Showing 1–41 of 41 results for author: Buda-Prejbeanu, L

Fast current-induced skyrmion motion in synthetic antiferromagnets

Authors: Van Tuong Pham, Naveen Sisodia, Ilaria Di Manici, Joseba Urrestarazu-Larrañaga, Kaushik Bairagi, Johan Pelloux-Prayer, Rodrigo Guedas, Liliana Buda-Prejbeanu, Stéphane Auffret, Andrea Locatelli, Tevfik Onur Menteş, Stefania Pizzini, Pawan Kumar, Aurore Finco, Vincent Jacques, Gilles Gaudin, Olivier Boulle

Abstract: Magnetic skyrmions are topological magnetic textures that hold great promise as nanoscale bits of information in memory and logic devices. Although room-temperature ferromagnetic skyrmions and their current-induced manipulation have been demonstrated, their velocity has been limited to about 100 meters per second. In addition, their dynamics are perturbed by the skyrmion Hall effect, a motion tran… ▽ More Magnetic skyrmions are topological magnetic textures that hold great promise as nanoscale bits of information in memory and logic devices. Although room-temperature ferromagnetic skyrmions and their current-induced manipulation have been demonstrated, their velocity has been limited to about 100 meters per second. In addition, their dynamics are perturbed by the skyrmion Hall effect, a motion transverse to the current direction caused by the skyrmion topological charge. Here, we show that skyrmions in compensated synthetic antiferromagnets can be moved by current along the current direction at velocities of up to 900 meters per second. This can be explained by the cancellation of the net topological charge leading to a vanishing skyrmion Hall effect. Our results open an important path toward the realization of logic and memory devices based on the fast manipulation of skyrmions in tracks. △ Less

Submitted 19 April, 2024; originally announced April 2024.

Comments: The document includes the main text and the supplementary materials. This is the accepted version of the work published in Science, 384, 6693 (2024)

Journal ref: Science, 384, 6693 (2024)

Spin-torque nano-oscillator based on two in-plane magnetized synthetic ferrimagnets

Authors: E. Monteblanco, F. Garcia-Sanchez, M. Romera, D. Gusakova, L. D. Buda-Prejbeanu, U. Ebels

Abstract: We report the dynamic characterization of the spin-torque-driven in-plane precession modes of a spin-torque nano-oscillator based on two different synthetic ferrimagnets: a pinned one characterized by a strong RKKY interaction which is exchange coupled to an antiferromagnetic layer; and a second one, non-pinned characterized by weak RKKY coupling. The microwave properties associated with the stead… ▽ More We report the dynamic characterization of the spin-torque-driven in-plane precession modes of a spin-torque nano-oscillator based on two different synthetic ferrimagnets: a pinned one characterized by a strong RKKY interaction which is exchange coupled to an antiferromagnetic layer; and a second one, non-pinned characterized by weak RKKY coupling. The microwave properties associated with the steady-state precession of both SyFs are characterized by high spectral purity and power spectral density. However, frequency dispersion diagrams of the damped and spin transfer torque modes reveal drastically different dynamical behavior and microwave emission properties in both SyFs. In particular, the weak coupling between the magnetic layers of the non-pinned SyF raises discontinuous dispersion diagrams suggesting a strong influence of mode crossing. An interpretation of the different dynamical features observed in the damped and spin torque modes of both SyF systems was obtained by solving simultaneously, in a macrospin approach, a linearized version of the Landau-Lifshitz-Gilbert equation including the spin transfer torque term. △ Less

Submitted 1 February, 2024; v1 submitted 16 December, 2023; originally announced December 2023.

Comments: 16 pages, 8 figures

Journal ref: J. Appl. Phys. 135, 083901 (2024)

Dipolar coupled core-shell perpendicular shape anisotropy MTJ with enhanced write speed and reduced cross-talk

Authors: N. Caçoilo, L. D. Buda-Prejbeanu, B. Dieny, O. Fruchart, I. L. Prejbeanu

Abstract: The concept of Perpendicular Shape-Anisotropy Spin-Transfer-Torque Magnetic Random-Access Memory tackles the downsize scalability limit of conventional ultrathin magnetic tunnel junctions (MTJ) below sub-20 nm technological nodes. This concept uses a thicker storage layer with a vertical aspect ratio, enhancing the thermal stability factor thanks to the favorable contribution of the shape anisotro… ▽ More The concept of Perpendicular Shape-Anisotropy Spin-Transfer-Torque Magnetic Random-Access Memory tackles the downsize scalability limit of conventional ultrathin magnetic tunnel junctions (MTJ) below sub-20 nm technological nodes. This concept uses a thicker storage layer with a vertical aspect ratio, enhancing the thermal stability factor thanks to the favorable contribution of the shape anisotropy. However, the increased aspect ratio comes with an increase in switching time under applied voltage and the cross-over to non-uniform reversal mechanism at higher aspect ratio, limiting the gain in scalability. Additionally, the larger volume of the magnetic cell significantly increases the stray field acting on the neighboring devices compared to thin MTJs. In this work, we propose the use of a dipolar-coupled core-shell system as a storage layer. This improves both bottlenecks, as predicted by micromagnetic simulations for magnetisation reversal, and a macrospin model to estimate the stray field in a dense array. △ Less

Submitted 8 December, 2023; originally announced December 2023.

Comments: 11 pages, 11 figures,

Spiking Dynamics in Dual Free Layer Perpendicular Magnetic Tunnel Junctions

Authors: Louis Farcis, Bruno Teixeira, Philippe Talatchian, David Salomoni, Ursula Ebels, Stéphane Auffret, Bernard Dieny, Frank Mizrahi, Julie Grollier, Ricardo Sousa, Liliana Buda-Prejbeanu

Abstract: Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short and long term memory, non-linear fast response and relatively small footprint. Here we report how voltage driven magnetization dynamics of dual free layer perpendicular magnetic tunnel junctions enable to emulate spiking neurons in hardware. The output spikin… ▽ More Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short and long term memory, non-linear fast response and relatively small footprint. Here we report how voltage driven magnetization dynamics of dual free layer perpendicular magnetic tunnel junctions enable to emulate spiking neurons in hardware. The output spiking rate was controlled by varying the dc bias voltage across the device. The field-free operation of this two terminal device and its robustness against an externally applied magnetic field make it a suitable candidate to mimic neuron response in a dense Neural Network (NN). The small energy consumption of the device (4-16 pJ/spike) and its scalability are important benefits for embedded applications. This compact perpendicular magnetic tunnel junction structure could finally bring spiking neural networks (SNN) to sub-100nm size elements. △ Less

Submitted 14 September, 2023; originally announced September 2023.

Electrical detection and nucleation of a magnetic skyrmion in a magnetic tunnel junction observed via operando magnetic microscopy

Authors: by J. Urrestarazu Larrañaga, Naveen Sisodia, Van Tuong Pham, Ilaria Di Manici, Aurélien Masseboeuf, Kevin Garello, Florian Disdier, Bruno Fernandez, Sebastian Wintz, Markus Weigand, Mohamed Belmeguenai, Stefania Pizzini, Ricardo Sousa, Liliana Buda-Prejbeanu, Gilles Gaudin, Olivier Boulle

Abstract: Magnetic skyrmions are topological spin textures which are envisioned as nanometre scale information carriers in magnetic memory and logic devices. The recent demonstration of room temperature stabilization of skyrmions and their current induced manipulation in industry compatible ultrathin films were first steps towards the realisation of such devices. However, important challenges remain regardi… ▽ More Magnetic skyrmions are topological spin textures which are envisioned as nanometre scale information carriers in magnetic memory and logic devices. The recent demonstration of room temperature stabilization of skyrmions and their current induced manipulation in industry compatible ultrathin films were first steps towards the realisation of such devices. However, important challenges remain regarding the electrical detection and the low-power nucleation of skyrmions, which are required for the read and write operations. Here, we demonstrate, using operando magnetic microscopy experiments, the electrical detection of a single magnetic skyrmion in a magnetic tunnel junction (MTJ) and its nucleation and annihilation by gate voltage via voltage control of magnetic anisotropy. The nucleated skyrmion can be further manipulated by both gate voltage and external magnetic field, leading to tunable intermediate resistance states. Our results unambiguously demonstrate the readout and voltage controlled write operations in a single MTJ device, which is a major milestone for low power skyrmion based technologies. △ Less

Submitted 1 August, 2023; originally announced August 2023.

Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions

Authors: D. Salomoni, Y. Peng, L. Farcis, S. Auffret, M. Hehn, G. Malinowski, S. Mangin, B. Dieny, L. D. Buda-Prejbeanu, R. C. Sousa, I. L. Prejbeanu

Abstract: Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer or spin orbit torque. In this work we demonstrate successful field-free 50fs single laser pulse driven magnetization reversal of [Tb/Co] based storage layer in… ▽ More Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer or spin orbit torque. In this work we demonstrate successful field-free 50fs single laser pulse driven magnetization reversal of [Tb/Co] based storage layer in a perpendicular magnetic tunnel junction. The nanofabricated magnetic tunnel junction devices have an optimized bottom reference electrode and show Tunnel Magnetoresistance Ratio values (TMR) up to 74\% after patterning down to sub-100nm lateral dimensions. Experiments on continuous films reveal peculiar reversal patterns of concentric rings with opposite magnetic directions, above certain threshold fluence. These rings have been correlated to patterned device switching probability as a function of the applied laser fluence. Moreover, the magnetization reversal is independent on the duration of the laser pulse. According to our macrospin model, the underlying magnetization reversal mechanism can be attributed to an in-plane reorientation of the magnetization due to a fast reduction of the out-of-plane uniaxial anisotropy. These aspects are of great interest both for the physical understanding of the switching phenomenon and their consequences for all-optical-switching memory devices, since they allow for a large fluence operation window with high resilience to pulse length variability. △ Less

Submitted 24 May, 2023; originally announced May 2023.

In plane reorientation induced single laser pulse magnetization reversal in rare-earth based multilayer

Authors: Y. Peng, D. Salomoni, G. Malinowski, W. Zhang, J. Hohlfeld, L. D. Buda-Prejbeanu, J. Gorchon, M. Vergès, J. X. Lin, R. C. Sousa, I. L. Prejbeanu, S. Mangin, M. Hehn

Abstract: Single Pulse All Optical Helicity Independent Switching (AO-HIS) represents the ability to reverse the magnetic moment of a nanostructure using a femtosecond single laser pulse. It is an ultrafast method to manipulate magnetization without the use of any applied field. Since the first switching experiments carried on GdFeCo ferrimagnetic systems, single pulse AO-HIS has been restricted for a while… ▽ More Single Pulse All Optical Helicity Independent Switching (AO-HIS) represents the ability to reverse the magnetic moment of a nanostructure using a femtosecond single laser pulse. It is an ultrafast method to manipulate magnetization without the use of any applied field. Since the first switching experiments carried on GdFeCo ferrimagnetic systems, single pulse AO-HIS has been restricted for a while to Gd-based alloys or Gd/FM bilayers where FM is a ferromagnetic layer. Only recently has AO-HIS been extended to a few other materials: MnRuGa ferrimagnetic Heusler alloys and Tb/Co multilayers with a very specific range of thickness and composition. Here, we demonstrate that single pulse AO-HIS observed in Tb/Co results from a different mechanism than the one for Gd based samples and that it can be obtained for a large range of rare earth-transition metal (RE-TM) multilayers, making this phenomenon much more general. Surprisingly, in this large family of (RE-TM) multilayer systems, the threshold fluence for switching is observed to be independent of the pulse duration, up to at least 12 ps. Moreover, at high laser intensities, concentric ring domain structures are induced, unveiling multiple fluence thresholds. These striking switching features, which are in contrast to those of AO-HIS in GdFeCo alloys, concomitant with the demonstration of an in-plane reorientation of the magnetization, point towards an intrinsic precessional reversal mechanism. Our results allow expanding the variety of materials with tunable magnetic properties that can be integrated in complex heterostructures and provide a pathway to engineer materials for future applications based on all-optical control of magnetic order. △ Less

Submitted 26 December, 2022; originally announced December 2022.

Robust and programmable logic-in-memory devices exploiting skyrmion confinement and channeling using local energy barriers

Authors: Naveen Sisodia, Johan Pelloux-Prayer, Liliana D. Buda-Prejbeanu, Lorena Anghel, Gilles Gaudin, Olivier Boulle

Abstract: Magnetic skyrmions are promising candidates for logic-in-memory applications, intrinsically merging high density non-volatile data storage with computing capabilities, owing to their nanoscale size, fast motion, and mutual repulsions. However, concepts proposed so far suffer from reliability issues as well as inefficient conversion of magnetic information to electrical signals. In this paper, we p… ▽ More Magnetic skyrmions are promising candidates for logic-in-memory applications, intrinsically merging high density non-volatile data storage with computing capabilities, owing to their nanoscale size, fast motion, and mutual repulsions. However, concepts proposed so far suffer from reliability issues as well as inefficient conversion of magnetic information to electrical signals. In this paper, we propose a logic-in-memory device which exploits skyrmion confinement and channeling using anisotropy energy barriers to achieve reliable data storage and synchronous shift in racetracks combined with cascadable and reprogrammable logics relying purely on magnetic interactions. The device combines a racetrack shift register based on skyrmions confined in nanodots with Full Adder (FA) gates. The designed FA is reprogrammable and cascadable and can also be used to perform simple logic operations such as AND, OR, NOT, NAND, XOR and NXOR. The monolithic design of the logic gate and the absence of any complex electrical contacts makes the device ideal for integration with conventional CMOS circuitry. △ Less

Submitted 17 May, 2022; originally announced May 2022.

Journal ref: Phys. Rev. Applied 18, 014025 (2022)

Programmable skyrmion logic gates based on skyrmion tunneling

Authors: Naveen Sisodia, Johan Pelloux-Prayer, Liliana D. Buda-Prejbeanu, Lorena Anghel, Gilles Gaudin, Olivier Boulle

Abstract: Magnetic skyrmions are promising candidates as elementary nanoscale bits in logic-in-memory devices, intrinsically merging high density memory and computing capabilities. Here we exploit the dynamics of skyrmions interacting with anisotropy energy barriers patterned by ion irradiation to design programmable logic gates. Using micromagnetic simulations with experimental parameters, we show that a f… ▽ More Magnetic skyrmions are promising candidates as elementary nanoscale bits in logic-in-memory devices, intrinsically merging high density memory and computing capabilities. Here we exploit the dynamics of skyrmions interacting with anisotropy energy barriers patterned by ion irradiation to design programmable logic gates. Using micromagnetic simulations with experimental parameters, we show that a fine tuning of the barrier height and width allows the selective tunneling of skyrmions between parallel nanotracks triggered by skyrmion-skyrmion interaction. This can be leveraged to design skyrmion De-multiplexer (DMux) logic gate which works solely using skyrmions as logic inputs. By cascading and connecting demultiplexer gates with a specific topology, we develop a fully programmable logic gate capable of producing any possible logic output as a sum of all minterms generated by a given set of inputs without requiring any complex additional electric/magnetic interconversion. The proposed design is fully conservative and cascadable and paves a new pathway for full skyrmionic-based logic-in-memory devices. △ Less

Submitted 17 May, 2022; originally announced May 2022.

Journal ref: Phys. Rev. Applied 17, 064035 (2022)

Bifurcation analysis of strongly nonlinear injection locked spin torque oscillators

Authors: J. Hem, L. D. Buda-Prejbeanu, U. Ebels

Abstract: We investigate the dynamics of an injection locked in-plane uniform spin torque oscillator for several forcing configurations at large driving amplitudes. For the analysis, the spin wave amplitude equation is used to reduce the dynamics to a general oscillator equation in which the forcing is a complex valued function $F(p,ψ)\proptoε_1 (p)cos(ψ)+iε_2 (p)sin(ψ)$. Assuming that the oscillator is str… ▽ More We investigate the dynamics of an injection locked in-plane uniform spin torque oscillator for several forcing configurations at large driving amplitudes. For the analysis, the spin wave amplitude equation is used to reduce the dynamics to a general oscillator equation in which the forcing is a complex valued function $F(p,ψ)\proptoε_1 (p)cos(ψ)+iε_2 (p)sin(ψ)$. Assuming that the oscillator is strongly nonisochronous and/or forced by a power forcing $(|νε_1/ε_2 |\gg 1)$, we show that the parameters $ε_{1,2} (p)$ govern the main bifurcation features of the Arnold tongue diagram : (i) the locking range asymmetry is mainly controlled by $dε_1 (p)/dp$, (ii) the Taken-Bogdanov bifurcation occurs for a power threshold depending on $ε_{1,2} (p)$ and (iii) the frequency hysteretic range is related to the transient regime through the resonant frequency at zero mismatch frequency. Then, the model is compared with the macrospin simulation for driving amplitudes as large as $10^0-10^3 A/m$ for the magnetic field and $10^{10}-10^{12} A/m^2$ for the current density. As predicted by the model, the forcing configuration (nature of the driving signal, applied direction, the harmonic orders) affects substantially the oscillator dynamic. However, some discrepancies are observed. In particular, the prediction of the frequency and power locking range boundaries may be misestimated if the hysteretic boundaries are of same magnitude order. Moreover, the misestimation can be of two different types according if the bifurcation is Saddle node or Taken Bogdanov. These effects are a further manifestation of the complexity of the dynamics in nonisochronous auto-oscillators. △ Less

Submitted 9 April, 2022; originally announced April 2022.

Comments: 15 pages, 11 figures

Gate-controlled skyrmion and domain wall chirality

Authors: Charles-Elie Fillion, Johanna Fischer, Raj Kumar, Aymen Fassatoui, Stefania Pizzini, Laurent Ranno, Djoudi Ourdani, Mohamed Belmeguenai, Yves Roussigné, Salim-Mourad Chérif, Stéphane Auffret, Isabelle Joumard, Olivier Boulle, Gilles Gaudin, Liliana Buda-Prejbeanu, Claire Baraduc, Hélène Béa

Abstract: Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that a gate voltage can control this key… ▽ More Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that a gate voltage can control this key parameter. We probe the chirality of skyrmions and chiral domain walls by observing the direction of their current-induced motion and show that a gate voltage can reverse it. This local and dynamical reversal of the chirality is due to a sign inversion of the interfacial Dzyaloshinskii-Moriya interaction that we attribute to ionic migration of oxygen under gate voltage. Micromagnetic simulations show that the chirality reversal is a continuous transformation, in which the skyrmion is conserved. This control of chirality with 2 - 3 V gate voltage can be used for skyrmion-based logic devices, yielding new functionalities. △ Less

Submitted 7 September, 2022; v1 submitted 8 April, 2022; originally announced April 2022.

Comments: 4 figures

Journal ref: Nat Commun 13, 5257 (2022)

Skyrmions in synthetic antiferromagnets and their nucleation via electrical current and ultrafast laser illumination

Authors: Roméo Juge, Naveen Sisodia, Joseba Urrestarazu Larrañaga, Qiang Zhang, Van Tuong Pham, Kumari Gaurav Rana, Brice Sarpi, Nicolas Mille, Stefan Stanescu, Rachid Belkhou, Mohamad-Assaad Mawass, Nina Novakovic-Marinkovic, Florian Kronast, Markus Weigand, Joachim Gräfe, Sebastian Wintz, Simone Finizio, Jörg Raabe, Lucia Aballe, Michael Foerster, Mohamed Belmeguenai, Liliana Buda-Prejbeanu, Justin M. Shaw, Hans T. Nembach, Laurent Ranno , et al. (2 additional authors not shown)

Abstract: Magnetic skyrmions are topological spin textures that hold great promise as nanoscale information carriers in non-volatile memory and logic devices. While room-temperature magnetic skyrmions and their current-induced manipulation were recently demonstrated, the stray field resulting from their finite magnetization as well as their topological charge limit their minimum size and reliable motion in… ▽ More Magnetic skyrmions are topological spin textures that hold great promise as nanoscale information carriers in non-volatile memory and logic devices. While room-temperature magnetic skyrmions and their current-induced manipulation were recently demonstrated, the stray field resulting from their finite magnetization as well as their topological charge limit their minimum size and reliable motion in tracks. Antiferromagnetic (AF) skyrmions allow these limitations to be lifted owing to their vanishing magnetization and net zero topological charge, promising room-temperature, ultrasmall skyrmions, fast dynamics, and insensitivity to external magnetic fields. While room-temperature AF spin textures have been recently demonstrated, the observation and controlled nucleation of AF skyrmions operable at room temperature in industry-compatible synthetic antiferromagnetic (SAF) material systems is still lacking. Here we demonstrate that isolated skyrmions can be stabilized at zero field and room temperature in a fully compensated SAF. Using X-ray microscopy techniques, we are able to observe the skyrmions in the different SAF layers and demonstrate their antiparallel alignment. The results are substantiated by micromagnetic simulations and analytical models using experimental parameters, which confirm the chiral SAF skyrmion spin texture and allow the identification of the physical mechanisms that control the SAF skyrmion size and stability. We also demonstrate the local nucleation of SAF skyrmions via local current injection as well as ultrafast laser excitations at zero field. These results will enable the utilization of SAF skyrmions in skyrmion-based devices. △ Less

Submitted 23 November, 2021; originally announced November 2021.

Journal ref: Nature Communications, 13, 4807 (2022)

Stabilization of phase noise in spin torque nano oscillators by a phase locked loop

Authors: Steffen Wittrock, Martin Kreißig, Bertrand Lacoste, Artem Litvinenko, Philippe Talatchian, Florian Protze, Frank Ellinger, Ricardo Ferreira, Romain Lebrun, Paolo Bortolotti, Liliana Buda-Prejbeanu, Ursula Ebels, Vincent Cros

Abstract: The main limitation in order to exploit spin torque nano-oscillators (STNOs) in various potential applications is their large phase noise. In this work, we demonstrate its efficient reduction by a highly reconfigurable, compact, specifically on-chip designed PLL based on custom integrated circuits. First, we thoroughly study the parameter space of the PLL+STNO system experimentally. Second, we pre… ▽ More The main limitation in order to exploit spin torque nano-oscillators (STNOs) in various potential applications is their large phase noise. In this work, we demonstrate its efficient reduction by a highly reconfigurable, compact, specifically on-chip designed PLL based on custom integrated circuits. First, we thoroughly study the parameter space of the PLL+STNO system experimentally. Second, we present a theory which describes the locking of a STNO to an external signal in a general sense. In our developed theory, we do not restrict ourselves to the case of a perfect phase locking but also consider phase slips and the corresponding low offset frequency $1/f^2$ noise, so far the main drawback in such systems. Combining experiment and theory allows us to reveal complex parameter dependences of the system's phase noise. The results provide an important step for the optimization of noise properties and thus leverage the exploitation of STNOs in prospective real applications. △ Less

Submitted 25 October, 2021; originally announced October 2021.

Mutual Synchronization of Spin-Torque Oscillators within a Ring Array

Authors: M. A. Castro, D. Mancilla-Almonacid, B. Dieny, S. Allende, L. D. Buda-Prejbeanu, U. Ebels

Abstract: An array of spin torque nano-oscillators (STNOs), coupled by dipolar interaction and arranged on a ring, has been studied numerically and analytically. The phase patterns and locking ranges are extracted as a function of the number $N$, their separation, and the current density mismatch between selected subgroups of STNOs. If $N\geq 6$ for identical current densities through all STNOs, two degener… ▽ More An array of spin torque nano-oscillators (STNOs), coupled by dipolar interaction and arranged on a ring, has been studied numerically and analytically. The phase patterns and locking ranges are extracted as a function of the number $N$, their separation, and the current density mismatch between selected subgroups of STNOs. If $N\geq 6$ for identical current densities through all STNOs, two degenerated modes are identified an in-phase mode (all STNOs have the same phase) and an out-of-phase mode (the phase makes a 2$π$ turn along the ring). When inducing a current density mismatch between two subgroups, additional phase shifts occur. The locking range (maximum current density mismatch) of the in-phase mode is larger than the one for the out-of-phase mode and depends on the number $N$ of STNOs on the ring as well as on the separation. These results can be used for the development of magnetic devices that are based on STNO arrays. △ Less

Submitted 9 August, 2021; originally announced August 2021.

All-optical spin switching probability in [Tb/Co] multilayers

Authors: Luis Avilés-Félix, Louis Farcis, Zebin **, Laura Álvaro-Gómez, Gunqiao Li, Kihiro T. Yamada, Andrei Kirilyuk, Aleksey V. Kimel, Theo Rasing, Bernard Dieny, Ricardo C. Sousa, Ioan-Lucian Prejbeanu, Liliana D. Buda-Prejbeanu

Abstract: Since the first experimental observation of all-optical switching phenomena, intensive research has been focused on finding suitable magnetic systems that can be integrated as storage elements within spintronic devices and whose magnetization can be controlled through ultra-short single laser pulses. We report here atomistic spin simulations of all-optical switching in multilayered structures alte… ▽ More Since the first experimental observation of all-optical switching phenomena, intensive research has been focused on finding suitable magnetic systems that can be integrated as storage elements within spintronic devices and whose magnetization can be controlled through ultra-short single laser pulses. We report here atomistic spin simulations of all-optical switching in multilayered structures alternating n monolayers of Tb and m monolayers of Co. By using a two temperature model, we numerically calculate the thermal variation of the magnetization of each sublattice as well as the magnetization dynamics of [Tbn/Com] multilayers upon incidence of a single laser pulse. In particular, the condition to observe thermally-induced magnetization switching is investigated upon varying systematically both the composition of the sample (n,m) and the laser fluence. The samples with one monolayer of Tb as [Tb1/Co2] and [Tb1/Co3] are showing thermally induced magnetization switching above a fluence threshold. The reversal mechanism is mediated by the residual magnetization of the Tb lattice while the Co is fully demagnetized in agreement with the models developed for ferrimagnetic alloys. The switching is however not fully deterministic but the error rate can be tuned by the dam** parameter. Increasing the number of monolayers the switching becomes completely stochastic. The intermixing at the Tb/Co interfaces appears to be a promising way to reduce the stochasticity. These results predict for the first time the possibility of TIMS in [Tb/Co] multilayers and suggest the occurrence of sub-picosecond magnetization reversal using single laser pulses. △ Less

Submitted 8 March, 2021; originally announced March 2021.

Comments: 9 pages, 4 figures

Magnetization reversal driven by spin-transfer-torque in perpendicular shape anisotropy magnetic tunnel junctions

Authors: N. Caçoilo, S. Lequeux, B. M. S. Teixeira, B. Dieny, R. C. Sousa, N. A. Sobolev, O. Fruchart, I. L. Prejbeanu, L. D. Buda-Prejbeanu

Abstract: The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape anisotropy in the magnetic storage layer. Making use of that contribution, the downsize scalability of the STT-MRAM may be extended towards sub-20 nm technologica… ▽ More The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape anisotropy in the magnetic storage layer. Making use of that contribution, the downsize scalability of the STT-MRAM may be extended towards sub-20 nm technological nodes, thanks to a reinforcement of the thermal stability factor $Δ$. Although the larger storage layer thickness improves $Δ$, it is expected to negatively impact the writing current and switching time. Hence, optimization of the cell dimensions (diameter, thickness) is of utmost importance for attaining a sufficiently high $Δ$ while kee** a moderate writing current. Micromagnetic simulations were carried out for different pillar thicknesses of fixed lateral size 20 nm. The switching time and the reversal mechanism were analysed as a function of the applied voltage and aspect-ratio (AR) of the storage layer. For AR $<$ 1, the magnetization reversal resembles a macrospin-like mechanism, while for AR $>$ 1 a non-coherent reversal is observed, characterized by the nucleation of a transverse domain wall at the ferromagnet/insulator interface which then propagates along the vertical axis of the pillar. It was further observed that the inverse of the switching time is linearly dependent on the applied voltage. This study was extended to sub-20 nm width with a value of $Δ$ around 80. It was observed that the voltage necessary to reverse the magnetic layer increases as the lateral size is reduced, accompanied with a transition from macrospin-reversal to a buckling-like reversal at high aspect-ratios. △ Less

Submitted 21 April, 2021; v1 submitted 12 May, 2020; originally announced May 2020.

Comments: 7 pages with a total of 8 figures

Journal ref: Phys. Rev. Applied 16, 024020 (2021)

Realizing an Isotropically Coercive Magnetic Layer for Memristive Applications by Analogy to Dry Friction

Authors: Marco Mansueto, Antoine Chavent, Stephane Auffret, Isabelle Joumard, Jayshankar Nath, Ioan M. Miron, Ursula Ebels, Ricardo C. Sousa, Liliana D. Buda-Prejbeanu, Ioan L. Prejbeanu, Bernard Dieny

Abstract: We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the two magnetic electrodes in in-plane magnetized tunnel junctions. For this, it is necessary to design a free layer whose magnetization can be stabilized along several or even any in-plane direction between the parallel an… ▽ More We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the two magnetic electrodes in in-plane magnetized tunnel junctions. For this, it is necessary to design a free layer whose magnetization can be stabilized along several or even any in-plane direction between the parallel and the antiparallel magnetic configurations. We experimentally show that this can be achieved by exploiting antiferromagnet-ferromagnet exchange interactions in a regime where the antiferromagnet is thin enough to induce enhanced coercivity and no exchange bias. The frustration of exchange interactions at the interfaces due to competing ferro- and antiferromagnetic interactions is at the origin of an isotropic dissipation mechanism yielding isotropic coercivity. From a modeling point of view, it is shown that this isotropic dissipation can be described by a dry friction term in the Landau-Lifshitz-Gilbert equation. The influence of this dry friction term on the magnetization dynamics of an in-plane magnetized layer submitted to a rotating in-plane field is investigated both analytically and numerically. The possibility to control the free layer magnetization orientation in an in-plane magnetized magnetic tunnel junction by using the spin transfer torque from an additional perpendicular polarizer is also investigated through macrospin simulation. It is shown that the memristor function can be achieved by the injection of current pulses through the stack in the presence of an in-plane static field transverse to the reference layer magnetization, the aim of which is to limit the magnetization rotation between 0° and 180°. △ Less

Submitted 19 March, 2020; originally announced March 2020.

Comments: 24 pages, 9 figures

Room temperature skyrmions at zero field in exchange-biased ultrathin films

Authors: K. Gaurav Rana, A. Finco, F. Fabre, S. Chouaieb, A. Haykal, L. D. Buda-Prejbeanu, O. Fruchart, S. Le Denmat, P. David, M. Belmeguenai, T. Denneulin, R. E. Dunin-Borkowski, G. Gaudin, V. Jacques, O. Boulle

Abstract: We demonstrate that magnetic skyrmions with a mean diameter around 60 nm can be stabilized at room temperature and zero external magnetic field in an exchange-biased Pt/Co/NiFe/IrMn multilayer stack. This is achieved through an advanced optimization of the multilayer stack composition in order to balance the different magnetic energies controlling the skyrmion size and stability. Magnetic imaging… ▽ More We demonstrate that magnetic skyrmions with a mean diameter around 60 nm can be stabilized at room temperature and zero external magnetic field in an exchange-biased Pt/Co/NiFe/IrMn multilayer stack. This is achieved through an advanced optimization of the multilayer stack composition in order to balance the different magnetic energies controlling the skyrmion size and stability. Magnetic imaging is performed both with magnetic force microscopy and scanning Nitrogen-Vacancy magnetometry, the latter providing unambiguous measurements at zero external magnetic field. In such samples, we show that exchange bias provides an immunity of the skyrmion spin texture to moderate external magnetic field, in the tens of mT range, which is an important feature for applications as memory devices. These results establish exchange-biased multilayer stacks as a promising platform towards the effective realization of memory and logic devices based on magnetic skyrmions. △ Less

Submitted 28 January, 2020; v1 submitted 3 January, 2020; originally announced January 2020.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Applied 13, 044079 (2020)

Macrospin analysis of RF excitations within fully perpendicular magnetic tunnel junctions with second order easy-axis magnetic anisotropy contribution

Authors: Alexandru Atitoaie, Ioana Firastrau, Liliana D. Buda-Prejbeanu, Ursula Ebels, Marius Volmer

Abstract: The conditions of field and voltage for inducing steady state excitations in fully perpendicular magnetic tunnel junctions (pMTJs), adapted for memory applications, were numerically investigated by the resolution of the Landau-Lifshitz-Gilbert equation in the macrospin approach. Both dam**-like and the field-like spin transfer torque terms were taken into account in the simulations, as well as t… ▽ More The conditions of field and voltage for inducing steady state excitations in fully perpendicular magnetic tunnel junctions (pMTJs), adapted for memory applications, were numerically investigated by the resolution of the Landau-Lifshitz-Gilbert equation in the macrospin approach. Both dam**-like and the field-like spin transfer torque terms were taken into account in the simulations, as well as the contribution of the second order uniaxial anisotropy term (K2), which has been recently revealed in MgO-based pMTJs. An in-plane applied magnetic field balances the out of plane symmetry of the pMTJ and allows the signal detection. Using this model, we assessed the states of the free layer magnetization as a function of strength of K2 and polar theta_H angle of the applied field (varied from 90 to 60 deg.). There are two stable states, with the magnetization in-plane or out of plane of the layer, and two dynamic states with self-sustained oscillations, called in-plane precession state (IPP) or out of plane precession state (OPP). The IPP mode, with oscillation frequencies up to 7 GHz, appears only for positive voltages if theta_H = 90 deg. However, it shows a more complex distribution when the field is slightly tilted out of plane. The OPP mode is excited only if K2 is considered and reaches a maximum oscillation frequency of 15 GHz. Large areas of dynamic states with high frequencies are obtained for strong values of the field-like torque and K2, when applying a slightly tilted external field toward the out of plane direction. The non-zero temperature does not modify the phase diagrams, but reduces drastically the power spectral density peak amplitudes. △ Less

Submitted 6 September, 2019; originally announced September 2019.

Comments: 31 pages with figures and figure captions, 5 figures, article

Journal ref: Journal of Applied Physics 124(9):093902(2018)

Current-Driven Skyrmion Dynamics and Drive-Dependent Skyrmion Hall Effect in an Ultrathin Film

Authors: Roméo Juge, Soong-Geun Je, Dayane de Souza Chaves, Liliana D. Buda-Prejbeanu, José Peña-Garcia, Jayshankar Nath, Ioan Mihai Miron, Kumari Gaurav Rana, Lucia Aballe, Michael Foerster, Francesca Genuzio, Tevfik Onur Menteş, Andrea Locatelli, Francesco Maccherozzi, Sarnjeet S. Dhesi, Mohamed Belmeguenai, Yves Roussigné, Stéphane Auffret, Stefania Pizzini, Gilles Gaudin, Jan Vogel, Olivier Boulle

Abstract: Magnetic skyrmions are chiral spin textures that hold great promise as nanoscale information carriers. Since their first observation at room temperature, progress has been made in their current-induced manipulation, with fast motion reported in stray-field-coupled multilayers. However, the complex spin textures with hybrid chiralities and large power dissipation in these multilayers limit their pr… ▽ More Magnetic skyrmions are chiral spin textures that hold great promise as nanoscale information carriers. Since their first observation at room temperature, progress has been made in their current-induced manipulation, with fast motion reported in stray-field-coupled multilayers. However, the complex spin textures with hybrid chiralities and large power dissipation in these multilayers limit their practical implementation and the fundamental understanding of their dynamics. Here, we report on the current-driven motion of Néel skyrmions with diameters in the 100-nm range in an ultrathin Pt/Co/MgO trilayer. We find that these skyrmions can be driven at a speed of 100 m/s and exhibit a drive-dependent skyrmion Hall effect, which is accounted for by the effect of pinning. Our experiments are well substantiated by an analytical model of the skyrmion dynamics as well as by micromagnetic simulations including material inhomogeneities. This good agreement is enabled by the simple skyrmion spin structure in our system and a thorough characterization of its static and dynamical properties. △ Less

Submitted 9 October, 2019; v1 submitted 17 April, 2019; originally announced April 2019.

Comments: 9 pages, 4 figures + Supplementary Information (12 pages, 9 figures)

Journal ref: Phys. Rev. Applied 12, 044007 (2019)

Highly thermally stable sub-20nm magnetic random-access memory based on perpendicular shape anisotropy

Authors: N. Perrissin, S. Lequeux, N. Strelkov, L. Vila, L. Buda-Prejbeanu, S. Auffret, R. C. Sousa, I. L. Prejbeanu, B. Dieny

Abstract: A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ in order to induce a perpendicular shape anisotropy (PSA) in this layer. This PSA is obtained by depositing a thick ferromagnetic (FM) layer on top o… ▽ More A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ in order to induce a perpendicular shape anisotropy (PSA) in this layer. This PSA is obtained by depositing a thick ferromagnetic (FM) layer on top of an MgO/FeCoB based magnetic tunnel junction (MTJ) so that the thickness of the storage layer becomes of the order or larger than the diameter of the MTJ pillar. In contrast to conventional spin transfer torque magnetic random access memory (STT-MRAM) wherein the demagnetizing energy opposes the interfacial perpendicular magnetic anisotropy (iPMA), in these novel memory cells, both PSA and iPMA contributions favor out-of-plane orientation of the storage layer magnetization. Using thicker storage layers in these PSA-STT-MRAM has several advantages. Thanks to the PSA, very high and easily tunable thermal stability factors can be achieved, even down to sub-10 nm diameters. Moreover, low dam** material can be used for the thick FM material thus leading to a reduction of the write current. The paper describes this new PSA-STT-MRAM concept, practical realization of such memory arrays, magnetic characterization demonstrating thermal stability factor above 200 for MTJs as small as 8nm in diameter and possibility to maintain thermal stability factor above 60 down to 4nm diameter. △ Less

Submitted 7 March, 2018; originally announced March 2018.

Frequency shift keying by current modulation in a MTJ-based STNO with high data rate

Authors: A. Ruiz-Calaforra, A. Purbawati, T. Brächer, J. Hem, C. Murapaka, E. Jiménez, D. Mauri, A. Zeltser, J. A. Katine, M. -C. Cyrille, L. D. Buda-Prejbeanu, U. Ebels

Abstract: Spin torque nano-oscillators are nanoscopic microwave frequency generators which excel due to their large frequency tuning range and agility for amplitude and frequency modulation. Due to their compactness, they are regarded as suitable candidates for applications in wireless communications, where cost-effective and CMOS-compatible standalone devices are required. In this work, we study the abilit… ▽ More Spin torque nano-oscillators are nanoscopic microwave frequency generators which excel due to their large frequency tuning range and agility for amplitude and frequency modulation. Due to their compactness, they are regarded as suitable candidates for applications in wireless communications, where cost-effective and CMOS-compatible standalone devices are required. In this work, we study the ability of a magnetic-tunnel-junction (MTJ) based spin torque nano-oscillator to respond to a binary input sequence encoded in a square-shaped current pulse for its application as a frequency-shift-keying (FSK) based emitter. We demonstrate that below the limit imposed by the spin torque nano-oscillators intrinsic relaxation frequency, an agile variation between discrete oscillator states is possible. For this kind of devices, we demonstrate FSK up to data rates of 400 Mbps which is well suited for the application of such scillators in wireless networks. △ Less

Submitted 14 July, 2017; originally announced July 2017.

Injection locking at 2f of spin torque oscillators under influence of thermal noise

Authors: M. Tortarolo, B. Lacoste, J. Hem, C. Dieudonné, M. -C. Cyrille, J. A. Katine, D. Mauri, A. Zeltser, L. D. Buda-Prejbeanu, U. Ebels

Abstract: Experiments, numerical simulations and an analytic model were developed to elucidate the effects of noise in the synchronized state of a tunnel junction based spin torque nano oscillator (STNO). It is demonstrated that in the in plane magnetized structure, while the frequency is locked, much higher reference currents are needed to reduce the noise by phase locking. Our analysis shows that it is po… ▽ More Experiments, numerical simulations and an analytic model were developed to elucidate the effects of noise in the synchronized state of a tunnel junction based spin torque nano oscillator (STNO). It is demonstrated that in the in plane magnetized structure, while the frequency is locked, much higher reference currents are needed to reduce the noise by phase locking. Our analysis shows that it is possible to control the phase noise by the reference microwave current (IRF) and that it can be further reduced by increasing the bias current (IDC) of the oscillator, kee** the reference current in feasible limits for applications. △ Less

Submitted 19 June, 2017; originally announced June 2017.

Magnetic skyrmions in confined geometries : effect of the magnetic field and the disorder

Authors: Roméo Juge, Soong-Geun Je, Dayane de Souza Chaves, Stefania Pizzini, Liliana D. Buda-Prejbeanu, Lucia Aballe, Michael Foerster, Andrea Locatelli, Tevfik Onur Menteş, Alessandro Sala, Francesco Maccherozzi, Sarnjeet S. Dhesi, Stéphane Auffret, Gilles Gaudin, Jan Vogel, Olivier Boulle

Abstract: We report on the effect of the lateral confinement and a perpendicular magnetic field on isolated room-temperature magnetic skyrmions in sputtered Pt/Co/MgO nanotracks and nanodots. We show that the skyrmions size can be easily tuned by playing on the lateral dimensions of the nanostructures and by using external magnetic field amplitudes of a few mT, which allow to reach sub-100 nm diameters. Our… ▽ More We report on the effect of the lateral confinement and a perpendicular magnetic field on isolated room-temperature magnetic skyrmions in sputtered Pt/Co/MgO nanotracks and nanodots. We show that the skyrmions size can be easily tuned by playing on the lateral dimensions of the nanostructures and by using external magnetic field amplitudes of a few mT, which allow to reach sub-100 nm diameters. Our XMCD-PEEM observations also highlight the important role of the pinning on the skyrmions size and stability under an out-of-plane magnetic field. Micromagnetic simulations reveal that the effect of local pinning can be well accounted for by considering the thin film grain structure with local anisotropy variations and reproduce well the dependence of the skyrmion diameter on the magnetic field and the geometry. △ Less

Submitted 13 June, 2017; v1 submitted 6 June, 2017; originally announced June 2017.

Comments: 17 pages, 4 figures

Synthetic ferrimagnet spin transfer torque oscillator: model and non-linear properties

Authors: Bertrand Lacoste, Miguel Romera, Ursula Ebels, Liliana Buda-Prejbeanu

Abstract: The non-linear parameters of spin-torque oscillators based on a synthetic ferrimagnet free layer (two coupled layers) are computed. The analytical expressions are compared to macrospin simulations in the case of a synthetic ferrimagnet excited by a current spin-polarized by an external fixed layer. It is shown that, of the two linear modes, acoustic and optical, only one is excited at a time, and… ▽ More The non-linear parameters of spin-torque oscillators based on a synthetic ferrimagnet free layer (two coupled layers) are computed. The analytical expressions are compared to macrospin simulations in the case of a synthetic ferrimagnet excited by a current spin-polarized by an external fixed layer. It is shown that, of the two linear modes, acoustic and optical, only one is excited at a time, and therefore the self-sustained oscillations are similar to the dynamics of a single layer. However, the non-linear parameters values can be controlled by the parameters of the synthetic ferrimagnet. With a strong coupling between the two layers and asymmetric layers (different thicknesses), it is demonstrated that the non-linear frequency shift can be reduced, which results in the reduction of the linewidth of the power spectral density. For a particular applied field, the non-linear parameter can even vanish; this corresponds to a transition between a red-shift and a blue-shift frequency dependence on the current and a linewidth reduction to the linear linewidth value. △ Less

Submitted 3 May, 2017; originally announced May 2017.

Influence of interlayer coupling on the spin torque driven excitations in a spin torque oscillator

Authors: M. Romera, E. Monteblanco, F. Garcia-Sanchez, B. Delaet, L. D. Buda-Prejbeanu, U. Ebels

Abstract: The influence of dynamic interlayer interactions on the spin torque driven and damped excitations are illustrated for a three layer macrospin model system that corresponds to a standard spin-torque oscillator. The free layer and a synthetic antiferromagnetic (SyF) pinned layer of the spin-torque oscillator are in-plane magnetized. In order to understand experimental results, numerical simulations… ▽ More The influence of dynamic interlayer interactions on the spin torque driven and damped excitations are illustrated for a three layer macrospin model system that corresponds to a standard spin-torque oscillator. The free layer and a synthetic antiferromagnetic (SyF) pinned layer of the spin-torque oscillator are in-plane magnetized. In order to understand experimental results, numerical simulations have been performed considering three types of interlayer interactions: exchange interaction between the two magnetic layers of the SyF, mutual spin torque between the top layer of the SyF and the free layer and dipolar interaction between all three magnetic layers. It will be shown that the dynamic dipolar coupling plays a predominant role. First, it leads to a hybridization of the free layer and the SyF linear modes and through this gives rise to a strong field dependence of the critical current. In particular, there is a field range of enhanced dam** in which much higher current is required to drive the modes into steady state. This results in a gap in the excitation spectrum. Second, the dynamic dipolar interaction is also responsible for the non-linear interaction between the current driven steady state mode and the damped modes of the system. Here one can distinguish: (i) a resonant interaction that leads to a kink in the frequency-field and frequency-current dispersions accompanied by a small hysteresis and a reduction of the linewidth of the steady state mode and (ii) a non-resonant interaction that leads to a strong frequency redshift of the damped mode. The results underline the strong impact of interlayer coupling on the excitation spectra of spin-torque oscillators and illustrate in a simple three mode model system how in the non-linear regime the steady state and damped modes influence each other. △ Less

Submitted 24 January, 2017; originally announced January 2017.

Journal ref: Phys. Rev. B 95, 094433 (2017)

Spin torque driven dynamics of a coupled two layer structure: interplay between conservative and dissipative coupling

Authors: M. Romera, B. Lacoste, U. Ebels, L. D. Buda-Prejbeanu

Abstract: In this manuscript the general concepts of spin wave theory are adapted to the dynamics of a self-polarized system based on two layers coupled via interlayer exchange (conservative coupling) and mutual spin torque (dissipative coupling). An analytical description of the non-linear dynamics is proposed and validated through numerical simulations. In contrast to the single layer model, the phase equ… ▽ More In this manuscript the general concepts of spin wave theory are adapted to the dynamics of a self-polarized system based on two layers coupled via interlayer exchange (conservative coupling) and mutual spin torque (dissipative coupling). An analytical description of the non-linear dynamics is proposed and validated through numerical simulations. In contrast to the single layer model, the phase equation of the coupled system has a contribution coming from the dissipative part of the LLGS equation. It is shown that this is a major contribution to the frequency mandatory to describe well the most basic features of the dynamics of coupled systems. Using the proposed model a specific feature of coupled dynamics is addressed: the redshift to blueshift transition observed in the frequency current dependence of this kind of exchange coupled systems upon increasing the applied field. It is found that the blueshift regime can only occur in a region of field where the two linear eigenmodes contribute equally to the steady state mode (i.e. high mode hybridization). Finally, a general perturbed Hamiltonian equation for the coupled system is proposed. △ Less

Submitted 29 January, 2016; originally announced January 2016.

Comments: 16 pages, 7 figues

Journal ref: Phys. Rev. B 94, 094432 (2016)

Room temperature chiral magnetic skyrmion in ultrathin magnetic nanostructures

Authors: Olivier Boulle, Jan Vogel, Hongxin Yang, Stefania Pizzini, Dayane de Souza Chaves, Andrea Locatelli, Tevfik Onur Menteş Alessandro Sala, Liliana D. Buda-Prejbeanu, Olivier Klein, Mohamed Belmeguenai, Yves Roussigné, Andrey Stashkevich, Salim Mourad Chérif, Lucia Aballe, Michael Foerster, Mairbek Chshiev, Stéphane Auffret, Ioan Mihai Miron, Gilles Gaudin

Abstract: Magnetic skyrmions are chiral spin structures with a whirling configuration. Their topological properties, nanometer size and the fact that they can be moved by small current densities have opened a new paradigm for the manipulation of magnetisation at the nanoscale. To date, chiral skyrmion structures have been experimentally demonstrated only in bulk materials and in epitaxial ultrathin films an… ▽ More Magnetic skyrmions are chiral spin structures with a whirling configuration. Their topological properties, nanometer size and the fact that they can be moved by small current densities have opened a new paradigm for the manipulation of magnetisation at the nanoscale. To date, chiral skyrmion structures have been experimentally demonstrated only in bulk materials and in epitaxial ultrathin films and under external magnetic field or at low temperature. Here, we report on the observation of stable skyrmions in sputtered ultrathin Pt/Co/MgO nanostructures, at room temperature and zero applied magnetic field. We use high lateral resolution X-ray magnetic circular dichroism microscopy to image their chiral Néel internal structure which we explain as due to the large strength of the Dzyaloshinskii-Moriya interaction as revealed by spin wave spectroscopy measurements. Our results are substantiated by micromagnetic simulations and numerical models, which allow the identification of the physical mechanisms governing the size and stability of the skyrmions. △ Less

Submitted 10 January, 2016; originally announced January 2016.

Comments: Submitted version. Extended version to appear in Nature Nanotechnology

Spin-orbit torque driven chiral magnetization reversal in ultrathin nanostructures

Authors: N. Mikuszeit, O. Boulle, I. M. Miron, K. Garello, P. Gambardella, G. Gaudin, L. D. Buda-Prejbeanu

Abstract: We show that the spin-orbit torque induced magnetization switching in nanomagnets presenting Dzyaloshinskii-Moriya (DMI) interaction is governed by a chiral domain nucleation at the edges. The nucleation is induced by the DMI and the applied in-plane magnetic field followed by domain wall propagation. Our micromagnetic simulations show that the DC switching current can be defined as the edge nucle… ▽ More We show that the spin-orbit torque induced magnetization switching in nanomagnets presenting Dzyaloshinskii-Moriya (DMI) interaction is governed by a chiral domain nucleation at the edges. The nucleation is induced by the DMI and the applied in-plane magnetic field followed by domain wall propagation. Our micromagnetic simulations show that the DC switching current can be defined as the edge nucleation current, which decreases strongly with increasing amplitude of the DMI. This description allows us to build a simple analytical model to quantitatively predict the switching current. We find that domain nucleation occurs down to a lateral size of 15 nm, defined by the length-scale of the DMI, beyond which the reversal mechanism approaches a macrospin behavior. The switching is deterministic and bipolar. △ Less

Submitted 24 September, 2015; originally announced September 2015.

Journal ref: Phys. Rev. B 92, 144424 (2015)

Ultra-fast perpendicular Spin Orbit Torque MRAM

Authors: Murat Cubukcu, Olivier Boulle, Nikolaï Mikuszeit, Claire Hamelin, Thomas Brächer, Nathalie Lamard, Marie-Claire Cyrille, Liliana Buda-Prejbeanu, Kevin Garello, Ioan Mihai Miron, O. Klein, G. de Loubens, V. V. Naletov, Juergen Langer, Berthold Ocker, Pietro Gambardella, Gilles Gaudin

Abstract: We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the ns range. Our results show that SOT-MRAM allows fast and low power write operations, which rend… ▽ More We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the ns range. Our results show that SOT-MRAM allows fast and low power write operations, which renders it promising for non-volatile cache memory applications. △ Less

Submitted 5 March, 2018; v1 submitted 8 September, 2015; originally announced September 2015.

Comments: 15 pages, 3 figures

Journal ref: IEEE Transactions on Magnetics, 99, (2018)

Respective influence of in-plane and out-of-plane spin-transfer torques in magnetization switching of perpendicular magnetic tunnel junctions

Authors: A. A. Timopheev, R. Sousa, M. Chshiev, L. D. Buda-Prejbeanu, B. Dieny

Abstract: The relative contributions of in-plane (dam**-like) and out-of-plane (field-like) spin-transfer-torques in the magnetization switching of out-of-plane magnetized magnetic tunnel junctions (pMTJ) has been theoretically analyzed using the transformed Landau-Lifshitz (LL) equation with the STT terms. It is demonstrated that in a pMTJ structure obeying macrospin dynamics, the out-of-plane torque inf… ▽ More The relative contributions of in-plane (dam**-like) and out-of-plane (field-like) spin-transfer-torques in the magnetization switching of out-of-plane magnetized magnetic tunnel junctions (pMTJ) has been theoretically analyzed using the transformed Landau-Lifshitz (LL) equation with the STT terms. It is demonstrated that in a pMTJ structure obeying macrospin dynamics, the out-of-plane torque influences the precession frequency but it does not contribute significantly to the STT switching process (in particular to the switching time and switching current density), which is mostly determined by the in-plane STT contribution. This conclusion is confirmed by finite temperature and finite writing pulse macrospin simulations of the current-field switching diagrams. It contrasts with the case of STT-switching in in-plane magnetized MTJ in which the field-like term also influences the switching critical current. This theoretical analysis was successfully applied to the interpretation of voltage-field STT switching diagrams experimentally measured on perpendicular MTJ pillars 36 nm in diameter, which exhibit macrospin-like behavior. The physical nonequivalence of Landau and Gilbert dissipation terms in presence of STT-induced dynamics is also discussed. △ Less

Submitted 26 August, 2015; v1 submitted 2 June, 2015; originally announced June 2015.

Journal ref: Phys. Rev. B 92, 104430 (2015)

Chiral dam** of magnetic domain walls

Authors: Emilie Jué, C. K. Safeer, Marc Drouard, Alexandre Lopez, Paul Balint, Liliana Buda-Prejbeanu, Olivier Boulle, Stephane Auffret, Alain Schuhl, Aurelien Manchon, Ioan Mihai Miron, Gilles Gaudin

Abstract: Structural symmetry breaking in magnetic materials is responsible for a variety of outstanding physical phenomena. Examples range from the existence of multiferroics, to current induced spin orbit torques (SOT) and the formation of topological magnetic structures. In this letter we bring into light a novel effect of the structural inversion asymmetry (SIA): a chiral dam** mechanism. This phenome… ▽ More Structural symmetry breaking in magnetic materials is responsible for a variety of outstanding physical phenomena. Examples range from the existence of multiferroics, to current induced spin orbit torques (SOT) and the formation of topological magnetic structures. In this letter we bring into light a novel effect of the structural inversion asymmetry (SIA): a chiral dam** mechanism. This phenomenon is evidenced by measuring the field driven domain wall (DW) motion in perpendicularly magnetized asymmetric Pt/Co/Pt trilayers. The difficulty in evidencing the chiral dam** is that the ensuing DW dynamics exhibit identical spatial symmetry to those expected from the Dzyaloshinskii-Moriya interaction (DMI). Despite this fundamental resemblance, the two scenarios are differentiated by their time reversal properties: while DMI is a conservative effect that can be modeled by an effective field, the chiral dam** is purely dissipative and has no influence on the equilibrium magnetic texture. When the DW motion is modulated by an in-plane magnetic field, it reveals the structure of the internal fields experienced by the DWs, allowing to distinguish the physical mechanism. The observation of the chiral dam**, not only enriches the spectrum of physical phenomena engendered by the SIA, but since it can coexists with DMI it is essential for conceiving DW and skyrmion devices. △ Less

Submitted 16 April, 2015; originally announced April 2015.

Modulating spin transfer torque switching dynamics with two orthogonal spin-polarizers by varying the cell aspect ratio

Authors: B. Lacoste, M. Marins de Castro, T. Devolder, R. C. Sousa, L. D. Buda-Prejbeanu, S. Auffret, U. Ebels, C. Ducruet, I. L. Prejbeanu, L. Vila, B. Rodmacq, B. Dieny

Abstract: We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both experimentally and by numerical simulations using the macrospin model. We show that the anisotropy field plays a significant role in the dynamics, along with the… ▽ More We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both experimentally and by numerical simulations using the macrospin model. We show that the anisotropy field plays a significant role in the dynamics, along with the relative amplitude of the two spin-torque contributions. This was confirmed by micromagnetic simulations. Real-time measurements of the reversal were performed with samples of low and high aspect ratio. For low aspect ratios, a precessional motion of the magnetization was observed and the effect of temperature on the precession coherence was studied. For high aspect ratios, we observed magnetization reversals in less than 1 ns for high enough current densities, the final state being controlled by the current direction in the magnetic tunnel junction cell. △ Less

Submitted 3 December, 2014; v1 submitted 23 July, 2014; originally announced July 2014.

Comments: 6 pages, 7 figures

Journal ref: Phys. Rev. B 90, 224404 (2014)

Current induced domain wall dynamics in the presence of spin orbit torques

Authors: O. Boulle, L. D. Buda-Prejbeanu, E. Jué, I. M. Miron, G. Gaudin

Abstract: Current induced domain wall (DW) motion in perpendicularly magnetized nanostripes in the presence of spin orbit torques is studied. We show using micromagnetic simulations that the direction of the current induced DW motion and the associated DW velocity depend on the relative values of the field like torque (FLT) and the Slonczewski like torques (SLT). The results are well explained by a collecti… ▽ More Current induced domain wall (DW) motion in perpendicularly magnetized nanostripes in the presence of spin orbit torques is studied. We show using micromagnetic simulations that the direction of the current induced DW motion and the associated DW velocity depend on the relative values of the field like torque (FLT) and the Slonczewski like torques (SLT). The results are well explained by a collective coordinate model which is used to draw a phase diagram of the DW dynamics as a function of the FLT and the SLT. We show that a large increase in the DW velocity can be reached by a proper tuning of both torques. △ Less

Submitted 18 October, 2013; v1 submitted 15 October, 2013; originally announced October 2013.

Comments: 9 pages, 3 figures

Domain wall tilting in the presence of the Dzyaloshinskii-Moriya interaction in out-of-plane magnetized magnetic nanotracks

Authors: O. Boulle, S. Rohart, L. D. Buda-Prejbeanu, E. Jué, I. M. Miron, S. Pizzini, J. Vogel, G. Gaudin, A. Thiaville

Abstract: We show that the Dzyaloshinskii-Moriya interaction (DMI) can lead to a tilting of the domain wall (DW) surface in perpendicularly magnetized magnetic nanotracks when DW dynamics is driven by an easy axis magnetic field or a spin polarized current. The DW tilting affects the DW dynamics for large DMI and the tilting relaxation time can be very large as it scales with the square of the track width.… ▽ More We show that the Dzyaloshinskii-Moriya interaction (DMI) can lead to a tilting of the domain wall (DW) surface in perpendicularly magnetized magnetic nanotracks when DW dynamics is driven by an easy axis magnetic field or a spin polarized current. The DW tilting affects the DW dynamics for large DMI and the tilting relaxation time can be very large as it scales with the square of the track width. The results are well explained by an analytical model based on a Lagrangian approach where the DMI and the DW tilting are included. We propose a simple way to estimate the DMI in a magnetic multilayers by measuring the dependence of the DW tilt angle on a transverse static magnetic field. Our results shed light on the current induced DW tilting observed recently in Co/Ni multilayers with inversion asymmetry, and further support the presence of DMI in these systems. △ Less

Submitted 8 August, 2013; originally announced August 2013.

Comments: 12 pages, 3 figures, 1 Supplementary Materials

Current induced domain wall dynamics in the presence of a transverse magnetic field in out-of-plane magnetized materials

Authors: O. Boulle, L. D. Buda-Prejbeanu, M. Miron, G. Gaudin

Abstract: An analytical model was developped to describe the current induced DW dynamics of a Bloch DW in the presence of an external transverse magnetic field. The model takes into account the DW deformation and the magnetization tilting in the domain. The model is compared to the results of micromagnetic simulation and an excellent agreement is obtained. In the steady state regime, the model shows that th… ▽ More An analytical model was developped to describe the current induced DW dynamics of a Bloch DW in the presence of an external transverse magnetic field. The model takes into account the DW deformation and the magnetization tilting in the domain. The model is compared to the results of micromagnetic simulation and an excellent agreement is obtained. In the steady state regime, the model shows that the domain tilting does not change the DW mobility. An external or current induced transverse magnetic field such as the Oersted or Rashba field can prevent the Walker breakdown leading to a higher domain wall velocity. △ Less

Submitted 20 July, 2012; originally announced July 2012.

Comments: to be published in Journal of Applied Physics

Temperature dependence of the emission linewidth in MgO-based spin torque nano-oscillators

Authors: J. F. Sierra, M. Quinsat, U. Ebels, D. Gusakova, I. Joumard, A. S. Jenkins, L. Buda-Prejbeanu, B. Dieny, M. C. Cyrille, A. Zeltser, J. A. Katine

Abstract: Spin transfer driven excitations in magnetic nanostructures are characterized by a relatively large microwave emission linewidth (10 -100 MHz). Here we investigate the role of thermal fluctuations as well as of the non-linear amplitude-phase coupling parameter and the amplitude relaxation rate to explain the linewidth broadening of in-plane precession modes induced in planar nanostructures. Experi… ▽ More Spin transfer driven excitations in magnetic nanostructures are characterized by a relatively large microwave emission linewidth (10 -100 MHz). Here we investigate the role of thermal fluctuations as well as of the non-linear amplitude-phase coupling parameter and the amplitude relaxation rate to explain the linewidth broadening of in-plane precession modes induced in planar nanostructures. Experiments on the linewidth broadening performed on MgO based magnetic tunnel junctions are compared to the linewidth obtained from macrospin simulations and from evaluation of the phase variance. In all cases we find that the linewidth varies linearly with temperature when the amplitude relaxation rate is of the same order as the linewidth and when the amplitude-phase coupling parameter is relatively small. The small amplitude-phase coupling parameter means that the linewidth is dominated by direct phase fluctuations and not by amplitude fluctuations, explaining thus its linear dependence as a function of temperature. △ Less

Submitted 13 December, 2011; originally announced December 2011.

Journal ref: Applied Physics Letters, 101 , 062407 (2012)

Finite Element Modeling of Charge and Spin-currents in Magnetoresistive Pillars with Current Crowding Effects

Authors: N. Strelkov, A. Vedyayev, D. Gusakova, L. D. Buda-Prejbeanu, M. Chshiev, S. Amara, A. Vaysset, B. Dieny

Abstract: The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry. This approach was used to study the spin-dependent transport in giant magnetoresistance metallic pillars sandwiched between extended electrodes as in magnetoresistive heads for hard disk drives. The charge current… ▽ More The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry. This approach was used to study the spin-dependent transport in giant magnetoresistance metallic pillars sandwiched between extended electrodes as in magnetoresistive heads for hard disk drives. The charge current crowding around the boundaries between the electrodes and the pillar has a quite significant influence on the spin current. △ Less

Submitted 2 February, 2010; originally announced February 2010.

Comments: 11 pages, 4 figures

Journal ref: IEEE Magnetics Letters 1, 3000304 (2010)

Spin-current vortices in current-perpendicular-to-plane nanoconstricted spin-valves

Authors: N. Strelkov, A. Vedyayev, N. Ryzhanova, D. Gusakova, L. D. Buda-Prejbeanu, M. Chshiev, S. Amara, N. de Mestier, C. Baraduc, B. Dieny

Abstract: The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry with strongly inhomogeneous current flow. As an illustration, spin-dependent transport through a non-magnetic nanoconstriction separating two magnetic layers was investigated. Unexpected results such as vortices of sp… ▽ More The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry with strongly inhomogeneous current flow. As an illustration, spin-dependent transport through a non-magnetic nanoconstriction separating two magnetic layers was investigated. Unexpected results such as vortices of spin-currents in the vicinity of the nanoconstriction were obtained. The angular variations of magnetoresistance and spin-transfer torque are strongly influenced by the structure geometry. △ Less

Submitted 13 July, 2011; v1 submitted 29 January, 2010; originally announced January 2010.

Comments: 11 pages, 5 figures

Journal ref: Phys. Rev. B 84, 024416 (2011)

Dimensionality cross-over in magnetism: from domain walls (2D) to vortices (1D)

Authors: Aurélien Masseboeuf, Olivier Fruchart, Jean-Christophe Toussaint, Evaggelos Kritsikis, L. D. Buda-Prejbeanu, Fabien Cheynis, Pascale Bayle-Guillemaud, A. Marty

Abstract: Dimensionality cross-over is a classical topic in physics. Surprisingly it has not been searched in micromagnetism, which deals with objects such as domain walls (2D) and vortices (1D). We predict by simulation a second-order transition between these two objects, with the wall length as the Landau parameter. This was conrmed experimentally based on micron-sized ux-closure dots. Dimensionality cross-over is a classical topic in physics. Surprisingly it has not been searched in micromagnetism, which deals with objects such as domain walls (2D) and vortices (1D). We predict by simulation a second-order transition between these two objects, with the wall length as the Landau parameter. This was conrmed experimentally based on micron-sized ux-closure dots. △ Less

Submitted 14 June, 2010; v1 submitted 16 September, 2009; originally announced September 2009.

Journal ref: Physical Review Letters 104 (2010) 127204

Innovative Weak Formulation for The Landau-Lifshitz-Gilbert Equations

Authors: Helga Szambolics, Jean-Christophe Toussaint, L. D. Buda-Prejbeanu, François Alouges, Evaggelos Kritsikis, Olivier Fruchart

Abstract: A non-conventional finite element formalism is proposed to solve the dynamic Landau-Lifshitz-Gilbert micromagnetic equations. Two bidimensional test problems are treated to estimate the validity and the accuracy of this finite element approach A non-conventional finite element formalism is proposed to solve the dynamic Landau-Lifshitz-Gilbert micromagnetic equations. Two bidimensional test problems are treated to estimate the validity and the accuracy of this finite element approach △ Less

Submitted 5 March, 2008; originally announced March 2008.

Comments: 4 pages, proceedings for Intermag Madrid, May 2008 (oral contribution)