Showing 1–50 of 52 results for author: Brunner, K

First experimental observation of zonal flows in the optimized stellarator Wendelstein 7-X

Authors: D. Carralero, T. Estrada, J. M. García-Regaña, E. Sánchez, T. Windisch, A. Alonso, E. Maragkoudakis, C. Brandt, K. J. Brunner, C. Gallego-Castillo, K. Rahbarnia, H. Thienpondt, the Wendelstein 7-X Team

Abstract: In this work, we present the first experimental evidence of the presence of zonal flow (ZF) structures in the optimized stellarator Wendelstein 7-X. Using an assortment of diagnostics, flux surface-uniform, electrostatic flow oscillations have been measured, showing a radial scale in the range of tens of ion gyroradii. Such measurements show remarkable agreement with the ZF predicted by local and… ▽ More In this work, we present the first experimental evidence of the presence of zonal flow (ZF) structures in the optimized stellarator Wendelstein 7-X. Using an assortment of diagnostics, flux surface-uniform, electrostatic flow oscillations have been measured, showing a radial scale in the range of tens of ion gyroradii. Such measurements show remarkable agreement with the ZF predicted by local and global non-linear gyrokinetic simulations. These results represent the first direct measurement of ZF in a large stellarator, suitable for the validation of models in reactor relevant conditions. △ Less

Submitted 18 June, 2024; originally announced June 2024.

Comments: Submitted to Physical Review Letters

The Realization of a Gas Puff Imaging System on the Wendelstein 7-X Stellarator

Authors: J. L. Terry, A. von Stechow, S. G. Baek, S. B. Ballinger, O. Grulke, C. von Sehren, R. Laube, C. Killer, F. Scharmer, K. J. Brunner, J. Knauer, S. Bois, the W7-X Team

Abstract: A system for studying the spatio-temporal dynamics of fluctuations in the boundary of the W7-X plasma using the Gas-Puff Imaging (GPI) technique has been designed, constructed, installed, and operated. This GPI system addresses a number of challenges specific to long-pulse superconducting devices like W7-X, including the long distance between the plasma and the vacuum vessel wall, the long distanc… ▽ More A system for studying the spatio-temporal dynamics of fluctuations in the boundary of the W7-X plasma using the Gas-Puff Imaging (GPI) technique has been designed, constructed, installed, and operated. This GPI system addresses a number of challenges specific to long-pulse superconducting devices like W7-X, including the long distance between the plasma and the vacuum vessel wall, the long distance between the plasma and diagnostic ports, the range of last closed flux surface locations for different magnetic configurations in W7-X, and management of heat loads on the system's plasma-facing components. The system features a pair of "converging-diverging" nozzles for partially collimating the gas puffed locally $\approx$135 mm radially outboard of the plasma boundary, a pop-up turning mirror for viewing the gas puff emission from the side (also acting as a shutter for the re-entrant vacuum window), and a high-throughput optical system that collects visible emission resulting from the interaction between the puffed gas and the plasma and directs it along a water-cooled re-entrant tube directly onto the 8 x 16 pixel detector array of the fast camera. The DEGAS 2 neutrals code was used to simulate the H$_α$ (656 nm) and the HeI (587 nm) line emission expected from well-characterized gas-puffs of H$_2$ and He and excited within typical edge plasma profiles in W7-X, thereby predicting line brightnesses used to reduce the risks associated with system sensitivity and placement of the field of view. Operation of GPI on W7-X shows excellent signal to noise ratios (>100) over the field of view for minimally perturbing gas puffs. The GPI system provides detailed measurements of the 2-dimensional (radial and poloidal) dynamics of plasma fluctuations in the W7-X edge, scrape-off layer, and in and around the magnetic islands that make up the island divertor configuration employed on W7-X. △ Less

Submitted 15 May, 2024; originally announced May 2024.

Comments: 30 pages, 23 figures, submitted to Review of Scientific Instruments

Balanced Quantum Hall Resistor

Authors: Kajetan M. Fijalkowski, Nan Liu, Martin Klement, Steffen Schreyeck, Karl Brunner, Charles Gould, Laurens W. Molenkamp

Abstract: The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external magnetic field, which allows to combine it with the quantum standard of voltage. Here we demonstrate a measurement scheme that increases the robustness of the z… ▽ More The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external magnetic field, which allows to combine it with the quantum standard of voltage. Here we demonstrate a measurement scheme that increases the robustness of the zero magnetic field quantum anomalous Hall resistor, allowing for higher operational currents. This is achieved by simultaneous current injection into the two disconnected perimeters of a multi-terminal Corbino device to balance the electrochemical potential between the edges, screening the electric field that drives back-scattering through the bulk, and thus improving the stability of the quantization at increased currents. This approach is not only applicable to devices based on the quantum anomalous Hall effect, but more generally can also be applied to existing quantum resistance standards that rely on the integer quantum Hall effect. △ Less

Submitted 6 February, 2024; originally announced February 2024.

Journal ref: Nature Electronics (2024)

Accelerated Bayesian inference of plasma profiles with self-consistent MHD equilibria at W7-X via neural networks

Authors: Andrea Merlo, Andrea Pavone, Daniel Böckenhoff, Ekkehard Pasch, Golo Fuchert, Kai Jakob Brunner, Kian Rahbarnia, Jonathan Schilling, Udo Höfel, Sehyun Kwak, Jakob Svensson, Thomas Sunn Pedersen, the W7-X team

Abstract: High-$\langle β\rangle$ operations require a fast and robust inference of plasma parameters with a self-consistent MHD equilibrium. Precalculated MHD equilibria are usually employed at W7-X due to the high computational cost. To address this, we couple a physics-regularized NN model that approximates the ideal-MHD equilibrium with the Bayesian modeling framework Minerva. We show the fast and robus… ▽ More High-$\langle β\rangle$ operations require a fast and robust inference of plasma parameters with a self-consistent MHD equilibrium. Precalculated MHD equilibria are usually employed at W7-X due to the high computational cost. To address this, we couple a physics-regularized NN model that approximates the ideal-MHD equilibrium with the Bayesian modeling framework Minerva. We show the fast and robust inference of plasma profiles (electron temperature and density) with a self-consistent MHD equilibrium approximated by the NN model. We investigate the robustness of the inference across diverse synthetic W7-X plasma scenarios. The inferred plasma parameters and their uncertainties are compatible with the parameters inferred using the VMEC, and the inference time is reduced by more than two orders of magnitude. This work suggests that MHD self-consistent inferences of plasma parameters can be performed between shots. △ Less

Submitted 22 May, 2023; originally announced May 2023.

Comments: 18 pages, 6 figures

Milliwatt terahertz harmonic generation from topological insulator metamaterials

Authors: Klaas-Jan Tielrooij, Alessandro Principi, David Saleta Reig, Alexander Block, Sebin Varghese, Steffen Schreyeck, Karl Brunner, Grzegorz Karczewski, Igor Ilyakov, Oleksiy Ponomaryov, Thales V. A. G. de Oliveira, Min Chen, Jan-Christoph Deinert, Carmen Gomez Carbonell, Sergio O. Valenzuela, Laurens W. Molenkamp, Tobias Kiessling, Georgy V. Astakhov, Sergey Kovalev

Abstract: Achieving efficient, high-power harmonic generation in the terahertz spectral domain has technological applications, for example in sixth generation (6G) communication networks. Massless Dirac fermions possess extremely large terahertz nonlinear susceptibilities and harmonic conversion efficiencies. However, the observed maximum generated harmonic power is limited, because of saturation effects at… ▽ More Achieving efficient, high-power harmonic generation in the terahertz spectral domain has technological applications, for example in sixth generation (6G) communication networks. Massless Dirac fermions possess extremely large terahertz nonlinear susceptibilities and harmonic conversion efficiencies. However, the observed maximum generated harmonic power is limited, because of saturation effects at increasing incident powers, as shown recently for graphene. Here, we demonstrate room-temperature terahertz harmonic generation in a Bi$_2$Se$_3$ topological insulator and topological-insulator-grating metamaterial structures with surface-selective terahertz field enhancement. We obtain a third-harmonic power approaching the milliwatt range for an incident power of 75 mW - an improvement by two orders of magnitude compared to a benchmarked graphene sample. We establish a framework in which this exceptional performance is the result of thermodynamic harmonic generation by the massless topological surface states, benefiting from ultrafast dissipation of electronic heat via surface-bulk Coulomb interactions. These results are an important step towards on-chip terahertz (opto)electronic applications. △ Less

Submitted 1 November, 2022; originally announced November 2022.

Journal ref: Light Sci Appl 11, 315 (2022)

Prevention of core particle depletion in stellarators by turbulence

Authors: H. Thienpondt, J. M. García-Regaña, I. Calvo, J. A. Alonso, J. L. Velasco, A. González-Jerez, M. Barnes, K. Brunner, O. Ford, G. Fuchert, J. Knauer, E. Pasch, L. Vanó, the Wendelstein 7-X team

Abstract: In reactor-relevant plasmas, neoclassical transport drives an outward particle flux in the core of large stellarators and predicts strongly hollow density profiles. However, this theoretical prediction is contradicted by experiments. In particular, in Wendelstein 7-X, the first large optimized stellarator, flat or weakly peaked density profiles are generally measured, indicating that neoclassical… ▽ More In reactor-relevant plasmas, neoclassical transport drives an outward particle flux in the core of large stellarators and predicts strongly hollow density profiles. However, this theoretical prediction is contradicted by experiments. In particular, in Wendelstein 7-X, the first large optimized stellarator, flat or weakly peaked density profiles are generally measured, indicating that neoclassical theory is not sufficient and that an inward contribution to the particle flux is missing in the core. In this Research Letter, it is shown that the turbulent contribution to the particle flux can explain the difference between experimental measurements and neoclassical predictions. The results of this Research Letter also prove that theoretical and numerical tools are approaching the level of maturity needed for the prediction of equilibrium density profiles in stellarator plasmas, which is a fundamental requirement for the design of operation scenarios of present devices and future reactors. △ Less

Submitted 8 November, 2023; v1 submitted 9 September, 2022; originally announced September 2022.

Comments: 8 pages, 6 figures, updated the title and incorporated the appendix into the main letter

Journal ref: Physical Review Research 5 (2023) L022053

Quantum transport and mobility spectrum of topological carriers in (001) SnTe/PbTe heterojunctions

Authors: D. Śnieżek, Jarosław Wróbel, M. Kojdecki, C. Śliwa, S. Schreyeck, K. Brunner, L. W. Molenkamp, G. Karczewski, Jerzy Wróbel

Abstract: Measurements of magnetotransport in SnTe/PbTe heterojunctions grown by the MBE technique on (001) undoped CdTe substrates were performed. At low magnetic fields, quantum corrections to conductivity were observed that may be attributed to the presence of topological states at the junction interface. For a sample with 5 nm thick SnTe layer, the data analysis suggests that midgap states are actually… ▽ More Measurements of magnetotransport in SnTe/PbTe heterojunctions grown by the MBE technique on (001) undoped CdTe substrates were performed. At low magnetic fields, quantum corrections to conductivity were observed that may be attributed to the presence of topological states at the junction interface. For a sample with 5 nm thick SnTe layer, the data analysis suggests that midgap states are actually gapped. However, the phase coherence effects in 10 nm and 20 nm SnTe/PbTe samples are fully explained assuming existence of gapless Dirac cones. Magnetotransport at higher magnetic fields is described in the framework of mobility spectrum analysis (MSA). We demonstrate that the electron- and hole-like peaks observed simultaneously for all SnTe/PbTe heterojunctions may originate from the concave and convex parts of the energy isosurface for topological states -- and not from the existence of quasiparticles both carrying negative and positive charges. This interpretation is supported by numerical calculations of conductivity tensor components for gapless (100) Dirac cones, performed within a classical model and based on the solutions of Boltzmann transport equation. Our approach shows the feasibility of MSA in application to magnetotransport measurements on topological matter. △ Less

Submitted 20 January, 2023; v1 submitted 10 August, 2022; originally announced August 2022.

Journal ref: Phys. Rev. B 107, 045103 (2023)

Macroscopic Quantum Tunneling of a Topological Ferromagnet

Authors: Kajetan M. Fijalkowski, Nan Liu, Pankaj Mandal, Steffen Schreyeck, Karl Brunner, Charles Gould, Laurens W. Molenkamp

Abstract: The recent advent of topological states of matter spawned many significant discoveries. The quantum anomalous Hall effect[1-3] is a prime example due to its potential for applications in quantum metrology[4, 5] as well as its influence on fundamental research into the underlying topological and magnetic states[6-11] and axion electrodynamics[2, 12-14]. Here, we perform electronic transport studies… ▽ More The recent advent of topological states of matter spawned many significant discoveries. The quantum anomalous Hall effect[1-3] is a prime example due to its potential for applications in quantum metrology[4, 5] as well as its influence on fundamental research into the underlying topological and magnetic states[6-11] and axion electrodynamics[2, 12-14]. Here, we perform electronic transport studies on a (V,Bi,Sb)2Te3 ferromagnetic topological insulator nanostructure in the quantum anomalous Hall regime. This allows us access to the dynamics of an individual ferromagnetic domain. The volume of the domain is estimated to be about 85 000 nm3, containing some 50 000 vanadium atoms, spread over a macroscopic distance of 115 nm. Telegraph noise resulting from the magnetization fluctuations of this domain is observed in the Hall signal. Careful analysis of the influence of temperature and external magnetic field on the domain switching statistics provides evidence for quantum tunneling of magnetization[15-22] in a macrospin state. This ferromagnetic macrospin is not only the largest magnetic object in which quantum tunneling has been observed, but also the first observation of the effect in a topological state of matter. △ Less

Submitted 8 June, 2022; originally announced June 2022.

Journal ref: Advanced Science 10, 2303165 (2023)

Design considerations of the European DEMO's IR-interferometer/polarimeter based on TRAVIS simulations

Authors: K. J. Brunner, N. Marushchenko, Y. Turkin, W. Biel, J. Knauer, M. Hirsch, R. Wolf

Abstract: Interferometry is the primary density control diagnostic for large-scale fusion devices, including ITER and DEMO. In this paper we present a ray tracing simulation based on TRAVIS accounting for relativistic effects. The study shows that measurements will over-estimate the plasma density by as much as 20 degree. In addition, we present a measurement geometry, which will enable vertical position co… ▽ More Interferometry is the primary density control diagnostic for large-scale fusion devices, including ITER and DEMO. In this paper we present a ray tracing simulation based on TRAVIS accounting for relativistic effects. The study shows that measurements will over-estimate the plasma density by as much as 20 degree. In addition, we present a measurement geometry, which will enable vertical position control during the plasma's ramp-up phase when gap-reflectometers and neutron cameras are still blind. △ Less

Submitted 31 January, 2022; v1 submitted 17 December, 2021; originally announced December 2021.

Comments: submitted to the JINST-proceedings of the International Conference on Diagnostics for Fusion Reactors 2021 in Varenna, 8 pages, 3 figures, this is the first revision

Antiferromagnetic order in MnBi2Te4 films grown on Si(111) by molecular beam epitaxy

Authors: N. Liu, S. Schreyeck, K. M. Fijalkowski, M. Kamp, K. Brunner, C. Gould, L. W. Molenkamp

Abstract: MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to observe pure antiferromagnetic order by magnetometry. We report on a detailed study of MnBi2Te4 films grown on Si(111) by MBE with elemental sources. Films of about… ▽ More MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to observe pure antiferromagnetic order by magnetometry. We report on a detailed study of MnBi2Te4 films grown on Si(111) by MBE with elemental sources. Films of about 100 nm thickness are analyzed in stoichiometric, structural, magnetic and magnetotransport properties with high accuracy. High-quality MnBi2Te4 films with nearly perfect septuple-layer structure are realized and structural defects typical for epitaxial van-der-Waals layers are analyzed. The films reveal antiferromagnetic order with a Neel temperature of 19 K, a spin-flop transition at a magnetic field of 2.5 T and a resistivity of 1.6 mOhm cm. These values are comparable to that of bulk MnBi2Te4 crystals. Our results provide an important basis for realizing and identifying single-phase MnBi2Te4 films with antiferromagnetic order grown by MBE. △ Less

Submitted 27 November, 2021; originally announced November 2021.

Quantification of systematic errors in the electron density and temperature measured with Thomson scattering at W7-X

Authors: Philipp Nelde, Golo Fuchert, Ekkehard Pasch, Marc N. A. Beurskens, Sergey A. Bozhenkov, Kai Jakob Brunner, Udo Höfel, Sehyun Kwak, Jens Meineke, Evan R. Scott, Robert C. Wolf, W7-X team

Abstract: The electron density and temperature profiles measured with Thomson scattering at the stellarator Wendelstein 7-X show features which seem to be unphysical, but so far could not be associated with any source of error considered in the data processing. A detailed Bayesian analysis reveals that errors in the spectral calibration cannot explain the features observed in the profiles. Rather, it seems… ▽ More The electron density and temperature profiles measured with Thomson scattering at the stellarator Wendelstein 7-X show features which seem to be unphysical, but so far could not be associated with any source of error considered in the data processing. A detailed Bayesian analysis reveals that errors in the spectral calibration cannot explain the features observed in the profiles. Rather, it seems that small fluctuations in the laser position are sufficient to affect the profile substantially. The impact of these fluctuations depends on the laser position itself, which, in turn, provides a method to find the optimum laser alignment in the future. △ Less

Submitted 9 August, 2023; v1 submitted 5 November, 2021; originally announced November 2021.

Quantum anomalous Hall edge channels survive up to the Curie temperature

Authors: Kajetan M. Fijalkowski, Nan Liu, Pankaj Mandal, Steffen Schreyeck, Karl Brunner, Charles Gould, Laurens W. Molenkamp

Abstract: Achieving metrological precision of quantum anomalous Hall resistance quantization at zero magnetic field so far remains limited to temperatures of the order of 20 mK, while the Curie temperature in the involved material is as high as 20 K. The reason for this discrepancy remains one of the biggest open questions surrounding the effect, and is the focus of this article. Here we show, through a car… ▽ More Achieving metrological precision of quantum anomalous Hall resistance quantization at zero magnetic field so far remains limited to temperatures of the order of 20 mK, while the Curie temperature in the involved material is as high as 20 K. The reason for this discrepancy remains one of the biggest open questions surrounding the effect, and is the focus of this article. Here we show, through a careful analysis of the non-local voltages on a multi-terminal Corbino geometry, that the chiral edge channels continue to exist without applied magnetic field up to the Curie temperature of bulk ferromagnetism of the magnetic topological insulator, and that thermally activated bulk conductance is responsible for this quantization breakdown. Our results offer important insights on the nature of the topological protection of these edge channels, provide an encouraging sign for potential applications, and establish the multi-terminal Corbino geometry as a powerful tool for the study of edge channel transport in topological materials. △ Less

Submitted 3 September, 2021; originally announced September 2021.

Journal ref: Nature Communications 12, 5599 (2021)

Any Axion Insulator Must be a Bulk Three-Dimensional Topological Insulator

Authors: K. M. Fijalkowski, N. Liu, M. Hartl, M. Winnerlein, P. Mandal, A. Coschizza, A. Fothergill, S. Grauer, S. Schreyeck, K. Brunner, M. Greiter, R. Thomale, C. Gould, L. W. Molenkamp

Abstract: In recent attempts to observe axion electrodynamics, much effort has focused on trilayer heterostructures of magnetic topological insulators, and in particular on the examination of a so-called zero Hall plateau, which has misguidedly been overstated as direct evidence of an axion insulator state. We investigate the general notion of axion insulators, which by definition must contain a nontrivial… ▽ More In recent attempts to observe axion electrodynamics, much effort has focused on trilayer heterostructures of magnetic topological insulators, and in particular on the examination of a so-called zero Hall plateau, which has misguidedly been overstated as direct evidence of an axion insulator state. We investigate the general notion of axion insulators, which by definition must contain a nontrivial volume to host the axion term. We conduct a detailed magneto-transport analysis of Chern insulators comprised of a single magnetic topological insulator layer of varying thickness as well as trilayer structures, for samples optimized to yield a perfectly quantized anomalous Hall effect. Our analysis gives evidence for a topological magneto-electric effect quantized in units of e$^2$/2h, allowing us to identify signatures of axion electrodynamics. Our observations may provide direct experimental access to electrodynamic properties of the universe beyond the traditional Maxwell equations, and challenge the hitherto proclaimed exclusive link between the observation of a zero Hall plateau and an axion insulator. △ Less

Submitted 20 May, 2021; originally announced May 2021.

Journal ref: Phys. Rev. B 103, 235111 (2021)

Femtosecond Transfer and Manipulation of Persistent Hot-Trion Coherence in a Single CdSe/ZnSe Quantum Dot

Authors: Philipp Henzler, Christian Traum, Matthias Holtkemper, David Nabben, Marcel Erbe, Doris E. Reiter, Tilmann Kuhn, Suddhassatta Mahapatra, Karl Brunner, Denis V. Seletskiy, Alfred Leitenstorfer

Abstract: Ultrafast transmission changes around the fundamental trion resonance are studied after exciting a p-shell exciton in a negatively charged II-VI quantum dot. The biexcitonic induced absorption reveals quantum beats between hot trion states at 133 GHz. While interband dephasing is dominated by relaxation of the P-shell hole within 390 fs, trionic coherence remains stored in the spin system for 85 p… ▽ More Ultrafast transmission changes around the fundamental trion resonance are studied after exciting a p-shell exciton in a negatively charged II-VI quantum dot. The biexcitonic induced absorption reveals quantum beats between hot trion states at 133 GHz. While interband dephasing is dominated by relaxation of the P-shell hole within 390 fs, trionic coherence remains stored in the spin system for 85 ps due to Pauli blocking of the triplet electron. The complex spectro-temporal evolution of transmission is explained analytically by solving the Maxwell-Liouville equations. Pump and probe polarizations provide full control over amplitude and phase of the quantum beats. △ Less

Submitted 13 January, 2021; v1 submitted 20 November, 2020; originally announced November 2020.

Journal ref: Phys. Rev. Lett. 126, 067402 (2021)

Ubiquitous impact of localised impurity states on the exchange coupling mechanism in magnetic topological insulators

Authors: Thiago R. F. Peixoto, Hendrik Bentmann, Philipp Rüßmann, Abdul-Vakhab Tcakaev, Martin Winnerlein, Steffen Schreyeck, Sonja Schatz, Raphael Crespo Vidal, Fabian Stier, Volodymyr Zabolotnyy, Robert J. Green, Chul Hee Min, Celso I. Fornari, Henriette Maaß, Hari Babu Vasili, Pierluigi Gargiani, Manuel Valvidares, Alessandro Barla, Jens Buck, Moritz Hoesch, Florian Diekmann, Sebastian Rohlf, Matthias Kalläne, Kai Rossnagel, Charles Gould , et al. (5 additional authors not shown)

Abstract: Since the discovery of the quantum anomalous Hall effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)$_2$Te$_3$ and V:(Bi,Sb)$_2$Te$_3$, the search for the exchange coupling mechanisms underlying the onset of ferromagnetism has been a central issue, and a variety of different scenarios have been put forward. By combining resonant photoemission, X-ray magnetic dichroism and mul… ▽ More Since the discovery of the quantum anomalous Hall effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)$_2$Te$_3$ and V:(Bi,Sb)$_2$Te$_3$, the search for the exchange coupling mechanisms underlying the onset of ferromagnetism has been a central issue, and a variety of different scenarios have been put forward. By combining resonant photoemission, X-ray magnetic dichroism and multiplet ligand field theory, we determine the local electronic and magnetic configurations of V and Cr impurities in (Bi,Sb)$_2$Te$_3$. While strong pd hybridisation is found for both dopant types, their 3d densities of states show pronounced differences. State-of-the-art first-principles calculations show how these impurity states mediate characteristic short-range pd exchange interactions, whose strength sensitively varies with the position of the 3d states relative to the Fermi level. Measurements on films with varying host stoichiometry support this trend. Our results establish the essential role of impurity-state mediated exchange interactions in the magnetism of MTI. △ Less

Submitted 15 January, 2020; originally announced January 2020.

Journal ref: Npj Quantum Materials 5, 87 (2020)

Heat and particle flux detachment with stable plasma conditions in the Wendelstein 7-X stellarator fusion experiment

Authors: Marcin Jakubowski, Ralf König, Oliver Schmitz, Yuhe Feng, Maciej Krychowiak, Matthias Otte, Felix Reimold, Andreas Dinklage, Peter Drewelow, Florian Effenberg, Yu Gao, Holger Niemann, Georg Schlisio, Andrea Pavone, Thomas Sunn Pedersen, Uwe Wenzel, Daihong Zhang, Sebastijan Brezinsek, Sergey Bozhenkov, Kai Jakob Brunner, Daniel Carralero, Ken Hammond, Golo Fuchert, Jens Knauer, Andreas Langenberg , et al. (8 additional authors not shown)

Abstract: Reduction of particle and heat fluxes to plasma facing components is critical to achieve stable conditions for both the plasma and the plasma material interface in magnetic confinement fusion experiments. A stable and reproducible plasma state in which the heat flux is almost completely removed from the material surfaces was discovered recently in the Wendelstein 7-X stellarator experiment. At the… ▽ More Reduction of particle and heat fluxes to plasma facing components is critical to achieve stable conditions for both the plasma and the plasma material interface in magnetic confinement fusion experiments. A stable and reproducible plasma state in which the heat flux is almost completely removed from the material surfaces was discovered recently in the Wendelstein 7-X stellarator experiment. At the same time also particle fluxes are reduced such that material erosion can be mitigated. Sufficient neutral pressure was reached to maintain stable particle exhaust for density control in this plasma state. This regime could be maintained for up to 28 seconds with a minimum feedback control. △ Less

Submitted 10 January, 2020; v1 submitted 7 January, 2020; originally announced January 2020.

Comments: Aimed at Physical Review Letters

Coexistence of surface and bulk ferromagnetism mimics skyrmion Hall effect in a topological insulator

Authors: Kajetan M. Fijalkowski, Matthias Hartl, Martin Winnerlein, Pankaj Mandal, Steffen Schreyeck, Karl Brunner, Charles Gould, Laurens W. Molenkamp

Abstract: Here we report the investigation of the anomalous Hall effect in the magnetically doped topological insulator (V,Bi,Sb)2Te3. We find it contains two contributions of opposite sign. Both components are found to depend differently on carrier density, leading to a sign inversion of the total anomalous Hall effect as a function of applied gate voltage. The two contributions are found to have different… ▽ More Here we report the investigation of the anomalous Hall effect in the magnetically doped topological insulator (V,Bi,Sb)2Te3. We find it contains two contributions of opposite sign. Both components are found to depend differently on carrier density, leading to a sign inversion of the total anomalous Hall effect as a function of applied gate voltage. The two contributions are found to have different magnetization reversal fields, which in combination with a temperature dependent study points towards the coexistence of two ferromagnetic orders in the system. Moreover, we find that the sign of total anomalous Hall response of the system depends on the thickness and magnetic do** density of the magnetic layer. The thickness dependence suggests that the two ferromagnetic components originate from the surface and bulk of the magnetic topological insulator film. We believe that our observations provide insight on the magnetic behavior, and thus will contribute to an eventual understanding of the origin of magnetism in this material class. In addition, our data bears a striking resemblance to anomalous Hall signals often associated with skyrmion contributions. Our analysis provides a straightforward explanation for both the magnetic field dependence of the Hall signal and the observed change in sign without needing to invoke skyrmions, and thus suggest that caution is needed when making claims of effects from skyrmion phases. △ Less

Submitted 5 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. X 10, 011012 (2020)

Compensation of phase drifts caused by ambient humidity, temperature and pressure changes for continuously operating interferometers

Authors: K. J. Brunner, J. Knauer, J. Meineke, M. Stern, M. Hirsch, B. Kursinski, R. C. Wolf, the W7-X team

Abstract: Fusion experiments rely heavily on the measurement of the line-integrated electron density by interferometry for density feed-back control. In recent years the discharge length has increased dramatically and is continuing to rise, resulting in environmentally induced phase drifts to become an increasingly worrisome subject, since they falsify the interferometer's measurement of the density. Especi… ▽ More Fusion experiments rely heavily on the measurement of the line-integrated electron density by interferometry for density feed-back control. In recent years the discharge length has increased dramatically and is continuing to rise, resulting in environmentally induced phase drifts to become an increasingly worrisome subject, since they falsify the interferometer's measurement of the density. Especially in larger Tokamaks the loss of density control due to uncontrolled changes in the optical path length can have a disastrous outcome. The control of environmental parameters in large diagnostic/experimental halls is costly and sometimes infeasible and in some cases cannot be retro-fitted to an existing machine. In this report we present a very cheap (ca. 100 EUR), easily retro-fitted, real-time capable phase compensation scheme for interferometers measuring dispersive media over long time scales. The method is not limited to fusion, but can be applied to any continuously measuring interferometer measuring a dispersive medium. It has been successfully applied to the Wendelstein 7-X density feed-back interferometer. △ Less

Submitted 5 November, 2019; originally announced November 2019.

Comments: 11 pages, 5 figures

First Results from an Event Synchronized -- High Repetition Thomson Scattering System at Wendelstein 7-X

Authors: Hannes Damm, Ekkehard Pasch, Andreas Dinklage, Jürgen Baldzuhn, Sergey Bozhenkov, Kai Jakob Brunner, Florian Effenberg, Golo Fuchert, Joachim Geiger, Jeffrey Harris, Jens Knauer, Petra Kornejew, Thierry Kremeyer, Maciej Krychowiak, Jonathan Schilling, Oliver Schmitz, Evan Scott, Victoria Winters, the Wendelstein 7-X Team

Abstract: The Wendelstein 7-X (W7-X) Thomson scattering (TS) diagnostic was upgraded to transiently achieve kilohertz sampling rates combined with adjustable measuring times. The existing Nd:YAG lasers are employed to repetitively emit "bursts", i.e. multiple laser pulses in a short time interval. Appropriately timing burst in the three available lasers, up to twelve evenly spaced consecutive measurements p… ▽ More The Wendelstein 7-X (W7-X) Thomson scattering (TS) diagnostic was upgraded to transiently achieve kilohertz sampling rates combined with adjustable measuring times. The existing Nd:YAG lasers are employed to repetitively emit "bursts", i.e. multiple laser pulses in a short time interval. Appropriately timing burst in the three available lasers, up to twelve evenly spaced consecutive measurements per burst are possible. The pulse-to-pulse increment within a burst can be tuned from 2 ms to 33.3 ms (500 kHz - 30 Hz). Additionally, an event trigger system was developed to synchronize the burst Thomson scattering measurements to plasma events. Exemplary, a case of fast electron density and temperature evolution after cryogenic H2 pellet injection is presented in order to demonstrate the capabilities of the method. △ Less

Submitted 13 August, 2019; v1 submitted 30 June, 2019; originally announced July 2019.

Comments: 11 pages, 5 figures, To be published as proceeding to the 3rd European Conference on Plasma Diagnostics 2019 in Lisbon in the Proceedings Section of the Journal of Instrumentation (JINST)

Breaking crystalline symmetry of epitaxial SnTe films by strain

Authors: Steffen Schreyeck, Karl Brunner, Laurens W. Molenkamp, Grzegorz Karczewski, Martin Schmitt, Paolo Sessi, Matthias Vogt, Stefan Wilfert, Artem B. Odobesko, Matthias Bode

Abstract: SnTe belongs to the recently discovered class of topological crystalline insulators. Here we study the formation of line defects which break crystalline symmetry by strain in thin SnTe films. Strained SnTe(111) films are grown by molecular beam epitaxy on lattice- and thermal expansion coefficient-mismatched CdTe. To analyze the structural properties of the SnTe films we applied {\em in-situ} refl… ▽ More SnTe belongs to the recently discovered class of topological crystalline insulators. Here we study the formation of line defects which break crystalline symmetry by strain in thin SnTe films. Strained SnTe(111) films are grown by molecular beam epitaxy on lattice- and thermal expansion coefficient-mismatched CdTe. To analyze the structural properties of the SnTe films we applied {\em in-situ} reflection high energy electron diffraction, x-ray reflectometry, high resolution x-ray diffraction, reciprocal space map**, and scanning tunneling microscopy. This comprehensive analytical approach reveals a twinned structure, tensile strain, bilayer surface steps and dislocation line defects forming a highly ordered dislocation network for thick films with local strains up to 31\% breaking the translational crystal symmetry. △ Less

Submitted 30 November, 2018; originally announced November 2018.

Comments: 15 pages, 4 figures

Journal ref: Phys. Rev. Materials 3, 024203 (2019)

NbTi/Nb/Cu multilayer shield for the superconducting shield (SuShi) septum

Authors: Daniel Barna, Martin Novak, Kristof Brunner, Carlo Petrone, Miroslav Atanasov, Jerome Feuvrier, Max Pascal

Abstract: A passive superconducting shield was proposed earlier to realize a high-field (3-4 T) septum magnet for the Future Circular Collider. This paper presents the experimental results of a potential shield material, a NbTi/Nb/Cu multilayer sheet. A cylindrical shield was constructed from two halves, each consisting of 4 layers with a total thickness of 3.2~mm, and inserted into the bore of a spare LHC… ▽ More A passive superconducting shield was proposed earlier to realize a high-field (3-4 T) septum magnet for the Future Circular Collider. This paper presents the experimental results of a potential shield material, a NbTi/Nb/Cu multilayer sheet. A cylindrical shield was constructed from two halves, each consisting of 4 layers with a total thickness of 3.2~mm, and inserted into the bore of a spare LHC dipole corrector magnet (MCBY). At 4.2~K, up to about 3.1~T at the shield's surface only a leakage field of 12.5~mT was measured inside the shield. This can be attributed to the mis-alignment of the two half cylinders, as confirmed by finite element simulations. With a better configuration we estimate the shield's attenuation to be better than $\mathbf{4\times 10^{-5}}$, acceptable for the intended application. Above 3.1~T the field penetrated smoothly. Below that limit no flux jumps were observed even at the highest achievable ramp rate of more than 50~mT/s at the shield's surface. A 'degaussing' cycle was used to eliminate the effects of the field trapped in the thick wall of the shield, which could otherwise distort the homogeneous field pattern at the extracted beam's position. At 1.9~K the shield's performance was superior to that at 4.2~K, but it suffered from flux jumps. △ Less

Submitted 12 September, 2018; originally announced September 2018.

Zero-field quantum anomalous Hall metrology as a step towards a universal quantum standard unit system

Authors: Martin Goetz, Kajetan M. Fijalkowski, Eckart Pesel, Matthias Hartl, Steffen Schreyeck, Martin Winnerlein, Stefan Grauer, Hansjoerg Scherer, Karl Brunner, Charles Gould, Franz J. Ahlers, Laurens W. Molenkamp

Abstract: In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to now, however, the resistance was experimentally assessed with standard transport measurement techniques which are difficult to trace to the von-Klitzing constant R$_K$ with high precision. Here, we pre… ▽ More In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to now, however, the resistance was experimentally assessed with standard transport measurement techniques which are difficult to trace to the von-Klitzing constant R$_K$ with high precision. Here, we present a metrologically comprehensive measurement, including a full uncertainty budget, of the resistance quantization of V-doped (Bi,Sb)$_2$Te$_3$ devices without external magnetic field. We established as a new upper limit for a potential deviation of the quantized anomalous Hall resistance from RK a value of 0.26 +- 0.22 ppm, the smallest and most precise value reported to date. This provides another major step towards realization of the zero-field quantum resistance standard which in combination with Josephson effect will provide the universal quantum units standard in the future. △ Less

Submitted 11 October, 2017; originally announced October 2017.

Journal ref: Appl. Phys. Lett. 112, 072102 (2018)

Scaling of the Quantum Anomalous Hall Effect as an Indicator of Axion Electrodynamics

Authors: S. Grauer, K. M. Fijalkowski, S. Schreyeck, M. Winnerlein, K. Brunner, R. Thomale, C. Gould, L. W. Molenkamp

Abstract: We report on the scaling behavior of V-doped (Bi,Sb)$_2$Te$_3$ samples in the quantum anomalous Hall regime for samples of various thickness. While previous quantum anomalous Hall measurements showed the same scaling as expected from a two-dimensional integer quantum Hall state, we observe a dimensional crossover to three spatial dimensions as a function of layer thickness. In the limit of a suffi… ▽ More We report on the scaling behavior of V-doped (Bi,Sb)$_2$Te$_3$ samples in the quantum anomalous Hall regime for samples of various thickness. While previous quantum anomalous Hall measurements showed the same scaling as expected from a two-dimensional integer quantum Hall state, we observe a dimensional crossover to three spatial dimensions as a function of layer thickness. In the limit of a sufficiently thick layer, we find scaling behavior matching the flow diagram of two parallel conducting topological surface states of a three-dimensional topological insulator each featuring a fractional shift of $\frac{1}{2} e^2/h$ in the flow diagram Hall conductivity, while we recover the expected integer quantum Hall behavior for thinner layers. This constitutes the observation of a distinct type of quantum anomalous Hall effect, resulting from $\frac{1}{2} e^2/h$ Hall conductance quantization of three-dimensional topological insulator surface states, in an experiment which does not require decomposition of signal to separate the contribution of two surfaces. This provides a possible experimental link between quantum Hall physics and axion electrodynamics. △ Less

Submitted 14 June, 2017; originally announced June 2017.

Comments: 4+6 pages, 5+9 figures

Journal ref: Phys. Rev. Lett. 118, 246801 (2017)

Epitaxy and Structural Properties of (V,Bi,Sb)$_2$Te$_3$ Layers Exhibiting the Quantum Anomalous Hall Effect

Authors: M. Winnerlein, S. Schreyeck, S. Grauer, S. Rosenberger, K. M. Fijalkowski, C. Gould, K. Brunner, L. W. Molenkamp

Abstract: The influence of Sb content, substrate type and cap layers on the quantum anomalous Hall effect observed in V-doped (Bi,Sb)$_2$Te$_3$ magnetic topological insulators is investigated. Thin layers showing excellent quantization are reproducibly deposited by molecular beam epitaxy at growth conditions effecting a compromise between controlled layer properties and high crystalline quality. The Sb cont… ▽ More The influence of Sb content, substrate type and cap layers on the quantum anomalous Hall effect observed in V-doped (Bi,Sb)$_2$Te$_3$ magnetic topological insulators is investigated. Thin layers showing excellent quantization are reproducibly deposited by molecular beam epitaxy at growth conditions effecting a compromise between controlled layer properties and high crystalline quality. The Sb content can be reliably determined from the in-plane lattice constant measured by X-ray diffraction, even in thin layers. This is the main layer parameter to be optimized in order to approach charge neutrality. Within a narrow range at about 80% Sb content, the Hall resistivity shows a maximum of about 10 k$Ω$ at 4 K and quantizes at mK temperatures. Under these conditions, thin layers grown on Si(111) or InP(111) and with or without a Te cap exhibit quantization. The quantization persists independently of the interfaces between cap, layer and substrate, the limited crystalline quality, and the degradation of the layer proving the robustness of the quantum anomalous Hall effect. △ Less

Submitted 4 July, 2017; v1 submitted 19 April, 2017; originally announced April 2017.

Journal ref: Phys. Rev. Materials 1, 011201 (2017)

Impurity states in the magnetic topological insulator V:(Bi,Sb)$_2$Te$_3$

Authors: Thiago R. F. Peixoto, Hendrik Bentmann, Steffen Schreyeck, Martin Winnerlein, Christoph Seibel, Henriette Maaß, Mohammed Al-Baidhani, Katharina Treiber, Sonja Schatz, Stefan Grauer, Charles Gould, Karl Brunner, Arthur Ernst, Laurens W. Molenkamp, Friedrich Reinert

Abstract: The ferromagnetic topological insulator V:(Bi,Sb)$_2$Te$_3$ has been recently reported as a quantum anomalous Hall (QAH) system. Yet the microscopic origins of the QAH effect and the ferromagnetism remain unclear. One key aspect is the contribution of the V atoms to the electronic structure. Here the valence band of V:(Bi,Sb)$_2$Te$_3$ thin films was probed in an element-specific way by resonant p… ▽ More The ferromagnetic topological insulator V:(Bi,Sb)$_2$Te$_3$ has been recently reported as a quantum anomalous Hall (QAH) system. Yet the microscopic origins of the QAH effect and the ferromagnetism remain unclear. One key aspect is the contribution of the V atoms to the electronic structure. Here the valence band of V:(Bi,Sb)$_2$Te$_3$ thin films was probed in an element-specific way by resonant photoemission spectroscopy. The signature of the V $3d$ impurity band was extracted, and exhibits a high density of states near Fermi level. First-principles calculations support the experimental results and indicate the coexistence of ferromagnetic superexchange and double exchange interactions. The observed impurity band is thus expected to contribute to the ferromagnetism via the interplay of different mechanisms. △ Less

Submitted 5 October, 2016; v1 submitted 6 July, 2016; originally announced July 2016.

Comments: 5 pages, 3 figures, figure 3 changed, new references and discussion included

Journal ref: Phys. Rev. B 94, 195140 (2016)

Kinetic limitation of chemical ordering in Bi$_2$Te$_{3-x}$Se$_x$ layers grown by molecular beam epitaxy

Authors: S. Schreyeck, K. Brunner, A. Kirchner, U. Bass, S. Grauer, C. Schumacher, C. Gould, G. Karczewski, J. Geurts, L. W. Molenkamp

Abstract: We study the chemical ordering in Bi$_2$Te$_{3-x}$Se$_x$ grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x = 0 to 3, and determine their material properties using energy dispersive X-ray spectroscopy, X-ray diffraction and Raman spectroscopy. By fitting the parameters of a kinetic growth model to these results, we obtain a consistent descriptio… ▽ More We study the chemical ordering in Bi$_2$Te$_{3-x}$Se$_x$ grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x = 0 to 3, and determine their material properties using energy dispersive X-ray spectroscopy, X-ray diffraction and Raman spectroscopy. By fitting the parameters of a kinetic growth model to these results, we obtain a consistent description of growth at a microscopic level. Our main finding is that despite the incorporation of Se in the central layer being much more probable than that of Te, the formation of a fully ordered Te-Bi-Se-Bi-Te layer is prevented by kinetic of the growth process. Indeed, the Se concentration in the central layer of Bi$_2$Te$_2$Se$_1$ reaches a maximum of only $\approx$ 75% even under ideal growth conditions. A second finding of our work is that the intensity ratio of the 0 0 12 and 0 0 6 X-ray reflections serves as an experimentally accessible quantitative measure of the degree of ordering in these films. △ Less

Submitted 29 February, 2016; originally announced February 2016.

Comments: Accepted for publication in Journal of Physics: Condensed Matter (JPCM)

Journal ref: J. Phys.: Condens. Matter 28 (2016) 145002

Genetically designed biomolecular cap** system for mesoporous silica nanoparticles enables receptor-mediated cell uptake and controlled drug release

Authors: Stefan Datz, Christian Argyo, Michael Gattner, Veronika Weiss, Korbinian Brunner, Johanna Bretzler, Constantin von Schirnding, Fabio Spada, Hanna Engelke, Milan Vrabel, Christoph Bräuchle, Thomas Carell, Thomas Bein

Abstract: Effective and controlled drug delivery systems with on-demand release and targeting abilities have received enormous attention for biomedical applications. Here, we describe a novel enzyme-based cap system for mesoporous silica nanoparticles (MSNs) that is directly combined with a targeting ligand via bio-orthogonal click chemistry. The cap** system is based on the pH-responsive binding of an ar… ▽ More Effective and controlled drug delivery systems with on-demand release and targeting abilities have received enormous attention for biomedical applications. Here, we describe a novel enzyme-based cap system for mesoporous silica nanoparticles (MSNs) that is directly combined with a targeting ligand via bio-orthogonal click chemistry. The cap** system is based on the pH-responsive binding of an aryl-sulfonamide-functionalized MSN and the enzyme carbonic anhydrase (CA). An unnatural amino acid (UAA) containing a norbornene moiety was genetically incorporated into CA. This UAA allowed for the site-specific bio-orthogonal attachment of even very sensitive targeting ligands such as folic acid and anandamide. This leads to specific receptor-mediated cell and stem cell uptake. We demonstrate the successful delivery and release of the chemotherapeutic agent Actinomycin D to KB cells. This novel nanocarrier concept provides a promising platform for the development of precisely controllable and highly modular theranostic systems. △ Less

Submitted 13 October, 2015; originally announced October 2015.

Comments: 40 pages, Article including Supporting Information

Observations of 2D Doppler backscattering on MAST

Authors: D. A. Thomas, K. J. Brunner, S. J. Freethy, B. K. Huang, V. F. Shevchenko, R. G. L. Vann

Abstract: The Synthetic Aperture Microwave Imaging (SAMI) diagnostic has conducted proof-of-principle 2D Doppler backscattering (DBS) experiments on MAST. SAMI actively probes the plasma edge using a wide (+-40 degrees vertical and horizontal) and tuneable (10-35.5 GHz) beam. The Doppler backscattered signal is digitised in vector form using an array of eight Vivaldi PCB antennas. This allows the receiving… ▽ More The Synthetic Aperture Microwave Imaging (SAMI) diagnostic has conducted proof-of-principle 2D Doppler backscattering (DBS) experiments on MAST. SAMI actively probes the plasma edge using a wide (+-40 degrees vertical and horizontal) and tuneable (10-35.5 GHz) beam. The Doppler backscattered signal is digitised in vector form using an array of eight Vivaldi PCB antennas. This allows the receiving array to be focused in any direction within the field of view simultaneously to an angular range of 6-24 degrees FWHM at 10-34.5 GHz. This capability is unique to SAMI and is an entirely novel way of conducting DBS experiments. In this paper the feasibility of conducting 2D DBS experiments is explored. Initial measurements of phenomena observed on conventional DBS experiments are presented; such as momentum injection from neutral beams and an abrupt change in power and turbulence velocity coinciding with the onset of H-mode. In addition, being able to carry out 2D DBS imaging allows a measurement of magnetic pitch angle to be made; preliminary results are presented. Capabilities gained through steering a beam using a phased array and the limitations of this technique are discussed. △ Less

Submitted 23 July, 2015; originally announced July 2015.

Coincidence of Superparamagnetism and perfect quantization in the Quantum Anomalous Hall state

Authors: S. Grauer, S. Schreyeck, M. Winnerlein, K. Brunner, C. Gould, L. W. Molenkamp

Abstract: Topological insulators doped with transition metals have recently been found to host a strong ferromagnetic state with perpendicular to plane anisotropy as well as support a quantum Hall state with edge channel transport, even in the absence of an external magnetic field. It remains unclear however why a robust magnetic state should emerge in materials of relatively low crystalline quality and dil… ▽ More Topological insulators doped with transition metals have recently been found to host a strong ferromagnetic state with perpendicular to plane anisotropy as well as support a quantum Hall state with edge channel transport, even in the absence of an external magnetic field. It remains unclear however why a robust magnetic state should emerge in materials of relatively low crystalline quality and dilute magnetic do**. Indeed, recent experiments suggest that the ferromagnetism exhibits at least some superparamagnetic character. We report on transport measurements in a sample that shows perfect quantum anomalous Hall quantization, while at the same time exhibits traits in its transport data which suggest inhomogeneities. We speculate that this may be evidence that the percolation path interpretation used to explain the transport during the magnetic reversal may actually have relevance over the entire field range. △ Less

Submitted 1 September, 2015; v1 submitted 17 July, 2015; originally announced July 2015.

Comments: 5 pages, 4 figure

Journal ref: Phys. Rev. B 92, 201304 (2015)

Magneto-optics of massive Dirac fermions in bulk Bi2Se3

Authors: M. Orlita, B. A. Piot, G. Martinez, N. K. Sampath Kumar, C. Faugeras, M. Potemski, C. Michel, E. M. Hankiewicz, T. Brauner, Č. Drašar, S. Schreyeck, S. Grauer, K. Brunner, C. Gould, C. Brüne, L. W. Molenkamp

Abstract: We report on magneto-optical studies of Bi2Se3, a representative member of the 3D topological insulator family. Its electronic states in bulk are shown to be well described by a simple Dirac-type Hamiltonian for massive particles with only two parameters: the fundamental bandgap and the band velocity. In a magnetic field, this model implies a unique property - spin splitting equal to twice the cyc… ▽ More We report on magneto-optical studies of Bi2Se3, a representative member of the 3D topological insulator family. Its electronic states in bulk are shown to be well described by a simple Dirac-type Hamiltonian for massive particles with only two parameters: the fundamental bandgap and the band velocity. In a magnetic field, this model implies a unique property - spin splitting equal to twice the cyclotron energy: Es = 2Ec. This explains the extensive magneto-transport studies concluding a fortuitous degeneracy of the spin and orbital split Landau levels in this material. The Es = 2Ec match differentiates the massive Dirac electrons in bulk Bi2Se3 from those in quantum electrodynamics, for which Es = Ec always holds. △ Less

Submitted 10 April, 2015; originally announced April 2015.

Comments: 5 pages, 3 figures and Supplementary materials, to be published in Physical Review Letters

Journal ref: Phys. Rev. Lett. 114, 186401 (2015)

Suppressing twin formation in Bi2Se3 thin films

Authors: N. V. Tarakina, S. Schreyeck, M. Luysberg, S. Grauer, C. Schumacher, G. Karczewski, K. Brunner, C. Gould, H. Buhmann, R. E. Dunin-Borkowski, L. W. Molenkamp

Abstract: The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray reflectivity, atomic force microscopy and probe-corrected scanning transmission electron microscopy. The use of a rough Fe-doped InP(111)B substrate results in complete s… ▽ More The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray reflectivity, atomic force microscopy and probe-corrected scanning transmission electron microscopy. The use of a rough Fe-doped InP(111)B substrate results in complete suppression of twin formation in the Bi2Se3 thin films and a perfect interface between the films and their substrates. The only type of structural defects that persist in the "twin-free" films is an antiphase domain boundary, which is associated with variations in substrate height. It is also shown that the substrate surface termination determines which family of twin domains dominates. △ Less

Submitted 22 March, 2015; originally announced March 2015.

Journal ref: Adv. Mater. Interfaces 1 (2014) 1400134

Molecular beam epitaxy of high structural quality Bi2Se3 on lattice matched InP(111) substrates

Authors: S. Schreyeck, N. V. Tarakina, G. Karczewski, C. Schumacher, T. Borzenko, C. Bruene, H. Buhmann, C. Gould, K. Brunner, L. W. Molenkamp

Abstract: Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality compared to layers deposited on other substrates. The measured full width at half maximum of the rocking curve is Delta omega=13 arcsec, and the (omega-2theta) sc… ▽ More Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality compared to layers deposited on other substrates. The measured full width at half maximum of the rocking curve is Delta omega=13 arcsec, and the (omega-2theta) scans exhibit clear layer thickness fringes. Atomic force microscope images show triangular twin domains with sizes increasing with layer thickness. The structural quality of the domains is confirmed on the microscopic level by transmission electron microscopy. △ Less

Submitted 14 February, 2013; originally announced February 2013.

Comments: 4 pages, 4 figures

Journal ref: Appl. Phys. Lett. 102, 041914 (2013)

Diffusion thermopower of (Ga,Mn)As/GaAs tunnel junctions

Authors: Ts. Naydenova, P. Dürrenfeld, K. Tavakoli, N. Pegard, L. Ebel, K. Pappert, K. Brunner, C. Gould, L. W. Molenkamp

Abstract: We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy derivative of the density of states in the magnetic material, and thus has a strongly anisotropic response to the direction of magnetization in the material. The effect… ▽ More We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy derivative of the density of states in the magnetic material, and thus has a strongly anisotropic response to the direction of magnetization in the material. The effect will have relevance to the operation of semiconductor spintronic devices, and may indeed already play a role in correctly interpreting the details of some earlier spin injection studies. △ Less

Submitted 28 October, 2011; originally announced October 2011.

Fully electrically read-write device out of a ferromagnetic semiconductor

Authors: S. Mark, P. Dürrenfeld, K. Pappert, L. Ebel, K. Brunner, C. Gould, L. W. Molenkamp

Abstract: We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunneling anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device can be used to desi… ▽ More We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunneling anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device can be used to design a electrically programmable memory and logic device. △ Less

Submitted 20 December, 2010; originally announced December 2010.

Comments: 4 pages, 4 figures

Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer

Authors: R. G. Dengel, C. Gould, J. Wenisch, K. Brunner, G. Schmidt, L. W. Molenkamp

Abstract: We use lithographically induced strain relaxation to periodically modulate the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral magnetoresistance device where two non-volatile magnetic states exist at zero external magnetic field with resistances resulting from the orientation of two lithographically defined regions in a single and contiguous layer. We use lithographically induced strain relaxation to periodically modulate the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral magnetoresistance device where two non-volatile magnetic states exist at zero external magnetic field with resistances resulting from the orientation of two lithographically defined regions in a single and contiguous layer. △ Less

Submitted 21 January, 2009; originally announced January 2009.

Comments: 5 pages, 7 figures

Journal ref: New Journal of Physics 10 (2008) 073001 (9pp)

Independent magnetization behavior of a ferromagnetic metal/semiconductor hybrid system

Authors: S. Mark, C. Gould, K. Pappert, J. Wenisch, K. Brunner, G. Schmidt, L. W. Molenkamp

Abstract: We report the discovery of an effect where two ferromagnetic materials, one semiconductor ((Ga,Mn)As) and one metal (permalloy), can be directly deposited on each other and still switch their magnetization independently. We use this independent magnetization behavior to create various resistance states dependent on the magnetization direction of the individual layers. At zero magnetic field a tw… ▽ More We report the discovery of an effect where two ferromagnetic materials, one semiconductor ((Ga,Mn)As) and one metal (permalloy), can be directly deposited on each other and still switch their magnetization independently. We use this independent magnetization behavior to create various resistance states dependent on the magnetization direction of the individual layers. At zero magnetic field a two layer device can reach up to four non-volatile resistance states. △ Less

Submitted 2 December, 2008; originally announced December 2008.

Non-thermal photocoercivity effect in a ferromagnetic semiconductor

Authors: G. V. Astakhov, H. Hoffmann, V. L. Korenev, T. Kiessling, J. Schwittek, G. M. Schott, C. Gould, W. Ossau, K. Brunner, L. W. Molenkamp

Abstract: We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a m… ▽ More We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a mechanism based on the light-induced lowering of the domain wall pinning energy. The PCE is local and reversible, allowing writing and erasing of magnetic images using light. △ Less

Submitted 22 October, 2008; originally announced October 2008.

Journal ref: Phys. Rev. Lett. 102, 187401 (2009)

Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As

Authors: K. Pappert, C. Gould, M. Sawicki, J. Wenisch, K. Brunner, G. Schmidt, L. W. Molenkamp

Abstract: This paper discusses transport methods for the investigation of the (Ga,Mn)As magnetic anisotropy. Typical magnetoresistance behaviour for different anisotropy types is discussed, focusing on an in depth discussion of the anisotropy fingerprint technique and extending it to layers with primarily uniaxial magnetic anisotropy. We find that in all (Ga,Mn)As films studied, three anisotropy component… ▽ More This paper discusses transport methods for the investigation of the (Ga,Mn)As magnetic anisotropy. Typical magnetoresistance behaviour for different anisotropy types is discussed, focusing on an in depth discussion of the anisotropy fingerprint technique and extending it to layers with primarily uniaxial magnetic anisotropy. We find that in all (Ga,Mn)As films studied, three anisotropy components are always present. The primary biaxial along ([100] and [010]) along with both uniaxial components along the [110] and [010] crystal directions which are often reported separately. Various fingerprints of typical (Ga,Mn)As transport samples at 4 K are included to illustrate the variation of the relative strength of these anisotropy terms. We further investigate the temperature dependence of the magnetic anisotropy and the domain wall nucleation energy with the help of the fingerprint method. △ Less

Submitted 29 February, 2008; originally announced February 2008.

Journal ref: New J. Phys. 9 (2007) 354

An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material

Authors: C. Gould, S. Mark, K. Pappert, G. Dengel, J. Wenisch, R. P. Campion, A. W. Rushforth, D. Chiba, Z. Li, X. Liu, W. Van Roy, H. Ohno, J. K. Furdyna, B. Gallagher, K. Brunner, G. Schmidt, L. W. Molenkamp

Abstract: This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify contributions of the various higher order anisotropy terms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all… ▽ More This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify contributions of the various higher order anisotropy terms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all medium doped (Ga,Mn)As layers typically used in transport measurement, with the amplitude of these uniaxial terms being characteristic of the individual layers. △ Less

Submitted 28 February, 2008; originally announced February 2008.

Control of magnetic anisotropy in (Ga,Mn)As by lithography-induced strain relaxation

Authors: J. Wenisch, C. Gould, L. Ebel, J. Storz, K. Pappert, M. J. Schmidt, C. Kumpf, G. Schmidt, K. Brunner, L. W. Molenkamp

Abstract: We obtain control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using sophisticated X-ray techniques. The magnetic anisotropy before patterning of the layer, which shows biaxial easy axes along [100] and [010], is replaced by a hard axis in the direction of large elastic strain relaxation and… ▽ More We obtain control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using sophisticated X-ray techniques. The magnetic anisotropy before patterning of the layer, which shows biaxial easy axes along [100] and [010], is replaced by a hard axis in the direction of large elastic strain relaxation and a uniaxial easy axis in the direction where pseudomorphic conditions are retained. This strong anisotropy can not be explained by shape anisotropy and is attributed solely to lattice strain relaxation. Upon increasing the uniaxial strain anisotropy in the (Ga,Mn)As stripes, we also observe an increase in magnetic anisotropy. △ Less

Submitted 19 January, 2007; originally announced January 2007.

Journal ref: Phys. Rev. Lett. 99, 077201 (2007)

Exploiting Locally Imposed Anisotropies in (Ga,Mn)As: a Non-volatile Memory Device

Authors: K. Pappert, S. Hümpfner, C. Gould, J. Wenisch, K. Brunner, G. Schmidt, L. W. Molenkamp

Abstract: Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in which we study transport through a constriction separating two regions whose magnetization direction differs by 90 degrees. We find that the resistance of th… ▽ More Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in which we study transport through a constriction separating two regions whose magnetization direction differs by 90 degrees. We find that the resistance of the constriction depends on the flow of the magnetic field lines in the constriction region and demonstrate that such a structure constitutes a non-volatile memory device. △ Less

Submitted 19 January, 2007; originally announced January 2007.

Journal ref: Nature Physics Volume: 3 Issue: 8 Pages: 573-578 (2007)

Lithographic engineering of anisotropies in (Ga,Mn)As

Authors: S. Hümpfner, M. Sawicki, K. Pappert, J. Wenisch, K. Brunner, C. Gould, G. Schmidt, T. Dietl, L. W. Molenkamp

Abstract: The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on novel phenomena often associated with the anisotropy properties of these materials. This is driving a need for a method to locally control the anisotropy in order to allow the elaboration of devices. Here we present a method which provides patterning induced anisotropy which not… ▽ More The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on novel phenomena often associated with the anisotropy properties of these materials. This is driving a need for a method to locally control the anisotropy in order to allow the elaboration of devices. Here we present a method which provides patterning induced anisotropy which not only can be applied locally, but also dominates over the intrinsic material anisotropy at all temperatures. △ Less

Submitted 17 December, 2006; originally announced December 2006.

Journal ref: Appl. Phys. Lett. 90, 102102 (2007)

Transport Characterization of the Magnetic Anisotropy of (Ga,Mn)As

Authors: K. Pappert, S. Hümpfner, J. Wenisch, K. Brunner, C. Gould, G. Schmidt, L. W. Molenkamp

Abstract: The rich magnetic anisotropy of compressively strained (Ga,Mn)As has attracted great interest recently. Here we discuss a sensitive method to visualize and quantify the individual components of the magnetic anisotropy using transport. A set of high resolution transport measurements is compiled into color coded resistance polar plots, which constitute a fingerprint of the symmetry components of t… ▽ More The rich magnetic anisotropy of compressively strained (Ga,Mn)As has attracted great interest recently. Here we discuss a sensitive method to visualize and quantify the individual components of the magnetic anisotropy using transport. A set of high resolution transport measurements is compiled into color coded resistance polar plots, which constitute a fingerprint of the symmetry components of the anisotropy. As a demonstration of the sensitivity of the method, we show that these typically reveal the presence of both the [-110] and the [010] uniaxial magnetic anisotropy component in (Ga,Mn)As layers, even when most other techniques reveal only one of these components. △ Less

Submitted 6 November, 2006; originally announced November 2006.

Comments: The figures have been compressed to satisfy the site size limitations. Higher quality images can be obtained from the authors if needed

Journal ref: Appl. Phys. Lett 90, 062109 (2007)

Magnetization-Switched Metal-Insulator Transition in a (Ga,Mn)As Tunnel Device

Authors: K. Pappert, M. J. Schmidt, S. Hümpfner, C. Rüster, G. M. Schott, K. Brunner, C. Gould, G. Schmidt, L. W. Molenkamp

Abstract: We observe the occurrence of an Efros-Shklovskii gap in (Ga,Mn)As based tunnel junctions. The occurrence of the gap is controlled by the extent of the hole wave-function on the Mn acceptor atoms. Using k.p-type calculations we show that this extent depends crucially on the direction of the magnetization in the (Ga,Mn)As (which has two almost equivalent easy axes). This implies one can reversibly… ▽ More We observe the occurrence of an Efros-Shklovskii gap in (Ga,Mn)As based tunnel junctions. The occurrence of the gap is controlled by the extent of the hole wave-function on the Mn acceptor atoms. Using k.p-type calculations we show that this extent depends crucially on the direction of the magnetization in the (Ga,Mn)As (which has two almost equivalent easy axes). This implies one can reversibly tune the system into the insulating or metallic state by changing the magnetization. △ Less

Submitted 30 August, 2006; originally announced August 2006.

Journal ref: Phys. rev. Lett. 97, 186402 (2006)

Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices

Authors: C. Gould, K. Pappert, C. Rüster, R. Giraud*, T. Borzenko, G. M. Schott, K. Brunner, G. Schmidt, L. W. Molenkamp

Abstract: Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device geometries . Here we report on the simultaneous observation of both effects in a single nanodevice, which constitutes a significant step forward towards the eventual… ▽ More Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device geometries . Here we report on the simultaneous observation of both effects in a single nanodevice, which constitutes a significant step forward towards the eventual realization of spintronic devices which make use of domain walls to store, transport, and manipulate information. △ Less

Submitted 6 February, 2006; originally announced February 2006.

Journal ref: Jap. Journ. Appl. Phys. 45, issue 5A, 3860, (2006)

Anomalous in-plane magneto-optical anisotropy of self-assembled quantum dots

Authors: T. Kiessling, A. V. Platonov, G. V. Astakhov, T. Slobodskyy, S. Mahapatra, W. Ossau, G. Schmidt, K. Brunner, L. W. Molenkamp

Abstract: We report on a complex nontrivial behavior of the optical anisotropy of quantum dots that is induced by a magnetic field in the plane of the sample. We find that the optical axis either rotates in the opposite direction to that of the magnetic field or remains fixed to a given crystalline direction. A theoretical analysis based on the exciton pseudospin Hamiltonian unambiguously demonstrates tha… ▽ More We report on a complex nontrivial behavior of the optical anisotropy of quantum dots that is induced by a magnetic field in the plane of the sample. We find that the optical axis either rotates in the opposite direction to that of the magnetic field or remains fixed to a given crystalline direction. A theoretical analysis based on the exciton pseudospin Hamiltonian unambiguously demonstrates that these effects are induced by isotropic and anisotropic contributions to the heavy-hole Zeeman term, respectively. The latter is shown to be compensated by a built-in uniaxial anisotropy in a magnetic field B_c = 0.4 T, resulting in an optical response typical for symmetric quantum dots. △ Less

Submitted 12 January, 2006; originally announced January 2006.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 74, 041301(R) (2006)

Quantum-dot-based optical polarization conversion

Authors: G. V. Astakhov, T. Kiessling, A. V. Platonov, T. Slobodskyy, S. Mahapatra, W. Ossau, G. Schmidt, K. Brunner, L. W. Molenkamp

Abstract: We report circular-to-linear and linear-to-circular conversion of optical polarization by semiconductor quantum dots. The polarization conversion occurs under continuous wave excitation in absence of any magnetic field. The effect originates from quantum interference of linearly and circularly polarized photon states, induced by the natural anisotropic shape of the self assembled dots. The behav… ▽ More We report circular-to-linear and linear-to-circular conversion of optical polarization by semiconductor quantum dots. The polarization conversion occurs under continuous wave excitation in absence of any magnetic field. The effect originates from quantum interference of linearly and circularly polarized photon states, induced by the natural anisotropic shape of the self assembled dots. The behavior can be qualitatively explained in terms of a pseudospin formalism. △ Less

Submitted 7 September, 2005; v1 submitted 3 September, 2005; originally announced September 2005.

Comments: 5 pages, 3 figures; a reference added

Journal ref: Phys. Rev. Lett. 96, 027402 (2006)

1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack

Authors: C. Rüster, C. Gould, T. Jungwirth, J. Sinova, G. M. Schott, R. Giraud, K. Brunner, G. Schmidt, L. W. Molenkamp

Abstract: We report the discovery of a super-giant tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The effect arises from a strong dependence of the electronic structure of ferromagnetic semiconductors on the magnetization orientation rather than from a parallel or antiparallel alignment of the contacts. The key novel spintronics features of this effect… ▽ More We report the discovery of a super-giant tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The effect arises from a strong dependence of the electronic structure of ferromagnetic semiconductors on the magnetization orientation rather than from a parallel or antiparallel alignment of the contacts. The key novel spintronics features of this effect are: (i) both normal and inverted spin-valve like signals; (ii) a large non-hysteretic magnetoresistance for magnetic fields perpendicular to the interfaces; (iii) magnetization orientations for extremal resistance are, in general, not aligned with the magnetic easy and hard axis. (iv) Enormous amplification of the effect at low bias and temperatures. △ Less

Submitted 25 August, 2004; originally announced August 2004.

Journal ref: Phys. rev. Lett. 94, 027203, (2005)

Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer

Authors: C. Gould, C. Rüster, T. Jungwirth, E. Girgis, G. M. Schott, R. Giraud, K. Brunner, G. Schmidt, L. W. Molenkamp

Abstract: We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal/insulator/ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the a… ▽ More We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal/insulator/ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction, and the two-step magnetization reversal process in this material. △ Less

Submitted 28 July, 2004; originally announced July 2004.

Comments: 4 pages, 4 figures, submitted to PRL

Journal ref: Phys. Rev. Lett. 93, 117203, (2004)

Remote-do** scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well

Authors: V. T. Dolgopolov, E. V. Deviatov, A. A. Shashkin, U. Wieser, U. Kunze, G. Abstreiter, K. Brunner

Abstract: The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote do** that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-do** scattering allow us to arrive at a conclusion that the Hubbard form… ▽ More The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote do** that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-do** scattering allow us to arrive at a conclusion that the Hubbard form underestimates the local field corrections by about a factor of 2. △ Less

Submitted 6 October, 2003; originally announced October 2003.

Journal ref: Superlattices Microstruct. 33, 271 (2003)