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Modelling noise in global Molmer-Sorensen interactions applied to quantum approximate optimization
Authors:
Phillip C. Lotshaw,
Kevin D. Battles,
Bryan Gard,
Gilles Buchs,
Travis S. Humble,
Creston D. Herold
Abstract:
Many-qubit Mølmer-Sørensen (MS) interactions applied to trapped ions offer unique capabilities for quantum information processing, with applications including quantum simulation and the quantum approximate optimization algorithm (QAOA). Here, we develop a physical model to describe many-qubit MS interactions under four sources of experimental noise: vibrational mode frequency fluctuations, laser p…
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Many-qubit Mølmer-Sørensen (MS) interactions applied to trapped ions offer unique capabilities for quantum information processing, with applications including quantum simulation and the quantum approximate optimization algorithm (QAOA). Here, we develop a physical model to describe many-qubit MS interactions under four sources of experimental noise: vibrational mode frequency fluctuations, laser power fluctuations, thermal initial vibrational states, and state preparation and measurement errors. The model parameterizes these errors from simple experimental measurements, without free parameters. We validate the model in comparison with experiments that implement sequences of MS interactions on two $^{171}$Yb$^+$ ions. The model shows reasonable agreement after several MS interactions as quantified by the reduced chi-squared statistic $χ^2_\mathrm{red} \approx 2$. As an application we examine MaxCut QAOA experiments on three and six ions. The experimental performance is quantified by approximation ratios that are $91\%$ and $83\%$ of the optimal theoretical values. Our model predicts $0.93^{+0.03}_{-0.02}$ and $0.95^{+0.04}_{-0.03}$, respectively, with disagreement in the latter value attributable to secondary noise sources beyond those considered in our analysis. With realistic experimental improvements to reduce measurement error and radial trap frequency variations the model achieves approximation ratios that are 99$\%$ of the optimal. Incorporating these improvements into future experiments is expected to reveal new aspects of noise for future modeling and experimental improvements.
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Submitted 7 November, 2023; v1 submitted 31 October, 2022;
originally announced November 2022.
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Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation
Authors:
David Mikhail,
Benoit Voisin,
Dominique Didier St Medar,
Gilles Buchs,
Sven Rogge,
Stephan Rachel
Abstract:
We study the effects of electron-electron interactions on the charge excitation spectrum of the spinful Su-Schrieffer-Heeger (SSH) model, a prototype of a 1D bulk obstructed topological insulator. In view of recent progress in the fabrication of dopant-based quantum simulators we focus on experimentally detectable signatures of interacting topology in finite lattices. To this end we use Lanczos-ba…
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We study the effects of electron-electron interactions on the charge excitation spectrum of the spinful Su-Schrieffer-Heeger (SSH) model, a prototype of a 1D bulk obstructed topological insulator. In view of recent progress in the fabrication of dopant-based quantum simulators we focus on experimentally detectable signatures of interacting topology in finite lattices. To this end we use Lanczos-based exact diagonalization to calculate the single-particle spectral function in real space which generalizes the local density of states to interacting systems. Its spatial and spectral resolution allows for the direct investigation and identification of edge states. By studying the non-interacting limit, we demonstrate that the topological in-gap states on the boundary are robust against both finite-size effects as well as random bond and onsite disorder which suggests the feasibility of simulating the SSH model in engineered dopant arrays in silicon. While edge excitations become zero-energy spin-like for any finite interaction strength, our analysis of the spectral function shows that the single-particle charge excitations are gapped out on the boundary. Despite the loss of topological protection we find that these edge excitations are quasiparticle-like as long as they remain within the bulk gap. Above a critical interaction strength of $U_c\approx 5 t$ these quasiparticles on the boundary loose their coherence which is explained by the merging of edge and bulk states. This is in contrast to the many-body edge excitations which survive the limit of strong coupling, as established in the literature. Our findings show that for moderate repulsive interactions the non-trivial phase of the interacting SSH model can be detected through remnant signatures of topological single-particle states using single-particle local measurement techniques such as scanning tunneling spectroscopy.
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Submitted 8 November, 2022; v1 submitted 8 August, 2022;
originally announced August 2022.
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Simulations of Frustrated Ising Hamiltonians with Quantum Approximate Optimization
Authors:
Phillip C. Lotshaw,
Han**g Xu,
Bilal Khalid,
Gilles Buchs,
Travis S. Humble,
Arnab Banerjee
Abstract:
Novel magnetic materials are important for future technological advances. Theoretical and numerical calculations of ground state properties are essential in understanding these materials, however, computational complexity limits conventional methods for studying these states. Here we investigate an alternative approach to preparing materials ground states using the quantum approximate optimization…
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Novel magnetic materials are important for future technological advances. Theoretical and numerical calculations of ground state properties are essential in understanding these materials, however, computational complexity limits conventional methods for studying these states. Here we investigate an alternative approach to preparing materials ground states using the quantum approximate optimization algorithm (QAOA) on near-term quantum computers. We study classical Ising spin models on unit cells of square, Shastry-Sutherland, and triangular lattices, with varying field amplitudes and couplings in the material Hamiltonian. We find relationships between the theoretical QAOA success probability and the structure of the ground state, indicating that only a modest number of measurements ($\lesssim100$) are needed to find the ground state of our nine-spin Hamiltonians, even for parameters leading to frustrated magnetism. We further demonstrate the approach in calculations on a trapped-ion quantum computer and succeed in recovering each ground state of the Shastry-Sutherland unit cell with probabilities close to ideal theoretical values. The results demonstrate the viability of QAOA for materials ground state preparation in the frustrated Ising limit, giving important first steps towards larger sizes and more complex Hamiltonians where quantum computational advantage may prove essential in develo** a systematic understanding of novel materials.
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Submitted 7 November, 2023; v1 submitted 10 June, 2022;
originally announced June 2022.
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Metallic Carbon Nanotube Quantum Dots with Broken Symmetries as a Platform for Tunable Terahertz Detection
Authors:
G. Buchs,
M. Marganska,
J. W. González,
K. Eimre,
C. A. Pignedoli,
D. Passerone,
A. Ayuela,
O. Gröning,
D. Bercioux
Abstract:
Generating and detecting radiation in the technologically relevant range of the so-called terahertz gap ($0.1 - 10$ THz) is challenging because of a lack of efficient sources and detectors. Quantum dots in carbon nanotubes have shown great potential to build sensitive terahertz detectors usually based on photon-assisted tunnelling. A recently reported mechanism combining resonant quantum dot trans…
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Generating and detecting radiation in the technologically relevant range of the so-called terahertz gap ($0.1 - 10$ THz) is challenging because of a lack of efficient sources and detectors. Quantum dots in carbon nanotubes have shown great potential to build sensitive terahertz detectors usually based on photon-assisted tunnelling. A recently reported mechanism combining resonant quantum dot transitions and tunnelling barriers asymmetries results in a narrow linewidth photocurrent response with a large signal-to-noise ratio under weak THz radiation. That device was sensitive to one frequency, corresponding to transitions between equidistant quantized states. In this work we show, using numerical together with scanning tunnelling spectroscopy studies of a defect-induced metallic zigzag single-walled carbon nanotube quantum dot that simultaneously breaking various symmetries in metallic nanotube quantum dots of arbitrary chirality strongly relaxes the selection rules in the electric dipole approximation, and removes energy degeneracies. This leads to a richer set of allowed optical transitions spanning frequencies from 1 THz to several tens of THz, for a $\sim$10 nm quantum dot. Based on these findings, we propose a terahertz detector device based on a metallic single-walled carbon nanotube quantum dot defined by artificial defects. Depending on its length and contacts transparency, the operating regimes range from a high-resolution gate-tunable terahertz sensor to a broadband terahertz detector. Our calculations indicate that the device is largely unaffected by temperatures up to 100 K, making carbon nanotube quantum dots with broken symmetries a promising platform to design tunable terahertz detectors that could operate at liquid nitrogen temperatures.
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Submitted 14 May, 2021; v1 submitted 18 June, 2020;
originally announced June 2020.
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Certification of spin-based quantum simulators
Authors:
Abolfazl Bayat,
Benoit Voisin,
Gilles Buchs,
Joe Salfi,
Sven Rogge,
Sougato Bose
Abstract:
Quantum simulators are engineered devices controllably designed to emulate complex and classically intractable quantum systems. A key challenge is to certify whether the simulator truly mimics the Hamiltonian of interest. This certification step requires the comparison of a simulator's output to a known answer, which is usually limited to small systems due to the exponential scaling of the Hilbert…
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Quantum simulators are engineered devices controllably designed to emulate complex and classically intractable quantum systems. A key challenge is to certify whether the simulator truly mimics the Hamiltonian of interest. This certification step requires the comparison of a simulator's output to a known answer, which is usually limited to small systems due to the exponential scaling of the Hilbert space. Here, in the context of Fermi-Hubbard spin-based analogue simulators, we propose a modular many-body spin to charge conversion scheme that scales linearly with both the system size and the number of low-energy eigenstates to discriminate. Our protocol is based on the global charge state measurement of a 1D spin chain performed at different detuning potentials along the chain. In the context of semiconductor-based systems, we identify realistic conditions for detuning the chain adiabatically in order to avoid state mixing while preserving charge coherence. Large simulators with vanishing energy gaps, including 2D arrays, can be certified block-by-block with a number of measurements scaling only linearly with the system size.
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Submitted 11 June, 2020; v1 submitted 5 May, 2019;
originally announced May 2019.
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Confined Electron and Hole States in Semiconducting Carbon Nanotube sub-10 nm Artificial Quantum Dots
Authors:
Gilles Buchs,
Dario Bercioux,
Leonhard Mayrhofer,
Oliver Gröning
Abstract:
We show that quantum confinement in the valence and conduction bands of semiconducting single-walled carbon nanotubes can be engineered by means of artificial defects. This ability holds potential for designing future nanotube-based quantum devices such as electrically driven room-temperature single-photon sources emitting at telecom-wavelength. Using Ar$^{+}$ and N$^{+}$ ion-induced defects, intr…
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We show that quantum confinement in the valence and conduction bands of semiconducting single-walled carbon nanotubes can be engineered by means of artificial defects. This ability holds potential for designing future nanotube-based quantum devices such as electrically driven room-temperature single-photon sources emitting at telecom-wavelength. Using Ar$^{+}$ and N$^{+}$ ion-induced defects, intrananotube quantum dots with sub-10 nm lateral sizes are created, giving rise to quantized electronic bound states with level spacings of the order of 100 meV and larger. Using low-temperature scanning tunneling spectroscopy, we resolve the energy and real space properties of the quantized states and compare them with theoretical model calculations. By solving the Schrödinger equation over a one-dimensional piecewise constant potential model, the effects of inhomogeneous defect scattering strength as well as surface variations in the Au(111) substrate on the quantized states structure are remarkably well reproduced. Furthermore, using ab-initio calculations, we demonstrate that defect structures such as vacancies, di-vacancies and chemisorbed nitrogen ad-atoms constitute strong scattering centers able to form quantum dots with clear signatures of discrete bound states as observed experimentally. The ab-initio simulations also allowed to study the scattering strength profile as a function of energy for different defect combinations, supporting the potential of highly stable double vacancies for practical applications at room temperature.
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Submitted 4 March, 2018; v1 submitted 22 September, 2017;
originally announced September 2017.
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Sha** field correlations with quantum antennas
Authors:
A. Mikhalychev,
D. Mogilevtsev,
G. Ya. Slepyan,
I. Karuseichyk,
G. Buchs,
D. L. Boiko,
A. Boag
Abstract:
Quantum antennas can shape the spatial entanglement of emitted photons originating from specific initial non-Dicke entangled states of antenna emitters. In contrast to a classical antenna, a quantum antenna might not be affecting the amplitudes and intensities distribution of the field, but only sha** the second and higher order correlations. The shape and directivity of the correlations can be…
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Quantum antennas can shape the spatial entanglement of emitted photons originating from specific initial non-Dicke entangled states of antenna emitters. In contrast to a classical antenna, a quantum antenna might not be affecting the amplitudes and intensities distribution of the field, but only sha** the second and higher order correlations. The shape and directivity of the correlations can be optimized using quantum state inference techniques. The character of the correlations can also be controlled by changing both the geometry and the initial state of the antenna. Positive and negative correlated twin-photons, as well as multi-photons entangled states can be produced from the same antenna for different initial states of the emitters. Our approach to antenna design can find applications in imaging and high-precision sensing, as well as in the development of an emitter-field interface for quantum information processing.
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Submitted 8 September, 2017;
originally announced September 2017.
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Repetition rate stabilization of an optical frequency comb based on solid-state laser technology with an intra-cavity electro-optic modulator
Authors:
Nicolas Torcheboeuf,
Gilles Buchs,
Stefan Kundermann,
Erwin Portuondo-Campa,
Jonathan Bennès,
Steve Lecomte
Abstract:
The repetition rate stabilization of an optical frequency comb based on diode-pumped solid-state laser technology is demonstrated using an intra-cavity electro-optic modulator. The large feedback bandwidth of such modulators allows disciplining the comb repetition rate on a cavity-stabilized continuous-wave laser with a locking bandwidth up to 700 kHz. This surpasses what can be achieved with any…
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The repetition rate stabilization of an optical frequency comb based on diode-pumped solid-state laser technology is demonstrated using an intra-cavity electro-optic modulator. The large feedback bandwidth of such modulators allows disciplining the comb repetition rate on a cavity-stabilized continuous-wave laser with a locking bandwidth up to 700 kHz. This surpasses what can be achieved with any other type of actuator reported so far. An in-loop integrated phase noise of 133 mrad has been measured and the PM-to-AM coupling of the electro-optic modulator has been investigated as well.
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Submitted 2 December, 2016;
originally announced December 2016.
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Ultra-low phase-noise microwave generation using a diode-pumped solid-state laser based frequency comb and a polarization-maintaining pulse interleaver
Authors:
Erwin Portuondo-Campa,
Gilles Buchs,
Stefan Kundermann,
Laurent Balet,
Steve Lecomte
Abstract:
We report ultra-low phase-noise microwave generation at a 9.6 GHz carrier frequency from optical frequency combs based on diode-pumped solid-state lasers emitting at telecom wavelength and referenced to a common cavity-stabilized continuous-wave laser. Using a novel fibered polarization-maintaining pulse interleaver, a single-oscillator phase-noise floor of -171 dBc/Hz has been measured with comme…
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We report ultra-low phase-noise microwave generation at a 9.6 GHz carrier frequency from optical frequency combs based on diode-pumped solid-state lasers emitting at telecom wavelength and referenced to a common cavity-stabilized continuous-wave laser. Using a novel fibered polarization-maintaining pulse interleaver, a single-oscillator phase-noise floor of -171 dBc/Hz has been measured with commercial PIN InGaAs photodiodes, constituting a record for this type of detector. Also, a direct optical measurement of the stabilized frequency combs timing jitter was performed using a balanced optical cross correlator, allowing for an identification of the origin of the current phase-noise limitations in the system.
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Submitted 6 October, 2015;
originally announced October 2015.
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Identifying signatures of photothermal current in a double-gated semiconducting nanotube
Authors:
Gilles Buchs,
Salvatore Bagiante,
Gary A. Steele
Abstract:
The remarkable electrical and optical properties or single-walled carbon nanotubes (SWNT) allowed for engineering device prototypes showing great potential for applications such as photodectors and solar cells. However, any path towards industrial maturity requires a detailed understanding of the fundamental mechanisms governing the process of photocurrent generation. Here, we present scanning pho…
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The remarkable electrical and optical properties or single-walled carbon nanotubes (SWNT) allowed for engineering device prototypes showing great potential for applications such as photodectors and solar cells. However, any path towards industrial maturity requires a detailed understanding of the fundamental mechanisms governing the process of photocurrent generation. Here, we present scanning photocurrent microscopy measurements on a double-gated suspended semiconducting SWNT and show that both photovoltaic and photothermal mechanisms are relevant for the interpretation of the photocurrent. We find that the dominant or non-dominant character of one or the other processes depends on the do** profile, and that the magnitude of each contribution is strongly influenced by the series resistance from the band alignment with the metal contacts. These results provide new insight into the interpretation of features in scanning photocurrent microscopy and lay the foundation for the understanding of optoelectronic devices made from SWNTs.
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Submitted 28 October, 2014; v1 submitted 5 August, 2014;
originally announced August 2014.
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Fast and efficient photodetection in nanoscale quantum-dot junctions
Authors:
Ferry Prins,
Michele Buscema,
Johannes S. Seldenthuis,
Samir Etaki,
Gilles Buchs,
Maria Barkelid,
Val Zwiller,
Yunan Gao,
Arjan J. Houtepen,
Laurens D. A. Siebbeles,
Herre S. J. van der Zant
Abstract:
We report on a photodetector in which colloidal quantum-dots directly bridge nanometer-spaced electrodes. Unlike in conventional quantum-dot thin film photodetectors, charge mobility no longer plays a role in our quantum-dot junctions as charge extraction requires only two individual tunnel events. We find an efficient photoconductive gain mechanism with external quantum-efficiencies of 38 electro…
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We report on a photodetector in which colloidal quantum-dots directly bridge nanometer-spaced electrodes. Unlike in conventional quantum-dot thin film photodetectors, charge mobility no longer plays a role in our quantum-dot junctions as charge extraction requires only two individual tunnel events. We find an efficient photoconductive gain mechanism with external quantum-efficiencies of 38 electrons-per-photon in combination with response times faster than 300 ns. This compact device-architecture may open up new routes for improved photodetector performance in which efficiency and bandwidth do not go at the cost of one another.
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Submitted 2 November, 2012;
originally announced November 2012.
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Imaging the formation of a p-n junction in a suspended carbon nanotube with scanning photocurrent microscopy
Authors:
Gilles Buchs,
Maria Barkelid,
Salvatore Bagiante,
Gary A. Steele,
Val Zwiller
Abstract:
We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at any position along the nanotube axis. Combining SPCM with transport measurements allows a detailed microscopic study of the evolution of the band profiles as a f…
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We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at any position along the nanotube axis. Combining SPCM with transport measurements allows a detailed microscopic study of the evolution of the band profiles as a function of the gates voltage. Here we study the emergence of a p-n and a n-p junctions out of a n-type transistor channel using two local gates. In both cases the I-V curves recorded for gate configurations corresponding to the formation of the p-n or n-p junction in the SPCM measurements reveal a clear transition from resistive to rectification regimes. The rectification curves can be fitted well to the Shockley diode model with a series resistor and reveal a clear ideal diode behavior.
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Submitted 2 September, 2011;
originally announced September 2011.
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Defect-induced multicomponent electron scattering in single-walled carbon nanotubes
Authors:
D. Bercioux,
G. Buchs,
H. Grabert,
O. Groening
Abstract:
We present a detailed comparison between theoretical predictions on electron scattering processes in metallic single-walled carbon nanotubes with defects and experimental data obtained by scanning tunneling spectroscopy of Ar$^+$ irradiated nanotubes. To this purpose we first develop a formalism for studying quantum transport properties of defected nanotubes in presence of source and drain contact…
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We present a detailed comparison between theoretical predictions on electron scattering processes in metallic single-walled carbon nanotubes with defects and experimental data obtained by scanning tunneling spectroscopy of Ar$^+$ irradiated nanotubes. To this purpose we first develop a formalism for studying quantum transport properties of defected nanotubes in presence of source and drain contacts and an STM tip. The formalism is based on a field theoretical approach describing low-energy electrons. We account for the lack of translational invariance induced by defects within the so called extended kp approximation. The theoretical model reproduces the features of the particle-in-a-box-like states observed experimentally. Further, the comparison between theoretical and experimental Fourier-transformed local density of state maps yields clear signatures for inter- and intra-valley electron scattering processes depending on the tube chirality.
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Submitted 27 April, 2011; v1 submitted 5 November, 2010;
originally announced November 2010.
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Electron Scattering in Intrananotube Quantum Dots
Authors:
G. Buchs,
D. Bercioux,
P. Ruffieux,
P. Groening,
H. Grabert,
O. Groening
Abstract:
Intratube quantum dots showing particle-in-a-box-like states with level spacings up to 200meV are realized in metallic single-walled carbon nanotubes by means of low dose medium energy Ar irradiation. Fourier transform scanning tunneling spectroscopy compared to results of a Fabry-Perot electron resonator model yields clear signatures for inter- and intra-valley scattering of electrons confined…
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Intratube quantum dots showing particle-in-a-box-like states with level spacings up to 200meV are realized in metallic single-walled carbon nanotubes by means of low dose medium energy Ar irradiation. Fourier transform scanning tunneling spectroscopy compared to results of a Fabry-Perot electron resonator model yields clear signatures for inter- and intra-valley scattering of electrons confined between consecutive irradiation-induced defects (inter-defects distance < 10nm). Effects arising from lifting the degeneracy of the Dirac cones within the first Brillouin zone are also observed.
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Submitted 6 July, 2009; v1 submitted 19 December, 2008;
originally announced December 2008.