Showing 1–33 of 33 results for author: Bryant, G W

Disorder-resilient transport through dopant arrays in silicon

Authors: Michał Gawełczyk, Garnett W. Bryant, Michał Zieliński

Abstract: Chains and arrays of phosphorus donors in silicon have recently been used to demonstrate dopant-based quantum simulators. The dopant disorder present in fabricated devices must be accounted for. Here, we theoretically study transport through disordered donor-based $3\times 3$ arrays that model recent experimental results. We employ a theory that combines the exact diagonalization of an extended Hu… ▽ More Chains and arrays of phosphorus donors in silicon have recently been used to demonstrate dopant-based quantum simulators. The dopant disorder present in fabricated devices must be accounted for. Here, we theoretically study transport through disordered donor-based $3\times 3$ arrays that model recent experimental results. We employ a theory that combines the exact diagonalization of an extended Hubbard model of the array with a non-equilibrium Green's function formalism to model transport in interacting systems. We show that current flow through the array and features of measured stability diagrams are highly resilient to disorder. We interpret this as an emergence of uncomplicated behavior in the multi-electron system dominated by strong correlations, regardless of array filling, where the current follows the shortest paths between source and drain sites that avoid possible obstacles. The reference $3\times 3$ array has transport properties very similar to three parallel 3-site chains coupled only by interchain Coulomb interaction, which indicates a challenge in characterizing such devices. △ Less

Submitted 8 May, 2024; originally announced May 2024.

Comments: 8 pages, 6 figures

Nagaoka Ferromagnetism in $3 \times 3$ Arrays and Beyond

Authors: Yan Li, Keyi Liu, Garnett W. Bryant

Abstract: Nagaoka ferromagnetism (NF) is a long-predicted example of itinerant ferromagnetism (IF) in the Hubbard model that has been studied theoretically for many years. The condition for NF, an infinite onsite Coulomb repulsion and a single hole in a half-filled band, does not arise naturally in materials, and was only realized recently for the first time in experiments on a 2 \times 2 array of gated qua… ▽ More Nagaoka ferromagnetism (NF) is a long-predicted example of itinerant ferromagnetism (IF) in the Hubbard model that has been studied theoretically for many years. The condition for NF, an infinite onsite Coulomb repulsion and a single hole in a half-filled band, does not arise naturally in materials, and was only realized recently for the first time in experiments on a 2 \times 2 array of gated quantum dots. Atomically precise fabrication of dopant arrays in Si allows for engineering highly controllable systems with complex geometries. This makes dopant arrays a good candidate to study NF in different array geometries through analog quantum simulation. Here we present theoretical simulations done for $3 \times 3$ arrays and larger $N \times N $ arrays of quantum dots, and predict the emergence of different forms of ferromagnetism in different geometries. We find NF in perfect $3 \times 3$ arrays, as well as in $N \times N $ arrays for one hole less than half-filling. The ratio of the Hubbard on-site repulsion U to hop** t that defines the onset of NF increases as N increases, approaching the bulk limit of infinite U for large N. Additional simulations are done for geometries made by removing sites from $N \times N $ arrays. Different forms of ferromagnetism are found for different geometries. Loops show ferromagnetism, but only for three electrons. For loops, the critical U/t for the onset of ferromagnetism decreases as the loop length increases. We show that this different dependence on size for loops and $N \times N $ arrays can be understood by a scaling argument. Our results show how analog quantum simulation with small arrays can elucidate the role of effects including wavefunction connectivity; system geometry, size and symmetry; bulk and edge sites; and kinetic energy in determining the quantum magnetism of small systems. △ Less

Submitted 5 April, 2024; originally announced April 2024.

Single-electron states of phosphorus-atom arrays in silicon

Authors: Maicol A. Ochoa, Keyi Liu, Michał Zieliński, Garnett W. Bryant

Abstract: We characterize the single-electron energies and the wavefunction structure of arrays with two, three, and four phosphorus atoms in silicon by implementing atomistic tight-binding calculations and analyzing wavefunction overlaps to identify the single-dopant states that hybridize to make the array states. The energy spectrum and wavefunction overlap variation as a function of dopant separation for… ▽ More We characterize the single-electron energies and the wavefunction structure of arrays with two, three, and four phosphorus atoms in silicon by implementing atomistic tight-binding calculations and analyzing wavefunction overlaps to identify the single-dopant states that hybridize to make the array states. The energy spectrum and wavefunction overlap variation as a function of dopant separation for these arrays shows that hybridization mostly occurs between single-dopant states of the same type, with some cross-hybridization between $A_1$ and $E$ states occurring at short separations. We also observe energy crossings between hybrid states of different types as a function of impurity separation. We then extract tunneling rates for electrons in different dopants by map** the state energies into hop** Hamiltonians in the site representation. Significantly, we find that diagonal and nearest neighbor tunneling rates are similar in magnitude in a square array. Our analysis also accounts for the shift of the on-site energy at each phosphorus atom resulting from the nuclear potential of the other dopants. This approach constitutes a solid protocol to map the electron energies and wavefunction structure into Fermi-Hubbard Hamiltonians needed to implement and validate analog quantum simulations in these devices. △ Less

Submitted 29 February, 2024; originally announced February 2024.

Fermi-level pinning in ErAs nanoparticles embedded in III-V semiconductors

Authors: Ruiqi Hu, Dai Q. Ho, Quang To, Garnett W. Bryant, Anderson Janotti

Abstract: Embedding rare-earth pnictide (RE-V) nanoparticles into III-V semiconductors enables unique optical, electrical, and thermal properties, with applications in THz photoconductive switches, tunnel junctions, and thermoelectric devices. Despite the high structural quality and control over growth, particle size, and density, the underlying electronic structure of these nanocomposite materials has only… ▽ More Embedding rare-earth pnictide (RE-V) nanoparticles into III-V semiconductors enables unique optical, electrical, and thermal properties, with applications in THz photoconductive switches, tunnel junctions, and thermoelectric devices. Despite the high structural quality and control over growth, particle size, and density, the underlying electronic structure of these nanocomposite materials has only been hypothesized. Basic questions about the metallic or semiconducting nature of the nanoparticles (that are typically < 3 nm in diameter) have remained unanswered. Using first-principles calculations, we investigated the structural and electronic properties of ErAs nanoparticles in AlAs, GaAs, InAs, and their alloys. Formation energies of the ErAs nanoparticles with different shapes and sizes (i.e., from cubic to spherical, with 1.14 nm, 1.71 nm, and 2.28 nm diameters) show that spherical nanoparticles are the most energetically favorable. As the diameter increases, the Fermi level is lowered from near the conduction band to the middle of the gap. For the lowest energy nanoparticles, the Fermi level is pinned near the mid-gap, at about 0.8 eV above the valence band in GaAs and about 1.2 eV in AlAs, and it is resonant in the conduction band in InAs. Our results show that the Fermi level is pinned on an absolute energy scale once the band alignment at AlAs/GaAs/InAs interfaces is considered, offering insights into the rational design of these nanocomposite materials. △ Less

Submitted 19 December, 2023; originally announced December 2023.

Incorporation of random alloy GaBi$_{x}$As$_{1-x}$ barriers in InAs quantum dot molecules: alloy strain and orbital effects towards enhanced tunneling

Authors: Arthur Lin, Matthew F. Doty, Garnett W. Bryant

Abstract: Self-assembled InAs quantum dots (QDs), which have long hole-spin coherence times and are amenable to optical control schemes, have long been explored as building blocks for qubit architectures. One such design consists of vertically stacking two QDs to create a quantum dot molecule (QDM). The two dots can be resonantly tuned to form "molecule-like" coupled hole states from the hybridization of ho… ▽ More Self-assembled InAs quantum dots (QDs), which have long hole-spin coherence times and are amenable to optical control schemes, have long been explored as building blocks for qubit architectures. One such design consists of vertically stacking two QDs to create a quantum dot molecule (QDM). The two dots can be resonantly tuned to form "molecule-like" coupled hole states from the hybridization of hole states otherwise localized in each respective dot. Furthermore, spin-mixing of the hybridized states in dots offset along their stacking direction enables qubit rotation to be driven optically, allowing for an all-optical qubit control scheme. Increasing the magnitude of this spin mixing is important for optical quantum control protocols. To enhance the tunnel coupling and spin-mixing across the dots, we introduce Bi in the GaAs inter-dot barrier. Previously, we showed how to model InAs/GaBiAs in an atomistic tight-binding formalism, and how the dot energy levels are affected by the alloy. In this paper, we discuss the lowering of the tunnel barrier, which results in a three fold increase of hole tunnel coupling strength in the presence of a 7% alloy. Additionally, we show how an asymmetric strain between the two dots caused by the alloy shifts the resonance. Finally, we discuss device geometries for which the introduction of Bi is most advantageous. △ Less

Submitted 8 April, 2024; v1 submitted 18 September, 2023; originally announced September 2023.

Comments: RevTex 4-2, 11 pages, 10 figures, one ancillary file

Journal ref: Phys. Rev. B 109, 165303 (2024)

Non-trivial topology in rare-earth monopnictides from dimensionality reduction

Authors: Dai Q. Ho, Ruiqi Hu, D. Quang To, Garnett W. Bryant, Anderson Janotti

Abstract: Thin films of rare-earth monopnictide semimetals are expected to turn into semiconductors due to quantum confinement effect, which lifts the overlap between electron pockets at Brillouin zone edges and hole pockets at the zone center. Instead, taking non-magnetic LaSb as an example, we find the emergence of a quantum spin Hall insulator phase in LaSb(001) films as the thickness is reduced to 7, 5,… ▽ More Thin films of rare-earth monopnictide semimetals are expected to turn into semiconductors due to quantum confinement effect, which lifts the overlap between electron pockets at Brillouin zone edges and hole pockets at the zone center. Instead, taking non-magnetic LaSb as an example, we find the emergence of a quantum spin Hall insulator phase in LaSb(001) films as the thickness is reduced to 7, 5, or 3 monolayers. This is attributed to a strong quantum confinement effect on the in-plane electron pockets, and the lack of quantum confinement on the out-of-plane pocket in reciprocal space projected onto zone center, leading to a band inversion. Spin-orbit coupling opens a sizeable non-trivial gap in the band structure of the thin films. Such effect is shown to be general in rare-earth monopnictides and may lead to interesting phenomena when coupled with the 4f magnetic moments present in other members of this family of materials. △ Less

Submitted 3 February, 2023; originally announced February 2023.

Evaluating Alternative Glyph Design for Showing Large-Magnitude-Range Quantum Spins

Authors: Henan Zhao, Garnett W. Bryant, Wesley Griffin, Judith E. Terrill, Jian Chen

Abstract: We present experimental results to explore a form of bivariate glyphs for representing large-magnitude-range vectors. The glyphs meet two conditions: (1) two visual dimensions are separable; and (2) one of the two visual dimensions uses a categorical representation (e.g., a categorical colormap). We evaluate how much these two conditions determine the bivariate glyphs' effectiveness. The first exp… ▽ More We present experimental results to explore a form of bivariate glyphs for representing large-magnitude-range vectors. The glyphs meet two conditions: (1) two visual dimensions are separable; and (2) one of the two visual dimensions uses a categorical representation (e.g., a categorical colormap). We evaluate how much these two conditions determine the bivariate glyphs' effectiveness. The first experiment asks participants to perform three local tasks requiring reading no more than two glyphs. The second experiment scales up the search space in global tasks when participants must look at the entire scene of hundreds of vector glyphs to get an answer. Our results support that the first condition is necessary for local tasks when a few items are compared. But it is not enough to understand a large amount of data. The second condition is necessary for perceiving global structures of examining very complex datasets. Participants' comments reveal that the categorical features in the bivariate glyphs trigger emergent optimal viewers' behaviors. This work contributes to perceptually accurate glyph representations for revealing patterns from large scientific results. We release source code, quantum physics data, training documents, participants' answers, and statistical analyses for reproducible science https://osf.io/4xcf5/?view_only=94123139df9c4ac984a1e0df811cd580. △ Less

Submitted 25 December, 2022; originally announced January 2023.

Comments: This article has been accepted by IEEE Transactions on Visualization and Computer Graphics. arXiv admin note: substantial text overlap with arXiv:1905.02586

Light and microwave driven spin pum** across FeGaB-BiSb interface

Authors: Vinay Sharma, Weipeng Wu, Prabesh Bajracharya, Duy Quang To, Anthony Johnson, Anderson Janotti, Garnett W. Bryant, Lars Gundlach, M. Benjamin Jungfleisch, Ramesh C. Budhani

Abstract: 3-D topological insulators (TI) with large spin Hall conductivity have emerged as potential candidates for spintronic applications. Here, we report spin to charge conversion in bilayers of amorphous ferromagnet (FM) Fe_{78}Ga_{13}B_{9} (FeGaB) and 3-D TI Bi_{85}Sb_{15} (BiSb) activated by two complementary techniques: spin pum** and ultrafast spin-current injection. DC magnetization measurements… ▽ More 3-D topological insulators (TI) with large spin Hall conductivity have emerged as potential candidates for spintronic applications. Here, we report spin to charge conversion in bilayers of amorphous ferromagnet (FM) Fe_{78}Ga_{13}B_{9} (FeGaB) and 3-D TI Bi_{85}Sb_{15} (BiSb) activated by two complementary techniques: spin pum** and ultrafast spin-current injection. DC magnetization measurements establish the soft magnetic character of FeGaB films, which remains unaltered in the heterostructures of FeGaB-BiSb. Broadband ferromagnetic resonance (FMR) studies reveal enhanced dam** of precessing magnetization and large value of spin mixing conductance (5.03 x 10^{19} m^{-2}) as the spin angular momentum leaks into the TI layer. Magnetic field controlled bipolar dc voltage generated across the TI layer by inverse spin Hall effect is analyzed to extract the values of spin Hall angle and spin diffusion length of BiSb. The spin pum** parameters derived from the measurements of the femtosecond light-pulse-induced terahertz emission are consistent with the result of FMR. Kubo-Bastin formula and tight-binding model calculations shed light on the thickness-dependent spin-Hall conductivity of the TI films, with predictions that are in remarkable agreement with the experimental data. Our results suggest that room temperature deposited amorphous and polycrystalline heterostructures provide a promising platform for creating novel spin orbit torque devices. △ Less

Submitted 12 January, 2022; originally announced January 2022.

Comments: 9 figures

Journal ref: Physical Review Materials 2021

Strong coupling between a topological insulator and a III-V heterostructure at terahertz frequency

Authors: D. Quang To, Zhengtianye Wang, Q. Dai Ho, Ruiqi Hu, Wilder Acuna, Yongchen Liu, Garnett W. Bryant, Anderson Janotti, Joshua M. O. Zide, Stephanie Law, Matthew F. Doty

Abstract: We probe theoretically the emergence of strong coupling in a system consisting of a topological insulator (TI) and a III-V heterostructure using a numerical approach based on the scattering matrix formalism. Specifically, we investigate the interactions between terahertz excitations in a structure composed of Bi$_{2}$Se$_{3}$ and GaAs materials. We find that the interaction between the Bi$_{2}$Se… ▽ More We probe theoretically the emergence of strong coupling in a system consisting of a topological insulator (TI) and a III-V heterostructure using a numerical approach based on the scattering matrix formalism. Specifically, we investigate the interactions between terahertz excitations in a structure composed of Bi$_{2}$Se$_{3}$ and GaAs materials. We find that the interaction between the Bi$_{2}$Se$_{3}$ layer and AlGaAs/GaAs quantum wells with intersubband transitions (ISBTs) in the terahertz frequency regime creates new hybrid modes, namely Dirac plasmon-phonon-ISBT polaritons. The formation of these hybrid modes results in anti-crossings (spectral mode splitting) whose magnitude is an indication of the strength of the coupling. By varying the structural parameters of the constituent materials, our numerical calculations reveal that the magnitude of splitting depends strongly on the do** level and the scattering rate in the AlGaAs/GaAs quantum wells, as well as on the thickness of the GaAs spacer layer that separates the quantum-well structure from the TI layer. Our results reveal the material and device parameters required to obtain experimentally-observable signatures of strong coupling. Our model includes the contribution of an extra two-dimensional hole gas (2DHG) that is predicted to arise at the Bi$_{2}$Se$_{3}$/GaAs interface, based on density functional theory (DFT) calculations that explicitly account for details of the atomic terminations at the interface. The presence of this massive 2DHG at the TI/III-V interface shifts the dispersion of the Dirac plasmon-ISBT polaritons to higher frequencies. The dam** rate at this interface, in contrast, compensates the effect of the 2DHG. Finally, we observe that the phonon resonances in the TI layer are crucial to the coupling between the THz excitations in the TI and III-V materials. △ Less

Submitted 12 January, 2022; originally announced January 2022.

Journal ref: Phys. Rev. Materials 2022, 6, 035201 (2022)

Modification of the Optical Properties of Molecular Chains upon Coupling to Adatoms

Authors: Marvin M. Müller, Miriam Kosik, Marta Pelc, Garnett W. Bryant, Andrés Ayuela, Carsten Rockstuhl, Karolina Słowik

Abstract: Adsorbed atoms (adatoms) coupled to the matrix of solid state host materials as impurities can significantly modify their properties. Especially in low-dimensional materials, such as one-dimensional organic polymer chains or quasi-one-dimensional graphene nanoribbons, intriguing manipulation of the optical properties, such as the absorption cross section, is possible. The most widely used approach… ▽ More Adsorbed atoms (adatoms) coupled to the matrix of solid state host materials as impurities can significantly modify their properties. Especially in low-dimensional materials, such as one-dimensional organic polymer chains or quasi-one-dimensional graphene nanoribbons, intriguing manipulation of the optical properties, such as the absorption cross section, is possible. The most widely used approach to couple quantum emitters to optical antennas is based on the Purcell effect. This formalism, however, does not comprise charge transfer from the emitter to the antenna, but only spontaneous emission of the quantum emitter into the tailored photonic environment, that is evoked by the antenna. To capture such effects, we present a tight-binding formalism to couple an adatom to a finite Su-Schrieffer-Heeger chain, where the former is treated as a two-level system and the latter acts as an optical antenna. We systematically analyze how the coupling strength and the position of the adatom influence the optical properties of the molecular chains in the model. We take into account charge transfer from the adatom to the antenna and vice versa via an inter-system hop** parameter, and also include Coulomb interaction within the antenna as well as between the adatom and the antenna. We show that coupling the adatom to one of the bulk atoms of the linear chain results in a substantial change in optical properties already for comparatively small coupling strengths. We also find that the position of the adatom crucially determines if and how the optical properties of the chains are altered. Therefore, we identify this adatom-chain hybrid system as a tunable platform for light-matter interaction at the nanoscale. △ Less

Submitted 11 October, 2021; originally announced October 2021.

Comments: 14 pages, 9 figures

From single-particle-like to interaction-mediated plasmonic resonances in graphene nanoantennas

Authors: Marvin M. Müller, Miriam Kosik, Marta Pelc, Garnett W. Bryant, Andrés Ayuela, Carsten Rockstuhl, Karolina Słowik

Abstract: Plasmonic nanostructures attract tremendous attention as they confine electromagnetic fields well below the diffraction limit while simultaneously sustaining extreme local field enhancements. To fully exploit these properties, the identification and classification of resonances in such nanostructures is crucial. Recently, a novel figure of merit for resonance classification has been proposed 1 and… ▽ More Plasmonic nanostructures attract tremendous attention as they confine electromagnetic fields well below the diffraction limit while simultaneously sustaining extreme local field enhancements. To fully exploit these properties, the identification and classification of resonances in such nanostructures is crucial. Recently, a novel figure of merit for resonance classification has been proposed 1 and its applicability was demonstrated mostly to toy model systems. This novel measure, the energy-based plasmonicity index (EPI), characterizes the nature of resonances in molecular nanostructures. The EPI distinguishes between either a single-particle-like or a plasmonic nature of resonances based on the energy space coherence dynamics of the excitation. To advance the further development of this newly established measure, we present here its exemplary application to characterize the resonances of graphene nanoantennas. In particular, we focus on resonances in a doped nanoantenna. The structure is of interest, as a consideration of the electron dynamics in real space might suggest a plasmonic nature of selected resonances in the low do** limit but our analysis reveals the opposite. We find that in the undoped and moderately doped nanoantenna, the EPI classifies all emerging resonances as predominantly single-particle-like and only after do** the structure heavily, the EPI observes plasmonic response. △ Less

Submitted 27 November, 2020; originally announced November 2020.

Comments: The following article has been submitted to the Journal of Applied Physics

Many-Body Physics in Small Systems: Observing the Onset and Saturation of Correlation in Linear Atomic Chains

Authors: Emily Townsend, Tomáš Neuman, Alex Debrecht, Javier Aizpurua, Garnett W. Bryant

Abstract: The exact study of small systems can guide us toward measures for extracting information about many-body physics as we move to more complex systems capable of quantum information processing or quantum analog simulation. We use exact diagonalization to study many electrons in short 1-D atom chains represented by long-range extended Hubbard-like models. We introduce a novel measure, the Single-Parti… ▽ More The exact study of small systems can guide us toward measures for extracting information about many-body physics as we move to more complex systems capable of quantum information processing or quantum analog simulation. We use exact diagonalization to study many electrons in short 1-D atom chains represented by long-range extended Hubbard-like models. We introduce a novel measure, the Single-Particle Excitation Content (SPEC) of an eigenstate and show that the dependence of SPEC on state number reveals the nature of the ground state, and the onset and saturation of correlation between the electrons as Coulomb interaction strength increases. We use this SPEC behavior to identify five regimes as interaction is increased: a non-interacting single-particle regime, a regime of perturbative Coulomb interaction in which the SPEC is a nearly universal function of state number, the onset and saturation of correlation, a regime of fully correlated states in which hop** is a perturbation and SPEC is a different universal function of state number, and the regime of no hop**. In particular, the behavior of the SPEC shows that when electron-electron correlation plays a minor role, all of the lowest energy states are made up primarily of single-particle excitations of the ground state, and as the Coulomb interaction increases, the lowest energy states increasingly contain many-particle excitations. In addition, the SPEC highlights a fundamental, distinct difference between a non-interacting system and one with minute, very weak interactions. While SPEC is a quantity that can be calculated for small exactly diagonalizable systems, it guides our intuition for larger systems, suggesting the nature of excitations and their distribution in the spectrum. Thus, this function, like correlation functions or order parameters, provides us with a window of intuition about the behavior of a physical system. △ Less

Submitted 8 June, 2021; v1 submitted 13 November, 2020; originally announced November 2020.

Comments: 10 pages, 9 figures

Journal ref: Phys. Rev. B 103, 195429 (2021)

What Do People See in a Twenty-Second Glimpse of Bivariate Vector Field Visualizations?

Authors: Henan Zhao, Garnett W. Bryant, Wesley Griffin, Judith E. Terrill, Jian Chen

Abstract: Little is known about how people learn from a brief glimpse of three-dimensional (3D) bivariate vector field visualizations and about how well visual features can guide behavior. Here we report empirical study results on the use of color, texture, and length to guide viewing of bivariate glyphs: these three visual features are mapped to the first integer variable (v1) and length to the second quan… ▽ More Little is known about how people learn from a brief glimpse of three-dimensional (3D) bivariate vector field visualizations and about how well visual features can guide behavior. Here we report empirical study results on the use of color, texture, and length to guide viewing of bivariate glyphs: these three visual features are mapped to the first integer variable (v1) and length to the second quantitative variable (v2). Participants performed two tasks within 20 seconds: (1) MAX: find the largest v2 when v1 is fixed; (2) SEARCH: find a specific bivariate variable shown on the screen in a vector field. Our first study with eighteen participants performing these tasks showed that the randomized vector positions, although they lessened viewers' ability to group vectors, did not reduce task accuracy compared to structured vector fields. This result may support that these color, texture, and length can provide to a certain degree, guide viewers' attention to task-relevant regions. The second study measured eye movement to quantify viewers' behaviors with three-errors (scanning, recognition, and decision errors) and one-behavior (refixation) metrics. Our results showed two dominant search strategies: drilling and scanning. Coloring tended to restrict eye movement to the task-relevant regions of interest, enabling drilling. Length tended to support scanners who quickly wandered around at different v1 levels. Drillers had significantly less errors than scanners and the error rates for color and texture were also lowest. And length had limited discrimination power than color and texture as a 3D visual guidance. Our experiment results may suggest that using categorical visual feature could help obtain the global structure of a vector field visualization. We provide the first benchmark of the attention cost of seeing a bivariate vector on average about 5 items per second. △ Less

Submitted 7 June, 2019; v1 submitted 7 May, 2019; originally announced May 2019.

Comments: We want to withdraw this paper in the current stage, because (1) Terminology and argumentation may need major improvement; (2) There are several typos in this paper; (3) The title could be adjusted

Incorporation of random alloy GaBi$_x$As$_{1-x}$ barriers in InAs quantum dot molecules (I): energy levels and confined hole states

Authors: Arthur Lin, Matthew F. Doty, Garnett W. Bryant

Abstract: Self-assembled InAs quantum dots (QDs), which have long hole-spin coherence times and are amenable to optical control schemes, have long been explored as building blocks for qubit architectures. One such design consists of vertically stacking two QDs to create a quantum dot molecule (QDM) and using the spin-mixing properties of "molecule-like" coupled hole states for all-optical qubit manipulation… ▽ More Self-assembled InAs quantum dots (QDs), which have long hole-spin coherence times and are amenable to optical control schemes, have long been explored as building blocks for qubit architectures. One such design consists of vertically stacking two QDs to create a quantum dot molecule (QDM) and using the spin-mixing properties of "molecule-like" coupled hole states for all-optical qubit manipulation. In this article, the first of two papers, we introduce the incorporation of dilute GaBiAs alloys in the barrier region between the two dots. GaBiAs is expected to increase the spin-mixing of the molecular states needed for qubit operations by raising the barrier valence band edge and spin-orbit splitting. Using an atomistic tight-binding model, we compute the properties of GaBiAs and the modification of hole states that arise when the alloy is used in the barrier of an InAs QDM. An atomistic treatment is necessary to correctly capture non-traditional alloy effects such as the band-anticrossing valence band. It also allows for the study of configurational variances and clustering effects of the alloy. We find that in InAs QDMs with a GaBiAs interdot barrier, electron states are not strongly affected by the inclusion of Bi. However, hole states are much more sensitive to the presence and configuration of Bi in the barriers. By independently studying the alloy-induced strain and electronic scattering off Bi and As orbitals, we conclude that an initial increase in QDM hole state energy at low Bi concentration is caused by the alloy-induced strain. We further find that the decrease in QDM hole energy at higher Bi concentrations can only be explained when both alloy strain and orbital effects are considered. In our second article, we use the understanding developed here to discuss how the alloyed barriers contribute to enhancement in hole spin-mixing and the implications for QDM qubit architectures. △ Less

Submitted 26 February, 2019; v1 submitted 22 October, 2018; originally announced October 2018.

Comments: RevTex4-1, 13 pages, 17 figures

Journal ref: Phys. Rev. B 99, 075308 (2019)

Spin decoherence in a two-qubit CPHASE gate: the critical role of tunneling noise

Authors: Peihao Huang, Neil M. Zimmerman, Garnett W. Bryant

Abstract: Rapid progress in semiconductor spin qubits has enabled experimental demonstrations of a two-qubit logic gate. Understanding spin decoherence in a two-qubit logic gate is necessary for optimal qubit operation. We study spin decoherence due to $1/f$ charge noise for two electrons in a double quantum dot used for a two-qubit controlled-phase gate. In contrast to the usual belief, spin decoherence ca… ▽ More Rapid progress in semiconductor spin qubits has enabled experimental demonstrations of a two-qubit logic gate. Understanding spin decoherence in a two-qubit logic gate is necessary for optimal qubit operation. We study spin decoherence due to $1/f$ charge noise for two electrons in a double quantum dot used for a two-qubit controlled-phase gate. In contrast to the usual belief, spin decoherence can be dominated by the tunneling noise from $1/f$ charge noise instead of the detuning noise. Tunneling noise can dominate because the effect of tunneling noise on the spin qubit is first order in the charge admixture; while the effect of the detuning noise is only second order. The different orders of contributions result in different detuning dependence of the decoherence, which provides a way to identify the noise source. We find that decoherence in a recent two-qubit experiment was dominated by the tunneling noise from $1/f$ charge noise. The results illustrate the importance of considering tunneling noise to design optimal operation of spin qubits. △ Less

Submitted 27 November, 2018; v1 submitted 2 March, 2018; originally announced March 2018.

Journal ref: npj Quantum Information (2018) 4:62

Spin relaxation of a donor electron coupled to interface states

Authors: Peihao Huang, Garnett W. Bryant

Abstract: An electron spin qubit in a silicon donor atom is a promising candidate for quantum information processing because of its long coherence time. To be sensed with a single-electron transistor, the donor atom is usually located near an interface, where the donor states can be coupled with interface states. Here we study the phonon-assisted spin-relaxation mechanisms when a donor is coupled to confine… ▽ More An electron spin qubit in a silicon donor atom is a promising candidate for quantum information processing because of its long coherence time. To be sensed with a single-electron transistor, the donor atom is usually located near an interface, where the donor states can be coupled with interface states. Here we study the phonon-assisted spin-relaxation mechanisms when a donor is coupled to confined (quantum-dot-like) interface states. We find that both Zeeman interaction and spin-orbit interaction can hybridize spin and orbital states, each contributing to phonon-assisted spin relaxation in addition to the spin relaxation for a bulk donor or a quantum dot. When the applied magnetic field $B$ is weak (compared to orbital spacing), the phonon assisted spin relaxation shows the $B^5$ dependence. We find that there are peaks (hot-spots) in the $B$-dependent and detuning dependent spin relaxation due to strong hybridization of orbital states with opposite spin. We also find spin relaxation dips (cool-spots) due to the interference of different relaxation channels. Qubit operations near spin relaxation hot-spots can be useful for the fast spin initialization and near cool-spots for the preservation of quantum information during the transfer of spin qubits. △ Less

Submitted 27 November, 2018; v1 submitted 20 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. B 98, 195307 (2018)

Controlling the layer localization of gapless states in bilayer graphene with a gate voltage

Authors: W. Jaskólski, M. Pelc, Garnett W. Bryant, Leonor Chico, A. Ayuela

Abstract: Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied g… ▽ More Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied gate voltage magnitude. We also show how these bilayer gapless states arise from bands of single-layer graphene by analyzing the formation of carbon bonds between layers. Based on this analysis we provide a model Hamiltonian with analytical solutions, which explains the layer localization as a function of the ratio between the applied potential and interlayer hop**. Our results open a route for the manipulation of gapless states in electronic devices, analogous to the proposed writing and reading memories in topological insulators. △ Less

Submitted 22 September, 2017; originally announced September 2017.

Journal ref: 2D Materials 5, 025006 (2018)

Which resonances in small metallic nanoparticles are plasmonic?

Authors: Emily Townsend, Garnett W Bryant

Abstract: We use time-dependent density functional theory to examine the character of various resonances corresponding to peaks in the optical response of small metallic nanoparticles. Each resonance has both "sloshing" and "inversion" character. The sloshing mode is an oscillation in the occupation of the shells nearest the Fermi energy, transferring charge back and forth from below the Fermi level to abov… ▽ More We use time-dependent density functional theory to examine the character of various resonances corresponding to peaks in the optical response of small metallic nanoparticles. Each resonance has both "sloshing" and "inversion" character. The sloshing mode is an oscillation in the occupation of the shells nearest the Fermi energy, transferring charge back and forth from below the Fermi level to above it. It results in oscillation in charge density near the surface of the particle. Inversions monotonically move charge from occupied to unoccupied states, and result in oscillation in charge density in the core of the particle. We also discuss the dependence of the optical response on the size of the simulation grid, noting that the character of resonances appears stable with respect to changes in simulation size, even though the details of the spectrum change. This makes a reliable characterization possible. We consider what characteristics are important in deciding that a resonance is plasmonic. △ Less

Submitted 7 August, 2014; originally announced August 2014.

Comments: 17 pages, 12 figures, submitted to IOPs Journal of Optics Special Issue on Light-Matter Interactions on the Nanoscale

Journal ref: J. Opt. 16 (2014) 114022

Electric-field control of exciton fine structure: atomic scale manipulation of exchange splitting

Authors: Garnett W. Bryant, Natalia Malkova, James Sims

Abstract: We use atomistic tight-binding theory with a configuration interaction description of Coulomb and exchange effects to describe excitons in symmetric quantum dots in a vertical electric field. We show that field-induced manipulation of exciton orientation and phase produces a drastic reduction of fine structure splitting, an anticrossing, and a 90 degree rotation of polarization, similar to experim… ▽ More We use atomistic tight-binding theory with a configuration interaction description of Coulomb and exchange effects to describe excitons in symmetric quantum dots in a vertical electric field. We show that field-induced manipulation of exciton orientation and phase produces a drastic reduction of fine structure splitting, an anticrossing, and a 90 degree rotation of polarization, similar to experiment. An atomistic analysis is needed to explain how exciton reorientation modifies anisotropic exchange and fine structure splitting without significantly altering other splittings. △ Less

Submitted 18 December, 2012; originally announced December 2012.

Plasmons in nearly touching metallic nanoparticles: singular response in the limit of touching dimers

Authors: I. Romero, J. Aizpurua, G. W. Bryant, F. J. Garcia de Abajo

Abstract: The response of gold nanoparticle dimers is studied theoretically near and beyond the limit where the particles are touching. As the particles approach each other, a dominant dipole feature is observed that is pushed into the infrared due to interparticle coupling and that is associated with a large pileup of induced charge in the interparticle gap. The redshift becomes singular as the particle… ▽ More The response of gold nanoparticle dimers is studied theoretically near and beyond the limit where the particles are touching. As the particles approach each other, a dominant dipole feature is observed that is pushed into the infrared due to interparticle coupling and that is associated with a large pileup of induced charge in the interparticle gap. The redshift becomes singular as the particle separation decreases. The response weakens for very small separation when the coupling across the interparticle gap becomes so strong that dipolar oscillations across the pair are inhibited. Lower-wavelength, higher-order modes show a similar separation dependence in nearly touching dimers. After touching, singular behavior is observed through the emergence of a new infrared absorption peak, also accompanied by huge charge pileup at the interparticle junction, if initial interparticle-contact is made at a single point. This new mode is distinctly different from the lowest mode of the separated dimer. When the junction is made by contact between flat surfaces, charge at the junction is neutralized and mode evolution is continuous through contact. The calculated singular response explains recent experiments on metallic nanoparticle dimers and is relevant in the design of nanoparticle-based sensors and plasmon circuits. △ Less

Submitted 7 August, 2007; originally announced August 2007.

Journal ref: Optics Express 14, 9988-9999 (2006)

Semiconductor-metal nanoparticle molecules: hybrid excitons and non-linear Fano effect

Authors: Wei Zhang, Alexander O. Govorov, Garnett W. Bryant

Abstract: Modern nanotechnology opens the possibility of combining nanocrystals of various materials with very different characteristics in one superstructure. The resultant superstructure may provide new physical properties not encountered in homogeneous systems. Here we study theoretically the optical properties of hybrid molecules composed of semiconductor and metal nanoparticles. Excitons and plasmons… ▽ More Modern nanotechnology opens the possibility of combining nanocrystals of various materials with very different characteristics in one superstructure. The resultant superstructure may provide new physical properties not encountered in homogeneous systems. Here we study theoretically the optical properties of hybrid molecules composed of semiconductor and metal nanoparticles. Excitons and plasmons in such a hybrid molecule become strongly coupled and demonstrate novel properties. At low incident light intensity, the exciton peak in the absorption spectrum is broadened and shifted due to incoherent and coherent interactions between metal and semiconductor nanoparticles. At high light intensity, the absorption spectrum demonstrates a surprising, strongly asymmetric shape. This shape originates from the coherent inter-nanoparticle Coulomb interaction and can be viewed as a non-linear Fano effect which is quite different from the usual linear Fano resonance. △ Less

Submitted 16 August, 2006; v1 submitted 22 June, 2006; originally announced June 2006.

Comments: 5 pages, 5 figures, submitted to Phys. Rev. Lett

Generalization of the coupled dipole method to periodic structures

Authors: Patrick C. Chaumet, Adel Rahmani, Garnett W. Bryant

Abstract: We present a generalization of the coupled dipole method to the scattering of light by arbitrary periodic structures. This new formulation of the coupled dipole method relies on the same direct-space discretization scheme that is widely used to study the scattering of light by finite objects. Therefore, all the knowledge acquired previously for finite systems can be transposed to the study of pe… ▽ More We present a generalization of the coupled dipole method to the scattering of light by arbitrary periodic structures. This new formulation of the coupled dipole method relies on the same direct-space discretization scheme that is widely used to study the scattering of light by finite objects. Therefore, all the knowledge acquired previously for finite systems can be transposed to the study of periodic structures. △ Less

Submitted 13 May, 2003; originally announced May 2003.

Comments: 5 pages, 2 figures, and 1 table

Journal ref: Phys. Rev. B, vol 67, 165404 (2003)

Structural, electronic and magnetic properties of heterofullerenes C48B12

Authors: Rui-Hua Xie, Lasse Jensen, Garnett W. Bryant, Jijun Zhao, Vedene H. Smith Jr

Abstract: Bonding, electric (hyper)polarizability, vibrational and magnetic properties of heterofullerene ${\rm C}_{48}{\rm B}_{12}$ are studied by first-principles calculations. Infrared- and Raman-active vibrational frequencies of ${\rm C}_{48}{\rm B}_{12}$ are assigned. Eight $^{13}$C and 2 $^{11}$B NMR spectral signals of ${\rm C}_{48}{\rm B}_{12}$ are characterized. The first-order hyperpolarizabilit… ▽ More Bonding, electric (hyper)polarizability, vibrational and magnetic properties of heterofullerene ${\rm C}_{48}{\rm B}_{12}$ are studied by first-principles calculations. Infrared- and Raman-active vibrational frequencies of ${\rm C}_{48}{\rm B}_{12}$ are assigned. Eight $^{13}$C and 2 $^{11}$B NMR spectral signals of ${\rm C}_{48}{\rm B}_{12}$ are characterized. The first-order hyperpolarizability in ${\rm C}_{48}{\rm B}_{12}$ is zero because of the inversion symmetry. The average second-order hyperpolarizability of ${\rm C}_{48}{\rm B}_{12}$ is about 180% larger than that of ${\rm C}_{60}$. Our results suggest that ${\rm C}_{48}{\rm B}_{12}$ is also a candidate for photonic and optical limiting applications because of the enhanced third-order optical nonlinearities. △ Less

Submitted 15 April, 2003; v1 submitted 20 February, 2003; originally announced February 2003.

Comments: 6 pages, 3 figures, submitted to Chem.Phys.Lett

Journal ref: Chem.Phys.Lett. Vol.375, 445-451 (2003)

Electron-Hole Correlations and Optical Excitonic Gaps in Quantum-Dot Quantum Wells: Tight-Binding Approach

Authors: Rui-Hua Xie, Garnett W. Bryant, Seungwon Lee, W. Jaskolski

Abstract: Electron-hole correlation in quantum-dot quantum wells (QDQW's) is investigated by incorporating Coulomb and exchange interactions into an empirical tight-binding model. Sufficient electron and hole single-particle states close to the band edge are included in the configuration to achieve convergence of the first spin-singlet and triplet excitonic energies within a few meV. Coulomb shifts of abo… ▽ More Electron-hole correlation in quantum-dot quantum wells (QDQW's) is investigated by incorporating Coulomb and exchange interactions into an empirical tight-binding model. Sufficient electron and hole single-particle states close to the band edge are included in the configuration to achieve convergence of the first spin-singlet and triplet excitonic energies within a few meV. Coulomb shifts of about 100 meV and exchange splittings of about 1 meV are found for CdS/HgS/CdS QDQW's (4.7 nm CdS core diameter, 0.3 nm HgS well width and 0.3 nm to 1.5 nm CdS clad thickness) which have been characterized experimentally by Weller and co-workers [ D. Schooss, A. Mews, A. Eychmuller, H. Weller, Phys. Rev. B, 49, 17072 (1994)]. The optical excitonic gaps calculated for those QDQW's are in good agreement with the experiment. △ Less

Submitted 13 January, 2003; originally announced January 2003.

Comments: 3 figures, to appear in Phys.Rev.B

Journal ref: Phys.Rev.B Vol.65, 235306 (2002)

Tailorable acceptor ${\rm C}_{60-n}{\rm B}_{n}$ and donor ${\rm C}_{60-m}{\rm N}_{m}$ pairs for molecular electronics

Authors: Rui-Hua Xie, Garnett W. Bryant, Jijun Zhao, Vedene H. Smith Jr, Aldo Di Carlo, Alessandro Pecchia

Abstract: Our first-principles calculations demonstrate that ${\rm C}_{60-n}{\rm B}_{n}$ and ${\rm C}_{60-m}{\rm N}_{m}$ molecules can be engineered as the acceptors and donors, respectively, which are needed for molecular electronics, by properly controlling the number $n$ and $m$ of the substitutional dopants in ${\rm C}_{60}$. As an example, we show that acceptor ${\rm C}_{48}{\rm B}_{12}$ and donor… ▽ More Our first-principles calculations demonstrate that ${\rm C}_{60-n}{\rm B}_{n}$ and ${\rm C}_{60-m}{\rm N}_{m}$ molecules can be engineered as the acceptors and donors, respectively, which are needed for molecular electronics, by properly controlling the number $n$ and $m$ of the substitutional dopants in ${\rm C}_{60}$. As an example, we show that acceptor ${\rm C}_{48}{\rm B}_{12}$ and donor ${\rm C}_{48}{\rm N}_{12}$ are promising components for molecular rectifiers, carbon nanotube-based $p$-type, $n$-type, $n$-$p$-$n$ and $p$-$n$-$p$ transistors and $p$-$n$ junctions. △ Less

Submitted 22 April, 2003; v1 submitted 13 January, 2003; originally announced January 2003.

Comments: accepted by Phys.Rev.Lett

Journal ref: Phys. Rev. Lett. 90(20), 206602 (2003)

Electronic, vibrational and magnetic properties of a novel C_{48}N_{12} aza-fullerene

Authors: Rui-Hua Xie, Garnett W. Bryant, Vedene H. Smith Jr

Abstract: We study the structural, electronic, vibrational and magnetic properties of a novel ${\rm C}_{48}{\rm N}_{12}$ aza-fullerene using density functional theory and restricted Hartree-Fock theory. Optimized geometries and total energy of this fullerene have been calculated. We find that for ${\rm C}_{48}{\rm N}_{12}$ the total ground state energy is about -67617 eV, the HOMO-LUMO gap is about 1.9 eV… ▽ More We study the structural, electronic, vibrational and magnetic properties of a novel ${\rm C}_{48}{\rm N}_{12}$ aza-fullerene using density functional theory and restricted Hartree-Fock theory. Optimized geometries and total energy of this fullerene have been calculated. We find that for ${\rm C}_{48}{\rm N}_{12}$ the total ground state energy is about -67617 eV, the HOMO-LUMO gap is about 1.9 eV, five strong IR spectral lines are located at the vibrational frequencies, 461.5 ${\rm cm}^{-1}$, 568.4 ${\rm cm}^{-1}$, 579.3 ${\rm cm}^{-1}$, 1236.1 ${\rm cm}^{-1}$, 1338.9 ${\rm cm}^{-1}$, the Raman scattering activities and depolarization ratios are zero, and 10 NMR spectral signals are predicted. Calculations of diamagnetic shielding factor, static dipole polarizabilities and hyperpolarizabilities of ${\rm C}_{48}{\rm N}_{12}$ are performed and discussed. △ Less

Submitted 13 January, 2003; originally announced January 2003.

Comments: published in Chem.Phys.Lett

Journal ref: Chem.Phys.Lett. 368(3/4),486-494 (2003)

Raman scattering in C_{60} and C_{48}N_{12} aza-fullerene: First-principles study

Authors: Rui-Hua Xie, Garnett W. Bryant, Vedene H. Smith Jr

Abstract: We carry out large scale {\sl ab initio} calculations of Raman scattering activities and Raman-active frequencies (RAFs) in ${\rm C}_{48}{\rm N}_{12}$ aza-fullerene. The results are compared with those of ${\rm C}_{60}$. Twenty-nine non-degenerate polarized and 29 doubly-degenerate unpolarized RAFs are predicted for ${\rm C}_{48}{\rm N}_{12}$. The RAF of the strongest Raman signal in the low- an… ▽ More We carry out large scale {\sl ab initio} calculations of Raman scattering activities and Raman-active frequencies (RAFs) in ${\rm C}_{48}{\rm N}_{12}$ aza-fullerene. The results are compared with those of ${\rm C}_{60}$. Twenty-nine non-degenerate polarized and 29 doubly-degenerate unpolarized RAFs are predicted for ${\rm C}_{48}{\rm N}_{12}$. The RAF of the strongest Raman signal in the low- and high-frequency regions and the lowest and highest RAFs for ${\rm C}_{48}{\rm N}_{12}$ are almost the same as those of ${\rm C}_{60}$. The study of ${\rm C}_{60}$ reveals the importance of electron correlations and the choice of basis sets in the {\sl ab initio} calculations. Our best calculated results for ${\rm C}_{60}$ with the B3LYP hybrid density functional theory are in excellent agreement with experiment and demonstrate the desirable efficiency and accuracy of this theory for obtaining quantitative information on the vibrational properties of these molecules. △ Less

Submitted 13 January, 2003; originally announced January 2003.

Comments: submitted to Phys.Rev.B

Journal ref: Phys.Rev.B 67(15), 155404 (2003)

First-principles calculations of the structural, electronic, vibrational and magnetic properties of C_{60} and C_{48}N_{12}: a comparative study

Authors: Rui-Hua Xie, Garnett W. Bryant, Lasse Jensen, Jijun Zhao, Vedene H. Smith Jr

Abstract: In this work, we perform first-principles calculations of the structural, electronic, vibrational and magnetic properties of a novel ${\rm C}_{48}{\rm N}_{12}$ azafullerene. Full geometrical optimization shows that ${\rm C}_{48}{\rm N}_{12}$ is characterized by several distinguishing features: only one nitrogen atom per pentagon, two nitrogen atoms preferentially sitting in one hexagon,… ▽ More In this work, we perform first-principles calculations of the structural, electronic, vibrational and magnetic properties of a novel ${\rm C}_{48}{\rm N}_{12}$ azafullerene. Full geometrical optimization shows that ${\rm C}_{48}{\rm N}_{12}$ is characterized by several distinguishing features: only one nitrogen atom per pentagon, two nitrogen atoms preferentially sitting in one hexagon, ${\rm S}_{6}$ symmetry, 6 unique nitrogen-carbon and 9 unique carbon-carbon bond lengths. The highest occupied molecular orbital of ${\rm C}_{48}{\rm N}_{12}$ is a doubly degenerate level of $a_{g}$ symmetry and its lowest unoccupied molecular orbital is a nondegenerate level of $a_{u}$ symmetry. Vibrational frequency analysis predicts that ${\rm C}_{48}{\rm N}_{12}$ has in total 116 vibrational modes: 58 infrared-active and 58 Raman-active modes. ${\rm C}_{48}{\rm N}_{12}$ is also characterized by 8 $^{13}{\rm C}$ and 2 $^{15}{\rm N}$ NMR spectral signals. Compared to ${\rm C}_{60}$, ${\rm C}_{48}{\rm N}_{12}$ shows an enhanced third-order optical nonlinearities which implies potential applications in optical limiting and photonics. △ Less

Submitted 13 January, 2003; originally announced January 2003.

Comments: a long version of our manuscript submitted to J.Chem.Phys

Journal ref: J.Chem.Phys.118(19), 8621-8635 (2003)

Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions

Authors: Seungwon Lee, Lars Jonsson, John W. Wilkins, Garnett W. Bryant, Gerhard Klimeck

Abstract: The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect gap material, and InAs and CdSe as examples of typical III-V and II-VI direct-gap materials. The electron-hole Coulomb interaction is largely insensitive to both the real-space description of the atomic basis orbitals and differ… ▽ More The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect gap material, and InAs and CdSe as examples of typical III-V and II-VI direct-gap materials. The electron-hole Coulomb interaction is largely insensitive to both the real-space description of the atomic basis orbitals and different ways of optimizing the tight-binding parameters. Tight-binding parameters that are optimized to give the best effective masses significantly improve the energies of the excitonic states due to the better single-particle energies. However, the Coulomb interaction does not vary much between different parameterizations. In addition, the sensitivity of the Coulomb interaction to the choice of atomic or bitals decreases with increasing dot size. Quantitatively, tight-binding treatments of correlation effects are reliable for dots with radii larger than 15--20 angstrom. The calculated excitonic gaps are in good agreement with recent photoluminescence data for Si and CdSe but agree less well for InAs. Further, the effective range of the electron-hole exchange interaction is investigated in detail. In quantum dots of the direct-gap materials InAs and CdSe, the exchange interaction can be long-ranged, extending over the whole dot when there is no local (onsite) orthogonality between the electron and hole wave functions. By contrast, for Si quantum dots the extra phase factor due to the indirect gap effectively limits the range to about 15 angstrom, independent of the dot size. △ Less

Submitted 14 November, 2000; originally announced November 2000.

Comments: 13 pages, 8 figures

Electron-phonon scattering in quantum wires exposed to a normal magnetic field

Authors: Mher M. Aghasyan, Samvel M. Badalyan, Garnett W. Bryant

Abstract: A theory for the relaxation rates of a test electron and electron temperature in quantum wires due to deformation, piezoelectric acoustical and polar optical phonon scattering is presented. We represent intra- and inter-subband relaxation rates as an average of rate kernels weighted by electron wave functions across a wire. We exploit these expressions to calculate phonon emission power for elec… ▽ More A theory for the relaxation rates of a test electron and electron temperature in quantum wires due to deformation, piezoelectric acoustical and polar optical phonon scattering is presented. We represent intra- and inter-subband relaxation rates as an average of rate kernels weighted by electron wave functions across a wire. We exploit these expressions to calculate phonon emission power for electron intra- and inter-subband transitions in quantum wires formed by a parabolic confining potential. In a magnetic field free case we have calculated the emission power of acoustical (deformation and piezoelectric interaction) and polar optical phonons as a function of the electron initial energy for different values of the confining potential strength. In quantum wires exposed to the quantizing magnetic field normal to the wire axis, we have calculated the polar optical phonon emission power as a function of the electron initial energy and of the magnetic field. △ Less

Submitted 5 February, 2000; v1 submitted 2 February, 2000; originally announced February 2000.

Comments: 13 pages, 7 figs

Theory of imaging a photonic crystal with transmission near-field optical microscopy

Authors: Garnett W. Bryant, Eric L. Shirley, Lori S. Goldner, Eric B. McDaniel, J. W. P. Hsu, R. J. Tonucci

Abstract: While near-field scanning optical microscopy (NSOM) can provide optical images with resolution much better than the diffraction limit, analysis and interpretation of these images is often difficult. We present a theory of imaging with transmission NSOM that includes the effects of tip field, tip/sample coupling, light propagation through the sample and light collection. We apply this theory to a… ▽ More While near-field scanning optical microscopy (NSOM) can provide optical images with resolution much better than the diffraction limit, analysis and interpretation of these images is often difficult. We present a theory of imaging with transmission NSOM that includes the effects of tip field, tip/sample coupling, light propagation through the sample and light collection. We apply this theory to analyze experimental NSOM images of a nanochannel glass (NCG) array obtained in transmission mode. The NCG is a triangular array of dielectric rods in a dielectric glass matrix with a two-dimensional photonic band structure. We determine the modes for the NCG photonic crystal and simulate the observed data. The calculations show large contrast at low numerical aperture (NA) of the collection optics and detailed structure at high NA consistent with the observed images. We present calculations as a function of NA to identify how the NCG photonic modes contribute to and determine the spatial structure in these images. Calculations are presented as a function of tip/sample position, sample index contrast and geometry, and aperture size to identify the factors that determine image formation with transmission NSOM in this experiment. △ Less

Submitted 15 January, 1998; originally announced January 1998.

Comments: 28 pages of ReVTex, 14 ps figures, submitted to Phys. Rev. B

Probing quantum nanostructures with near-field optical microscopy and (vice versa)

Authors: Garnett W. Bryant

Abstract: A theory is presented to show how near-field optical microscopy can be used to probe quantum nanostructures. Calculations are done for a quantum dot. Results for different tip/dot configurations and sizes show that near-field excitation can enhance light-hole transitions, excite selection-rule breaking transitions with rates comparable to allowed transitions, and map electron-hole pair wave func… ▽ More A theory is presented to show how near-field optical microscopy can be used to probe quantum nanostructures. Calculations are done for a quantum dot. Results for different tip/dot configurations and sizes show that near-field excitation can enhance light-hole transitions, excite selection-rule breaking transitions with rates comparable to allowed transitions, and map electron-hole pair wave functions. Conversely, dot response can be used to characterize tip near-fields. △ Less

Submitted 15 October, 1997; originally announced October 1997.

Comments: 8 pages of ReVTex, 5 ps figures, submitted to Appl. Phys. Lett

Multiband theory of quantum-dot quantum wells: Dark excitons, bright excitons, and charge separation in heteronanostructures

Authors: W. Jaskolski, Garnett W. Bryant

Abstract: Electron, hole, and exciton states of multishell CdS/HgS/CdS quantum-dot quantum well nanocrystals are determined by use of a multiband theory that includes valence-band mixing, modeled with a 6-band Luttinger-Kohn Hamiltonian, and nonparabolicity of the conduction band. The multiband theory correctly describes the recently observed dark-exciton ground state and the lowest, optically active, bri… ▽ More Electron, hole, and exciton states of multishell CdS/HgS/CdS quantum-dot quantum well nanocrystals are determined by use of a multiband theory that includes valence-band mixing, modeled with a 6-band Luttinger-Kohn Hamiltonian, and nonparabolicity of the conduction band. The multiband theory correctly describes the recently observed dark-exciton ground state and the lowest, optically active, bright-exciton states. Charge separation in pair states is identified. Previous single-band theories could not describe these states or account for charge separation. △ Less

Submitted 17 September, 1997; originally announced September 1997.

Comments: 10 pages of ReVTex, 6 ps figures, submitted to Phys. Rev. B