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Light-induced renormalization of the Dirac quasiparticles in the nodal-line semimetal ZrSiSe
Authors:
G. Gatti,
A. Crepaldi,
M. Puppin,
N. Tancogne-Dejean,
L. Xian,
S. Roth,
S. Polishchuk,
Ph. Bugnon,
A. Magrez,
H. Berger,
F. Frassetto,
L. Poletto,
L. Moreschini,
S. Moser,
A. Bostwick,
E. Rotenberg,
A. Rubio,
M. Chergui,
M. Grioni
Abstract:
In nodal-line semimetals linearly dispersing states form Dirac loops in the reciprocal space, with high degree of electron-hole symmetry and almost-vanishing density of states near the Fermi level. The result is reduced electronic screening and enhanced correlations between Dirac quasiparticles. Here we investigate the electronic structure of ZrSiSe, by combining time- and angle-resolved photoelec…
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In nodal-line semimetals linearly dispersing states form Dirac loops in the reciprocal space, with high degree of electron-hole symmetry and almost-vanishing density of states near the Fermi level. The result is reduced electronic screening and enhanced correlations between Dirac quasiparticles. Here we investigate the electronic structure of ZrSiSe, by combining time- and angle-resolved photoelectron spectroscopy with ab initio density functional theory (DFT) complemented by an extended Hubbard model (DFT +U +V). We show that electronic correlations are reduced on an ultrashort timescale by optical excitation of high-energy electrons-hole pairs, which transiently screen the Coulomb interaction. Our findings demonstrate an all-optical method for engineering the band structure of a quantum material.
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Submitted 20 December, 2019;
originally announced December 2019.
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The Dirac nodal line network in non-symmorphic rutile semimetal RuO$_2$
Authors:
Vedran Jovic,
Roland J. Koch,
Swarup K. Panda,
Helmuth Berger,
Philippe Bugnon,
Arnaud Magrez,
Ronny Thomale,
Kevin E. Smith,
Silke Biermann,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Domenico Di Sante,
Simon Moser
Abstract:
We employ angle resolved photoemission spectroscopy (ARPES) to investigate the Fermi surface of RuO$_2$. We find a network of two Dirac nodal lines (DNL) as previously predicted in theory, where the valence- and conduction bands touch along continuous lines in momentum space. In addition, we find evidence for a third DNL close to the Fermi level which appears robust despite the presence of signifi…
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We employ angle resolved photoemission spectroscopy (ARPES) to investigate the Fermi surface of RuO$_2$. We find a network of two Dirac nodal lines (DNL) as previously predicted in theory, where the valence- and conduction bands touch along continuous lines in momentum space. In addition, we find evidence for a third DNL close to the Fermi level which appears robust despite the presence of significant spin orbit coupling. We demonstrate that the third DNL gives rise to a topologically trivial flat-band surface state (FBSS) at the (110) surface. This FBSS can be tuned by surface do** and presents an interesting playground for the study of surface chemistry and exotic correlation phenomena.
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Submitted 6 August, 2019;
originally announced August 2019.
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Evidence of Coulomb interaction induced Lifshitz transition and robust hybrid Weyl semimetal in Td MoTe2
Authors:
N. Xu,
Z. W. Wang,
A. Magrez,
P. Bugnon,
H. Berger,
C. E. Matt,
V. N. Strocov,
N. C. Plumb,
M. Radovic,
E. Pomjakushina,
K. Conder,
J. H. Dil,
J. Mesot,
R. Yu,
H. Ding,
M. Shi
Abstract:
Using soft x-ray angle-resolved photoemission spectroscopy we probed the bulk electronic structure of Td MoTe2. We found that on-site Coulomb interaction leads to a Lifshitz transition, which is essential for a precise description of the electronic structure. A hybrid Weyl semimetal state with a pair of energy bands touching at both type-I and type-II Weyl nodes is indicated by comparing the exper…
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Using soft x-ray angle-resolved photoemission spectroscopy we probed the bulk electronic structure of Td MoTe2. We found that on-site Coulomb interaction leads to a Lifshitz transition, which is essential for a precise description of the electronic structure. A hybrid Weyl semimetal state with a pair of energy bands touching at both type-I and type-II Weyl nodes is indicated by comparing the experimental data with theoretical calculations. Unveiling the importance of Coulomb interaction opens up a new route to comprehend the unique properties of MoTe2, and is significant for understanding the interplay between correlation effects, strong spin-orbit coupling and superconductivity in this van der Waals material.
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Submitted 27 August, 2018;
originally announced August 2018.
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Spin-resolved electronic response to the phase transition in MoTe$_2$
Authors:
Andrew P. Weber,
Philipp Rüßmann,
Nan Xu,
Stefan Muff,
Mauro Fanciulli,
Arnaud Magrez,
Philippe Bugnon,
Helmuth Berger,
Nicholas C. Plumb,
Ming Shi,
Stefan Blügel,
Phivos Mavropoulos,
J. Hugo Dil
Abstract:
The semimetal MoTe$_2$ is studied by spin- and angle- resolved photoemission spectroscopy to probe the detailed electronic structure underlying its broad range of response behavior. A novel spin-texture is uncovered in the bulk Fermi surface of the non-centrosymmetric structural phase that is consistent with first-principles calculations. The spin-texture is three-dimensional, both in terms of mom…
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The semimetal MoTe$_2$ is studied by spin- and angle- resolved photoemission spectroscopy to probe the detailed electronic structure underlying its broad range of response behavior. A novel spin-texture is uncovered in the bulk Fermi surface of the non-centrosymmetric structural phase that is consistent with first-principles calculations. The spin-texture is three-dimensional, both in terms of momentum dependence and spin-orientation, and is not completely suppressed above the centrosymmetry-breaking transition temperature. Two types of surface Fermi arc are found to persist well above the transition temperature. The appearance of a large Fermi arc depends strongly on thermal history, and the electron quasiparticle lifetimes are greatly enhanced in the initial cooling. The results indicate that polar instability with strong electron-lattice interactions exists near the surface when the bulk is largely in a centrosymmetric phase.
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Submitted 1 July, 2018;
originally announced July 2018.
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Enhanced ultrafast relaxation rate in the Weyl semimetal phase of $\mathbf{MoTe_2}$ measured by time-and angle-resolved photoelectron spectroscopy
Authors:
A. Crepaldi,
G. Autès,
G. Gatti,
S. Roth,
A. Sterzi,
G. Manzoni,
M. Zacchigna,
C. Cacho,
R. T. Chapman,
E. Springate,
E. A. Seddon,
Ph. Bugnon,
A. Magrez,
H. Berger,
I. Vobornik,
M. Kalläne,
A. Quer,
K. Rossnagel,
F. Parmigiani,
O. V. Yazyev,
M. Grioni
Abstract:
$\mathrm{MoTe_2}$ has recently been shown to realize in its low-temperature phase the type-II Weyl semimetal (WSM). We investigated by time- and angle- resolved photoelectron spectroscopy (tr-ARPES) the possible influence of the Weyl points in the electron dynamics above the Fermi level $\mathrm{E_F}$, by comparing the ultrafast response of $\mathrm{MoTe_2}…
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$\mathrm{MoTe_2}$ has recently been shown to realize in its low-temperature phase the type-II Weyl semimetal (WSM). We investigated by time- and angle- resolved photoelectron spectroscopy (tr-ARPES) the possible influence of the Weyl points in the electron dynamics above the Fermi level $\mathrm{E_F}$, by comparing the ultrafast response of $\mathrm{MoTe_2}$ in the trivial and topological phases. In the low-temperature WSM phase, we report an enhanced relaxation rate of electrons optically excited to the conduction band, which we interpret as a fingerprint of the local gap closure when Weyl points form. By contrast, we find that the electron dynamics of the related compound $\mathrm{WTe_2}$ is slower and temperature-independent, consistent with a topologically trivial nature of this material. Our results shows that tr-ARPES is sensitive to the small modifications of the unoccupied band structure accompanying the structural and topological phase transition of $\mathrm{MoTe_2}$.
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Submitted 28 September, 2017;
originally announced September 2017.
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Universal response of the type-II Weyl semimetals phase diagram
Authors:
P. Rüßmann,
A. P. Weber,
F. Glott,
N. Xu,
M. Fanciulli,
S. Muff,
A. Magrez,
P. Bugnon,
H. Berger,
M. Bode,
J. H. Dil,
S. Blügel,
P. Mavropoulos,
P. Sessi
Abstract:
The discovery of Weyl semimetals represents a significant advance in topological band theory. They paradigmatically enlarged the classification of topological materials to gapless systems while simultaneously providing experimental evidence for the long-sought Weyl fermions. Beyond fundamental relevance, their high mobility, strong magnetoresistance, and the possible existence of even more exotic…
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The discovery of Weyl semimetals represents a significant advance in topological band theory. They paradigmatically enlarged the classification of topological materials to gapless systems while simultaneously providing experimental evidence for the long-sought Weyl fermions. Beyond fundamental relevance, their high mobility, strong magnetoresistance, and the possible existence of even more exotic effects, such as the chiral anomaly, make Weyl semimetals a promising platform to develop radically new technology. Fully exploiting their potential requires going beyond the mere identification of materials and calls for a detailed characterization of their functional response, which is severely complicated by the coexistence of surface- and bulk-derived topologically protected quasiparticles, i.e., Fermi arcs and Weyl points, respectively. Here, we focus on the type-II Weyl semimetal class where we find a stoichiometry-dependent phase transition from a trivial to a non-trivial regime. By exploring the two extreme cases of the phase diagram, we demonstrate the existence of a universal response of both surface and bulk states to perturbations. We show that quasi-particle interference patterns originate from scattering events among surface arcs. Analysis reveals that topologically non-trivial contributions are strongly suppressed by spin texture. We also show that scattering at localized impurities generate defect-induced quasiparticles sitting close to the Weyl point energy. These give rise to strong peaks in the local density of states, which lift the Weyl node significantly altering the pristine low-energy Weyl spectrum. Visualizing the microscopic response to scattering has important consequences for understanding the unusual transport properties of this class of materials. Overall, our observations provide a unifying picture of the Weyl phase diagram.
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Submitted 1 June, 2017;
originally announced June 2017.
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BiTeCl and BiTeBr: a comparative high-pressure optical study
Authors:
I. Crassee,
F. Borondics,
M. K. Tran,
G. Autès,
A. Magrez,
P. Bugnon,
H. Berger,
J. Teyssier,
O. V. Yazyev,
M. Orlita,
A. Akrap
Abstract:
We here report a detailed high-pressure infrared transmission study of BiTeCl and BiTeBr. We follow the evolution of two band transitions: the optical excitation $β$ between two Rashba-split conduction bands, and the absorption $γ$ across the band gap. In the low pressure range, $p< 4$~GPa, for both compounds $β$ is approximately constant with pressure and $γ$ decreases, in agreement with band str…
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We here report a detailed high-pressure infrared transmission study of BiTeCl and BiTeBr. We follow the evolution of two band transitions: the optical excitation $β$ between two Rashba-split conduction bands, and the absorption $γ$ across the band gap. In the low pressure range, $p< 4$~GPa, for both compounds $β$ is approximately constant with pressure and $γ$ decreases, in agreement with band structure calculations. In BiTeCl, a clear pressure-induced phase transition at 6~GPa leads to a different ground state. For BiTeBr, the pressure evolution is more subtle, and we discuss the possibility of closing and reopening of the band gap. Our data is consistent with a Weyl phase in BiTeBr at 5$-$6~GPa, followed by the onset of a structural phase transition at 7~GPa.
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Submitted 28 September, 2016;
originally announced September 2016.
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Evidence for a Strong Topological Insulator Phase in $\mathrm{ZrTe_5}$
Authors:
G. Manzoni,
L. Gragnaniello,
G. Autès,
T. Kuhn,
A. Sterzi,
F. Cilento,
M. Zacchigna,
V. Enenkel,
I. Vobornik,
L. Barba,
F. Bisti,
Ph. Bugnon,
A. Magrez,
V. N. Strocov,
H. Berger,
O. V. Yazyev,
M. Fonin,
F. Parmigiani,
A. Crepaldi
Abstract:
The complex electronic properties of $\mathrm{ZrTe_5}$ have recently stimulated in-depth investigations that assigned this material to either a topological insulator or a 3D Dirac semimetal phase. Here we report a comprehensive experimental and theoretical study of both electronic and structural properties of $\mathrm{ZrTe_5}$, revealing that the bulk material is a strong topological insulator (ST…
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The complex electronic properties of $\mathrm{ZrTe_5}$ have recently stimulated in-depth investigations that assigned this material to either a topological insulator or a 3D Dirac semimetal phase. Here we report a comprehensive experimental and theoretical study of both electronic and structural properties of $\mathrm{ZrTe_5}$, revealing that the bulk material is a strong topological insulator (STI). By means of angle-resolved photoelectron spectroscopy, we identify at the top of the valence band both a surface and a bulk state. The dispersion of these bands is well captured by ab initio calculations for the STI case, for the specific interlayer distance measured in our x-ray diffraction study. Furthermore, these findings are supported by scanning tunneling spectroscopy revealing the metallic character of the sample surface, thus confirming the strong topological nature of $\mathrm{ZrTe_5}$.
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Submitted 11 August, 2016;
originally announced August 2016.
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Discovery of Weyl semimetal state violating Lorentz invariance in MoTe2
Authors:
N. Xu,
Z. J. Wang,
A. P. Weber,
A. Magrez,
P. Bugnon,
H. Berger,
C. E. Matt,
J. Z. Ma,
B. B. Fu,
B. Q. Lv,
N. C. Plumb,
M. Radovic,
E. Pomjakushina,
K. Conder,
T. Qian,
J. H. Dil,
J. Mesot,
H. Ding,
M. Shi
Abstract:
A new type of Weyl semimetal state, in which the energy values of Weyl nodes are not the local extrema, has been theoretically proposed recently, namely type II Weyl semimetal. Distinguished from type I semimetal (e.g. TaAs), the Fermi surfaces in a type II Weyl semimetal consist of a pair of electron and hole pockets touching at the Weyl node. In addition, Weyl fermions in type II Weyl semimetals…
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A new type of Weyl semimetal state, in which the energy values of Weyl nodes are not the local extrema, has been theoretically proposed recently, namely type II Weyl semimetal. Distinguished from type I semimetal (e.g. TaAs), the Fermi surfaces in a type II Weyl semimetal consist of a pair of electron and hole pockets touching at the Weyl node. In addition, Weyl fermions in type II Weyl semimetals violate Lorentz invariance. Due to these qualitative differences distinct spectroscopy and magnetotransport properties are expected in type II Weyl semimetals. Here, we present the direct observation of the Fermi arc states in MoTe2 by using angle resolved photoemission spectroscopy. Two arc states are identified for each pair of Weyl nodes whoes surface projections of them possess single topological charge, which is a unique property for type II Weyl semimetals. The experimentally determined Fermi arcs are consistent with our first principle calculations. Our results unambiguously establish that MoTe2 is a type II Weyl semimetal, which serves as a great test bed to investigate the phenomena of new type of Weyl fermions with Lorentz invariance violated.
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Submitted 7 April, 2016;
originally announced April 2016.
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Ultrafast Optical Control of the Electronic Properties of $ZrTe_5$
Authors:
G. Manzoni,
A. Sterzi,
A. Crepaldi,
M. Diego,
F. Cilento,
M. Zacchigna,
Ph. Bugnon,
H. Berger,
A. Magrez,
M. Grioni,
F. Parmigiani
Abstract:
We report on the temperature dependence of the $ZrTe_5$ electronic properties, studied at equilibrium and out of equilibrium, by means of time and angle resolved photoelectron spectroscopy. Our results unveil the dependence of the electronic band structure across the Fermi energy on the sample temperature. This finding is regarded as the dominant mechanism responsible for the anomalous resistivity…
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We report on the temperature dependence of the $ZrTe_5$ electronic properties, studied at equilibrium and out of equilibrium, by means of time and angle resolved photoelectron spectroscopy. Our results unveil the dependence of the electronic band structure across the Fermi energy on the sample temperature. This finding is regarded as the dominant mechanism responsible for the anomalous resistivity observed at T* $\sim$ 160 K along with the change of the charge carrier character from holelike to electronlike. Having addressed these long-lasting questions, we prove the possibility to control, at the ultrashort time scale, both the binding energy and the quasiparticle lifetime of the valence band. These experimental evidences pave the way for optically controlling the thermoelectric and magnetoelectric transport properties of $ZrTe_5$.
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Submitted 14 January, 2016;
originally announced January 2016.
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The Role of Transport Agents in MoS2 Single Crystals
Authors:
Andrea Pisoni,
Jacim Jacimovic,
Osor S. Barišić,
Arnaud Walter,
Bálint Náfrádi,
Phillipe Bugnon,
Arnaud Magrez,
Helmuth Berger,
Zsolt Revay,
László Forró
Abstract:
We report resistivity, thermoelectric power and thermal conductivity of MoS2 single crystals prepared by chemical vapour transport (CVT) method using I2, Br2 and TeCl4 as transport agents. The material presents low-lying donor and acceptor levels, which dominate the in-plane charge transport. Intercalates into the Van der Waals gap strongly influence the inter-plane resistivity. Thermoelectric pow…
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We report resistivity, thermoelectric power and thermal conductivity of MoS2 single crystals prepared by chemical vapour transport (CVT) method using I2, Br2 and TeCl4 as transport agents. The material presents low-lying donor and acceptor levels, which dominate the in-plane charge transport. Intercalates into the Van der Waals gap strongly influence the inter-plane resistivity. Thermoelectric power displays the characteristics of strong electron-phonon interaction. Detailed theoretical model of thermal conductivity reveals the presence of high number of defects in the MoS2 structure. We show that these defects are inherent to CVT growth method, coming mostly from the transport agent molecules inclusion as identified by Total Reflection X-ray Fluorescence analysis (TXRF) and in-beam activation analysis (IBAA).
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Submitted 18 February, 2015;
originally announced February 2015.
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The momentum and photon energy dependence of the circular dichroic photoemission in the bulk Rashba semiconductors BiTeX (X = I, Br, Cl)
Authors:
A. Crepaldi,
F. Cilento,
M. Zacchigna,
M. Zonno,
J. C. Johannsen,
C. Tournier-Colletta,
L. Moreschini,
I. Vobornik,
F. Bondino,
E. Magnano,
H. Berger,
A. Magrez,
Ph. Bugnon,
G. Autés,
O. V. Yazyev,
M. Grioni,
F. Parmigiani
Abstract:
Bulk Rashba systems BiTeX (X = I, Br, Cl) are emerging as important candidates for develo** spintronics devices, because of the coexistence of spin-split bulk and surface states, along with the ambipolar character of the surface charge carriers. The need of studying the spin texture of strongly spin-orbit coupled materials has recently promoted circular dichroic Angular Resolved Photoelectron Sp…
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Bulk Rashba systems BiTeX (X = I, Br, Cl) are emerging as important candidates for develo** spintronics devices, because of the coexistence of spin-split bulk and surface states, along with the ambipolar character of the surface charge carriers. The need of studying the spin texture of strongly spin-orbit coupled materials has recently promoted circular dichroic Angular Resolved Photoelectron Spectroscopy (cd-ARPES) as an indirect tool to measure the spin and the angular degrees of freedom. Here we report a detailed photon energy dependent study of the cd-ARPES spectra in BiTeX (X = I, Br and Cl). Our work reveals a large variation of the magnitude and sign of the dichroism. Interestingly, we find that the dichroic signal modulates differently for the three compounds and for the different spin-split states. These findings show a momentum and photon energy dependence for the cd-ARPES signals in the bulk Rashba semiconductor BiTeX (X = I, Br, Cl). Finally, the outcome of our experiment indicates the important relation between the modulation of the dichroism and the phase differences between the wave-functions involved in the photoemission process. This phase difference can be due to initial or final state effects. In the former case the phase difference results in possible interference effects among the photo-electrons emitted from different atomic layers and characterized by entangled spin-orbital polarized bands. In the latter case the phase difference results from the relative phases of the expansion of the final state in different outgoing partial waves.
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Submitted 17 September, 2014;
originally announced September 2014.
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Momentum resolved spin dynamics of bulk and surface excited states in the topological insulator $\mathrm{Bi_{2}Se_{3}}$
Authors:
C. Cacho,
A. Crepaldi,
M. Battiato,
J. Braun,
F. Cilento,
M. Zacchigna,
M. C. Richter,
O. Heckmann,
E. Springate,
Y. Liu,
S. S. Dhesi,
H. Berger,
Ph. Bugnon,
K. Held,
M. Grioni,
H. Ebert,
K. Hricovini,
J. Minár,
F. Parmigiani
Abstract:
The prospective of optically inducing a spin polarized current for spintronic devices has generated a vast interest in the out-of-equilibrium electronic and spin structure of topological insulators (TIs). In this Letter we prove that only by measuring the spin intensity signal over several order of magnitude in spin, time and angle resolved photoemission spectroscopy (STAR-PES) experiments is it p…
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The prospective of optically inducing a spin polarized current for spintronic devices has generated a vast interest in the out-of-equilibrium electronic and spin structure of topological insulators (TIs). In this Letter we prove that only by measuring the spin intensity signal over several order of magnitude in spin, time and angle resolved photoemission spectroscopy (STAR-PES) experiments is it possible to comprehensively describe the optically excited electronic states in TIs materials. The experiments performed on $\mathrm{Bi_{2}Se_{3}}$ reveal the existence of a Surface-Resonance-State in the 2nd bulk band gap interpreted on the basis of fully relativistic ab-initio spin resolved photoemission calculations. Remarkably, the spin dependent relaxation of the hot carriers is well reproduced by a spin dynamics model considering two non-interacting electronic systems, derived from the excited surface and bulk states, with different electronic temperatures.
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Submitted 17 September, 2014;
originally announced September 2014.
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Unusual Shubnikov-de Haas oscillations in BiTeCl
Authors:
C. Martin,
A. V. Suslov,
S. Buvaev,
A. F. Hebard,
P. Bugnon,
H. Berger,
A. Magrez,
D. B. Tanner
Abstract:
We report measurements of Shubnikov-de Haas (SdH) oscillations in single crystals of BiTeCl at magnetic fields up to 31 T and at temperatures as low as 0.4 K. Two oscillation frequencies were resolved at the lowest temperatures, $F_{1}=65 \pm 4$ Tesla and $F_{2}=156 \pm 5$ Tesla. We also measured the infrared optical reflectance $\left(\cal R(ω)\right)$ and Hall effect; we propose that the two fre…
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We report measurements of Shubnikov-de Haas (SdH) oscillations in single crystals of BiTeCl at magnetic fields up to 31 T and at temperatures as low as 0.4 K. Two oscillation frequencies were resolved at the lowest temperatures, $F_{1}=65 \pm 4$ Tesla and $F_{2}=156 \pm 5$ Tesla. We also measured the infrared optical reflectance $\left(\cal R(ω)\right)$ and Hall effect; we propose that the two frequencies correspond respectively to the inner and outer Fermi sheets of the Rashba spin-split bulk conduction band. The bulk carrier concentration was $n_{e}\approx1\times10^{19}$ cm$^{-3}$ and the effective masses $m_{1}^{*}=0.20 m_{0}$ for the inner and $m_{2}^{*}=0.27 m_{0}$ for the outer sheet. Surprisingly, despite its low effective mass, we found that the amplitude of $F_{2}$ is very rapidly suppressed with increasing temperature, being almost undetectable above $T\approx4$ K.
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Submitted 24 July, 2014;
originally announced July 2014.
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Optical properties of BiTeBr and BiTeCl
Authors:
A. Akrap,
J. Teyssier,
A. Magrez,
P. Bugnon,
H. Berger,
A. B. Kuzmenko,
D. van der Marel
Abstract:
We present a comparative study of the optical properties - reflectance, transmission and optical conductivity - and Raman spectra of two layered bismuth-tellurohalides BiTeBr and BiTeCl at 300 K and 5 K, for light polarized in the a-b planes. Despite different space groups, the optical properties of the two compounds are very similar. Both materials are doped semiconductors, with the absorption ed…
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We present a comparative study of the optical properties - reflectance, transmission and optical conductivity - and Raman spectra of two layered bismuth-tellurohalides BiTeBr and BiTeCl at 300 K and 5 K, for light polarized in the a-b planes. Despite different space groups, the optical properties of the two compounds are very similar. Both materials are doped semiconductors, with the absorption edge above the optical gap which is lower in BiTeBr (0.62 eV) than in BiTeCl (0.77 eV). The same Rashba splitting is observed in the two materials. A non-Drude free carrier contribution in the optical conductivity, as well as three Raman and two infrared phonon modes, are observed in each compound. There is a dramatic difference in the highest infrared phonon intensity for the two compounds, and a difference in the do** levels. Aspects of the strong electron-phonon interaction are identified. Several interband transitions are assigned, among them the low-lying absorption $β$ which has the same value 0.25 eV in both compounds, and is caused by the Rashba spin splitting of the conduction band. An additional weak transition is found in BiTeCl, caused by the lower crystal symmetry.
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Submitted 20 June, 2014;
originally announced June 2014.
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Atomic and Electronic Structure of a Rashba $p$-$n$ Junction at the BiTeI Surface
Authors:
C. Tournier-Colletta,
G. Autès,
B. Kierren,
Ph. Bugnon,
H. Berger,
Y. Fagot-Revurat,
O. V. Yazyev,
M. Grioni,
D. Malterre
Abstract:
The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized $p$-$n$ junctions at the boundaries between domains with different surface terminations. We use scanning tunneling microscopy/spectroscopy (STM/STS) to locate such junctions and investigate their atomic…
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The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized $p$-$n$ junctions at the boundaries between domains with different surface terminations. We use scanning tunneling microscopy/spectroscopy (STM/STS) to locate such junctions and investigate their atomic and electronic properties. The Te- and I-terminated surfaces are identified owing to their distinct chemical reactivity, and an apparent height mismatch of electronic origin. The Rashba surface states are revealed in the STS spectra by the onset of a van Hove singularity at the band edge. Eventually, an electronic depletion is found on interfacial Te atoms, consistent with the formation of a space charge area in typical $p$-$n$ junctions.
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Submitted 23 January, 2014;
originally announced January 2014.
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Evidence of reduced surface electron-phonon scattering in the conduction band of Bi_{2}Se_{3} by non-equilibrium ARPES
Authors:
A. Crepaldi,
F. Cilento,
B. Ressel,
C. Cacho,
J. C. Johannsen,
M. Zacchigna,
H. Berger,
Ph. Bugnon,
C. Grazioli,
I. C. E. Turcu,
E. Springate,
K. Kern,
M. Grioni,
F. Parmigiani
Abstract:
The nature of the Dirac quasiparticles in topological insulators calls for a direct investigation of the electron-phonon scattering at the \emph{surface}. By comparing time-resolved ARPES measurements of the TI Bi_{2}Se_{3} with different probing depths we show that the relaxation dynamics of the electronic temperature of the conduction band is much slower at the surface than in the bulk. This obs…
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The nature of the Dirac quasiparticles in topological insulators calls for a direct investigation of the electron-phonon scattering at the \emph{surface}. By comparing time-resolved ARPES measurements of the TI Bi_{2}Se_{3} with different probing depths we show that the relaxation dynamics of the electronic temperature of the conduction band is much slower at the surface than in the bulk. This observation suggests that surface phonons are less effective in cooling the electron gas in the conduction band.
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Submitted 16 October, 2013;
originally announced October 2013.
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Ultrafast photodo** and effective Fermi-Dirac distribution of the Dirac particles in Bi2Se3
Authors:
A. Crepaldi,
B. Ressel,
F. Cilento,
M. Zacchigna,
C. Grazioli,
H. Berger,
Ph. Bugnon,
K. Kern,
M. Grioni,
F. Parmigiani
Abstract:
We exploit time- and angle- resolved photoemission spectroscopy to determine the evolution of the out-of-equilibrium electronic structure of the topological insulator Bi2Se. The response of the Fermi-Dirac distribution to ultrashort IR laser pulses has been studied by modelling the dynamics of the hot electrons after optical excitation. We disentangle a large increase of the effective temperature…
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We exploit time- and angle- resolved photoemission spectroscopy to determine the evolution of the out-of-equilibrium electronic structure of the topological insulator Bi2Se. The response of the Fermi-Dirac distribution to ultrashort IR laser pulses has been studied by modelling the dynamics of the hot electrons after optical excitation. We disentangle a large increase of the effective temperature T* from a shift of the chemical potential mu*, which is consequence of the ultrafast photodo** of the conduction band. The relaxation dynamics of T* and mu* are k-independent and these two quantities uniquely define the evolution of the excited charge population. We observe that the energy dependence of the non-equilibrium charge population is solely determined by the analytical form of the effective Fermi-Dirac distribution.
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Submitted 14 December, 2012;
originally announced December 2012.
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Giant ambipolar Rashba effect in a semiconductor: BiTeI
Authors:
A. Crepaldi,
L. Moreschini,
G. Autès,
C. Tournier-Colletta,
S. Moser,
N. Virk,
H. Berger,
Ph. Bugnon,
Y. J. Chang,
K. Kern,
A. Bostwick,
E. Rotenberg,
O. V. Yazyev,
M. Grioni
Abstract:
We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination. In both cases it intersects spin-polarized bands, in the corresponding surface depletion and accumulation layers. The momentum splitting of these bands is not af…
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We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination. In both cases it intersects spin-polarized bands, in the corresponding surface depletion and accumulation layers. The momentum splitting of these bands is not affected by adsorbate-induced changes in the surface potential. These findings demonstrate that two properties crucial for enabling semiconductor-based spin electronics -- a large, robust spin splitting and ambipolar conduction -- are present in this material.
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Submitted 7 May, 2012;
originally announced May 2012.
