Quantum transport properties of industrial $^{28}$Si/$^{28}$SiO$_2$
Authors:
D. Sabbagh,
N. Thomas,
J. Torres,
R. Pillarisetty,
P. Amin,
H. C. George,
K. Singh,
A. Budrevich,
M. Robinson,
D. Merrill,
L. Ross,
J. Roberts,
L. Lampert,
L. Massa,
S. Amitonov,
J. Boter,
G. Droulers,
H. G. J. Eenink,
M. van Hezel,
D. Donelson,
M. Veldhorst,
L. M. K. Vandersypen,
J. S. Clarke,
G. Scappucci
Abstract:
We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of…
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We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of $1.75\times10^{11}$ cm$^{-2}$ and a peak mobility of 9800 cm$^2$/Vs are measured at a temperature of 1.7 K. The $^{28}$Si/$^{28}$SiO$_2$ interface is characterized by a roughness of $Δ=0.4$ nm and a correlation length of $Λ=3.4$ nm. An upper bound for valley splitting energy of 480 $μ$eV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale $^{28}$Si/$^{28}$SiO$_2$ as a promising material platform to manufacture industrial spin qubits.
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Submitted 21 January, 2019; v1 submitted 15 October, 2018;
originally announced October 2018.
