Showing 1–50 of 77 results for author: Buhmann, H

Overlap** Top Gate Electrodes based on Low Temperature Atomic Layer Deposition for Nanoscale Ambipolar Lateral Junctions

Authors: Christopher Fuchs, Lena Fürst, Hartmut Buhmann, Johannes Kleinlein, Laurens W. Molenkamp

Abstract: We present overlap** top gate electrodes for the formation of gate defined lateral junctions in semiconducting layers as an alternative to the back gate/top gate combination and to the split gate configuration. The optical lithography microfabrication of the overlap** top gates is based on multiple layers of low-temperature atomic layer deposited hafnium oxide, which acts as a gate dielectric… ▽ More We present overlap** top gate electrodes for the formation of gate defined lateral junctions in semiconducting layers as an alternative to the back gate/top gate combination and to the split gate configuration. The optical lithography microfabrication of the overlap** top gates is based on multiple layers of low-temperature atomic layer deposited hafnium oxide, which acts as a gate dielectric and as a robust insulating layer between two overlap** gate electrodes exhibiting a large dielectric breakdown field of > 1E9 V/m. The advantage of overlap** gates over the split gate approach is confirmed in model calculations of the electrostatics of the gate stack. The overlap** gate process is applied to Hall bar devices of mercury telluride in order to study the interaction of different quantum Hall states in the nn', np, pn and pp' regime. △ Less

Submitted 10 April, 2024; originally announced April 2024.

Comments: 7 pages, 3 figures

Spectral asymmetry induces a re-entrant quantum Hall effect in a topological insulator

Authors: Li-Xian Wang, Wouter Beugeling, Fabian Schmitt, Lukas Lunczer, Julian-Benedikt Mayer, Hartmut Buhmann, Ewelina M. Hankiewicz, Laurens W. Molenkamp

Abstract: The band inversion of topological materials in three spatial dimensions is intimately connected to the parity anomaly of two-dimensional massless Dirac fermions. At finite magnetic fields, the parity anomaly reveals itself as a non-zero spectral asymmetry, i.e., a non-zero difference between the number of conduction and valence band Landau levels, due to the unpaired zero Landau level. Here, we re… ▽ More The band inversion of topological materials in three spatial dimensions is intimately connected to the parity anomaly of two-dimensional massless Dirac fermions. At finite magnetic fields, the parity anomaly reveals itself as a non-zero spectral asymmetry, i.e., a non-zero difference between the number of conduction and valence band Landau levels, due to the unpaired zero Landau level. Here, we realize this two-dimensional Dirac physics at a single surface of the three-dimensional topological insulator (Hg,Mn)Te. We observe an unconventional re-entrant quantum Hall effect that can be directly related to the occurrence of spectral asymmetry in a single topological surface state. The effect should be observable in any topological insulator where the transport is dominated by a single Dirac surface state. △ Less

Submitted 8 February, 2024; originally announced February 2024.

Comments: 13 pages, 10 figures, originally submitted version, includes supplementary material

Nonlinear planar magnetotransport due to tilted Dirac cones in topological materials

Authors: Arya Thenapparambil, Graciely Elias dos Santos, Chang-An Li, Mohamed Abdelghany, Wouter Beugeling, Hartmut Buhmann, Charles Gould, Song-Bo Zhang, Björn Trauzettel, Laurens W. Molenkamp

Abstract: Nonlinear planar magnetotransport is ubiquitous in topological HgTe structures, both in tensile (topological insulator) or compressively strained layers (Weyl semimetal phase). We show that the common reason for the nonlinear planar magnetotransport is the presence of tilted Dirac cones combined with the formation of charge puddles. The origin of the tilted Dirac cones is the mix of the Zeeman ter… ▽ More Nonlinear planar magnetotransport is ubiquitous in topological HgTe structures, both in tensile (topological insulator) or compressively strained layers (Weyl semimetal phase). We show that the common reason for the nonlinear planar magnetotransport is the presence of tilted Dirac cones combined with the formation of charge puddles. The origin of the tilted Dirac cones is the mix of the Zeeman term due to the in-plane magnetic field and quadratic contributions to the dispersion relation. We develop a network model that mimics transport of tilted Dirac fermions in the landscape of charge puddles. The model captures the essential features of the experimental data. It should be relevant for nonlinear planar magnetotransport in a variety of topological and small band gap materials. △ Less

Submitted 17 July, 2023; originally announced July 2023.

Comments: 12 pages, 11 figures, 1 table

Journal ref: Nano Letters 2023, 23, 15, 6914-6919

Velocity and confinement of edge plasmons in HgTe-based 2D topological insulators

Authors: Alexandre Gourmelon, Elric Frigerio, Hiroshi Kamata, Lukas Lunczer, Anne Denis, Pascal Morfin, Michael Rosticher, Jean-Marc Berroir, Gwendal Fève, Bernard Plaçais, Hartmut Buhmann, Laurens W. Molenkamp, Erwann Bocquillon

Abstract: High-frequency transport in the edge states of the quantum spin Hall (QSH) effect has to date rarely been explored, though it could cast light on the scattering mechanisms taking place therein. We here report on the measurement of the plasmon velocity in topological HgTe quantum wells both in the QSH and quantum Hall (QH) regimes, using harmonic GHz excitations and phase-resolved detection. We obs… ▽ More High-frequency transport in the edge states of the quantum spin Hall (QSH) effect has to date rarely been explored, though it could cast light on the scattering mechanisms taking place therein. We here report on the measurement of the plasmon velocity in topological HgTe quantum wells both in the QSH and quantum Hall (QH) regimes, using harmonic GHz excitations and phase-resolved detection. We observe low plasmon velocities corresponding to large transverse widths, which we ascribe to the prominent influence of charge puddles forming in the vicinity of edge channels. Together with other recent works, it suggests that puddles play an essential role in the edge state physics and probably constitute a main hurdle on the way to clean and robust edge transport. △ Less

Submitted 22 February, 2023; originally announced February 2023.

Comments: 8 pages, 6 figures, + supplementary material

Topological band inversion in HgTe(001): surface and bulk signatures from photoemission

Authors: Raphael C. Vidal, Giovanni Marini, Lukas Lunczer, Simon Moser, Lena Fürst, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Charles Gould, Hartmut Buhmann, Wouter Beugeling, Giorgio Sangiovanni, Domenico Di Sante, Gianni Profeta, Laurens W. Molenkamp, Hendrik Bentmann, Friedrich Reinert

Abstract: HgTe is a versatile topological material and has enabled the realization of a variety of topological states, including two- and three-dimensional (3D) topological insulators and topological semimetals. Nevertheless, a quantitative understanding of its electronic structure remains challenging, in particular due to coupling of the Te 5p-derived valence electrons to Hg 5d core states at shallow bindi… ▽ More HgTe is a versatile topological material and has enabled the realization of a variety of topological states, including two- and three-dimensional (3D) topological insulators and topological semimetals. Nevertheless, a quantitative understanding of its electronic structure remains challenging, in particular due to coupling of the Te 5p-derived valence electrons to Hg 5d core states at shallow binding energy. We present a joint experimental and theoretical study of the electronic structure in strained HgTe(001) films in the 3D topological-insulator regime, based on angle-resolved photoelectron spectroscopy and density functional theory. The results establish detailed agreement in terms of (i) electronic band dispersions and orbital symmetries, (ii) surface and bulk contributions to the electronic structure, and (iii) the importance of Hg 5d states in the valence-band formation. Supported by theory, our experiments directly image the paradigmatic band inversion in HgTe, underlying its non-trivial band topology. △ Less

Submitted 11 December, 2022; originally announced December 2022.

Counterpropagating topological and quantum Hall edge channels

Authors: Saquib Shamim, Pragya Shekhar, Wouter Beugeling, Jan Böttcher, Andreas Budewitz, Julian-Benedikt Mayer, Lukas Lunczer, Ewelina M. Hankiewicz, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: The survival of the quantum spin Hall edge channels in presence of an external magnetic field has been a subject of experimental and theoretical research. The inversion of Landau levels that accommodates the quantum spin Hall effect is destroyed at a critical magnetic field, and a trivial insulating gap appears in the spectrum for stronger fields. In this work, we report the absence of this transp… ▽ More The survival of the quantum spin Hall edge channels in presence of an external magnetic field has been a subject of experimental and theoretical research. The inversion of Landau levels that accommodates the quantum spin Hall effect is destroyed at a critical magnetic field, and a trivial insulating gap appears in the spectrum for stronger fields. In this work, we report the absence of this transport gap in disordered two dimensional topological insulators in perpendicular magnetic fields of up to 16 T. Instead, we observe that a topological edge channel (from band inversion) coexists with a counterpropagating quantum Hall edge channel for magnetic fields at which the transition to the insulating regime is expected. For larger fields, we observe only the quantum Hall edge channel with transverse resistance close to $h/e^2$. By tuning the disorder using different fabrication processes, we find evidence that this unexpected $ν=1$ plateau originates from extended quantum Hall edge channels along a continuous network of charge puddles at the edges of the device. △ Less

Submitted 13 May, 2022; v1 submitted 11 March, 2022; originally announced March 2022.

Comments: 8+3 pages, 5+2 figures

Journal ref: Nature Communications volume 13, Article number: 2682 (2022)

Massive and topological surface states in tensile strained HgTe

Authors: David M. Mahler, Valentin L. Müller, Cornelius Thienel, Jonas Wiedenmann, Wouter Beugeling, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: Magneto-transport measurements on gated high mobility heterostructures containing a 60 nm layer of tensile strained HgTe, a three-dimensional topological insulator, show well-developed Hall quantization from surface states both in the n- as well as in the p-type regime. While the n-type behavior is due to transport in the topological surface state of the material, we find from 8-orbital k.p calcul… ▽ More Magneto-transport measurements on gated high mobility heterostructures containing a 60 nm layer of tensile strained HgTe, a three-dimensional topological insulator, show well-developed Hall quantization from surface states both in the n- as well as in the p-type regime. While the n-type behavior is due to transport in the topological surface state of the material, we find from 8-orbital k.p calculations that the p-type transport results from massive Volkov-Pankratov states. Their formation prevents the Dirac point and thus the p-conducting topological surface state from being accessible in transport experiments. This interpretation is supported by low-field magneto-transport experiments demonstrating the coexistence of n-conducting topological surface states and p-conducting Volkov-Pankratov states at the relevant gate voltages. △ Less

Submitted 23 November, 2021; originally announced November 2021.

Comments: 15+5 pages, 5 figures; initially submitted version

Electron-hole scattering limited transport of Dirac fermions in a topological insulator

Authors: Valentin L. Müller, Yuan Yan, Oleksiy Kashuba, Björn Trauzettel, Mohamed Abdelghany, Johannes Kleinlein, Wouter Beugeling, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: We experimentally investigate the effect of electron temperature on transport in the two-dimensional Dirac surface states of the three-dimensional topological insulator HgTe. We find that around the minimal conductivity point, where both electrons and holes are present, heating the carriers with a DC current results in a non-monotonic differential resistance of narrow channels. We show that the ob… ▽ More We experimentally investigate the effect of electron temperature on transport in the two-dimensional Dirac surface states of the three-dimensional topological insulator HgTe. We find that around the minimal conductivity point, where both electrons and holes are present, heating the carriers with a DC current results in a non-monotonic differential resistance of narrow channels. We show that the observed initial increase in resistance can be attributed to electron-hole scattering, while the decrease follows naturally from the change in Fermi energy of the charge carriers. Both effects are governed dominantly by a van Hove singularity in the bulk valence band. The results demonstrate the importance of interband electron-hole scattering in the transport properties of topological insulators. △ Less

Submitted 7 June, 2021; originally announced June 2021.

Emergent quantum Hall effects below $50$ mT in a two-dimensional topological insulator

Authors: Saquib Shamim, Wouter Beugeling, Jan Böttcher, Pragya Shekhar, Andreas Budewitz, Philipp Leubner, Lukas Lunczer, Ewelina M. Hankiewicz, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: The realization of the quantum spin Hall effect in HgTe quantum wells has led to the development of topological materials which, in combination with magnetism and superconductivity, are predicted to host chiral Majorana fermions. However, the large magnetization ($\sim$ a few tesla) in conventional quantum anomalous Hall system, makes it challenging to induce superconductivity. Here, we report two… ▽ More The realization of the quantum spin Hall effect in HgTe quantum wells has led to the development of topological materials which, in combination with magnetism and superconductivity, are predicted to host chiral Majorana fermions. However, the large magnetization ($\sim$ a few tesla) in conventional quantum anomalous Hall system, makes it challenging to induce superconductivity. Here, we report two different emergent quantum Hall effects in HgTe quantum wells dilutely alloyed with Mn. Firstly, a novel quantum Hall state emerges from the quantum spin Hall state at an exceptionally low magnetic field of $\sim 50$ mT. Secondly, tuning towards the bulk $p$-regime, we resolve multiple quantum Hall plateaus at fields as low as $20 - 30$ mT, where transport is dominated by a van Hove singularity in the valence band. These emergent quantum Hall phenomena rely critically on the topological band structure of HgTe and their occurrence at very low fields make them an ideal candidate for interfacing with superconductors to realize chiral Majorana fermions. △ Less

Submitted 31 March, 2020; originally announced April 2020.

Journal ref: Sci. Adv. 6, eaba4625 (2020)

Interplay of Dirac nodes and Volkov-Pankratov surface states in compressively strained HgTe

Authors: David M. Mahler, Julian-Benedikt Mayer, Philipp Leubner, Lukas Lunczer, Domenico Di Sante, Giorgio Sangiovanni, Ronny Thomale, Ewelina M. Hankiewicz, Hartmut Buhmann, Charles Gould, Laurens W. Molenkamp

Abstract: Preceded by the discovery of topological insulators, Dirac and Weyl semimetals have become a pivotal direction of research in contemporary condensed matter physics. While easily accessible from a theoretical viewpoint, these topological semimetals pose a serious challenge in terms of experimental synthesis and analysis to allow for their unambiguous identification. In this work, we report on detai… ▽ More Preceded by the discovery of topological insulators, Dirac and Weyl semimetals have become a pivotal direction of research in contemporary condensed matter physics. While easily accessible from a theoretical viewpoint, these topological semimetals pose a serious challenge in terms of experimental synthesis and analysis to allow for their unambiguous identification. In this work, we report on detailed transport experiments on compressively strained HgTe. Due to the superior sample quality in comparison to other topological semimetallic materials, this enables us to resolve the interplay of topological surface states and semimetallic bulk states to an unprecedented degree of precision and complexity. As our gate design allows us to precisely tune the Fermi level at the Weyl and Dirac points, we identify a magnetotransport regime dominated by Weyl/Dirac bulk state conduction for small carrier densities and by topological surface state conduction for larger carrier densities. As such, similar to topological insulators, HgTe provides the archetypical reference for the experimental investigation of topological semimetals. △ Less

Submitted 4 May, 2020; v1 submitted 25 July, 2019; originally announced July 2019.

Comments: 8 pages, 7 figures, accepted in PRX, added kp calculation and supplementary

Journal ref: Phys. Rev. X 9, 031034 (2019)

Proximity Induced Superconductivity in CdTe-HgTe Core-Shell Nanowires

Authors: Jan Hajer, Maximilian Kessel, Christoph Brüne, Martin P. Stehno, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: In this letter we report on proximity superconductivity induced in CdTe-HgTe core-shell nanowires, a quasi-one-dimensional heterostructure of the topological insulator HgTe. We demonstrate a Josephson supercurrent in our nanowires contacted with superconducting Al leads. The observation of a sizable $I_c R_n$ product, a positive excess current and multiple Andreev reflections up to fourth order fu… ▽ More In this letter we report on proximity superconductivity induced in CdTe-HgTe core-shell nanowires, a quasi-one-dimensional heterostructure of the topological insulator HgTe. We demonstrate a Josephson supercurrent in our nanowires contacted with superconducting Al leads. The observation of a sizable $I_c R_n$ product, a positive excess current and multiple Andreev reflections up to fourth order further indicate a high interface quality of the junctions. △ Less

Submitted 23 May, 2019; originally announced May 2019.

Comments: Accepted for publication in Nano Letters

Interacting topological edge channels

Authors: Jonas Strunz, Jonas Wiedenmann, Christoph Fleckenstein, Lukas Lunczer, Wouter Beugeling, Valentin L. Müller, Pragya Shekhar, Niccoló Traverso Ziani, Saquib Shamim, Johannes Kleinlein, Hartmut Buhmann, Björn Trauzettel, Laurens W. Molenkamp

Abstract: Electrical currents in a quantum spin Hall insulator are confined to the boundary of the system. The charge carriers can be described as massless relativistic particles, whose spin and momentum are coupled to each other. While the helical character of those states is by now well established experimentally, it is a fundamental open question how those edge states interact with each other when brough… ▽ More Electrical currents in a quantum spin Hall insulator are confined to the boundary of the system. The charge carriers can be described as massless relativistic particles, whose spin and momentum are coupled to each other. While the helical character of those states is by now well established experimentally, it is a fundamental open question how those edge states interact with each other when brought in spatial proximity. We employ a topological quantum point contact to guide edge channels from opposite sides into a quasi-one-dimensional constriction, based on inverted HgTe quantum wells. Apart from the expected quantization in integer steps of $2 e^2/h$, we find a surprising additional plateau at $e^2/h$. We explain our observation by combining band structure calculations and repulsive electron-electron interaction effects captured within the Tomonaga-Luttinger liquid model. The present results may have direct implications for the study of one-dimensional helical electron quantum optics, Majorana- and potentially para-fermions. △ Less

Submitted 20 May, 2019; originally announced May 2019.

Journal ref: Nat. Phys. 16, 83-88 (2020)

How to measure the entropy of a mesoscopic system via thermoelectric transport

Authors: Yaakov Kleeorin, Holger Thierschmann, Hartmut Buhmann, Antoine Georges, Laurens W. Molenkamp, Yigal Meir

Abstract: Entropy is a fundamental thermodynamic quantity indicative of the accessible degrees of freedom in a system. While it has been suggested that the entropy of a mesoscopic system can yield nontrivial information on emergence of exotic states, its measurement in such small electron-number system is a daunting task. Here we propose a method to extract the entropy of a Coulomb-blockaded mesoscopic syst… ▽ More Entropy is a fundamental thermodynamic quantity indicative of the accessible degrees of freedom in a system. While it has been suggested that the entropy of a mesoscopic system can yield nontrivial information on emergence of exotic states, its measurement in such small electron-number system is a daunting task. Here we propose a method to extract the entropy of a Coulomb-blockaded mesoscopic system from transport measurements. We prove analytically and demonstrate numerically the applicability of the method to such a mesoscopic system of arbitrary spectrum and degeneracies. We then apply our procedure to measurements of thermoelectric response of a single quantum dot, and demonstrate how it can be used to deduce the entropy change across Coulomb-blockade valleys, resolving, along the way, a long-standing puzzle of the experimentally observed finite thermoelectric response at the apparent particle-hole symmetric point. △ Less

Submitted 21 January, 2020; v1 submitted 18 April, 2019; originally announced April 2019.

Comments: Final Version, merged

Journal ref: Nature Communications 10, 5801 (2019)

Dynamical separation of bulk and edge transport in HgTe-based 2D topological insulators

Authors: Matthieu C. Dartiailh, Simon Hartinger, Alexandre Gourmelon, Kalle Bendias, Hugo Bartolomei, Hiroshi Kamata, Jean-Marc Berroir, Gwendal Fève, Bernard Plaçais, Lukas Lunczer, Raimund Schlereth, Hartmut Buhmann, Laurens W. Molenkamp, Erwann Bocquillon

Abstract: Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge states with respect to bulk carriers. Our work on microwave spectroscopy highlights the responses of the edges which host very mobile carriers, while bulk carrier… ▽ More Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge states with respect to bulk carriers. Our work on microwave spectroscopy highlights the responses of the edges which host very mobile carriers, while bulk carriers are drastically slowed down in the gap. Though the edges are denser than expected, we establish that charge relaxation occurs on short timescales, and suggests that edge states can be addressed selectively on timescales over which bulk carriers are frozen. △ Less

Submitted 8 July, 2019; v1 submitted 29 March, 2019; originally announced March 2019.

Comments: Main text (5 pages, 4 figures) + Supplementary Material

Journal ref: Phys. Rev. Lett. 124, 076802 (2020)

Residual strain in free-standing CdTe nanowires overgrown with HgTe

Authors: M. Kessel, L. Lunczer, N. V. Tarakina, C. Brüne, H. Buhmann, L. W. Molenkamp

Abstract: We investigate the crystal properties of CdTe nanowires overgrown with HgTe. Scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) confirm, that the growth results in a high ensemble uniformity and that the individual heterostructures are single-crystalline, respectively. We use high-resolution X-ray diffraction (HRXRD) to investigate strain, caused by the small l… ▽ More We investigate the crystal properties of CdTe nanowires overgrown with HgTe. Scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) confirm, that the growth results in a high ensemble uniformity and that the individual heterostructures are single-crystalline, respectively. We use high-resolution X-ray diffraction (HRXRD) to investigate strain, caused by the small lattice mismatch between the two materials. We find that both CdTe and HgTe show changes in lattice constant compared to the respective bulk lattice constants. The measurements reveal a complex strain pattern with signatures of both uniaxial and shear strains present in the overgrown nanowires. △ Less

Submitted 4 December, 2018; originally announced December 2018.

Microwave studies of the fractional Josephson effect in HgTe-based Josephson junctions

Authors: Erwann Bocquillon, Jonas Wiedenmann, Russell S. Deacon, Teunis M. Klapwijk, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: The rise of topological phases of matter is strongly connected to their potential to host Majorana bound states, a powerful ingredient in the search for a robust, topologically protected, quantum information processing. In order to produce such states, a method of choice is to induce superconductivity in topological insulators. The engineering of the interplay between superconductivity and the ele… ▽ More The rise of topological phases of matter is strongly connected to their potential to host Majorana bound states, a powerful ingredient in the search for a robust, topologically protected, quantum information processing. In order to produce such states, a method of choice is to induce superconductivity in topological insulators. The engineering of the interplay between superconductivity and the electronic properties of a topological insulator is a challenging task and it is consequently very important to understand the physics of simple superconducting devices such as Josephson junctions, in which new topological properties are expected to emerge. In this article, we review recent experiments investigating topological superconductivity in topological insulators, using microwave excitation and detection techniques. More precisely, we have fabricated and studied topological Josephson junctions made of HgTe weak links in contact with two Al or Nb contacts. In such devices, we have observed two signatures of the fractional Josephson effect, which is expected to emerge from topologically-protected gapless Andreev bound states. We first recall the theoretical background on topological Josephson junctions, then move to the experimental observations. Then, we assess the topological origin of the observed features and conclude with an outlook towards more advanced microwave spectroscopy experiments, currently under development. △ Less

Submitted 9 October, 2018; originally announced October 2018.

Comments: Lectures given at the San Sebastian Topological Matter School 2017, published in "Topological Matter. Springer Series in Solid-State Sciences, vol 190. Springer"

Magnetoresistance in the in-plane magnetic field induced semi-metallic phase of inverted HgTe quantum wells

Authors: T. Khouri, S. Pezzini, M. Bendias, P. Leubner, U. Zeitler, N. E. Hussey, H. Buhmann, L. W. Molenkamp, M. Titov, S. Wiedmann

Abstract: In this study we have measured the magnetoresistance response of inverted HgTe quantum wells in the presence of a large parallel magnetic field up to 33 T is applied. We show that in quantum wells with inverted band structure a monotonically decreasing magnetoresistance is observed when a magnetic field up to order 10 T is applied parallel to the quantum well plane. This feature is accompanied by… ▽ More In this study we have measured the magnetoresistance response of inverted HgTe quantum wells in the presence of a large parallel magnetic field up to 33 T is applied. We show that in quantum wells with inverted band structure a monotonically decreasing magnetoresistance is observed when a magnetic field up to order 10 T is applied parallel to the quantum well plane. This feature is accompanied by a vanishing of non-locality and is consistent with a predicted modification of the energy spectrum that becomes gapless at a critical in-plane field $B_{c}$. Magnetic fields in excess of $B_c$ allow us to investigate the evolution of the magnetoresistance in this field-induced semi-metallic region beyond the known regime. After an initial saturation phase in the presumably gapless phase, we observe a strong upturn of the longitudinal resistance. A small residual Hall signal picked up in non-local measurements suggests that this feature is likely a bulk phenomenon and caused by the semi-metallicity of the sample. Theoretical calculations indeed support that the origin of these features is classical and a power law upturn of the resistance can be expected due to the specifics of two-carrier transport in thin (semi-)metallic samples subjected to large magnetic fields. △ Less

Submitted 7 August, 2018; originally announced August 2018.

Journal ref: Phys. Rev. B 99, 075303 (2019)

Quantum anomalous Hall effect in Mn doped HgTe quantum wells

Authors: A. Budewitz, K. Bendias, P. Leubner, T. Khouri, S. Shamim, S. Wiedmann, H. Buhmann, L. W. Molenkamp

Abstract: Magnetotransport measurements are presented on paramagnetic (Hg,Mn)Te quantum wells (QWs) with an inverted band structure. Gate-voltage controlled density dependent measurements reveal an unusual behavior in the transition regime from n- to p-type conductance: A very small magnetic field of approximately 70 mT is sufficient to induce a transition into the nu = -1 quantum Hall state, which extends… ▽ More Magnetotransport measurements are presented on paramagnetic (Hg,Mn)Te quantum wells (QWs) with an inverted band structure. Gate-voltage controlled density dependent measurements reveal an unusual behavior in the transition regime from n- to p-type conductance: A very small magnetic field of approximately 70 mT is sufficient to induce a transition into the nu = -1 quantum Hall state, which extends up to at least 10 Tesla. The onset field value remains constant for a unexpectedly wide gate-voltage range. Based on temperature and angle-dependent magnetic field measurements we show that the unusual behavior results from the realization of the quantum anomalous Hall state in these magnetically doped QWs. △ Less

Submitted 19 June, 2017; originally announced June 2017.

Transport spectroscopy of induced superconductivity in the three-dimensional topological insulator HgTe

Authors: Jonas Wiedenmann, Eva Liebhaber, Johannes Kübert, Erwann Bocquillon, Pablo Burset, Christopher Ames, Hartmut Buhmann, Teun M. Klapwijk, Laurens W. Molenkamp

Abstract: The proximity-induced superconducting state in the 3-dimensional topological insulator HgTe has been studied using electronic transport of a normal metal-superconducting point contact as a spectroscopic tool (Andreev point contact spectroscopy). By analyzing the conductance as a function of voltage for various temperatures, magnetic fields and gate-voltages, we find evidence, in equilibrium, for a… ▽ More The proximity-induced superconducting state in the 3-dimensional topological insulator HgTe has been studied using electronic transport of a normal metal-superconducting point contact as a spectroscopic tool (Andreev point contact spectroscopy). By analyzing the conductance as a function of voltage for various temperatures, magnetic fields and gate-voltages, we find evidence, in equilibrium, for an induced order parameter in HgTe of $70\,μ$eV and a niobium order parameter of $1.1\,$meV. To understand the full conductance curve as a function of applied voltage we suggest a non-equilibrium driven transformation of the quantum transport process where the relevant scattering region and equilibrium reservoirs change with voltage. This implies that the spectroscopy probes the superconducting correlations at different positions in the sample, depending on the bias voltage. △ Less

Submitted 19 October, 2017; v1 submitted 6 June, 2017; originally announced June 2017.

Comments: Updated author list

Journal ref: Phys. Rev. B 96, 165302 (2017)

Observation of Volkov-Pankratov states in topological HgTe heterojunctions using high-frequency compressibility

Authors: A. Inhofer, S. Tchoumakov, B. A. Assaf, G. Fève, J. M. Berroir, V. Jouffrey, D. Carpentier, M. Goerbig, B. Plaçais, K. Bendias, D. M. Mahler, E. Bocquillon, R. Schlereth, C. Brüne, H. Buhmann, L. W. Molenkamp

Abstract: It is well established that topological insulators sustain Dirac fermion surface states as a consequence of band inversion in the bulk. These states have a helical spin polarization and a linear dispersion with large Fermi velocity. In this article we report on a set of experimental observations indicating the existence of massive surface states. These states are confined at the interface and domi… ▽ More It is well established that topological insulators sustain Dirac fermion surface states as a consequence of band inversion in the bulk. These states have a helical spin polarization and a linear dispersion with large Fermi velocity. In this article we report on a set of experimental observations indicating the existence of massive surface states. These states are confined at the interface and dominate equilibrium and transport properties at high energy and/or high electric field. By monitoring the AC admittance of HgTe topological insulator field-effect capacitors, we access the compressibility and conductivity of surface states in a broad range of energy and electric fields. The Dirac surface states are characterized by a compressibility minimum, a linear energy dependence and a high mobility persisting up to energies much larger than the transport bandgap of the bulk. New features are revealed at high energies with signatures such as conductance peaks, compressibility bumps, a strong charge metastability and a Hall resistance anomaly. These features point to the existence of excited massive surface states, responsible for a strong intersubband scattering with the Dirac states and the nucleation of metastable bulk carriers. The spectrum of excited states agrees with predictions of a phenomenological model of the topological-trivial semiconductor interface. The model accounts for the finite interface depth and the effect of electric fields. The existence of excited topological states is essential for the understanding of topological phases and opens a route for engineering and exploiting topological resources in quantum technology. △ Less

Submitted 17 March, 2020; v1 submitted 13 April, 2017; originally announced April 2017.

Comments: 29 pages, 8 figures

Journal ref: Phys. Rev. B 96, 195104 (2017)

CdTe-HgTe core-shell nanowire growth controlled by RHEED

Authors: M. Kessel, J. Hajer, G. Karczewski, C. Schumacher, C. Brüne, H. Buhmann, L. W. Molenkamp

Abstract: We present results on the growth of CdTe-HgTe core-shell nanowires, a realization of a quasi one-dimensional heterostructure of the topological insulator HgTe. The growth is a two step process consisting of the growth of single crystalline zinc blende CdTe nanowires with the vapor-liquid-solid method and the overgrowth of these wires with HgTe such that a closed shell is formed around the CdTe cor… ▽ More We present results on the growth of CdTe-HgTe core-shell nanowires, a realization of a quasi one-dimensional heterostructure of the topological insulator HgTe. The growth is a two step process consisting of the growth of single crystalline zinc blende CdTe nanowires with the vapor-liquid-solid method and the overgrowth of these wires with HgTe such that a closed shell is formed around the CdTe core structure. The CdTe wire growth is monitored by RHEED allowing us to infer information on the crystal properties from the electron diffraction pattern. This information is used to find and control the optimal growth temperature. High quality single crystal CdTe nanowires grow with a preferred orientation. For the growth of the conductive HgTe shell structure we find that the supplied Hg:Te ratio is the crucial parameter to facilitate growth on all surface facets. △ Less

Submitted 27 March, 2017; originally announced March 2017.

Journal ref: Phys. Rev. Materials 1, 023401 (2017)

Interplay of chiral and helical states in a Quantum Spin Hall Insulator lateral junction

Authors: M. R. Calvo, F. de Juan, R. Ilan, E. J. Fox, A. J. Bestwick, M. Mühlbauer, J. Wang, C. Ames, P. Leubner, C. Brüne, S. C. Zhang, H. Buhmann, L. W. Molenkamp, D. Goldhaber-Gordon

Abstract: We study the electronic transport across an electrostatically-gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without applied magnetic field. We control carrier density inside and outside a junction region independently and hence tune the number and nature of 1D edge modes propagating in each of those regions. Outside the 2D gap, magnetic field drives… ▽ More We study the electronic transport across an electrostatically-gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without applied magnetic field. We control carrier density inside and outside a junction region independently and hence tune the number and nature of 1D edge modes propagating in each of those regions. Outside the 2D gap, magnetic field drives the system to the quantum Hall regime, and chiral states propagate at the edge. In this regime, we observe fractional plateaus which reflect the equilibration between 1D chiral modes across the junction. As carrier density approaches zero in the central region and at moderate fields, we observe oscillations in resistance that we attribute to Fabry-Perot interference in the helical states, enabled by the broken time reversal symmetry. At higher fields, those oscillations disappear, in agreement with the expected absence of helical states when band inversion is lifted. △ Less

Submitted 13 December, 2017; v1 submitted 27 February, 2017; originally announced February 2017.

Comments: 5 pages, 4 figures, supp. mat

Journal ref: Phys. Rev. Lett. 119, 226401 (2017)

Anisotropic and strong negative magneto-resistance in the three-dimensional topological insulator Bi2Se3

Authors: S. Wiedmann, A. Jost, B. Fauque, J. van Dijk, M. J. Meijer, T. Khouri, S. Pezzini, S. Grauer, S. Schreyeck, C. Brune, H. Buhmann, L. W. Molenkamp, N. E. Hussey

Abstract: We report on high-field angle-dependent magneto-transport measurements on epitaxial thin films of Bi2Se3, a three-dimensional topological insulator. At low temperature, we observe quantum oscillations that demonstrate the simultaneous presence of bulk and surface carriers. The magneto- resistance of Bi2Se3 is found to be highly anisotropic. In the presence of a parallel electric and magnetic field… ▽ More We report on high-field angle-dependent magneto-transport measurements on epitaxial thin films of Bi2Se3, a three-dimensional topological insulator. At low temperature, we observe quantum oscillations that demonstrate the simultaneous presence of bulk and surface carriers. The magneto- resistance of Bi2Se3 is found to be highly anisotropic. In the presence of a parallel electric and magnetic field, we observe a strong negative longitudinal magneto-resistance that has been consid- ered as a smoking-gun for the presence of chiral fermions in a certain class of semi-metals due to the so-called axial anomaly. Its observation in a three-dimensional topological insulator implies that the axial anomaly may be in fact a far more generic phenomenon than originally thought. △ Less

Submitted 11 August, 2016; originally announced August 2016.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 94, 081302(R) (2016)

Strain Engineering of the Band Gap of HgTe Quantum Wells using Superlattice Virtual Substrates

Authors: Philipp Leubner, Lukas Lunczer, Christoph Brüne, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: The HgTe quantum well (QW) is a well-characterized two-dimensional topological insulator (2D-TI). Its band gap is relatively small (typically on the order of 10 meV), which restricts the observation of purely topological conductance to low temperatures. Here, we utilize the strain-dependence of the band structure of HgTe QWs to address this limitation. We use… ▽ More The HgTe quantum well (QW) is a well-characterized two-dimensional topological insulator (2D-TI). Its band gap is relatively small (typically on the order of 10 meV), which restricts the observation of purely topological conductance to low temperatures. Here, we utilize the strain-dependence of the band structure of HgTe QWs to address this limitation. We use $\text{CdTe}-\text{Cd}_{0.5}\text{Zn}_{0.5}\text{Te}$ strained-layer superlattices on GaAs as virtual substrates with adjustable lattice constant to control the strain of the QW. We present magneto-transport measurements, which demonstrate a transition from a semi- metallic to a 2D-TI regime in wide QWs, when the strain is changed from tensile to compressive. Most notably, we demonstrate a much enhanced energy gap of 55 meV in heavily compressively strained QWs. This value exceeds the highest possible gap on common II-VI substrates by a factor of 2-3, and extends the regime where the topological conductance prevails to much higher temperatures. △ Less

Submitted 4 August, 2016; originally announced August 2016.

Comments: 8 pages, 6 figures (including supplementary section), accepted for publication in Physical Review Letters

Journal ref: Phys. Rev. Lett. 117, 086403 (2016)

High-temperature quantum Hall effect in finite gapped HgTe quantum wells

Authors: T. Khouri, M. Bendias, P. Leubner, C. Brüne, H. Buhmann, L. W. Molenkamp, U. Zeitler, N. E. Hussey, S. Wiedmann

Abstract: We report on the observation of the quantum Hall effect at high temperatures in HgTe quantum wells with a finite band gap and a thickness below and above the critical thickness $d_\textnormal{c}$ that separates a conventional semiconductor from a two-dimensional topological insulator. At high carrier concentrations we observe a quantized Hall conductivity up to 60\,K with energy gaps between Landa… ▽ More We report on the observation of the quantum Hall effect at high temperatures in HgTe quantum wells with a finite band gap and a thickness below and above the critical thickness $d_\textnormal{c}$ that separates a conventional semiconductor from a two-dimensional topological insulator. At high carrier concentrations we observe a quantized Hall conductivity up to 60\,K with energy gaps between Landau Levels of the order of 25\,meV, in good agreement with the Landau Level spectrum obtained from $\mathbf{k\cdot p}$-calculations. Using the scaling approach for the plateau-plateau transition at $ν=2\rightarrow 1$, we find the scaling coefficient $κ=0.45 \pm 0.04$ to be consistent with the universality of scaling theory and we do not find signs of increased electron-phonon interaction to alter the scaling even at these elevated temperatures. Comparing the high temperature limit of the quantized Hall resistance in HgTe quantum wells with a finite band gap with room temperature experiment in graphene, we find the energy gaps at the break-down of the quantization to exceed the thermal energy by the same order of magnitude. △ Less

Submitted 11 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. B 93 (2016) 125308

Josephson radiation from gapless Andreev bound states in HgTe-based topological junctions

Authors: Russell S. Deacon, Jonas Wiedenmann, Erwann Bocquillon, Fernando Domínguez, Teun M. Klapwijk, Philipp Leubner, Christoph Brüne, Ewelina M. Hankiewicz, Seigo Tarucha, Koji Ishibashi, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: Frequency analysis of the rf emission of oscillating Josephson supercurrent is a powerful passive way of probing properties of topological Josephson junctions. In particular, measurements of the Josephson emission enables to detect the expected presence of topological gapless Andreev bound states that give rise to emission at half the Josephson frequency $f_J$, rather than conventional emission at… ▽ More Frequency analysis of the rf emission of oscillating Josephson supercurrent is a powerful passive way of probing properties of topological Josephson junctions. In particular, measurements of the Josephson emission enables to detect the expected presence of topological gapless Andreev bound states that give rise to emission at half the Josephson frequency $f_J$, rather than conventional emission at $f_J$. Here we report direct measurement of rf emission spectra on Josephson junctions made of HgTe-based gate-tunable topological weak links. The emission spectra exhibit a clear signal at half the Josephson frequency $f_{\rm J}/2$. The linewidths of emission lines indicate a coherence time of $0.3-\SI{4}{ns}$ for the $f_{\rm J}/2$ line, much shorter than for the $f_{\rm J}$ line ($3-\SI{4}{ns}$). These observations strongly point towards the presence of topological gapless Andreev bound states, and pave the way for a future HgTe-based platform for topological quantum computation. △ Less

Submitted 18 August, 2016; v1 submitted 31 March, 2016; originally announced March 2016.

Comments: Updated version, with additional modeling

Journal ref: Phys. Rev. X 7, 021011 (2017)

Thermoelectrics with Coulomb coupled quantum dots

Authors: Holger Thierschmann, Rafael Sánchez, Björn Sothmann, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: In this article we review the thermoelectric properties of three terminal devices with Coulomb coupled quantum dots (QDs) as observed in recent experiments [1,2]. The system we consider consists of two Coulomb-blockade QDs one of which can exchange electrons with only a single reservoir (heat reservoir) while the other dot is tunnel coupled to two reservoirs at a lower temperature (conductor). The… ▽ More In this article we review the thermoelectric properties of three terminal devices with Coulomb coupled quantum dots (QDs) as observed in recent experiments [1,2]. The system we consider consists of two Coulomb-blockade QDs one of which can exchange electrons with only a single reservoir (heat reservoir) while the other dot is tunnel coupled to two reservoirs at a lower temperature (conductor). The heat reservoir and the conductor interact only via the Coulomb-coupling of the quantum dots. It has been found that two regimes have to be considered. In the first one heat flow between the two systems is small. In this regime thermally driven occupation fluctuations of the hot QD modify the transport properties of the conductor system. This leads to an effect called thermal gating. Experiment have shown how this can be used to control charge flow in the conductor by means of temperature in a remote reservoir. We further substantiate the observations with model calculations and implications for the realization of an all-thermal transistor are discussed. In the second regime, heat flow between the two systems is relevant. Here the system works as a nano scale heat engine, as proposed recently [3]. We review the conceptual idea, its experimental realization and the novel features arising in this new kind of thermoelectric device such as decoupling of heat and charge flow. △ Less

Submitted 29 March, 2016; originally announced March 2016.

Comments: 18 pages, 10 figures, submitted to Comptes Rendue Physique

Journal ref: Comptes rendus - Physique 17 (2016) pp. 1109-1122

Three-Terminal Energy Harvester with Coupled Quantum Dots

Authors: Holger Thierschmann, Rafael Sánchez, Björn Sothmann, Fabian Arnold, Christian Heyn, Wolfgang Hansen, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: Rectification of thermal fluctuations in mesoscopic conductors is the key idea of today's attempts to build nanoscale thermoelectric energy harvesters in order to convert heat into a useful electric power. So far, most concepts make use of the Seebeck effect in a two-terminal geometry where heat and charge are both carried by the same particles. Here, we experimentally demonstrate the working prin… ▽ More Rectification of thermal fluctuations in mesoscopic conductors is the key idea of today's attempts to build nanoscale thermoelectric energy harvesters in order to convert heat into a useful electric power. So far, most concepts make use of the Seebeck effect in a two-terminal geometry where heat and charge are both carried by the same particles. Here, we experimentally demonstrate the working principle of a new kind of energy harvester, proposed recently using two capacitively coupled quantum dots. We show that due to its novel three-terminal design which spatially separates the heat reservoir from the conductor circuit, the directions of charge and heat flow become decoupled in our device. This enables us to manipulate the direction of the generated charge current by means of external gate voltages while leaving the direction of heat flow unaffected. Our results pave the way for a new generation of multi-terminal, highly efficient nanoscale heat engines. △ Less

Submitted 28 March, 2016; originally announced March 2016.

Journal ref: Nature Nanotechnology 10, 854-858 (2015)

Observation of the universal magnetoelectric effect in a 3D topological insulator

Authors: V. Dziom, A. Shuvaev, A. Pimenov, G. V. Astakhov, C. Ames, K. Bendias, J. Böttcher, G. Tkachov, E. M. Hankiewicz, C. Brüne, H Buhmann, L. W. Molenkamp

Abstract: The electrodynamics of topological insulators (TIs) is described by modified Maxwell's equations, which contain additional terms that couple an electric field to a magnetization and a magnetic field to a polarization of the medium, such that the coupling coefficient is quantized in odd multiples of $e^2 / 2 h c $ per surface. Here, we report on the observation of this so-called topological magneto… ▽ More The electrodynamics of topological insulators (TIs) is described by modified Maxwell's equations, which contain additional terms that couple an electric field to a magnetization and a magnetic field to a polarization of the medium, such that the coupling coefficient is quantized in odd multiples of $e^2 / 2 h c $ per surface. Here, we report on the observation of this so-called topological magnetoelectric (TME) effect. We use monochromatic terahertz (THz) spectroscopy of TI structures equipped with a semi-transparent gate to selectively address surface states. In high external magnetic fields, we observe a universal Faraday rotation angle equal to the fine structure constant $α= e^2 / \hbar c$ when a linearly polarized THz radiation of a certain frequency passes through the two surfaces of a strained HgTe 3D TI. These experiments give insight into axion electrodynamics of TIs and may potentially be used for a metrological definition of the three basic physical constants. △ Less

Submitted 17 March, 2016; originally announced March 2016.

Comments: Submitted 13 March, 2016; 7 pages, 4 figures

Journal ref: Nat. Commun. 8, 15197 (2017)

Gapless Andreev bound states in the quantum spin Hall insulator HgTe

Authors: Erwann Bocquillon, Russell S. Deacon, Jonas Wiedenmann, Philipp Leubner, Teun M. Klapwijk, Christoph Brüne, Koji Ishibashi, H. Buhmann, Laurens W. Molenkamp

Abstract: In recent years, Majorana physics has attracted considerable attention in both theoretical and experimental studies due to exotic new phenomena and its prospects for fault-tolerant topological quantum computation. To this end, one needs to engineer the interplay between superconductivity and electronic properties in a topological insulator, but experimental work remains scarce and ambiguous. Here… ▽ More In recent years, Majorana physics has attracted considerable attention in both theoretical and experimental studies due to exotic new phenomena and its prospects for fault-tolerant topological quantum computation. To this end, one needs to engineer the interplay between superconductivity and electronic properties in a topological insulator, but experimental work remains scarce and ambiguous. Here we report experimental evidence for topological superconductivity induced in a HgTe quantum well, a two-dimensional topological insulator that exhibits the quantum spin Hall effect. The ac Josephson effect demonstrates that the supercurrent has a $4π$-periodicity with the superconducting phase difference as indicated by a doubling of the voltage step for multiple Shapiro steps. In addition, an anomalous SQUID-like response to a perpendicular magnetic field shows that this $4π$-periodic supercurrent originates from states located on the edges of the junction. Both features appear strongest when the sample is gated towards the quantum spin Hall regime, thus providing evidence for induced topological superconductivity in the quantum spin Hall edge states. △ Less

Submitted 29 January, 2016; originally announced January 2016.

Comments: 16 pages, 5 figures (main text) + 11 pages, 4 figures (SI)

Phase-sensitive SQUIDs based on the 3D topological insulator HgTe

Authors: Luis Maier, Erwann Bocquillon, Manuel Grimm, Jeroen B. Oostinga, Christopher Ames, Charles Gould, Christoph Brüne, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: Three-dimensional topological insulators represent a new class of materials in which transport is governed by Dirac surface states while the bulk remains insulating. Due to helical spin polarization of the surface states, the coupling of a 3D topological insulator to a nearby superconductor is expected to generate unconventional proximity induced $p$-wave superconductivity. We report here on the d… ▽ More Three-dimensional topological insulators represent a new class of materials in which transport is governed by Dirac surface states while the bulk remains insulating. Due to helical spin polarization of the surface states, the coupling of a 3D topological insulator to a nearby superconductor is expected to generate unconventional proximity induced $p$-wave superconductivity. We report here on the development and measurements of SQUIDs on the surface of strained HgTe, a 3D topological insulator, as a potential tool to investigate this effect. △ Less

Submitted 15 October, 2015; originally announced October 2015.

Comments: 5 pages, 4 figures, contribution to the Nobel Symposium 156: New forms of matter: topological insulators and superconductors

Journal ref: Phys. Scr. T164 (2015) 014002

Controlled Finite Momentum Pairing and Spatially Varying Order Parameter in Proximitized HgTe Quantum Wells

Authors: Sean Hart, Hechen Ren, Michael Kosowsky, Gilad Ben-Shach, Philipp Leubner, Christoph Brüne, Hartmut Buhmann, Laurens W. Molenkamp, Bertrand I. Halperin, Amir Yacoby

Abstract: Conventional $s$-wave superconductivity is understood to arise from singlet pairing of electrons with opposite Fermi momenta, forming Cooper pairs whose net momentum is zero [1]. Several recent studies have focused on structures where such conventional $s$-wave superconductors are coupled to systems with an unusual configuration of electronic spin and momentum at the Fermi surface. Under these con… ▽ More Conventional $s$-wave superconductivity is understood to arise from singlet pairing of electrons with opposite Fermi momenta, forming Cooper pairs whose net momentum is zero [1]. Several recent studies have focused on structures where such conventional $s$-wave superconductors are coupled to systems with an unusual configuration of electronic spin and momentum at the Fermi surface. Under these conditions, the nature of the paired state can be modified and the system may even undergo a topological phase transition [2, 3]. Here we present measurements and theoretical calculations of several HgTe quantum wells coupled to either aluminum or niobium superconductors and subject to a magnetic field in the plane of the quantum well. By studying the oscillatory response of Josephson interference to the magnitude of the in-plane magnetic field, we find that the induced pairing within the quantum well is spatially varying. Cooper pairs acquire a tunable momentum that grows with magnetic field strength, directly reflecting the response of the spin-dependent Fermi surfaces to the in-plane magnetic field. In addition, in the regime of high electron density, nodes in the induced superconductivity evolve with the electron density in agreement with our model based on the Hamiltonian of Bernevig, Hughes, and Zhang [4]. This agreement allows us to quantitatively extract the value of $\tilde{g}/v_{F}$, where $\tilde{g}$ is the effective g-factor and $v_{F}$ is the Fermi velocity. However, at low density our measurements do not agree with our model in detail. Our new understanding of the interplay between spin physics and superconductivity introduces a way to spatially engineer the order parameter, as well as a general framework within which to investigate electronic spin texture at the Fermi surface of materials. △ Less

Submitted 9 September, 2015; originally announced September 2015.

Temperature-driven transition from a semiconductor to a topological insulator

Authors: Steffen Wiedmann, Andreas Jost, Cornelius Thienel, Christoph Brüne, Philipp Leubner, Hartmut Buhmann, Laurens W. Molenkamp, J. C. Maan, Uli Zeitler

Abstract: We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we are in the regime of the quantum spin Hall effect and observe an ambipolar quantized Hall resistance by tuning the Fermi energy through the bulk band gap. At roo… ▽ More We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we are in the regime of the quantum spin Hall effect and observe an ambipolar quantized Hall resistance by tuning the Fermi energy through the bulk band gap. At room temperature, we find electron and hole conduction that can be described by a classical two-carrier model. Above the onset of quantized magnetotransport at low temperature, we observe a pronounced linear magnetoresistance that develops from a classical quadratic low-field magnetoresistance if electrons and holes coexist. Temperature-dependent bulk band structure calculations predict a transition from a conventional semiconductor to a topological insulator in the regime where the linear magnetoresistance occurs. △ Less

Submitted 22 May, 2015; originally announced May 2015.

Comments: 7 pages, 6 figures

Journal ref: Phys. Rev. B 91, 205311 (2015)

Suppressing twin formation in Bi2Se3 thin films

Authors: N. V. Tarakina, S. Schreyeck, M. Luysberg, S. Grauer, C. Schumacher, G. Karczewski, K. Brunner, C. Gould, H. Buhmann, R. E. Dunin-Borkowski, L. W. Molenkamp

Abstract: The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray reflectivity, atomic force microscopy and probe-corrected scanning transmission electron microscopy. The use of a rough Fe-doped InP(111)B substrate results in complete s… ▽ More The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray reflectivity, atomic force microscopy and probe-corrected scanning transmission electron microscopy. The use of a rough Fe-doped InP(111)B substrate results in complete suppression of twin formation in the Bi2Se3 thin films and a perfect interface between the films and their substrates. The only type of structural defects that persist in the "twin-free" films is an antiphase domain boundary, which is associated with variations in substrate height. It is also shown that the substrate surface termination determines which family of twin domains dominates. △ Less

Submitted 22 March, 2015; originally announced March 2015.

Journal ref: Adv. Mater. Interfaces 1 (2014) 1400134

$4π$-periodic Josephson supercurrent in HgTe-based topological Josephson junctions

Authors: Jonas Wiedenmann, Erwann Bocquillon, Russell S. Deacon, Simon Hartinger, Oliver Herrmann, Teun M. Klapwijk, Luis Maier, Christopher Ames, Christoph Brüne, Charles Gould, Akira Oiwa, Koji Ishibashi, Seigo Tarucha, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: The Josephson effect describes the generic appearance of a supercurrent in a weak link between two superconductors. Its exact physical nature however deeply influences the properties of the supercurrent. Detailed studies of Josephson junctions can reveal microscopic properties of the superconducting pairing (spin-triplet correlations, $d$-wave symmetry) or of the electronic transport (quantum dot,… ▽ More The Josephson effect describes the generic appearance of a supercurrent in a weak link between two superconductors. Its exact physical nature however deeply influences the properties of the supercurrent. Detailed studies of Josephson junctions can reveal microscopic properties of the superconducting pairing (spin-triplet correlations, $d$-wave symmetry) or of the electronic transport (quantum dot, ballistic channels). In recent years, considerable efforts have focused on the coupling of superconductors to topological insulators, in which transport is mediated by topologically protected Dirac surface states with helical spin polarization (while the bulk remains insulating). Here, the proximity of a superconductor is predicted to give rise to unconventional induced $p$-wave superconductivity, with a doublet of topologically protected gapless Andreev bound states, whose energies varies $4π$-periodically with the superconducting phase difference across the junction. In this article, we report the observation of an anomalous response to rf irradiation in a Josephson junction with a weak link of the 3D topological insulator HgTe. The response is understood as due to a $4π$-periodic contribution to the supercurrent, and its amplitude is compatible with the expected contribution of a gapless Andreev doublet. △ Less

Submitted 20 October, 2015; v1 submitted 18 March, 2015; originally announced March 2015.

Comments: revised version, main text : 15 pages, 4 figures, supplementary information : 34 pages, 17 figures

Journal ref: Nature Communications 7, 10303 (2016)

Thermal Gating of Charge Currents with Coulomb Coupled Quantum Dots

Authors: Holger Thierschmann, Fabian Arnold, Marcel Mittermüller, Luis Maier, Christian Heyn, Wolfgang Hansen, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: We have observed thermal gating, i.e. electrostatic gating induced by hot electrons. The effect occurs in a device consisting of two capacitively coupled quantum dots. The double dot system is coupled to a hot electron reservoir on one side (QD1), whilst the conductance of the second dot (QD2) is monitored. When a bias across QD2 is applied we observe a current which is strongly dependent on the t… ▽ More We have observed thermal gating, i.e. electrostatic gating induced by hot electrons. The effect occurs in a device consisting of two capacitively coupled quantum dots. The double dot system is coupled to a hot electron reservoir on one side (QD1), whilst the conductance of the second dot (QD2) is monitored. When a bias across QD2 is applied we observe a current which is strongly dependent on the temperature of the heat reservoir. This current can be either enhanced or suppressed, depending on the relative energetic alignment of the QD levels. Thus, the system can be used to control a charge current by hot electrons. △ Less

Submitted 10 February, 2015; originally announced February 2015.

Comments: 12 pages, 4 figures

Journal ref: New J. Phys. 17, 113003 (2015)

Non-sinusoidal current-phase relationship in Josephson junctions from the 3D topological insulator HgTe

Authors: Ilya Sochnikov, Luis Maier, Christopher A. Watson, John R. Kirtley, Charles Gould, Grigory Tkachov, Ewelina M. Hankiewicz, Christoph Brüne, Hartmut Buhmann, Laurens W. Molenkamp, Kathryn A. Moler

Abstract: We use Superconducting QUantum Interference Device (SQUID) microscopy to characterize the current-phase relation (CPR) of Josephson Junctions from 3-dimentional topological insulator HgTe (3D-HgTe). We find clear skewness in the CPRs of HgTe junctions ranging in length from 200 nm to 600 nm. The skewness indicates that the Josephson current is predominantly carried by Andreev bound states with hig… ▽ More We use Superconducting QUantum Interference Device (SQUID) microscopy to characterize the current-phase relation (CPR) of Josephson Junctions from 3-dimentional topological insulator HgTe (3D-HgTe). We find clear skewness in the CPRs of HgTe junctions ranging in length from 200 nm to 600 nm. The skewness indicates that the Josephson current is predominantly carried by Andreev bound states with high transmittance, and the fact that the skewness persists in junctions that are longer than the mean free path suggests that the effect may be related to the helical nature of the Andreev bound states in the surface of HgTe. △ Less

Submitted 12 October, 2014; v1 submitted 4 October, 2014; originally announced October 2014.

Journal ref: Phys. Rev. Lett. 114, 066801 (2015)

Dirac-screening stabilized surface-state transport in a topological insulator

Authors: Christoph Brüne, Cornelius Thienel, Michael Stuiber, Jan Böttcher, Hartmut Buhmann, Elena G. Novik, Chao-Xing Liu, Ewelina M. Hankiewicz, Laurens W. Molenkamp

Abstract: We report magnetotransport studies on a gated strained HgTe device. This material is a threedimensional topological insulator and exclusively shows surface state transport. Remarkably, the Landau level dispersion and the accuracy of the Hall quantization remain unchanged over a wide density range ($3 \times 10^{11} cm^{-2} < n < 1 \times 10^{12} cm^{-2}$). This implies that even at large carrier d… ▽ More We report magnetotransport studies on a gated strained HgTe device. This material is a threedimensional topological insulator and exclusively shows surface state transport. Remarkably, the Landau level dispersion and the accuracy of the Hall quantization remain unchanged over a wide density range ($3 \times 10^{11} cm^{-2} < n < 1 \times 10^{12} cm^{-2}$). This implies that even at large carrier densities the transport is surface state dominated, where bulk transport would have been expected to coexist already. Moreover, the density dependence of the Dirac-type quantum Hall effect allows to identify the contributions from the individual surfaces. A $k \cdot p$ model can describe the experiments, but only when assuming a steep band bending across the regions where the topological surface states are contained. This steep potential originates from the specific screening properties of Dirac systems and causes the gate voltage to influence the position of the Dirac points rather than that of the Fermi level. △ Less

Submitted 24 July, 2014; originally announced July 2014.

Comments: 12 pages 4 figures

Induced Superconductivity in the Quantum Spin Hall Edge

Authors: Sean Hart, Hechen Ren, Timo Wagner, Philipp Leubner, Mathias Mühlbauer, Christoph Brüne, Hartmut Buhmann, Laurens W. Molenkamp, Amir Yacoby

Abstract: Topological insulators are a newly discovered phase of matter characterized by a gapped bulk surrounded by novel conducting boundary states. Since their theoretical discovery, these materials have encouraged intense efforts to study their properties and capabilities. Among the most striking results of this activity are proposals to engineer a new variety of superconductor at the surfaces of topolo… ▽ More Topological insulators are a newly discovered phase of matter characterized by a gapped bulk surrounded by novel conducting boundary states. Since their theoretical discovery, these materials have encouraged intense efforts to study their properties and capabilities. Among the most striking results of this activity are proposals to engineer a new variety of superconductor at the surfaces of topological insulators. These topological superconductors would be capable of supporting localized Majorana fermions, particles whose braiding properties have been proposed as the basis of a fault-tolerant quantum computer. Despite the clear theoretical motivation, a conclusive realization of topological superconductivity remains an outstanding experimental goal. Here we present measurements of superconductivity induced in two-dimensional HgTe/HgCdTe quantum wells, a material which becomes a quantum spin Hall insulator when the well width exceeds d_{C}=6.3 nm. In wells that are 7.5 nm wide, we find that supercurrents are confined to the one-dimensional sample edges as the bulk density is depleted. However, when the well width is decreased to 4.5 nm the edge supercurrents cannot be distinguished from those in the bulk. These results provide evidence for superconductivity induced in the helical edges of the quantum spin Hall effect, a promising step toward the demonstration of one-dimensional topological superconductivity. Our results also provide a direct measurement of the widths of these edge channels, which range from 180 nm to 408 nm. △ Less

Submitted 9 December, 2013; originally announced December 2013.

Comments: 20 pages, 12 figures

One-dimensional weak antilocalization and band Berry phases in HgTe wires

Authors: M. Mühlbauer, A. Budewitz, B. Büttner, G. Tkachov, E. M. Hankiewicz, C. Brüne, H. Buhmann, L. W. Molenkamp

Abstract: We study the weak antilocalization (WAL) effect in the magnetoresistance of narrow HgTe wires fabricated in quantum wells (QWs) with normal and inverted band ordering. Measurements at different gate voltages indicate that the WAL is only weakly affected by Rashba spin-orbit splitting and persists when the Rashba splitting is about zero. The WAL signal in wires with normal band ordering is an order… ▽ More We study the weak antilocalization (WAL) effect in the magnetoresistance of narrow HgTe wires fabricated in quantum wells (QWs) with normal and inverted band ordering. Measurements at different gate voltages indicate that the WAL is only weakly affected by Rashba spin-orbit splitting and persists when the Rashba splitting is about zero. The WAL signal in wires with normal band ordering is an order of magnitude smaller than for inverted ones. These observations are attributed to a Dirac-like topology of the energy bands in HgTe QWs. From the magnetic-field and temperature dependencies we extract the dephasing lengths and band Berry phases. The weaker WAL for samples with a normal band structure can be explained by a non-universal Berry phase which always exceeds π, the characteristic value for gapless Dirac fermions. △ Less

Submitted 12 June, 2013; originally announced June 2013.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 112, 146803, 2014

Josephson supercurrent through the topological surface states of strained bulk HgTe

Authors: Jeroen B. Oostinga, Luis Maier, Peter Schueffelgen, Daniel Knott, Christopher Ames, Christoph Bruene, Grigory Tkachov, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: Strained bulk HgTe is a three-dimensional topological insulator, whose surface electrons have a high mobility (30,000 cm^2/Vs), while its bulk is effectively free of mobile charge carriers. These properties enable a study of transport through its unconventional surface states without being hindered by a parallel bulk conductance. Here, we show transport experiments on HgTe-based Josephson junction… ▽ More Strained bulk HgTe is a three-dimensional topological insulator, whose surface electrons have a high mobility (30,000 cm^2/Vs), while its bulk is effectively free of mobile charge carriers. These properties enable a study of transport through its unconventional surface states without being hindered by a parallel bulk conductance. Here, we show transport experiments on HgTe-based Josephson junctions to investigate the appearance of the predicted Majorana states at the interface between a topological insulator and a superconductor. Interestingly, we observe a dissipationless supercurrent flow through the topological surface states of HgTe. The current-voltage characteristics are hysteretic at temperatures below 1 K with critical supercurrents of several microamperes. Moreover, we observe a magnetic field induced Fraunhofer pattern of the critical supercurrent, indicating a dominant 2π-periodic Josephson effect in the unconventional surface states. Our results show that strained bulk HgTe is a promising material system to get a better understanding of the Josephson effect in topological surface states, and to search for the manifestation of zero-energy Majorana states in transport experiments. △ Less

Submitted 1 June, 2013; originally announced June 2013.

Comments: experimental paper; 19 pages, 4 figures

Journal ref: Phys. Rev. X 3, 021007 (2013)

Molecular beam epitaxy of high structural quality Bi2Se3 on lattice matched InP(111) substrates

Authors: S. Schreyeck, N. V. Tarakina, G. Karczewski, C. Schumacher, T. Borzenko, C. Bruene, H. Buhmann, C. Gould, K. Brunner, L. W. Molenkamp

Abstract: Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality compared to layers deposited on other substrates. The measured full width at half maximum of the rocking curve is Delta omega=13 arcsec, and the (omega-2theta) sc… ▽ More Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality compared to layers deposited on other substrates. The measured full width at half maximum of the rocking curve is Delta omega=13 arcsec, and the (omega-2theta) scans exhibit clear layer thickness fringes. Atomic force microscope images show triangular twin domains with sizes increasing with layer thickness. The structural quality of the domains is confirmed on the microscopic level by transmission electron microscopy. △ Less

Submitted 14 February, 2013; originally announced February 2013.

Comments: 4 pages, 4 figures

Journal ref: Appl. Phys. Lett. 102, 041914 (2013)

Unexpected edge conduction in HgTe quantum wells under broken time reversal symmetry

Authors: Eric Yue Ma, M. Reyes Calvo, **g Wang, Biao Lian, Mathias Muhlbauer Christoph Brune, Yong-Tao Cui, Keji Lai, Worasom Kundhikanjana, Yongliang Yang, Matthias Baenninger, Markus Konig, Christopher Ames, Hartmut Buhmann, Philipp Leubner, Laurens W. Molenkamp, Shou-Cheng Zhang, David Goldhaber-Gordon, Michael K. Kelly, Zhi-Xun Shen

Abstract: The realization of quantum spin Hall (QSH) effect in HgTe quantum wells (QWs) is considered a milestone in the discovery of topological insulators. The QSH edge states are predicted to allow current to flow at the edges of an insulating bulk, as demonstrated in various experiments. A key prediction of QSH theory that remains to be experimentally verified is the breakdown of the edge conduction und… ▽ More The realization of quantum spin Hall (QSH) effect in HgTe quantum wells (QWs) is considered a milestone in the discovery of topological insulators. The QSH edge states are predicted to allow current to flow at the edges of an insulating bulk, as demonstrated in various experiments. A key prediction of QSH theory that remains to be experimentally verified is the breakdown of the edge conduction under broken time reversal symmetry (TRS). Here we first establish a rigorous framework for understanding the magnetic field dependence of electrostatically gated QSH devices. We then report unexpected edge conduction under broken TRS, using a unique cryogenic microwave impedance microscopy (MIM), on a 7.5 nm HgTe QW device with an inverted band structure. At zero magnetic field and low carrier densities, clear edge conduction is observed in the local conductivity profile of this device but not in the 5.5 nm control device whose band structure is trivial. Surprisingly, the edge conduction in the 7.5 nm device persists up to 9 T with little effect from the magnetic field. This indicates physics beyond simple QSH models, possibly associated with material- specific properties, other symmetry protection and/or electron-electron interactions. △ Less

Submitted 2 June, 2015; v1 submitted 27 December, 2012; originally announced December 2012.

Comments: 18 pages, 3 figures, accepted to Nature Communication

Journal ref: Nature Communications 6, Article number: 7252, 2015

Imaging currents in HgTe quantum wells in the quantum spin Hall regime

Authors: Katja C. Nowack, Eric M. Spanton, Matthias Baenninger, Markus König, John R. Kirtley, Beena Kalisky, C. Ames, Philipp Leubner, Christoph Brüne, Hartmut Buhmann, Laurens W. Molenkamp, David Goldhaber-Gordon, Kathryn A. Moler

Abstract: The quantum spin Hall (QSH) state is a genuinely new state of matter characterized by a non-trivial topology of its band structure. Its key feature is conducting edge channels whose spin polarization has potential for spintronic and quantum information applications. The QSH state was predicted and experimentally demonstrated to exist in HgTe quantum wells. The existence of the edge channels has be… ▽ More The quantum spin Hall (QSH) state is a genuinely new state of matter characterized by a non-trivial topology of its band structure. Its key feature is conducting edge channels whose spin polarization has potential for spintronic and quantum information applications. The QSH state was predicted and experimentally demonstrated to exist in HgTe quantum wells. The existence of the edge channels has been inferred from the fact that local and non-local conductance values in sufficiently small devices are close to the quantized values expected for ideal edge channels and from signatures of the spin polarization. The robustness of the edge channels in larger devices and the interplay between the edge channels and a conducting bulk are relatively unexplored experimentally, and are difficult to assess via transport measurements. Here we image the current in large Hallbars made from HgTe quantum wells by probing the magnetic field generated by the current using a scanning superconducting quantum interference device (SQUID). We observe that the current flows along the edge of the device in the QSH regime, and furthermore that an identifiable edge channel exists even in the presence of disorder and considerable bulk conduction as the device is gated or its temperature is raised. Our results represent a versatile method for the characterization of new quantum spin Hall materials systems, and confirm both the existence and the robustness of the predicted edge channels. △ Less

Submitted 13 December, 2012; v1 submitted 10 December, 2012; originally announced December 2012.

Comments: 11 pages, 4 figures; v2: link to supplementary information added, see http://www.stanford.edu/group/moler/publications.html

Room temperature electrically tunable broadband terahertz Faraday effect

Authors: Alexey Shuvaev, Andrei Pimenov, Georgy V. Astakhov, Mathias Mühlbauer, Christoph Brüne, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: The terahertz (THz) frequency range (0.1-10 THz) fills the gap between the microwave and optical parts of the electromagnetic spectrum. Recent progress in the generation and detection of the THz radiation has made it a powerful tool for fundamental research and resulted in a number of applications. However, some important components necessary to effectively manipulate THz radiation are still missi… ▽ More The terahertz (THz) frequency range (0.1-10 THz) fills the gap between the microwave and optical parts of the electromagnetic spectrum. Recent progress in the generation and detection of the THz radiation has made it a powerful tool for fundamental research and resulted in a number of applications. However, some important components necessary to effectively manipulate THz radiation are still missing. In particular, active polarization and phase control over a broad THz band would have major applications in science and technology. It would, e.g., enable high-speed modulation for wireless communications and real-time chiral structure spectroscopy of proteins and DNA. In physics, this technology can be also used to precisely measure very weak Faraday and Kerr effects, as required, for instance, to probe the electrodynamics of topological insulators. Phase control of THz radiation has been demonstrated using various approaches. They depend either on the physical dimensions of the phase plate (and hence provide a fixed phase shift) or on a mechanically controlled time delay between optical pulses (and hence prevent fast modulation). Here, we present data that demonstrate the room temperature giant Faraday effect in HgTe can be electrically tuned over a wide frequency range (0.1-1 THz). The principle of operation is based on the field effect in a thin HgTe semimetal film. These findings together with the low scattering rate in HgTe open a new approach for high-speed amplitude and phase modulation in the THz frequency range. △ Less

Submitted 23 November, 2012; originally announced November 2012.

Spatially resolved study of backscattering in the quantum spin Hall state

Authors: Markus König, Matthias Baenninger, Andrei G. F. Garcia, Nahid Harjee, Beth L. Pruitt, C. Ames, Philipp Leubner, Christoph Brüne, Hartmut Buhmann, Laurens W. Molenkamp, David Goldhaber-Gordon

Abstract: The discovery of the Quantum Spin Hall state, and topological insulators in general, has sparked strong experimental efforts. Transport studies of the Quantum Spin Hall state confirmed the presence of edge states, showed ballistic edge transport in micron-sized samples and demonstrated the spin polarization of the helical edge states. While these experiments have confirmed the broad theoretical mo… ▽ More The discovery of the Quantum Spin Hall state, and topological insulators in general, has sparked strong experimental efforts. Transport studies of the Quantum Spin Hall state confirmed the presence of edge states, showed ballistic edge transport in micron-sized samples and demonstrated the spin polarization of the helical edge states. While these experiments have confirmed the broad theoretical model, the properties of the QSH edge states have not yet been investigated on a local scale. Using Scanning Gate Microscopy to perturb the QSH edge states on a sub-micron scale, we identify well-localized scattering sites which likely limit the expected non-dissipative transport in the helical edge channels. In the micron-sized regions between the scattering sites, the edge states appear to propagate unperturbed as expected for an ideal QSH system and are found to be robust against weak induced potential fluctuations. △ Less

Submitted 16 November, 2012; originally announced November 2012.

Comments: 12 pages, including Supplemental Material

Journal ref: Phys. Rev. X 3, 021003 (2013)

Induced superconductivity in the three-dimensional topological insulator HgTe

Authors: Luis Maier, Jeroen B. Oostinga, Daniel Knott, Christoph Bruene, Pauli Virtanen, Grigory Tkachov, Ewelina M. Hankiewicz, Charles Gould, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: A strained and undoped HgTe layer is a three-dimensional topological insulator, in which electronic transport occurs dominantly through its surface states. In this Letter, we present transport measurements on HgTe-based Josephson junctions with Nb as superconductor. Although the Nb-HgTe interfaces have a low transparency, we observe a strong zero-bias anomaly in the differential resistance measure… ▽ More A strained and undoped HgTe layer is a three-dimensional topological insulator, in which electronic transport occurs dominantly through its surface states. In this Letter, we present transport measurements on HgTe-based Josephson junctions with Nb as superconductor. Although the Nb-HgTe interfaces have a low transparency, we observe a strong zero-bias anomaly in the differential resistance measurements. This anomaly originates from proximity-induced superconductivity in the HgTe surface states. In the most transparent junction, we observe periodic oscillations of the differential resistance as function of an applied magnetic field, which correspond to a Fraunhofer-like pattern. This unambiguously shows that a precursor of the Josephson effect occurs in the topological surface states of HgTe. △ Less

Submitted 16 October, 2012; originally announced October 2012.

Comments: Accepted for publication in Physical Review Letters

Journal ref: Phys. Rev. Lett. 109, 186806 (2012)

Terahertz Quantum Hall Effect in a Topological Insulator

Authors: A. M. Shuvaev, G. V. Astakhov, G. Tkachov, C. Brüne, H. Buhmann, L. W. Molenkamp, A. Pimenov

Abstract: Using THz spectroscopy in external magnetic fields we investigate the low-temperature charge dynamics of strained HgTe, a three dimensional topological insulator. From the Faraday rotation angle and ellipticity a complete characterization of the charge carriers is obtained, including the 2D density, the scattering rate and the Fermi velocity. The obtained value of the Fermi velocity provides furth… ▽ More Using THz spectroscopy in external magnetic fields we investigate the low-temperature charge dynamics of strained HgTe, a three dimensional topological insulator. From the Faraday rotation angle and ellipticity a complete characterization of the charge carriers is obtained, including the 2D density, the scattering rate and the Fermi velocity. The obtained value of the Fermi velocity provides further evidence for the Dirac character of the carriers in the sample. In resonator experiments, we observe quantum Hall oscillations at THz frequencies. The 2D density estimated from the period of these oscillations agrees well with direct transport experiments on the topological surface state. Our findings open new avenues for the studies of the finite-frequency quantum Hall effect in topological insulators. △ Less

Submitted 6 August, 2012; originally announced August 2012.

Comments: 5 pages, 3 figures

Spin polarization of the quantum spin Hall edge states

Authors: Christoph Brüne, Andreas Roth, Hartmut Buhmann, Ewelina M. Hankiewicz, Laurens W. Molenkamp, Joseph Maciejko, Xiao-Liang Qi, Shou-Cheng Zhang

Abstract: While the helical character of the edge channels responsible for charge transport in the quantum spin Hall regime of a two-dimensional topological insulator is by now well established, an experimental confirmation that the transport in the edge channels is spin-polarized is still outstanding. We report experiments on nanostructures fabricated from HgTe quantum wells with an inverted band structure… ▽ More While the helical character of the edge channels responsible for charge transport in the quantum spin Hall regime of a two-dimensional topological insulator is by now well established, an experimental confirmation that the transport in the edge channels is spin-polarized is still outstanding. We report experiments on nanostructures fabricated from HgTe quantum wells with an inverted band structure, in which a split gate technique allows us to combine both quantum spin Hall and metallic spin Hall transport in a single device. In these devices, the quantum spin Hall effect can be used as a spin current injector and detector for the metallic spin Hall effect, and vice versa, allowing for an all-electrical detection of spin polarization. △ Less

Submitted 12 July, 2011; v1 submitted 4 July, 2011; originally announced July 2011.

Comments: version 2: supplementary material with additional three figures added. In total 27 pages, 8 figures

Journal ref: Nature Physics 8, 486 (2012)

Surface state charge dynamics of a high-mobility three dimensional topological insulator

Authors: Jason N. Hancock, J. L. M. van Mechelen, Alexey B. Kuzmenko, Dirk van der Marel, Cristoph Brüne, Elina G. Novik, Georgy V. Astakhov, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: We present a magneto-optical study of the three-dimensional topological insulator, strained HgTe using a technique which capitalizes on advantages of time-domain spectroscopy to amplify the signal from the surface states. This measurement delivers valuable and precise information regarding the surface state dispersion within <1 meV of the Fermi level. The technique is highly suitable for the pursu… ▽ More We present a magneto-optical study of the three-dimensional topological insulator, strained HgTe using a technique which capitalizes on advantages of time-domain spectroscopy to amplify the signal from the surface states. This measurement delivers valuable and precise information regarding the surface state dispersion within <1 meV of the Fermi level. The technique is highly suitable for the pursuit of the topological magnetoelectric effect and axion electrodynamics. △ Less

Submitted 5 October, 2011; v1 submitted 4 May, 2011; originally announced May 2011.

Comments: Published version, online Sept 23, 2011

Journal ref: Physical Review Letters 107, 136803 (2011)