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Aerial Measurement of Radioxenon Concentration off the West Coast of Vancouver Island following the Fukushima Reactor Accident
Authors:
L. E. Sinclair,
H. C. J. Seywerd,
R. Fortin,
J. M. Carson,
P. R. B. Saull,
M. J. Coyle,
R. A. Van Brabant,
J. L. Buckle,
S. M. Desjardins,
R. M. Hall
Abstract:
In response to the Fukushima nuclear reactor accident, on March 20th, 2011, Natural Resources Canada conducted aerial radiation surveys over water just off of the west coast of Vancouver Island. Dose-rate levels were found to be consistent with background radiation, however a clear signal due to Xe-133 was observed. Methods to extract Xe-133 count rates from the measured spectra, and to determine…
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In response to the Fukushima nuclear reactor accident, on March 20th, 2011, Natural Resources Canada conducted aerial radiation surveys over water just off of the west coast of Vancouver Island. Dose-rate levels were found to be consistent with background radiation, however a clear signal due to Xe-133 was observed. Methods to extract Xe-133 count rates from the measured spectra, and to determine the corresponding Xe-133 volumetric concentration, were developed. The measurements indicate that Xe-133 concentrations on average lie in the range of 30 to 70 Bq/m3.
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Submitted 20 June, 2011;
originally announced June 2011.
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High field magneto-transport in high mobility gated InSb/InAlSb quantum well heterostructures
Authors:
A. M. Gilbertson,
W. R. Branford,
M. Fearn,
L. Buckle,
P. D. Buckle,
T. Ashley,
L. F. Cohen
Abstract:
We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. The low temperature carrier mobility of the samples studied ranged from 18.4 to 39.5 m2V-1s-1 with carrier densities between 1.5x1015 and 3.28x1015 m-2. Room temperature mobilities are reported in excess of 6 m2V-1s-1. It is found that the Landau level broadening decreases with carrier density and b…
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We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. The low temperature carrier mobility of the samples studied ranged from 18.4 to 39.5 m2V-1s-1 with carrier densities between 1.5x1015 and 3.28x1015 m-2. Room temperature mobilities are reported in excess of 6 m2V-1s-1. It is found that the Landau level broadening decreases with carrier density and beating patterns are observed in the magnetoresistance with non-zero node amplitudes in samples with the narrowest broadening despite the presence of a large g-factor. The beating is attributed to Rashba splitting phenomenon and Rashba coupling parameters are extracted from the difference in spin populations for a range of samples and gate biases. The influence of Landau level broadening and spin-dependent scattering rates on the observation of beating in the Shubnikov-de Haas oscillations is investigated by simulations of the magnetoconductance. Data with non-zero beat node amplitudes are accompanied by asymmetric peaks in the Fourier transform, which are successfully reproduced by introducing a spin-dependent broadening in the simulations. It is found that the low-energy (majority) spin up state suffers more scattering than the high-energy (minority) spin down state and that the absence of beating patterns in the majority of (lower density) samples can be attributed to the same effect when the magnitude of the level broadening is large.
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Submitted 19 March, 2009;
originally announced March 2009.
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A Surface-Gated InSb Quantum Well Single Electron Transistor
Authors:
J. M. S. Orr,
P. D. Buckle,
M. Fearn,
C. J. Storey,
L. Buckle,
T. Ashley
Abstract:
Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs, for quantum information processing devices. However, differences in material and device technology result in significant processing challenges. Simple Coulomb b…
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Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs, for quantum information processing devices. However, differences in material and device technology result in significant processing challenges. Simple Coulomb blockade and quantised confinement models are considered to explain the observation of conductance oscillations in these structures. The charging energy is found to be comparable with the energy spectrum for single particle states.
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Submitted 30 April, 2007;
originally announced April 2007.
