, Andrew P. Wagner, Leonardo M. Ranzani, Lijun Zhu, Reza Baghdadi3 Brenden Butters, Emily Toomey, Marco Colangelo, Patrick A. Truitt, Amir Jafari-Salim, David McAllister, Daniel Yohannes, Sean R. Cheng, Rich Lazarus, Oleg Mukhanov, Karl K. Berggren, Robert A. Buhrman, Graham E. Rowlands, Thomas A. Ohki

Abstract: One of the most challenging obstacles to realizing exascale computing is minimizing the energy consumption of L2 cache, main memory, and interconnects to that memory. For promising cryogenic computing schemes utilizing Josephson junction superconducting logic, this obstacle is exacerbated by the cryogenic system requirements that expose the technology's lack of high-density, high-speed and power-e… ▽ More One of the most challenging obstacles to realizing exascale computing is minimizing the energy consumption of L2 cache, main memory, and interconnects to that memory. For promising cryogenic computing schemes utilizing Josephson junction superconducting logic, this obstacle is exacerbated by the cryogenic system requirements that expose the technology's lack of high-density, high-speed and power-efficient memory. Here we demonstrate an array of cryogenic memory cells consisting of a non-volatile three-terminal magnetic tunnel junction element driven by the spin Hall effect, combined with a superconducting heater-cryotron bit-select element. The write energy of these memory elements is roughly 8 pJ with a bit-select element, designed to achieve a minimum overhead power consumption of about 30%. Individual magnetic memory cells measured at 4 K show reliable switching with write error rates below $10^{-6}$, and a 4x4 array can be fully addressed with bit select error rates of $10^{-6}$. This demonstration is a first step towards a full cryogenic memory architecture targeting energy and performance specifications appropriate for applications in superconducting high performance and quantum computing control systems, which require significant memory resources operating at 4 K. △ Less

Submitted 1 July, 2019; originally announced July 2019.

Comments: 10 pages, 6 figures, submitted

Layer-dependent spin-orbit torques generated by the centrosymmetric transition metal dichalcogenide $β$-MoTe$_2$

Authors: Gregory M. Stiehl, Ruofan Li, Vishakha Gupta, Ismail El Baggari, Shengwei Jiang, Hongchao Xie, Lena F. Kourkoutis, Kin Fai Mak, Jie Shan, Robert A. Buhrman, Daniel C. Ralph

Abstract: Single-crystal materials with sufficiently low crystal symmetry and strong spin-orbit interactions can be used to generate novel forms of spin-orbit torques on adjacent ferromagnets, such as the out-of-plane antidam** torque previously observed in WTe$_2$/ferromagnet heterostructures. Here, we present measurements of spin-orbit torques produced by the low-symmetry material $β$-MoTe$_2$, which un… ▽ More Single-crystal materials with sufficiently low crystal symmetry and strong spin-orbit interactions can be used to generate novel forms of spin-orbit torques on adjacent ferromagnets, such as the out-of-plane antidam** torque previously observed in WTe$_2$/ferromagnet heterostructures. Here, we present measurements of spin-orbit torques produced by the low-symmetry material $β$-MoTe$_2$, which unlike WTe$_2$ retains bulk inversion symmetry. We measure spin-orbit torques on $β$-MoTe$_2$/Permalloy heterostructures using spin-torque ferromagnetic resonance as a function of crystallographic alignment and MoTe$_2$ thickness down to the monolayer limit. We observe an out-of-plane antidam** torque with a spin torque conductivity as strong as 1/3 of that of WTe$_2$, demonstrating that the breaking of bulk inversion symmetry in the spin-generation material is not a necessary requirement for producing an out-of-plane antidam** torque. We also measure an unexpected dependence on the thickness of the $β$-MoTe$_2$ -- the out-of-plane antidam** torque is present in MoTe$_2$/Permalloy heterostructures when the $β$-MoTe$_2$ is a monolayer or trilayer thick, but goes to zero for devices with bilayer $β$-MoTe$_2$. △ Less

Submitted 3 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. B 100, 184402 (2019)

Intrinsic nature of the giant spin Hall conductivity of Pt

Authors: Lijun Zhu, Lujun Zhu, Manling Sui, Daniel C. Ralph, Robert A. Buhrman

Abstract: More than a decade after the first theoretical and experimental studies of the spin Hall conductivity (SHC) of Pt, both its dominant origin and amplitude remain in dispute. Resolving these questions is of fundamental importance for advancing understanding of very strong spin-orbit effects in conducting systems and for maximizing the spin Hall effect for energy-efficient spintronics applications. H… ▽ More More than a decade after the first theoretical and experimental studies of the spin Hall conductivity (SHC) of Pt, both its dominant origin and amplitude remain in dispute. Resolving these questions is of fundamental importance for advancing understanding of very strong spin-orbit effects in conducting systems and for maximizing the spin Hall effect for energy-efficient spintronics applications. Here, we report the experimental determination of the rapid variation of the intrinsic SHC of Pt with the carrier lifetime (τ) in the dirty-metal regime by incorporating finely dispersed MgO inter-site impurities into the Pt while maintaining the essential elements of its band structure (face-centered-cubic order). This findings conclusively validate the theoretical prediction that the SHC in Pt in the dirty-metal regime should be dominated by the intrinsic Berry curvature contribution and should decrease rapidly with shortening τ. This also establishes the limit to which the spin Hall ratio θSH of pure Pt can be increased by shortening τ. When the spin backflow at the Pt/ferromagnet interface due to the finite interfacial spin-mixing conductance is taken into account, the amplitude of the intrinsic SHC of Pt in the clean limit is found to be at least 1.6x10^6 (h_bar/2e) Ω-1 m-1, more than 3.5 times greater than the available theoretical predictions. Our work also establishes a compelling spin Hall metal Pt0.6(MgO)0.4 that combines a giant θSH (0.73) with a moderate resistivity (74 μΩ cm), a strong Dzyaloshinskii-Moriya interaction, easy growth, and good integration compatibility for spintronics technology. △ Less

Submitted 7 June, 2019; v1 submitted 11 May, 2019; originally announced May 2019.

Journal ref: Science Advances 5,eaav8025(2019)

Effective spin-mixing conductance of heavy-metal-ferromagnet interfaces

Authors: Lijun Zhu, Daniel C. Ralph, Robert A. Buhrman

Abstract: The effective spin-mixing conductance (G_eff) of a heavy metal/ferromagnet (HM/FM) interface characterizes the efficiency of the interfacial spin transport.Accurately determining G_eff is critical to the quantitative understanding of measurements of direct and inverse spin Hall effects. G_eff is typically ascertained from the inverse dependence of magnetic dam** on the FM thickness under the ass… ▽ More The effective spin-mixing conductance (G_eff) of a heavy metal/ferromagnet (HM/FM) interface characterizes the efficiency of the interfacial spin transport.Accurately determining G_eff is critical to the quantitative understanding of measurements of direct and inverse spin Hall effects. G_eff is typically ascertained from the inverse dependence of magnetic dam** on the FM thickness under the assumption that spin pum** is the dominant mechanism affecting this dependence.Here we report that, this assumption fails badly in many in-plane magnetized prototypical HM/FM systems in the nm-scale thickness regime. Instead, the majority of the dam** is from two-magnon scattering at the FM interface, while spin-memory-loss scattering at the interface can also be significant.If these two effects are neglected, the results will be an unphysical "giant" apparent G_eff and hence considerable underestimation of both the spin Hall ratio and the spin Hall conductivity in inverse/direct spin Hall experiments. △ Less

Submitted 7 August, 2019; v1 submitted 4 May, 2019; originally announced May 2019.

Journal ref: Phys. Rev. Lett. 123, 057203 (2019)

Enhancing spin-orbit torque by strong interfacial scattering from ultra-thin insertion layers

Authors: Lijun Zhu, Lujun Zhu, Shengjie Shi, Manling Sui, D. C. Ralph, R. A. Buhrman

Abstract: Increasing dam**like spin-orbit torque (SOT) is both of fundamental importance for enabling new research into spintronics phenomena and also technologically urgent for advancing low-power spin-torque memory, logic, and oscillator devices. Here, we demonstrate that enhancing interfacial scattering by inserting ultra-thin layers within a spin Hall metals with intrinsic or side-jump mechanisms can… ▽ More Increasing dam**like spin-orbit torque (SOT) is both of fundamental importance for enabling new research into spintronics phenomena and also technologically urgent for advancing low-power spin-torque memory, logic, and oscillator devices. Here, we demonstrate that enhancing interfacial scattering by inserting ultra-thin layers within a spin Hall metals with intrinsic or side-jump mechanisms can significantly enhance the spin Hall ratio. The dam**like SOT was enhanced by a factor of 2 via sub-monolayer Hf insertion, as evidenced by both harmonic response measurements and current-induced switching of in-plane magnetized magnetic memory devices with the record low critical switching current of ~73 uA (switching current density of 3.6x10^6 A/cm^2). This work demonstrates a very effective strategy for maximizing dam**like SOT for low-power spin-torque devices. △ Less

Submitted 16 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. Applied 11, 061004 (2019)

Enhancement of spin transparency by interfacial alloying

Authors: Lijun Zhu, Daniel C. Ralph, Robert A. Buhrman

Abstract: We report that atomic-layer alloying (intermixing) at a Pt/Co interface can increase, by approximately 30%, rather than degrade the interfacial spin transparency, and thereby strengthen the efficiency of the dam**like spin-orbit torque arising from the spin Hall effect in the Pt. At the same time, this interfacial alloying substantially reduces fieldlike spin-orbit torque. Insertion of an ultrat… ▽ More We report that atomic-layer alloying (intermixing) at a Pt/Co interface can increase, by approximately 30%, rather than degrade the interfacial spin transparency, and thereby strengthen the efficiency of the dam**like spin-orbit torque arising from the spin Hall effect in the Pt. At the same time, this interfacial alloying substantially reduces fieldlike spin-orbit torque. Insertion of an ultrathin magnetic alloy layer at heavy-metal/ferromagnet interfaces represents an effective approach for improving interfacial spin transparency that may enhance not only spin-orbit torques but also the spin detection efficiency in inverse spin Hall experiments. △ Less

Submitted 10 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. B 99, 180404 (2019)

Strong dam**-like spin-orbit torque and tunable Dzyaloshinskii-Moriya interaction generated by low-resistivity Pd$_{1-x}$Pt$_x$ alloys

Authors: Lijun Zhu, Kemal Sobotkiewich, Xin Ma, Xiaoqin Li, Daniel. C. Ralph, Robert A. Buhrman

Abstract: Despite their great promise for providing a pathway for very efficient and fast manipulation of magnetization at the nanoscale, spin-orbit torque (SOT) operations are currently energy inefficient due to a low dam**-like SOT efficiency per unit current bias, and/or the very high resistivity of the spin Hall materials. Here, we report an advantageous spin Hall material, Pd1-xPtx, which combines a… ▽ More Despite their great promise for providing a pathway for very efficient and fast manipulation of magnetization at the nanoscale, spin-orbit torque (SOT) operations are currently energy inefficient due to a low dam**-like SOT efficiency per unit current bias, and/or the very high resistivity of the spin Hall materials. Here, we report an advantageous spin Hall material, Pd1-xPtx, which combines a low resistivity with a giant spin Hall effect as evidenced through the use of three independent SOT ferromagnetic detectors. The optimal Pd0.25Pt0.75 alloy has a giant internal spin Hall ratio of >0.47 (dam**-like SOT efficiency of ~ 0.26 for all three ferromagnets) and a low resistivity of ~57.5 μΩ cm at 4 nm thickness. Moreover, we find the Dzyaloshinskii-Moriya interaction (DMI), the key ingredient for the manipulation of chiral spin arrangements (e.g. magnetic skyrmions and chiral domain walls), is considerably strong at the Pd1-xPtx/Fe0.6Co0.2B0.2 interface when compared to that at Ta/Fe0.6Co0.2B0.2 or W/Fe0.6Co0.2B0.2 interfaces and can be tuned by a factor of 5 through control of the interfacial spin-orbital coupling via the heavy metal composition. This work establishes a very effective spin current generator that combines a notably high energy efficiency with a very strong and tunable DMI for advanced chiral spintronics and spin torque applications. △ Less

Submitted 28 January, 2019; originally announced January 2019.

Comments: Submitted to Advanced Functional Materials on Augest 21, 2018

Journal ref: Advanced Functional Materials,1805822 (2019)

Current-Induced Torques with Dresselhaus Symmetry Due to Resistance Anisotropy in 2D Materials

Authors: Gregory M. Stiehl, David MacNeill, Nikhil Sivadas, Ismail El Baggari, Marcos H. D. Guimaraes, Neal D. Reynolds, Lena F. Kourkoutis, Craig J. Fennie, Robert A. Buhrman, Daniel C. Ralph

Abstract: We report measurements of current-induced torques in heterostructures of Permalloy (Py) with TaTe$_2$, a transition-metal dichalcogenide (TMD) material possessing low crystal symmetry, and observe a torque component with Dresselhaus symmetry. We suggest that the dominant mechanism for this Dresselhaus component is not a spin-orbit torque, but rather the Oersted field arising from a component of cu… ▽ More We report measurements of current-induced torques in heterostructures of Permalloy (Py) with TaTe$_2$, a transition-metal dichalcogenide (TMD) material possessing low crystal symmetry, and observe a torque component with Dresselhaus symmetry. We suggest that the dominant mechanism for this Dresselhaus component is not a spin-orbit torque, but rather the Oersted field arising from a component of current that flows perpendicular to the applied voltage due to resistance anisotropy within the TaTe$_2$. This type of transverse current is not present in wires made from a single uniform layer of a material with resistance anisotropy, but will result whenever a material with resistance anisotropy is integrated into a heterostructure with materials having different resistivities, thereby producing a spatially non-uniform pattern of current flow. This effect will therefore influence measurements in a wide variety of heterostructures incorporating 2D TMD materials and other materials with low crystal symmetries. △ Less

Submitted 25 January, 2019; originally announced January 2019.

Journal ref: ACS Nano (2019)

Spin-orbit torques in heavy metal/ferromagnet bilayers with varying strength of interfacial spin-orbit coupling

Authors: Lijun Zhu, D. C. Ralph, R. A. Buhrman

Abstract: Despite intense efforts it has remained unresolved whether and how interfacial spin-orbit coupling (ISOC) affects spin transport across heavy metal (HM)/ferromagnet (FM) interfaces. Here we report conclusive experiment evidence that the ISOC at HM/FM interfaces is the dominant mechanism for "spin memory loss". An increase in ISOC significantly reduces, in a linear manner, the dam**like spin-orbi… ▽ More Despite intense efforts it has remained unresolved whether and how interfacial spin-orbit coupling (ISOC) affects spin transport across heavy metal (HM)/ferromagnet (FM) interfaces. Here we report conclusive experiment evidence that the ISOC at HM/FM interfaces is the dominant mechanism for "spin memory loss". An increase in ISOC significantly reduces, in a linear manner, the dam**like spin-orbit torque (SOT) exerted on the FM layer via degradation of the spin transparency of the interface for spin currents generated in the HM. In addition, the fieldlike SOT is also dominated by the spin Hall contribution of the HM and decreases with increasing ISOC. This work reveals that ISOC at HM/FM interfaces should be minimized to advance efficient SOT devices through atomic layer passivation of the HM/FM interface or other means. △ Less

Submitted 11 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. Lett. 122, 077201 (2019)

Spin-orbit torques acting upon a perpendicularly-magnetized Py layer

Authors: Tian-Yue Chen, Yongxi Ou, Tsung-Yu Tsai, Robert A. Buhrman, Chi-Feng Pai

Abstract: We show that Py, a commonly-used soft ferromagnetic material with weak anisotropy, can become perpendicularly-magnetized while depositing on Ta buffer layer with Hf or Zr insertion layers (ILs) and MgO cap** layer. By using two different approaches, namely harmonic voltage measurement and hysteresis loop shift measurement, the dam**like spin-orbit torque (DL-SOT) efficiencies from Ta/IL/Py/IL/… ▽ More We show that Py, a commonly-used soft ferromagnetic material with weak anisotropy, can become perpendicularly-magnetized while depositing on Ta buffer layer with Hf or Zr insertion layers (ILs) and MgO cap** layer. By using two different approaches, namely harmonic voltage measurement and hysteresis loop shift measurement, the dam**like spin-orbit torque (DL-SOT) efficiencies from Ta/IL/Py/IL/MgO magnetic heterostructures with perpendicular magnetic anisotropy are characterized. We find that though Ta has a significant spin Hall effect, the DL-SOT efficiencies are small in systems with the Ta/Py interface compared to that obtained from the control sample with the traditional Ta/CoFeB interface. Our results indicate that the spin transparency for the Ta/Py interface is much less than that for the Ta/CoFeB interface, which might be related to the variation of spin mixing conductance for different interfaces. △ Less

Submitted 13 November, 2018; originally announced November 2018.

Journal ref: APL Materials 6, 121101 (2018)

Exceptionally high, strongly temperature dependent, spin Hall conductivity of SrRuO3

Authors: Yongxi Ou, Zhe Wang, Celesta S. Chang, Hari P. Nair, Hanjong Paik, Neal Reynolds, D. C. Ralph, D. A. Muller, D. G. Schlom, R. A. Buhrman

Abstract: Spin-orbit torques (SOT) in thin film heterostructures originate from strong spin-orbit interactions (SOI) that, in the bulk, generate a spin current as the result of extrinsic spin-dependent, skew or/and side-jump, scattering, or in the intrinsic case due to Berry curvature in the conduction band. While most SOT studies have focused on materials with heavy metal components, the oxide perovskite S… ▽ More Spin-orbit torques (SOT) in thin film heterostructures originate from strong spin-orbit interactions (SOI) that, in the bulk, generate a spin current as the result of extrinsic spin-dependent, skew or/and side-jump, scattering, or in the intrinsic case due to Berry curvature in the conduction band. While most SOT studies have focused on materials with heavy metal components, the oxide perovskite SrRuO3 has been predicted to have a pronounced Berry curvature. Through quantification of its spin current by the SOT exerted on an adjacent Co ferromagnetic layer, we determine that SrRuO3 has a strongly temperature (T) dependent spin Hall conductivity which becomes particularly high at low T, e.g. σ_{SH} \geqslant (\hbar/2e)3x10^{5} Ω^{-1}m^{-1} at 60 K. Below the SrRuO3 ferromagnetic transition, non-standard SOT components develop associated with the magnetic characteristics of the oxide, but these do not dominate as with spin currents from a conventional ferromagnet. Our results establish a new approach for the study of SOI in epitaxial conducting oxide heterostructures and confirm SrRuO3 as a promising candidate material for achieving new and enhanced spintronics functionalities. △ Less

Submitted 25 October, 2018; originally announced October 2018.

Comments: 3 Figures

Journal ref: Nano Lett. 2019, 19, 6, 3663-3670

Irrelevance of magnetic proximity effect to spin-orbit torques in heavy metal/ferromagnet bilayers

Authors: L. J. Zhu, D. C. Ralph, R. A. Buhrman

Abstract: The magnetic proximity effect (MPE) is a well-established magnetic phenomenon that occurs at certain heavy metal (HM)/ferromagnet (FM) interfaces. However, there is still an active debate as to whether the presence of a MPE affects spin transport through such a HM/FM interface. Here we demonstrate that the MPE at Pt/Co and Au0.25Pt0.75/Co interfaces can be enhanced substantially by thermal anneali… ▽ More The magnetic proximity effect (MPE) is a well-established magnetic phenomenon that occurs at certain heavy metal (HM)/ferromagnet (FM) interfaces. However, there is still an active debate as to whether the presence of a MPE affects spin transport through such a HM/FM interface. Here we demonstrate that the MPE at Pt/Co and Au0.25Pt0.75/Co interfaces can be enhanced substantially by thermal annealing protocols. From this ability, we show that the MPE has no discernable influence on either the dam**-like or the field-like spin-orbit torques exerted on the FM layer due to the spin Hall effect of the HM layer, indicating a minimal role of the MPE compared to other interfacial effects, e.g. spin memory loss and spin backflow. △ Less

Submitted 15 September, 2018; v1 submitted 8 September, 2018; originally announced September 2018.

Journal ref: Phys. Rev. B 98, 134406 (2018)

Highly efficient spin current generation by the spin Hall effect in Au$_{1-x}$Pt$_x$

Authors: Lijun Zhu, Daniel. C. Ralph, Robert A. Buhrman

Abstract: We report very efficient spin current generation by the spin Hall effect in the alloy Au0.25Pt0.75, which, as determined by two different direct spin-orbit torque measurements, exhibits a giant internal spin Hall ratio of > 0.58 (anti-dam** spin-orbit torque efficiency of ~ 0.35 in bilayers with Co), a relatively low resistivity of ~ 83 uOhm cm, an exceptionally large spin Hall conductivity of >… ▽ More We report very efficient spin current generation by the spin Hall effect in the alloy Au0.25Pt0.75, which, as determined by two different direct spin-orbit torque measurements, exhibits a giant internal spin Hall ratio of > 0.58 (anti-dam** spin-orbit torque efficiency of ~ 0.35 in bilayers with Co), a relatively low resistivity of ~ 83 uOhm cm, an exceptionally large spin Hall conductivity of > 7.0x10^5 ohm^-1 m^-1, and a spin diffusion length of 1.7 nm. This work establishes Au0.25Pt0.75 as a milestone spin current generator that provides greater energy efficiency than that yet obtained with other heavy metals or with the topological insulators Bi2Se3 and (Bi,Se)2Te3. Our findings should advance spin-orbit torque-based fundamental research and benefit the development of new fast, efficient spin-orbit torque-driven magnetic memories, skyrmion and chiral domain wall devices, and microwave and terahertz emitters. △ Less

Submitted 12 June, 2018; v1 submitted 6 May, 2018; originally announced May 2018.

Journal ref: Phys. Rev. Applied 10, 031001 (2018)

Strong enhancement of the spin Hall effect by spin fluctuations near the Curie point of FexPt1-x alloys

Authors: Yongxi Ou, D. C. Ralph, R. A. Buhrman

Abstract: Robust spin Hall effects (SHE) have recently been observed in non-magnetic heavy metal systems with strong spin-orbit interactions. These SHE are either attributed to an intrinsic band-structure effect or to extrinsic spin-dependent scattering from impurities, namely side-jump or skew scattering. Here we report on an extraordinarily strong spin Hall effect, attributable to spin fluctuations, in fe… ▽ More Robust spin Hall effects (SHE) have recently been observed in non-magnetic heavy metal systems with strong spin-orbit interactions. These SHE are either attributed to an intrinsic band-structure effect or to extrinsic spin-dependent scattering from impurities, namely side-jump or skew scattering. Here we report on an extraordinarily strong spin Hall effect, attributable to spin fluctuations, in ferromagnetic FexPt1-x alloys near their Curie point, tunable with x. This results in a dam**-like spin-orbit torque being exerted on an adjacent ferromagnetic layer that is strongly temperature dependent in this transition region, with a peak value that indicates a lower bound 0.34 (+-) 0.02 for the peak spin Hall ratio within the FePt. We also observe a pronounced peak in the effective spin-mixing conductance of the FM/FePt interface, and determine the spin diffusion length in these FexPt1-x alloys. These results establish new opportunities for fundamental studies of spin dynamics and transport in ferromagnetic systems with strong spin fluctuations, and a new pathway for efficiently generating strong spin currents for applications. △ Less

Submitted 19 February, 2018; originally announced February 2018.

Comments: 23 pages, 4 figures. Accepted in Physical Review Letters

Journal ref: Phys. Rev. Lett. 120, 097203, 2018

Efficient Switching of 3-Terminal Magnetic Tunnel Junctions by the Giant Spin Hall Effect of $\rm{Pt}_{85}\rm{Hf}_{15}$ Alloy

Authors: Minh-Hai Nguyen, Shengjie Shi, Graham E. Rowlands, Sriharsha V. Aradhya, Colin L. Jermain, D. C. Ralph, R. A. Buhrman

Abstract: Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here we directly demonstrate the usefulness of this strategy by fabricating prototype 3-terminal in-plane-magnetized magnetic tunnel junctions that utilize the spin Hall torque from a $\rm{Pt}_{85}\rm{Hf}_{15}$ alloy, and measuring the criti… ▽ More Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here we directly demonstrate the usefulness of this strategy by fabricating prototype 3-terminal in-plane-magnetized magnetic tunnel junctions that utilize the spin Hall torque from a $\rm{Pt}_{85}\rm{Hf}_{15}$ alloy, and measuring the critical currents for switching. We find that $\rm{Pt}_{85}\rm{Hf}_{15}$ reduces the switching current densities compared to pure Pt by approximately a factor of 2 for both quasi-static ramped current biases and nanosecond-scale current pulses, thereby proving the feasibility of this approach to assist in the development of efficient embedded magnetic memory technologies. △ Less

Submitted 1 January, 2018; originally announced January 2018.

Comments: PDF file includes main text and supplemental information. Submitted to peer-reviewed journal

Fast, low-current spin-orbit torque switching of magnetic tunnel junctions through atomic modifications of the free layer interfaces

Authors: Shengjie Shi, Yongxi Ou, S. V. Aradhya, D. C. Ralph, R. A. Buhrman

Abstract: Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale performance with low write error rates. Here we demonstrate a strategy to simultaneously enhance the interfacial magnetic anisotropy energy and suppress interfacial spi… ▽ More Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale performance with low write error rates. Here we demonstrate a strategy to simultaneously enhance the interfacial magnetic anisotropy energy and suppress interfacial spin memory loss by introducing sub-atomic and monatomic layers of Hf at the top and bottom interfaces of the ferromagnetic free layer of an in-plane magnetized three-terminal MTJ device. When combined with a beta-W spin Hall channel that generates spin-orbit torque, the cumulative effect is a switching current density of 5.4 x 106 A/cm2, more than a factor of 3 lower than demonstrated in any other spin-orbit-torque magnetic memory device at room temperature, and highly reliable switching with current pulses only 2 ns long. △ Less

Submitted 17 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. Applied 9, 011002 (2018)

Reorientable Spin Direction for Spin Current Produced by the Anomalous Hall Effect

Authors: Jonathan D. Gibbons, David MacNeill, Robert A. Buhrman, Daniel C. Ralph

Abstract: We show experimentally that the spin direction of the spin current generated by spin-orbit interactions within a ferromagnetic layer can be reoriented by turning the magnetization direction of this layer. We do this by measuring the field-like component of spin-orbit torque generated by an exchange-biased FeGd thin film and acting on a nearby CoFeB layer. The relative angle of the CoFeB and FeGd m… ▽ More We show experimentally that the spin direction of the spin current generated by spin-orbit interactions within a ferromagnetic layer can be reoriented by turning the magnetization direction of this layer. We do this by measuring the field-like component of spin-orbit torque generated by an exchange-biased FeGd thin film and acting on a nearby CoFeB layer. The relative angle of the CoFeB and FeGd magnetic moments is varied by applying an external magnetic field. We find that the resulting torque is in good agreement with predictions that the spin current generated by the anomalous Hall effect from the FeGd layer depends on the FeGd magnetization direction $\hat{m}_{FeGd}$ according to $\vecσ\propto\left ( \hat{y}\cdot \hat{m}_{FeGd} \right )\hat{m}_{FeGd}$, where $\hat{y}$ is the in-plane direction perpendicular to the applied charge current. Because of this angular dependence, the spin-orbit torque arising from the anomalous Hall effect can be non-zero in a sample geometry for which the spin Hall torque generated by non-magnetic materials is identically zero. △ Less

Submitted 26 July, 2017; originally announced July 2017.

Comments: 24 pages, 5 figures, 1 table

Journal ref: Phys. Rev. Applied 9, 064033 (2018)

Thickness dependence of spin-orbit torques generated by WTe2

Authors: David MacNeill, Gregory M. Stiehl, Marcos H. D. Guimaraes, Neal D. Reynolds, Robert A. Buhrman, Daniel C. Ralph

Abstract: We study current-induced torques in WTe2/permalloy bilayers as a function of WTe2 thickness. We measure the torques using both second-harmonic Hall and spin-torque ferromagnetic resonance measurements for samples with WTe2 thicknesses that span from 16 nm down to a single monolayer. We confirm the existence of an out-of-plane antidam** torque, and show directly that the sign of this torque compo… ▽ More We study current-induced torques in WTe2/permalloy bilayers as a function of WTe2 thickness. We measure the torques using both second-harmonic Hall and spin-torque ferromagnetic resonance measurements for samples with WTe2 thicknesses that span from 16 nm down to a single monolayer. We confirm the existence of an out-of-plane antidam** torque, and show directly that the sign of this torque component is reversed across a monolayer step in the WTe2. The magnitude of the out-of-plane antidam** torque depends only weakly on WTe2 thickness, such that even a single-monolayer WTe2 device provides a strong torque that is comparable to much thicker samples. In contrast, the out-of-plane field-like torque has a significant dependence on the WTe2 thickness. We demonstrate that this field-like component originates predominantly from the Oersted field, thereby correcting a previous inference drawn by our group based on a more limited set of samples. △ Less

Submitted 12 July, 2017; originally announced July 2017.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. B 96, 054450 (2017)

Strong perpendicular magnetic anisotropy energy density at Fe alloy/HfO2 interfaces

Authors: Yongxi Ou, D. C. Ralph, R. A. Buhrman

Abstract: We report on the perpendicular magnetic anisotropy (PMA) behavior of heavy metal (HM)/ Fe alloy/MgO thin film heterostructures after an ultrathin HfO2 passivation layer is inserted between the Fe alloy and the MgO. This is accomplished by depositing one to two atomic layers of Hf onto the Fe alloy before the subsequent rf sputter deposition of the MgO layer. This Hf layer is fully oxidized during… ▽ More We report on the perpendicular magnetic anisotropy (PMA) behavior of heavy metal (HM)/ Fe alloy/MgO thin film heterostructures after an ultrathin HfO2 passivation layer is inserted between the Fe alloy and the MgO. This is accomplished by depositing one to two atomic layers of Hf onto the Fe alloy before the subsequent rf sputter deposition of the MgO layer. This Hf layer is fully oxidized during the subsequent deposition of the MgO layer, as confirmed by X-ray photoelectron spectroscopy measurements. As the result a strong interfacial perpendicular anisotropy energy density can be achieved without any post-fabrication annealing treatment, for example 1.7 erg/cm^2 for the Ta/Fe60Co20B20/HfO2/MgO heterostructure. Depending on the HM, further enhancements of the PMA can be realized by thermal annealing to at least 400C. We show that ultra-thin HfO2 layers offer a range of options for enhancing the magnetic properties of magnetic heterostructures for spintronics applications. △ Less

Submitted 14 January, 2017; originally announced January 2017.

Comments: 16 pages; 3 figures

Journal ref: Appl. Phys. Lett. 110, 192403 (2017)

Nanosecond magnetization dynamics during spin Hall switching of in-plane magnetic tunnel junctions

Authors: Graham E. Rowlands, Sriharsha V. Aradhya, Shengjie Shi, Erin H. Yandel, Junseok Oh, Daniel C. Ralph, Robert A. Buhrman

Abstract: We present a study of the magnetic dynamics associated with nanosecond scale magnetic switching driven by the spin Hall effect in 3-terminal nanoscale magnetic tunnel junctions (3T-MTJs) with in-plane magnetization. Utilizing fast pulse measurements in a variety of material stacks and detailed micromagnetic simulations, we demonstrate that this unexpectedly fast and reliable magnetic reversal is f… ▽ More We present a study of the magnetic dynamics associated with nanosecond scale magnetic switching driven by the spin Hall effect in 3-terminal nanoscale magnetic tunnel junctions (3T-MTJs) with in-plane magnetization. Utilizing fast pulse measurements in a variety of material stacks and detailed micromagnetic simulations, we demonstrate that this unexpectedly fast and reliable magnetic reversal is facilitated by the self-generated Oersted field, and the short-pulse energy efficiency can be substantially enhanced by micromagnetic curvature in the magnetic free layer. The sign of the Oersted field is essential for this enhancement --- in simulations in which we artificially impose a field-like torque with a sign opposite to the effect of the Oersted field, the result is a much slower and stochastic switching process that is reminiscent of the so-called incubation delay in conventional 2-terminal spin-torque-switched MTJs. △ Less

Submitted 1 February, 2017; v1 submitted 19 December, 2016; originally announced December 2016.

Comments: 5 pages, 4 figures, 1 table

Increased low-temperature dam** in yttrium iron garnet thin films

Authors: C. L. Jermain, S. V. Aradhya, J. T. Brangham, M. R. Page, N. D. Reynolds, P. C. Hammel, R. A. Buhrman, F. Y. Yang, D. C. Ralph

Abstract: We report measurements of the frequency and temperature dependence of ferromagnetic resonance (FMR) for a 15-nm-thick yttrium iron garnet (YIG) film grown by off-axis sputtering. Although the FMR linewidth is narrow at room temperature (corresponding to a dam** coefficient $α$ = (9.0 $\pm$ 0.2) $\times 10^{-4}$), comparable to previous results for high-quality YIG films of similar thickness, the… ▽ More We report measurements of the frequency and temperature dependence of ferromagnetic resonance (FMR) for a 15-nm-thick yttrium iron garnet (YIG) film grown by off-axis sputtering. Although the FMR linewidth is narrow at room temperature (corresponding to a dam** coefficient $α$ = (9.0 $\pm$ 0.2) $\times 10^{-4}$), comparable to previous results for high-quality YIG films of similar thickness, the linewidth increases strongly at low temperatures, by a factor of almost 30. This increase cannot be explained as due to two-magnon scattering from defects at the sample interfaces. We argue that the increased low-temperature linewidth is due to impurity relaxation mechanisms that have been investigated previously in bulk YIG samples. We suggest that the low-temperature linewidth is a useful figure of merit to guide the optimization of thin-film growth protocols because it is a particularly sensitive indicator of impurities. △ Less

Submitted 6 December, 2016; originally announced December 2016.

Comments: 14 pages, 5 figures

Journal ref: Phys. Rev. B 95, 174411 (2017)

Spin-Hall Torques Generated by Rare-Earth (Lanthanide) Thin Films

Authors: Neal Reynolds, Priyamvada Jadaun, John T. Heron, Colin L. Jermain, Jonathan Gibbons, Robyn Collette, R. A. Buhrman, D. G. Schlom, D. C. Ralph

Abstract: We report an initial experimental survey of spin-Hall torques generated by the rare-earth metals Gd, Dy, Ho, and Lu, along with comparisons to first-principles calculations of their spin Hall conductivities. Using spin torque ferromagnetic resonance (ST-FMR) measurements and DC-biased ST-FMR, we estimate lower bounds for the spin-Hall torque ratio, $ξ_{SH}$, of $\approx$ 0.04 for Gd, $\approx$ 0.0… ▽ More We report an initial experimental survey of spin-Hall torques generated by the rare-earth metals Gd, Dy, Ho, and Lu, along with comparisons to first-principles calculations of their spin Hall conductivities. Using spin torque ferromagnetic resonance (ST-FMR) measurements and DC-biased ST-FMR, we estimate lower bounds for the spin-Hall torque ratio, $ξ_{SH}$, of $\approx$ 0.04 for Gd, $\approx$ 0.05 for Dy, $\approx$ 0.14 for Ho, and $\approx$ 0.014 for Lu. The variations among these elements are qualitatively consistent with results from first principles (density functional theory, DFT, in the local density approximation with a Hubbard-U correction). The DFT calculations indicate that the spin Hall conductivity is enhanced by the presence of the partially-filled $f$ orbitals in Dy and Ho, which suggests a strategy to further strengthen the contribution of the $f$ orbitals to the spin Hall effect by shifting the electron chemical potential. △ Less

Submitted 6 December, 2016; originally announced December 2016.

Comments: 13 pages, 11 figures

Journal ref: Phys. Rev. B 95, 064412 (2017)

Low-dam** sub-10-nm thin films of lutetium iron garnet grown by molecular-beam epitaxy

Authors: C. L. Jermain, H. Paik, S. V. Aradhya, R. A. Buhrman, D. G. Schlom, D. C. Ralph

Abstract: We analyze the structural and magnetic characteristics of (111)-oriented lutetium iron garnet (Lu$_3$Fe$_5$O$_{12}$) films grown by molecular-beam epitaxy, for films as thin as 2.8 nm. Thickness-dependent measurements of the in- and out-of-plane ferromagnetic resonance allow us to quantify the effects of two-magnon scattering, along with the surface anisotropy and the saturation magnetization. We… ▽ More We analyze the structural and magnetic characteristics of (111)-oriented lutetium iron garnet (Lu$_3$Fe$_5$O$_{12}$) films grown by molecular-beam epitaxy, for films as thin as 2.8 nm. Thickness-dependent measurements of the in- and out-of-plane ferromagnetic resonance allow us to quantify the effects of two-magnon scattering, along with the surface anisotropy and the saturation magnetization. We achieve effective dam** coefficients of $11.1(9) \times 10^{-4}$ for 5.3 nm films and $32(3) \times 10^{-4}$ for 2.8 nm films, among the lowest values reported to date for any insulating ferrimagnetic sample of comparable thickness. △ Less

Submitted 15 September, 2016; originally announced September 2016.

Comments: 14 pages, 4 figures

On the origin of field-like spin-orbit torques in heavy metal-ferromagnet-oxide thin film heterostructures

Authors: Yongxi Ou, Chi-Feng Pai, Shengjie Shi, D. C. Ralph, R. A. Buhrman

Abstract: We report measurements of the thickness and temperature (T) dependencies of current-induced spin-orbit torques, especially the field-like (FL) component, in various heavy metal (HM)/normal metal (NM) spacer/ferromagnet (FM)/Oxide (MgO and HfOx/MgO) heterostructures. The FL torque in these samples originates from spin current generated by the spin Hall effect (SHE) in the HM. For a FM layer suffici… ▽ More We report measurements of the thickness and temperature (T) dependencies of current-induced spin-orbit torques, especially the field-like (FL) component, in various heavy metal (HM)/normal metal (NM) spacer/ferromagnet (FM)/Oxide (MgO and HfOx/MgO) heterostructures. The FL torque in these samples originates from spin current generated by the spin Hall effect (SHE) in the HM. For a FM layer sufficiently thin that a substantial portion of this spin current can reach the FM/Oxide interface, T-dependent spin scattering there can yield a strong FL torque that is, in some cases, opposite in sign to that exerted at the NM/FM interface. △ Less

Submitted 15 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. B 94, 140414 (2016)

Control of spin-orbit torques through crystal symmetry in WTe2/ferromagnet bilayers

Authors: D. MacNeill, G. M. Stiehl, M. H. D. Guimaraes, R. A. Buhrman, J. Park, D. C. Ralph

Abstract: Recent discoveries regarding current-induced spin-orbit torques produced by heavy-metal/ferromagnet and topological-insulator/ferromagnet bilayers provide the potential for dramatically-improved efficiency in the manipulation of magnetic devices. However, in experiments performed to date, spin-orbit torques have an important limitation -- the component of torque that can compensate magnetic dampin… ▽ More Recent discoveries regarding current-induced spin-orbit torques produced by heavy-metal/ferromagnet and topological-insulator/ferromagnet bilayers provide the potential for dramatically-improved efficiency in the manipulation of magnetic devices. However, in experiments performed to date, spin-orbit torques have an important limitation -- the component of torque that can compensate magnetic dam** is required by symmetry to lie within the device plane. This means that spin-orbit torques can drive the most current-efficient type of magnetic reversal (antidam** switching) only for magnetic devices with in-plane anisotropy, not the devices with perpendicular magnetic anisotropy that are needed for high-density applications. Here we show experimentally that this state of affairs is not fundamental, but rather one can change the allowed symmetries of spin-orbit torques in spin-source/ferromagnet bilayer devices by using a spin source material with low crystalline symmetry. We use WTe2, a transition-metal dichalcogenide whose surface crystal structure has only one mirror plane and no two-fold rotational invariance. Consistent with these symmetries, we generate an out-of-plane antidam** torque when current is applied along a low-symmetry axis of WTe2/Permalloy bilayers, but not when current is applied along a high-symmetry axis. Controlling S-O torques by crystal symmetries in multilayer samples provides a new strategy for optimizing future magnetic technologies. △ Less

Submitted 9 May, 2016; originally announced May 2016.

Nanosecond-timescale low error switching of in-plane magnetic tunnel junctions through dynamic Oersted-field assisted spin-Hall effect

Authors: Sriharsha V. Aradhya, Graham E. Rowlands, Junseok Oh, Daniel C. Ralph, Robert A. Buhrman

Abstract: We investigate fast-pulse switching of in-plane-magnetized magnetic tunnel junctions (MTJs) within 3-terminal devices in which spin-transfer torque is applied to the MTJ by the giant spin Hall effect. We measure reliable switching, with write error rates down to $10^{-5}$, using current pulses as short as just 2 ns in duration. This represents the fastest reliable switching reported to date for an… ▽ More We investigate fast-pulse switching of in-plane-magnetized magnetic tunnel junctions (MTJs) within 3-terminal devices in which spin-transfer torque is applied to the MTJ by the giant spin Hall effect. We measure reliable switching, with write error rates down to $10^{-5}$, using current pulses as short as just 2 ns in duration. This represents the fastest reliable switching reported to date for any spin-torque-driven magnetic memory geometry, and corresponds to a characteristic time scale that is significantly shorter than predicted possible within a macrospin model for in-plane MTJs subject to thermal fluctuations at room temperature. Using micromagnetic simulations, we show that in the 3-terminal spin-Hall devices the Oersted magnetic field generated by the pulse current strongly modifies the magnetic dynamics excited by the spin-Hall torque, enabling this unanticipated performance improvement. Our results suggest that in-plane MTJs controlled by Oersted-field-assisted spin-Hall torque are a promising candidate for both cache memory applications requiring high speed and for cryogenic memories requiring low write energies. △ Less

Submitted 21 June, 2016; v1 submitted 6 May, 2016; originally announced May 2016.

Comments: To appear in Nano Letters October 2016 print issue as cover article

Strong Spin Hall Effect in the Antiferromagnet PtMn

Authors: Yongxi Ou, Shengjie Shi, D. C. Ralph, R. A. Buhrman

Abstract: Effectively manipulating magnetism in ferromagnet (FM) thin film nanostructures with an in-plane current has become feasible since the determination of a 'giant' spin Hall effect (SHE) in certain heavy metal (HM)/FM system. Recently, both theoretical and experimental reports indicate that the non-collinear and collinear metallic antiferromagnet (AF) materials can have both a large anomalous Hall e… ▽ More Effectively manipulating magnetism in ferromagnet (FM) thin film nanostructures with an in-plane current has become feasible since the determination of a 'giant' spin Hall effect (SHE) in certain heavy metal (HM)/FM system. Recently, both theoretical and experimental reports indicate that the non-collinear and collinear metallic antiferromagnet (AF) materials can have both a large anomalous Hall effect (AHE) and a strong SHE. Here we report a systematic study of the SHE in PtMn with several PtMn/FM systems. By using interface engineering to reduce the 'spin memory loss' we obtain a spin torque efficiency as large as 0.24. This is more than twice the previously reported spin torque efficiency for PtMn. We also find that the apparent spin diffusion length in PtMn is surprisingly long (about 2.3nm). △ Less

Submitted 25 March, 2016; originally announced March 2016.

Comments: 30 pages, 7 figures, 1 Table

Journal ref: Phys. Rev. B 93, 220405 (2016)

Current Control of Magnetic Anisotropy via Stress in a Ferromagnetic Metal Waveguide

Authors: Kyongmo An, Xin Ma, Chi-Feng Pai, Jusang Yang, Kevin S. Olsson, James L. Erskine, Daniel C. Ralph, Robert A. Buhrman, Xiaoqin Li

Abstract: We demonstrate that in-plane charge current can effectively control the spin precession resonance in an Al2O3/CoFeB/Ta heterostructure. Brillouin Light Scattering (BLS) was used to detect the ferromagnetic resonance field under microwave excitation of spin waves at fixed frequencies. The current control of spin precession resonance originates from modification of the in-plane uniaxial magnetic ani… ▽ More We demonstrate that in-plane charge current can effectively control the spin precession resonance in an Al2O3/CoFeB/Ta heterostructure. Brillouin Light Scattering (BLS) was used to detect the ferromagnetic resonance field under microwave excitation of spin waves at fixed frequencies. The current control of spin precession resonance originates from modification of the in-plane uniaxial magnetic anisotropy field H_k, which changes symmetrically with respect to the current direction. Numerical simulation suggests that the anisotropic stress introduced by Joule heating plays an important role in controlling H_k. These results provide new insights into current manipulation of magnetic properties and have broad implications for spintronic devices. △ Less

Submitted 8 January, 2016; originally announced January 2016.

Journal ref: Phys. Rev. B 93, 140404 (2016)

Spin torque study of the spin Hall conductivity and spin diffusion length in platinum thin films with varying resistivity

Authors: Minh-Hai Nguyen, D. C. Ralph, R. A. Buhrman

Abstract: We report measurements of the spin torque efficiencies in perpendicularly-magnetized Pt/Co bilayers where the Pt resistivity $ρ_{Pt}$ is strongly dependent on thickness $t_{Pt}$ . The dam**-like spin Hall torque efficiency per unit current density, $ξ^j_{DL}$ , varies significantly with $t_{Pt}$, exhibiting a peak value $ξ^j_{DL}=0.12$ at $t_{Pt} = 2.8 - 3.9$ nm. In contrast, $ξ^j_{DL}/ρ_{Pt}$ i… ▽ More We report measurements of the spin torque efficiencies in perpendicularly-magnetized Pt/Co bilayers where the Pt resistivity $ρ_{Pt}$ is strongly dependent on thickness $t_{Pt}$ . The dam**-like spin Hall torque efficiency per unit current density, $ξ^j_{DL}$ , varies significantly with $t_{Pt}$, exhibiting a peak value $ξ^j_{DL}=0.12$ at $t_{Pt} = 2.8 - 3.9$ nm. In contrast, $ξ^j_{DL}/ρ_{Pt}$ increases monotonically with $t_{Pt}$ and saturates for $t_{Pt} > 5$ nm, consistent with an intrinsic spin Hall effect mechanism, in which $ξ^j_{DL}$ is enhanced by an increase in $ρ_{Pt}$ . Assuming the Elliott-Yafet spin scattering mechanism dominates we estimate that the spin diffusion length $λ_s = (0.77 \pm 0.08) \times 10^{-15} Ωm^2 /ρ_{Pt}$. △ Less

Submitted 21 December, 2015; originally announced December 2015.

Comments: Submitted to PRL

Journal ref: Phys. Rev. Lett. 116, 126601 (2016)

Thickness-Dependent Magnetoelasticity and its Effects on Perpendicular Magnetic Anisotropy in Ta|CoFeB|MgO Thin Films

Authors: Praveen G. Gowtham, Gregory M. Stiehl, Daniel C. Ralph, Robert A. Buhrman

Abstract: We report measurements of the in-plane magnetoelastic coupling in ultra-thin Ta|CoFeB|MgO layers as a function of uniaxial strain, conducted using a four-point bending apparatus. For annealed samples, we observe a strong dependence on the thickness of the CoFeB layer in the range 1.3-2.0 nm, which can be modeled as arising from a combination of effective surface and volume contributions to the mag… ▽ More We report measurements of the in-plane magnetoelastic coupling in ultra-thin Ta|CoFeB|MgO layers as a function of uniaxial strain, conducted using a four-point bending apparatus. For annealed samples, we observe a strong dependence on the thickness of the CoFeB layer in the range 1.3-2.0 nm, which can be modeled as arising from a combination of effective surface and volume contributions to the magnetoelastic coupling. We point out that if similar thickness dependence exists for magnetoelastic coupling in response to biaxial strain, then the standard Néel model for the magnetic anisotropy energy acquires a term inversely proportional to the magnetic layer thickness. This contribution can significantly change the overall magnetic anisotropy, and provides a natural explanation for the strongly nonlinear dependence of magnetic anisotropy energy on magnetic layer thickness that is commonly observed for ultrathin annealed CoFeB|MgO films with perpendicular magnetic anisotropy. △ Less

Submitted 14 September, 2015; originally announced September 2015.

Comments: 18 pages + 4 figures (Main text), 5 pages + 1 Figure (Supplementary)

A Critical Analysis of the Feasibility of Pure Strain-Actuated Giant Magnetostrictive Nanoscale Memories

Authors: Praveen G. Gowtham, Graham E. Rowlands, Robert A. Buhrman

Abstract: Concepts for memories based on the manipulation of giant magnetostrictive nanomagnets by stress pulses have garnered recent attention due to their potential for ultra-low energy operation in the high storage density limit. Here we discuss the feasibility of making such memories in light of the fact that the Gilbert dam** of such materials is typically quite high. We report the results of numeric… ▽ More Concepts for memories based on the manipulation of giant magnetostrictive nanomagnets by stress pulses have garnered recent attention due to their potential for ultra-low energy operation in the high storage density limit. Here we discuss the feasibility of making such memories in light of the fact that the Gilbert dam** of such materials is typically quite high. We report the results of numerical simulations for several classes of toggle precessional and non-toggle dissipative magnetoelastic switching modes. Material candidates for each of the several classes are analyzed and forms for the anisotropy energy density and ranges of material parameters appropriate for each material class are employed. Our study indicates that the Gilbert dam** as well as the anisotropy and demagnetization energies are all crucial for determining the feasibility of magnetoelastic toggle-mode precessional switching schemes. The roles of thermal stability and thermal fluctuations for stress-pulse switching of giant magnetostrictive nanomagnets are also discussed in detail and are shown to be important in the viability, design, and footprint of magnetostrictive switching schemes. △ Less

Submitted 6 October, 2015; v1 submitted 3 August, 2015; originally announced August 2015.

Comments: 30 pages main text + 11 figures

Journal ref: J. Appl. Phys. 118, 183903 (2015)

Traveling surface spin-wave resonance spectroscopy using surface acoustic waves

Authors: Praveen G. Gowtham, Takahiro Moriyama, Daniel C. Ralph, Robert A. Buhrman

Abstract: Coherent gigahertz-frequency surface acoustic waves (SAWs) traveling on the surface of a piezoelectric crystal can, via the magnetoelastic interaction, resonantly excite traveling spin waves in an adjacent thin-film ferromagnet. These excited spin waves, traveling with a definite in-plane wave-vector q enforced by the SAW, can be detected by measuring changes in the electro-acoustical transmission… ▽ More Coherent gigahertz-frequency surface acoustic waves (SAWs) traveling on the surface of a piezoelectric crystal can, via the magnetoelastic interaction, resonantly excite traveling spin waves in an adjacent thin-film ferromagnet. These excited spin waves, traveling with a definite in-plane wave-vector q enforced by the SAW, can be detected by measuring changes in the electro-acoustical transmission of a SAW delay line. Here, we provide a first demonstration that such measurements constitute a precise and quantitative technique for spin-wave spectroscopy, providing a means to determine both isotropic and anisotropic contributions to the spin-wave dispersion and dam**. We demonstrate the effectiveness of this spectroscopic technique by measuring the spin-wave properties of a Ni thin film for a large range of wave vectors,q = 2.5 x 10^4 - 8 x 10^4 cm^(-1), over which anisotropic dipolar interactions vary from being negligible to quite significant. △ Less

Submitted 9 March, 2016; v1 submitted 9 June, 2015; originally announced June 2015.

Comments: 29 pages with 8 figures

Journal ref: J. Appl. Phys. 118, 233910 (2015)

GPU-accelerated micromagnetic simulations using cloud computing

Authors: C. L. Jermain, G. E. Rowlands, R. A. Buhrman, D. C. Ralph

Abstract: Highly-parallel graphics processing units (GPUs) can improve the speed of micromagnetic simulations significantly as compared to conventional computing using central processing units (CPUs). We present a strategy for performing GPU-accelerated micromagnetic simulations by utilizing cost-effective GPU access offered by cloud computing services with an open-source Python-based program for running th… ▽ More Highly-parallel graphics processing units (GPUs) can improve the speed of micromagnetic simulations significantly as compared to conventional computing using central processing units (CPUs). We present a strategy for performing GPU-accelerated micromagnetic simulations by utilizing cost-effective GPU access offered by cloud computing services with an open-source Python-based program for running the MuMax3 micromagnetics code remotely. We analyze the scaling and cost benefits of using cloud computing for micromagnetics. △ Less

Submitted 5 May, 2015; originally announced May 2015.

Comments: 7 pages, 3 figures

Enhancement of the Anti-Dam** Spin Torque Efficacy of Platinum by Interface Modification

Authors: Minh-Hai Nguyen, Chi-Feng Pai, Kayla X. Nguyen, David A. Muller, Daniel C. Ralph, Robert A. Buhrman

Abstract: We report a strong enhancement of the efficacy of the spin Hall effect (SHE) of Pt for exerting anti-dam** spin torque on an adjacent ferromagnetic layer by the insertion of $\approx$ 0.5 nm layer of Hf between a Pt film and a thin, < 2 nm, Fe$_{60}$Co$_{20}$B$_{20}$ ferromagnetic layer. This enhancement is quantified by measurement of the switching current density when the ferromagnetic layer i… ▽ More We report a strong enhancement of the efficacy of the spin Hall effect (SHE) of Pt for exerting anti-dam** spin torque on an adjacent ferromagnetic layer by the insertion of $\approx$ 0.5 nm layer of Hf between a Pt film and a thin, < 2 nm, Fe$_{60}$Co$_{20}$B$_{20}$ ferromagnetic layer. This enhancement is quantified by measurement of the switching current density when the ferromagnetic layer is the free electrode in a magnetic tunnel junction. The results are explained as the suppression of spin pum** through a substantial decrease in the effective spin-mixing conductance of the interface, but without a concomitant reduction of the ferromagnet\' s absorption of the SHE generated spin current. △ Less

Submitted 10 April, 2015; originally announced April 2015.

Comments: Main text and Supplementary material

Journal ref: Appl. Phys. Lett. 106, 222402 (2015)

Dependence of the Efficiency of Spin Hall Torque on the Transparency of Pt-Ferromagnetic Layer Interfaces

Authors: Chi-Feng Pai, Yongxi Ou, D. C. Ralph, R. A. Buhrman

Abstract: We report that spin current transport across Pt-ferromagnet (FM) interfaces is strongly dependent on the type and the thickness of the FM layer and on post-deposition processing protocols. By employing both harmonic voltage measurements and spin-torque ferromagnetic resonance measurements, we find that the efficiency of the Pt spin Hall effect in exerting a dam**-like spin torque on the FM range… ▽ More We report that spin current transport across Pt-ferromagnet (FM) interfaces is strongly dependent on the type and the thickness of the FM layer and on post-deposition processing protocols. By employing both harmonic voltage measurements and spin-torque ferromagnetic resonance measurements, we find that the efficiency of the Pt spin Hall effect in exerting a dam**-like spin torque on the FM ranges from < 0.05 to > 0.10 under different interfacial conditions. We also show that the temperature dependence of the spin torque efficiencies for both the dam**-like torque and field-like torque is dependent upon the details of the Pt-FM interface. The "internal" spin Hall angle of the Pt thin films used in this study, after taking the interfacial spin transmission factor into account, is estimated to be ~ 0.20. This suggests that a careful engineering of Pt-FM interfaces can improve the spin-Hall-torque efficiency of Pt-based spintronic devices. △ Less

Submitted 12 November, 2014; originally announced November 2014.

Journal ref: Phys. Rev. B 92, 064426 (2015)