The study of the efficiency of nitrogen to NV-center conversion in high nitrogen content samples
Authors:
S. V. Bolshedvorskii,
S. A. Tarelkin,
V. V. Soshenko,
I. S. Cojocaru,
O. R. Rubinas,
V. N. Sorokin,
V. G. Vins,
A. N. Smolyaninov,
S. G. Buga,
A. S. Galkin,
T. E. Drozdova,
M. S. Kuznetsov,
S. A. Nosukhin,
A. V. Akimov
Abstract:
The nitrogen-vacancy color center in diamond is one of the most important systems in the fast-growing field of sensing. This color centers are used in both high-resolution and high-sensitivity sensors. However, techniques for quick and efficient formations of this color center are still in the development stage. In this paper, we present a study on the influence of the electron irradiation dose on…
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The nitrogen-vacancy color center in diamond is one of the most important systems in the fast-growing field of sensing. This color centers are used in both high-resolution and high-sensitivity sensors. However, techniques for quick and efficient formations of this color center are still in the development stage. In this paper, we present a study on the influence of the electron irradiation dose on the conversion of substitutional nitrogen into $\text{N}{\text{V}^{-}}$ centers. The study was done on diamonds that were highly enriched with nitrogen (~100 ppm), which on one hand should maximize the effect of irradiation, and on another be of interest for high-sensitivity magnetometers. The maximum achieved conversion efficiency was as high as ${37\pm 3.7}$, with no observed saturation on the electron dose even with the simplest annealing procedure. The measurements of the corresponding dephasing time made it possible to estimate for shot-noise limited sensitivity per unit volume of a stationary field sensor with such a diamond to be ${9\pm 1\times {{10}^{-14}}\text{T}}/{\sqrt{\text{Hz}\cdot \text{m}{\text{m}^{-3}}}}\;$.
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Submitted 5 August, 2022;
originally announced August 2022.
Spatially controlled fabrication of single NV centers in IIa HPHT diamond
Authors:
S. D. Trofimov,
S. A. Tarelkin,
S. V. Bolshedvorskii,
V. S. Bormashov,
S. Yu. Troshchiev,
A. V. Golovanov,
N. V. Luparev,
D. D. Prikhodko,
K. N. Boldyrev,
S. A. Terentiev,
A. V. Akimov,
N. I. Kargin,
N. S. Kukin,
A. S. Gusev,
A. A. Shemukhin,
Yu. V. Balakshin,
S. G. Buga,
V. D. Blank
Abstract:
Single NV centers in HPHT IIa diamond are fabricated by helium implantation through lithographic masks. The concentrations of created NV centers in different growth sectors of HPHT are compared quantitatively. It is shown that the purest {001} growth sector (GS) of HPHT diamond allows to create groups of single NV centers in predetermined locations. The {001} GS HPHT diamond is thus considered a g…
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Single NV centers in HPHT IIa diamond are fabricated by helium implantation through lithographic masks. The concentrations of created NV centers in different growth sectors of HPHT are compared quantitatively. It is shown that the purest {001} growth sector (GS) of HPHT diamond allows to create groups of single NV centers in predetermined locations. The {001} GS HPHT diamond is thus considered a good material for applications that involve single NV centers.
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Submitted 4 December, 2019; v1 submitted 27 November, 2019;
originally announced November 2019.
