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Spin- and angle-resolved photoemission studies of the electronic structure of Si(110)"16x2" surfaces
Authors:
N. K. Lewis,
Y. Lassailly,
L. Martinelli,
I. Vobornik,
J. Fujii,
C. Bigi,
E. Brunkow,
N. B. Clayburn,
T. J. Gay,
W. R. Flavell,
E. A. Seddon
Abstract:
The electronic structure of Si(110)"16 x 2" double-domain, single-domain and 1 x 1 surfaces have been investigated using spin- and angle-resolved photoemission at sample temperatures of 77 K and 300 K. Angle-resolved photoemission was conducted using horizontally- and vertically-polarised 60 eV and 80 eV photons. Band-dispersion maps revealed four surface states ($S_1$ to $S_4$) which were assigne…
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The electronic structure of Si(110)"16 x 2" double-domain, single-domain and 1 x 1 surfaces have been investigated using spin- and angle-resolved photoemission at sample temperatures of 77 K and 300 K. Angle-resolved photoemission was conducted using horizontally- and vertically-polarised 60 eV and 80 eV photons. Band-dispersion maps revealed four surface states ($S_1$ to $S_4$) which were assigned to silicon dangling bonds on the basis of measured binding energies and photoemission intensity changes between horizontal and vertical light polarisations. Three surface states ($S_1$, $S_2$ and $S_4$), observed in the Si(110)"16 x 2" reconstruction, were assigned to Si adatoms and Si atoms present at the edges of the corrugated terrace structure. Only one of the four surface states, $S_3$, was observed in both the Si(110)"16 x 2" and 1 x 1 band maps and consequently attributed to the pervasive Si zigzag chains that are components of both the Si(110)"16 x 2" and 1 x 1 surfaces. A state in the bulk-band region was attributed to an in-plane bond. All data were consistent with the adatom-buckling model of the Si(110)"16 x 2" surface. Whilst room temperature measurements of $P_y$ and $P_z$ were statistically compatible with zero, $P_x$ measurements of the enantiomorphic A-type and B-type Si(110)"16 x 2" surfaces gave small average polarisations of around 1.5\% that were opposite in sign. Further measurements at 77 K on A-type Si(110)"16 x 2" surface gave a smaller value of +0.3\%. An upper limit of $\sim1\%$ may thus be taken for the longitudinal polarisation.
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Submitted 8 August, 2019; v1 submitted 18 March, 2019;
originally announced March 2019.
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Femtosecond-Laser-Induced Spin-Polarized Electron Emission from a GaAs Tip
Authors:
Evan Brunkow,
Eric R. Jones,
Herman Batelaan,
T. J. Gay
Abstract:
It is shown that focusing circularly-polarized 800 nm light pulses of 100 fs duration on the tips of p-GaAs crystalline shards having no negative electron affinity (NEA) activation results in electron emission that is both fast and spin-polarized. The 400 fs duration of the emission process was determined by pump/probe measurements. The three samples we investigated produced electron polarizations…
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It is shown that focusing circularly-polarized 800 nm light pulses of 100 fs duration on the tips of p-GaAs crystalline shards having no negative electron affinity (NEA) activation results in electron emission that is both fast and spin-polarized. The 400 fs duration of the emission process was determined by pump/probe measurements. The three samples we investigated produced electron polarizations of 13.1(9)%, 13.3(7)%, and 10.4(2)%. Emission currents ranged between 50 pA and 3 nA with a sample bias of -100V and average laser power of 100 mW. The electron emission exhibited linear dichroism and was obtained under moderate vacuum conditions, similar to that of metallic tips. This source of spin-polarized electron pulses is "fast" in the sense that the electron emission process is of comparable duration to the laser pulses that initiate it.
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Submitted 7 January, 2019;
originally announced January 2019.
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Domain formation mechanism of the Si(110)"16 x 2" reconstruction
Authors:
N. K. Lewis,
N. B. Clayburn,
E. Brunkow,
T. J. Gay,
Y. Lassailly,
J. Fujii,
I. Vobornik,
W. R. Flavell,
E. A. Seddon
Abstract:
The main factor that determines which of the two domains form upon reconstruction of the Si(110)"16 x 2" surface has been investigated. LEED and STM images showed that the domain orientation was independent of the heating current direction used to induce the Si(110)"16 x 2" reconstruction. Reciprocal-space lattice models of the reconstruction allowed for the correct identification of the domain or…
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The main factor that determines which of the two domains form upon reconstruction of the Si(110)"16 x 2" surface has been investigated. LEED and STM images showed that the domain orientation was independent of the heating current direction used to induce the Si(110)"16 x 2" reconstruction. Reciprocal-space lattice models of the reconstruction allowed for the correct identification of the domain orientations in the LEED images and confirm that the reconstruction is 2D-chiral. It is proposed that the domain orientation upon surface reconstruction is determined by the direction of monoatomic steps present on the Si(110) plane. This is in turn determined by the direction at which the surface is polished off-axis from the (110) plane.
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Submitted 12 June, 2018;
originally announced June 2018.
